JPH09330868A - Electron beam exposure method and device manufacturing method using the same - Google Patents

Abstract

(57) Abstract: A multi-electron beam type electron beam exposure method is provided which reduces the reduction in throughput even if the pattern size to be exposed is miniaturized. SOLUTION: A first region on a deflection array, which comprises positions on the deflection array when at least one of a plurality of electron beams exposes a contour portion in a pattern to be exposed, is determined, and the first region is determined. A second region on the array, which is a region different from that of the plurality of electron beams, the second region on the array comprising a position on the array when exposing a portion different from the contour portion in the pattern to be exposed. In the first region, the plurality of electron beams are deflected to settle their positions by using the arrangement interval of the arrangement as a unit of deflection amount, and in the second area, the arrangement distance is larger than the arrangement interval of the arrangement. The positions of the plurality of electron beams are settled by setting the deflection amount as a unit.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam exposure method, and more particularly to an electron beam exposure method for performing pattern writing using a plurality of electron beams for wafer direct writing or mask / reticle exposure, and a device using the same. It relates to a manufacturing method.

[0002]

2. Description of the Related Art An electron beam exposure apparatus includes a point beam type in which a beam is used in the form of a spot, a variable rectangular beam type in which a variable-size rectangular section is used, and a stencil mask having a desired sectional shape using a stencil. There are devices such as molds.

[0003] Point beam electron beam exposure apparatuses are used only for research and development because of their low throughput. The variable rectangular beam type electron beam exposure apparatus has a throughput of one to two orders of magnitude higher than that of the point type electron beam exposure apparatus. However, when exposing a pattern in which a fine pattern of about 0.1 μm is packed with a high degree of integration, the throughput is still high. There are many problems. On the other hand, the stencil mask type electron beam exposure apparatus uses a stencil mask in which a plurality of repeated pattern transmission holes are formed in a portion corresponding to a variable rectangular aperture. Therefore, the stencil mask type electron beam exposure apparatus has a great advantage in exposing a repetitive pattern. However, for a semiconductor circuit that requires a large number of transfer patterns that cannot be accommodated in one stencil mask, a plurality of stencil masks can be used. It is necessary to take out the masks one by one and use them, and it takes time to replace the mask, resulting in a problem that the throughput is remarkably reduced.

As an apparatus for solving this problem, a sample surface is irradiated with a plurality of electron beams along design coordinates, and the sample surface is scanned by deflecting the plurality of electron beams along design coordinates. In addition, there is a multi-electron beam type exposure apparatus which draws a pattern by individually turning on / off a plurality of electron beams according to a pattern to be drawn. The multi-electron beam type exposure apparatus has a feature that throughput can be improved because an arbitrary drawing pattern can be drawn without using a stencil mask.

FIG. 18 shows an outline of a multi-electron beam type exposure apparatus. 501a, 501b, 501c individually emit electron beams
An electron gun that can be turned on / off. 502 is an electron gun 501a, 501
A reduction electron optical system for reducing and projecting a plurality of electron beams from b and 501c onto a wafer 503, and a reference numeral 504 is a deflector for deflecting the plurality of electron beams reduced and projected onto the wafer 503.

A plurality of electron beams from the electron guns 501a, 501b, and 501c are given the same amount of deflection by a deflector 504. As a result, each electron beam moves with its position on the wafer being sequentially set in accordance with the arrangement determined by the deflector 504 with reference to each beam reference position. Then, the respective electron beams expose the patterns to be exposed in different exposure areas.

18A, 18B, and 18C are electron guns 501a, respectively.
, 501b, 501c expose the patterns to be exposed in accordance with the same arrangement in the respective exposure areas. The position of each electron beam on the array at the same time is (1,1), (1,2) .... (1,16), (2,1), (2,2) .... ( 2,16),
The position is settled and moved to become (3,1) .. At the same time, the beam is irradiated at the position where the pattern (P1, P2, P3) to be exposed exists, The pattern (P1, P2, P3) to be exposed is exposed (so-called raster scan).

[0008]

However, in the multi-electron beam type exposure apparatus using the raster scan, when the size of the pattern to be exposed becomes fine, the exposure area of each electron beam is divided into finer positions. Is set and the electron beam is emitted. (The array spacing of the array defined by the deflector 504 becomes narrower.) As a result, when exposing the exposure area of the same area, the number of exposures by adjusting the position of the electron beam increases, and the throughput significantly decreases. is there.

