JPH0951151A - Circuit board for power module and manufacturing method thereof - Google Patents
Circuit board for power module and manufacturing method thereofInfo
- Publication number
- JPH0951151A JPH0951151A JP20303295A JP20303295A JPH0951151A JP H0951151 A JPH0951151 A JP H0951151A JP 20303295 A JP20303295 A JP 20303295A JP 20303295 A JP20303295 A JP 20303295A JP H0951151 A JPH0951151 A JP H0951151A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- circuit board
- ceramic substrate
- power module
- porous metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
(57)【要約】 (修正有)
【課題】熱変形を吸収してセラミック基板の反りや割れ
を防止し、小型にでき、比較的軽くする。
【解決手段】Al2O3又はAlNにより形成されたセラ
ミック基板13に可塑性多孔質金属17からなる回路が
形成される。セラミック基板には必要に応じて回路を構
成するAl又はCuからなる金属薄板14が接着され、
その上に可塑性多孔質金属が積層される。製造方法は金
属粉含有スラリーをセラミック基板上に所定の回路パタ
ーンとなるように塗布し乾燥して発泡させる工程と、回
路パターンと同一のパターンにより発泡層上にスラリー
を塗布し乾燥して発泡させる工程と、積層した発泡層を
焼成して可塑性多孔質金属からなる回路をセラミック基
板上に形成することが好ましい。可塑性多孔質金属には
シリコーングリース等が充填又は含浸される。
(57) [Abstract] (Corrected) [PROBLEMS] To prevent warpage and cracking of a ceramic substrate by absorbing thermal deformation, to reduce the size and to make it relatively light. A circuit made of a plastic porous metal is formed on a ceramic substrate made of Al 2 O 3 or AlN. If necessary, a thin metal plate 14 made of Al or Cu forming a circuit is bonded to the ceramic substrate,
A plastic porous metal is laminated thereon. The manufacturing method is a step of applying a slurry containing a metal powder on a ceramic substrate so as to form a predetermined circuit pattern, drying and foaming, and applying a slurry on a foam layer with the same pattern as the circuit pattern, drying and foaming. It is preferable that the step and the laminated foam layer are fired to form a circuit made of a plastic porous metal on the ceramic substrate. The plastic porous metal is filled or impregnated with silicone grease or the like.
Description
【0001】[0001]
【発明の属する技術分野】本発明は電力を供給するパワ
ーモジュール用回路基板及びその製造方法に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power module circuit board for supplying power and a method for manufacturing the same.
【0002】[0002]
【従来の技術】従来、この種のパワーモジュール用回路
基板として、Cu又はAlにより形成された回路基板を
セラミック基板に接着するものが知られている。この接
着方法ではセラミック基板と回路基板を直接積層接着す
る方法が提案されている。この直接積層接着する方法と
して、セラミック基板及び回路基板をAl2O3及びCu
によりそれぞれ形成した場合、セラミック基板と回路基
板とを重ねた状態でこれらに荷重0.5〜2kgf/c
m2を加え、N2雰囲気中で1065℃に加熱するいわゆ
るDBC法(Direct Bonding Copper 法)、又はセラミ
ック基板と回路基板との間にAg−Cu−Tiろう材の
箔を挟んだ状態でこれらに荷重0.5〜2kgf/cm
2を加え、真空中で800〜900℃に加熱するいわゆ
る活性金属法がある。2. Description of the Related Art Heretofore, as a circuit board for a power module of this type, there has been known one in which a circuit board made of Cu or Al is adhered to a ceramic substrate. In this bonding method, a method of directly laminating and bonding a ceramic substrate and a circuit board has been proposed. As a method for directly laminating and bonding the ceramic substrate and the circuit substrate, Al 2 O 3 and Cu are used.
In the case where the ceramic substrate and the circuit board are overlapped with each other, a load of 0.5 to 2 kgf / c is applied to them.
The so-called DBC method (Direct Bonding Copper method) in which m 2 is added and heated to 1065 ° C. in an N 2 atmosphere, or Ag-Cu-Ti brazing material foil is sandwiched between a ceramic substrate and a circuit substrate. Load 0.5 to 2 kgf / cm
There is a so-called active metal method in which 2 is added and heated to 800 to 900 ° C. in a vacuum.
【0003】[0003]
【発明が解決しようとする課題】しかし、上記直接積層
接着する方法では、回路基板をセラミック基板に接着で
きるが、セラミック基板と回路基板との熱膨張係数が異
なるため、パワーモジュール基板に反りを生じたり、熱
サイクルによりセラミック基板に割れを生じたりする問
題点があった。特に電流密度を高めるために回路基板の
断面積を向上させようとすると、比較的薄いセラミック
基板の場合に回路基板の熱による変形力がセラミック基
板の強度を上回ってセラミック基板が破損する恐れがあ
った。これらの点を解消するためにセラミック基板の厚
さを増加させると、質量の増加と形状の大型化を招き、
また熱抵抗値の増大から放熱特性が劣る問題点がある。
本発明の目的は、熱変形を吸収してセラミック基板の反
りや割れを防止できるパワーモジュール用回路基板及び
その製造方法を提供することにある。本発明の別の目的
は、セラミック基板を薄くして小型にできかつ比較的軽
くすることのできるパワーモジュール用回路基板及びそ
の製造方法を提供することにある。However, although the circuit board can be adhered to the ceramic board by the above-mentioned method of directly laminating and adhering, since the ceramic board and the circuit board have different thermal expansion coefficients, the power module board is warped. There is a problem that the ceramic substrate may be cracked due to the heat cycle. Especially when trying to increase the cross-sectional area of the circuit board in order to increase the current density, the deformation force due to the heat of the circuit board may exceed the strength of the ceramic board and the ceramic board may be damaged in the case of a relatively thin ceramic board. It was Increasing the thickness of the ceramic substrate to eliminate these points causes an increase in mass and an increase in shape,
Further, there is a problem that the heat dissipation property is deteriorated due to the increase of the thermal resistance value.
