JPH097171A - Curved body memory and method of manufacturing the same - Google Patents

Abstract

(57) [Abstract] [Purpose] A thin film magnetic recording medium capable of high density recording of ^{2 to} 32 Gb / in ² and 32 Gb / in ² or more, that is, Sphe
re-Spin Memory (SSM) and SSM device and SS
M system Further film formation, manufacturing, processing and equipment of new memory semiconductor, IC, LSI, etc. In particular, it provides a curved surface memory. [Structure] Film formation for obtaining high density and high reliability memory,
In the manufacturing equipment, it is desirable to have a three-dimensional curved surface,
Obtain Sphere-Spin Memory (SSM) on the sphere. A system that enables the obtained product as an SSM device and an SSM system for a computer. Also other diversion memory and processing.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an information storage device and a manufacturing method and manufacturing device thereof.

[0002]

2. Description of the Related Art Magnetic recording media currently commercialized are mainly coating types using an organic binder, that is, those having a discontinuous medium. An oxide is used as the magnetic powder used in this discontinuous medium, and the magnetic particles are filled with an organic binder, so that the discontinuous medium is formed.
Naturally, the value of magnetization becomes small, and the film thickness becomes thicker when trying to obtain an output, which is not suitable for high density.

In recent years, the density of magnetic recording media has been remarkably improved, and a medium having a large coercive force, which is a continuous thin film medium, has been required. This continuous thin-film medium capable of high-density magnetic recording is formed by a chemical method (CVD: Chemical Vapor Depositi).
on), plasma polymerization, physical method (PVD: Phsical Va
The current situation is that pour deposition) is performed.
That is, a metallic thin film, or an oxide or nitride magnetic thin film is formed by a method such as vacuum deposition, sputtering, ion plating, ion beam deposition, or ion assisted deposition. In particular, when the magnetic layer is made of a magnetic alloy, it has excellent characteristics, and a high frequency sputtering method, RF, DC magnetron sputtering method, bias sputtering method, RF sputtering method or the like is used as the film forming apparatus.
The high-density magnetic disk obtained by such a method is a head suspension device with a simple structure that can be used for a high-density recording disk file (Japanese Patent Publication No. 6-9086).
No. 0) is used in a magnetic disk storage device.

As a magnetic layer of such a high density magnetic disk, for example, CoPtCr (C
r; 1 to 17%) also has a single layer film, and also US Pat. No. 4,789,598.
In Japanese Patent Laid-Open No. 2-281414, CoPtCr (Cr; 17%) and Cr are used as a single layer film of CoPtCr (Cr; 13-20%).
Is described.

[0005]

In the prior art, the characteristics of the magnetic recording medium suitable for high linear recording density and high track density have not been sufficiently taken into consideration. That is, in the prior art, IEEE Transactions On, Magnetics M
AG-22, 579-518 (1986) (IEE
As described in E.Trans.on Magn.MAG-22,579-581 (1986)) and US Pat. No. 4,735,840, the magnetic characteristics in the circumferential direction and the recording / reproducing characteristics become non-uniform depending on the film forming conditions. was there.

In order to reduce this non-uniformity, conventionally, the center line average surface roughness is 5 nm along the circumferential direction of the disk substrate.
It had unevenness (texture). But 11
To record / reproduce at a high linear recording density of 0 KBPI or more,
It is necessary to keep the distance (spacing) from the head medium to about 0.1 μm or less. For this purpose, it is necessary to make the substrate as smooth as possible. However, if the texture process is performed, the plane of the substrate becomes rough, so that the spacing between the head media cannot be stably narrowed down to about 0.1 μm or less.

That is, on a textured substrate, the quality of the servo signal is poor and accurate positioning cannot be achieved, making it difficult to achieve a high track density of 5 KTPI or more. Therefore, if you reduce the texture or eliminate the texture, you can avoid these problems, but as mentioned above, the non-uniformity in the circumferential direction is generally extremely large.
There is a problem that it is difficult to stably supply a magnetic disk having a high orientation in the circumferential direction and S / N and suitable for high density.

This is because it is difficult to provide anisotropy in the circumferential direction of the magnetic disk on a smooth substrate which is not textured by the conventional thin film medium manufacturing method. The current densification technology is Nikkei Electronics 1991, 9, 30 (No. 537), The Japan Society for Applied Magnetics, V
ol. 17, No. 5, 1993, "High Density in In-Plane Thin-Film Magnetic Disk" and Micro Optical Research Group (Development and Future of Hard Magnetic Disk), 52nd, 1994, 7 .

Therefore, as another technique for increasing the density, Japanese Patent Publication No.
-61685 describes a method of controlling surface roughness without using texture. This method temporarily deposits an underlayer of a liquid metal film on a substrate.
That is, a temporary spherical nucleus (macroscopic) of liquid metal is formed, and a magnetic layer is formed thereon.

Further, a medium having a unique texture and having solid lubricating barium ferrite (BaM), which has excellent corrosion resistance and abrasion resistance, does not require surface lubrication of the head and the medium and a protective film, etc. JP-A-7-44853) has also appeared.

An object of the present invention is to provide a film forming method and apparatus capable of stably obtaining a thin film in which the constituent fine particles are uniform and the orientation of the constituent fine particles is stable, and further, the magnetic property in nanometer (nm) technology. A recording medium manufacturing technology effective for driving the head and the magnetic memory, such as prevention of adsorption between the head and the magnetic memory, and particularly a spherical memory and a sphere-spin memory (hereinafter abbreviated as SSM).
Another object of the present invention is to provide an SSM device having a head and a more effective double-duplex SSM device and storage system.

