JPH093659A - Production of oxide thin film - Google Patents
Production of oxide thin filmInfo
- Publication number
- JPH093659A JPH093659A JP19882395A JP19882395A JPH093659A JP H093659 A JPH093659 A JP H093659A JP 19882395 A JP19882395 A JP 19882395A JP 19882395 A JP19882395 A JP 19882395A JP H093659 A JPH093659 A JP H093659A
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- JP
- Japan
- Prior art keywords
- thin film
- oxide thin
- precipitate
- lnba
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はＬｎＢａ2 Ｃｕ3 Ｏ7-x
酸化物薄膜を基板上に製造するための製造方法に関す
る。This invention relates to LnBa 2 Cu 3 O 7-x
The present invention relates to a manufacturing method for manufacturing an oxide thin film on a substrate.
【０００２】[0002]
【従来の技術】ＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物薄膜（Ｌ
ｎはＴｂを除くランタノイド元素またはＹ）を例えばシ
リコン等の半導体基板上に成長する方法は従来から種々
提案されており、例えば特開平４−３６５３８３号公報
に記載の技術がある。しかしながら、このように形成し
ようとする薄膜と異なる材料の基板上に薄膜を成長する
過程においては、前記酸化物薄膜材料と異なる組成を有
するＢａとＣｕを含む析出物の核が前記基板と薄膜の界
面で形成され、薄膜よりも速く成長する。そこで、薄膜
成長後に前記析出物が薄膜表面よりも突出されるのを防
ぐため、成膜方法及び成膜条件を工夫することにより、
薄膜中の前記析出物の密度を低減化し、前記析出物のサ
イズを小さくした薄膜の製造方法として次の文献に開示
された技術が知られている。 2. Description of the Related Art LnBa 2 Cu 3 O 7-x oxide thin films (L
Various methods for growing a lanthanoid element other than Tb or Y) on a semiconductor substrate such as silicon have been proposed in the past, for example, as disclosed in Japanese Patent Application Laid-Open No. 4-365383. However, in the process of growing a thin film on a substrate made of a material different from the thin film to be formed in this way, nuclei of a precipitate containing Ba and Cu having a composition different from that of the oxide thin film material are formed between the substrate and the thin film. Formed at the interface and grows faster than thin films. Therefore, in order to prevent the precipitate from protruding from the thin film surface after thin film growth, by devising a film forming method and film forming conditions,
A technique disclosed in the following literature is known as a method for producing a thin film in which the density of the precipitate in the thin film is reduced and the size of the precipitate is reduced.
【０００３】文献１：アプライド・フィジックス・レタ
ーズ（Ａｐｐｌｉｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒ
ｓ），６３（８），１９９３，ｐｐ．１１４６−１１４
８。Reference 1: Applied Physics Letters
s), 63 (8), 1993, p. 1146-114
8.
【０００４】文献２：ジャパニーズ・ジャーナル・オブ
・アプライド・フィジックス（Ｊａｐａｎｅｓｅ Ｊｏ
ｕｒｎａｌ ｏｆ Ａｐｌｉｅｄ Ｐｈｙｓｉｃｓ），
３３（１），１９９４，ｐｐ．Ｌ２０−Ｌ２３。Reference 2: Japanese Journal of Applied Physics (Japanese Jones)
urnal of Applied Physics),
33 (1), 1994, p. L20-L23.
【０００５】文献３：ジャパニーズ・ジャーナル・オブ
・アプライド・フィジックス（Ｊａｐａｎｅｓｅ Ｊｏ
ｕｒｎａｌ ｏｆ Ａｐｌｉｅｄ Ｐｈｙｓｉｃｓ），
３３（３），１９９４，ｐｐ．Ｌ４１７−Ｌ４２０。Reference 3: Japanese Journal of Applied Physics (Japanese Jones)
urnal of Applied Physics),
33 (3), 1994, pp. L417-L420.
