JPH0940749A - Epoxy resin composition and sealed semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an epoxy resin compsn. excellent in moisture resistance by compounding an epoxy resin represented by a specific formula, a phenol resin, a silicone-based silane coupling agent, a fused silica powder, and a cure accelerator. SOLUTION: A biphenyl epoxy resin represented by formula I, a phenol resin having at least two epoxy-reactive phenolic hydroxyl groups in the molecule, a silicone-based silane coupling agent represented by formula II (X is alkoxysilyl; Y is epoxy, carboxyl, etc.; Z is a polyether group, 2C or higher alkyl, etc.; l and m are each 0, 1, or higher; and n and 0 is 1 or higher), a fused silica powder having a particle size of 100μm or lower, and a cure accelerator (e.g. a phosphorus-based one) are mixed in a specified ratio, melt kneaded with a kneader, etc., and cooled to give an epoxy resin compsn. comprising about 0.01-5wt.% silane coupling agent, 25-90wt.% silica powder, 0.01-5wt.% cure accelerator, and the rest comprising the epoxy resin represented by forpula I and the phenol resin.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to moisture resistance, solder heat resistance,
The present invention relates to an epoxy resin composition excellent in moldability and a semiconductor sealing device.

[0002]

2. Description of the Related Art In recent years, in the field of semiconductor integrated circuits,
At the same time as the development of high integration and high reliability technologies, automation of the mounting process of semiconductor devices has been promoted. For example, when mounting a flat package type semiconductor device on a circuit board, conventionally, soldering is performed for each lead pin, but recently, a solder dipping method or a solder reflow method has been adopted.

[0003]

A semiconductor device sealed with a resin composition comprising a conventional epoxy resin such as a novolak type epoxy resin, a novolak type phenol resin and an inorganic filler is subjected to solder bath immersion of the entire device. There is a disadvantage that the moisture resistance is reduced. In particular, when a semiconductor device that has absorbed moisture is immersed, peeling between the sealing resin and the semiconductor chip, or between the sealing resin and the lead frame, and internal resin cracks occur, causing significant deterioration of moisture resistance. Leakage current occurs, and as a result, the semiconductor device has a disadvantage that long-term reliability cannot be guaranteed.

[0004] Further, by filling the inorganic filler at a high level, the proportion of the resin component is reduced, whereby the resin composition can be made to have a low moisture absorption. There is a disadvantage that the number of interfaces between the resin and the inorganic filler increases, so that the internal resin crack propagates along the interface to the external crack.

The present invention has been made in order to solve the above-mentioned drawbacks, and is less affected by moisture absorption, and is particularly excellent in moisture resistance after solder bath immersion, solder heat resistance, thermal conductivity, moldability, and sealing. No peeling between resin and semiconductor chip or sealing resin and lead frame or generation of internal resin cracks, no wire breakage due to electrode corrosion and no leakage current due to moisture,
It is intended to provide an epoxy resin composition and a semiconductor encapsulation device capable of guaranteeing long-term reliability.

[0006]

Means for Solving the Problems As a result of intensive studies aimed at achieving the above object, the present inventor has found that moisture resistance and solder heat resistance can be improved by using a specific epoxy resin and a specific silane coupling agent. It was found that a resin composition having excellent moldability and the like can be obtained, and the present invention has been completed.

That is, the present invention provides (A) an epoxy resin represented by the following formula:

[0008]

Embedded image (B) phenol resin, (C) silicone-based silane coupling agent represented by the following general formula,

[0009]

[Chemical 6] (Wherein X is an alkoxysilyl-containing group, Y is a reactive organic functional group of an epoxy-containing group, a carboxyl-containing group, or a carbinol-containing group, Z is a polyether group, an alkyl group having 2 or more carbon atoms, Or a unit which is an aralkyl group for enhancing compatibility with an organic substance, m and p are 0 or an integer of 1 or more, and n and o are integers of 1 or more, respectively.) (D) The maximum particle size is A fused silica powder of 100 μm or less and (E) a curing accelerator are essential components, and the fused silica powder of (D) is contained in a proportion of 25 to 90% by weight with respect to the entire resin composition. It is a characteristic epoxy resin composition. A semiconductor sealing device is characterized in that a semiconductor chip is sealed with a cured product of the epoxy resin composition.

Hereinafter, the present invention will be described in detail.

As the epoxy resin (A) used in the present invention, those represented by the above formula (5) are used, and are particularly excellent in moisture resistance, solder heat resistance, moldability and the like. Further, a novolac-based epoxy resin, an epibis-based epoxy resin, and other generally known epoxy resins can be used in combination with this epoxy resin.