Another object of the present invention is 200 KBPI, 10 KTPI to 800 KBPI, 40 KTPI, that is, 2 Gb / in ² to 32 Gb.
A magnetic thin film with uniform magnetic anisotropy and low noise is stable on a substrate with an extremely smooth surface (center line average surface roughness of 2 nm or less) suitable for high density recording of / in ² or more. It is an object of the present invention to provide a method and an apparatus for manufacturing a thin film magnetic recording medium obtained as described above, and a new memory device that can use the system for other purposes. That is, it can be diverted from a flat plate memory (πr ² memory) such as a magnetic memory, an optical pattern memory, or a semiconductor memory to a spherical memory (4πr ² memory), that is, from πr ² to 4πr ² , and has a storage capacity four times that of the conventional one. . Especially, high density and small size, that is, 1
Since the spherical memory has a surface area four times as large as the inch or less, it is effective as a memory and high reliability.

Further, a magnetoresistive conversion type utilizing a high coercive force magnetic material for generating a bias magnetic field for obtaining a high output signal driven by a low current so as to adapt to a narrow track width for higher density. An MR head (Japanese Patent Laid-Open No. 7-44827) has also appeared.

Another object of the present invention is 2 Gb to 32 Gb.
A solid curved surface capable of contacting a thin film magnetic recording medium with a head capable of high-density recording of 1 / in ² or more, preferably a sphere-spin memory and a magnetic storage device using the same. To provide.

Another object of the present invention is to use a medium and a medium having a low medium noise, a high peak jitter, a high signal-to-noise ratio (SNR) of the medium and a small bit error rate during high density magnetic recording. It is to provide a magnetic recording device, a semiconductor film formation and memory, a memory by manufacturing and processing, and more effective energy injection, and a spherical / spherical memory, that is, a solid curved surface memory.

It is also one of the important objects of the present invention to divert the film forming system of the present invention to various other purposes, for example, semiconductor devices and their manufacturing techniques, automobile parts and the like and their manufacturing techniques.

[0017]

The structure of the present invention is shown in FIGS. 1, 2, 5, 5, 7, 9, 10, 11, 12, and 1.
3, as shown in FIGS. 14, 15, and 16, in particular, a sphere-spin memory having a three-dimensional curved surface.
) System and film forming apparatus system, in particular, wave film forming apparatus, and further wave CVD film forming apparatus system, by applying energy by superposition of sound waves, preferably superposition of sound waves and electromagnetic waves, that is, wave energy control. It is characterized by obtaining a three-dimensional curved surface memory having the outer shape of.

A more desirable method is the present invention (system).
That is, the wave energy and wave CVD energy are applied to the surface to form micronuclei (energy), and then the film is formed.

In order to achieve the above object, the present invention uses a smooth non-magnetic substrate having a surface centerline average surface roughness of 2 nm or less, which enables stable and low flying of a magnetic head, and forms a thin film on the substrate. Plasma-like or vapor-like particles, that is, acoustic waves capable of giving effective energy from the outside to the particles produced by the sputter evaporation method, vapor deposition method, or ion beam sputtering method, compression waves of ultrasonic waves, and are preferably controlled. Using a thin film forming device with equipment for generating longitudinal and transverse waves, energy controlled acoustic waves, ultrasonic modes, superposition modes of acoustic waves and ultrasonic waves, particles evaporated, sputtered, and converted into plasma using interference waves, Ion-acoustic method (see; fusion research,
Vol. 67, No. 6, June 1992, P530-), which is achieved by forming a thin film by effectively controlling and exciting and increasing the energy.

Therefore, effective means at the surface and interface handling film formation on a three-dimensional curved surface are used in the wave system of the present invention. In particular, wave CVD, wave PVD, wave plasma and polymerization, ie, wave energy are superimposed and applied to electromagnetic waves. And engineering use. In other words, it is a convenient means for obtaining a new memory by forming a nucleus on the surface and forming a film.

Here, in order to make more effective the plasma state, that is, the quantum fluctuations of photons (photons) and sound quanta (phonons) that occur during discharge, as well as electrons, atoms, molecules, and ions. New phenomenon, wave CVD, wave P
Various effective film formation, memory and processing can be obtained by giving wave energy to VD and wave plasma, particularly by a spherical wave (shape effect of the sound wave element).

That is, the formation of nuclei that stochastically determines various film-forming conditions by the electromagnetic interaction applying the wave energy of the present invention, preferably the wave CVD energy, the wave PVD energy, and the wave plasma energy. It is possible to obtain a film formation and a new memory in which the growth and the energy level can be controlled, and the specific energy of particles is made effective.

[0023]

In the present invention, plasma-like particles such as sputter-evaporated particles are directly converted into various waves, variable sound waves, ultrasonic waves such as compression and compression waves, and preferably longitudinal waves in a vacuum container (tank). The thin film information recording medium having desired characteristics is formed by applying energy such as an interference wave with a transverse wave and a spherical wave due to a shape effect to excite the wave. Particularly excellent characteristics can be obtained by controlling the wave mode of the sound wave, the electromagnetic wave, and the CVD gas. This is because the energy state and behavior of particles play an extremely important role in thin film growth on the surface of a curved body such as a sphere.

That is, by superimposing a sound wave having a wave mode of a sound wave or an electromagnetic wave of a wave of an ultrasonic wave, particles are excited and interaction is strengthened, so that atoms and ions which are metastable and hardly exist in a usual manufacturing method. Realize the combined state,
It controls the dispersibility and composition segregation as well as the orientation of the underlayer or magnetic layer, the segregation state is controlled, the size of the magnetic particles is made uniform, high output and low noise, and fluctuations in the magnetic properties in the circumferential direction. It is possible to provide a medium having a solid curved surface of 5% or less and suitable for high-density recording.

In particular, by applying the present invention to a substrate whose center line average surface roughness Ra of the medium surface is 2.5 nm or less, the running direction of the head (in the case of a sphere, the circumferential direction of the curved surface).
It is particularly preferable because the fluctuation of the magnetic properties of can be made uniform at 5%. By using the recording medium obtained by implementing the present invention, the flying height of the magnetic head can be reduced to 0.05 μm or less.
High density devices from Gb to 32 Gb / in ² or higher can be provided.

This effect is remarkable when the surface roughness of the substrate is 0.1 nm or more and 2 nm or less. Further, by further energy-treating the protective layer on the magnetic layer so that its center line average surface roughness becomes larger than that of the substrate, adhesion at contact start and stop (CSS), increase in tangential force, etc. Is more preferable because it can be effectively prevented.

