JPH0936429A - Method for producing group 3-5 compound semiconductor - Google Patents

Abstract

(57) Abstract: A method for producing a group III-V compound semiconductor capable of producing a uniform and high-yield group III-V compound semiconductor thin film, particularly a uniform emission state and high yield when used as a light emitting device. Provided is a method for producing a 3-5 group compound semiconductor for a light emitting device, which is capable of obtaining a light emitting device. A general formula In _x Ga _y Al _z N (where x is
+ Y + z = 1, 0 <x ≦ 1, 0 ≦ y <1, 0 ≦ z <1)
A first layer of in represented by 3-5 group compound semiconductor vapor phase growth, then the general formula In _u Ga _v Al _w N (provided that, u + v
+ W = 1, 0 ≦ u ≦ 1, 0 ≦ v ≦ 1, 0 ≦ w ≦ 1) to produce a Group 3-5 compound semiconductor by vapor phase growth of the second layer. 3-5, which comprises the step of supplying the carrier gas or the carrier gas and the group 5 raw material without growing the group 3 raw material after the growth of the layer 3 and before the growth of the second layer 3-5. Method of manufacturing group compound semiconductor.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a group 3-5 compound semiconductor, and more particularly to a method for manufacturing a group 3-5 compound semiconductor for light emitting devices.

[0002]

2. Description of the Related Art Conventionally, light emitting diodes in the ultraviolet, blue, and green regions (hereinafter sometimes referred to as LEDs) or ultraviolet,
As a material for a light emitting element such as a laser diode in a blue or green region, In _x Ga _y Al _z N (where x + y +
A 3-5 group compound semiconductor represented by z = 1, 0 <x ≦ 1, 0 ≦ y <1, 0 ≦ z <1) is known.

Since good crystals cannot be obtained by bulk growth of the compound semiconductor, it is difficult to perform homoepitaxial growth using the compound semiconductor itself as a substrate. By the way, the general formula Ga _a Al _b N (where a + b = 1, 0
≦ a ≦ 1, 0 ≦ b ≦ 1) is a compound semiconductor represented by Ga
It is known that a good crystallinity can be obtained by using a buffer layer such as N or AlN. The Ga
_a Al _b N has the same Group 5 element as the In _x Ga _y Al _z N, and has the same crystal structure.
_x Ga _y Al _z N can be obtained on higher crystallinity by grown on the above-mentioned Ga _a Al _b N.

By the way, the lattice constant of the compound semiconductor is
It changes greatly depending on the mixed crystal ratio. In particular, InN has a lattice constant larger than that of GaN or AlN by about 12% or more. Therefore, depending on the mixed crystal ratio of each layer of the compound semiconductor, a large difference may occur in the lattice constant between the layers. . If there is a large lattice mismatch, defects may occur in the crystal, which causes deterioration of crystallinity. In general, it is difficult to realize high luminous efficiency with a light emitting element manufactured using a crystal containing many defects.

In order to suppress the generation of defects due to lattice mismatch, the layer thickness must be reduced according to the magnitude of strain due to lattice mismatch. However, when a very thin layer is used as the active layer, the physical properties of the light emitting layer are affected by the mixed crystal ratio of the light emitting layer or a slight fluctuation of the layer thickness, and the desired light emission wavelength is uniform over the entire substrate surface. It was difficult to fabricate a light-emitting element having high emission intensity.

[0006]

SUMMARY OF THE INVENTION An object of the present invention is to provide a method for producing a Group III-V compound semiconductor capable of producing a uniform and high-yield Group III-V compound semiconductor thin film, particularly a light emitting state when used as a light emitting device. The object of the present invention is to provide a method for producing a 3-5 group compound semiconductor for a light emitting device, which is capable of obtaining a light emitting device having a uniform yield and a high yield.

[0007]

Means for Solving the Problems The present inventors
As a result of diligent studies on the growth conditions of the thin film of the group III compound semiconductor, a high quality and uniform thin film can be obtained by providing a step of stopping the supply of the group 3 raw material after growing the thin film of the compound semiconductor until the next layer is grown. The inventors have found that they can be obtained and have completed the present invention.

