JPH097409A - Led signal lamp - Google Patents

Led signal lamp

Info

Publication number
JPH097409A
JPH097409A JP7155794A JP15579495A JPH097409A JP H097409 A JPH097409 A JP H097409A JP 7155794 A JP7155794 A JP 7155794A JP 15579495 A JP15579495 A JP 15579495A JP H097409 A JPH097409 A JP H097409A
Authority
JP
Japan
Prior art keywords
led
blue
green
signal lamp
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7155794A
Other languages
Japanese (ja)
Inventor
Takao Yamada
孝夫 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP7155794A priority Critical patent/JPH097409A/en
Publication of JPH097409A publication Critical patent/JPH097409A/en
Pending legal-status Critical Current

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  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

(57)【要約】 【目的】 青緑色発光部の信号灯が窒化ガリウム系化合
物半導体よりなる青緑色LEDで形成されたLED信号
灯において、青緑色LEDの寿命劣化やピーク波長の変
化を防ぎ、寿命特性に優れたLED信号灯を得る。 【構成】 青緑色LEDが、内部を中空とするパッケー
ジにより封止され、前記パッケージの発光観測面側に
は、青緑色LEDの発光を集光するレンズが設けられて
いる。
(57) [Summary] [Objective] In an LED signal light in which the signal light of the blue-green light emitting portion is formed of a blue-green LED made of a gallium nitride-based compound semiconductor, the life deterioration of the blue-green LED and the change of the peak wavelength are prevented, and the life characteristics are improved. Excellent LED signal lamp is obtained. [Structure] A blue-green LED is sealed by a package having a hollow interior, and a lens for condensing the light emitted from the blue-green LED is provided on the emission observation surface side of the package.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はLED(発光ダイオー
ド)を用いた信号灯に係り、特に窒化物半導体(InX
AlYGa1-X-YN、0≦X、0≦Y、X+Y≦1)よりなる
青緑色のLED信号灯に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a signal light using an LED (light emitting diode), and more particularly to a nitride semiconductor (In X
Al Y Ga 1-XY N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1).

【0002】[0002]

【従来の技術】窒化物半導体はバンドギャップが1.9
5eV〜6.0eVまであり、紫外〜赤色の発光素子の
材料として従来より注目されている。最近、この窒化物
半導体を用いた青色LED、青緑色LEDが実用化さ
れ、フルカラーディスプレイ、LED信号灯等に採用さ
れている。特に、青緑色のLEDを用いた交通信号用の
LED信号灯は、既に設置され試験運用されている県も
ある。LED信号灯は、従来の電球信号灯に比べ、寿命
は10倍以上長く、太陽光が直接信号灯に照射されても
疑似点灯の問題がなく、交通分野では非常に役立ってい
る。
2. Description of the Related Art Nitride semiconductors have a band gap of 1.9.
It is from 5 eV to 6.0 eV, and has been attracting attention as a material for an ultraviolet to red light emitting device. Recently, blue LEDs and blue-green LEDs using this nitride semiconductor have been put to practical use and used in full-color displays, LED signal lights, and the like. In particular, in some prefectures, LED signal lights for traffic signals using blue-green LEDs have already been installed and tested. The LED signal lamp has a life of 10 times or more longer than that of the conventional light bulb signal lamp, and there is no problem of pseudo lighting even when the signal lamp is directly irradiated with sunlight, which is very useful in the traffic field.

