JPH0943832A - Exposure mask for oblique incidence - Google Patents
Exposure mask for oblique incidenceInfo
- Publication number
- JPH0943832A JPH0943832A JP8108772A JP10877296A JPH0943832A JP H0943832 A JPH0943832 A JP H0943832A JP 8108772 A JP8108772 A JP 8108772A JP 10877296 A JP10877296 A JP 10877296A JP H0943832 A JPH0943832 A JP H0943832A
- Authority
- JP
- Japan
- Prior art keywords
- exposure mask
- pattern
- space
- size
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims abstract description 20
- 230000000903 blocking effect Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 claims description 2
- 238000009304 pastoral farming Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/701—Off-axis setting using an aperture
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【産業上の利用分野】本発明は半導体製造工程中、リソ
グラフィー（ｌｉｔｈｏｇｒａｐｈｙ）工程に用いられ
る露光マスクのうち、斜入射（ｏｆｆ−ａｘｉｓ ｉｌ
ｌｕｍｉｎａｔｉｏｎ）用露光マスク（ｒａｔｉｃｌ
ｅ）に関し、特に一つの露光マスク上に種々な大きさの
パターン等が形成されている場合、焦点深度（ｄｅｐｔ
ｈ ｏｆｆｏｃｕｓ）が下がるある程度以上の大きさを
有するスペースに別途の補助パターン等を添加して他の
部分と同じ焦点深度を有するよう工程余裕度を増加さ
せ、工程収率及び素子動作の信頼性を向上させることが
できる半導体素子用露光マスクに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an off-axis illumination mask used in a lithography process in a semiconductor manufacturing process.
Lumination) exposure mask (raticl)
Regarding e), especially when patterns of various sizes are formed on one exposure mask, the depth of focus (dept
By adding a separate auxiliary pattern or the like to a space having a certain size or more in which h.sub.office is reduced, a process margin is increased so as to have the same depth of focus as other portions, and a process yield and device operation reliability are improved. The present invention relates to a semiconductor device exposure mask that can be improved.
【従来の技術】一般的な感光膜パターン形成技術は露光
装置の精度、光の波長等のような数多い制約要因により
ある程度以下の微細パターンを形成することができな
い。例えば、用いられる光波長がそれぞれ４３６、３６
５及び２４８ｎｍであるＧ−ライン、ｉ−ライン及びＫ
ｒＦアクシマレーザを光源に用いる縮小露光装置の工程
分解能は、約０．７μｍ、０．５μｍ、０．３μｍ程度
の大きさのライン／スペースを形成する程度が限界であ
る。さらに、前記のように縮小露光装置（ｓｔｅｐｐｅ
ｒ）の光分解能限界値以下の微細パターンを形成するた
め露光装置の光波長を短くしてＸ−線縮小露光装置を用
いたり、レンズ口径及び装備の精度を増加させ、露光マ
スクで位相反転マスクを用いたりする。図１及び図２に
示したように、従来では透明基板（５）上に光遮断膜パ
ターン（１）等が形成されている露光マスク（１）上に
垂直入射される光（４）が幅が夫々１′、１である露光
マスクの微細パターン（２）、（３）を通過した後、対
物レンズ（ｐｒｏｊｅｃｔｉｏｎ ｌｅｎｓ）を透過し
てウェーハ上にイメージ像を形成する。しかし、前記の
ような垂直入射方式は光が露光マスクのパターンの間の
スリットを過ぎる際、微細なパターンの影響で光に回折
して０次光（７）及び１次光（６）に大きく分離され
る。ここで、スリット間隔が大きいパターン（２）は殆
ど０次光であり、回折角がθ１で比較的小さい１次光で
あり、微細なパターン（３）は比較的大きい回折角θ２
である±１次光の強さが増加され、対物レンズの曲率半
径と焦点距離により０次光（７）と±１次光（６）の間
には光経路（ｏｐｔｉｃａｌ ｐａｔｈ）差が発生して
イメージコントラストを下げる問題点がある。このよう
な問題点を解決するため回折された光の±１次光のう
ち、いずれか一つを除去するため縮小露光装置に変形照
明器具（ｍｏｄｉｆｉｅｄ ｉｌｌｕｍｉｎａｔｉｏｎ
ａｐｅｒｔｕｒｅ）を取り付ける斜入射露光方法を用い
る。前記の斜入射露光法は図３に示しているように、垂
直入射された光（１０）が変形照明器具（１２）の斜入
射ホール（１１）を通過して露光マスク（１３）に傾斜
入射され、光が露光マスク（１３）を通過した光はパタ
ーンイメージを有し回折により０次光（７）と±１次光
（６）、（１４）に分かれる。その次に、光遮断器具
（１５）を通過する際、±１次光（１４）の中のいずれ
か一つが除去され、対物レンズ（１６）を通過してウェ
ーハ（１７）にイメージを形成する。この際、対物レン
ズ（１５）の曲率半径を中心に０次光（７）と±１次光
（６）の中のいずれか一つの光との光経路差がなくなり
工程マジンを向上させる。前記のような従来技術に伴う
斜入射露光工程は図４に示しているように、入射光が０
次光及び±１次光に分かれる適当な大きさの微細パター
ン（Ｓ１）の場合にはイメージコントラストが向上する
が、パターン間のスペースが大きいパターン（Ｓ２）の
場合には入射光の回折による分離が起こらず、±１次光
全てが対物レンズを通過するようになり、ウェーハ上に
露光する光の強度が他の部分と差が生じることになり１
