JPH0964462A - Surface emitting laser device and its manufacture - Google Patents
Surface emitting laser device and its manufactureInfo
- Publication number
- JPH0964462A JPH0964462A JP7237833A JP23783395A JPH0964462A JP H0964462 A JPH0964462 A JP H0964462A JP 7237833 A JP7237833 A JP 7237833A JP 23783395 A JP23783395 A JP 23783395A JP H0964462 A JPH0964462 A JP H0964462A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- surface emitting
- emitting laser
- conductivity
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 229910000679 solder Inorganic materials 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000002955 isolation Methods 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010931 gold Substances 0.000 abstract description 5
- 229910052737 gold Inorganic materials 0.000 abstract description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- 230000010287 polarization Effects 0.000 description 15
- 238000005253 cladding Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1089—Unstable resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
- H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、面発光レーザ基板
を支持基板（サブキャリア）上に搭載してなる面発光レ
ーザ装置およびその製造方法に関し、特に偏光方向を揃
えることのできる面発光レーザ装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface emitting laser device in which a surface emitting laser substrate is mounted on a supporting substrate (subcarrier) and a method for manufacturing the same, and more particularly to a surface emitting laser device capable of aligning polarization directions. It is about.
【０００２】[0002]
【従来の技術】光コンピューティング、光スイッチング
に関する関心が高まるなかで、大量の処理が可能な、２
次元的な光処理・接続システムの構築に向けて研究・開
発が活発化している。この用途に適した発光デバイスと
して面発光レーザがある。端面出射型レーザでは集積化
が困難であるため、電気的な配線の関係で並列配置され
る素子数が制限を受ける可能性が高いが、面発光レーザ
では、集積化が容易であるため、多数の発光素子の２次
元配列を容易に構成できるからである。この場合に、発
光素子を、偏光スイッチ用やコヒーレント通信のような
偏光ビームを必要とする用途に用いるのであれば、面発
光レーザの偏光を制御することが必要となる。2. Description of the Related Art As interest in optical computing and optical switching has increased, a large amount of processing can be performed.
Research and development has been actively pursued for the construction of dimensional optical processing and connection systems. A surface emitting laser is a light emitting device suitable for this purpose. Since it is difficult to integrate the edge emitting laser, it is likely that the number of elements arranged in parallel is limited due to electrical wiring. However, since the surface emitting laser is easy to integrate, many This is because a two-dimensional array of the light emitting elements can be easily configured. In this case, if the light emitting element is used for a polarization switch or an application requiring a polarized beam such as coherent communication, it is necessary to control the polarization of the surface emitting laser.
【０００３】面発光レーザの偏光方向を制御する方法の
１例が、吉川他により１９９４年秋季応用物理学会学術
講演会予稿集 ２２ｐ−Ｓ−５に報告されている。その
断面図を図３に示す。この面発光レーザでは、ｎ型Ｇａ
Ａｓ基板１の上に、ｎ型多層反射膜２、ｎ型Ａｌ0.3 Ｇ
ａ0.7 Ａｓクラッド層３ａ、Ｉｎ0.2 Ｇａ0.8 Ａｓ活性
層４、ｐ型Ａｌ0.3 Ｇａ0.7 Ａｓクラッド層５ａ、ｐ型
多層反射膜６からなる多層膜がエピタキシャル成長され
ており、ｐ型多層反射膜６は、長方形メサ１５に加工さ
れ、この長方形メサはｐ側電極７によって覆われてい
る。レーザ素子は各メサごとに形成されるが、各素子間
の分離は長方形メサ１５、ｐ側電極７をマスクとしたイ
オン注入で形成された高抵抗領域８により行われる。ま
た、ｎ側電極９は、ｎ型多層反射膜２に到達するように
エピタキシャル層に開設されたトレンチの底部に形成さ
れている。An example of a method for controlling the polarization direction of a surface emitting laser is reported by Yoshikawa et al. In Proceedings 22p-S-5 of the 1994 Autumn Meeting of the Society of Applied Physics. The sectional view is shown in FIG. In this surface emitting laser, n-type Ga is used.