That is, the present invention is the invention described below. [1] general formula In _x Ga _y Al _z N (provided that, x + y +
z = 1, 0 <x ≦ 1, 0 ≦ y <1, 0 ≦ z <1), the first layer of the Group 3-5 compound semiconductor is vapor-deposited, and then the general formula In _u Ga _v Al _w N (however, u + v + w =
1, 0 ≤ u ≤ 1, 0 ≤ v ≤ 1, 0 ≤ w ≤ 1) to produce a Group 3-5 compound semiconductor by vapor phase growth of the second layer. 3-5 group compound characterized in that it has a step of supplying a carrier gas or a carrier gas and a group 5 raw material without growing the group 3 raw material after the growth of the second layer and before the growth of the second layer. Semiconductor manufacturing method. [2] The method for producing a Group 3-5 compound semiconductor according to [1], wherein the mixed crystal ratio of InN in the first layer is 5% or more.

[3] The layer thickness of the first layer is 10 Å or more 500
Å The method for producing a Group 3-5 compound semiconductor according to [1] or [2], characterized in that [4] The concentration of each element of Si, Ge, Cd, Zn and Mg contained in the first layer is 10 ¹⁹ cm ^-3 or less, [1], [2] or [2] 3] The method for producing a 3-5 group compound semiconductor as described above.

[0010]

Next, the present invention will be described in detail.
Generally used as a substrate for crystal growth of the Group 3-5 compound semiconductor
For example, sapphire, ZnO, GaAs, Si, SiC,
NGO (NdGaO_Three), Spinel (MgAl _TwoO_Four)
Are used. In particular, sapphire is transparent and
It is preferable because a high-quality crystal having a large area can be obtained.

As the method for producing the 3-5 group compound semiconductor, a molecular beam epitaxy (hereinafter sometimes referred to as MBE) method, a metal organic chemical vapor deposition (hereinafter sometimes referred to as MOVPE) method, Hydride vapor phase growth (hereinafter, HV
Sometimes referred to as PE. ) The law is known. Among them, the MOVPE method is preferable because a uniform film can be formed over a large area, and the MOVPE method is used as the method for producing a Group 3-5 compound semiconductor of the present invention.

Method for producing group 3-5 compound semiconductor of the present invention
In the above, the following raw materials can be used.
That is, as a Group 3 raw material, trimethylgallium [(CH
_Three)_ThreeGa may be referred to as TMG hereinafter. ], Trie
Chilgallium [(C_TwoH_Five)_ThreeGa, hereinafter referred to as TEG
Sometimes. ], Etc.₁R_TwoR_ThreeGa (here
R₁, R_Two, R _ThreeRepresents a lower alkyl group. )
Trialkyl gallium; trimethyl aluminum
[(CH_Three)_ThreeAl], triethyl aluminum [(C
_TwoH_Five)_ThreeAl, hereinafter sometimes referred to as TEA. ]
Liisobutyl aluminum [(i-C _FourH₉)_ThreeA
l], etc.₁R_TwoR_ThreeAl (where R₁,
R_Two, R_ThreeRepresents a lower alkyl group. ) Represented by
Alkyl aluminum; trimethylamine alane [(C
H_Three)_ThreeN: AlH_Three]; Trimethylindium [(C
H_Three)_ThreeIn, hereafter referred to as TMI. ],bird
Ethyl indium [(C_TwoH_Five) _ThreeIn] or other general formula R
₁R_TwoR_ThreeIn (where R₁, R_Two, R_ThreeIs lower alk
Represents a radical. ) Trialkylindium represented by
No. These may be used alone or as a mixture.

Next, examples of the Group 5 raw material include ammonia, hydrazine, methylhydrazine, 1,1-dimethylhydrazine, 1,2-dimethylhydrazine, t-butylamine, ethylenediamine and the like. These may be used alone or as a mixture. Among these raw materials, ammonia and hydrazine do not contain a carbon atom in the molecule, so that the contamination of the semiconductor with carbon is small and suitable. The 3
Group 2 elements are important as p-type dopants for Group-5 compound semiconductors. Specifically, Mg, Zn, Cd, Hg, B
Among these, Mg is preferable, and Mg is preferable because it is easy to form a p-type having a low resistance. Raw materials for the Mg dopant include biscyclopentadienyl magnesium, bismethylcyclopentadienyl magnesium, bisethylcyclopentadienyl magnesium, bis-n-propylcyclopentadienyl magnesium, bis-i-propylcyclopentadienyl magnesium. General formula (RC
₅ H ₄ ) ₂ Mg (where R is H or 1 or more carbon atoms 4
The following lower alkyl groups are shown. The organic metal compound represented by the formula (1) is suitable because it has an appropriate vapor pressure. The 3-
Group 4 and group 6 elements are important as n-type dopants for group 5 compound semiconductors. Specific examples include Si, Ge, and O. Among these, low resistance n-type is easy to form,
Si is preferable because it can obtain a material having high purity. Silane (SiH ₄ ), disilane (Si ₂ H ₆ ), and the like are suitable as the raw material of the Si dopant. The carrier gas may be an inert gas such as nitrogen or argon, but nitrogen is preferable because it is easy to obtain a high purity gas.

