JPH0945963A - Gan based semiconductor device - Google Patents
Gan based semiconductor deviceInfo
- Publication number
- JPH0945963A JPH0945963A JP21531395A JP21531395A JPH0945963A JP H0945963 A JPH0945963 A JP H0945963A JP 21531395 A JP21531395 A JP 21531395A JP 21531395 A JP21531395 A JP 21531395A JP H0945963 A JPH0945963 A JP H0945963A
- Authority
- JP
- Japan
- Prior art keywords
- gan
- substrate
- based semiconductor
- film
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000013078 crystal Substances 0.000 claims abstract description 54
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 5
- 229910052738 indium Inorganic materials 0.000 claims abstract description 5
- 238000002441 X-ray diffraction Methods 0.000 abstract description 9
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract description 4
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011780 sodium chloride Substances 0.000 abstract description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract 3
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052984 zinc sulfide Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 65
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光ダイオード
（ＬＥＤ）等の光電変換素子として利用されるＧａＮ系
半導体装置に関し、基板と半導体薄膜との格子整合性の
良好なＧａＮ系半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a GaN-based semiconductor device used as a photoelectric conversion element such as a light emitting diode (LED), and more particularly to a GaN-based semiconductor device having good lattice matching between a substrate and a semiconductor thin film.
【０００２】[0002]
【従来の技術】短波長レーザー発光ダイオードとして
は、これまでＳｉＣ系、ＺｎＳｅ系等の半導体装置が開
発、研究されたきたが、短波長高輝度発光ダイオードと
してＧａＮ系半導体装置が着目されている。ＧａＮ系半
導体膜は、分子線エピタキシー法（ＭＢＥ法）やＭＯＣ
ＶＤ法等により、基板上に成膜されるが、その基板とし
てこれまでサファイア（Ａｌ2Ｏ3）や砒素ガリウム（Ｇ
ａＡｓ）からなる基板が使用されていた。2. Description of the Related Art As a short-wavelength laser light emitting diode, SiC-based, ZnSe-based semiconductor devices have been developed and studied so far, but a GaN-based semiconductor device has attracted attention as a short-wavelength high-brightness light emitting diode. The GaN-based semiconductor film has a molecular beam epitaxy method (MBE method) or MOC.
The film is formed on the substrate by the VD method or the like. As the substrate, sapphire (Al 2 O 3 ) or gallium arsenide (G) has been used so far.
A substrate consisting of aAs) was used.
【０００３】[0003]
【発明が解決しようとしている課題】例えば、サファイ
アは六方晶系の結晶構造を有するが、サファイア基板上
にＧａＮを成膜した場合、サファイアとＧａＮの結晶の
格子常数の差が大きいために結晶格子の整合性が悪い。
具体的には、サファイアとＧａＮの格子常数の不整合率
は１６％以上に及び、転移密度が大きなＧａＮの結晶膜
しか得られない。また、ＧａＡｓ基板を用いた場合は、
ジンクブレード型（Ｚｉｎｃｂｌｅｒｄｅ ｔｙｐｅ）
のＧａＮの成長が可能で、へき開もしやすいことから、
光電変換素子として好都合であると考えられている。し
かし、サファイア基板と同様にＧａＮとの格子常数の不
整合率が大きく、しかもＧａＡｓ基板とＧａＮ半導体膜
との界面で化学反応が生じやすく、良好な結晶の半導体
膜を得ることが困難である。For example, sapphire has a hexagonal crystal structure, but when GaN is deposited on a sapphire substrate, the crystal lattice difference between sapphire and GaN is large, so that the crystal lattice The integrity of is poor.
Specifically, the mismatch rate of the lattice constants of sapphire and GaN reaches 16% or more, and only a GaN crystal film having a high dislocation density can be obtained. When using a GaAs substrate,
Zinc blade type
GaN can be grown and cleaved easily,
It is considered to be convenient as a photoelectric conversion element. However, as in the case of the sapphire substrate, the lattice constant mismatch with GaN is large, and a chemical reaction is likely to occur at the interface between the GaAs substrate and the GaN semiconductor film, making it difficult to obtain a good crystalline semiconductor film.