Further, a bias of about -400 V is applied at the time of film formation, and a high orientation process for forming a film at 10 W / cm ² or more and a wave energy for superimposing (an electromagnetic wave of 2 to 7 W) on a sound wave are simultaneously performed. Electromagnetic characteristics such as coercive force and squareness ratio of the magnetic film formed on the SSM and uniformity can be further improved.

Further, in the present invention, various magnetic anisotropies can be obtained by further applying a magnetic field when applying the wave energy to the sound waves or ultrasonic waves to the plasma-like particles, that is, sputter-evaporated particles. The non-magnetic substrate is NiP
Al alloy substrate, Ti substrate, glass, silicon, SiC, C crystallized glass or ceramic substrate plated with, for example, Si ₃ N ₄ , and at least the surface has high strength, high capturing property for flying particles, and orientation. It is preferable to use a material that effectively absorbs the wave energy for controlling segregation.

Since the orientation, anisotropy, and texture can be controlled by this method, the method can be applied to magnetic head materials such as permalloy thin films for MR reproducing elements and amorphous magnetic materials for recording. This equipment is a semiconductor manufacturing equipment,
It can be used as a device for manufacturing various parts such as automobiles.

Ceramics, Si ₃ N ₄ , crystallized glass, tempered glass, carbon, Si, jade, SiO ₂ , sapphire, SiC, Ti, tungsten, tungsten molybdenum, diamond, etc., all of which have a solid curved surface, and aluminum. A base material obtained by plating an alloy with NiP has at least one underlayer of Nb, Cr, Mo, W (anisotropic), CrTi or the like, or directly, or CoCrPt, CoCrT
When at least one magnetic layer of a, CoNiCr, CoNiPt, etc. is formed, various physically evaporated particles are subjected to sound waves and ultrasonic waves,
Furthermore, by applying wave energy superposed with electromagnetic waves from the space, the crystal grains become finer and the dispersibility increases, and the grain size segregation state becomes more uniform, resulting in a film structure suitable for noise reduction. .

The magnetic layer is made of Cr, Mo, W, CrTi, CrSi, Nb, C, B, T having a thickness of 0.5 or more and 10 nm or less.
Separation into at least two layers with a non-magnetic layer such as a and V is particularly preferable because noise can be significantly reduced. Furthermore, when a thin film is formed by a normal vapor deposition method or a sputtering method, the center line average surface roughness of the substrate is particularly affected by the distribution of the surface roughness of the substrate, the distribution of the substrate temperature, and the growth of particles of the oblique incident component. If Ra is as small as 2 nm or less, the magnetic characteristics of the spherical body in the circumferential direction of the curved surface will fluctuate significantly, but this method should also enable the superposition of wave energy of sound waves and ultrasonic waves and applied wave energy of electromagnetic waves. It is possible to suppress the disturbance of the distribution due to disturbance, and the physical vaporization particle group that does not exist in the energy state by the ordinary film forming method, the bonded state of the wave plasma polymerization method, etc. will also exist, and the orientation can be easily controlled, It is possible to make the characteristics uniform.

When Ra is smaller than 0.1 nm, it is more important to set and process the conditions. The wave state can be broadly divided into three modes: longitudinal wave, transverse wave, and interference wave mode. Since these modes are well known, a detailed description is omitted (see: Ultrasound Spectroscopy, edited by Wada and Ikushima). The interference wave mode particularly effective for the present invention is obtained from interference of different waves such as sound waves, longitudinal waves of ultrasonic waves, and transverse waves.

Further, sound waves and ultrasonic waves may be waved in any mode, and electromagnetic waves may be superposed on the wave CVD, wave PVD and wave plasma. Also, the superposition effect during thin film formation is that the frequency, phase and amplitude of electromagnetic waves and applied sound waves and ultrasonic waves are equal during physical vaporization, and the frequency is an integer of the vibration of the substrate (strictly including the magnetic film). It is remarkable when they match twice, but may be different. For example, a 1.0 inch diameter Si ₃ N ₄ substrate (sphere)
In this case, the wave may be waved in space at a frequency of about 38 kHz or an integral multiple thereof. Similarly, for example, 1/3 inch, and in the case of a sphere, about 76 kHz is desirable. Also,
It is more effective to rotate the sphere during film formation.

[0034]

FIG. 1 is a sectional view of an SSM apparatus having a three-dimensional curved surface according to the present invention, which is equipped with a head 200.
In addition, the SSM system 1500 is characterized by being controlled and driven 420.

The preformat area and the data recording area for address information, tracking signals, and the like for indicating the position on the sphere are obtained by transforming a well-known format onto the sphere.

FIG. 2 is a schematic sectional view of the SSM device shown in FIG. 1 which is an SSM device which is vertically driven with more stability and higher reliability. At the same time, the configuration of the head is paired, and the head is more suitable for high density and high reliability in which the contact between the head and the memory body operates more stably.

In this SSM system, the heads in the memory body can be floated in single, plural and pairs, and can be contact-driven. Furthermore, sphere 300 and induction rotation drive
600 are fixed together by the connecting shaft 700, and the bearing 8
Rotate through 00. Further, this rotational drive is driven by the control circuit section 400 of the electromagnetic conductor 600 '. Similarly, the controls 420 and 421 of the head unit are adjusted while synchronizing from the control circuit units 400 and 401.

Further, as shown in comparative examples of the spherical memory FIGS. 1 and 2 of the present invention and the conventional disk memory FIGS. 3 and 4, respectively, the floating head 200 is conventionally mounted on the disk 3. Has been saved. Here, it is well known that the same can be said for the plurality of discs 3 shown in FIG. In other words, both are technical factors that are difficult to achieve high density (ie surface area πr ² ,
Floating and contacting for densification).