An object of the present invention is to provide a power module circuit board that absorbs thermal deformation and prevents warpage and cracking of the ceramic board, and a method for manufacturing the same. Another object of the present invention is to provide a circuit board for a power module and a method for manufacturing the same, in which the ceramic board can be made thin to be small in size and can be made relatively lightweight.
【0004】[0004]
【課題を解決するための手段】請求項1に係る発明は、
図1に示すように、Al2O3又はAlN焼結体からなる
セラミック基板13上に可塑性多孔質金属17からなる
回路が形成されたパワーモジュール用回路基板である。
請求項2に係る発明は、図2に示すように、Al2O3又
はAlN焼結体からなるセラミック基板13上に回路を
構成するAl又はCuからなる金属薄板14が接着さ
れ、金属薄板14上に可塑性多孔質金属17が積層され
たパワーモジュール用回路基板である。金属薄板はCu
板若しくはAl板のプレス成形又はエッチング加工によ
り回路を構成するように形成される。金属薄板は厚さ
0.05〜0.20mmであり、セラミック基板と金属
薄板14との間にろう材であるAl−Siろう材の箔を
挟んだ状態でこれらに荷重0.5〜2kgf/cm2を
加え、真空中で600〜650℃に加熱することによ
り、金属薄板14がセラミック基板13に接着される。The invention according to claim 1 is
As shown in FIG. 1, it is a power module circuit board in which a circuit made of a plastic porous metal 17 is formed on a ceramic substrate 13 made of an Al 2 O 3 or AlN sintered body.
In the invention according to claim 2, as shown in FIG. 2, a metal thin plate 14 made of Al or Cu forming a circuit is bonded onto a ceramic substrate 13 made of an Al 2 O 3 or AlN sintered body to form a metal thin plate 14. A circuit board for a power module, on which a plastic porous metal 17 is laminated. Metal thin plate is Cu
The plate or Al plate is formed by press molding or etching to form a circuit. The metal thin plate has a thickness of 0.05 to 0.20 mm, and a load of 0.5 to 2 kgf / is applied to the metal substrate 14 and the metal thin plate 14 with a foil of Al-Si brazing material as a brazing material sandwiched therebetween. The thin metal plate 14 is bonded to the ceramic substrate 13 by adding cm 2 and heating to 600 to 650 ° C. in a vacuum.
【0005】請求項3に係る発明は、図3に示すよう
に、可塑性多孔質金属17からなる回路がシリコーンゲ
ル18で包囲されたパワーモジュール用回路基板であ
る。請求項4に係る発明は、可塑性多孔質金属17から
なる回路にシリコーングリース、シリコーンオイル又は
エポキシ樹脂が充填又は含浸されたパワーモジュール用
回路基板である。The invention according to claim 3 is a circuit board for a power module, as shown in FIG. 3, in which a circuit made of a plastic porous metal 17 is surrounded by a silicone gel 18. The invention according to claim 4 is a circuit board for a power module, in which a circuit made of a plastic porous metal 17 is filled or impregnated with silicone grease, silicone oil, or epoxy resin.
【0006】請求項5に係る発明は、(a)平均粒径が5
〜100μmのCu,Al又はAgからなる金属粉と、
水溶性樹脂バインダと、非水溶性炭化水素系有機溶剤
と、界面活性剤と、可塑剤と、水とを含む金属粉含有ス
ラリーをAl2O3又はAlN焼結体からなるセラミック
基板13上に所定の回路パターンとなるように塗布し乾
燥して発泡させる工程と、(b)回路パターンと同一のパ
ターンにより発泡層上にスラリーを塗布し乾燥して発泡
させる工程と、(c)積層した発泡層を焼成して可塑性多
孔質金属17からなる回路をセラミック基板13上に形
成する工程とを含むパワーモジュール用回路基板の製造
方法である。According to the invention of claim 5, (a) the average particle size is 5
A metal powder composed of Cu, Al or Ag having a size of 100 μm
A metal powder-containing slurry containing a water-soluble resin binder, a water-insoluble hydrocarbon-based organic solvent, a surfactant, a plasticizer, and water is placed on a ceramic substrate 13 made of an Al 2 O 3 or AlN sintered body. A step of applying and drying to form a predetermined circuit pattern, and foaming; (b) a step of applying a slurry on the foam layer by the same pattern as the circuit pattern and drying and foaming; and (c) laminated foaming. And a step of firing the layer to form a circuit made of the plastic porous metal 17 on the ceramic substrate 13, a method of manufacturing a circuit board for a power module.