【０００４】このため従来では、良好な結晶を有するＧ
ａＮ半導体膜を歩留りよく製造することはきわめて困難
であった。本発明は、このような従来の課題に鑑み、基
板とＧａＮ系半導体膜と結晶格子常数の高い整合性が得
られ、転移密度が小さく、良好な結晶性を有するＧａＮ
系半導体膜を成膜することを可能とすることを目的とす
る。For this reason, conventionally, G having a good crystal has been used.
It was extremely difficult to manufacture an aN semiconductor film with high yield. In view of such conventional problems, the present invention provides a GaN having high crystal lattice constant matching between the substrate and the GaN-based semiconductor film, a low dislocation density, and good crystallinity.
It is an object of the present invention to make it possible to form a system semiconductor film.
【０００５】[0005]
【課題を解決するための手段】前記の目的を達成するた
め、本発明では、ＧａＮ系半導体膜を成膜する基板とし
て、ＮａＦ或はＭｇＦ2 の単結晶基板を用いることとし
た。すなわち、本発明によるＧａＮ系半導体装置は、基
板上にＧａＮ系半導体膜を成膜してなるものであって、
ＮａＦ或はＭｇＦ2 の単結晶基板上にＧａＮ系半導体膜
を成膜してなることを特徴とするものである。ここでい
うＧａＮ系半導体膜は、ＧａＮ半導体膜並びにＧａＮを
主とし、ＧａとＮに各々それらと同族の元素が混晶した
ものを含む。例えばＧａにＡｌ及びＩｎの少なくとも何
れかが混晶した半導体膜や、ＮにＰ及びＡｓの少なくと
も何れかが混晶した半導体膜を含むものである。In order to achieve the above object, in the present invention, a single crystal substrate of NaF or MgF 2 is used as a substrate for forming a GaN semiconductor film. That is, the GaN-based semiconductor device according to the present invention comprises a GaN-based semiconductor film formed on a substrate,
It is characterized in that a GaN-based semiconductor film is formed on a single crystal substrate of NaF or MgF 2 . The GaN-based semiconductor film referred to here mainly includes a GaN semiconductor film and GaN, and includes Ga and N each having a mixed crystal of an element in the same group as Ga and N. For example, it includes a semiconductor film in which Ga is a mixed crystal of at least one of Al and In and a semiconductor film in which N is a mixed crystal of at least one of P and As.
【０００６】ＮａＦ或はＭｇＦ2 の単結晶基板は、何れ
も正方晶系に属する結晶構造を有し、ＮａＦはＮａＣｌ
型結晶構造、ＭｇＦ2 はリチル型結晶構造である。この
ようなＮａＦ或はＭｇＦ2 の単結晶基板上にＧａＮ系半
導体膜を成膜した場合、Ｘ線回折の結果確認できる基板
とＧａＮ系半導体膜との結晶格子常数の差は２％以下で
ある。また、ＧａＮ系半導体膜の回折強度のピークの半
値幅も、サファイア基板上に成膜したものでは約１２’
と広いのに対し、ＮａＦ或はＭｇＦ2 の単結晶基板上に
成膜したものでは、それら基板と同程度に狭く、結晶性
が向上する。例えば、後述する通りＮａＦの単結晶基板
を用い、その上に成膜したＧａＮ半導体膜のＸ線回折の
結果では、ＧａＮとＮａＦの回折線強度のピークが何れ
も回折角４０°付近に見られ、ジンクブレード型（Ｚｉ
ｎｃｂｌｅｒｄｅ ｔｙｐｅ）のＧａＮが成長している
のが確認される。これはＭｇＦ2 の単結晶基板でも同様
である。Both NaF and MgF 2 single crystal substrates have a crystal structure belonging to the tetragonal system, and NaF is NaCl.
Type crystal structure, and MgF 2 has a lithyl type crystal structure. When a GaN-based semiconductor film is formed on such a NaF or MgF 2 single crystal substrate, the difference in crystal lattice constant between the substrate and the GaN-based semiconductor film which can be confirmed by X-ray diffraction is 2% or less. . In addition, the FWHM of the peak of the diffraction intensity of the GaN-based semiconductor film is about 12 'for the film formed on the sapphire substrate.