【０００６】これらの文献に開示の技術によれば、蒸発
源と基板の距離を調整するか、傾斜基板を使用するか、
あるいは薄膜成長中の酸素雰囲気を最適化することによ
り、前記酸化物薄膜材料と異なる材料の基板上に、前記
析出物の少ない薄膜を連続した１回の成膜工程で形成し
ている。According to the techniques disclosed in these documents, it is necessary to adjust the distance between the evaporation source and the substrate, to use an inclined substrate,
Alternatively, by optimizing the oxygen atmosphere during the growth of the thin film, a thin film having a small amount of the precipitate is formed on a substrate made of a material different from the material of the oxide thin film in one continuous film forming step.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、これら
の技術では、ある程度前記析出物の低減を図ることは可
能であるが、成膜時の条件がより狭いものとなるため、
薄膜中の前記析出物を完全に除去することは困難であっ
た。また、薄膜を連続した１回の成膜工程で形成するた
め、薄膜形成の初期段階で発生した析出物の核を除去す
ることができなかった。さらに、前記析出物の成長する
速さが薄膜の成長する速さよりも速いため、析出物が薄
膜表面より突出していた。However, with these techniques, it is possible to reduce the precipitates to some extent, but the conditions at the time of film formation become narrower.
It was difficult to completely remove the precipitate in the thin film. Further, since the thin film is formed in one continuous film forming process, the nucleus of the precipitate generated in the initial stage of the thin film formation cannot be removed. Further, since the growth rate of the precipitate is faster than the growth rate of the thin film, the precipitate is projected from the surface of the thin film.
【０００８】[0008]
【発明の目的】本発明の目的は、前記した析出物がな
く、表面の平坦なＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物薄膜の
製造方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for producing an LnBa 2 Cu 3 O 7-x oxide thin film having no precipitates and a flat surface.
【０００９】[0009]
【課題を解決するための手段】本発明の製造方法の製造
工程を図１に示す。先ず、同図（ａ）のように、ＬｎＢ
ａ2 Ｃｕ3 Ｏ7-x 酸化物薄膜２を、この酸化物薄膜と異
なる材料の基板１の表面上に（００１）面が主たる膜面
に平行になるように形成する。このとき、形成された薄
膜中にＢａとＣｕを含む析出物３が析出される。次い
で、同図（ｂ）のように、この析出物をエッチング除去
する。しかる上で、同図（ｃ）のように、前記酸化物薄
膜２の上に（００１）面が主たる膜面に平行をなしたＬ
ｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物薄膜４を形成する。FIG. 1 shows a manufacturing process of the manufacturing method according to the present invention. First, as shown in FIG.
An a 2 Cu 3 O 7-x oxide thin film 2 is formed on the surface of a substrate 1 made of a material different from that of the oxide thin film such that the (001) plane is parallel to the main film surface. At this time, the precipitate 3 containing Ba and Cu is deposited in the formed thin film. Next, as shown in FIG. 3B, the precipitate is removed by etching. Then, as shown in FIG. 7C, the (001) plane is parallel to the main film plane on the oxide thin film 2.
An nBa 2 Cu 3 O 7-x oxide thin film 4 is formed.
【００１０】この場合、最初に形成するＬｎＢａ2 Ｃｕ
3 Ｏ7-x 酸化物薄膜２は、形成しようとする最終膜厚よ
りも薄く形成し、析出物３をエッチング除去した後にそ
の最終膜厚に達するまでＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物
薄膜４を形成することが好ましい。In this case, the first formed LnBa 2 Cu
The 3 O 7-x oxide thin film 2 is formed to be thinner than the final film thickness to be formed, and after removing the precipitate 3 by etching, the LnBa 2 Cu 3 O 7-x oxide thin film is obtained until the final film thickness is reached. 4 is preferably formed.
【００１１】例えば、ＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物薄
膜２，４を形成する方法としては蒸着法が採用でき、析
出物をエッチングする方法としてはフッ酸水溶液におけ
るウェットエッチング法が採用できる。また、析出物を
エッチングした後、ＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物薄膜
２の表面をエッチング法により清浄化することが好まし
い。For example, as a method for forming the LnBa 2 Cu 3 O 7-x oxide thin films 2 and 4, a vapor deposition method can be adopted, and as a method for etching the deposits, a wet etching method in a hydrofluoric acid aqueous solution can be adopted. After etching the precipitate, it is preferable to clean the surface of the LnBa 2 Cu 3 O 7-x oxide thin film 2 by an etching method.