【0007】Cuの可塑性多孔質金属では金属粉として
平均粒径5〜100μmのCu粉が用いられ、Alの可
塑性多孔質金属では金属粉として平均粒径5〜100μ
mのAl粉と平均粒径5〜100μmのCu粉の混合物
が用いられ、Agの可塑性多孔質金属では金属粉として
平均粒径5〜100μmのAg粉が用いられる。水溶性
樹脂バインダとしてはメチルセルロース、ヒドロキシプ
ロピルメチルセルロース、ヒドロキシエチルメチルセル
ロース、カルボキシメチルセルロースアンモニウム、エ
チルセルロース等が用いられ、非水溶性炭化水素系有機
溶剤としてはネオペンタン、ヘキサン、イソヘキサン、
ヘプタン等が用いられる。また界面活性剤としては市販
の台所用中性合成洗剤(例えばアルキルグルコシドとポ
リオキシエチレンアルキルエーテルの28%混合水溶
液)が用いられ、可塑剤としてはエチレングリコール、
ポリエチレングリコール、グリセリン等の多価アルコー
ルや、イワシ油、菜種油、オリーブ油等の油脂や、石油
エーテル等のエーテルや、フタル酸ジエチル、フタル酸
ジNブチル、フタル酸ジエチルヘキシル、フタル酸ジN
オクチル等のエステルが用いられる。In the plastic porous metal of Cu, Cu powder having an average particle diameter of 5 to 100 μm is used as the metal powder, and in the plastic porous metal of Al, the average particle diameter of 5 to 100 μm as the metal powder.
A mixture of Al powder of m and Cu powder having an average particle size of 5 to 100 μm is used, and Ag plastic powder having an average particle size of 5 to 100 μm is used as the metal powder in the plastic porous metal of Ag. As the water-soluble resin binder, methyl cellulose, hydroxypropyl methyl cellulose, hydroxyethyl methyl cellulose, carboxymethyl cellulose ammonium, ethyl cellulose or the like is used, and as the water-insoluble hydrocarbon organic solvent, neopentane, hexane, isohexane,
Heptane or the like is used. Further, a commercially available kitchen neutral synthetic detergent (for example, 28% mixed aqueous solution of alkyl glucoside and polyoxyethylene alkyl ether) is used as the surfactant, and ethylene glycol is used as the plasticizer.
Polyhydric alcohols such as polyethylene glycol and glycerin, fats and oils such as sardine oil, rapeseed oil and olive oil, ethers such as petroleum ether, diethyl phthalate, diN-butyl phthalate, diethylhexyl phthalate and di-N-phthalate.
Esters such as octyl are used.
【0008】金属粉含有スラリーを乾燥して発泡させる
工程は、金属粉含有スラリーを塗布した状態で、5〜1
00℃で0.25〜4時間保持して上記スラリー中の可
塑剤を揮発させて発泡させ、50〜200℃で30〜6
0分間保持し乾燥して上記スラリーを薄板状多孔質成形
体にする。発泡層を焼成する工程はこの多孔質成形体を
セラミック基板とともに所定の雰囲気中で500〜10
60℃で0.5〜4時間加熱して保持し、多孔質成形体
をスケルトン構造を有する気孔率90〜93%、厚さ
0.5〜5mmの薄板状多孔質焼結体にする。In the step of drying and foaming the metal powder-containing slurry, the metal powder-containing slurry is applied in an amount of 5-1.
Hold at 00 ° C. for 0.25 to 4 hours to volatilize and foam the plasticizer in the slurry, and at 30 to 6 at 50 to 200 ° C.
The slurry is held for 0 minutes and dried to form a thin plate-like porous molded body. In the step of firing the foamed layer, the porous molded body is sintered together with the ceramic substrate in a predetermined atmosphere for 500 to 10 times.
The porous molded body is heated at 60 ° C. for 0.5 to 4 hours and held to form a thin plate-shaped porous sintered body having a skeleton structure and a porosity of 90 to 93% and a thickness of 0.5 to 5 mm.
【0009】請求項6に係る発明は、上記(a)工程のセ
ラミック基板13上に回路パターンと同一のパターンを
有するAl又はCuからなる金属薄板14がろう材を介
して予め接着されたパワーモジュール用回路基板の製造
方法である。予め金属薄板を接着することにより金属粉
含有スラリーの塗布を容易にする。請求項7に係る発明
は、上記(b)工程が複数回繰返されるパワーモジュール
用回路基板の製造方法である。複数回スラリーを塗布し
乾燥させることにより可塑性多孔質金属の厚さを増加さ
せ、電流密度を増加させることができる。The invention according to claim 6 is a power module in which a metal thin plate 14 made of Al or Cu having the same pattern as a circuit pattern is pre-bonded to the ceramic substrate 13 in the step (a) through a brazing material. It is a manufacturing method of a circuit board for use. By adhering the metal thin plate in advance, the application of the metal powder-containing slurry is facilitated. The invention according to claim 7 is a method for manufacturing a circuit board for a power module, wherein the step (b) is repeated a plurality of times. By applying the slurry a plurality of times and drying it, the thickness of the plastic porous metal can be increased and the current density can be increased.
【0010】請求項8に係る発明は、上記(c)工程の後
に更に可塑性多孔質金属17からなる回路をシリコーン
ゲルで包囲するパワーモジュール用回路基板の製造方法
である。請求項9に係る発明は、上記(c)工程の後に更
に可塑性多孔質金属17からなる回路にシリコーングリ
ース、シリコーンオイル又はエポキシ樹脂を充填又は含
浸する工程を含むパワーモジュール用回路基板の製造方
法である。シリコーンゲル18で可塑性多孔質金属17
からなる回路を包囲すること、又はシリコーングリー
ス、シリコーンオイル若しくはエポキシ樹脂を充填又は
含浸することにより放熱特性を向上することができる。The invention according to claim 8 is a method for producing a circuit board for a power module, further comprising a circuit comprising a plastic porous metal 17 surrounded by silicone gel after the step (c). The invention according to claim 9 is a method for manufacturing a circuit board for a power module, which further comprises, after the step (c), a step of filling or impregnating a circuit composed of the plastic porous metal 17 with silicone grease, silicone oil or epoxy resin. is there. Silicone gel 18 with plastic porous metal 17
The heat dissipation characteristics can be improved by enclosing the circuit made of, or by filling or impregnating with silicone grease, silicone oil, or epoxy resin.