[0009]

The present invention has been made in view of the above-mentioned conventional problems, and an embodiment of the electron beam exposure method of the present invention is to provide a plurality of electron beams at different positions on the substrate surface. And deflecting by a common deflector, the positions of the plurality of electron beams are sequentially set in accordance with the same arrangement defined by the deflector, and the irradiation of each of the plurality of electron beams is individually controlled. In an electron beam exposure method for exposing a substrate,
Determining a first region on the array that comprises the position on the array when exposing a contour in a pattern to be exposed by at least one of the plurality of electron beams; Is a different region and determines a second region on the array, which is composed of positions on the array when at least one of the plurality of electron beams exposes a portion different from the contour portion in the pattern to be exposed. And the first step
In the area, the step of deflecting the plurality of electron beams by using the arrangement interval of the arrangement as a unit of the deflection amount to settle their positions, and in the second area, the deflection amount larger than the arrangement distance of the arrangement is used as a unit. The method further includes deflecting the plurality of electron beams to settle their positions.

In a region on the array different from the first and second regions, there is a step of deflecting the positions of the plurality of electron beams without settling.

Making the size of the electron beam deflected in the second region on the substrate surface larger than the size of the electron beam deflected in the first deflection region on the substrate surface. It is characterized by having.

The method further comprises the step of determining the arrangement interval of the arrangement based on the minimum line width of the pattern to be exposed on the wafer, the type of line width, and the shape.

According to one embodiment of the electron beam exposure apparatus of the present invention, an irradiation unit for making a plurality of electron beams incident on different positions on a substrate surface and a same array by giving the same deflection amount to the plurality of electron beams. In the electron beam exposure apparatus for exposing the substrate, the electron beam exposure apparatus comprises: a deflecting unit that sequentially sets the positions of the plurality of electron beams according to the above; and a blanking unit that individually controls irradiation of each of the plurality of electron beams. In the first region on the array, which is formed by the position on the array when at least one of the plurality of electron beams exposes the contour portion in the pattern to be exposed, the array interval of the array is used as a unit of the deflection amount. At least one of the plurality of electron beams in a region different from the first region is deflected and settled by the deflecting unit. In the second area on the array, which is formed by the position on the array when a portion different from the contour portion in the pattern to be exposed is exposed, the plurality of units are arranged in units of a deflection amount larger than the array interval of the array. It is characterized by having a control means for deflecting and stabilizing the electron beam.

It is characterized in that the control means does not settle the positions of the plurality of electron beams by the deflection means in a region on the array different from the first and second deflection regions.

There is a changing means for changing the size of the plurality of electron beams on the substrate surface, and the control means is for changing the size of the electron beams in the second deflection area on the substrate surface. Is larger than the size of the electron beam in the first deflection region on the substrate surface.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION

[Explanation of components of electron beam exposure apparatus] FIG. 1 is a schematic view of a main part of an electron beam exposure apparatus according to the present invention.

In FIG. 1, reference numeral 1 denotes an electron gun including a cathode 1a, a grid 1b, and an anode 1c.
Electrons emitted from 1a form a crossover image between grid 1b and anode 1c. (Hereinafter, these crossover images will be referred to as light sources.) The electrons emitted from this light source become a substantially parallel electron beam by the condenser lens 2 whose front focal position is at the light source position. The substantially parallel electron beam enters the element electron optical system array 3. Element electron optical system array 3
A plurality of element electron optical systems each including a blanking electrode, an opening, and an electron lens are arranged in a direction orthogonal to the optical axis AX. Details of the element electron optical system array 3 will be described later.

The element electron optical system array 3 forms a plurality of intermediate images of the light source, and each intermediate image is reduced and projected by a reduction electron optical system 4 described later to form a light source image on a wafer 5.

At this time, each element of the element electron optical system array 3 is set such that the interval between the light source images on the wafer 5 is an integral multiple of the size of the light source image. Further, the elementary electron optical system array 3 makes the position of each intermediate image in the optical axis direction different according to the field curvature of the reduction electron optical system 4, and reduces each intermediate image to the wafer 5 by the reduction electron optical system 4. The aberration that occurs when the image is projected is corrected in advance.

