JPH09321034A - Thin film forming apparatus and semiconductor device manufacturing method using the same - Google Patents

Abstract

(57) Abstract: A thin film forming apparatus such as an atmospheric pressure CVD apparatus capable of enhancing the peeling-off effect of a thin film attached to a susceptor, and a method of manufacturing a semiconductor device using the same. A surface of a susceptor 3 installed inside a reaction chamber is composed of a central mirror surface portion 3a and a blasting portion 3b arranged on the outer periphery of the mirror surface portion 3a. The interface 3c with the blast processing section 3b is formed in a region covered by the wafer 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming apparatus and a method of manufacturing a semiconductor device using the thin film forming apparatus, and in particular, a BPSG (Boro Phospho Silicate Glass) film or the like is formed on a wafer surface by a CVD (Chemical Vapor Deposition) method. The present invention relates to a thin film forming apparatus effective when applied to a CVD apparatus for forming a thin film and a method for manufacturing a semiconductor device such as a semiconductor integrated circuit device using the thin film forming apparatus.

[0002]

2. Description of the Related Art The present inventor has studied a CVD apparatus used in a semiconductor integrated circuit device manufacturing technique. The following is the technique examined by the present inventor, and the outline thereof is as follows.

That is, in a manufacturing process of a semiconductor integrated circuit device, a BPSG film and a PSG film are formed by using a CVD device.
A thin film such as a (Phospho Silicate Glass) film or a silicon oxide film is formed.

[0004] In this case, for example, an atmospheric pressure CVD apparatus supplies one or several kinds of gases composed of elements constituting a thin film material to a reaction chamber, and forms a thin film on a surface of a wafer composed of, for example, a semiconductor substrate by a chemical reaction. doing. Further, a susceptor is provided in the reaction chamber, and the wafer is fixed to the surface of the susceptor by a vacuum suction method.

The surface of the susceptor has a mirror portion having a diameter larger than the diameter of the wafer and a blast processing portion disposed on the outer periphery thereof (the surface of the susceptor is blasted to form fine irregularities on the surface of the susceptor). And a region which enhances the adhesiveness of the thin film in this region). Therefore, since the wafer can be planarly fixed to the surface of the susceptor by the mirror surface portion, it is possible to reduce variations in the film thickness of, for example, the BPSG film deposited on the surface of the wafer. Further, the blasting section can reduce the peeling of, for example, the BPSG film deposited on the surface of the susceptor.

[0006] As a document describing the CVD apparatus, for example, "Electronic Materials December 1988 Separate Volume" p.36 published by the Industrial Research Committee on December 13, 1988.
To p42.

[0007]

However, when forming a BPSG film, for example, by using the above-described atmospheric pressure CVD apparatus, the BPSG film which is a silicon oxide film containing boron (B) and phosphorus (P) is contained in the BPSG film. There is a problem that film peeling from the susceptor occurs due to a difference in film quality due to variations in boron concentration and phosphorus concentration.

In particular, there is a problem that film peeling from the susceptor frequently occurs on the interface between the mirror surface portion of the susceptor and the blasting portion.

Therefore, since the film peeling from the susceptor frequently occurs, many foreign matters due to the film peeling adhere to the wafer and are deposited on the surface of the wafer to deteriorate the film quality of the BPSG film, which may cause a semiconductor integrated circuit device or the like. There is a problem that the yield of the product is reduced. In addition, since film peeling from the susceptor frequently occurs, it is necessary to remove the susceptor from the reaction chamber, perform cleaning and drying in order to remove the reaction by-product adhering to the susceptor, and the frequency of maintenance also increases. Therefore, the labor and working time for that are required, and the operating rate of the atmospheric pressure CVD apparatus is decreasing.

An object of the present invention is to provide a thin film forming apparatus such as an atmospheric pressure CVD apparatus capable of enhancing the prevention of peeling of a thin film attached to a susceptor, and a semiconductor device manufacturing method using the same.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0012]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, in the thin film forming apparatus of the present invention, the surface of the susceptor installed in the reaction chamber has a mirror surface portion in the central portion and a fine unevenness forming portion such as a blasting portion disposed on the outer periphery of the mirror surface portion. The interface between the mirror surface portion and the fine concavo-convex forming portion is formed in a region covered by the wafer.