The phenolic resin (B) used in the present invention is not particularly limited as long as it has two or more phenolic hydroxyl groups in the molecule that can react with the epoxy group of the epoxy resin (A). Absent. As a specific compound, for example,

[0013]

[Chemical 7] (However, n represents 0 or an integer of 1 or more)

[0014]

Embedded image (However, n represents 0 or an integer of 1 or more)

[0015]

Embedded image (However, n represents 0 or an integer of 1 or more)

[0016]

Embedded image (However, n represents 0 or an integer of 1 or more)

[0017]

Embedded image (Where n represents 0 or an integer of 1 or more), and these can be used alone or as a mixture of two or more.

As the silicone type silane coupling agent (C) used in the present invention, those represented by the above general formula 6 are used. Specifically, for example,

[0019]

[Chemical 12]

[0020]

Embedded image (However, in the formula, a and b each represent an integer of 10 or less)
And the like, and these can be used alone or as a mixture. It is desirable that the silane coupling agent be blended in an amount of 0.01 to 5% by weight based on the total resin composition. If the blending ratio is less than 0.01% by weight, the mechanical strength is not improved, so that the moisture resistance after solder dipping is poor, and if it exceeds 5% by weight, resin burrs are liable to appear, which is not preferable because of poor moldability.

The fused silica powder (D) used in the present invention has a low impurity concentration and a maximum particle size of 100 μm or less and an average particle size of 30 μm or less. If the average particle size exceeds 30 μm, the moisture resistance and moldability are poor, which is not preferable. The blending ratio of fused silica powder is 25 with respect to the total resin composition.
It is preferable to mix such that the content is 90% by weight. If the proportion is less than 25% by weight, the hygroscopicity of the resin composition is high,
Moisture resistance after immersion in solder is poor, and when it exceeds 90% by weight, fluidity is extremely deteriorated and moldability is poor, which is not preferable.

The (E) curing accelerator used in the present invention includes a phosphorus-based curing accelerator, an imidazole-based curing accelerator, and D
BU-based curing accelerators and other curing accelerators can be widely used. These can be used alone or in combination of two or more. It is desirable that the curing accelerator is blended in an amount of 0.01 to 5% by weight based on the total resin composition. If the proportion is less than 0.01% by weight, the gel time of the resin composition will be long and the curing characteristics will be poor.
If it exceeds 5% by weight, the fluidity is extremely deteriorated, the moldability is deteriorated, the electric characteristics are deteriorated, and the moisture resistance is deteriorated, which is not preferable.

The epoxy resin composition of the present invention contains the above-mentioned specific epoxy resin, phenolic resin, specific silane coupling agent, fused silica powder and curing accelerator as essential components, but does not violate the object of the present invention. At the limit,
Further, if necessary, for example, natural waxes, synthetic waxes, metal salts of linear fatty acids, acid amides, esters, release agents such as paraffin, flame retardants such as antimony trioxide, colorants such as carbon black, A rubber-based or silicone-based low stress imparting agent and the like can be appropriately added and blended.

The general method for preparing the epoxy resin composition of the present invention as a molding material is as follows: the specific epoxy resin, the phenol resin, the specific silane coupling agent, the fused silica powder and the curing accelerator and other components. Can be blended and sufficiently homogenously mixed by a mixer or the like, and further melt-mixed by a hot roll or mixed by a kneader or the like, then cooled and solidified and pulverized to an appropriate size to obtain a molding material. In this case, the fused silica powder may be treated with a silane coupling agent in advance. When the molding material thus obtained is applied to sealing, covering, insulating, etc. of electronic parts or electric parts including semiconductor devices, excellent properties and reliability can be imparted.

Further, the semiconductor sealing device of the present invention can be easily manufactured by sealing a semiconductor chip using the molding material described above. The semiconductor chip to be sealed is not particularly limited to, for example, an integrated circuit, a large scale integrated circuit, a transistor, a thyristor, a diode and the like. The most common sealing method is a low pressure transfer molding method, but sealing by injection molding, compression molding, casting, or the like is also possible. After sealing with a molding material, it is heated and cured, and finally a semiconductor sealing device sealed with this cured product is obtained. The curing by heating is desirably performed by heating to 150 ° C. or more.