The present invention has the general formula In _x Ga _y Al _z N
(However, x + y + z = 1, 0 <x ≦ 1, 0 ≦ y <1,
After growing the first layer represented by 0 ≦ z <1), the general formula In _u Ga _v Al _w N (where u + v + w = 1, 0 ≦
u ≦ 1, 0 ≦ v ≦ 1, 0 ≦ w ≦ 1), the carrier gas is supplied or the carrier gas is supplied without supplying the Group 3 source material before the vapor phase growth of the second layer. It is characterized by having a step of supplying a Group 5 raw material. Although the reason is not clear, it is possible to obtain a uniform Group 3-5 compound semiconductor by having a step of interrupting the growth without supplying the Group 3 raw material (hereinafter, sometimes referred to as a growth interrupting step). In particular, when the Group 3-5 compound semiconductor is used in a light emitting device, it is possible to obtain a light emitting device that emits light with a uniform wavelength and intensity in the plane of the substrate. Especially, InN is 5% in mixed crystal ratio.
There is a remarkable effect for the layers including the above. It is considered that the crystal of the first layer is modified by having the growth interruption step. When the growth interruption time is sufficiently short, the Group 5 raw material may or may not be supplied. However, if the growth interruption is long, the crystallinity of the first layer may deteriorate unless the Group 5 raw material is supplied, so that it is preferable to supply the Group 5 raw material. The time for interrupting the growth depends on the temperature, atmosphere, etc. for interrupting the growth, but if it is too short, the effect of growth interruption is insufficient, and if it is too long, it is difficult to obtain the target InN mixed crystal ratio. The period of preferable growth interruption is 1 second or more and 60 minutes or less, and further preferably 30
It is not less than 2 seconds and not more than 30 minutes.

The effects of the growth interruption step will be specifically described below. FIG. 1 is an example of a quantum well structure that can be manufactured using the compound semiconductor. A buffer layer 2 is grown on a substrate 1, and further, the Ga _a Al _b N layer 3, the In _x Ga _y Al _z N layer 4 which is the first layer of the present invention, and the second layer of the present invention. The In _u Ga _v Al _w N layer 5 is grown. Ga _a
Al _b N layer 3 and In _u Ga _v Al _w a band gap of N layer 5 is larger than In _x Ga _y Al _z N layer 4, In _x Ga _y Al by a so-called double heterostructure
_{The zN} layer 4 becomes a quantum well layer, and strong photoluminescence (hereinafter sometimes referred to as PL) from the quantum well layer is observed. In this case, the emission wavelength of PL mainly depends on the composition of the Group 3 element of the quantum well layer and the layer thickness of the quantum well layer.
Further, the PL intensity strongly reflects the crystallinity of the structure including the quantum well layer, and generally, the higher the crystallinity, the stronger the PL intensity.
Therefore, by evaluating the semiconductor having the structure of FIG. 1 using PL, the mixed crystal ratio of the quantum well layer, the layer thickness, the crystallinity of the laminated structure including the quantum well, and the uniformity in the plane of the substrate are obtained. Can be evaluated. When the second layer is grown immediately after the growth of the first layer without interruption, the emission wavelength and intensity of PL in the substrate surface are more non-uniform than when the growth is interrupted. The PL strength is weak overall. As the growth interruption time becomes longer, the uniformity of the emission wavelength and intensity of PL in the plane of the substrate improves, and the PL intensity also becomes stronger as a whole. However, the PL emission wavelength tends to become shorter as the growth interruption time becomes longer. Therefore, when the growth interruption is carried out for a long time, the mixed crystal ratio of the first layer should be set in consideration of the wavelength shift. It is preferable to adjust in advance. In the above example, there is only one first layer, but in the case of a structure in which the compound semiconductor is laminated in a plurality of layers, it is possible to provide a layer having excellent uniformity by providing an appropriate growth interruption step after the growth of each layer. The structure can be made.