【００１２】[0012]
【作用】本発明では、最終膜厚より薄く前記酸化物薄膜
を形成した後、薄膜中に生じた析出物をエッチングする
ことにより、薄膜中の析出物の核を除去されるため、そ
の後にＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物薄膜を再成長する
ことにより、ほぼ基板全面に覆われる酸化物薄膜上には
析出物が形成されず、ＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物の
みが成長する。According to the present invention, the nucleus of the precipitate in the thin film is removed by forming the oxide thin film thinner than the final film thickness and then etching the precipitate formed in the thin film. By re-growing the 2 Cu 3 O 7-x oxide thin film, no precipitate is formed on the oxide thin film almost covering the entire surface of the substrate, and only the LnBa 2 Cu 3 O 7-x oxide grows .
【００１３】また、ＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物は＜
００１＞に垂直な方向に成長し易いため、析出物のエッ
チングされてできた凹部は再成長の際、ＬｎＢａ2 Ｃｕ
3 Ｏ7-x 酸化物により優先的に埋め込まれる。したがっ
て、薄膜中から前記析出物は取り除かれ、その際に生じ
る凹部もＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物により埋め込ま
れるため、前記析出物のない、表面の平坦なＬｎＢａ2
Ｃｕ3 Ｏ7-x 酸化物薄膜が形成される。[0013] The LnBa 2 Cu 3 O 7-x oxide is <
Since it is easy to grow in the direction perpendicular to 001>, the recesses formed by etching the precipitates are regrown with LnBa 2 Cu.
It is preferentially buried by 3 O 7-x oxide. Therefore, the precipitate is removed from the thin film, and the recess formed at that time is also filled with the LnBa 2 Cu 3 O 7-x oxide, so that the LnBa 2 having no precipitate and a flat surface is used.
A Cu 3 O 7-x oxide thin film is formed.
【００１４】[0014]
【実施例】次に、本発明の実施例を説明する。なお、以
下の実施例ではランタノイド元素ＬｎとしてＹ，Ｐｒを
適用した例を示している。Next, embodiments of the present invention will be described. The following embodiment shows an example in which Y and Pr are applied as the lanthanoid element Ln.
【００１５】（実施例１）図１（ａ）を参照して、真空
蒸着槽を１０-6Ｔｏｒｒまでターボ分子ポンプによって
排気した。薄膜を成長させる蒸着基板１として、表面を
研磨したＳｒＴｉＯ3 単結晶を、その表面（１５ｍｍ
φ）が（１００）面となるようにして用い、これをＳｉ
Ｃヒータにより７６０℃まで加熱し、この温度に保持し
た。しかる後、真空蒸着槽内を１０-1Ｔｏｒｒのガス圧
の酸素で満たした。Example 1 Referring to FIG. 1A, the vacuum evaporation tank was evacuated to 10 -6 Torr by a turbo molecular pump. As a deposition substrate 1 for growing a thin film, a SrTiO 3 single crystal having a polished surface
φ) becomes the (100) plane, and this is
It was heated to 760 ° C. by a C heater and kept at this temperature. Thereafter, the inside of the vacuum evaporation tank was filled with oxygen at a gas pressure of 10 -1 Torr.
【００１６】蒸発源にはＹＢａ2 Ｃｕ3 Ｏ7-x 多結晶焼
結体を用い、その表面にＫｒＦエキシマパルスレーザを
集光させて蒸発させ、ＹＢａ2 Ｃｕ3 Ｏ7-x 薄膜を基板
上に蒸着した。蒸着終了後は、１気圧の酸素雰囲気中で
１時間かけて室温まで冷却した。この結果、膜厚５０ｎ
ｍのＹＢａ2 Ｃｕ3 Ｏ7-x 薄膜２を得た。この薄膜の反
射電子線回折像をとり、ＹＢａ2 Ｃｕ3 Ｏ7-x の（００
１）面が膜面に平行をなしてエピタキシャルに成長して
いることを確認した。また、走査型電子顕微鏡により膜
中に析出物３が存在しており、同時に蛍光Ｘ線分析によ
りその析出物３がＢａとＣｕを含んでいることを確認し
た。A YBa 2 Cu 3 O 7-x polycrystal sintered body is used as an evaporation source, and a KrF excimer pulse laser is condensed and evaporated on the surface of the sintered body to deposit a YBa 2 Cu 3 O 7-x thin film on a substrate. Was deposited. After completion of the vapor deposition, the resultant was cooled to room temperature in an oxygen atmosphere at 1 atm over 1 hour. As a result, the film thickness 50n
m YBa 2 Cu 3 O 7-x thin film 2 was obtained. A reflection electron beam diffraction image of this thin film was taken, and (00) of YBa 2 Cu 3 O 7-x was obtained.