On the other hand, when the film is formed on a single crystal substrate of NaF or MgF 2 , it is as narrow as those substrates and the crystallinity is improved. For example, as will be described later, in the result of X-ray diffraction of a GaN semiconductor film formed on a NaF single crystal substrate, the peaks of the diffraction line intensities of GaN and NaF are both found near the diffraction angle of 40 °. , Zinc blade type (Zi
It is confirmed that GaN of ncblerde type) is growing. This also applies to the MgF 2 single crystal substrate.
【０００７】[0007]
【発明の実施の形態】本発明によるＧａＮ系半導体装置
では、、ＮａＦ或はＭｇＦ2 の単結晶基板上にＧａＮ系
半導体膜を成膜してなる。ここでいうＧａＮ系半導体膜
は、ＧａＮ半導体膜並びにＧａＮを主とし、ＧａとＮに
各々それらと同族の元素が混晶したものを含む。例えば
ＧａにＡｌ及びＩｎの少なくとも何れかが混晶した半導
体膜や、ＮにＰ及びＡｓの少なくとも何れかが混晶した
半導体膜を含むものである。例えば、ＮａＦの単結晶基
板やＭｇＦ2 単結晶基板の上に、ＧａＮ膜、Ｇａ0.1Ａ
ｌ0 .9Ｎ膜、Ｇａ0.83Ｉｎ0.17Ｎ膜、ＧａＮ0.9Ｐ
0.1膜、ＧａＮ0.92Ａｓ0.08膜を成膜する。このような
ＧａＮ系膜はジンクブレード型（Ｚｉｎｃｂｌｅｒｄｅ
ｔｙｐｅ）の半導体膜である。なお、基板上のＧａＮ系
膜を成膜するに当たっては、ＳｉやＭｇ等の不純物を含
有させ、ｐ層をｎ層を順次形成し、ｐ−ｎ接合を有する
ＬＥＤ等の半導体装置として構成する。BEST MODE FOR CARRYING OUT THE INVENTION In a GaN-based semiconductor device according to the present invention, a GaN-based semiconductor film is formed on a NaF or MgF 2 single crystal substrate. The GaN-based semiconductor film referred to here mainly includes a GaN semiconductor film and GaN, and includes Ga and N each having a mixed crystal of an element in the same group as Ga and N. For example, it includes a semiconductor film in which Ga is a mixed crystal of at least one of Al and In and a semiconductor film in which N is a mixed crystal of at least one of P and As. For example, on a NaF single crystal substrate or a MgF 2 single crystal substrate, a GaN film, Ga 0.1 A
l 0 .9 N film, Ga 0.83 In 0.17 N layer, GaN 0.9 P
A 0.1 film and a GaN 0.92 As 0.08 film are formed. Such a GaN-based film is a zinc blade type (Zincblade
type) semiconductor film. When forming a GaN-based film on a substrate, impurities such as Si and Mg are contained, p layers are sequentially formed into n layers, and a semiconductor device such as an LED having a pn junction is formed.
【０００８】[0008]
【実施例】次に、本発明の実施例について具体的且つ詳
細に説明する。 （実施例１）ＮａＦの単結晶基板を用意し、基板ホルダ
ー上にＩｎ箔を張り、ホットプレートで基板ホルダーの
保持面を２００℃に加熱し、その上に前記基板を貼り付
けた。この基板を貼り付けた基板ホルダーをロードロッ
ク室に導入し、ロードロック室を排気した後、基板ホル
ダーを成膜室に搬入した。その後、基板の成膜面を７８
０℃に加熱し、同成膜面をフラッシングした。その後、
基板の成膜面のＲＨＥＥＤパターンがストリークパター
ン状になるのを確認した。EXAMPLES Next, examples of the present invention will be described specifically and in detail. (Example 1) A single crystal substrate of NaF was prepared, an In foil was put on a substrate holder, a holding surface of the substrate holder was heated to 200 ° C with a hot plate, and the substrate was attached thereon. The substrate holder to which this substrate was attached was introduced into the load lock chamber, the load lock chamber was evacuated, and then the substrate holder was carried into the film formation chamber. After that, the film formation surface of the substrate is adjusted to 78
It heated at 0 degreeC and flushed the same film-forming surface. afterwards,
It was confirmed that the RHEED pattern on the film formation surface of the substrate became a streak pattern.