Next, a light emitting device obtained by using the 3-5 group compound semiconductor obtained by the method for producing a 3-5 group compound semiconductor of the present invention will be described. In the quantum well structure shown in FIG. 1, the layers 3 and 5 in contact with the light emitting layer 4 have different conductivity from each other, whereby a light emitting element having a double hetero structure is obtained. From the viewpoint of easy growth, the layer below the light emitting layer is generally of n-type. By suspending the growth after the growth of the light emitting layer, it is possible to manufacture a semiconductor substrate of a light emitting element having excellent uniformity and high light emission efficiency. In order to make the layer in contact with the active layer have conductivity, these layers are doped with impurities, but the doping may reduce the crystallinity of these layers, resulting in a decrease in luminous efficiency. . In such a case, the emission efficiency may be improved by providing a layer having a low impurity concentration between the active layer and these layers. An example of such a structure is shown in FIG.

Although FIG. 2 shows an example in which a single quantum well layer is used as a light emitting layer, the layer functioning as a light emitting layer may be a layer composed of a plurality of layers. A specific example in which a layer composed of a plurality of layers functions as a light emitting layer is a structure in which two or more light emitting layers are stacked with a layer having a larger band gap. When the first layer which is the light emitting layer contains Al,
When impurities such as O are easily taken in and used as the light emitting layer, the light emitting efficiency may be lowered. In such a case, the general formula In _x Ga _y containing no Al as the light emitting layer is used.
What is represented by N (however, x + y = 1, 0 <x <1, 0 <y <1) can be utilized.

As described above, since the lattice constant of the 3-5 group compound semiconductor greatly changes depending on the mixed crystal ratio, the lattice constant between the layers of the 3-5 group compound semiconductor has a large lattice constant. If there is a mismatch, the layer thickness must be reduced depending on the magnitude of strain due to lattice mismatch. The preferred thickness range depends on the amount of strain. The InN mixed crystal ratio of 10% or more on the Ga _a Al _b N
When laminating a Group-5 compound semiconductor, the thickness of the layer containing In is preferably 5 Å or more and 500 Å or less. When the thickness of the layer containing In is smaller than 5Å, the luminous efficiency becomes insufficient. On the other hand, when it is larger than 500Å, defects occur and the luminous efficiency is not sufficient. A more preferable thickness range is 5 Å or more and 90 Å or less. Further, by reducing the layer thickness of the light emitting layer, charges can be confined in the light emitting layer with high density, and thus the light emission efficiency can be improved. Therefore, even when the difference in lattice constant is smaller than that in the above example, it is preferable that the layer thickness of the light emitting layer be the same as that in the above example.

By doping the light emitting layer with impurities, it is possible to emit light at a wavelength different from the band gap of the light emitting layer. Since this is light emission from impurities, it is called impurity light emission. In the case of impurity emission, the emission wavelength is determined by the composition of the Group 3 element of the light emitting layer and the impurity element. in this case,
The InN mixed crystal ratio of the light emitting layer is preferably 5% or more. When the InN mixed crystal ratio is less than 5%, most of the emitted light is ultraviolet light, and sufficient brightness cannot be felt. In
The emission wavelength becomes longer as the mixed crystal ratio is increased, and the emission wavelength can be adjusted from purple to blue and green. Impurities suitable for light emission are preferably Group 2 elements. Among the Group 2 elements, doping with Mg, Zn, and Cd is preferable because the luminous efficiency is high. Especially, Zn is preferable. The concentration of these elements is preferably 10 ¹⁸ to 10 ²² cm ⁻³ . The third layer may be co-doped with Si or Ge along with these Group 2 elements. The preferred concentration range of Si and Ge is 1
It is 0 ¹⁸ to 10 ²² cm ^-3 .