８のように却って焦点深度が下がる問題点がある。2. Description of the Related Art A general photosensitive film pattern forming technique cannot form a fine pattern to a certain degree or less due to a number of limiting factors such as the accuracy of an exposure apparatus and the wavelength of light. For example, the light wavelengths used are 436 and 36, respectively.
G-line, i-line and K at 5 and 248 nm
The process resolution of a reduction exposure apparatus using an rF axima laser as a light source is limited to the extent that lines / spaces of about 0.7 μm, 0.5 μm, and 0.3 μm are formed. Further, as described above, the reduction exposure apparatus (steppe)
r) Use an X-ray reduction exposure apparatus by shortening the light wavelength of the exposure apparatus to form a fine pattern smaller than the optical resolution limit value of r), or increase the lens aperture and the precision of the equipment, and use a phase inversion mask with an exposure mask. Or use. As shown in FIGS. 1 and 2, the light (4) vertically incident on an exposure mask (1) in which a light-shielding film pattern (1) and the like are formed on a transparent substrate (5) in the past, has a width. After passing through fine patterns (2) and (3) of the exposure mask, which are 1 'and 1 respectively, an image image is formed on the wafer through an objective lens (projection lens). However, when the light passes through the slits between the patterns of the exposure mask, the light is diffracted into light by the influence of the fine pattern and is largely converted into zero-order light (7) and primary light (6). Separated. Here, the pattern (2) having a large slit interval is almost zero-order light, the primary light having a relatively small diffraction angle θ 1 , and the fine pattern (3) is a relatively large diffraction angle θ 2.
Is increased, and an optical path difference occurs between the 0th order light (7) and the ± 1st order light (6) due to the radius of curvature and the focal length of the objective lens. There is a problem that the image contrast is reduced. In order to solve such a problem, a modified illumination device is used in a reduction exposure apparatus to remove one of ± 1st-order lights of diffracted light.
An oblique incidence exposure method to attach an aperture is used. In the above oblique incidence exposure method, as shown in FIG. 3, the vertically incident light (10) passes through the oblique incidence hole (11) of the modified illuminator (12) and obliquely enters the exposure mask (13). The light that has passed through the exposure mask (13) has a pattern image and is divided into zero-order light (7) and ± first-order lights (6) and (14) by diffraction. Then, when passing through the light blocking device (15), any one of the ± primary lights (14) is removed and passes through the objective lens (16) to form an image on the wafer (17). . At this time, the optical path difference between the zero-order light (7) and any one of the ± first-order lights (6) around the radius of curvature of the objective lens (15) is eliminated, and the process margin is improved. In the oblique incidence exposure process according to the prior art as described above, as shown in FIG.