Specific examples thereof are shown in the present invention of FIGS. 5 (a) and 5 (b) and the conventional method of FIG. That is, the sphere 30 of the present invention
0 is highly reliable due to the high density (4πr ² ) and the characteristics of the sphere and is promising as a small memory. In particular, the contact operation has an advantage. In FIG. 5A, the head 200 operating on the sphere memory 333 has a flat surface, preferably a curved surface, and more desirable one is a multi-row structure shown in FIG. 5B. It operates with a crescent-shaped curved head equipped with an MR head.

That is, it has a characteristic not found in the conventional floating type shown in FIG. That is, in the SSM system of the present invention, the space h between the head and the medium surface in the conventional example shown in FIG. 6 can be made as close as possible to zero (0), and the operation can be performed up to contact driving.

Therefore, the spherical spin memory (SS
M) and the conventional disk-type rotating memory, in particular, the surface area becomes an important factor as the memory becomes smaller as the size becomes smaller, and the spherical memory of the present invention is advantageous for miniaturization, and is a memory having a more effective spherical surface. I will provide a.

Therefore, FIG. 7 shows a partial cross-sectional view of a film forming structure by a general vapor deposition method or a plasma method for obtaining the SSM of the present invention. That is, the sphere (Si ₃ N ₄ ) 30
After the plasma treatment 301 on the 0 surface, a Cr alloy film 51 and a Co alloy film 52 were applied, and a NiF53 film was formed by a special plasma treatment method 302. The NiF film 53 provided a spherical memory 333 that was excellent in durability and could withstand contact as a lubricating film.

Further, a head-memory contact drive type which withstands more contact by sputtering an effective BaM55 which also serves as a magnetic memory 333 and solid lubrication directly on a spherical ceramic excellent in durability is also available. It is possible. Further, processing 303 is performed as necessary.

The BaM memory 333 has durability,
It is well known that the solid lubricity is also excellent, as shown in JP-A-7-44853.

FIG. 8 is a partial cross-sectional view of a film structure of a conventional disk type memory, which is for comparison with the film structure of a spherical memory having a three-dimensional curved surface according to the present invention. .

That is, as a general film forming method, a Cr alloy 51 is first sputtered on the substrate (flat plate) 3 from the relation of the lattice constant, and further a Co alloy film 52 is grown, on which C53 'and a protective film are formed. The organic thin film 54 'of F type (Japanese Patent Publication No. 6-90787) having lubrication is formed.

Here, FIG. 13 is a schematic view of a general plasma type film forming (memory) device 500 for obtaining the SSM film forming medium and the memory. That is, the high frequency generator 10 is attached to the electrode provided in the vacuum container 1.
Driven from 0 through amplifier 90. In addition, S is a base body having a three-dimensional curved surface attached to the rotary shaft 2, preferably a sphere, and T is a target.

Similarly, the vapor deposition device 550 of FIG.
M film formation is possible. That is, D.
C, AC generator and controllers (A), (B), from which the material evaporation sources V ₁ , V ₂ are heated by resistance heating or the like,
A film is formed on the rotating substrate S.

Next, a more odorous embodiment of the present invention will be shown.

FIG. 14 shows a sectional view of an embodiment of the SSM manufacturing apparatus of the present invention. In the present embodiment, a pair of wave driving bodies 4a, 4
b is provided, and the frequency of the sound wave and the ultrasonic wave may be made to coincide with each other, or the interference wave mode of the sound wave and the ultrasonic wave may be generated slightly shifted. Furthermore, effective gas 1
55 and an RF power source 150, ie, a CVD method, and other plasma power sources 100, 101 for sputtering the magnetic field generators 5a, 5b and the target material 60, ie, PVD.
Method and a plasma polymerization method are installed, and superposed on the sound wave and the ultrasonic wave to form a more effective film 333 on the sphere 300.
Get.

Here, the spherical surface of the magnetic surface was smooth by any method. In addition, the magnetic anisotropy direction of the metal magnetic particles on the substrate can be further aligned in a desired direction by the action of the magnetic field from the magnet simultaneously with the sound waves, the ultrasonic waves, and the wave motion. This is especially desirable because it can be done.

Further, it is desirable to use different modes when superimposing on the wave according to the specifications of the recording / reproducing characteristics required from the specifications of the apparatus. That is, when reproduction output is particularly required, in-phase mode (longitudinal wave or transverse wave) in which a crystal with higher perfection having excellent orientation in the circumferential direction of the curved surface is grown, particularly when extremely low noise is required. Is an interference wave mode capable of promoting a segregation state and growing uniform and fine crystal grains, and if an average characteristic of both is required, one of the interference wave modes is a sound wave of 0.001 to 20 kHz, Desirably, the other is a superposed wave with 25 to 500 kHz ultrasonic waves. Also, spherical waves due to the excellent shape effect of the acoustic wave element are also used.

As described above, the medium according to the present invention can control the orientation and the texture even if the center line average surface roughness of the substrate is 2 nm or less, and thus the magnetic properties are excellent in uniformity and the noise can be reduced. In particular, when the magnetic layer is formed on such a smooth surface, the signal from the SSM is sufficiently uniform even if evaluated in units of about 1/10 of the track width on the curved surface (0.5 μm or less), and the servo signal Is particularly preferable because it improves the quality of. A film made of BaM that shares a magnetic substance and solid lubrication and is excellent in durability is more preferable as the spherical spin memory (SSM) of the present invention. That is, an SSM device with high density and high reliability of head-memory contact is possible.

The substrate may or may not be textured, but it is more preferable not to texture it because the quality of the servo signal is higher, and the effect of the present invention is more remarkably exhibited.

Since the medium according to the present invention has a low noise and an excellent uniformity of characteristics, it can be used in combination with a magnetoresistive head having a high reproducing sensitivity to obtain from 10 KTPI, 200 KBPI to 40 KBPI.
KTPI, 800KBPI, that is, 2Gb / in ² to 32Gb / i
High density of n ² can realize high S / N, and ² Gb to 32
It is possible to provide a high density GSM / in ² SSM device. In addition, since head-memory contact is possible, considering the design conditions, the high density and high reliability S of 32 Gb / in ² or more is achieved.
SM systems are also possible.