Further, in the method of manufacturing a semiconductor device using the thin film forming apparatus of the present invention, the thin film forming apparatus is such that the interface between the mirror surface portion of the susceptor and the fine concavo-convex forming portion such as the blast processing portion is covered with a wafer. A step of fixing a wafer to a susceptor and forming a thin film on the wafer by using the above method, and forming a thin film such as a BPSG film on the wafer for forming a semiconductor integrated circuit device or the like. Is.

[0015]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments, components having the same function are denoted by the same reference numerals, and redundant description will be omitted.

(Embodiment 1) FIG. 1 is a schematic view showing a partially broken CVD apparatus according to an embodiment of the present invention. FIG. 2 is an enlarged plan view showing the wafer and the susceptor to which the wafer is fixed in FIG. 1 in an enlarged manner. FIG. 3 is a cross-sectional view taken along the line AA in FIG.

As shown in FIGS. 1 to 3, the CVD apparatus according to the present embodiment is an atmospheric pressure CVD apparatus, and a susceptor 3 for fixing a wafer 2 is installed inside a reaction chamber 1.

The reaction chamber 1 is fixed on a substrate 4 of the apparatus via a flange 5 in a hermetically sealed state. A gas pipe 7 for supplying a reaction gas 6 to the reaction chamber 1 is installed on the base body 4, a gas introducing portion 8 is connected to the gas pipe 7, and a gas source is connected to the gas introducing portion 8. Gas pipe 9
Are connected to each other. Further, a gas pipe 11 that connects the exhaust gas from the reaction chamber 1 to the exhaust gas processing mechanism 10 is connected to the substrate 4. Further, a dispersion head 12 is installed on the substrate 4, and foreign matter generated inside the reaction chamber 1 is stopped on the surface of the dispersion head 12 to supply the reaction gas 6 to the gas pipe 7. Also, foreign matter is prevented from being added to the gas pipe 11 in which the exhaust gas is absorbed.

A vacuum adsorption mechanism 13 provided on the reaction chamber 1 is connected to the susceptor 3 with a gas pipe 14 interposed therebetween. The vacuum adsorption mechanism 13 is used to fix the wafer 2 to the susceptor 3. Alternatively, the wafer 2 can be removed from the susceptor 3. The susceptor 3 and the vacuum suction mechanism 13 connected to the susceptor 3 can move in the front-rear direction 15 with respect to the reaction gas 6 so that the surface of the wafer 2 is uniformly supplied with the reaction gas 6. Further, a heating mechanism 16 such as a resistance heater for heating the wafer 2 fixed to the susceptor 3 is installed on the susceptor 3.

The susceptor 3 of the present embodiment has a circular planar shape, and the surface on the side on which the wafer 2 is fixed has a mirror surface portion 3a having a diameter C smaller than the diameter B of the wafer 2.
And a blast processing section 3b arranged on the outer periphery thereof. The blast processing section 3b is an area in which the surface of the susceptor 3 is blast-processed to form fine irregularities on the surface of the susceptor 3 to enhance the adhesiveness of the thin film in this area. Interface 3 with 3a
c is formed in a region covered by the wafer 2. Specifically, when the diameter B of the wafer 2 is 125 mm, for example, the diameter C of the mirror surface portion 3a is 1
The mirror surface portion 3a has a diameter C of 15 mm and is smaller than the diameter B of the wafer 2.

The operation of the CVD apparatus of this embodiment is as follows.

That is, after the wafer 2 for manufacturing, for example, a semiconductor integrated circuit device is fixed to the susceptor 3 installed inside the reaction chamber 1 by using the vacuum suction mechanism 13, the reaction chamber 1 is set on the substrate 4. Is fixed in a hermetically sealed state via the flange 5. Next, after replacing air or the like existing in the reaction chamber 1 with nitrogen gas or the like, the wafer 2 is heated to a predetermined temperature by the heating mechanism 16,
The reaction gas 6 is supplied from the gas introduction unit 8 into the reaction chamber 1 through the gas pipe 7. In this state, while moving the wafer 2 in the front-back direction 15, a thin film such as a BPSG film having a predetermined film quality is deposited on the surface of the wafer 2 with a predetermined film thickness. In this case, the exhaust gas after the chemical reaction is absorbed by the exhaust gas processing mechanism 10 through the gas pipe 11.

