JPH0976152A - Wafer polishing method and device - Google Patents
Wafer polishing method and deviceInfo
- Publication number
- JPH0976152A JPH0976152A JP23802195A JP23802195A JPH0976152A JP H0976152 A JPH0976152 A JP H0976152A JP 23802195 A JP23802195 A JP 23802195A JP 23802195 A JP23802195 A JP 23802195A JP H0976152 A JPH0976152 A JP H0976152A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing
- pressure
- back surface
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は多数の半導体装置が
作られていく半導体ウェハー（以下単に、ウェハー、と
称す）の表面の研磨方法および研磨装置に係わり、特に
半導体装置の製造により形成された半導体基板上の凹凸
部を化学的機械的研磨法により研磨して平坦化するウェ
ハー研磨方法およびその研磨装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of polishing a surface of a semiconductor wafer (hereinafter simply referred to as "wafer") in which a large number of semiconductor devices are manufactured and a polishing apparatus, and in particular, it is formed by manufacturing a semiconductor device. The present invention relates to a wafer polishing method and a polishing apparatus for polishing uneven portions on a semiconductor substrate by a chemical mechanical polishing method to flatten the surface.
【０００２】[0002]
【従来の技術】一般に、ウェハーの拡散工程、膜形成工
程等において形成される基板表面の凹凸を研磨により平
坦化する方法が広く用いられ始めている。この方法自体
は、半導体結晶部材をスライスしてなる半導体基板、す
なわちウェハーの母材の鏡面研磨方法と同様であるが、
求められる性能は大きく異なる。2. Description of the Related Art Generally, a method of flattening irregularities on a substrate surface formed in a wafer diffusion step, a film forming step, etc. by polishing has been widely used. This method itself is the same as the semiconductor substrate formed by slicing the semiconductor crystal member, that is, the mirror polishing method for the base material of the wafer,
The required performance varies greatly.
【０００３】すなわち、スライス後の基板表面の鏡面研
磨が最も重要視するのは表面の粗さであるものの、結晶
基板の研磨量やその面内分布はミクロンオーダーの制御
で事足りるのに対し、半導体装置を製造する際に必要と
なる平坦化の場合には、平坦化性能はもちろんのこと研
磨量とその面内均一性が重要であり数〜数十ｎｍ（ナノ
メータ）のオーダで制御する必要がある。That is, although mirror surface polishing of the substrate surface after slicing is most important for the surface roughness, the polishing amount of the crystal substrate and its in-plane distribution are sufficient under the control of the micron order, whereas the semiconductor is semiconductor. In the case of the flattening required when manufacturing the device, not only the flattening performance but also the polishing amount and its in-plane uniformity are important, and it is necessary to control it on the order of several to several tens nm (nanometer). is there.
【０００４】ウェハー拡散工程等において形成される基
板表面の凹凸を研磨により平坦化する方法として、化学
的機械的研磨法が用いられている。A chemical mechanical polishing method is used as a method for flattening the unevenness of the substrate surface formed in the wafer diffusion step or the like by polishing.
【０００５】図６は、この研磨法を用いるウェハー研磨
装置を示す断面図である。円盤状をなす研磨テーブル２
５は回転自在に構成され、研磨テーブル２５の上面には
発泡ウレタンを主成分とする研磨パッド２６が貼られて
いる。研磨テーブル２５の上方には研磨剤を研磨テーブ
ル２５上に供給する研磨剤導入口２７が配設されてい
る。又、研磨対象のウェハー１は、スピンドル４に保持
され、スピンドル４は、回転軸を中心として揺動自在に
構成されている。FIG. 6 is a sectional view showing a wafer polishing apparatus using this polishing method. Disk-shaped polishing table 2
5 is rotatably configured, and a polishing pad 26 containing urethane foam as a main component is attached to the upper surface of the polishing table 25. Above the polishing table 25, a polishing agent inlet 27 for supplying a polishing agent onto the polishing table 25 is arranged. The wafer 1 to be polished is held by a spindle 4, and the spindle 4 is configured to be swingable around a rotation axis.