【0003】現在LED信号灯に用いられている青緑色
LEDは、InGaNを活性層とするダブルへテロ構造
の窒化物半導体の積層体よりなり、発光波長は480〜
490nmである。この青緑色LEDは、図3に示すよ
うに、カップ形状を有するリードフレーム12に載置さ
れた窒化物半導体LEDチップ11を、耐候性のエポキ
シ樹脂13でレンズ状にモールドされた形状を有してい
る。このように樹脂でモールドされたものは、砲弾型L
EDと称され、他の信号灯色の赤色LED、黄色LED
もこの砲弾型である。
A blue-green LED currently used for an LED signal lamp is composed of a laminated body of nitride semiconductors having a double hetero structure having InGaN as an active layer and has an emission wavelength of 480 to 480.
It is 490 nm. As shown in FIG. 3, this blue-green LED has a shape in which a nitride semiconductor LED chip 11 mounted on a lead frame 12 having a cup shape is molded into a lens shape with a weather resistant epoxy resin 13. ing. Those molded with resin in this way are shell-shaped L
Called ED, red and yellow LEDs of other traffic light colors
This is also a shell type.

【0004】[0004]

【発明が解決しようとする課題】上記のように通常のL
EDは、LEDチップがエポキシ樹脂でレンズ状にモー
ルドされた砲弾型LEDである。しかしながら青緑色L
EDは、赤色LED、黄色LEDに比べて短波長である
ため、赤色や黄色では起こらなかったエポキシ樹脂の劣
化が発生するという欠点がある。エポキシ樹脂が劣化す
ると、チップへの応力や透光性が変化するため、LED
の寿命劣化やピーク波長の変化等の問題が生じる。
As described above, the normal L
The ED is a shell type LED in which an LED chip is molded in a lens shape with an epoxy resin. However, blue-green L
Since the ED has a shorter wavelength than the red LED and the yellow LED, there is a drawback that the epoxy resin deteriorates, which does not occur in the red and the yellow. When the epoxy resin deteriorates, the stress on the chip and the translucency change, so the LED
Problems such as deterioration of life of the device and change of peak wavelength occur.

【0005】従って、本発明は上記欠点を解決するため
に成されたものであり、その目的とするところは、青緑
色LEDの寿命劣化や、ピーク波長の変化等を防ぎ、寿
命特性に優れたLED信号灯を得ることにある。
Therefore, the present invention has been made to solve the above-mentioned drawbacks, and an object thereof is to prevent deterioration of the life of a blue-green LED, change of the peak wavelength, etc., and excellent life characteristics. To get an LED signal light.

【0006】[0006]

【課題を解決するための手段】本発明のLED信号灯
は、青緑色発光部の信号灯が窒化ガリウム系化合物半導
体よりなる青緑色LEDで形成されたLED信号灯にお
いて、前記青緑色LEDが、内部を中空とするパッケー
ジにより封止されていることを特徴とする。
The LED signal lamp of the present invention is an LED signal lamp in which the signal lamp of the blue-green light emitting portion is formed of a blue-green LED made of a gallium nitride-based compound semiconductor, wherein the blue-green LED is hollow inside. It is characterized by being sealed with a package.

【0007】このようなLEDは、一般にキャンタイプ
と称され、図1に示すような構造をとる。キャンタイプ
用の金属のステム2に載置されたLEDチップ1は、電
極がワイヤーボンディングされた後、キャンタイプ用の
金属キャップ3で気密封止される。この金属キャップ3
の発光観測面側には、発光を外部に取り出すためのガラ
ス4が埋め込まれている。
Such an LED is generally called a can type and has a structure as shown in FIG. The LED chip 1 mounted on the can type metal stem 2 is hermetically sealed with the can type metal cap 3 after the electrodes are wire-bonded. This metal cap 3
A glass 4 for taking out emitted light to the outside is embedded on the emission observation surface side of.