According to the CVD apparatus of this embodiment, the surface of the susceptor 3 is composed of the central mirror surface portion 3a and the blast processing portion 3b arranged on the outer periphery of the mirror surface portion 3a. Since the interface 3c with the blast processing section 3b is formed in the area covered with the wafer 2, the wafer 2 can be planarly fixed to the surface of the susceptor 3 by the mirror surface section 3a, and thus deposited on the surface of the wafer 2. For example, it is possible to reduce the variation in the thickness of a thin film such as a BPSG film. Further, the blasting section 3b can reduce peeling of a thin film such as a BPSG film deposited on the surface of the susceptor 3.

According to the CVD apparatus of this embodiment, the surface of the susceptor 3 is composed of the central mirror surface portion 3a and the blast processing portion 3b arranged on the outer periphery of the mirror surface portion 3a. Since the interface 3c with the blast processing portion 3b is formed in the area covered by the wafer 2, the area where film peeling from the susceptor 3 frequently occurs, that is, the mirror surface portion 3a of the susceptor 3 and the blast processing portion 3 are formed.
Since the interface 3c with b is covered with the wafer 2,
The prevention of film peeling from the susceptor 3 can be improved.

Therefore, since it is possible to improve the prevention of film peeling from the susceptor 3, it is possible to prevent a lot of foreign matters due to film peeling from adhering to the wafer 2 and accumulating on the surface of the wafer 2. As a result, the yield of products such as semiconductor integrated circuit devices can be improved. Further, since it is possible to improve the prevention of film peeling from the susceptor 3, it is necessary to remove the susceptor 3 from the reaction chamber 1 and perform cleaning and drying in order to remove the reaction by-product attached to the susceptor 3. Since the frequency of maintenance can be reduced, the labor and working time therefor can be reduced, and the operating rate of the CVD apparatus can be improved.

In the CVD apparatus of this embodiment, the surface of the susceptor 3 is composed of a central mirror surface portion 3a and a blast processing portion 3b arranged on the outer periphery of the mirror surface portion 3a. The interface 3c with the blast processing section 3b is formed in a region covered by the wafer 2. The blast processing section 3b has a mode of a fine unevenness forming section having fine unevenness formed by a selective etching method or the like. can do.

Further, according to the CVD apparatus of this embodiment, since a thin film can be formed by the CVD method, BPSG
PS, which is a silicon oxide film containing phosphorus in addition to the film
An insulating film such as a G film, a silicon oxide film, or a silicon nitride film or a conductive film such as tungsten can be formed.

Further, according to the CVD apparatus of the present embodiment, the surface of the susceptor 3 has the central mirror surface portion 3a and the mirror surface portion 3a.
and a blast processing section 3b arranged on the outer periphery of a, and an interface 3 between the mirror surface section 3a and the blast processing section 3b.
Since c is formed in a region covered by the wafer 2, and various other structures can be adopted, the inside of the reaction chamber 1 is depressurized in addition to the atmospheric pressure CVD apparatus. It can be applied to various CVD apparatuses such as a low pressure CVD apparatus or a plasma CVD apparatus that forms a thin film by plasma discharge decomposition of a reaction gas under reduced pressure.

(Embodiment 2) FIGS. 4 to 9 are schematic cross-sectional views showing a manufacturing process of a semiconductor integrated circuit device using a CVD apparatus according to another embodiment of the present invention. The method for manufacturing the semiconductor integrated circuit device according to the present embodiment will be described with reference to FIG.

First, a field insulating film 19 made of a silicon oxide film is formed in a device isolation region which is a selective region on the surface of a semiconductor substrate 18 made of, for example, p-type silicon single crystal by using a thermal oxidation process. Although not shown, a channel stopper film for preventing inversion is formed under the field insulating film 19 (FIG. 4).

Next, a gate insulating film 20 made of silicon oxide is formed in the active region surrounded by the field insulating film 19.
And the gate electrode 21 made of polycrystalline silicon is formed on the gate insulating film 20 according to the CV of the first embodiment.
D device is used. The gate electrode 21 is formed by sequentially depositing an insulating film 22 made of a polycrystalline silicon film and a silicon oxide film on the semiconductor substrate 18 and sequentially etching these. After that, a sidewall insulating film 23 made of a silicon oxide film is formed on the sidewall of the gate electrode 21. Next, an n-type impurity such as phosphorus is ion-implanted into the semiconductor substrate 18 to form an n-type semiconductor region 24 to be a source and a drain (FIG. 5).