On As substrate 1, n-type multilayer reflective film 2, n-type Al 0.3 G
The multilayer film including the a 0.7 As clad layer 3a, the In 0.2 Ga 0.8 As active layer 4, the p-type Al 0.3 Ga 0.7 As clad layer 5a, and the p-type multilayer reflective film 6 is epitaxially grown. , Rectangular mesa 15 is covered with the p-side electrode 7. The laser element is formed for each mesa, but the elements are separated by the rectangular mesa 15 and the high resistance region 8 formed by ion implantation using the p-side electrode 7 as a mask. The n-side electrode 9 is formed at the bottom of the trench formed in the epitaxial layer so as to reach the n-type multilayer reflective film 2.
【０００４】このように形成された面発光レーザでは、
各長方形メサ１５において、短辺および長辺に平行な振
動面をもつ光が発振可能であるが振動方向が短辺に平行
な偏光の方が損失が大きいため、長辺に平行な振動面を
もつ偏光が出射されることになる。In the surface emitting laser thus formed,
In each of the rectangular mesas 15, light having an oscillating surface parallel to the short side and the long side can be oscillated, but polarized light whose oscillating direction is parallel to the short side causes a larger loss, so that the oscillating surface parallel to the long side is generated. That polarized light will be emitted.
【０００５】また、このような横モードの異方性を用い
た方法とは別に、活性層に歪みを持たせることで偏光方
向の制御を行おうとする試みも行われており、その１例
が沼居他により１９９３年春季応用物理学関係連合講演
会予稿集 ２９ａ−Ｃ−３に報告されている。この方法
では、（１１１）方向に数度ＯＦＦした（１００）Ｇａ
Ａｓ基板上に結晶成長させることで活性層部分に歪みを
加え、偏光方向を制御することを意図している。In addition to such a method using the transverse mode anisotropy, an attempt has been made to control the polarization direction by imparting strain to the active layer. Numai et al. Reported in Proceedings 29a-C-3 of the 1993 Joint Lecture on Applied Physics. In this method, (100) Ga turned off several times in the (111) direction.
It is intended to control the polarization direction by adding strain to the active layer portion by growing the crystal on the As substrate.
【０００６】[0006]
【発明が解決しようとする課題】上述した面発光レーザ
の内、活性層部分に歪みを加える前者の方法では、歪み
の程度が小さく高い偏光比（出射光のうち所望の方向の
偏光成分の占める割合）の偏光を得ることが困難であっ
た。Among the above-mentioned surface-emitting lasers, the former method of applying strain to the active layer portion is such that the degree of distortion is small and the polarization ratio is high (polarization components in the desired direction account for the emitted light. It was difficult to obtain the polarized light of the ratio.
【０００７】また、前者の長方形メサを用いる方法で
は、１００％近い偏光比を得ることも可能であるが、高
い偏光比を実現するにはメサの短辺を５μｍ以下としな
ければならないところ、長方形をこのような微細な形状
に加工した場合には、メサ部分とそれより下部の部分の
間の光伝搬ロスが増加し、結果として、発光効率が落ち
てしまうという問題があった。また、この従来例では微
細なメサ構造を必要とするという加工上の難点もあっ
た。したがって、本発明の解決すべき課題は、発光効率
を低下させることなく、高い偏光比の偏光を出射しうる
面発光レーザを提供しうるようにすることである。In the former method using a rectangular mesa, it is possible to obtain a polarization ratio close to 100%, but in order to realize a high polarization ratio, the short side of the mesa must be 5 μm or less. When processed into such a fine shape, there was a problem that the light propagation loss between the mesa portion and the portion below the mesa portion increased, and as a result, the light emission efficiency decreased. Further, this conventional example also has a processing difficulty that a fine mesa structure is required. Therefore, the problem to be solved by the present invention is to provide a surface emitting laser capable of emitting polarized light with a high polarization ratio without lowering the luminous efficiency.