【0008】次に本発明のLED信号灯は、前記パッケ
ージの発光観測面側に、青緑色LEDの発光を集光する
レンズ5が設けられていることを特徴とする。図2に示
すように、キャンタイプ用の金属キャップ3の発光観測
面側には、LEDの発光を集光して外部に取り出すため
のレンズ5が設けられている。このレンズ5を設けるこ
とにより、LEDの発光を効率よく外部に取り出すこと
ができる。レンズ5の材料としては、例えば石英ガラ
ス、カリガラス、ソーダガラス、鉛ガラス、バリウムガ
ラス、サファイアガラス等が用いられる。
Next, the LED signal lamp of the present invention is characterized in that a lens 5 for collecting the light emitted from the blue-green LED is provided on the light emission observation surface side of the package. As shown in FIG. 2, a lens 5 is provided on the emission observation surface side of the can type metal cap 3 for collecting the emitted light of the LED and taking it out to the outside. By providing this lens 5, it is possible to efficiently take out the light emission of the LED to the outside. As the material of the lens 5, for example, quartz glass, potash glass, soda glass, lead glass, barium glass, sapphire glass or the like is used.

【0009】[0009]

【作用】青緑色LEDは、赤色LED、黄色LEDに比
べて短波長であるため、従来のように青緑色LEDチッ
プをエポキシ樹脂でモールドして砲弾型のLEDとした
場合、赤色や黄色では起こらなかったエポキシ樹脂の劣
化が発生してしまう。これは短波長光源はエネルギーが
大きく、エポキシ樹脂を変質させてしまうからである。
エポキシ樹脂が劣化すると、チップへの応力や透光性が
変化するため、LEDの寿命劣化やピーク波長の変化等
の問題が生じる。
Since the blue-green LED has a shorter wavelength than the red LED and the yellow LED, when the blue-green LED chip is molded with epoxy resin to form a bullet-shaped LED as in the conventional case, it does not occur in red or yellow. The deterioration of the epoxy resin, which was not present, occurs. This is because the short-wavelength light source has large energy and deteriorates the epoxy resin.
When the epoxy resin deteriorates, the stress on the chip and the translucency change, which causes problems such as the deterioration of the life of the LED and the change of the peak wavelength.

【0010】ところが、本発明ではLEDチップを封止
するのに、エポキシ樹脂ではなくキャンタイプのパッケ
ージを用いるため、上記のようなエポキシ樹脂の劣化に
伴う問題が解決され、寿命特性に優れたLED信号灯が
得られる。
However, in the present invention, the can type package, not the epoxy resin, is used to seal the LED chip, so that the above problems associated with the deterioration of the epoxy resin are solved, and the LED has excellent life characteristics. A signal light is obtained.

【0011】またキャンタイプのLEDは、指向特性が
エポキシ樹脂でモールドされたLEDと異なるため、例
えばキャンタイプの青色LEDと砲弾型の赤色および黄
色LEDの三色を、ドット状に並べてディスプレイを形
成した場合、映像が見えにくくなる。従って、キャンタ
イプ用の青緑色LEDはディスプレイには不向きであ
る。しかしながら信号灯は赤色、青緑色、黄色の三色を
それぞれ単独で発光させるので、ディスプレイのように
他色のLEDとの指向特性の違いを考慮する必要がな
く、青緑色LEDのみをキャンタイプとしても問題はな
い。
Further, since the can type LED has a directional characteristic different from that of the LED molded with epoxy resin, for example, three colors of a can type blue LED and a shell type red and yellow LED are arranged in a dot shape to form a display. If you do, the image will be difficult to see. Therefore, the can type blue-green LED is not suitable for a display. However, since the signal light emits each of the three colors of red, turquoise, and yellow independently, it is not necessary to consider the difference in the directional characteristics with the LEDs of other colors like a display, and even if only the blue-green LED is of a can type. No problem.

【0012】[0012]

【実施例】本発明のLED信号灯を、実施例に基づき説
明する。
EXAMPLES The LED signal lamp of the present invention will be described based on examples.

【0013】[実施例1]SiとZnがドープされたI
nGaN活性層を、n型とp型のAlGaNクラッド層
で挟んだダブルへテロ構造の青緑色LEDチップ1を用
意する。
[Example 1] I doped with Si and Zn
A blue-green LED chip 1 having a double hetero structure in which an nGaN active layer is sandwiched between n-type and p-type AlGaN cladding layers is prepared.