In the case of impurity emission, the emission spectrum generally becomes broad, and the emission spectrum may shift as the amount of injected charges increases. Therefore, when high color purity is required or when it is necessary to concentrate light emission power in a narrow wavelength range, it is more advantageous to use band edge emission. In order to realize a light-emitting element using band-edge light emission, the amount of impurities contained in the light-emitting layer must be kept low. Specifically, the concentration of each element of Si, Ge, Mg, Cd, and Zn is 10 ¹⁹
cm ⁻³ or less is preferable. More preferably 10 ¹⁸ cm ^-3
It is the following.

In the case of band edge emission, the emission color is 3 of the emission layer.
Determined by the composition of group elements. When emitting light in the visible region, In
The N mixed crystal ratio is preferably 10% or more. InN mixed crystal ratio is 10
If it is less than%, the emitted light is mostly ultraviolet rays and sufficient brightness cannot be sensed. The emission wavelength becomes longer as the InN mixed crystal ratio increases, and the emission wavelength can be adjusted from purple to blue and green.

When the mixed crystal ratio of InN in the light emitting layer is high, thermal stability is not sufficient, and deterioration may occur during crystal growth or in a semiconductor process. For the purpose of preventing such deterioration of the light emitting layer, the second layer of the present invention grown next to the light emitting layer may have a protective function. Second
In order to give the layer (1) a sufficient protective function, the InN mixed crystal ratio of the second layer is preferably 10% or less, and the AlN mixed crystal ratio thereof is preferably 5% or more. More preferably, the InN mixed crystal ratio is 5% or less, and the AlN mixed crystal ratio is 10% or more. Further, in order to give the second layer a sufficient protective function, the thickness of the second layer is preferably 10 Å or more and 1 μm or less. More preferably, it is 50 Å or more and 5000 Å or less. If the film thickness of the protective layer is less than 10Å, a sufficient effect cannot be obtained. Also, 1
If it is larger than μm, the luminous efficiency is reduced, which is not preferable.

[0023]

EXAMPLES Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited thereto. Example 1 A 3-5 group compound semiconductor having the structure shown in FIG. 1 was produced by the MOVPE method, the PL spectrum was measured, and the in-plane distribution of the light emitting state was evaluated. A 25 mm × 25 mm sapphire C surface mirror-polished was used as a substrate after organic cleaning. The growth uses GaN as a low temperature growth buffer layer. 2
The step growth method was used. Ga of about 2.5 μm thickness at normal pressure
The N layer 3 was grown. Next, the reactor pressure is 0.5 atm, the substrate temperature is 785 ° C., the carrier gas is nitrogen, and the carrier gas, TEG, TMI, and ammonia are each 6 sl.
m, 0.04 sccm, 0.4 sccm, and 4 slm are supplied to the In _0.3 Ga _0.7 N layer 4 which is the first layer of the present invention.
Were grown for 70 seconds. However, slm and sccm are units of gas flow rate, and 1 slm indicates that a weight of gas occupies 1 liter volume in a standard state per minute, and 1000 sccm corresponds to 1 slm.

Nitrogen and ammonia only as growth interruption step
After maintaining the state of supplying
TEG, TEA and ammonia 0.03 each
Supply 2sccm, 0.008sccm, 4slm,
Ga which is the second layer of the present invention _0.8Al_0.2N layer 5 to 10
Grew for a minute. Regarding the layer thickness of layers 4 and 5
Is the thickness of the layer grown for a longer time under the same conditions.
The calculated growth rates are 43Å / min and 30Å / min, respectively.
Therefore, the layer thickness obtained from the above growth time is 5
It can be calculated as 0Å and 300Å. 3-made by the above
A Group 5 compound semiconductor sample was measured using a He-Cd laser of 325n.
PL measurement was performed at room temperature using the emission of m as an excitation light source.
However, the peak wave was generated on the entire surface of the substrate except the periphery 5 mm.
A strong light emission with a length of around 5000 Å was observed. Figure 3
1 shows a typical PL spectrum. Peak wavelength of spectrum
The output of the detector at was 7.4 mV.

Example 2 A sample was prepared in the same manner as in Example 1 except that the growth interrupting step was 2 minutes. PL of this sample at room temperature
When the measurement was performed in the same manner as in Example 1, the periphery was 5 mm.
In the surface of the substrate except for, a part where the PL was weak was also recognized partially, but most showed strong PL as in Example 1. Typical PL spectra of strong and weak portions of PL are shown in FIG. The area ratio of the portion having a strong PL and the portion having a weak PL in the substrate surface was about 3: 1. The peak intensities of the spectra from the strong PL portion and the weak PL portion were approximately 4 mV and 0.17 mV, respectively.