The image contrast is improved in the case of a fine pattern (S1) of an appropriate size that is divided into the secondary light and the ± first-order light, but the incident light is separated by diffraction in the case of the pattern (S2) in which the space between the patterns is large. Does not occur, all the ± 1st order light passes through the objective lens, and the intensity of the light exposed on the wafer becomes different from that of other parts.
As shown in FIG. 8, there is a problem that the depth of focus is rather lowered.
【発明が解決しようとする課題】本発明は前記のような
問題点を解決するためのものであり、本発明の目的は、
焦点深度が最適なパターンより大きいスペースを有する
パターンのスペース部分に別途の補助パターンを添付し
最大の焦点深度を有するようにしてイメージコントラス
トを増加させ、微細パターン形成が容易であり工程余裕
度を増加させて工程収率及び素子動作の信頼性を向上さ
せることができる斜入射用露光マスクを提供することに
ある。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide:
A separate auxiliary pattern is attached to the space portion of the pattern that has a larger depth of focus than the optimal pattern to increase the image contrast by having the maximum depth of focus, making it easier to form fine patterns and increasing the process margin. Accordingly, it is an object of the present invention to provide an oblique incidence exposure mask capable of improving the process yield and the reliability of device operation.
【課題を解決するための手段】前記のような目的を達成
するための本発明に伴う斜入射用露光マスクの特徴は、
種々なスペースを有する光遮断膜パターン等が透明基板
上に形成されている斜入射用露光マスクにおいて、前記
光遮断膜パターン等のうちの最少スペースを有するパタ
ーンよりスペースが大きいパターンに対し、スペースの
内側に光分解能より小さな大きさの多数個の補助パター
ンを備えることにある。The features of the oblique incidence exposure mask according to the present invention for achieving the above object are as follows.
In an oblique incidence exposure mask in which a light blocking film pattern or the like having various spaces is formed on a transparent substrate, a pattern having a larger space than a pattern having a minimum space among the light blocking film patterns or the like has a smaller space. The object is to provide a plurality of auxiliary patterns having a size smaller than the optical resolution inside.
【実施例】以下、本発明に伴う斜入射用露光マスクに関
し、添付図面を参照して詳細に説明する。図５及び図６
は、本発明に件う斜入射用露光マスクを説明するための
図面等で、多様な形態の補助パターンを備えた例とし
て、相互連関させ説明する。先ず、石英等の透明基板
（５）上に多様な大きさのスペースを有するクロムパタ
ーンでなる光遮断膜パターン（１）が形成されており、
最大の焦点深度を有するスペース大きさ（１６ ）のパタ
ーン（３）より大きいスペース（１１＋１２＋１３、１
４＋１５ ）を有するパターン（２）、例えぱｉラインの
場合０．４〜１．０μｍ程度の大きさのスペースにドッ
ト状や突起状の補助パターン（９）、（８）等が形成さ
れている。前記補助パターン（８）、（９）等の大きさ
（１２ ）、（１４ ）は夫々ウェーハ上にイメージを形成
しない程度の大きさ、例えばｉライン露光の場合、ウェ
ーハ上に照射されるイメージの大きさが一辺が０．１〜
０，３μｍを過ぎない程度の大きさに形成し、前記補助
パターン等（８）、（９）はスペースの一側又は、両側
に交互に配置し枝葉的なスペース（１３ ）が最大焦点深
度を有するスペース大きさ（１６）と相似する程度の大
きを有するようにする。具体的に縮小露光装置の光波長
λに対し前記補助パターン等（８）、（９）の小さい幅
が約λの１／２〜４倍程度以下の大きさに設定する。さ
らに、好ましくは１１ と１２ を同様の大きさになるよう
にする。前記で突起状の補助パターン（８）と塗布状の
補助パターン（９）を一つのスペースに共に用いること
も可能であり、塗布状の補助パターン（９）は交互に配
置された２列を示したが、非常に大きいスペースを有す
るパターンの場合には多数列の塗布パターンを形成する
こともできる。前記のような補助パターン等（８）、
（９）を備える露光マスクは、図４に太い線（１９）で
示すように種々な大きさのスペース等が全て同じ焦点深
度を有する。前記ではライン／スペースパターンを例に
挙げたが、フィルド酸化膜パターンや、メモリ領域と周
辺回路領域に亘って形成される全ての形態のパターン等
に適用することができる。例えば、斜入射用露光マスク
がコンタクトホールマスクである場合、前記の補助パタ
ーン等をコンタクトホールの内側に形成するがその大き
さは前述した条件に従う。尚、前記補助パターン等は位
相反転物質や、ＳＯＧ、窒化膜、ＴｉＮ、硬化された感
光膜又は、透過率１〜１０％程度の半透明物質を用い
る。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing an oblique incidence exposure mask according to the present invention. 5 and 6
Are drawings for explaining the oblique incidence exposure mask according to the present invention, and are described in association with each other as an example having various forms of auxiliary patterns. First, a light blocking film pattern (1) made of a chromium pattern having spaces of various sizes is formed on a transparent substrate (5) such as quartz.