【０００８】[0008]
【課題を解決するための手段】上記の課題を解決するた
めの本発明による面発光レーザ装置は、第１導電型半導
体基板（１）と、その上に形成された第１導電型クラッ
ド層（３）、活性層（４）および第２導電型クラッド層
（５）とを有し、前記第１導電型半導体基板側から光を
放出する面発光レーザ素子（１０）が少なくとも１個形
成されている面発光レーザ基板（２０）が、前記第１導
電型半導体基板側を上にして支持基板（１２）上に搭載
されているものであって、前記面発光レーザ基板上に形
成された第２導電型側の電極（７、１１）が支持基板上
に形成された基板電極（１３）に半田（１４）を介して
接続されており、かつ、前記支持基板上に形成された複
数の凸部（１２ａ）が前記面発光レーザ基板に当接して
いることを特徴としている。A surface emitting laser device according to the present invention for solving the above-mentioned problems includes a first conductivity type semiconductor substrate (1) and a first conductivity type clad layer (1) formed thereon. 3), an active layer (4) and a second conductivity type cladding layer (5), and at least one surface emitting laser element (10) for emitting light from the first conductivity type semiconductor substrate side is formed. A surface emitting laser substrate (20) mounted on a support substrate (12) with the first conductivity type semiconductor substrate side facing up, and a second surface emitting laser substrate formed on the surface emitting laser substrate. Electrodes (7, 11) on the conductivity type side are connected to substrate electrodes (13) formed on a supporting substrate via solder (14), and a plurality of convex portions formed on the supporting substrate. (12a) is in contact with the surface emitting laser substrate, To have.
【０００９】[0009]
【作用】本発明の面発光レーザ装置は、面発光レーザ基
板を支持基板（サブキャリア）上に半田リフローを用い
て搭載することによって形成される。この半田リフロー
時に溶融半田の表面張力により、サブキャリア上に設け
られた凸部に面発光レーザ基板が当接することにより面
発光レーザ基板に歪みが導入される。続く、半田冷却時
の半田収縮により面発光レーザ基板により大きな歪みが
導入され、これにより偏光が制御される。歪みの量は、
凸部の高さと半田の量／材質をコントロールすることに
より任意にかつ精度よく制御することができる。また、
本発明においては、メサを形成する必要がなく、メサを
形成する場合にも微細なメサを形成する必要がないの
で、不必要な伝搬ロスを招かないようにすることができ
る。The surface emitting laser device of the present invention is formed by mounting the surface emitting laser substrate on the supporting substrate (subcarrier) using solder reflow. During this solder reflow, the surface tension of the molten solder causes the surface emitting laser substrate to come into contact with the convex portion provided on the subcarrier, so that the surface emitting laser substrate is distorted. Subsequent contraction of the solder during cooling of the solder introduces a large amount of distortion into the surface-emitting laser substrate, thereby controlling the polarization. The amount of distortion is
By controlling the height of the convex portion and the amount / material of solder, it is possible to control arbitrarily and accurately. Also,
In the present invention, it is not necessary to form a mesa, and it is not necessary to form a fine mesa when forming a mesa, so that unnecessary propagation loss can be prevented.
【００１０】[0010]
【発明の実施の形態】次に、本発明の実施の形態につい
て図面を参照して詳細に説明する。図１は、本発明の一
実施形態を示す断面図である。サブキャリア１２は、熱
伝導性のよいの窒化アルミニウム板（１ｍｍ厚）を用
い、サイズ８ｍｍ角に切り出し、その後、高さ８５μｍ
の凸部１２ａが残るように、表面を機械加工して形成し
たものである。さらに、各レーザ素子ごとに独立に給電
できるように配線（図示なし）およびキャリア電極１３
を形成しキャリア電極１３の上に高さ８０μｍの半田バ
ンプ（１４ａ）を形成する。BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a sectional view showing an embodiment of the present invention. For the subcarrier 12, an aluminum nitride plate (1 mm thick) having good thermal conductivity is used, cut out into a size of 8 mm square, and then a height of 85 μm.
The surface is machined so as to leave the convex portions 12a. Furthermore, wiring (not shown) and carrier electrode 13 are provided so that power can be independently supplied to each laser element.
Then, a solder bump (14a) having a height of 80 μm is formed on the carrier electrode 13.