Here, a protective film NiF excellent in durability and lubricity, which is obtained by injecting (surface-treating) wave energy such that its average surface roughness (Ra) becomes larger than that of the substrate, on the surface of the magnetic surface. By providing the above, it is possible to further suppress the increase in the adhesive force and the tangential force during CSS, and it is also strong against the head-medium contact drive, and the reliability can be remarkably improved. This is to prevent the moisture in the air from aggregating between the head and the medium by obtaining a contact surface more effective than the surface roughness and the characteristics peculiar to the substance of the NiF film and the wave energy injection.

In the medium according to the present invention, after the protective film is provided once, the wave energy is injected into the protrusions of nm to μm in the area of several% by using a mask, or a different phase is formed during the formation of the protective film. It can also be obtained by causing nucleation of. As the surface roughness, the maximum protrusion height Rp is set to 20 nm or less, and more preferably 15 nm or less, so that the apparent head-medium spacing can be reduced and the recording density can be increased to 12 Gb / in ² . Can be achieved.

(Embodiment 1) FIG. 7 shows S of an embodiment of the present invention.
FIG. 4 shows a sectional view of the SM. 300 is Si ₃ having a three-dimensional curved surface
It is a non-magnetic substrate such as N ₄ , glass, carbon, Si, SiO ₂ , sapphire, Ti, SiC, NiP plated Al alloy, ceramic, tungsten, tungsten molybdenum, diamond. 51 is Cr, Mo, W
(Anisotropic), CrTi, Nb, Cr-W, Cr-Mo,
Nonmagnetic underlayer such as CrSi, 52 is CoCrTa, CoCrPt, Co
NiPt, multilayered magnetic layer having a single layer or a non-magnetic intermediate layer such as CoNiCr, 53 are NiF, B, C, i- C, B 4 C, Z
a protective layer such as rO ₂ , SiO ₂ , Al ₂ O ₃ or MoS ₂ ,
It is a protective layer having solid lubrication such as WS ₂ . It should be noted that wave energy is injected into the surface of the protective film or perfluoroalkyl polyether having a terminal group of polarity, adsorptivity, reactivity, etc. on its surface, an organic lubricant such as Japanese Patent Publication No. 6-90787 or C
A special lubricant or the like 54 such as ₆₀ series, that is, C ₅₀ , C ₆₀ , C ₇₀ , C ₇₆ , C ₈₄ may be formed. These are selected from the relationship between the head and the medium. Incidentally, BaM333 (Japanese Patent Laid-Open No. 7-44853) having excellent durability may be provided on the sphere 300 by directly treating it with a magnetic film and a lubricating film.

The method of forming the SSM will be described in more detail. In the apparatus of FIG. 14, a rotary support base 2 made of a material such as ceramic and tungsten coated with Teflon is arranged in a vacuum box 1 of a sputtering apparatus. A 0.7-inch Si ₃ N ₄ substrate 300 is mounted on the support base 2, and physical vaporization (PVD) and CVD particles are accompanied by sound energy of ultrasonic waves and ultrasonic waves on the non-magnetic substrate 300. Wave drive bodies 4a and 4b are installed so as to be transmitted. The surface roughness Ra of the substrate was 2 nm, and the substrate temperature was 250 ° C. during film formation. Also, a magnet 5 for applying a magnetic field
A and 5b (electromagnets or permanent magnets) were superposed with sound waves to form a film, depending on the purpose.

It should be noted that the wave drive member (inclination angle θa,
Wave drive members for θb are shown as 10a, 10b and wave 111 respectively) 4a, 4b are annular. Further, in this embodiment, one is 0.001 to 20 kH.
Although the superposition mode is set so that the z sound wave and the other is an ultrasonic wave of 25 to 500 kHz (both are 3 to 7 W), the variable mode is naturally effective. The wave energy applied to the plasma here can be varied from 2 W to 37 W depending on the purpose, and naturally, it is a multiple superposition that weights sound waves and ultrasonic waves.

Further, the evaporation source in the apparatus is CrSi, N
b, Cr-W, Cr-Mo, Cr, CrTi, Mo, W
Target for non-magnetic underlayer or intermediate layer such as FeCoNi
Magnetic material targets such as Cr, CoCrTa, CoCrPt, CoNiCr;
Targets for protective films such as C, B, B ₄ C and W are installed (only the magnetic target 60 is shown in the figure).

Using this apparatus, 1.0 ″ φ, Ra 1.2 nm
Cr underlayer in Ar wave mode on each carbon substrate
Gas pressure 3 mTorr, 40 nm at _{^{15W / cm 2, CoCr 0.}} 16 Pt
_0.4 magnetic layer 35 nm, the C protective layer 20 nm, formed by superimposing a wave energy of 7W in DC magnetron sputtering method, perfluoroalkyl having end adsorptive polar group removed SSM from the vacuum layer Ether formed 3 nm. Each SSM has a gap length of 0.13
A recording / playback separation type head having a thin film head with a track width of 2.5 μm and a track width of 2.5 μm as a recording section and a magnetoresistive element having a magnetic pole of Permalloy as a playback section, and a flying height of 0.052 μm
Table 1 shows the characteristics when recording and reproducing were performed under the conditions of 2.5 Gb / in ² .

[0063]

[Table 1]

That is, the SSM manufacturing method of the present invention involving wave energy to particles during sputter evaporation is S /
It can be seen that N is high and the output fluctuation is as small as 3.5% or less. Since the substrate is a sphere, the highest S / N for matching the spherical wave is obtained, but the S / N is 5 or more in each case,
With an areal recording density on a curved surface as high as 2.5 Gb / in ² , the SSM device operated with 8-7 conversion and PRML with an error rate of 10 ^-9 .

It should be noted that the carbon protective layer is formed by using a mask.
nm etching, and the protrusion of 100 μmφ is 5 in area ratio.
%, The Ra of the medium surface is 2.2 nm,
Especially contact start and stop (CSS) 10
Almost no tangential force was observed after k times.