The reduction electron optical system 4 includes a first projection lens 41 (4
3) and the second projection lens 42 (44). Let the focal length of the first projection lens 41 (43) be f
1. Assuming that the focal length of the second projection lens 42 (44) is f2, the distance between these two lenses is f1 + f2. AX on optical axis
Is located at the focal position of the first projection lens 41 (43), and its image point is focused on the second projection lens 42 (44). This image is -f
Reduced to 2 / f1. In addition, since the two lens magnetic fields are determined so as to act in opposite directions, theoretically, there are five spherical aberrations, isotropic astigmatism, isotropic coma, field curvature aberration, and axial chromatic aberration. Except for aberrations, other Seidel aberrations and chromatic aberrations related to rotation and magnification are canceled.

6 deflects a plurality of electron beams from the elementary electron optical system array 3 to form a plurality of light source images on the wafer 5.
This is a deflector that displaces in the X and Y directions by substantially the same amount of displacement. Although not shown, the deflector 6 is composed of a main deflector used when the deflection width is wide and a sub deflector used when the deflection width is narrow.The main deflector is an electromagnetic deflector. The sub deflector is an electrostatic deflector.

Reference numeral 7 is a dynamic focus coil that corrects the deviation of the focus position of the light source image due to deflection aberration generated when the deflector 6 is operated, and reference numeral 8 is generated by deflection, like the dynamic focus coil 7. It is a dynamic stig coil that corrects astigmatism of deflection aberration.

Reference numeral 9 detects reflected electrons or secondary electrons generated when the electron beam from the element electron optical system array 3 irradiates the alignment mark formed on the wafer 5 or the mark on the stage reference plate 13. This is a backscattered electron detector.

Reference numeral 10 is a Faraday cup having two single knife edges extending in the X and Y directions, and detects the charge amount of the light source image formed by the electron beam from the element electron optical system.

Reference numeral 11 denotes a θ-Z stage on which a wafer is placed and which can be moved in the optical axis AX (Z-axis) direction and the rotation direction around the Z-axis, and includes the stage reference plate 13 and the Faraday cup described above.
10 are fixed.

12 is a case where the θ-Z stage is mounted and the optical axis AX (Z
(XY axis) that is movable in the XY directions orthogonal to the axis.

Next, the element electron optical system array will be described with reference to FIG.
3 will be described.

In the element electron optical system array 3, a plurality of element electron optical systems are grouped (subarray), and a plurality of subarrays are formed. In this embodiment, seven sub-arrays A to G are formed. In each subarray, a plurality of element electron optical systems are two-dimensionally arranged. In each subarray of the present embodiment, 25 element electron optical systems such as D (1,1) to D (5,5) are formed, and each element electron optical system On the wafer, light source images arranged in the X direction and the Y direction at intervals of the pitch Pb (μm) are formed.

A sectional view of each element electron optical system is shown in FIG.

In FIG. 3, reference numeral 301 denotes a blanking electrode having a deflection function, which is composed of a pair of electrodes.
Is a substrate having an aperture (AP) for defining the shape of a transmitted electron beam, which is common to other element electron optical systems. Wiring for turning on / off the blanking electrode 301 and the electrode on it (W)
Are formed. 303 is composed of three aperture electrodes, and uses two unipotential lenses 303a and 303b having a converging function in which the upper and lower electrodes have the same acceleration potential V0 and the middle electrode is kept at another potential V1 or V2. It was an electronic lens.

The upper, middle, and lower electrodes of the unipotential lens 303a and the upper and lower electrodes of the unipotential lens 303b have a shape as shown in FIG. 4 (A). The electrodes are the focus and
The astigmatism control circuit 1 sets a common potential in all the element electron optical systems.

Since the potential of the intermediate electrode of the unipotential lens 303a can be set for each element electron optical system by the focus / astigmatism control circuit 1, the focal length of the unipotential lens 303a can be set for each element electron optical system.

The intermediate electrode of the unipotential lens 303b is composed of four electrodes as shown in FIG. 4 (B),
Since the potential of each electrode can be set individually by the focus / astigmatism control circuit and can be set individually for each element electron optical system, the unipotential lens 303b can have a different focal length in a cross section orthogonal to the element electron optics. It can be set individually for each system.

As a result, the electron optical characteristics (intermediate image forming position, astigmatism) of the element electron optical system can be controlled by controlling the intermediate electrodes of the element electron optical system.