After that, an insulating film 25 made of a silicon oxide film or the like is formed on the semiconductor substrate 18 by using the above-described CVD apparatus of the first embodiment, and then contact holes are formed in the selective regions. A contact electrode 26 is formed in that region (FIG. 6).

Next, after the insulating film 27 made of a BPSG film or the like is formed on the semiconductor substrate 18 by using the above-described CVD apparatus of the first embodiment, through holes are formed in the selective regions ( (Fig. 7).

In the manufacturing process of the semiconductor integrated circuit device described above, the n-channel MOSFET is formed on the semiconductor substrate 18, but the n-channel MOSF is formed on the semiconductor substrate 18.
An embodiment in which various semiconductor elements such as a p-channel MOSFET, a bipolar transistor, and a capacitor other than ET are formed can be adopted.

Next, a barrier metal film 28 made of titanium is formed on the semiconductor substrate 18 by a sputtering method, and then a metal film 29 made of aluminum is formed on the surface of the barrier metal film 28 by a sputtering method. Form. Thereafter, a barrier metal film 30 made of titanium is formed on the metal film 29 by using a sputtering method. In this case, the barrier metal film 28 and the barrier metal film 30
May be in the form of a refractory metal film using an alloy such as titanium, tungsten, molybdenum or TiW. Further, the metal film 29 can be in the form of a metal film using copper or gold (FIG. 8).

After that, by using the photolithography technique and the selective etching technique, unnecessary portions of the barrier metal film 28 / metal film 29 / barrier metal film 30 as a wiring layer are removed to form a wiring pattern (FIG. 9). Next, after a multilayer wiring layer is formed as necessary, a passivation film (not shown) is formed, thereby completing the manufacturing process of the semiconductor integrated circuit device.

According to the method of manufacturing the semiconductor integrated circuit device of the present embodiment, the polycrystalline silicon film as the gate electrode 21 and the silicon oxide film as the insulating film 25 are formed by using the CVD apparatus of the first embodiment described above. By forming the BPSG film as the insulating film 27, film peeling from the susceptor 3 and generation of foreign matters such as reaction by-products can be suppressed in the manufacturing process thereof, so that a high-performance thin film such as the gate electrode 21 is formed. And the manufacturing yield of the semiconductor integrated circuit device can be improved.

In the method for manufacturing the semiconductor integrated circuit device according to the present embodiment described above, the gate electrode 21, the insulating film 25 and the insulating film 27 in the semiconductor integrated circuit device are formed using the CVD device according to the first embodiment. It is a mode that
The CVD apparatus according to the first embodiment described above can be used for the technique of manufacturing a conductive film such as a polycrystalline silicon film and an insulating film such as a silicon oxide film in a single semiconductor device including a field effect transistor or a bipolar transistor. .

Although the invention made by the inventor has been specifically described based on the embodiments of the present invention, the present invention is not limited to the above embodiments, and various modifications may be made without departing from the gist of the invention. Needless to say, it can be changed.

For example, as a thin film forming apparatus of the present invention and a semiconductor device manufacturing method using the same, a thin film such as a single crystal silicon film can be formed by using an epitaxial growth method in addition to the CVD apparatus of the present embodiment. It can be applied to a thin film forming apparatus such as an epitaxial growth apparatus to be formed and a method of manufacturing a semiconductor device such as a semiconductor integrated circuit device using the thin film forming apparatus.

[0041]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). According to the thin film forming apparatus of the present invention,
The surface of the susceptor is composed of a mirror surface portion in the central portion and a fine ruggedness forming portion such as a blasting portion arranged on the outer periphery of the mirror surface portion, and the interface between the mirror surface portion and the fine ruggedness forming portion is covered with a wafer. Since it is formed in the region, the wafer can be planarly fixed to the surface of the susceptor by the mirror surface portion, so that, for example, BPS deposited on the surface of the wafer
It is possible to reduce variations in film thickness of thin films such as G films. Further, peeling of a thin film such as a BPSG film deposited on the surface of the susceptor can be reduced by the fine concavo-convex forming portion such as the blasting portion.