Space size having a maximum depth of focus pattern (1 6) (3) is greater than the space (1 1 +1 2 +1 3, 1
4 + 15 ), for example, in the case of the i-line, dot-shaped or protruded auxiliary patterns (9) and (8) are formed in a space having a size of about 0.4 to 1.0 μm. ing. It said auxiliary pattern (8) is irradiated (9) size (1 2) such as, (1 4) is large enough not to form an image on each wafer, for example, in the case of i-line exposure, on the wafer The size of the image is 0.1 ~ on one side
Formed in a size that only the 0,3Myuemu, the auxiliary pattern, etc. (8), (9) one side or, foliage specific space arranged alternately on both sides (1 3) is the maximum depth of focus space Has a size similar to the space size (1 6 ) having. Specifically, the small width of the auxiliary patterns (8) and (9) is set to a size of about 1/2 to 4 times or less of λ with respect to the light wavelength λ of the reduction exposure apparatus. More preferably set to be a similar size to 1 1 and 1 2. It is also possible to use the projecting auxiliary pattern (8) and the coating auxiliary pattern (9) together in one space, and the coating auxiliary pattern (9) shows two rows arranged alternately. However, in the case of a pattern having a very large space, a multi-row application pattern can be formed. (8) such as the auxiliary pattern,
In the exposure mask provided with (9), as shown by the thick line (19) in FIG. 4, spaces of various sizes have the same depth of focus. Although the line / space pattern has been described above as an example, the present invention can be applied to a filled oxide film pattern and all types of patterns formed over a memory region and a peripheral circuit region. For example, when the oblique incidence exposure mask is a contact hole mask, the above-mentioned auxiliary pattern and the like are formed inside the contact hole, and the size thereof is in accordance with the conditions described above. The auxiliary pattern or the like uses a phase inversion material, SOG, nitride film, TiN, a hardened photosensitive film, or a translucent material having a transmittance of about 1 to 10%.
【発明の効果】以上で説明したように、本発明に伴う斜
入射用露光マスクは多様な大きさのスペースが一つの露
光マスクに形成される場合、最大の焦点深度（ｆｏｃｕ
ｓｌａｔｉｔｕｄｅ ｍａｒｇｉｎ）を有するスペース
パターンの大きさより、斜入射露光に不適切な大きいス
ペースを有するスペースパターンでマスク全体の回折角
が同じか、類似させるため補助パターン等を形成する
が、前記補助パターンはウェーハ上にイメージを形成し
ない程度の大きさを有する突起又は、ドット状を反復配
列させ枝葉的なスペースの大きさが最大焦点深度を有す
るようスペースの大きさと近似させ、大きいスペースで
形成される小さいポーカス工程マージンを小さいスペー
スパターンでの大きいポーカス工程マージンのように有
するようにし．て半導体素子形成の工程余裕度が均一に
大きくなり、パターンの不均一性も改善され、素子動作
の信頼性及び工程収率を向上させることができる利点を
有する。As described above, the oblique incidence exposure mask according to the present invention has the maximum depth of focus (focu) when variously sized spaces are formed in one exposure mask.
Due to the size of the space pattern having a slit margin, an auxiliary pattern or the like is formed in order to make the diffraction angle of the entire mask the same or similar in a space pattern having a large space unsuitable for oblique incidence exposure. A small pocus formed in a large space, with protrusions or dots having a size that does not form an image on the top, which are repeatedly arranged in a dot-like manner so that the size of the leaf-like space has a maximum depth of focus and approximates the size of the space Process margin should be like large pocus process margin with small space pattern. As a result, the process margin for forming a semiconductor device is uniformly increased, the non-uniformity of the pattern is also improved, and the reliability of the device operation and the process yield can be improved.