【００１１】面発光レーザは、ｎ型ＧａＡｓ基板１の上
へ順に、バッファ層（図示なし）、ｎ型多層反射膜２、
ｎ型Ａｌ0.25Ｇａ0.75Ａｓクラッド層３、Ｉｎ0.2 Ｇａ
0.8Ａｓ活性層４、ｐ型Ａｌ0.25Ｇａ0.75Ａｓクラッド
層５、ｐ型多層反射膜６、キャップ層（図示なし）、を
順次成長させたウェハを用いて形成する。エピタキシャ
ル成長層の具体的データは次の通りである。 ｎ型ＧａＡｓ基板１： ｎ ２×１０18 バッファ層： ＧａＡｓ ｎ ２×１０18 ４００ｎｍ ｎ型多層反射膜： ＡｌＡｓ ｎ ２×１０18 ８３ｎｍ ＧａＡｓ ｎ ２×１０18 ６９．５ｎｍ ＡｌＡｓ ｎ ２×１０18 ８３ｎｍ （、は１８回繰り返し） ｎ型クラッド層３：Ａｌ0.25Ｇａ0.75Ａｓ ｎ １×１０17 ２６３ｎｍ 活性層： Ａｌ0.25Ｇａ0.75Ａｓ アンドープ １４ｎｍ Ｉｎ0.2 Ｇａ0.8 Ａｓ アンドープ １０ｎｍ Ａｌ0.25Ｇａ0.75Ａｓ アンドープ ３ｎｍ （〜は３回繰り返し） ｐ型クラッド層５：Ａｌ0.25Ｇａ0.75Ａｓ ｐ ５×１０16 ５４４ｎｍ ｐ型多層反射膜： ＡｌＡｓ ｐ ３×１０18 ８３ｎｍ ＧａＡｓ ｐ ３×１０18 ６９．５ｎｍ ＡｌＡｓ ｐ ３×１０18 ８３ｎｍ （、は１５回繰り返し） キャップ層： ＧａＡｓ ｐ １×１０19 １００ｎｍThe surface emitting laser comprises a buffer layer (not shown), an n-type multilayer reflection film 2, and an n-type multilayer reflection film 2 on the n-type GaAs substrate 1 in this order.
n-type Al 0.25 Ga 0.75 As clad layer 3, In 0.2 Ga
The 0.8 As active layer 4, the p-type Al 0.25 Ga 0.75 As clad layer 5, the p-type multilayer reflective film 6, and the cap layer (not shown) are formed in this order using a wafer. The concrete data of the epitaxial growth layer are as follows. n-type GaAs substrate 1: n 2 × 10 18 buffer layer: GaAs n 2 × 10 18 400 nm n-type multilayer reflective film: AlAs n 2 × 10 18 83 nm GaAs n 2 × 10 18 69.5 nm AlAs n 2 × 10 18 83 nm (, Is repeated 18 times) n-type cladding layer 3: Al 0.25 Ga 0.75 As n 1 × 10 17 263 nm Active layer: Al 0.25 Ga 0.75 As undoped 14 nm In 0.2 Ga 0.8 As undoped 10 nm Al 0.25 Ga 0.75 As undoped 3 nm (~ Is repeated 3 times) p-type cladding layer 5: Al 0.25 Ga 0.75 As p 5 × 10 16 544 nm p-type multilayer reflective film: AlAs p 3 × 10 18 83 nm GaAs p 3 × 10 18 69.5 nm AlAs p 3 × 10 18 83 nm (repeated 15 times) Cap layer: GaAs p 1 × 10 19 100 nm
【００１２】このウェハのｐ型多層反射膜を８μｍ□に
エッチングし、複数の面発光レーザ素子１０を有する面
発光レーザ基板２０を作製する。また、レーザ素子１０
を覆うようにｐ側電極７を形成し、それをマスクにＩｎ
0.2 Ｇａ0.8 Ａｓ活性層４の深さに達するようにプロト
ンを注入して素子分離用の高抵抗領域８を形成する。さ
らに、ウェハの一部をエッチング除去して、ｎ型多層反
射膜２に到達するトレンチを形成し、その底部にｎ型電
極９を形成する。最後にｐ型電極７とｎ型電極９の上部
に厚さ１０μｍ、サイズ４０μｍ□の大きさの金バンプ
１１を形成する。The p-type multilayer reflective film of this wafer is etched to 8 μm □ to produce a surface emitting laser substrate 20 having a plurality of surface emitting laser elements 10. In addition, the laser device 10
A p-side electrode 7 is formed so as to cover the
Protons are injected to reach the depth of the 0.2 Ga 0.8 As active layer 4 to form a high resistance region 8 for element isolation. Further, a part of the wafer is removed by etching to form a trench reaching the n-type multilayer reflective film 2, and an n-type electrode 9 is formed on the bottom of the trench. Finally, a gold bump 11 having a thickness of 10 μm and a size of 40 μm □ is formed on the p-type electrode 7 and the n-type electrode 9.