1) It was confirmed that the plane was epitaxially grown parallel to the film plane. Further, it was confirmed by a scanning electron microscope that the precipitate 3 was present in the film and, at the same time, the precipitate 3 contained Ba and Cu by X-ray fluorescence analysis.
【００１７】次いで、図１（ｂ）を参照して、得られた
ＹＢａ2 Ｃｕ3 Ｏ7-x の薄膜２を４．９％のフッ酸水溶
液中で１分間超音波洗浄した。その結果、走査型電子顕
微鏡観察により、前記の析出物３のみがエッチング除去
されていることを確認した。次いで、薄膜２の清浄表面
を出すため、薄膜２の表面をＥＤＴＡ飽和水溶液中で３
０秒間超音波洗浄してウェットエッチングし、その後７
０℃の超純水中で２回洗浄した。Then, referring to FIG. 1B, the obtained YBa 2 Cu 3 O 7-x thin film 2 was ultrasonically cleaned in a 4.9% hydrofluoric acid aqueous solution for 1 minute. As a result, it was confirmed by scanning electron microscope observation that only the precipitate 3 was removed by etching. Next, in order to expose the clean surface of the thin film 2, the surface of the thin film 2 was washed with a saturated aqueous solution of EDTA for 3 hours.
Ultrasonic cleaning for 0 second, wet etching, then 7
Washing was performed twice in ultrapure water at 0 ° C.
【００１８】次いで、図１（ｃ）を参照して、同図
（ａ）で説明したのと同様の方法でＹＢａ2 Ｃｕ3 Ｏ
7-x を前記薄膜２上に成長させ、全膜厚が１６０ｎｍの
ＹＢａ2 Ｃｕ3 Ｏ7-x 薄膜４を得た。得られた薄膜４の
反射電子線回折像をとり、この再成長されたＹＢａ2 Ｃ
ｕ3 Ｏ7-x 薄膜４も（００１）面が膜面に平行をなして
エピタキシャル成長していることを確認した。また、走
査型電子顕微鏡観察においては、前記析出物３は観察さ
れなかった。また、原子間力顕微鏡による薄膜表面の観
察により、析出物をエッチングした部分はＹＢａ2 Ｃｕ
3 Ｏ7-x により埋め込まれており、表面が平坦であるこ
とを確認した。Next, referring to FIG. 1C, YBa 2 Cu 3 O is formed in the same manner as described with reference to FIG.
7-x was grown on the thin film 2 to obtain a YBa 2 Cu 3 O 7-x thin film 4 having a total thickness of 160 nm. A reflection electron beam diffraction image of the obtained thin film 4 is taken, and the regrown YBa 2 C
It was confirmed that the u 3 O 7-x thin film 4 was also epitaxially grown with the (001) plane parallel to the film surface. Further, the precipitate 3 was not observed in the scanning electron microscope observation. Further, by observing the surface of the thin film with an atomic force microscope, the part where the precipitate was etched was YBa 2 Cu.
It was confirmed that the surface was flat because it was embedded with 3 O 7-x .
【００１９】（実施例２）この実施例では、析出物をエ
ッチング除去した後に、ＹＢａ2 Ｃｕ3 Ｏ7-x 薄膜２の
清浄表面を出すためにドライエッチング法を用いている
点が実施例１と異なっている。すなわち、実施例１と同
様の方法で膜厚１００ｎｍのＹＢａ2 Ｃｕ3 Ｏ7-x 薄膜
２を得た後、走査型電子顕微鏡により析出物３が存在し
ていることを確認し、次いで、実施例１と同様の方法で
析出物３をエッチングし、走査型電子顕微鏡で確認し
た。そして、加速電圧５００Ｖ、入射角８５°の条件で
５分２０秒アルゴンイオンミリングしてＹＢａ2 Ｃｕ3
Ｏ7-x 薄膜２の表面の清浄化を行っている。さらに、清
浄化したＹＢａ2 Ｃｕ3 Ｏ7-x 薄膜２の表面の結晶性を
回復させるため、１気圧の酸素雰囲気で６００℃、５時
間熱処理を施した。(Embodiment 2) In this embodiment, a dry etching method is used in order to expose a clean surface of the YBa 2 Cu 3 O 7-x thin film 2 after removing a precipitate by etching. Is different. That is, after a YBa 2 Cu 3 O 7-x thin film 2 having a thickness of 100 nm was obtained in the same manner as in Example 1, the presence of the precipitate 3 was confirmed by a scanning electron microscope. Precipitate 3 was etched in the same manner as in Example 1 and confirmed with a scanning electron microscope. Then, argon ion milling was performed for 5 minutes and 20 seconds under the conditions of an acceleration voltage of 500 V and an incident angle of 85 ° to perform YBa 2 Cu 3
The surface of the O 7-x thin film 2 is cleaned. Further, in order to recover the crystallinity of the surface of the purified YBa 2 Cu 3 O 7-x thin film 2, a heat treatment was performed at 600 ° C. for 5 hours in an oxygen atmosphere at 1 atm.