Comparative Example 1 After the growth of the first layer 4, Ga _0.8 Al was not interrupted.
_A sample was prepared in the same manner as in Example 1 except that the _0.2 N layer 5 was grown. When PL was evaluated at room temperature for this sample in the same manner as in Example 1, no light emission was observed over almost the entire surface, although some light was emitted. The PL spectrum of the part that emits the strongest light is shown in FIG. The peak intensity was only about 0.1 mV.

Example 3 A GaN buffer layer 2 was formed in the same manner as in Example 1, and 1
Si-doped n-type GaN with a film thickness of 2.5 μm by supplying TMG, ammonia and silane gas at 100 ° C.
The layer 6 is grown, and TMG and ammonia are supplied at the same temperature to grow a non-doped GaN layer 7 at 1500Å. Then the substrate temperature is lowered to 785 ° C., nitrogen is 50Å growth TEG, by supplying TMI and ammonia In _{0. 3} Ga _0.7 N layer 4 as a carrier gas. After maintaining the state of supplying only nitrogen and ammonia for 5 minutes, TEG, TEA and ammonia are further supplied at the same temperature to grow the Ga _0.8 Al _0.2 N layer 5 by 300 Å. Next, raise the substrate temperature to 1100 ° C, and increase TMG and Cp2M.
g and Ga doped with Mg to supply Mg
The N layer 8 is grown by 5000Å. 3-made by the above
After the sample of the group 5 compound semiconductor is taken out of the reaction furnace, it is annealed in nitrogen to change the Mg-doped GaN layer into a low-resistance p-type layer. By forming electrodes on the sample thus obtained by an ordinary method to form an LED, the LED can be manufactured with good uniformity in the substrate surface.

[0028]

According to the present invention, the uniform and high yielding 3
A -5 group compound semiconductor thin film can be produced, and particularly when used as a light emitting device, a light emitting device having a uniform light emitting state and a high yield can be obtained, which is extremely useful and has a large industrial value.

[Brief description of drawings]

FIG. 1 is a diagram showing a structure of a Group 3-5 compound semiconductor according to Example 1.

FIG. 2 is a diagram showing a structure of a compound semiconductor light emitting device according to Example 3.

FIG. 3 is a diagram showing a PL spectrum in Example 1.

FIG. 4 is a diagram showing a PL spectrum in Example 2.

5 is a diagram showing a PL spectrum in Comparative Example 1. FIG.

[Explanation of symbols]

1 ... substrate 2 ... buffer layer 3 ... Ga _a Al _b N layer _{4 ... In x Ga y Al z} N layer _{5 ... In u Ga v Al w} N layer 6 ... n-type GaN layer 7 ... undoped GaN layer 8 ... p-type GaN layer

Claims (4)

[Claims] 1. A general formula In _x Ga _y Al _z N (where x is
+ Y + z = 1, 0 <x ≦ 1, 0 ≦ y <1, 0 ≦ z <1)
A first layer of in represented by 3-5 group compound semiconductor vapor phase growth, then the general formula In _u Ga _v Al _w N (provided that, u + v
+ W = 1, 0 ≦ u ≦ 1, 0 ≦ v ≦ 1, 0 ≦ w ≦ 1) to produce a Group 3-5 compound semiconductor by vapor phase growth of the second layer. 3-5, which comprises the step of supplying the carrier gas or the carrier gas and the group 5 raw material without growing the group 3 raw material after the growth of the layer 3 and before the growth of the second layer 3-5. Method of manufacturing group compound semiconductor. 2. The method for producing a Group 3-5 compound semiconductor according to claim 1, wherein the mixed crystal ratio of InN in the first layer is 5% or more. 3. The 3-5 according to claim 1 or 2, wherein the layer thickness of the first layer is 10 Å or more and 500 Å or less.
A method for producing a group III compound semiconductor. 4. Si, Ge, Cd, Z contained in the first layer
The concentration of each element of n and Mg is 10 ¹⁹ cm ^-3
It is the following, The manufacturing method of the 3-5 group compound semiconductor of Claim 1, 2 or 3.