【０００６】図７は、スピンドル４の部分の従来技術を
示す断面図である。ウェハー１は、スピンドル４に貼り
付けられている吸着面をもつ裏面パッド５を介し、ウェ
ハーの裏面３を保持している。更に、ウェハーの表面２
の研磨中にウェハー１が裏面パッド５から離れるのを防
止するために、リテーナーリング６が備えられている。FIG. 7 is a sectional view showing the prior art of the portion of the spindle 4. The wafer 1 holds the back surface 3 of the wafer via a back surface pad 5 having a suction surface attached to a spindle 4. Furthermore, the surface 2 of the wafer
A retainer ring 6 is provided to prevent the wafer 1 from separating from the backside pad 5 during polishing.
【０００７】このように構成された、ウェハー研磨装置
において、回転する研磨テーブル２５上に研磨剤導入口
２７より研磨剤を流しながら、スピンドル４を研磨テー
ブル２５の方向に移動し下降する。In the thus configured wafer polishing apparatus, the spindle 4 is moved toward the polishing table 25 and lowered while the polishing agent is flown from the polishing agent inlet 27 onto the rotating polishing table 25.
【０００８】次に、スピンドル４を回転させながら、研
磨剤が供給されている研磨パッド２６上にウェハー１の
表面をおしつけてウェハー表面２を研磨する。Next, while rotating the spindle 4, the surface of the wafer 1 is put on the polishing pad 26 to which the polishing agent is supplied, and the wafer surface 2 is polished.
【０００９】ここで、スピンドル４とウェハーの裏面３
の吸着力は、裏面パッド５の吸着性とスピンドル４に加
わる荷重で、決定している。Here, the spindle 4 and the back surface 3 of the wafer
The attraction force of is determined by the attraction of the back surface pad 5 and the load applied to the spindle 4.
【００１０】[0010]
【発明が解決しようとする課題】上述した従来のウェハ
ー研磨装置によるウェハー研磨方法では、研磨するウェ
ハーの裏面と裏面パッドの状態によって、ウェハーの表
面と研磨パッド間の加圧が異なることにより以下の不都
合が生じる。In the above-described conventional wafer polishing method using the wafer polishing apparatus, the pressure applied between the front surface of the wafer and the polishing pad differs depending on the state of the back surface of the wafer to be polished and the state of the back surface pad. Inconvenience occurs.
【００１１】研磨レートは、ウェハーの表面と研磨パッ
ドとの間の加圧状態に依存しており、このウェハーの表
面に加わる圧力は、ウェハー裏面の加圧方法で変動して
しまう。The polishing rate depends on the pressure applied between the front surface of the wafer and the polishing pad, and the pressure applied to the front surface of the wafer varies depending on the pressing method applied to the back surface of the wafer.
【００１２】例えば、ウェハーの裏面が疎水性の場合、
水がはじかれることにより、ウェハーの裏面と裏面パッ
ドとの間に充分な水が行き渡らずシール性が悪化する。
その結果、ウェハーの裏面の保持性及び、ウェハーの裏
面の加圧が不安定になり研磨レートの面内均一性が悪化
する。For example, when the back surface of the wafer is hydrophobic,
Due to the water being repelled, sufficient water does not spread between the back surface of the wafer and the back surface pad, and the sealing property deteriorates.
As a result, the retainability of the back surface of the wafer and the pressurization of the back surface of the wafer become unstable, and the in-plane uniformity of the polishing rate deteriorates.
【００１３】更に、ウェハー研磨処理枚数の増大に伴
い、裏面パッドへ研磨剤、水分等が浸透し、裏面パッド
が膨潤し、ウェハー裏面圧の低下を招き、しいては、ウ
ェハーの表面と研磨パッドの加圧も低下し、研磨レート
及び、面内均一性が悪化するという問題点があった。Further, as the number of wafers to be polished is increased, a polishing agent, moisture and the like permeate into the back surface pad to swell the back surface pad, resulting in a decrease in the back surface pressure of the wafer. However, there was a problem that the pressurization was also lowered and the polishing rate and the in-plane uniformity were deteriorated.
【００１４】従って、本発明の目的は、ウェハーの裏面
と裏面パッドの状態の如何にかかわらず、ウェハーの表
面と研磨パッド間の加圧状態を安定させ、それによるウ
ェハー研磨レートと面内均一性を良好にすることができ
るウェハーの研磨方法及びその装置を提供することであ
る。Therefore, an object of the present invention is to stabilize the pressure applied between the front surface of the wafer and the polishing pad regardless of the states of the back surface of the wafer and the back surface pad, thereby resulting in a wafer polishing rate and in-plane uniformity. It is an object of the present invention to provide a wafer polishing method and an apparatus therefor which can improve the quality of the wafer.