【００１３】次に、図２を参照して、このようにして形
成された面発光レーザ基板２０のサブキャリア１２への
搭載方法について説明する。図２（ａ）に示すように、
凸部１２ａを有し、キャリア電極１３と半田バンプ１４
ａが形成されたサブキャリア１２上に、金バンプ１１を
有する面発光レーザ基板２０を搭載し、半田バンプ１４
ａ上に金バンプ１１が重なるように位置合わせする。Next, a method of mounting the surface emitting laser substrate 20 thus formed on the subcarrier 12 will be described with reference to FIG. As shown in FIG.
The carrier electrode 13 and the solder bump 14 have the convex portion 12a.
The surface emitting laser substrate 20 having the gold bumps 11 is mounted on the sub-carrier 12 on which a is formed, and the solder bumps 14 are formed.
The gold bumps 11 are aligned so that they overlap with a.
【００１４】続いて、半田バンプ１４ａが溶融するまで
昇温すると、図２（ｂ）に示すように、半田の表面張力
によりレーザ基板の位置が自動修正されるとともにレー
ザ基板２０は降下して凸部１２ａに当接する。これによ
り基板に歪みが導入される。その後、降温すると、図２
（ｃ）に示されるように、ボンディングが完了する。こ
のとき、熱膨張係数の大きい半田が収縮してレーザ基板
２０に、図１に示されるように、大きな歪みが導入され
る。これにより面発光レーザ素子１０より、偏光比がほ
ぼ１００％の紙面に垂直方向を振動面とする偏光を得る
ことができた。Then, when the temperature of the solder bump 14a is raised until it melts, the position of the laser substrate is automatically corrected by the surface tension of the solder and the laser substrate 20 descends and rises, as shown in FIG. 2 (b). It contacts the portion 12a. This introduces strain into the substrate. After that, when the temperature is lowered,
Bonding is completed as shown in FIG. At this time, the solder having a large thermal expansion coefficient contracts, and a large strain is introduced into the laser substrate 20, as shown in FIG. As a result, it was possible to obtain polarized light having a polarization ratio of almost 100% and having a vibrating surface in a direction perpendicular to the paper surface from the surface emitting laser element 10.
【００１５】以上好ましい実施形態について説明した
が、本発明はこの実施形態に限定されるものではなく、
特許請求の範囲に記載された範囲内において各種の変更
が可能なものである。例えば、上記実施形態においてサ
ブキャリヤは窒化シリコン製としたが、他のセラミック
材料や絶縁被覆の金属基板等を用いることもでき、特に
材料は問わない。また、半田バンプ、金属バンプ、サブ
キャリヤの凸部の高さやサイズは上記の値に限定され
ず、必要とされる歪みの程度に応じて変更することがで
きるものである。さらに、メサは必ずしも形成する必要
はなくまた形成する場合にも高さやサイズは適宜の値に
選択することができる。また、サブキャリア上に形成さ
れる凸部は、エリアごとに異なる方向に向いたものとす
ることができる。このようにすれば、同一ペレットより
異なる偏光面をもつ偏光を得ることができる。Although the preferred embodiment has been described above, the present invention is not limited to this embodiment.
Various modifications can be made within the scope described in the claims. For example, although the sub-carrier is made of silicon nitride in the above-mentioned embodiment, other ceramic materials, a metal substrate having an insulating coating, or the like can be used, and the material is not particularly limited. The heights and sizes of the solder bumps, the metal bumps, and the convex portions of the sub-carrier are not limited to the above values, and can be changed according to the degree of distortion required. Furthermore, the mesa does not necessarily have to be formed, and the height and size can be selected to appropriate values even when formed. Further, the convex portions formed on the subcarriers can be oriented in different directions for each area. By doing so, polarized light having different polarization planes can be obtained from the same pellet.