【0011】[0011]
【作用】図1に示されるパワーモジュール用回路基板1
0では、セラミック基板13と可塑性多孔質金属17か
らなる回路との熱膨張係数が異なっても、回路である可
塑性多孔質金属17がその熱変形を吸収するので、セラ
ミック基板13に反りや割れが発生するのを防止でき
る。また可塑性多孔質金属17にシリコーングリース、
シリコーンオイル又はエポキシ樹脂を充填又は含浸、若
しくは使用の際にこれら含浸することにより、可塑性多
孔質金属17での熱伝導率が向上するので、放熱特性を
損わない。Operation: Circuit board 1 for power module shown in FIG.
At 0, even if the thermal expansion coefficient of the ceramic substrate 13 and the circuit made of the plastic porous metal 17 are different, the plastic porous metal 17 that is the circuit absorbs the thermal deformation, so that the ceramic substrate 13 is not warped or cracked. It can be prevented from occurring. In addition, plastic porous metal 17 with silicone grease,
By filling or impregnating with a silicone oil or an epoxy resin, or by impregnating them with each other at the time of use, the thermal conductivity of the plastic porous metal 17 is improved, so that the heat dissipation characteristics are not impaired.
【0012】[0012]
【実施例】次に本発明の実施例を図面に基づいて詳しく
説明する。 <実施例1>図1に示すように、パワーモジュール用回
路基板10はセラミック基板13の表面に可塑性多孔質
金属17からなりかつセラミック基板13と異なる熱膨
張係数を有する回路を備える。セラミック基板13をA
l2O3含有量が96%のセラミック材料により縦、横及
び厚さがそれぞれ30mm、70mm及び0.635m
mの長方形の薄板状に形成した。可塑性多孔質金属17
となる金属粉含有スラリーを平均粒径40μmのCu粉
80gと、水溶性メチルセルロース樹脂バインダ2.5
gと、グリセリン5gと、界面活性剤0.5gと、水2
0gとを30分間混練した後、ヘキサンを1g添加して
更に3分間混練することにより調製した。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described in detail with reference to the drawings. <Embodiment 1> As shown in FIG. 1, a power module circuit board 10 includes a circuit made of a plastic porous metal 17 on a surface of a ceramic substrate 13 and having a coefficient of thermal expansion different from that of the ceramic substrate 13. A ceramic substrate 13
Ceramic material with 96% l 2 O 3 content has length, width and thickness of 30 mm, 70 mm and 0.635 m, respectively.
It was formed in a rectangular thin plate shape of m. Plastic porous metal 17
80 g of Cu powder having an average particle size of 40 μm and a water-soluble methylcellulose resin binder 2.5
g, glycerin 5 g, surfactant 0.5 g, water 2
It was prepared by kneading with 0 g for 30 minutes, then adding 1 g of hexane and kneading for 3 minutes.
【0013】セラミック基板13の表面に金属粉含有ス
ラリーを所定の厚さで所定の回路パターンとなるように
塗布した。この状態で、温度40℃に30分間保持して
上記スラリー中のヘキサンを揮発させて発泡させた後、
温度90℃に40分間保持し乾燥して上記スラリーを薄
板状多孔質成形体からなる発泡層を形成した。この発泡
層の表面に更に金属粉含有スラリーを所定の厚さで同一
の回路パターンとなるように塗布し、再び同一条件で乾
燥させて薄板状多孔質成形体からなる発泡層を形成し
た。このような操作を3回繰返して3層に積層した発泡
層を得た。次にこの積層した発泡層をセラミック基板と
ともに空気中で500℃に0.5時間加熱して保持した
後、水素中で1030℃に1時間加熱して保持し、積層
した発泡層をスケルトン構造を有する気孔率92〜95
%、厚さ4.5mmの板状の多孔質焼結体にした。更に
この多孔質焼結体をセラミック基板とともに圧延して多
孔質焼結体の厚さを1.5mmにすることにより、金属
粉含有スラリーから気孔率30%の可塑性多孔質金属1
7からなる回路を形成した。またこの可塑性多孔質金属
17の気孔に金属17の側面からシリコーングリースを
充填した。このようにしてパワーモジュール用回路基板
10を得た。A slurry containing metal powder was applied to the surface of the ceramic substrate 13 in a predetermined thickness to form a predetermined circuit pattern. In this state, the temperature is kept at 40 ° C. for 30 minutes to evaporate hexane in the slurry to foam,
The slurry was held at a temperature of 90 ° C. for 40 minutes and dried to form a foam layer composed of a thin plate-like porous molded body. A metal powder-containing slurry was further applied to the surface of this foam layer so as to have the same circuit pattern with a predetermined thickness, and dried again under the same conditions to form a foam layer made of a thin plate-shaped porous molded body. Such an operation was repeated 3 times to obtain a foamed layer laminated in 3 layers. Next, this laminated foam layer was heated to 500 ° C. in air for 0.5 hours and held together with the ceramic substrate, and then heated to 1030 ° C. in hydrogen for 1 hour and held to form the laminated foam layer into a skeleton structure. Porosity having 92-95
%, And a plate-like porous sintered body having a thickness of 4.5 mm. Further, this porous sintered body is rolled together with a ceramic substrate to make the thickness of the porous sintered body 1.5 mm, so that the plastic porous metal 1 having a porosity of 30% can be obtained from the slurry containing metal powder.
A circuit consisting of 7 was formed. The pores of the plastic porous metal 17 were filled with silicone grease from the side surface of the metal 17. Thus, the power module circuit board 10 was obtained.