【００１５】[0015]
【課題を解決するための手段】本発明の特徴は、半導体
基板であるウェハーの裏面をウェハー保持部の裏面パッ
ドを介してウェハー保持部に装着し、このウェハーの表
面を研磨テーブルに押しつけて化学的機械的研磨法によ
りウェハーの表面の凹凸を研磨し平坦化する方法におい
て、前記ウェハーの裏面におよぼす裏面圧力をモニター
し、これにより前記ウェハーの表面に加わる荷重を制御
しながら化学的機械的研磨を行うウェハー研磨方法にあ
る。ここで前記ウェハーの裏面と裏面パッドとの間に例
えば圧電素子を圧力モニター可能な部材を設置して前記
裏面圧力をモニターすることができる。この場合、一枚
の半導体ウェハーに対して前記圧力モニター可能な部材
を複数個設置することでウェハー面内の各位置における
裏面圧力をモニターすることもできる。また、前記圧力
モニター可能な部材からの電気的信号によりウェハー保
持部の加圧力すなわちスピンドル荷重を制御して前記半
導体ウェハーの裏面に加わる荷重を制御することができ
る。あるいは前記圧力モニター可能な部材からの電気的
信号により前記半導体ウェハーの裏面に作用する圧力空
気もしくは加圧ガス等の気体の圧力を制御し、これによ
り前記半導体ウェハーの表面に加わる荷重を制御するこ
とができる。A feature of the present invention is that a back surface of a wafer, which is a semiconductor substrate, is attached to a wafer holding portion via a back surface pad of the wafer holding portion, and the front surface of the wafer is pressed against a polishing table to chemically remove it. In the method of polishing unevenness on the surface of a wafer by a mechanical mechanical polishing method to flatten the surface, a back surface pressure applied to the back surface of the wafer is monitored, and thereby chemical mechanical polishing is performed while controlling a load applied to the front surface of the wafer. There is a wafer polishing method. Here, for example, a member capable of pressure monitoring a piezoelectric element may be installed between the back surface of the wafer and the back surface pad to monitor the back surface pressure. In this case, it is also possible to monitor the back surface pressure at each position within the wafer surface by providing a plurality of members capable of monitoring the pressure for one semiconductor wafer. Further, the pressure applied to the wafer holding portion, that is, the spindle load can be controlled by an electric signal from the pressure monitorable member to control the load applied to the back surface of the semiconductor wafer. Alternatively, the pressure of a gas such as pressurized air or a pressurized gas acting on the back surface of the semiconductor wafer is controlled by an electric signal from the pressure monitorable member, thereby controlling the load applied to the front surface of the semiconductor wafer. You can
【００１６】本発明の他の特徴は、ウェハーの表面を化
学的機械的研磨法により研磨するウェハー研磨装置にお
いて、ウェハーの裏面圧を圧力モニター可能は部材によ
り検出して得られた電気的信号により、ウェハー保持部
の加圧力すなわちスピンドル荷重を制御する制御系を具
備するウェハー研磨装置にある。あるいは、ウェハーの
表面を化学的機械的研磨法により研磨するウェハー研磨
装置においてスピンドルと裏面パッド部に圧縮空気ある
いはガスを送る複数の開孔部を設置し、この開孔部をそ
れぞれ通して、ウェハーの裏面の複数箇所にこれら圧力
気体を作用させて前記ウェハーの表面に荷重を加える手
段と、前記ウェハーの裏面の裏面圧力を複数箇所でモニ
ターして前記圧力気体の圧力を制御する手段とを有する
ウェハー研磨装置にある。Another feature of the present invention is that in a wafer polishing apparatus for polishing the surface of a wafer by a chemical mechanical polishing method, the backside pressure of the wafer can be monitored by an electric signal obtained by detecting with a member capable of pressure monitoring. The wafer polishing apparatus is equipped with a control system for controlling the pressure applied to the wafer holder, that is, the spindle load. Alternatively, in a wafer polishing apparatus that polishes the surface of a wafer by a chemical mechanical polishing method, a spindle and a back surface pad section are provided with a plurality of openings for sending compressed air or gas, and the openings are respectively passed through the wafer to form a wafer. And a means for applying a load to the front surface of the wafer by applying these pressure gases to a plurality of positions on the back surface of the wafer, and a means for controlling the pressure of the pressure gas by monitoring the back surface pressure on the back surface of the wafer at a plurality of locations. It is in a wafer polishing machine.