【0014】続いて、図1に示すように、このLEDチ
ップ1をキャンタイプ用の金属のステム2に載置した
後、p電極、n電極をそれぞれのリードにAu線でワイ
ヤーボンディングする。これをキャンタイプ用の金属キ
ャップ3で気密封止する。この金属キャップ3の発光観
測面側には、発光を外部に取り出すためのガラス4が埋
め込まれている。
Subsequently, as shown in FIG. 1, the LED chip 1 is mounted on a can type metal stem 2, and then p-electrodes and n-electrodes are wire-bonded to their respective leads by Au wires. This is hermetically sealed with a can type metal cap 3. A glass 4 for extracting emitted light to the outside is embedded on the light emission observation surface side of the metal cap 3.

【0015】この様にして得られたキャンタイプの青緑
色LEDを、信号用ユニットに組み込み、室外に設置し
て順方向電流50mAにて強制ライフ試験を行ったとこ
ろ、1000時間経過後、電極のオープン、ショートは
なく、また波長の変化、光度の低下は見られなかった。
The can type blue-green LED thus obtained was assembled in a signal unit, installed outdoors and subjected to a forced life test at a forward current of 50 mA. After 1000 hours, the electrode There was no open or short circuit, and there was no change in wavelength or decrease in luminous intensity.

【0016】[実施例2]実施例1と同様の青緑色LE
Dチップ1を用意する。このチップ1を実施例1と同様
にキャンタイプ用の金属のステム2に載置した後、電極
をワイヤーボンディングし、これをキャンタイプ用の金
属キャップ3で気密封止する。この金属キャップ3の発
光観測面側には、図2に示すように、発光を集光して外
部に取り出すためのレンズ5が設けられている。
[Embodiment 2] The same blue-green LE as in Embodiment 1.
Prepare the D chip 1. After mounting the chip 1 on the can type metal stem 2 as in the first embodiment, the electrodes are wire-bonded and hermetically sealed with the can type metal cap 3. As shown in FIG. 2, a lens 5 for collecting the emitted light and taking it out to the outside is provided on the light emission observation surface side of the metal cap 3.

【0017】この様にして得られたキャンタイプの青緑
色LEDを、信号用ユニットに組み込み、実施例1と同
様の条件でライフ試験を行ったところ、1000時間経
過後、電極のオープン、ショートはなく、また波長の変
化、光度の低下は見られなかった。
The can type blue-green LED thus obtained was incorporated in a signal unit and a life test was conducted under the same conditions as in Example 1. After 1000 hours, the electrodes were not opened or shorted. No change in wavelength or decrease in luminous intensity was observed.

【0018】[0018]

【発明の効果】以上説明したように本発明によれば、L
ED信号灯に用いる青緑色LEDを、内部を中空とする
パッケージで封止したキャンタイプLEDとすることに
より、従来のエポキシ樹脂でモールドした砲弾型LED
の樹脂劣化に伴った、LEDの寿命劣化、パワーダウ
ン、ピーク波長の変化等を防止することが可能となり、
寿命特性に優れたLED信号灯が得られる。
As described above, according to the present invention, L
Bullet-type LED molded with conventional epoxy resin by changing the blue-green LED used for the ED signal lamp to a can-type LED sealed in a package with a hollow inside.
It is possible to prevent deterioration of LED life, power down, change of peak wavelength, etc. due to resin deterioration of
An LED signal lamp with excellent life characteristics can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の一LED信号灯に使用される青緑色
LEDの構造を示す模式的な断面図。
FIG. 1 is a schematic cross-sectional view showing the structure of a blue-green LED used for one LED signal lamp of the present invention.

【図2】 本発明の一LED信号灯に使用される青緑色
LEDの構造を示す模式的な断面図。
FIG. 2 is a schematic cross-sectional view showing the structure of a blue-green LED used for one LED signal lamp of the present invention.