[0026]

The epoxy resin composition and semiconductor encapsulation device of the present invention can achieve the intended purpose by using a specific epoxy resin and a specific silane coupling agent. That is, a silicone-based coupling agent having a unit having a reactivity with an inorganic substance in one molecule, a unit having a high reactivity with an organic substance, and a unit for enhancing compatibility with an organic substance as necessary, is specified. By using it for the epoxy resin of, the interfacial strength between the organic substance and the inorganic substance is improved, the water absorption of the resin composition is reduced, and the moldability, fluidity, mechanical properties and low stress are improved,
The generation of resin cracks after solder immersion and solder reflow is eliminated, and the deterioration of moisture resistance is reduced.

[0027]

Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. In the following examples and comparative examples, “%” means “% by weight”.

Example 1 Fused silica powder having a maximum particle size of 100 μm or less (average particle size 20 μm
m or less) 84% was put in a Hensil mixer, and 0.4% of the silane coupling agent of the above Chemical formula 12 was added with stirring to surface-treat the above silica powder.

Next, 6.2% of the biphenyl type epoxy resin shown in Chemical formula 5, 1.5% of the tetrabromobisphenol A type epoxy resin, 1.5% of the phenolic resin of Chemical formula 7 above, 3.5% of the phenolic resin of Chemical formula 8 above, and triphenylphosphine.
0.2%, carnauba wax 0.4%, carbon black
0.3% and antimony trioxide 2.0% were mixed at room temperature, further kneaded and cooled at 90 to 100 ° C., and then pulverized to produce a molding material (A).

Example 2 Fused silica powder having a maximum particle size of 100 μm or less (average particle size 20 μm
m or less) 84% was put in a Hensil mixer, and 0.4% of the silane coupling agent of the above Chemical formula 12 was added with stirring to surface-treat the above silica powder.

Next, 6.2% of the biphenyl type epoxy resin shown in Chemical formula 5, 1.5% of the tetrabromobisphenol A type epoxy resin, 1.5% of the phenolic resin of Chemical formula 7 above, 3.5% of the phenolic resin of Chemical formula 9 above, and triphenylphosphine.
0.2%, carnauba wax 0.4%, carbon black
0.3% and antimony trioxide 2.0% were mixed at room temperature, further kneaded and cooled at 90 to 100 ° C., and then pulverized to produce a molding material (B).

Example 3 Fused silica powder having a maximum particle size of 100 μm or less (average particle size 20 μm
m or less) 84% was placed in a Hensil mixer, and 0.4% of the silane coupling agent of the above-mentioned chemical formula 13 was added with stirring to surface-treat the silica powder.

Next, 6.2% of the biphenyl type epoxy resin shown in Chemical formula 5, 1.5% of the tetrabromobisphenol A type epoxy resin, 1.5% of the phenolic resin of Chemical formula 7 above, 3.5% of the phenolic resin of Chemical formula 8 above, and triphenylphosphine.
0.2%, carnauba wax 0.4%, carbon black
0.3% and antimony trioxide 2.0% were mixed at room temperature, further kneaded and cooled at 90 to 100 ° C., and then pulverized to produce a molding material (C).

Comparative Example 1 Fused silica powder having a maximum particle size of 100 μm or less (average particle size 20 μm
m or less) 84% was put in a Hensil mixer, and 0.4% of the silane coupling agent of the above Chemical formula 12 was added with stirring to surface-treat the above silica powder.

Next, tetrabromobisphenol A type epoxy resin 2.0%, o-cresol novolac epoxy resin
8.1%, 2.0% phenol resin of Chemical formula 7 above, 4.6% of phenol resin of Chemical formula 8 above, triphenylphosphine
0.2%, carnauba wax 0.4%, carbon black
0.3% and antimony trioxide 2.0% were mixed at room temperature, further kneaded and cooled at 90 to 100 ° C., and then pulverized to produce a molding material (D).

Comparative Example 2 Fused silica powder having a maximum particle size of 100 μm or less (average particle size 20 μm
m or less) 84% was placed in a Hensil mixer, and 0.4% of the silane coupling agent of the above-mentioned chemical formula 13 was added with stirring to surface-treat the silica powder.

Next, tetrabromobisphenol A type epoxy resin 1.5%, o-cresol novolac epoxy resin
6.2%, 1.5% of the above-mentioned phenol resin of 1.5%, 3.5% of the above-mentioned phenol resin of 3.5%, triphenylphosphine
0.2%, carnauba wax 0.4%, carbon black
0.3% and antimony trioxide 2.0% were mixed at room temperature, further kneaded and cooled at 90 to 100 ° C., and then pulverized to produce a molding material (E).