【００１７】[0017]
【発明の実施の形態】次に本発明について図面を参照し
て説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.
【００１８】図１は本発明の第１の実施の形態のウェハ
ー研磨方法およびその装置を示す図であり、ウェハー保
持部にウェハーを装着した状態を示す一部ブロック図を
含む断面図である。FIG. 1 is a view showing a wafer polishing method and an apparatus therefor according to a first embodiment of the present invention, and is a sectional view including a partial block diagram showing a state where a wafer is mounted on a wafer holder.
【００１９】ウェハー１はウェハー保持部の裏面パッド
５を介してウェハーの裏面３をウェハー保持部のスピン
ドル４に装着されており、ウェハーの裏面３と裏面パッ
ド５間の圧力変動をモニターするため圧電素子７が設け
られ、更に圧電素子７からの信号をスピンドル荷重制御
器９へ圧力検出器８を介しフィードバックを行う。又、
スピンドル４の周囲には、図６に示すような研磨テーブ
ル２５上面の研磨パッド２６にウェハーの表面２を当接
させて行う化学的機械的の研磨中にウェハー１が裏面パ
ッド５から外れるのを防止するためにウェハー保持部の
一部としてリテーナーリング６が備えられている。The wafer 1 has the back surface 3 of the wafer mounted on the spindle 4 of the wafer holding portion via the back surface pad 5 of the wafer holding portion, and the piezoelectric material is used to monitor the pressure fluctuation between the back surface 3 of the wafer and the back surface pad 5. An element 7 is provided, and a signal from the piezoelectric element 7 is fed back to the spindle load controller 9 via the pressure detector 8. or,
Around the spindle 4, the wafer 1 is prevented from coming off the back surface pad 5 during the chemical mechanical polishing performed by bringing the front surface 2 of the wafer into contact with the polishing pad 26 on the upper surface of the polishing table 25 as shown in FIG. A retainer ring 6 is provided as part of the wafer holder to prevent it.
【００２０】このようにウェハーの表面２の研磨中のウ
ェハーの裏面３と裏面パッド５間の圧力を前述した圧電
素子７を介し圧力検出器８に信号が送られる。この圧力
検出器８よりスピンドル４荷重を制御する荷重制御器９
により、スピンドル荷重すなわち下方向に向う加圧力を
一定値にコントロールし、ウェハー保持部であるスピン
ドル４により荷重を、ウェハー１全体に加えることで、
研磨レートを一定に保つことが可能となる。これによ
り、ウェハー１の連続研磨中に研磨レートが変動するこ
とがない。In this way, the pressure between the back surface 3 and the back surface pad 5 of the wafer during polishing of the front surface 2 of the wafer is sent to the pressure detector 8 through the piezoelectric element 7 described above. A load controller 9 for controlling the load of the spindle 4 from the pressure detector 8.
By controlling the spindle load, that is, the downward pressure force to a constant value, and by applying the load to the entire wafer 1 by the spindle 4 that is the wafer holding unit,
It is possible to keep the polishing rate constant. Thereby, the polishing rate does not change during the continuous polishing of the wafer 1.
【００２１】例えば、研磨テーブルの回転数を２０ＲＰ
Ｍ，スピンドルの回転数を３０ＲＰＭ，スピンドルの荷
重を０．５ｋｇ／ｃｍ2 としてウェハーの表面上に形成
された熱酸化膜の研磨を行ったとする。このときの研磨
量と、従来技術のウェハー研磨装置における研磨量との
比較結果を図２に示す。For example, the rotation speed of the polishing table is 20 RP.
It is assumed that the thermal oxide film formed on the surface of the wafer is polished with M, the rotation speed of the spindle is 30 RPM, and the load of the spindle is 0.5 kg / cm 2 . FIG. 2 shows a comparison result of the polishing amount at this time and the polishing amount in the conventional wafer polishing apparatus.