【０００９】次に、基板温度を７２０℃とし、モレキュ
ラービームソースから温度１，０２０℃、ビーム強度
１．２×１０-6Ｔｏｒｒで基板の成膜面にＧａ分子を照
射した。同時に、ラジカルビームソースに０．６ｃｃ／
ｍｉｎの流量でＮ2 ガスを導入し、１１７Ｗの高周波プ
ラズマでＮ2 を励起し、そのラジカルビームを発生さ
せ、これを１．９×１０-5Ｔｏｒｒのビーム強度で基板
の成膜面に照射した。これにより、基板の成膜面に０．
５μ／ｈｏｕｒの成膜速度でＧａＮ膜が成長する。この
条件で約２時間成膜を行った。次に、基板を保持した基
板ホルダーをロードロック室に搬出し、室温まで冷却し
た後、ロードロック室を大気圧に戻した。ロードロック
室から基板ホルダーを取り出し、基板ホルダーを２００
℃に加熱してＩｎを溶解し、基板を取り外した。Next, the substrate temperature was set to 720 ° C., a molecular beam source was used to irradiate Ga molecules on the film forming surface of the substrate at a temperature of 1,020 ° C. and a beam intensity of 1.2 × 10 −6 Torr. At the same time, 0.6cc / for the radical beam source
A N 2 gas was introduced at a flow rate of min, N 2 was excited by a high-frequency plasma of 117 W to generate a radical beam thereof, and the radical beam was irradiated onto the film formation surface of the substrate with a beam intensity of 1.9 × 10 −5 Torr. did. As a result, 0.
A GaN film grows at a film formation rate of 5 μ / hour. Film formation was performed under these conditions for about 2 hours. Next, the substrate holder holding the substrate was carried out to the load lock chamber, cooled to room temperature, and then the load lock chamber was returned to atmospheric pressure. Remove the board holder from the load lock chamber
The substrate was removed by heating to 0 ° C. to dissolve In.
【００１０】次に、Ｘ線ディフラクトメーターを使用
し、この基板上のＧａＮ膜のＸ線回折を行った。なお、
Ｘ線管にはＣｕ陽極を使用し、電子線のエネルギーは４
０ｋＶ、３０ｍＡとした。シンチレーションカウンター
と基板の角速度比は２θ／θとし、１．０００°／ｍｉ
ｎの走査速度により０．１００°のステップで走査し
た。この結果である回折角−回折線強度を図１に示す。
この図１から明かな通り、ＧａＮの（２００）回折格子
面とＮａＦ基板の（１００）回折格子面の回折線強度の
ピークが何れも回折角３８°付近に見られ、それらの格
子常数差は１．６％である。また、回折線強度のピーク
の半値幅も何れも同程度に狭く、それらの格子常数の整
合性が極めて高いことが確認された。すなわち、ＧａＮ
の結晶性が極めて高いことを示している。Next, the GaN film on this substrate was subjected to X-ray diffraction using an X-ray diffractometer. In addition,
The Cu anode is used for the X-ray tube, and the electron beam energy is 4
It was set to 0 kV and 30 mA. The angular velocity ratio between the scintillation counter and the substrate is 2θ / θ, and 1.000 ° / mi
Scanning was performed in 0.100 ° steps with a scanning speed of n. The diffraction angle-diffraction line intensity which is the result is shown in FIG.
As is clear from FIG. 1, the peaks of the diffraction line intensities of the (200) diffraction grating surface of GaN and the (100) diffraction grating surface of the NaF substrate are both seen near the diffraction angle of 38 °, and the difference in their grating constants is It is 1.6%. Further, it was confirmed that the half widths of the peaks of the diffraction line intensities were all narrow to the same extent, and the matching of the lattice constants thereof was extremely high. That is, GaN
It shows that the crystallinity of is extremely high.