The electron beam made substantially parallel by the condenser lens 2 passes through the blanking electrode 301 and the aperture (AP),
The electron lens 303 forms an intermediate image of the light source. At this time, the beam is not deflected like the electron beam bundle 305 unless an electric field is applied between the blanking electrodes 301. On the other hand, when an electric field is applied between the electrodes of the blanking electrode 301, they are deflected like an electron beam bundle 306. Then, since the electron beam 305 and the electron beam 306 have different angular distributions on the object plane of the reduction electron optical system 4, the electron beam 305 at the pupil position of the reduction electron optical system 4 (on the P plane in FIG. 1). And electron beam bundle 306
Are incident on mutually different regions. Therefore, a blanking aperture BA that transmits only the electron beam bundle 305 is provided at the pupil position (on the P plane in FIG. 1) of the reduction electron optical system.

Further, each element electron optical system corrects the field curvature and astigmatism generated when the intermediate image formed by each element electron is reduced and projected on the surface to be exposed by the reduction electron optical system 4. The electric potentials of the two intermediate electrodes of each element electron optical system are individually set to make the electron optical characteristics (intermediate image forming position, astigmatism) of each element electron optical system different. However, in this embodiment, the element electron optical systems in the same sub-array have the same electro-optical characteristics in order to reduce the wiring between the intermediate electrode and the focus / astigmatism control circuit 1, and the electro-optical characteristics of the element electron optical systems (Intermediate image formation position, astigmatism) is controlled for each sub-array.

Further, a plurality of intermediate images are reduced by the reduction electron optical system 4.
In order to correct the distortion aberration that occurs when the image is reduced and projected on the exposed surface, the distortion characteristics of the reduction electron optical system 4 are known in advance, and based on this, the direction of the direction orthogonal to the optical axis of the reduction electron optical system 4 is determined. The position of each element electron optical system is set.

Next, a system configuration diagram of this embodiment is shown in FIG.

The blanking control circuit 14 turns on / of the blanking electrodes of each element electron optical system of the element electron optical array 3.
control circuit for individually controlling f, focus / astigmatism control circuit 1 (1
5) is a control circuit for individually controlling the electron optical characteristics (intermediate image formation position, astigmatism) of each element electron optical system of the element electron optical array 3.

The focus / astigmatism control circuit 2 (16) is a control circuit for controlling the focal position and astigmatism of the reduction electron optical system 4 by controlling the dynamic stig coil 8 and the dynamic focus coil 7, and the deflection control circuit Reference numeral 17 is a control circuit for controlling the deflector 6, magnification adjustment circuit 18 is a control circuit for adjusting the magnification of the reduction electron optical system 4, and optical characteristic circuit 19 is an excitation current of an electromagnetic lens constituting the reduction electron optical system 4. This is a control circuit that changes the rotational aberration and adjusts the optical axis.

The stage drive control circuit 20 is a control circuit that drives and controls the θ-Z stage and drives and controls the XY stage 12 in cooperation with the laser interferometer 21 that detects the position of the XY stage 12.

The control system 22 synchronously controls the plurality of control circuits and the backscattered electron detector 9 / Faraday cup 10 for exposure and alignment based on the data from the memory 23 in which the drawing pattern is stored. The control system 22 is controlled by a CPU 25 that controls the entire electron beam exposure apparatus via an interface 24.

[Description of Operation] The operation of the electron beam exposure apparatus of this embodiment will be described with reference to FIG.

When the pattern data to be exposed on the wafer is input, the CPU 25 determines the minimum deflection amount given to the electron beam by the deflector 6 based on the minimum line width of the pattern to be exposed on the wafer, the type and shape of the line width. decide. Next, the data is divided into pattern data for each exposure area of each element electron optical system, a common array composed of array elements FME is set using the minimum deflection amount as an array interval, and the pattern data is divided for each element electron optical system. Convert to data represented on a common array. Hereinafter, in order to simplify the description, a description will be given of a process regarding pattern data when performing exposure using the two elementary electron optical systems a and b.

6A and 6B show patterns Pa and Pb to be exposed by the element electron optical systems a and b in the common array DM. That is, each element electron optical system turns off the blanking electrode at the hatched array position where the pattern exists.
Then, the wafer is irradiated with the electron beam.

Normally, the contour portion of the pattern needs to be precisely exposed, but a portion different from the contour portion in the pattern, in other words, the inside of the pattern does not need to be precisely exposed, and if a prescribed exposure amount is applied. good.