【００２２】従来技術のウェハー研磨装置において、白
丸のデータで示すように研磨時間が３分を超過すると裏
面パッドが研磨剤及び水分により膨潤し、ウェハー裏面
圧が低下し、研磨レートが低下していた。In the conventional wafer polishing apparatus, as shown by the data of white circles, when the polishing time exceeds 3 minutes, the back surface pad swells with the abrasive and the water, the back surface pressure of the wafer decreases, and the polishing rate decreases. It was
【００２３】これに対し、本実施の形態によれば、ウェ
ハーの研磨をしながら、裏面パッドとウェハー裏面間の
圧力低下時には、スピンドルの荷重を一定に制御するよ
うに構成されているため、黒丸のデータで示すように、
研磨レートの低下するタイミングが約６分以上に延長す
ることが可能となる。On the other hand, according to the present embodiment, while polishing the wafer, when the pressure between the back surface pad and the back surface of the wafer is reduced, the load of the spindle is controlled to be constant. As shown in the data
It becomes possible to extend the timing at which the polishing rate decreases to about 6 minutes or more.
【００２４】また、本実施の形態によれば、図３におい
て黒丸のデータで示すようにウェハー処理枚数が増加
し、裏面パッドが膨潤してくる影響を回避でき、従来
は、白丸のデータで示すように、ウェハー処理枚数が３
００枚以上において、研磨レートが急峻に低下してくる
が、本発明にはウェハー処理枚数を１０００枚まで、連
続して安定な研磨レートを確保することが可能となっ
た。Further, according to the present embodiment, it is possible to avoid the influence that the number of wafers to be processed increases and the back pad swells as shown by the data of black circles in FIG. 3, and conventionally, the data of white circles are shown. So that the number of wafers processed is 3
Although the polishing rate sharply decreases when the number of wafers is 00 or more, the present invention makes it possible to secure a stable polishing rate continuously up to 1000 wafers.
【００２５】図４は本発明の第２の実施の形態のウェハ
ー研磨方法およびその装置を示す図であり、ウェハー保
持部にウェハーを装着した状態を示す一部ブロック図を
含む断面図である。FIG. 4 is a view showing a wafer polishing method and apparatus according to a second embodiment of the present invention, and is a sectional view including a partial block diagram showing a state in which a wafer is mounted on a wafer holder.
【００２６】この図４に示す第２の実施の形態では、ス
ピンドル４から裏面パッド５を貫通してウェハーの裏面
３に達する複数の開口部１４が形成されておりその端が
圧縮空気あるいは加圧ガス等の圧力気体１１を導入する
ガス導入口１２となっており、またこの圧力気体の圧力
を制御する機構を具備している。他の構成および研磨パ
ッドを上面に有する研磨テーブルや研磨剤を用いた化学
的機械的研磨については図１の第１の実施の形態と同様
である。In the second embodiment shown in FIG. 4, there are formed a plurality of openings 14 penetrating the back surface pad 5 from the spindle 4 and reaching the back surface 3 of the wafer, the ends of which are compressed air or pressurized. A gas inlet 12 for introducing a pressure gas 11 such as a gas is provided, and a mechanism for controlling the pressure of the pressure gas is provided. The other structures and the chemical mechanical polishing using the polishing table having the polishing pad on the upper surface and the polishing agent are the same as those in the first embodiment of FIG.
【００２７】さらに図４では、ウェハーの裏面３とスピ
ンドル４との間であって開孔部１４が存在しない箇所に
複数の圧電素子７が分布して配設している。Further, in FIG. 4, a plurality of piezoelectric elements 7 are arranged in a distributed manner between the back surface 3 of the wafer and the spindle 4 and where the apertures 14 do not exist.