【００１１】（実施例２）前記実施例１において、Ｎａ
Ｆの単結晶基板に代えてＭｇＦ2 単結晶基板を用い、そ
の成膜面上に前記実施例と同様にしてＧａＮ膜を成膜し
た。そして、この基板上に成膜したＧａＮ膜について、
前述と同様にしてＸ線ディフラクトメーターを使用し、
Ｘ線回折を行った。この結果である回折角−回折線強度
を図２に示す。この図２から明かな通り、ＧａＮの（１
１０）回折格子面とＭｇＦ2 基板の（２００）回折格子
面の回折線強度のピークが何れも回折角６０°付近に見
られ、それらの格子常数差は１．６％である。また、回
折線強度のピークの半値幅も何れも同程度に狭く、それ
らの格子常数の整合性が極めて高いことが確認された。(Example 2) In the above Example 1, Na
A MgF 2 single crystal substrate was used in place of the F single crystal substrate, and a GaN film was formed on the film formation surface in the same manner as in the above-described example. Then, regarding the GaN film formed on this substrate,
Using the X-ray diffractometer as above,
X-ray diffraction was performed. The diffraction angle-diffraction line intensity that is the result is shown in FIG. As is clear from FIG. 2, GaN (1
10) The peaks of the diffraction line intensities of the diffraction grating surface and the (200) diffraction grating surface of the MgF 2 substrate are both seen near the diffraction angle of 60 °, and the difference in the grating constant between them is 1.6%. Further, it was confirmed that the half widths of the peaks of the diffraction line intensities were all narrow to the same extent, and the matching of the lattice constants thereof was extremely high.
【００１２】（比較例）前記実施例１において、ＮａＦ
の単結晶基板に代えてサファイア基板を用い、その成膜
面上に前記実施例と同様にしてＧａＮ膜を成膜した。そ
して、このサファイア基板上に成膜したＧａＮ膜につい
て、前述と同様にしてＸ線ディフラクトメーターを使用
し、Ｘ線回折を行った。この結果である回折角−回折線
強度を図７に示す。この図７から明かな通り、回折角３
５°付近にＧａＮの（０００４）回折格子面の回折線強
度が見える一方、回折角４０°付近にＮａＦ基板の（０
００１）回折格子面の回折線強度のピークが見られ、そ
れらの格子常数差は約１６％である。すなわち、それら
の格子常数の整合性が極めて悪いことが分かる。また、
成膜されたＧａＮの回折線強度のピークの半値幅は約１
２’あり、サファイア基板の回折線強度のピークの半値
幅に比べてきわめて広く、転移密度の大きな結晶しか得
られていないことが分かる。(Comparative Example) In Example 1, the NaF
A sapphire substrate was used in place of the single crystal substrate of, and a GaN film was formed on the film formation surface in the same manner as in the above example. Then, the GaN film formed on this sapphire substrate was subjected to X-ray diffraction using an X-ray diffractometer in the same manner as described above. The diffraction angle-diffraction line intensity that is the result is shown in FIG. As is clear from FIG. 7, the diffraction angle is 3
The diffraction line intensity of the (0004) diffraction grating plane of GaN can be seen near 5 °, while the (0) of the NaF substrate appears near the diffraction angle of 40 °.
The peak of the diffraction line intensity of the 001) diffraction grating surface is observed, and the difference in the grating constants between them is about 16%. That is, it can be seen that the matching of these lattice constants is extremely poor. Also,
The full width at half maximum of the diffraction line intensity peak of the deposited GaN is about 1
It can be seen that 2 ′ is present, which is extremely wider than the half-value width of the peak of the diffraction line intensity of the sapphire substrate, and only crystals with a large dislocation density are obtained.