[0066] (Example 2) substrate 1.2 "using tempered glass of phi, the average film thickness of 22nm to a non-magnetic protective layer was formed by applying a bias of _{-400V (WNb) 0. 5 (} N) _0.5 and with other than the formed a SSM under the same conditions as in example 1. when the protective layer forming also be applied wave, and convex Kiga growth of the main component NbN height 5 nm, surface roughness of the SSM Sa is 1 in Rp
1 nm. When the tangential forces after CSS of the discs of Comparative Examples D after 10 k times were compared with those of SSMA to C and Q, the tangential force increased by 2.7 g in D, whereas in Examples A to C and Q, No increase in tangential force is observed,
It showed extremely good sliding resistance. The magnetic characteristics on the curved surface and the recording / reproducing characteristics also showed good characteristics similar to those of the examples.

(Embodiment 3) The substrate is made of polyimide, PET,
The SSM medium prepared under the same conditions as in Example 1 except that it was made of 1.2 ″ φ organic material such as epoxy-phenol or RESIN for electron microscope was formed in any wave mode of longitudinal wave, transverse wave and interference wave. Also when it did, the same outstanding characteristic as Table 1 was obtained.

Example 4 A DC magnetron sputtering apparatus having targets on both sides of a substrate was used, and the surface roughness Ra was 0.1, 0.2, 0.6, 1, 1.5, 2, 3, 3.
5,7,10 nm outer diameter 5/16 "(≈0.3"), Si
_A substrate temperature of 300 ° C. and an Ar gas pressure of 1 are applied to a ₃ N ₄ substrate (sphere).
mTorr, Cr ₀ with a thickness of 100nm to input power density 10 W / cm ² and wave energy applied at 5W. ₉ Ti _{0. 1} alloy and a nonmagnetic underlayer, Co having a thickness of _{30nm 0. 82 Cr 0. 14} Pt 0. ₀₄ magnetic layer, the film thickness of _{20nm (W 0. 8 -Mo 0} . 2) 0. 3 C 0. 7 sequentially formed by multiple superimposed protective film each wave driver (75 kHz, 10 W) from the longitudinal wave mode did. Finally, FIG.
A fluorine-based gas 155 was formed into a 5 nm thin film by wave CVD and wave plasma polymerization in the apparatus shown in FIG.

In addition, the relationship between the output fluctuation (%) and the surface roughness Ra (nm) when evaluated under the same conditions as in Example 1 was compared with Comparative Example in which no wave energy was superimposed. Even with the roughness, an output fluctuation of 0.7% or less is obtained. This effect is particularly remarkable when Ra is 2 nm or less.

(Example 5) As another method for obtaining a more effective SSM continuous thin film medium as in Example 1, FIG. 15 is a schematic view of a film forming apparatus and a film forming method by another sputtering method of the present invention. Show. That is, Ar ions are turned into plasma by discharge and the target 60 is sputtered. As described above, particles of sputtering atoms, molecules, ions, etc. from the target are subjected to sound energy of ultrasonic waves, ultrasonic waves, and effective gas 155 and auxiliary. RF power supply 150
Is given to the substrate while energizing the energy, making it uniform, and making it highly oriented.

Here, the target material 60 is FeCoNiCr or
A cobalt-based alloy can be used. In order to obtain a magnetic recording medium having a ferromagnetic metal thin film layer as a recording layer, which has high orientation and excellent magnetic characteristics, it is preferable to make the incident direction of the ferromagnetic material oblique to the substrate. What is obtained in consideration of this is especially the magnetic field 5 shown in FIG.
It is a longitudinal wave (arrow 111) obtained by inclining (θa, θb = 15 °; 4a ′, 4b ′) wave drive bodies 10a and 10b provided on the a and 5b surfaces, and further to the SSM, its magnetic flux and R
Another feature is the introduction of a film forming system that superimposes pulses from the F power supply 150. That is, the base body 30
Due to the synergistic effect (condition setting) of the magnetic flux plane perpendicular to 0 and the wave energy, the continuous thin film medium has higher orientation, higher density (fine particle density), and higher S / N (uniform orientation of fine particles). Sex) can be expected. Further, by introducing the pulse film forming system, the perpendicular magnetization and in-plane magnetization of BaM shown in FIG. 7B are also possible.

It should be noted that the tilt drive support 1
Wave drive members 4a, 4a ', 4b, 4b' are attached to 0a and 10b.
(Sound wave, ultrasonic wave) is attached. It is desirable to rotate the substrate during film formation in order to ensure the uniformity of film thickness. At this time, a mask 66 (window) may be provided in front of the substrate. Further, a target material 60 is installed on the electrode portion 61, which is further provided with a power source for plasma generation (RF
0, high-voltage DC 101), support bracket 62, lead wire 6
3, 64, the electrode plate 65, and the magnetic field generators 5a and 5b. Note that the sound wave and ultrasonic drive power sources in the figure are controlled externally. In addition, reference numeral 71 in the drawing is a rotary pump for holding a vacuum, and 70 is a cryopump. These may be turbo pumps.

It should be noted that as the sound wave for energy excitation, a hypersonic wave (microwave ultrasonic wave) of 1 GHz or more which is excellent in production or a magnetron type can also be applied, and a vapor deposition source by an EB method or the like is used instead of the target, and vapor deposition is performed. It is also possible to form a film by the method.

This embodiment will be described in more detail below. The film forming conditions were the same as in Example 4, and the surface roughness was 0.2 nm.
Outer diameter of about 1/3 "(sphere) or 0.335" (8.5
mm) sapphire (tungsten-molybdenum alloy) substrate is rotated at 50 rpm (not shown), while giving overlapping wave energy, CoNiPtCr with a film thickness of 22 nm is tilted at θ = 45 ° and average incident angle is 50 °. Under the same conditions, a 2 nm MoS ₂ solid lubricating and protective layer (wave energy injection) was further formed on the WC having a film thickness of 3 nm to form an SSM.