【0014】<実施例2>図示しないが、可塑性多孔質
金属となる金属粉含有スラリーを平均粒径40μmのA
g粉100gと、水溶性メチルセルロース樹脂バインダ
2.5gと、グリセリン5gと、界面活性剤0.5g
と、水20gとを30分間混練した後、ヘキサンを1g
添加して更に3分間混練することにより調製した。この
金属粉含有スラリーを実施例1と同一のセラミック基板
に所定の厚さで所定の回路パターンとなるように塗布
し、温度40℃に30分間保持して上記スラリー中のヘ
キサンを揮発させて発泡させた後、温度90℃に40分
間保持し乾燥して上記スラリーを薄板状多孔質成形体か
らなる発泡層を形成した。この発泡層の表面に更に金属
粉含有スラリーを所定の厚さで同一の回路パターンとな
るように塗布し、再び同一条件で乾燥させて薄板状多孔
質成形体からなる発泡層を形成した。このような操作を
3回繰返して3層に積層した発泡層を得た。次にこの積
層した発泡層をセラミック基板とともに空気中で900
℃に3時間加熱して保持し、積層した発泡層をスケルト
ン構造を有する気孔率90〜93%、厚さ4.5mmの
薄板状多孔質焼結体にした。更にこの多孔質焼結体をセ
ラミック基板及とともに圧延して多孔質焼結体の厚さを
1.5mmにすることにより、金属粉含有スラリーから
気孔率30%の可塑性多孔質金属からなる回路を形成し
た。<Embodiment 2> Although not shown, a metal powder-containing slurry, which is a plastic porous metal, is mixed with A having an average particle size of 40 μm.
100 g of powder, 2.5 g of water-soluble methyl cellulose resin binder, 5 g of glycerin, and 0.5 g of surfactant
And 20 g of water are kneaded for 30 minutes, and then 1 g of hexane
It was prepared by adding and kneading for 3 minutes. This metal powder-containing slurry was applied to the same ceramic substrate as in Example 1 so as to have a predetermined circuit pattern with a predetermined thickness and kept at a temperature of 40 ° C. for 30 minutes to volatilize hexane in the slurry to foam. After that, the temperature was maintained at 90 ° C. for 40 minutes and drying was performed to form the foamed layer of the above-mentioned slurry into a thin plate-shaped porous molded body. A metal powder-containing slurry was further applied to the surface of this foam layer so as to have the same circuit pattern with a predetermined thickness, and dried again under the same conditions to form a foam layer made of a thin plate-shaped porous molded body. Such an operation was repeated 3 times to obtain a foamed layer laminated in 3 layers. Next, this laminated foam layer is put together with a ceramic substrate in air at 900
The laminated foam layer was made into a thin plate-like porous sintered body having a skeleton structure and a porosity of 90 to 93% and a thickness of 4.5 mm, by heating and holding at 3 ° C. for 3 hours. Further, by rolling this porous sintered body together with a ceramic substrate and making the thickness of the porous sintered body 1.5 mm, a circuit made of a plastic porous metal having a porosity of 30% is formed from a slurry containing metal powder. Formed.
【0015】<実施例3>図示しないが、可塑性多孔質
金属となる金属粉含有スラリーを平均粒径25μmのA
l粉50gと、平均粒径9μmのCu粉1.2gと、水
溶性メチルセルロース樹脂バインダ2.5gと、グリセ
リン5gと、界面活性剤0.5gと、水20gとを30
分間混練した後、ヘキサンを1g添加して更に3分間混
練することにより調製した。この金属粉含有スラリーを
実施例1と同一のセラミック基板に所定の回路パターン
となるように塗布し、温度40℃に30分間保持して上
記スラリー中のヘキサンを揮発させて発泡させた後、温
度90℃に40分間保持し乾燥して上記スラリーを薄板
状多孔質成形体からなる発泡層を形成した。この発泡層
の表面に更に金属粉含有スラリーを所定の厚さで同一の
回路パターンとなるように塗布し、再び同一条件で乾燥
させて薄板状多孔質成形体からなる発泡層を形成した。
このような操作を3回繰返して3層に積層した発泡層を
得た。次にこの積層した発泡層をセラミック基板ととも
に真空中で600℃に1時間加熱して保持し、積層した
発泡層をスケルトン構造を有する気孔率93〜96%、
厚さ4.5mmの薄板状多孔質焼結体にした。更にこの
多孔質焼結体をセラミック基板とともに圧延して多孔質
焼結体の厚さを1.5mmにすることにより、金属粉含
有スラリーから気孔率30%の可塑性多孔質金属からな
る回路を形成した。<Embodiment 3> Although not shown, a metal powder-containing slurry, which is a plastic porous metal, is mixed with A having an average particle size of 25 μm.
50 g of 1 powder, 1.2 g of Cu powder having an average particle size of 9 μm, 2.5 g of a water-soluble methylcellulose resin binder, 5 g of glycerin, 0.5 g of a surfactant, and 20 g of water, 30 g.
After kneading for 1 minute, 1 g of hexane was added and kneading was continued for 3 minutes to prepare. This metal powder-containing slurry was applied to the same ceramic substrate as in Example 1 so as to form a predetermined circuit pattern, and the temperature was maintained at 40 ° C. for 30 minutes to volatilize hexane in the slurry to foam and then The slurry was held at 90 ° C. for 40 minutes and dried to form a foam layer made of the thin plate-like porous molded body. A metal powder-containing slurry was further applied to the surface of this foam layer so as to have the same circuit pattern with a predetermined thickness, and dried again under the same conditions to form a foam layer made of a thin plate-shaped porous molded body.