【００１３】前記実施例１及び２では、ＮａＦの単結晶
基板及びＭｇＦ2 単結晶基板の上にＧａＮ膜を成膜した
が、ＧａＮを主とし、ＧａとＮに各々それらと同族の元
素が混晶したもの、例えばＧａにＡｌ及びＩｎの少なく
とも何れかが混晶した半導体膜や、ＮにＰ及びＡｓの少
なくとも何れかが混晶した半導体膜でも同様の結果が得
られる。具体的な例をあげると、ＮａＦの単結晶基板や
ＭｇＦ2 単結晶基板の上に、Ｇａ0.1Ａｌ0.9Ｎ膜、Ｇａ
0.83Ｉｎ0.17Ｎ膜、ＧａＮ0.9Ｐ0.1膜、ＧａＮ0.92Ａｓ
0.08膜を成膜した試料について、Ｘ線ディフラクトメー
ターを使用してＸ線回折を行った結果では、基板と成膜
したＧａＮ系半導体膜との格子常数差が何れも２％以下
であることが確認されている。In the first and second embodiments, the GaN film is formed on the NaF single crystal substrate and the MgF 2 single crystal substrate. However, GaN is mainly used, and Ga and N are mixed with elements of the same group as Ga and N, respectively. Similar results can be obtained with a crystallized one, for example, a semiconductor film in which Ga is mixed with at least one of Al and In, and a semiconductor film in which N is mixed with at least one of P and As. As a concrete example, a Ga 0.1 Al 0.9 N film, a Ga 0.1 Al 0.9 N film, and a GaF 2 single crystal substrate are provided on a NaF single crystal substrate or a MgF 2 single crystal substrate.
0.83 In 0.17 N film, GaN 0.9 P 0.1 film, GaN 0.92 As
X-ray diffraction of the 0.08 film sample using an X-ray diffractometer shows that the lattice constant difference between the substrate and the GaN-based semiconductor film is 2% or less. Has been confirmed.
【００１４】また、以上の実施例と比較例では、ＧａＮ
系膜と基板との結晶格子の整合性を調べたもので、Ｇａ
Ｎ系膜には不純物を含ませずに成膜した。実際の半導体
装置では、基板上のＧａＮ系膜にＳｉやＭｇ等の不純物
を含有させ、ｐ−ｎ接合を有するＬＥＤ等の半導体装置
として構成することは言うまでもない。Further, in the above-mentioned Examples and Comparative Examples, GaN is used.
This is an examination of the matching of the crystal lattice between the system film and the substrate.
The N-based film was formed without containing impurities. It goes without saying that in an actual semiconductor device, a GaN-based film on a substrate contains impurities such as Si and Mg to constitute a semiconductor device such as an LED having a pn junction.
【００１５】[0015]
【発明の効果】以上説明した通り、本発明によるＧａＮ
系半導体装置によれば、基板とＧａＮ系半導体膜との高
い結晶格子常数が得られる。具体的には、基板とＧａＮ
系半導体膜との結晶格子常数の差は２％以下である。ま
た、ＧａＮ系半導体膜の回折強度のピークの半値幅も、
基板と同程度に狭い。このため、ＧａＮ膜の結晶性が向
上し、転移密度が小さな良好な結晶構造を有するＧａＮ
系半導体膜を成膜することが可能となる。特に、ＮａＦ
は正方晶で基板と一緒にへきかいができ、光の反射を用
いるレーザーに有利である。As described above, GaN according to the present invention
According to the semiconductor-based semiconductor device, a high crystal lattice constant between the substrate and the GaN-based semiconductor film can be obtained. Specifically, the substrate and GaN
The difference in the crystal lattice constant from the system semiconductor film is 2% or less. In addition, the full width at half maximum of the diffraction intensity peak of the GaN-based semiconductor film is
As narrow as the board. Therefore, the crystallinity of the GaN film is improved, and GaN having a good crystal structure with a low dislocation density is obtained.
It becomes possible to form a system semiconductor film. Especially NaF
Is tetragonal and can be cleaved together with the substrate, which is advantageous for lasers that use light reflection.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の実施例によるＧａＮ系半導体装置のＸ
線回折の回折角−回折線強度を示すグラフである。FIG. 1 is an X of a GaN-based semiconductor device according to an embodiment of the present invention.
It is a graph which shows the diffraction angle of diffraction-diffraction line intensity.
【図２】本発明の他の実施例によるＧａＮ系半導体装置
のＸ線回折の回折角−回折線強度を示すグラフである。FIG. 2 is a graph showing an X-ray diffraction angle-diffraction line intensity of a GaN-based semiconductor device according to another embodiment of the present invention.