Therefore, based on the data of the array position to be exposed for each element electron optical system as shown in FIG. 6, the CPU 25 sets each element electron optical system as shown in FIGS. 7 (A) and 7 (B). , Area F on the array consisting of the array position (array element FME) when exposing the contour part, and area R on the array consisting of the array position (array element FME) when exposing the inside of the pattern The shaded area and the area N (white area) on the array composed of the array position (array element FME) when not exposed are determined. However,
Depending on the shape of the pattern, it may actually be regarded as the outline or the inside of the pattern. Further, in the present embodiment, the width of the contour portion is one array element FME, but it may be two or more.

From the data on the regions F, R and N shown in FIG. 7, from the arrangement position when at least one of the element electron optical systems a and b exposes the contour portion, as shown in FIG. The first area FF (black-painted portion) which is different from the first area, and the second area which is an area different from the first area and has an array position when at least one of the element electron optical systems a and b exposes the inside of the pattern Area RR (shaded area) and a third area NN (white area) formed of array positions when both element electron optical systems a and b are not exposed in common. Further, the second region RR is divided by the array element RME larger than the array interval of the array. At this time, the area that cannot be divided by the array element RME is put into the first area FF. The results are shown in Fig. 8 (B).

A plurality of electron beams are arranged in the first area FF on the array.
Position, the electron beam is deflected by the deflector 6 and exposed by using the minimum deflection amount (arrangement interval of the array) as a unit, so that the contours of all patterns exposed on the wafer are precisely exposed. it can. When a plurality of electron beams are located in the second region RR on the array, the deflector 6 deflects and exposes the electron beams in units of a deflection amount larger than the minimum deflection amount (arrangement interval of the array). By
The inside of the pattern that does not require fineness can be exposed a smaller number of times during the exposure. Furthermore, when a plurality of electron beams are located in the third region NN on the array, the electron beams are deflected without settling, so that unnecessary deflection of the electron beams can be reduced and exposure can be performed.

Therefore, the CPU 25 determines the array position of the array elements FME and RME to be exposed as shown in FIG. 9A from the data on the regions FF, RR and NN shown in FIG. The deflection control data is created so that is located only in the array elements FME and RME to be exposed. That is, as shown in FIG. 9B, sequential data for controlling the positions of a plurality of electron beams to be settled on the deflection path is created. In this embodiment, the second region RR is an array element larger than the array interval of the array.
Although it is divided only by RME, the area composed of array element RME is divided by array element XRME larger than array element RME,
At this time, the area that cannot be divided by the array element XRME is
It may be configured by RME. The results are shown in FIG. 9 (C). Then, deflection control data may be created such that the electron beam is located only in the array elements FME, RME, XRME to be exposed.
Then, the area composed of array element XRME is the array element RM.
The electron beam can be deflected and exposed by the deflector 6 with a deflection amount larger than the unit deflection amount of the region constituted by E as a unit. Therefore, during exposure, the inside of the pattern that does not require fineness can be exposed with a smaller number of times.

Further, in order to expose the pattern, it is necessary to control the blanking electrode based on the arrangement position of each of the plurality of electron beams to irradiate the electron beam from each element electron optical system. FIGS. 10 (A) and 10 (B) show the irradiation of electron beams corresponding to the arrangement positions of the electron beams from the respective element electron optical systems, that is, the hatched arrangement elements are irradiated with the electron beams. It represents. Then, blanking control data corresponding to the array position for each element electron optical system is created.

From the above, the CPU 25 determines the array position, from the pattern data to be exposed on the wafer, as shown in FIG.
Exposure control data having elements of blanking control data including the array element type and the operation time of the blanking electrode of each element electron optical system is created. In the present embodiment, these processes are performed by the CPU 25 of the electron beam exposure apparatus. However, the purpose and effect are not changed even if the processing is performed by another processing apparatus and the exposure control data is transferred to the CPU 25.

Next, when the CPU 25 commands the control system 22 to execute “exposure” via the interface 24, the control system 22
Executes the following steps based on the data on the memory 23 to which the above-described exposure control data has been transferred.