Such an operation was repeated 3 times to obtain a foamed layer laminated in 3 layers. Next, the laminated foam layer is heated together with the ceramic substrate at 600 ° C. in a vacuum for 1 hour and held, and the laminated foam layer has a skeleton structure and a porosity of 93 to 96%.
It was a thin plate-like porous sintered body having a thickness of 4.5 mm. Further, by rolling this porous sintered body together with a ceramic substrate to make the thickness of the porous sintered body 1.5 mm, a circuit made of a plastic porous metal having a porosity of 30% is formed from a slurry containing metal powder. did.
【0016】<実施例4>図2に示すように、この例の
パワーモジュール用回路基板40では、セラミック基板
13の表面に回路パターンと同一のパターンを有する厚
さ0.1mmのAlからなる金属薄板14がAl−Si
ろう材により予め接着され、その金属薄板上に実施例3
と同一である3層の薄板状多孔質成形体からなる可塑性
多孔質金属17を成形した。即ち、セラミック基板13
の表面に実施例3で説明した可塑性多孔質金属からなる
回路をAlからなる金属薄板14を介してそれぞれ形成
した。 <実施例5〜7>図示しないが、実施例5〜7では、セ
ラミック基板の表面に回路パターンと同一のパターンを
有する厚さ0.1mmのCuからなる金属薄板がDBC
法により予め接着され、その金属薄板上に実施例1〜3
とそれぞれ同一である3層の薄板状多孔質成形体からな
る可塑性多孔質金属を成形した。即ち、セラミック基板
の表面に回路パターンと同一のパターンを有しかつCu
からなる金属薄板を重ねた状態でこれに荷重2.0kg
f/cm2を加え、N2雰囲気中で1065℃に加熱する
ことにより接着し、更にその表面に実施例1〜3でそれ
ぞれ説明した可塑性多孔質金属からなる回路をそれぞれ
形成した。 <実施例8〜14>図示しないが、実施例8〜14で
は、セラミック基板をAlNにより形成したことを除い
て、構成は実施例1〜7とそれぞれ同一である。但し、
予めセラミック基板を1300℃で酸化処理してその表
面にAl2O3層を最適な厚さで形成しておいた。<Embodiment 4> As shown in FIG. 2, in the power module circuit board 40 of this example, a metal made of Al having a thickness of 0.1 mm and having the same pattern as the circuit pattern on the surface of the ceramic substrate 13. Thin plate 14 is Al-Si
Preliminarily adhered with a brazing material, and then the third embodiment is placed on the thin metal plate.
A plastic porous metal 17 composed of a three-layer thin plate-shaped porous molded body identical to the above was molded. That is, the ceramic substrate 13
A circuit made of the plastic porous metal described in Example 3 was formed on the surface of each of them through the metal thin plate 14 made of Al. <Examples 5 to 7> Although not shown, in Examples 5 to 7, a metal thin plate made of Cu having a thickness of 0.1 mm and having the same pattern as the circuit pattern on the surface of the ceramic substrate is DBC.
Pre-bonded by the method of Example 1-3 on the thin metal plate.
A plastic porous metal composed of three layers of thin plate-like porous molded bodies, which are respectively the same as the above, was molded. That is, the surface of the ceramic substrate has the same pattern as the circuit pattern, and Cu
Loaded with a thin metal plate consisting of
f / cm 2 was added, and the mixture was heated to 1065 ° C. in an N 2 atmosphere for adhesion, and circuits formed of the plastic porous metal described in each of Examples 1 to 3 were formed on the surface. <Examples 8 to 14> Although not shown, Examples 8 to 14 have the same configurations as Examples 1 to 7, respectively, except that the ceramic substrate is made of AlN. However,
The ceramic substrate was previously oxidized at 1300 ° C. and an Al 2 O 3 layer was formed on the surface of the ceramic substrate with an optimum thickness.
【0017】<比較例1>図示しないが、実施例1の可
塑性多孔質金属と同一の電流密度を有する厚さ0.5m
mのCuからなる回路基板をAl2O3焼結体からなるセ
ラミック基板上に接着した構成のパワーモジュール用回
路基板を比較例1とした。即ちパワーモジュール用回路
基板はセラミック基板の上面にDBC法によりそれぞれ
直接接着された回路基板を備える。 <比較例2>図示しないが、実施例1の可塑性多孔質金
属と同一の電流密度を有する厚さ0.7mmのAlから
なる回路基板をAl2O3焼結体からなるセラミック基板
上に接着した構成のパワーモジュール用回路基板を比較
例2とした。即ちパワーモジュール用回路基板はセラミ
ック基板とAlからなる回路基板との間にろう材である
Al−Siろう材の箔を挟んだ状態でこれらに荷重0.
5〜2kgf/cm2を加え、真空中で600〜650
℃に加熱することにより、回路基板がセラミック基板に
積層接着される。上記実施例1〜16及び比較例1及び
2の内容を表1に示す。<Comparative Example 1> Although not shown, a thickness of 0.5 m having the same current density as that of the plastic porous metal of Example 1
Comparative Example 1 was a circuit board for a power module, in which a circuit board made of Cu of m was adhered to a ceramic board made of an Al 2 O 3 sintered body. That is, the power module circuit board includes circuit boards directly bonded to the upper surface of the ceramic board by the DBC method. <Comparative Example 2> Although not shown, a circuit board made of Al and having the same current density as that of the plastic porous metal of Example 1 and having a thickness of 0.7 mm was adhered onto a ceramic substrate made of an Al 2 O 3 sintered body. The power module circuit board having the above-described configuration was used as Comparative Example 2. That is, a circuit board for a power module is such that a foil of Al—Si brazing material, which is a brazing material, is sandwiched between a ceramic substrate and a circuit board made of Al and a load of 0.