【００１６】[0016]
【発明の効果】以上説明したように、本発明によれば、
サブキャリヤの凸部の高さ、半田の量と材質を変えるこ
とにより任意の大きさの歪みを面発光レーザの活性層部
分に与えることができる。したがって、本発明によれ
ば、高い偏光比のレーザビームを得ることができる。ま
た、メサを形成する必要がなく、形成する場合であって
も微細な形状に形成する必要がないので、効率の低下を
抑制できるとともに製作も容易になる。また、本発明の
方法は、面発光レーザ自体の設計には関わらないので、
面発光レーザは発光効率など、独立にその特性改善を行
うことができる。As described above, according to the present invention,
By changing the height of the convex portion of the subcarrier, the amount of solder, and the material, it is possible to give an arbitrary amount of strain to the active layer portion of the surface emitting laser. Therefore, according to the present invention, a laser beam having a high polarization ratio can be obtained. Further, since it is not necessary to form a mesa, and even if it is formed, it is not necessary to form a fine shape, it is possible to suppress a decrease in efficiency and facilitate manufacturing. Further, since the method of the present invention does not relate to the design of the surface emitting laser itself,
The surface emitting laser can independently improve its characteristics such as luminous efficiency.
【図１】本発明の一実施形態の面発光レーザ装置を示す
断面図。FIG. 1 is a sectional view showing a surface emitting laser device according to an embodiment of the present invention.
【図２】本発明の一実施形態の面発光レーザ装置の製造
方法を説明するための断面図。FIG. 2 is a sectional view for explaining the method for manufacturing the surface emitting laser device according to the embodiment of the present invention.
【図３】従来例の、一部断面を示す斜視図。FIG. 3 is a perspective view showing a partial cross section of a conventional example.
１ ｎ型ＧａＡｓ基板 ２ ｎ型多層反射膜 ３ ｎ型Ａｌ0.25Ｇａ0.75Ａｓクラッド層 ３ａ ｎ型Ａｌ0.3 Ｇａ0.7 Ａｓクラッド層 ４ Ｉｎ0.2 Ｇａ0.8 Ａｓ活性層 ５ ｐ型Ａｌ0.25Ｇａ0.75Ａｓクラッド層 ５ａ ｐ型Ａｌ0.3 Ｇａ0.7 Ａｓクラッド層 ６ ｐ型多層反射膜 ７ ｐ側電極 ８ 高抵抗領域 ９ ｎ側電極 １０ 面発光レーザ素子 １１ 金バンプ １２ サブキャリア １２ａ 凸部 １３ キャリア電極 １４ 半田 １４ａ 半田バンプ １５ 長方形メサ ２０ 面発光レーザ基板1 n-type GaAs substrate 2 n-type multilayer reflective film 3 n-type Al 0.25 Ga 0.75 As clad layer 3 a n-type Al 0.3 Ga 0.7 As clad layer 4 In 0.2 Ga 0.8 As active layer 5 p-type Al 0.25 Ga 0.75 As clad layer 5a p-type Al 0.3 Ga 0.7 As clad layer 6 p-type multilayer reflective film 7 p-side electrode 8 high resistance region 9 n-side electrode 10 surface emitting laser element 11 gold bump 12 subcarrier 12a convex portion 13 carrier electrode 14 solder 14a solder bump 15 Rectangular mesa 20 surface emitting laser substrate
Claims (6)
された第１導電型クラッド層、活性層および第２導電型
クラッド層とを有し、前記第１導電型半導体基板側から
光を放出する面発光レーザ素子が少なくとも１個形成さ
れている面発光レーザ基板が、前記第１導電型半導体基
板側を上にして支持基板上に搭載されている面発光レー
ザ装置において、前記面発光レーザ基板上に形成された
第２導電型側の電極が支持基板上に形成された基板電極
に半田を介して接続されており、前記支持基板上に形成
された複数の凸部が前記面発光レーザ基板に当接してい
ることを特徴とする面発光レーザ装置。1. A first-conductivity-type semiconductor substrate, and a first-conductivity-type clad layer, an active layer, and a second-conductivity-type clad layer formed on the first-conductivity-type semiconductor substrate. In a surface emitting laser device in which a surface emitting laser substrate having at least one surface emitting laser element for emitting light is mounted on a supporting substrate with the first conductivity type semiconductor substrate side facing upward, An electrode of the second conductivity type formed on the laser substrate is connected to a substrate electrode formed on a supporting substrate via solder, and a plurality of convex portions formed on the supporting substrate have the surface emitting light. A surface emitting laser device, which is in contact with a laser substrate.