Comparative Example 3 Fused silica powder having a maximum particle size of 100 μm or less (average particle size 20 μm
m or less) 84% was placed in a Hensil mixer, and 0.4% of an epoxyalkylsilane coupling agent was added with stirring to surface-treat the silica powder.

Next, 6.2% of the biphenyl type epoxy resin shown in Chemical formula 5, 1.5% of the tetrabromobisphenol A type epoxy resin, 1.5% of the phenolic resin of Chemical formula 7 above, 3.5% of the phenolic resin of Chemical formula 8 above, and triphenylphosphine.
0.2%, carnauba wax 0.4%, carbon black
0.3% and antimony trioxide 2.0% were mixed at room temperature, further kneaded and cooled at 90 to 100 ° C., and then pulverized to produce a molding material (F).

Molding materials (A) to (F) thus produced
Was used to transfer transfer into a mold heated to 170 ° C., and the semiconductor chip was sealed and cured to manufacture a semiconductor sealing device. Various tests were performed on these semiconductor sealing devices, and the results are shown in Table 1. The epoxy resin composition and the semiconductor sealing device of the present invention are excellent in moisture resistance, solder heat resistance, and moldability. Thus, a remarkable effect of the present invention could be confirmed.

[0041]

[Table 1] * 1: Spiral flow measurement was performed according to EMMI-I-66. (175 ° C). * 2: Koka type flow viscosity (175 ° C). * 3: A molded product (test piece) was prepared by transfer molding at 175 ° C, 80 kg / cm ² for 2 minutes, post-cured at 175 ° C for 8 hours, and tested according to JIS-K-6911. * 4: A molded article similar to * 3 was prepared, post-cured at 175 ° C for 8 hours, a test piece of appropriate size was measured using a thermomechanical analyzer. * 5: * 6: A 5.3 x 5.3 mm chip is placed in a VQFP (12 x 12 x 1.4 mm) package, transfer molded using a molding material at 175 ° C for 2 minutes, and post-cured at 175 ° C for 8 hours. Was done. The semiconductor encapsulation device thus obtained was subjected to a moisture absorption treatment at 85 ° C. and 85% for 48 hours, and then calculated based on the increased weight. In addition, this was passed through an air refromasin (Max 240 ° C) to check for external and internal cracks.

[0042]

As is clear from the above description and Table 1, the epoxy resin composition and the semiconductor encapsulation device of the present invention are excellent in moisture resistance, solder heat resistance and moldability, and can be used for filling thin packages. It is also excellent in properties, is little affected by moisture absorption, can significantly reduce the occurrence of wire breakage due to corrosion of electrodes and the generation of leak current due to water, and can guarantee reliability for a long period of time.

Continuation of front page (51) Int.Cl. ⁶ Identification number Office reference number FI technical display location H01L 23/31

Claims (2)

[Claims] 1. An epoxy resin represented by the following formula (A): (B) Phenolic resin, (C) Silicone type silane coupling agent represented by the following general formula, (Wherein X is an alkoxysilyl-containing group, Y is a reactive organic functional group of an epoxy-containing group, a carboxyl-containing group, or a carbinol-containing group, Z is a polyether group, an alkyl group having 2 or more carbon atoms, Or a unit which is an aralkyl group for enhancing compatibility with an organic substance, m and p are 0 or an integer of 1 or more, and n and o are integers of 1 or more, respectively) (D) Maximum particle size 100 A fused silica powder having a size of less than or equal to μm and (E) a curing accelerator are essential components, and the fused silica powder of (D) is contained in a proportion of 25 to 90% by weight with respect to the entire resin composition. And an epoxy resin composition. 2. An epoxy resin represented by the following formula (A): embedded image (B) Phenolic resin, (C) Silicone silane coupling agent represented by the following general formula: (Wherein X is an alkoxysilyl-containing group, Y is a reactive organic functional group of an epoxy-containing group, a carboxyl-containing group, or a carbinol-containing group, Z is a polyether group, an alkyl group having 2 or more carbon atoms, Or a unit which is an aralkyl group for enhancing compatibility with an organic substance, m and p are 0 or an integer of 1 or more, and n and o are integers of 1 or more, respectively.) (D) The maximum particle size is An epoxy resin composition containing 100 to 100 μm or less of fused silica powder and (E) a curing accelerator as essential components, and containing 25 to 90% by weight of the fused silica powder of (D) with respect to the entire resin composition. A semiconductor encapsulation device, wherein a semiconductor chip is encapsulated with the cured product of.