図１は、従来技術に伴う斜入射用露光マスクの平面図。
図２は、図１での線Ａ−Ａ′に伴う断面図。図３は、斜
入射露光工程を説明するための斜入射露光装置の概略
図。図４は、斜入射露光でパターンのスペースの大きさ
に対する焦点深度グラフ。図５は、本発明に伴う斜入射
用露光マスクの平面図。図６は、図５での線Ｂ−Ｂ′に
伴う断面図。FIG. 1 is a plan view of an oblique incidence exposure mask according to the related art.
FIG. 2 is a sectional view taken along the line AA 'in FIG. FIG. 3 is a schematic view of an oblique incidence exposure apparatus for explaining an oblique incidence exposure step. FIG. 4 is a graph showing the depth of focus with respect to the size of the pattern space in oblique incidence exposure. FIG. 5 is a plan view of an oblique incidence exposure mask according to the present invention. FIG. 6 is a sectional view taken along line BB ′ in FIG. 5.
１：光遮断膜パターン ２：大きい
スペースパターン ３：最小スペースパターン ４：斜入射
光 ５：透明基板 ６、１４：
±１次光 ７：０次光 ８：突起型
補助パターン ９：ドット型補助パターン １０：垂直
入射光 １１：斜入射ホール １２：変形
照明器具 １３；露光マスク １５：光遮
断器具 １６：対物レンズ １７：ウェ
ーハ １８：従来斜入射用露光マスクのグラフ １９：本発明に伴う斜入射用露光マスクのグラフ1: light blocking film pattern 2: large space pattern 3: minimum space pattern 4: oblique incident light 5: transparent substrate 6, 14:
± 1st-order light 7: 0th-order light 8: projection-type auxiliary pattern 9: dot-type auxiliary pattern 10: normal incident light 11: oblique incidence hole 12: deformed illumination device 13; exposure mask 15: light blocking device 16: objective lens 17 : Wafer 18: Graph of conventional oblique incidence exposure mask 19: Graph of oblique incidence exposure mask according to the present invention
Claims (7)
等が透明基板上に形成されている斜入射用露光マスクに
おいて、 前記光遮断膜パターン等の中、最小スペースを有するパ
ターンよりスペースの大きいパターンに対し、スペース
の内側にパターン形成ができない小さな大ささの多数個
の補助パターンを備えて同様な大きさのスペース幅を有
するようにする斜入射用露光マスク。1. A grazing incidence exposure mask having a light blocking film pattern having various spaces formed on a transparent substrate, wherein the light blocking film pattern has a larger space than the pattern having the smallest space. On the other hand, an oblique-incidence exposure mask that has a plurality of auxiliary patterns each having a small size that cannot be patterned inside the space and has a space width of the same size.
で、その大きさが露光源の波長λに比べ１／２乃至５倍
の大きさ以内にすることを特徴とする請求項１記載の斜
入射用露光マスク。2. The method according to claim 1, wherein the size of the auxiliary pattern is set to be less than 1/2 to 5 times the wavelength λ of the exposure source on the exposure mask. An oblique incidence exposure mask.
大きさはｉラインの場合、０．４〜１．０μｍであるこ
とを特徴とする請求項１記載の斜入射用露光マスク。3. The oblique-incidence exposure mask according to claim 1, wherein the size of the space requiring the auxiliary pattern is 0.4 to 1.0 μm in the case of the i-line.
ット状であることを特徴とする請求項１記載の斜入射用
露光マスク。4. The exposure mask for oblique incidence according to claim 1, wherein the auxiliary pattern is in the form of protrusions or dots forming rows.
ることを特徴とする請求項１記載の斜入射用露光マス
ク。5. The oblique-incidence exposure mask according to claim 1, wherein the auxiliary pattern is in the form of dots in multiple rows.