ッド層との間に第１導電型多層反射膜が形成され、第２
導電型クラッド層と第２導電型側電極との間に第２導電
型多層反射膜が形成されていることを特徴とする請求項
１記載の面発光レーザ装置。2. A first-conductivity-type multilayer reflective film is formed between a first-conductivity-type semiconductor substrate and a first-conductivity-type clad layer,
2. The surface emitting laser device according to claim 1, wherein a second conductive type multilayer reflective film is formed between the conductive type clad layer and the second conductive type side electrode.
工されており、そのメサ部の周囲の前記活性層を含む半
導体層には素子分離領域が形成されていることを特徴と
する請求項２記載の面発光レーザ装置。3. The second conductive type multilayer reflective film is processed into a mesa shape, and an element isolation region is formed in a semiconductor layer including the active layer around the mesa portion. The surface emitting laser device according to claim 2.
クラッド層および前記活性層を貫通する開口内に形成さ
れており、該電極が前記支持基板上に形成された基板電
極と半田を介して接続されていることを特徴とする請求
項１記載の面発光レーザ装置。4. An electrode on the first conductivity type side is formed in an opening penetrating the second conductivity type clad layer and the active layer, and the electrode is a substrate electrode formed on the supporting substrate. The surface emitting laser device according to claim 1, wherein the surface emitting laser device is connected via solder.
部が、同一の群内では平行にかつ異なる群間では異なる
方向を向くように形成されており、それぞれの凸部が前
記面発光レーザ基板に当接していることを特徴とする請
求項１記載の面発光レーザ装置。5. The convex portions of one or a plurality of groups are formed on the supporting substrate so as to be parallel to each other in the same group and to face different directions between different groups, and each convex portion is the surface. The surface emitting laser device according to claim 1, wherein the surface emitting laser device is in contact with the light emitting laser substrate.
持基板上に、 第１導電型半導体基板上に第１導電型クラッド層、活性
層および第２導電型クラッド層が形成され、該第２導電
型クラッド層上に第２導電型側電極が形成され、前記第
１導電型半導体基板側から光を放出する面発光レーザ素
子を少なくとも１個備える面発光レーザ基板を、 前記基板電極上に何れかの電極上に形成された半田バン
プを介して前記第２導電型側電極が重なる態様にて、搭
載し、 半田リフローにより、両電極間を接続するとともに前記
支持基板上の凸部を前記面発光レーザ基板に当接させる
ことを特徴とする面発光レーザ装置の製造方法。6. A first-conductivity-type clad layer, an active layer, and a second-conductivity-type clad layer are formed on a first-conductivity-type semiconductor substrate on a support substrate on which the protrusions and the substrate electrodes are formed. A surface-emission laser substrate having a second-conductivity-type-side electrode formed on a second-conductivity-type clad layer and including at least one surface-emission laser device that emits light from the first-conductivity-type semiconductor substrate is provided on the substrate electrode. The electrodes of the second conductivity type are mounted so as to overlap each other via the solder bumps formed on any of the electrodes, and the two electrodes are connected by solder reflow, and the convex portions on the support substrate are connected to each other. A method for manufacturing a surface emitting laser device, which comprises contacting the surface emitting laser substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7237833A JPH0964462A (en) | 1995-08-24 | 1995-08-24 | Surface emitting laser device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7237833A JPH0964462A (en) | 1995-08-24 | 1995-08-24 | Surface emitting laser device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0964462A true JPH0964462A (en) | 1997-03-07 |
Family
ID=17021090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7237833A Pending JPH0964462A (en) | 1995-08-24 | 1995-08-24 | Surface emitting laser device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0964462A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999007043A1 (en) * | 1997-07-29 | 1999-02-11 | Seiko Epson Corporation | Surface emission semiconductor laser |
| EP0924820A3 (en) * | 1997-12-18 | 1999-07-14 | Hewlett-Packard Company | Polarisation-controlled VCSELS using externally applied unitaxial stress |
| JP2001156394A (en) * | 1999-11-30 | 2001-06-08 | Seiko Epson Corp | Surface emitting semiconductor laser and method of manufacturing surface emitting semiconductor laser |