(Step 1) The control system 22 commands the deflection control circuit 17 based on the exposure control data from the memory 23 transferred in synchronization with the internal reference clock, and causes the sub deflector of the deflector 6 to Blanking control circuit while deflecting multiple electron beams from the element electron optical system array
14 blanking electrodes for each element electron optical system ordered to wafer
5. Turn on / off according to the pattern to be exposed. At this time, the XY stage 12 is continuously moving in the X direction, and the deflection control circuit 17 controls the deflection position of the electron beam including the amount of movement of the XY stage 12. At this time, the blanking electrode off time of the element electron optical system is changed or the size of the light source image on the wafer is changed depending on the type (FME, RME) of the array element. Since the array element RME has a larger effective exposure area than the array element FME, underexposure occurs when the exposure time is the same as that of the array element FME. Control. Alternatively, in the exposure with the array element RME, the circuit for controlling the electron gun 1 (not shown) largely changes the crossover image of the light source of the electron gun. Alternatively, the light source image on the wafer is enlarged by decreasing the focal length of the element electron optical system. (The magnification of the intermediate image formed by the element electron optical system is determined by the ratio of the focal length of the condenser lens 2 to the focal length of the element electron optical system.) However, when the focal length of the element electron optical system is reduced, an intermediate image is formed. The position changes. At that time, a position change in the optical axis direction of the light source image on the wafer due to a change in the intermediate image forming position is corrected by a refocusing coil provided in the reduction electron optical system 4 (not shown).

Further, when the exposure by the array element RME and the exposure by the array element FME coexist during the exposure, the load on the control system is large. Therefore, as shown in FIG. Sequential exposure may be performed at the positions, and then the sequential control data may be changed so that the sequential exposure is performed at the deflection position where the exposure is performed by the array element FME as shown in FIG.

As a result, the electron beams from the respective element electron optical systems are transferred to the wafer as shown in FIGS. 10 (A) and 10 (B).
5 Scan and expose the upper exposure field (EF). Further, a plurality of electron beams of one sub-array expose a sub-array exposure field (SEF) in which the exposure fields of the respective element electron optical systems in the sub-array are adjacent to each other as shown in FIG. Therefore, the wafer 5 is exposed to the subfields formed by the subarray exposure fields (SEF) formed by the subarrays A to G as shown in FIG.

(Step 2) After exposing the subfield shown in FIG. 15, the control system 22 commands the deflection control circuit 17 to expose the subfield, and the main deflector of the deflector 6 causes the element electron optical system to operate. Deflection multiple electron beams from the array. At this time, the control system 22 instructs the focus / astigmatism control circuit 2 to control the dynamic focus coil 7 based on the previously obtained dynamic focus correction data to correct the focus position of the reduction electron optical system 4. The dynamic stig coil 8 is controlled based on the previously obtained dynamic astigmatism correction data to correct the astigmatism of the reduction electron optical system. Then, the operation of step 1 is performed to expose the subfield.

By repeating the above steps 1 and 2,
As shown in FIG. 5, sub-fields are sequentially exposed to expose the entire surface of the wafer.

Next, an embodiment of a device manufacturing method using the electron beam exposure apparatus and the exposure method described above will be described.

FIG. 16 shows minute devices (semiconductor chips such as IC and LSI, liquid crystal panel, CCD, thin film magnetic head,
2 shows a flow of manufacturing a micromachine or the like. Step 1
In (circuit design), a circuit of a semiconductor device is designed.
In step 2 (exposure control data creation), exposure control data of the exposure apparatus is created based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the prepared exposure control data has been input. The next step 5 (assembly) is called the post-process, and step 4
Is a process of forming a semiconductor chip using the wafer produced by the above process, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 17 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 1
In 5 (resist processing), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern is printed on the wafer by exposure using the above-described exposure apparatus. Step 17
In (development), the exposed wafer is developed. Step 18
In (etching), portions other than the developed resist image are scraped off. In step 19 (resist stripping), the resist that is no longer needed after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device, which has been difficult to manufacture conventionally, at a low cost.

[0063]

As described above, according to the present invention, it is possible to provide a multi-electron beam type electron beam exposure method capable of reducing the decrease in throughput even if the pattern size to be exposed is miniaturized.

[Brief description of drawings]

FIG. 1 is a diagram showing an outline of a main part of an electron beam exposure apparatus according to the present invention.

FIG. 2 is a diagram illustrating an element electron optical system array 3;

FIG. 3 is a diagram illustrating an element electron optical system.

FIG. 4 is a diagram illustrating electrodes of an element electron optical system.

FIG. 5 is a diagram illustrating a system configuration according to the present invention.

FIG. 6 is a diagram illustrating a pattern to be exposed by each element electron optical system.

FIG. 7 is a diagram for explaining determination of a pattern area to be exposed by each element electron optical system.

FIG. 8 is a diagram illustrating determination of a region of an array defined by a deflector.