Ｇ、窒化膜、ＴｉＮ、硬化した感光膜及び透過率１〜１
０％の半透明物質でなる群で任意に選択される一つの物
質で形成され露光光の強さを大きくし、回折角を保持す
るようにすることを特徴とする請求項１記載の斜入射用
露光マスク。6. The auxiliary pattern comprises a phase inversion material, SO
G, nitride film, TiN, cured photosensitive film and transmittance 1 to 1
The oblique incidence according to claim 1, characterized in that it is made of one material arbitrarily selected from the group consisting of 0% translucent material to increase the intensity of exposure light and maintain the diffraction angle. Exposure mask.
ルマスクの場合、ライン／スペースパターンのように所
定の回折角を成し補助パターン等がコンタクトホールの
内側エッジ部分に形成されていることを特徴とする請求
項１記載の斜入射用露光マスク。7. When the exposure mask for oblique incidence is a contact hole mask, a predetermined diffraction angle is formed like a line / space pattern and an auxiliary pattern or the like is formed on an inner edge portion of the contact hole. The exposure mask for oblique incidence according to claim 1.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950006327A KR100190762B1 (en) | 1995-03-24 | 1995-03-24 | Exposure mask |
| KR95-6327 | 1995-03-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0943832A true JPH0943832A (en) | 1997-02-14 |
| JP2771150B2 JP2771150B2 (en) | 1998-07-02 |
Family
ID=19410489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8108772A Expired - Fee Related JP2771150B2 (en) | 1995-03-24 | 1996-03-25 | Exposure mask for oblique incidence |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5698347A (en) |
| JP (1) | JP2771150B2 (en) |
| KR (1) | KR100190762B1 (en) |
| CN (1) | CN1088856C (en) |
| DE (1) | DE19611726B4 (en) |
| GB (1) | GB2299411B (en) |
| TW (1) | TW353787B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11204397A (en) * | 1998-01-08 | 1999-07-30 | Mitsubishi Electric Corp | Aperture used in pattern determination method and exposure apparatus |
| JP2007335543A (en) * | 2006-06-14 | 2007-12-27 | Fujitsu Ltd | Exposure method |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100236075B1 (en) * | 1997-09-29 | 1999-12-15 | 김영환 | Mask pattern |
| US6106979A (en) * | 1997-12-30 | 2000-08-22 | Micron Technology, Inc. | Use of attenuating phase-shifting mask for improved printability of clear-field patterns |
| US6096457A (en) | 1998-02-27 | 2000-08-01 | Micron Technology, Inc. | Method for optimizing printing of a phase shift mask having a phase shift error |
| US5998069A (en) * | 1998-02-27 | 1999-12-07 | Micron Technology, Inc. | Electrically programmable photolithography mask |
| KR100670043B1 (en) * | 1999-10-22 | 2007-01-16 | 삼성전자주식회사 | Manufacturing method of thin film transistor substrate for liquid crystal display device |
| US6335130B1 (en) * | 2000-05-01 | 2002-01-01 | Asml Masktools Netherlands B.V. | System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features |
| US6563566B2 (en) | 2001-01-29 | 2003-05-13 | International Business Machines Corporation | System and method for printing semiconductor patterns using an optimized illumination and reticle |
| JP2003007598A (en) * | 2001-06-25 | 2003-01-10 | Mitsubishi Electric Corp | Focus monitor method, focus monitor device, and semiconductor device manufacturing method |
| KR20030001985A (en) * | 2001-06-28 | 2003-01-08 | 주식회사 하이닉스반도체 | Exposure mask for semiconductor device manufacture |
| JP2003057800A (en) * | 2001-08-09 | 2003-02-26 | Mitsubishi Electric Corp | Focus monitor method, focus monitor device, and semiconductor device manufacturing method |
| KR100837565B1 (en) * | 2002-06-14 | 2008-06-11 | 동부일렉트로닉스 주식회사 | Mask and Evaluation Method for Incident Light Evaluation in Photolithography Process for Semiconductor Manufacturing |
| KR100760037B1 (en) * | 2003-03-31 | 2007-09-20 | 에이에스엠엘 마스크툴즈 비.브이. | Source and mask optimization |