| JP2003332685A (en) * | 2003-05-30 | 2003-11-21 | Seiko Epson Corp | Surface emitting semiconductor laser and surface emitting semiconductor laser array |
| JP2006060239A (en) * | 2004-08-23 | 2006-03-02 | Osram Opto Semiconductors Gmbh | Semiconductor component and manufacturing method thereof |
| US20220344909A1 (en) * | 2021-04-26 | 2022-10-27 | Lumentum Operations Llc | Matrix addressable vertical cavity surface emitting laser array |
-
1995
- 1995-08-24 JP JP7237833A patent/JPH0964462A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999007043A1 (en) * | 1997-07-29 | 1999-02-11 | Seiko Epson Corporation | Surface emission semiconductor laser |
| US6134251A (en) * | 1997-07-29 | 2000-10-17 | Seiko Epson Corporation | Surface emission semiconductor laser |
| US6603783B1 (en) | 1997-07-29 | 2003-08-05 | Seiko Epson Corporation | Surface emitting type semiconductor laser |
| EP0924820A3 (en) * | 1997-12-18 | 1999-07-14 | Hewlett-Packard Company | Polarisation-controlled VCSELS using externally applied unitaxial stress |
| US6188711B1 (en) | 1997-12-18 | 2001-02-13 | Agilent Technologies, Inc. | Polarization-controlled VCSELs using externally applied uniaxial stress |
| JP2001156394A (en) * | 1999-11-30 | 2001-06-08 | Seiko Epson Corp | Surface emitting semiconductor laser and method of manufacturing surface emitting semiconductor laser |
| JP2003332685A (en) * | 2003-05-30 | 2003-11-21 | Seiko Epson Corp | Surface emitting semiconductor laser and surface emitting semiconductor laser array |
| JP2006060239A (en) * | 2004-08-23 | 2006-03-02 | Osram Opto Semiconductors Gmbh | Semiconductor component and manufacturing method thereof |
| US20220344909A1 (en) * | 2021-04-26 | 2022-10-27 | Lumentum Operations Llc | Matrix addressable vertical cavity surface emitting laser array |
| US12308618B2 (en) * | 2021-04-26 | 2025-05-20 | Lumentum Operations Llc | Matrix addressable vertical cavity surface emitting laser array |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100255689B1 (en) | Semiconductor laser device and its manufacturing method | |
| US4870652A (en) | Monolithic high density arrays of independently addressable semiconductor laser sources | |
| US5068869A (en) | Surface-emitting laser diode | |
| US5701321A (en) | Semiconductor laser producing short wavelength light | |
| CA1152623A (en) | Semiconductor laser device | |
| US4980893A (en) | Monolithic high density arrays of independently addressable offset semiconductor laser sources | |
| US7885303B2 (en) | Nitride semiconductor laser device and method of manufacturing the same | |
| JPH0278280A (en) | Semiconductor light emitting device | |
| GB2145281A (en) | Surface emitting semiconductor laser | |
| US4856015A (en) | Semiconductor laser array device | |
| JP4359354B2 (en) | VCSEL assembly and manufacturing method thereof | |
| JPH0719934B2 (en) | Laser diode array and manufacturing method thereof | |
| JPH0332080A (en) | Semiconductor light emitting element and manufacture thereof | |
| US7653110B2 (en) | Semiconductor laser apparatus and method for mounting semiconductor laser apparatus | |
| JPH0964462A (en) | Surface emitting laser device and its manufacture | |
| JPH05218586A (en) | Semiconductor laser device and manufacture of the same | |
| US7894499B2 (en) | Semiconductor laser device with a rounded base mesa structure | |
| Iga et al. | Surface emitting semiconductor laser array: Its advantage and future | |
| CN114830466A (en) | Light emitting device and method of manufacturing light emitting device | |
| JP2800746B2 (en) | Surface emitting device and method of manufacturing the same | |
| JPH0722699A (en) | Solid resonator type surface emitting laser | |
| KR100255695B1 (en) | Semiconductor laser device and its manufacturing method | |
| JP5122708B2 (en) | Multi-beam semiconductor laser device | |
| KR960014733B1 (en) | Method for manufacturing surface-emitting semiconductor laser diode device using mesa patterned substrate | |
| JP3355016B2 (en) | Semiconductor light emitting device and method of manufacturing the same |