【００２８】このように構成された装置において、スピ
ンドル４を用いウェハーの裏面３を裏面パッド５に押し
つけて研磨している期間で、ウェハーの裏面３と裏面パ
ッド５間の圧力を複数個の圧電素子７で検知モニターす
ることにより得られたる圧力検出器８からの電気信号を
ガス流量制御器１０へ送り、これにより複数のガス導入
口１２から導入される圧縮空気あるいは加圧ガス等の圧
力気体１１のガス流量を制御する。そしてこのガス流量
の制御は、開口部１４内にそれぞれ露出するウェハー１
の裏面３の箇所の表面圧力が所望の値となりウェハーの
裏面３と裏面パッド５間が一定圧力となるようになされ
る。これにより研磨レートを一定に維持することが可能
となる。In the apparatus constructed as described above, the pressure between the back surface 3 of the wafer and the back surface pad 5 is applied to a plurality of piezoelectric elements during a period in which the back surface 3 of the wafer is pressed against the back surface pad 5 using the spindle 4 to polish the wafer. An electric signal from the pressure detector 8 obtained by detection and monitoring by the element 7 is sent to the gas flow rate controller 10, whereby compressed gas such as compressed air or pressurized gas introduced from a plurality of gas introduction ports 12 is supplied. The gas flow rate of 11 is controlled. Then, the control of the gas flow rate is performed by the wafer 1 exposed in each of the openings 14.
The surface pressure at the location of the back surface 3 of the wafer becomes a desired value, and the pressure between the back surface 3 of the wafer and the back surface pad 5 becomes constant. This makes it possible to maintain the polishing rate constant.
【００２９】この第２の実施の形態によれば、ウェハー
の裏面３に加わる面内での圧力差を複数個の圧電素子７
と制御系を介し、各面内に圧縮空気あるいはガスを導入
することで、研磨レートの面内均一性を安定させること
が可能となる。According to the second embodiment, the in-plane pressure difference applied to the back surface 3 of the wafer is determined by the plurality of piezoelectric elements 7.
By introducing compressed air or gas into each surface through the control system, it becomes possible to stabilize the in-plane uniformity of the polishing rate.
【００３０】すなわち、ウェハー１の連続研磨中に裏面
パッド５が面内で膨潤差が発生しても、研磨レートの面
内分布が一定に保つことができる。That is, even if the back pad 5 has a swelling difference in the plane during continuous polishing of the wafer 1, the in-plane distribution of the polishing rate can be kept constant.
【００３１】例えば、研磨テーブルの回転数を２０ＲＰ
Ｍ，スピンドル４の回転数を３０ＲＰＭ，スピンドルの
荷重を０．５ｋｇ／ｃｍ2 として、ウェハー１上に形成
された熱酸化膜の研磨を行ったとする。このときの研磨
量のウェハー面内分布は図５に示すように、従来技術の
ウェハー研磨装置における研磨量のウェハー面内分布
（白丸で示すデータ）と比較して、本実施の形態による
ウェハー面内での研磨量（黒丸で示すデータ）の均一性
が大幅に向上することが可能となった。For example, the rotation speed of the polishing table is 20 RP.
It is assumed that the thermal oxide film formed on the wafer 1 is polished with M, the rotation speed of the spindle 4 is 30 RPM, and the load of the spindle is 0.5 kg / cm 2 . The wafer in-plane distribution of the polishing amount at this time is, as shown in FIG. 5, compared with the in-wafer distribution of the polishing amount in the conventional wafer polishing apparatus (data indicated by white circles). It has become possible to greatly improve the uniformity of the polishing amount (data shown by black circles).
【００３２】上記処理を行う際に用いるガス１１は、研
磨剤を化学反応を起こさないガスが望ましく、窒素，ヘ
リウム，ネオン，アルゴンを用いることができる。The gas 11 used in the above treatment is preferably a gas that does not cause a chemical reaction of the polishing agent, and nitrogen, helium, neon or argon can be used.
【００３３】[0033]
【発明の効果】以上説明したように本発明によれば、ウ
ェハーの表面研磨を行う際に、ウェハーの裏面に加える
圧力が制御可能となる為、ウェハー処理枚数が増大して
も一定の研磨レートでウェハー表面を研磨することが可
能となる。As described above, according to the present invention, when the front surface of a wafer is polished, the pressure applied to the back surface of the wafer can be controlled. Therefore, even if the number of wafers processed increases, the polishing rate remains constant. It becomes possible to polish the wafer surface.
【００３４】また、スピンドルと裏面パッドに圧縮空気
あるいはガスを導入する開口部と圧電素子の組み合わせ
制御方式により、ウェハーの裏面に均一な圧力を加える
ことができ、ウェハーの表面の研磨量を均一にすること
が可能となる。Further, a uniform control can be applied to the back surface of the wafer by the combined control system of the opening for introducing compressed air or gas to the spindle and the back surface pad and the piezoelectric element, and the polishing amount of the front surface of the wafer can be made uniform. It becomes possible to do.