【図3】 従来のLED信号灯に使用される青緑色LE
Dの構造を示す模式的な断面図。
FIG. 3 is a blue-green LE used in a conventional LED signal light
FIG. 3 is a schematic cross-sectional view showing the structure of D.

【符号の説明】[Explanation of symbols]

1、11・・・・LEDチップ 2・・・・キャンタイプ用ステム 3・・・・キャンタイプ用キャップ 4・・・・ガラス 5・・・・集光レンズ 12・・・・リードフレーム 13・・・・エポキシ樹脂 1, 11 ... LED chip 2 ... Can type stem 3 ... Can type cap 4 ... Glass 5 ... Condensing lens 12 ... Lead frame 13 ... ···Epoxy resin

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 青緑色発光部の信号灯が窒化ガリウム系
化合物半導体よりなる青緑色LEDで形成されたLED
信号灯において、前記青緑色LEDが、内部を中空とす
るパッケージにより封止されていることを特徴とするL
ED信号灯。
1. An LED in which a signal lamp of a blue-green light emitting portion is a blue-green LED made of a gallium nitride-based compound semiconductor.
In the signal light, the blue-green LED is sealed by a package having a hollow inside.
ED signal light.
【請求項2】 前記パッケージの発光観測面側には、青
緑色LEDの発光を集光するレンズが設けられているこ
とを特徴とする請求項1に記載のLED信号灯。
2. The LED signal lamp according to claim 1, wherein a lens that collects the light emitted from the blue-green LED is provided on the light emission observation surface side of the package.
JP7155794A 1995-06-22 1995-06-22 Led signal lamp Pending JPH097409A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7155794A JPH097409A (en) 1995-06-22 1995-06-22 Led signal lamp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7155794A JPH097409A (en) 1995-06-22 1995-06-22 Led signal lamp

Publications (1)

Publication Number Publication Date
JPH097409A true JPH097409A (en) 1997-01-10

Family

ID=15613587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7155794A Pending JPH097409A (en) 1995-06-22 1995-06-22 Led signal lamp

Country Status (1)

Country Link
JP (1) JPH097409A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289926A (en) * 2001-03-26 2002-10-04 Sanyo Electric Co Ltd White display
US6869813B2 (en) 2000-12-19 2005-03-22 Sharp Kabushiki Kaisha Chip-type LED and process of manufacturing the same
JP2007081430A (en) * 2002-06-19 2007-03-29 Sanken Electric Co Ltd Semiconductor light emitting device, method of manufacturing the same, and reflector for semiconductor light emitting device
US7429757B2 (en) 2002-06-19 2008-09-30 Sanken Electric Co., Ltd. Semiconductor light emitting device capable of increasing its brightness
JP2009518669A (en) * 2005-12-09 2009-05-07 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング OPTICAL COMPONENT, MANUFACTURING METHOD THEREOF, AND COMPOSITE DEVICE HAVING OPTICAL COMPONENT
JP2009187930A (en) * 2008-02-01 2009-08-20 Chia-Cheng Chang Lighting device with low temperature characteristics

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6869813B2 (en) 2000-12-19 2005-03-22 Sharp Kabushiki Kaisha Chip-type LED and process of manufacturing the same
JP2002289926A (en) * 2001-03-26 2002-10-04 Sanyo Electric Co Ltd White display
JP2007081430A (en) * 2002-06-19 2007-03-29 Sanken Electric Co Ltd Semiconductor light emitting device, method of manufacturing the same, and reflector for semiconductor light emitting device
US7429757B2 (en) 2002-06-19 2008-09-30 Sanken Electric Co., Ltd. Semiconductor light emitting device capable of increasing its brightness
JP2009518669A (en) * 2005-12-09 2009-05-07 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング OPTICAL COMPONENT, MANUFACTURING METHOD THEREOF, AND COMPOSITE DEVICE HAVING OPTICAL COMPONENT
JP2009187930A (en) * 2008-02-01 2009-08-20 Chia-Cheng Chang Lighting device with low temperature characteristics

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