【００２０】次いで、実施例１と同様にＹＢａ2 Ｃｕ3
Ｏ7-x を前記薄膜２上に成長させ、全膜厚が３９０ｎｍ
のＹＢａ2 Ｃｕ3 Ｏ7-x 薄膜４を得た。得られた薄膜４
を走査型電子顕微鏡により観察し、析出物のない薄膜と
なっていることを確認した。また、原子間力顕微鏡によ
る観察により、析出物を選択的にエッチングした部分は
ＹＢａ2 Ｃｕ3 Ｏ7-x により埋め込まれており、表面が
平坦であることを確認した。Then, as in Example 1, YBa 2 Cu 3
O 7-x is grown on the thin film 2 to a total thickness of 390 nm.
YBa 2 Cu 3 O 7-x thin film 4 was obtained. The obtained thin film 4
Was observed with a scanning electron microscope, and it was confirmed that the thin film had no precipitate. Further, by observation with an atomic force microscope, it was confirmed that the portion where the precipitate was selectively etched was filled with YBa 2 Cu 3 O 7-x , and the surface was flat.
【００２１】（実施例３）蒸発源にＰｒＢａ2 Ｃｕ3 Ｏ
7-x 多結晶焼結体を用い、実施例１と同様の方法で膜厚
５０ｎｍのＰｒＢａ2 Ｃｕ3 Ｏ7-x 薄膜２を得た。その
後、走査型電子顕微鏡により析出物３が存在しているこ
とを確認し、ついで実施例１と同様の方法で析出物３を
エッチングし、走査型電子顕微鏡で確認した。次いで、
薄膜２の清浄表面を出すため、薄膜２の表面をＥＤＴＡ
飽和水溶液中で３０秒間超音波洗浄してウェットエッチ
ングし、その後７０℃の超純水中で２回洗浄した。Example 3 PrBa 2 Cu 3 O was used as the evaporation source.
Using a 7-x polycrystalline sintered body, a PrBa 2 Cu 3 O 7-x thin film 2 having a thickness of 50 nm was obtained in the same manner as in Example 1. Thereafter, the presence of the precipitate 3 was confirmed by a scanning electron microscope, and then the precipitate 3 was etched in the same manner as in Example 1 and confirmed by a scanning electron microscope. Then
In order to obtain a clean surface of the thin film 2, the surface of the thin film 2 is EDTA
The substrate was wet-etched by ultrasonic cleaning in a saturated aqueous solution for 30 seconds, and then washed twice in ultrapure water at 70 ° C.
【００２２】次いで、実施例１と同様にＰｒＢａ2 Ｃｕ
3 Ｏ7-x を前記薄膜２上に成長させ、全膜厚が１６０ｎ
ｍのＰｒＢａ2 Ｃｕ3 Ｏ7-x 薄膜４を得た。得られた薄
膜４を走査型電子顕微鏡により観察し、析出物のない薄
膜となっていることを確認した。また、原子間力顕微鏡
による観察により、析出物をエッチングした部分はＰｒ
Ｂａ2 Ｃｕ3 Ｏ7-x により埋め込まれており、表面が平
坦であることを確認した。Next, PrBa 2 Cu was used in the same manner as in Example 1.
3 O 7-x is grown on the thin film 2 and has a total thickness of 160 n.
Thus, a PrBa 2 Cu 3 O 7-x thin film 4 having a thickness of m was obtained. Observation of the obtained thin film 4 with a scanning electron microscope confirmed that it was a thin film having no precipitate. Further, by observation with an atomic force microscope, the portion where the precipitate was etched was Pr
It was confirmed that it was embedded with Ba 2 Cu 3 O 7-x and the surface was flat.