【図１】本発明の第１の実施の形態を示した図である。FIG. 1 is a diagram showing a first embodiment of the present invention.
【図２】本発明の第１の実施の形態に係る研磨時間と研
磨量との関係を従来技術と比較して示した図である。FIG. 2 is a diagram showing a relationship between a polishing time and a polishing amount according to the first embodiment of the present invention in comparison with a conventional technique.
【図３】本発明の第１の実施の形態に係るウェハー処理
枚数と研磨量との関係を従来技術と比較して示した図で
ある。FIG. 3 is a diagram showing a relationship between the number of processed wafers and a polishing amount according to the first embodiment of the present invention in comparison with a conventional technique.
【図４】本発明の第２の実施の形態を示した図である。FIG. 4 is a diagram showing a second embodiment of the present invention.
【図５】本発明の第２の実施の形態に係るウェハー面内
位置と研磨量との関係を従来技術と比較して示した図で
ある。FIG. 5 is a diagram showing a relationship between a wafer in-plane position and a polishing amount according to a second embodiment of the present invention in comparison with a conventional technique.
【図６】化学的機械的研磨法の装置の概要を示した図で
ある。FIG. 6 is a diagram showing an outline of an apparatus for a chemical mechanical polishing method.
【図７】従来技術を示した図である。FIG. 7 is a diagram showing a conventional technique.
１ ウェハー ２ ウェハーの表面 ３ ウェハーの裏面 ４ スピンドル ５ 裏面パッド ６ リテーナーリング ７ 圧電素子 ８ 圧力検出器 ９ 荷重制御器 １０ ガス流量制御器 １１ ガス １２ ガス導入口 １４ 開口部 ２５ 研磨テーブル ２６ 研磨パッド ２７ 研磨剤導入口 1 Wafer 2 Wafer front surface 3 Wafer back surface 4 Spindle 5 Back surface pad 6 Retainer ring 7 Piezoelectric element 8 Pressure detector 9 Load controller 10 Gas flow controller 11 Gas 12 Gas inlet 14 Opening 25 Polishing table 26 Polishing pad 27 Abrasive inlet
Claims (9)
ーの表面の凹凸を平坦化する方法において、前記半導体
ウェハーの裏面におよぼす裏面圧力をモニターし、これ
により前記半導体ウェハーの表面に加わる荷重を制御し
ながら化学的機械的研磨を行うことを特徴とするウェハ
ー研磨方法。1. A method for flattening irregularities on the surface of a semiconductor wafer by a chemical mechanical polishing method, wherein the back pressure applied to the back surface of the semiconductor wafer is monitored to control the load applied to the front surface of the semiconductor wafer. A method for polishing a wafer, which comprises performing chemical mechanical polishing while performing the method.
との間に圧力モニター可能な部材を設置して前記裏面圧
力をモニターすることを特徴とする請求項１記載のウェ
ハー研磨方法。2. The wafer polishing method according to claim 1, wherein a member capable of pressure monitoring is provided between the back surface of the semiconductor wafer and a back surface pad to monitor the back surface pressure.
であることを特徴とする請求項２記載のウェハー研磨方
法。3. The wafer polishing method according to claim 2, wherein the member capable of pressure monitoring is a piezoelectric element.
モニター可能な部材を複数個設置することでウェハー面
内の各位置における裏面圧力をモニターすることを特徴
とする請求項２または請求項３記載のウェハー研磨方
法。4. The back surface pressure at each position within the wafer surface is monitored by providing a plurality of members capable of monitoring the pressure for one semiconductor wafer. The wafer polishing method described.
的信号によりウェハー保持部の加圧力を制御して前記半
導体ウェハーの裏面に加わる荷重を制御することを特徴
とする請求項２または請求項３記載のウェハー研磨方
法。5. The pressure applied to the wafer holder is controlled by an electric signal from the pressure monitorable member to control the load applied to the back surface of the semiconductor wafer. The wafer polishing method described.
的信号により前記半導体ウェハーの裏面に作用する圧力
気体の圧力を制御し、これにより前記半導体ウェハーの
表面に加わる荷重を制御することを特徴とする請求項
２、請求項３または請求項４記載のウェハー研磨方法。6. The pressure of the pressure gas acting on the back surface of the semiconductor wafer is controlled by an electric signal from the pressure monitorable member, and thereby the load applied to the front surface of the semiconductor wafer is controlled. The method of polishing a wafer according to claim 2, claim 3, or claim 4.