FIG. 9 is a diagram illustrating deflection control data.

FIG. 10 is a diagram illustrating blanking control data.

FIG. 11 is a view for explaining exposure control data.

FIG. 12 is a diagram illustrating divided scanning exposure according to array elements.

FIG. 13 is a diagram illustrating a sub-array exposure field (SEF).

FIG. 14 is a diagram illustrating subfields.

FIG. 15 is a view for explaining exposure of the entire surface of the wafer.

FIG. 16 is a diagram illustrating a manufacturing flow of a micro device.

FIG. 17 is a diagram illustrating a wafer process.

FIG. 18 is a diagram illustrating a conventional multi-beam type electron beam exposure apparatus.

[Explanation of symbols]

 1 electron gun 2 condenser lens 3 element electron optical system array 4 reduction electron optical system 5 wafer 6 deflector 7 dynamic focus coil 8 dynamic stig coil 9 backscattered electron detector 10 Faraday cup 11 θ-Z stage 12 XY stage 13 stage reference plate 14 blanking control circuit 15 focus / astigmatism control circuit 1 16 focus / astigmatism control circuit 2 17 deflection control circuit 18 magnification adjusting circuit 19 optical characteristic circuit 20 stage drive control circuit 21 laser interferometer 22 control system 23 memory 24 interface 25 CPU

Claims (9)

[Claims] 1. A plurality of electron beams are made incident on different positions on a substrate surface and deflected by a common deflector, whereby the positions of the plurality of electron beams are sequentially set in accordance with the same arrangement defined by the deflectors. An electron beam exposure method of individually controlling irradiation of each of the plurality of electron beams to expose the substrate, wherein at least one of the plurality of electron beams exposes a contour portion in a pattern to be exposed. Determining a first region on the array of positions on the array, the region being different from the first region and having a contour in a pattern to be exposed by at least one of the plurality of electron beams Determining a second region on the array that comprises positions on the array when exposing a portion different from the part, and in the first region, the array spacing of the array. Deflecting the plurality of electron beams by using as a unit of deflection amount to settle their positions; and in the second region, deflecting the plurality of electron beams using a deflection amount larger than the arrangement interval of the arrangement as a unit. And settling the position thereof, the electron beam exposure method. 2. A step of deflecting the positions of the plurality of electron beams without settling in a region on the array different from the first and second regions.
Electron beam exposure method. 3. The size of the electron beam deflected in the second region on the substrate surface is made larger than the size of the electron beam deflected in the first region on the substrate surface. The electron beam exposure method according to claim 1, further comprising a step. 4. The method according to claim 1, further comprising the step of determining an arrangement interval of the arrangements based on a minimum line width of a pattern to be exposed on a wafer, a type of the line width, and a shape.
3. An electron beam exposure method according to any one of items 1 to 3. 5. A device manufacturing method comprising manufacturing a device using the electron beam exposure method according to claim 1. 6. An irradiation means for making a plurality of electron beams incident on different positions on a substrate surface, and a position of the plurality of electron beams being sequentially arranged according to the same arrangement by giving the same deflection amount to the plurality of electron beams. In an electron beam exposure apparatus for exposing the substrate, which has a deflection means for settling and a blanking means for individually controlling irradiation of the plurality of electron beams, at least one of the plurality of electron beams should be exposed. In the first area on the array, which is formed by the position on the array when the contour portion in the pattern is exposed, the plurality of electron beams are deflected by the deflecting unit using the array interval of the array as a unit of deflection amount. And settles, and exposes a region different from the first region and different from the contour portion in the pattern to be exposed by at least one of the plurality of electron beams. In the second region on the array, which is composed of the positions on the array when the above-mentioned arrangement is performed, it is preferable to have control means for deflecting and stabilizing the plurality of electron beams in units of a deflection amount larger than the array interval of the array. A characteristic electron beam exposure system. 7. The control means does not settle the positions of the plurality of electron beams by the deflection means in a region on the array different from the first and second deflection regions. 6. The electron beam exposure method of 6. 8. A changing means for changing the sizes of the plurality of electron beams on the surface of the substrate, the control means comprising:
The size of the electron beam in the second region on the substrate surface is made larger than the size of the electron beam in the first region on the substrate surface by the changing means. 6 and 7 electron beam exposure methods. 9. A device manufacturing method comprising manufacturing a device using the electron beam exposure apparatus according to claim 6.