5 ~ 2kgf / cm 2 added, 600 ~ 650 in vacuum
The circuit board is laminated and adhered to the ceramic board by being heated to ℃. Table 1 shows the contents of Examples 1 to 16 and Comparative Examples 1 and 2.
【0018】[0018]
【表1】 [Table 1]
【0019】<比較試験と評価>実施例1〜14及び比
較例1及び2のパワーモジュール用回路基板に−40℃
〜125℃の温度サイクル条件で0サイクル(温度サイ
クルを全く与えない)、10サイクル及び50サイクル
の温度サイクルを与えた後の熱抵抗及びセラミック基板
の割れについてそれぞれ調べた。熱抵抗Rth(℃)は、
図示しないが、回路基板の裏に70×30mmフィン高
さ35mmの放熱フィンをグリースにより取付け、更に
回路上に縦及び横とも15mmの矩形の発熱体を2個P
b−Snはんだを介して接着し、この発熱体を10Wで
発熱させたときの周囲空気温度Ta(℃)と発熱体の温
度Tj(℃)とを測定して式より求めた。 Rth=(Tj−Ta)/10 …… またセラミック基板の割れ率Cr(%)はセラミック基
板から可塑性多孔質金属からなる回路をエッチングして
全て剥がし、顕微鏡で積層接着された回路周囲の割れの
長さLc(mm)とエッチング前の回路の全周長さL
a(mm)を測定して式より求めた。 Cr=(Lc/La)×100 …… これらの結果を表2に示す。<Comparative Test and Evaluation> The circuit boards for power modules of Examples 1 to 14 and Comparative Examples 1 and 2 were -40 ° C.
The thermal resistance and the cracking of the ceramic substrate after the temperature cycle of 0 cycle (no temperature cycle was given), 10 cycles and 50 cycles under the temperature cycle condition of ˜125 ° C. were examined, respectively. The thermal resistance R th (° C) is
Although not shown, a heat radiation fin of 70 × 30 mm and a fin height of 35 mm is attached to the back of the circuit board with grease, and two rectangular heating elements of 15 mm both vertically and horizontally are arranged on the circuit.
The ambient air temperature T a (° C.) and the temperature T j (° C.) of the heating element when the heating element was heated at 10 W and adhered via b-Sn solder were measured and determined from the equation. R th = (T j −T a ) / 10 ... Further, the cracking ratio C r (%) of the ceramic substrate is obtained by etching the circuit made of the plastic porous metal from the ceramic substrate and peeling it off, and the circuit is laminated and adhered by a microscope. Perimeter crack length L c (mm) and total circuit length L before etching
a (mm) was measured and calculated from the formula. C r = (L c / L a ) × 100 ... The results are shown in Table 2.
【0020】[0020]
【表2】 [Table 2]
【0021】表2から明らかなように、割れ率は実施例
の方が従来例より著しく低くなっていることが判った。
また熱抵抗は50サイクルでは実施例の方が比較例より
良くなっていることが判った。As is clear from Table 2, it was found that the cracking rate of the example was significantly lower than that of the conventional example.
It was also found that the thermal resistance of the example was better than that of the comparative example at 50 cycles.
【0022】[0022]
【発明の効果】以上述べたように、本発明によれば、セ
ラミック基板に可塑性多孔質金属からなる回路を形成し
たので、可塑性多孔質金属が熱変形を吸収してセラミッ
ク基板の反りや割れを防止できる。また、可塑性多孔質
金属が熱変形を吸収する結果セラミック基板を薄くする
ことが可能になり、パワーモジュール用回路基板を小型
にかつ比較的軽くすることができる。更に、可塑性多孔
質金属が気孔率20〜50%のCu,Al又はAgの多
孔質焼結体であり、この可塑性多孔質金属にシリコーン
グリース、シリコーンオイル又はエポキシ樹脂を充填又
は含浸、若しくは使用の際にこれら含浸することによ
り、可塑性多孔質金属からなる回路からセラミック基板
への放熱特性を損うことがない。As described above, according to the present invention, since the circuit made of the plastic porous metal is formed on the ceramic substrate, the plastic porous metal absorbs the thermal deformation and warps or cracks of the ceramic substrate. It can be prevented. Further, since the plastic porous metal absorbs thermal deformation, the ceramic substrate can be made thin, and the power module circuit substrate can be made small and relatively lightweight. Further, the plastic porous metal is a porous sintered body of Cu, Al or Ag having a porosity of 20 to 50%, and the plastic porous metal is filled or impregnated with silicone grease, silicone oil or epoxy resin, or used. At this time, by impregnating these with each other, the heat radiation characteristic from the circuit made of the plastic porous metal to the ceramic substrate is not impaired.
【図1】本発明実施例1のパワーモジュール用回路基板
の断面図。FIG. 1 is a cross-sectional view of a power module circuit board according to a first embodiment of the present invention.
【図2】本発明の実施例4を示す図1に対応する断面
図。FIG. 2 is a sectional view corresponding to FIG. 1, showing a fourth embodiment of the present invention.
【図3】その使用状態を示す図1に対応する断面図。FIG. 3 is a cross-sectional view corresponding to FIG. 1 showing its usage state.
