JPH0936063A - 集積回路の形成方法 - Google Patents

集積回路の形成方法

Info

Publication number
JPH0936063A
JPH0936063A JP8161735A JP16173596A JPH0936063A JP H0936063 A JPH0936063 A JP H0936063A JP 8161735 A JP8161735 A JP 8161735A JP 16173596 A JP16173596 A JP 16173596A JP H0936063 A JPH0936063 A JP H0936063A
Authority
JP
Japan
Prior art keywords
conductive layer
layer
conductive
aluminum
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8161735A
Other languages
English (en)
Japanese (ja)
Inventor
Sailesh Chittipeddi
チッティペディ セイレッシュ
Sailesh Mansinh Merchant
マンシン マーシャント セイレッシュ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of JPH0936063A publication Critical patent/JPH0936063A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP8161735A 1995-07-07 1996-06-21 集積回路の形成方法 Pending JPH0936063A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49950995A 1995-07-07 1995-07-07
US499509 1995-07-07

Publications (1)

Publication Number Publication Date
JPH0936063A true JPH0936063A (ja) 1997-02-07

Family

ID=23985538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8161735A Pending JPH0936063A (ja) 1995-07-07 1996-06-21 集積回路の形成方法

Country Status (5)

Country Link
US (1) US5798300A (2)
EP (1) EP0752718A3 (2)
JP (1) JPH0936063A (2)
KR (1) KR970008360A (2)
TW (1) TW298674B (2)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW417178B (en) * 1996-12-12 2001-01-01 Asahi Chemical Ind Method for making semiconductor device
US6365514B1 (en) * 1997-12-23 2002-04-02 Intel Corporation Two chamber metal reflow process
US6440082B1 (en) * 1999-09-30 2002-08-27 Medtronic Physio-Control Manufacturing Corp. Method and apparatus for using heart sounds to determine the presence of a pulse
US6747445B2 (en) 2001-10-31 2004-06-08 Agere Systems Inc. Stress migration test structure and method therefor
US20030207558A1 (en) * 2002-05-06 2003-11-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method forming copper containing semiconductor features to prevent thermally induced defects

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219788A (en) * 1991-02-25 1993-06-15 Ibm Corporation Bilayer metallization cap for photolithography
DE4200809C2 (de) * 1991-03-20 1996-12-12 Samsung Electronics Co Ltd Verfahren zur Bildung einer metallischen Verdrahtungsschicht in einem Halbleiterbauelement
CA2061119C (en) * 1991-04-19 1998-02-03 Pei-Ing P. Lee Method of depositing conductors in high aspect ratio apertures
US5171412A (en) * 1991-08-23 1992-12-15 Applied Materials, Inc. Material deposition method for integrated circuit manufacturing
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US5358616A (en) * 1993-02-17 1994-10-25 Ward Michael G Filling of vias and contacts employing an aluminum-germanium alloy
JP2928057B2 (ja) * 1993-07-01 1999-07-28 日本電気株式会社 半導体装置の製造方法
US5356836A (en) * 1993-08-19 1994-10-18 Industrial Technology Research Institute Aluminum plug process
US5427666A (en) * 1993-09-09 1995-06-27 Applied Materials, Inc. Method for in-situ cleaning a Ti target in a Ti + TiN coating process
US5360995A (en) * 1993-09-14 1994-11-01 Texas Instruments Incorporated Buffered capped interconnect for a semiconductor device
US5470790A (en) * 1994-10-17 1995-11-28 Intel Corporation Via hole profile and method of fabrication
US5604157A (en) * 1995-05-25 1997-02-18 Industrial Technology Research Institute Reduced notching of polycide gates using silicon anti reflection layer

Also Published As

Publication number Publication date
KR970008360A (ko) 1997-02-24
US5798300A (en) 1998-08-25
EP0752718A2 (en) 1997-01-08
TW298674B (2) 1997-02-21
EP0752718A3 (en) 1997-03-05

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