(2). According to the thin film forming apparatus of the present invention,
The surface of the susceptor is composed of a central mirror surface portion and a fine ruggedness forming portion such as a blasting portion arranged on the outer periphery of the mirror surface portion, and the interface between the mirror surface portion and the fine ruggedness forming portion is covered with a wafer. Since the film is formed in the area, the area where the film peeling from the susceptor frequently occurs, that is, the interface between the mirror surface portion of the susceptor and the fine unevenness forming portion is covered with the wafer, so that the film peeling effect from the susceptor is prevented. Can be increased.

Therefore, by preventing the film peeling from the susceptor, it is possible to prevent a lot of foreign matters due to the film peeling from adhering to the wafer and accumulating on the surface of the wafer. As a result, the yield of products such as semiconductor integrated circuit devices can be improved. Also, by being able to improve the prevention of film peeling from the susceptor,
In order to remove the reaction by-products adhering to the susceptor, it is necessary to remove the susceptor from the reaction chamber and perform cleaning and drying, but since the maintenance frequency can be reduced, the labor and work time for that can also be reduced, The operating rate of can be improved.

(3). According to the method of manufacturing a semiconductor device of the present invention, the thin film forming apparatus described above is used to form a thin film such as a polycrystalline silicon film as a gate electrode and a silicon oxide film as an insulating film. Since film peeling from the susceptor and generation of foreign matters such as reaction by-products in the process can be suppressed, a thin film such as a high-performance gate electrode can be formed and the manufacturing yield of the semiconductor integrated circuit device can be improved.

[Brief description of drawings]

FIG. 1 is a schematic view showing a partially broken view of a CVD apparatus according to an embodiment of the present invention.

FIG. 2 is an enlarged plan view showing a wafer and a susceptor to which the wafer is fixed in FIG. 1 in an enlarged manner.

3 is a cross-sectional view taken along the line AA in FIG.

FIG. 4 is a schematic cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device using a CVD device according to another embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device using a CVD device according to another embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device using a CVD device which is another embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device using a CVD device which is another embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device using a CVD device according to another embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device using a CVD device according to another embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Reaction chamber 2 Wafer 3 Susceptor 3a Mirror surface part 3b Blast processing part 3c Interface 4 Substrate 5 Flange 6 Reaction gas 7 Gas pipe 8 Gas introduction part 9 Gas pipe 10 Exhaust gas treatment mechanism 11 Gas pipe 12 Dispersion head 13 Vacuum adsorption mechanism 14 Gas pipe 15 Front-rear direction 16 Heating mechanism 18 Semiconductor substrate 19 Field insulating film 20 Gate insulating film 21 Gate electrode 22 Insulating film 23 Sidewall insulating film 24 Semiconductor region 25 Insulating film 26 Contact electrode 27 Insulating film 28 Barrier metal film 29 Metal film 30 Barrier metal film B diameter C diameter

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁶ Identification code Office reference number FI technical display location // C30B 29/06 504 C30B 29/06 504L

Claims (7)

[Claims] 1. A thin film forming apparatus for forming a thin film on a wafer fixed to a susceptor, wherein a surface of the susceptor comprises a mirror surface portion at a central portion and a fine concavo-convex portion formed on an outer periphery of the mirror surface portion. The thin film forming apparatus is characterized in that an interface between the mirror surface portion and the fine concavo-convex forming portion is formed in a region covered by the wafer. 2. The thin film forming apparatus according to claim 1, wherein
The thin film forming apparatus is characterized in that the diameter of the mirror surface portion is smaller than the diameter of the wafer. 3. The thin film forming apparatus according to claim 1, wherein the fine concavo-convex forming section is a blasting section. 4. The thin film forming apparatus according to claim 1, wherein the thin film forming apparatus is a CVD apparatus. 5. A method of manufacturing a semiconductor device, comprising the step of forming a thin film on a wafer by using the thin film forming apparatus according to claim 1. 6. The method of manufacturing a semiconductor device according to claim 5, wherein the thin film forming device is a CVD device, and the wafer is a wafer for forming a semiconductor integrated circuit device. Production method. 7. The method for manufacturing a semiconductor device according to claim 5, wherein the thin film forming device is a CVD device, the wafer is a wafer for forming a semiconductor device, and the thin film formed on the wafer is A method for manufacturing a semiconductor device, which is an insulating film or a conductive film.