10,40 パワーモジュール用回路基板 13 セラミック基板 14 金属薄板 17 可塑性多孔質金属 10,40 Power module circuit board 13 Ceramic board 14 Metal thin plate 17 Plastic porous metal
───────────────────────────────────────────────────── フロントページの続き (72)発明者 初鹿 昌文 埼玉県大宮市北袋町1丁目297番地 三菱 マテリアル株式会社総合研究所内 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Masafumi Hatsuka 1-297 Kitabukurocho, Omiya City, Saitama Prefecture Mitsubishi Materials Research Institute
Claims (9)
ミック基板(13)上に可塑性多孔質金属(17)からなる回路
が形成されたパワーモジュール用回路基板。1. A circuit board for a power module in which a circuit made of a plastic porous metal (17) is formed on a ceramic substrate (13) made of an Al 2 O 3 or AlN sintered body.
ミック基板(13)上に回路を構成するAl又はCuからな
る金属薄板(14)が接着され、前記金属薄板(14)上に可塑
性多孔質金属(17)が積層されたパワーモジュール用回路
基板。2. A thin metal plate (14) made of Al or Cu forming a circuit is adhered onto a ceramic substrate (13) made of a sintered Al 2 O 3 or AlN, and plasticity is provided on the thin metal plate (14). A circuit board for power modules in which porous metal (17) is laminated.
リコーンゲル(18)で包囲された請求項1又は2記載のパ
ワーモジュール用回路基板。3. The circuit board for a power module according to claim 1, wherein the circuit made of a plastic porous metal (17) is surrounded by a silicone gel (18).
リコーングリース、シリコーンオイル又はエポキシ樹脂
が充填又は含浸された請求項1又は2記載のパワーモジ
ュール用回路基板。4. The circuit board for a power module according to claim 1, wherein the circuit made of the plastic porous metal (17) is filled or impregnated with silicone grease, silicone oil or epoxy resin.
Al又はAgからなる金属粉と、水溶性樹脂バインダ
と、非水溶性炭化水素系有機溶剤と、界面活性剤と、可
塑剤と、水とを含む金属粉含有スラリーをAl2O3又は
AlN焼結体からなるセラミック基板(13)上に所定の回
路パターンとなるように塗布し乾燥して発泡させる工程
と、 (b) 前記回路パターンと同一のパターンにより前記発泡
層上に前記スラリーを塗布し乾燥して発泡させる工程
と、 (c) 前記積層した発泡層を焼成して可塑性多孔質金属か
らなる回路を前記セラミック基板(13)上に形成する工程
とを含むパワーモジュール用回路基板の製造方法。5. (a) Cu having an average particle size of 5 to 100 μm,
A metal powder-containing slurry containing a metal powder made of Al or Ag, a water-soluble resin binder, a water-insoluble hydrocarbon organic solvent, a surfactant, a plasticizer, and water is burned with Al 2 O 3 or AlN. Applying a predetermined circuit pattern on a ceramic substrate (13) made of a bonded body, and drying and foaming; (b) applying the slurry on the foamed layer in the same pattern as the circuit pattern. A method for producing a circuit board for a power module, which includes a step of drying and foaming, and (c) a step of firing the laminated foamed layer to form a circuit made of a plastic porous metal on the ceramic substrate (13). .
パターンと同一のパターンを有するAl又はCuからな
る金属薄板(14)がろう材を介して予め接着された請求項
5記載のパワーモジュール用回路基板の製造方法。6. The thin metal plate (14) made of Al or Cu having the same pattern as the circuit pattern is previously adhered to the ceramic substrate (13) in the step (a) through a brazing material. Manufacturing method of circuit board for power module.
は6記載のパワーモジュール用回路基板の製造方法。7. The method for manufacturing a circuit board for a power module according to claim 5, wherein the step (b) is repeated a plurality of times.
7)からなる回路をシリコーンゲルで包囲する請求項5な
いし7いずれか記載のパワーモジュール用回路基板の製
造方法。8. A plastic porous metal (1) is further added after the step (c).
8. The method for manufacturing a circuit board for a power module according to claim 5, wherein the circuit consisting of 7) is surrounded by silicone gel.
7)からなる回路にシリコーングリース、シリコーンオイ
ル又はエポキシ樹脂を充填又は含浸する工程を含む請求
項5ないし7いずれか記載のパワーモジュール用回路基
板の製造方法。9. A plastic porous metal (1) is further added after the step (c).
8. The method for manufacturing a circuit board for a power module according to claim 5, further comprising the step of filling or impregnating the circuit consisting of 7) with silicone grease, silicone oil or epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20303295A JP3166819B2 (en) | 1995-08-09 | 1995-08-09 | Power module circuit board and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20303295A JP3166819B2 (en) | 1995-08-09 | 1995-08-09 | Power module circuit board and method of manufacturing the same |
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| Publication Number | Publication Date |
|---|---|
| JPH0951151A true JPH0951151A (en) | 1997-02-18 |
| JP3166819B2 JP3166819B2 (en) | 2001-05-14 |
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ID=16467225
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|---|---|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100433391C (en) * | 2006-11-30 | 2008-11-12 | 何永祥 | A high-power light-emitting diode using a porous metal material as a heat sink |
| KR20160067119A (en) * | 2013-10-07 | 2016-06-13 | 후루카와 덴키 고교 가부시키가이샤 | Joining structure and electronic member-joining structural body |
-
1995
- 1995-08-09 JP JP20303295A patent/JP3166819B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100433391C (en) * | 2006-11-30 | 2008-11-12 | 何永祥 | A high-power light-emitting diode using a porous metal material as a heat sink |
| KR20160067119A (en) * | 2013-10-07 | 2016-06-13 | 후루카와 덴키 고교 가부시키가이샤 | Joining structure and electronic member-joining structural body |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3166819B2 (en) | 2001-05-14 |
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