This SSM is operated at 21.7 Gb / in ² (660KBPI, 33
When evaluated under the conditions of (KTPI), the S / N ratio was 6.3 and the output fluctuation was 0.6%. Especially, the rotation speed is 8800 RPM
The same was true when a 3 nm WC film was treated (wave energy injection) and a C ₆₀ -based special lubricant of 2 nm was formed on the treated surface.

(Embodiment 6) The high-density spherical memory 3 described above
A recording / reproducing separation type magnetic head 200 having a reproducing section 33 and a reproducing section using a giant magnetoresistive effect is incorporated in a special ultra-compact dual SSM apparatus 2000 of the present invention shown in FIGS. This SSM, that is, the wave energy injection type format synchronization of particles (quantum) such as ions, atoms, and electrons can perform positioning with high precision, and further the spacing can be 0.0
24.5Gb / due to being able to achieve 16μm and 0.014μm
SSM operating at high recording density of in ² , 32 Gb / in ²
The equipment could be provided. 182 is a drive unit for high-speed rotation, 184 is a head drive unit for highly accurate positioning,
Reference numeral 185 represents a special decoding signal processing circuit processing system. FIG. 11 shows a multiple SSM system in which these multiple SSM systems of the present invention are connected in multiple stages. Thus, the present system can be further multiplexed and connected, that is, it is promising as a more effective small-sized and large-capacity computer system.

(Embodiment 7) FIGS. 16 (a) and 16 (b) are main schematic sectional views of an embodiment of the method of the present invention by the EB (Electron Beam) method which is excellent in productivity. In this method,
Low energy to high energy electron beams 200a, 200b
The feature is that you can use. That is, the magnetic alloys 203a and 203b in the boats (sauce trays) 202a and 202b are evaporated by using the electron beam (electron beam) from the electron guns 201a and 201b shown in the figure. The wave drive bodies 4a, 4 installed in the space are attached to the evaporated particles.
Chaos and strain (wave energy) are further superposed on the wave energy of sound waves and ultrasonic waves from b, and rotation (7
It is vapor-deposited in a highly oriented and highly dispersed state on a sphere 300 made of 1/2 inch, Si ₃ N ₄ at 0 RPM. Manufacturing method here,
The conditions are almost the same as those in the example, but the vacuum degree of film formation is 10 ⁻⁶ to 10 ⁻⁹ Torr. Further, in this method, the rotating substrate 300 is a multi-sphere body provided in a vacuum chamber.
(A) is continuously fed from another cavity (not shown because it is well known). The wave energy (output) of each of the sound wave and the ultrasonic wave is 1 W or more, and the wave energy frequency of 57 kHz, 15
In the case of W, a sufficient effect was obtained at a vacuum pressure of 10 ^-6 to 10 ^-9 Torr, but when the wave energy of this ultrasonic wave is increased, that is, when the frequency is 57 kHz and 35 W, the vacuum pressure is 1
A sufficient effect was obtained at 0 ^-3 to 10 ^-5 Torr.

(Embodiment 8) This system, that is, FIG. 1, FIG. 2, FIG. 5, FIG. 7, FIG. 9, FIG.
13, FIG. 14, FIG. 15, FIG. 16 (a), and (b), the substrate of S or 300 shown in the figures is made of Si (silicon), N-type silicon (N-type semiconductor), P-type silicon ( By using a semiconductor material such as P-type semiconductor) or GaAs (gallium arsenide), it is possible to easily form, manufacture, or process (plasma etching etc.-target T in this case) on various semiconductors in the same manner as in the above-mentioned embodiments. (60 is removed) Furthermore, various energies composed of particles (quantum) such as ions, electrons, atoms and molecules could be injected. In particular, higher voltage (higher energy) may be used depending on the purpose.

[0079]

According to the present invention, the characteristics are uniform and the noise characteristics are excellent, and the spacing between the head and the medium (spacing) is 0.02 μm or less, particularly, 0.2 mm in the SSM system.
Even if the size is reduced to 014 μm or less, the head floats stably, has high sliding resistance and high density, and it is possible to manufacture and provide an SSM that can obtain a high servo signal even at a high track density. It is possible to provide an SSM system and a memory that can operate even at a high recording density of / in ² . Further, 32 Gb / in ² or more can be obtained from the present SSM system which enables the contact operation between the head and the medium. It should be noted that this system is easy to divert memory and processing to another.

[Brief description of drawings]

FIG. 1 is a sectional view of an SSM device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of the paired SSM device of the present invention.

FIG. 3 is a sectional view for explaining a conventional HDD device.

FIG. 4 is a sectional view for explaining a conventional HDD device.

FIG. 5 is a sectional view of a part of the SSM of the present invention.

FIG. 6 is a sectional view of a part of a conventional HDD.

FIG. 7 is a partial cross-sectional view of the SSM of the present invention.

FIG. 8 is a cross-sectional view of a part of a conventional HDD.

FIG. 9 is a cross-sectional view of the compound SSM of the present invention.

FIG. 10 is a cross-sectional view of a duplex versus SSM of the present invention.

FIG. 11 is a cross-sectional view of a multi-row, concatenated SSM system of the present invention.

FIG. 12 is an explanatory view of a deposition type of a film forming apparatus for SSM of the present invention.

FIG. 13 is an explanatory view of a sputtering for SSM of the present invention.

FIG. 14 is a sectional view of a film forming apparatus for SSM of the present invention.

FIG. 15 is a cross-sectional view of a film forming apparatus of the present invention in which a magnetic field and a wave for SSM are validated.

FIG. 16 is an explanatory view of another EB method suitable for producing the SSM of the present invention.

[Explanation of symbols]

1 ... Vacuum container, 100 ... High frequency generator, 200 ... Head, 300 ... Sphere spin memory Sphere-Spin Memory (S
SM), 400 ... Control circuit system, 500 ... Film forming apparatus, 1500 ... SSM system, 2000 ... Multiple SSM system, 3000 ... Multi-row / connected SSM system.