【００２３】なお、前記実施例ではＬｎとしてＹ，Ｐｒ
を用いた例を示しているが、Ｔｂを除くランタノイド元
素の酸化物薄膜を形成する場合にも本発明を同様に適用
できることは言うまでもない。In the above embodiment, Ln is Y, Pr
However, it is needless to say that the present invention can be similarly applied to the case where an oxide thin film of a lanthanoid element other than Tb is formed.
【００２４】[0024]
【発明の効果】以上説明したように、本発明によれば、
ＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物薄膜を形成した後、薄膜
中のＢａとＣｕを含む析出物をエッチングすることによ
り、薄膜中の析出物の核を除去し、その後に薄膜の表面
上にＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物薄膜を再成長してい
るので、最終的に形成される薄膜上には析出物が形成さ
れず、表面の平坦なＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物薄膜
を製造することが可能となる。As described above, according to the present invention,
After forming the LnBa 2 Cu 3 O 7-x oxide thin film, the precipitate containing Ba and Cu in the thin film is etched to remove the nucleus of the precipitate in the thin film, and thereafter, on the surface of the thin film. Since the LnBa 2 Cu 3 O 7-x oxide thin film is regrown, no precipitate is formed on the finally formed thin film, and the LnBa 2 Cu 3 O 7-x oxide has a flat surface. A thin film can be manufactured.
【００２５】特に、ＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物薄膜
を（００１）面が主たる膜面に平行になるように基板上
に形成し、かつ再成長においても（００１）面が主たる
膜面に平行をなしたＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物薄膜
を成長することにより、ＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物
が＜００１＞に垂直な方向に成長し易いため、エッチン
グにより生じた凹部は再成長の際にＬｎＢａ2 Ｃｕ3 Ｏ
7-x 酸化物により優先的に埋め込まれ、表面の平坦化が
実現される。In particular, an LnBa 2 Cu 3 O 7-x oxide thin film is formed on a substrate such that the (001) plane is parallel to the main film plane, and the (001) plane is the main film surface during regrowth. By growing an LnBa 2 Cu 3 O 7-x oxide thin film parallel to the above, the LnBa 2 Cu 3 O 7-x oxide easily grows in the direction perpendicular to <001>, and thus is generated by etching. The recess is formed by LnBa 2 Cu 3 O during regrowth.
It is preferentially buried by the 7-x oxide to achieve a planarized surface.
【００２６】また、再成長の前に先に形成した酸化物薄
膜の表面を清浄することで、再成長する薄膜をエピタキ
シャル成長することが可能となり、エピタキシャル薄膜
を得ることが可能とされる。Further, by cleaning the surface of the previously formed oxide thin film before regrowth, the thin film to be regrown can be epitaxially grown, and an epitaxial thin film can be obtained.
【図１】本発明の製造方法を工程順に示す断面図であ
る。FIG. 1 is a sectional view showing a manufacturing method of the present invention in the order of steps.
１ ＳｒＴｉＯ3 基板 ２ ＹＢａ2 Ｃｕ3 Ｏ7-x 薄膜 ３ ＢａとＣｕを含む析出物 ４ 再成長されたＹＢａ2 Ｃｕ3 Ｏ7-x 薄膜Reference Signs List 1 SrTiO 3 substrate 2 YBa 2 Cu 3 O 7-x thin film 3 Precipitate containing Ba and Cu 4 Regrown YBa 2 Cu 3 O 7-x thin film
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｃ３０Ｂ 29/22 ５０１ 7202−4Ｇ Ｃ３０Ｂ 29/22 ５０１Ｃ // Ｃ２３Ｃ 14/08 Ｃ２３Ｃ 14/08 Ｋ 14/28 14/28 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical indication C30B 29/22 501 7202-4G C30B 29/22 501C // C23C 14/08 C23C 14/08 K 14 / 28 14/28
Claims (4)
ｎはＴｂを除くランタノイド元素またはＹ）を、前記酸
化物薄膜と異なる材料の基板上に（００１）面が主たる
膜面に平行になるように形成する工程と、形成された薄
膜中に析出したＢａとＣｕを含む析出物をエッチング除
去する工程と、さらにその上に（００１）面が主たる膜
面に平行をなしたＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物薄膜を
形成することを特徴とする酸化物薄膜の製造方法。1. An LnBa 2 Cu 3 O 7-x oxide thin film (L
n is a lanthanoid element other than Tb or Y) formed on a substrate made of a material different from that of the oxide thin film such that the (001) plane is parallel to the main film surface, and is deposited in the formed thin film. A step of etching away a precipitate containing Ba and Cu, and further forming a LnBa 2 Cu 3 O 7-x oxide thin film on which a (001) plane is parallel to the main film surface. Method for manufacturing oxide thin film.