| DE10356699B4 (en) * | 2003-11-28 | 2009-04-09 | Qimonda Ag | Lithography system for directional exposure |
| KR100680960B1 (en) | 2005-05-18 | 2007-02-09 | 주식회사 하이닉스반도체 | Photomasks for Semiconductor Device Manufacturing |
| JP4689471B2 (en) * | 2006-01-06 | 2011-05-25 | エルピーダメモリ株式会社 | Circuit pattern exposure method and mask |
| US7858271B2 (en) * | 2008-08-14 | 2010-12-28 | Tdk Corporation | Method of measuring dimension of pattern and method of forming pattern |
| CN103091970A (en) * | 2011-11-07 | 2013-05-08 | 上海华虹Nec电子有限公司 | Optical proximity correction method applied to square-hole pattern |
Citations (1)
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|---|---|---|---|---|
| JPH07301908A (en) * | 1994-05-06 | 1995-11-14 | Nippon Telegr & Teleph Corp <Ntt> | Original drawing substrate for projection exposure and projection exposure method |
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|---|---|---|---|---|
| US4902899A (en) * | 1987-06-01 | 1990-02-20 | International Business Machines Corporation | Lithographic process having improved image quality |
| JPH05232674A (en) * | 1991-07-12 | 1993-09-10 | Oki Electric Ind Co Ltd | Photomask and formation of resist pattern by using this photomask |
| JPH05232675A (en) * | 1991-07-12 | 1993-09-10 | Oki Electric Ind Co Ltd | Photomask and resist pattern forming method using the same |
| JP2676572B2 (en) * | 1991-11-18 | 1997-11-17 | シャープ株式会社 | Photo mask |
| JPH05281704A (en) * | 1992-04-02 | 1993-10-29 | Nec Corp | Photomask for semiconductor integrated circuit |
| US5256505A (en) * | 1992-08-21 | 1993-10-26 | Microunity Systems Engineering | Lithographical mask for controlling the dimensions of resist patterns |
| KR970003593B1 (en) * | 1992-09-03 | 1997-03-20 | Samsung Electronics Co Ltd | Projection exposure method and device using mask |
| JPH06188270A (en) * | 1992-12-15 | 1994-07-08 | Mitsubishi Electric Corp | Manufacture of field effect transistor and pattern transfer mask |
| US5447810A (en) * | 1994-02-09 | 1995-09-05 | Microunity Systems Engineering, Inc. | Masks for improved lithographic patterning for off-axis illumination lithography |
-
1995
- 1995-03-24 KR KR1019950006327A patent/KR100190762B1/en not_active Expired - Fee Related
-
1996
- 1996-03-22 US US08/620,379 patent/US5698347A/en not_active Expired - Lifetime
- 1996-03-22 TW TW085103465A patent/TW353787B/en not_active IP Right Cessation
- 1996-03-24 CN CN96107367A patent/CN1088856C/en not_active Expired - Fee Related
- 1996-03-25 JP JP8108772A patent/JP2771150B2/en not_active Expired - Fee Related
- 1996-03-25 DE DE19611726A patent/DE19611726B4/en not_active Expired - Fee Related
- 1996-03-25 GB GB9606267A patent/GB2299411B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07301908A (en) * | 1994-05-06 | 1995-11-14 | Nippon Telegr & Teleph Corp <Ntt> | Original drawing substrate for projection exposure and projection exposure method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11204397A (en) * | 1998-01-08 | 1999-07-30 | Mitsubishi Electric Corp | Aperture used in pattern determination method and exposure apparatus |
| JP2007335543A (en) * | 2006-06-14 | 2007-12-27 | Fujitsu Ltd | Exposure method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2771150B2 (en) | 1998-07-02 |
| US5698347A (en) | 1997-12-16 |
| DE19611726A1 (en) | 1996-09-26 |
| GB9606267D0 (en) | 1996-05-29 |
| TW353787B (en) | 1999-03-01 |
| DE19611726B4 (en) | 2004-07-01 |
| GB2299411B (en) | 1998-10-07 |
| KR960035136A (en) | 1996-10-24 |
| CN1088856C (en) | 2002-08-07 |
| GB2299411A (en) | 1996-10-02 |
| CN1142124A (en) | 1997-02-05 |
| KR100190762B1 (en) | 1999-06-01 |
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