Continuation of the front page (51) Int.Cl. ⁶ Identification number Reference number within the agency FI Technical display location G11B 11/10 541 9075-5D G11B 11/10 541F 20/12 101 9295-5D 20/12 101 25/00 25 / 00 33/02 33/02 Z (72) Inventor, Yuzuru Hosoe 1-280 Higashi Koikeku, Kokubunji, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (72) Akira Ishikawa 1-280 Higashi Koikeku, Kokubunji, Tokyo Central Research Laboratory, Hitachi, Ltd. (72) Minoru Toriumi 1-280, Higashi Koigokubo, Kokubunji, Tokyo Metropolitan Research Laboratory, Hitachi, Ltd.

Claims (27)

[Claims] 1. A recording film or an electronic circuit element capable of recording information at least as a memory is formed on a surface of a sphere or an ellipsoid or a sphere or an ellipsoid having a hollow, preferably a three-dimensional curved surface. Curved surface memory device. 2. A curved surface memory device comprising the curved surface memory according to claim 1 and a head for accessing the memory. 3. The magnetic recording medium layer or the magneto-optical recording medium layer capable of recording information as at least a thin film memory on the curved surface memory surface according to claim 1 or 2, for indicating a position on the curved surface body in advance. A curved surface memory device having a preformatted area in which address information, tracking signals, data, etc. are formed as servo patterns at regular intervals and a data area for recording and reproducing data. 4. The curved surface memory device according to claim 3, wherein the magnetic recording medium layer is made of a Ba ferrite magnetic material. 5. A curved surface memory device comprising a curved surface memory device according to claim 1, an airtight container for housing the curved surface memory device, and a gas lubricant sealed in the container. 6. The curved surface memory device according to claim 1, further comprising means for rotationally driving the curved surface member of the curved surface memory device. 7. The recording medium layer formed on the surface of the curved body is composed of a single-layer or multi-layer thin film of a magnetic film and a non-magnetic film, and has a NiF thin film as the uppermost layer. The curved surface memory device according to any one of the above. 8. A curved surface type memory device capable of contact-driving a memory head, wherein a base is ceramics, preferably Si ₃ N ₄ via a lower magnetic film or a non-magnetic film of a memory uppermost NiF film. . 9. The method according to claim 4, 5, 6, 7 or 8.
Curved body memory has a lubricating property, a fluorine-based gas or microparticulated _{C 50, C 60, C 70} , C 76, curved body memory device driven in C ₈₄ based gas. 10. A single-layer magnetic film or a multilayer thin film composed of a magnetic film and a non-magnetic film is formed on the surface of a curved body, and in each case, a solid lubricating film such as WS ₂ or MoS ₂ is provided as the uppermost layer. Curved body memory device. 11. The curved surface memory device according to claim 10, wherein the solid lubricating film is used in combination with gas lubrication or liquid lubrication. 12. The curved surface memory device according to claim 1, wherein the head shape for accessing the storage portion has a flat surface, preferably a curved surface, which is controlled to match the curved surface. apparatus. 13. The curved surface memory device according to claim 1, wherein a plurality of heads arranged in multiple rows are used, and the head shape has a crescent-shaped curved surface which is controlled so as to match the curved surface. 14. The curved surface memory device according to claim 13, wherein the head to be used is drive-controlled with at least a pair or a plurality of pairs. 15. The curved surface memory device according to claim 13, wherein the configuration of the head having a plurality of crescent-shaped curved surfaces arranged in multiple rows is drive-controlled with at least one pair or a plurality of pairs. 16. A curved surface memory device according to claim 12, 13, 14 or 15, wherein the head used is an electromagnetic coil type, a magnetoresistive converter or a GMR type. 17. The curved surface memory device according to claim 16, wherein a plurality of curved surface memory devices are used in conjunction with each other. 18. In a film forming system for forming a thin film on a sphere in a vacuum, while applying wave energy to particles propagating in plasma such as vaporized substances in a vapor deposition apparatus and sputter vaporization, and effective gas. , And the displacement of electrons, atoms, molecules, ions, and photons such as photons generated during discharge due to longitudinal waves, transverse waves, and interference waves, that is, the orientation of the particles, or the spherical wave or wave energy that fits the sphere. A method for manufacturing a curved surface memory device, which is obtained by the interaction between a sound wave that gives control and an ultrasonic wave and an electromagnetic wave. 19. A method of forming a thin film on a curved surface, comprising:
A film processing method, wherein the system is surface-treated or energy-injected by controlling spherical energy, that is, wave energy. 20. A method of forming a thin film on a sphere in a vacuum, wherein the film is sequentially formed on a rotating sphere by controlling wave energy. 21. A method of manufacturing a thin film magnetic recording medium, comprising forming a magnetic thin film directly on an information recording medium substrate in vacuum or via an underlayer and an intermediate layer, wherein at least one of the underlayer, the intermediate layer and the magnetic thin film. A method for producing an information recording film on a curved body, characterized by directly or indirectly applying plasma sound waves, preferably sound wave CVD or the like when forming a person. 22. The information recording product on a curved surface body according to claim 18, 19, 20 or 21, which is provided with a plurality of evaporation portions or a plurality of sputtering portions when wave energy, that is, sound waves and ultrasonic waves is not involved. Membrane manufacturing method. 23. A method according to claim 18, 19, 20, 21 or 2.
A curved surface memory device comprising an information recording film on the curved surface obtained by the method 2 and a head. 24. The film forming apparatus for manufacturing a curved surface memory according to claim 18, 19, 20 or 21, wherein effective energy of at least a sound wave and an electromagnetic wave, that is, a material, a substrate, a film or the like is injected or applied as a wave. 25. The recording medium according to any one of claims 18 to 24, wherein energy injection, that is, synchronization by memory formation or synchronization by energy quantization, preferably synchronization signal formation by wave energy is inherent in the recording medium. An information recording medium on a curved curved surface. 26. A curved surface semiconductor memory according to claim 2, wherein wave energy, preferably superposition / wave energy, is injected. 27. The curved surface memory device according to claim 1, wherein a preformatted area for address information or a tracking signal for indicating a position on a curved surface and a data recording area are provided on the curved surface.