成しようとする最終膜厚よりも薄く形成し、析出物をエ
ッチング除去した後に前記最終膜厚に達するまでＬｎＢ
ａ2 Ｃｕ3 Ｏ7-x 酸化物薄膜を再度形成する請求項１の
酸化物薄膜の製造方法。2. An LnBa 2 Cu 3 O 7-x oxide thin film is formed to be thinner than the final film thickness to be formed, and after the precipitate is removed by etching, LnB 2 until reaching the final film thickness.
The method for producing an oxide thin film according to claim 1, wherein the a 2 Cu 3 O 7-x oxide thin film is formed again.
板上に成長し、フッ酸水溶液中において析出物をエッチ
ング除去し、再度ＬｎＢａ2 Ｃｕ3 Ｏ7-x 酸化物薄膜を
成長する請求項１または２の酸化物薄膜の製造方法。3. An LnBa 2 Cu 3 O 7-x oxide thin film is grown on a substrate, precipitates are removed by etching in a hydrofluoric acid aqueous solution, and an LnBa 2 Cu 3 O 7-x oxide thin film is grown again. The method for producing an oxide thin film according to claim 1 or 2.
Ｃｕ3 Ｏ7-x 酸化物薄膜の表面をエッチング法により清
浄化する請求項１ないし３の酸化物薄膜の製造方法。4. After etching the precipitate, the LnBa 2
4. The method for producing an oxide thin film according to claim 1, wherein the surface of the Cu 3 O 7-x oxide thin film is cleaned by an etching method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7198823A JP2760321B2 (en) | 1995-04-15 | 1995-08-03 | Manufacturing method of oxide thin film |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7-113975 | 1995-04-15 | ||
| JP11397595 | 1995-04-15 | ||
| JP7198823A JP2760321B2 (en) | 1995-04-15 | 1995-08-03 | Manufacturing method of oxide thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH093659A true JPH093659A (en) | 1997-01-07 |
| JP2760321B2 JP2760321B2 (en) | 1998-05-28 |
Family
ID=26452833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7198823A Expired - Lifetime JP2760321B2 (en) | 1995-04-15 | 1995-08-03 | Manufacturing method of oxide thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2760321B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014207946A1 (en) * | 2013-06-28 | 2014-12-31 | National Institute Of Advanced Industrial Science And Technology | Surface layer superconductor and fabrication method of the same |
| US10506749B2 (en) | 2014-05-13 | 2019-12-10 | Etel S.A. | Electronic component mounting system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02118063A (en) * | 1988-10-27 | 1990-05-02 | Fujikura Ltd | Production of oxide superconductor |
| JPH02118075A (en) * | 1988-10-27 | 1990-05-02 | Fujikura Ltd | Production of oxide superconductor |
| JPH02118061A (en) * | 1988-10-27 | 1990-05-02 | Fujikura Ltd | Production of oxide superconductor |
-
1995
- 1995-08-03 JP JP7198823A patent/JP2760321B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02118063A (en) * | 1988-10-27 | 1990-05-02 | Fujikura Ltd | Production of oxide superconductor |
| JPH02118075A (en) * | 1988-10-27 | 1990-05-02 | Fujikura Ltd | Production of oxide superconductor |
| JPH02118061A (en) * | 1988-10-27 | 1990-05-02 | Fujikura Ltd | Production of oxide superconductor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014207946A1 (en) * | 2013-06-28 | 2014-12-31 | National Institute Of Advanced Industrial Science And Technology | Surface layer superconductor and fabrication method of the same |
| JP2016531061A (en) * | 2013-06-28 | 2016-10-06 | 国立研究開発法人産業技術総合研究所 | Method for producing surface superconductor and surface superconductor |
| US10506749B2 (en) | 2014-05-13 | 2019-12-10 | Etel S.A. | Electronic component mounting system |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2760321B2 (en) | 1998-05-28 |
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