【図３】比較例によるＧａＮ系半導体装置のＸ線回折の
回折角−回折線強度を示すグラフである。FIG. 3 is a graph showing a diffraction angle-diffraction line intensity of X-ray diffraction of a GaN-based semiconductor device according to a comparative example.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成７年１２月２８日[Submission date] December 28, 1995
【手続補正１】[Procedure amendment 1]
【補正対象書類名】図面[Document name to be amended] Drawing
【補正対象項目名】全図[Correction target item name] All figures
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【図１】 FIG.
【図２】 [Fig. 2]
【図３】 [Figure 3]
Claims (4)
るＧａＮ系半導体装置において、ＮａＦ或はＭｇＦ2 の
単結晶基板上にＧａＮ系半導体膜を成膜してなることを
特徴とするＧａＮ系半導体装置。1. A GaN-based semiconductor device in which a GaN-based semiconductor film is formed on a substrate, wherein the GaN-based semiconductor film is formed on a single crystal substrate of NaF or MgF 2. GaN-based semiconductor device.
びＧａＮを主とし、ＧａとＮに各々それらと同族の元素
が混晶した半導体膜であることを特徴とする請求項１に
記載のＧａＮ系半導体装置。2. The GaN-based semiconductor film according to claim 1, wherein the GaN-based semiconductor film is a semiconductor film mainly composed of a GaN semiconductor film and GaN, and Ga and N are mixed crystals of elements in the same group as those of Ga and N, respectively. Semiconductor device.
の少なくとも何れかが混晶した半導体膜であることを特
徴とする請求項１または２に記載のＧａＮ系半導体装
置。3. The GaN semiconductor film comprises Ga and Al and In.
The GaN-based semiconductor device according to claim 1 or 2, wherein at least one of them is a mixed crystal semiconductor film.
なくとも何れかが混晶した半導体膜であることを特徴と
する請求項１〜３の何れかに記載のＧａＮ系半導体装
置。4. The GaN-based semiconductor device according to claim 1, wherein the GaN semiconductor film is a semiconductor film in which at least one of P and As is mixed with N.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21531395A JPH0945963A (en) | 1995-07-31 | 1995-07-31 | Gan based semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21531395A JPH0945963A (en) | 1995-07-31 | 1995-07-31 | Gan based semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0945963A true JPH0945963A (en) | 1997-02-14 |
Family
ID=16670256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21531395A Pending JPH0945963A (en) | 1995-07-31 | 1995-07-31 | Gan based semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0945963A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03149889A (en) * | 1989-11-06 | 1991-06-26 | Sharp Corp | Semiconductor laser device and manufacture thereof |
| JPH04236477A (en) * | 1991-01-21 | 1992-08-25 | Pioneer Electron Corp | Semiconductor light emitting element |
| JPH0529653A (en) * | 1991-07-19 | 1993-02-05 | Toshiba Corp | Semiconductor element |
| JPH05251819A (en) * | 1991-12-27 | 1993-09-28 | American Teleph & Telegr Co <Att> | Optical device having electronic beam deposited multilayer mirror |
| JPH0669546A (en) * | 1992-08-21 | 1994-03-11 | Asahi Chem Ind Co Ltd | Light-emitting diode |
| JPH06334168A (en) * | 1993-03-26 | 1994-12-02 | Hitachi Ltd | Semiconductor element |
-
1995
- 1995-07-31 JP JP21531395A patent/JPH0945963A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03149889A (en) * | 1989-11-06 | 1991-06-26 | Sharp Corp | Semiconductor laser device and manufacture thereof |
| JPH04236477A (en) * | 1991-01-21 | 1992-08-25 | Pioneer Electron Corp | Semiconductor light emitting element |
| JPH0529653A (en) * | 1991-07-19 | 1993-02-05 | Toshiba Corp | Semiconductor element |
| JPH05251819A (en) * | 1991-12-27 | 1993-09-28 | American Teleph & Telegr Co <Att> | Optical device having electronic beam deposited multilayer mirror |
| JPH0669546A (en) * | 1992-08-21 | 1994-03-11 | Asahi Chem Ind Co Ltd | Light-emitting diode |
| JPH06334168A (en) * | 1993-03-26 | 1994-12-02 | Hitachi Ltd | Semiconductor element |
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