スであることを特徴とする請求項６記載のウェハー研磨
方法。7. The wafer polishing method according to claim 6, wherein the pressurized gas is compressed air or pressurized gas.
磨法により研磨するウェハー研磨装置において、前記半
導体ウェハーの裏面圧を圧力モニター可能は部材により
検出して得られた電気的信号により、ウェハー保持部の
加圧力を制御する制御系を具備することを特徴とするウ
ェハー研磨装置。8. A wafer polishing apparatus for polishing the surface of a semiconductor wafer by a chemical mechanical polishing method, wherein the backside pressure of the semiconductor wafer is pressure-monitored by a member capable of pressure monitoring, and the wafer is held by an electric signal obtained. A wafer polishing apparatus comprising a control system for controlling a pressure applied to a wafer.
磨法により研磨するウェハー研磨装置において、前記半
導体ウェハーの裏面の複数箇所に圧力気体を作用させて
前記半導体ウェハーの表面に荷重を加える手段と、前記
半導体ウェハーの裏面の裏面圧力を複数箇所でモニター
して前記圧力気体の圧力を制御する手段とを有すること
を特徴とするウェハー研磨装置。9. A wafer polishing apparatus for polishing the surface of a semiconductor wafer by a chemical mechanical polishing method, wherein a pressure gas is applied to a plurality of positions on the back surface of the semiconductor wafer to apply a load to the surface of the semiconductor wafer. And a means for controlling the backside pressure of the backside of the semiconductor wafer at a plurality of points to control the pressure of the pressure gas, the wafer polishing apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23802195A JP2861883B2 (en) | 1995-09-18 | 1995-09-18 | Wafer polishing method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23802195A JP2861883B2 (en) | 1995-09-18 | 1995-09-18 | Wafer polishing method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0976152A true JPH0976152A (en) | 1997-03-25 |
| JP2861883B2 JP2861883B2 (en) | 1999-02-24 |
Family
ID=17023989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23802195A Expired - Lifetime JP2861883B2 (en) | 1995-09-18 | 1995-09-18 | Wafer polishing method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2861883B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000045993A1 (en) * | 1999-02-02 | 2000-08-10 | Ebara Corporation | Wafer holder and polishing device |
| US6203414B1 (en) | 1997-04-04 | 2001-03-20 | Tokyo Seimitsu Co., Ltd. | Polishing apparatus |
| KR100321172B1 (en) * | 1999-07-01 | 2002-03-18 | 박종섭 | Polishing Slurry For CMP Having The Peizo Ceramic |
| US20150158140A1 (en) * | 2013-12-11 | 2015-06-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Polishing head, chemical-mechanical polishing system and method for polishing substrate |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03267731A (en) * | 1990-03-16 | 1991-11-28 | Matsushita Electric Ind Co Ltd | piezoelectric pressure sensor |
| JPH0542475A (en) * | 1991-08-08 | 1993-02-23 | Hamai Sangyo Kk | Lap board |
| JPH06196456A (en) * | 1992-12-24 | 1994-07-15 | Fujitsu Ltd | Wafer polishing apparatus and wafer polishing method |
| JPH0788758A (en) * | 1993-09-20 | 1995-04-04 | Toshiba Mach Co Ltd | Surface pressure uniformizing device for polishing tool |
| JPH07130689A (en) * | 1993-11-06 | 1995-05-19 | Sony Corp | Semiconductor substrate polishing equipment |
| JP3080500U (en) * | 2001-03-05 | 2001-09-28 | 利夫 安島 | Clothes hanger |
-
1995
- 1995-09-18 JP JP23802195A patent/JP2861883B2/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03267731A (en) * | 1990-03-16 | 1991-11-28 | Matsushita Electric Ind Co Ltd | piezoelectric pressure sensor |
| JPH0542475A (en) * | 1991-08-08 | 1993-02-23 | Hamai Sangyo Kk | Lap board |
| JPH06196456A (en) * | 1992-12-24 | 1994-07-15 | Fujitsu Ltd | Wafer polishing apparatus and wafer polishing method |
| JPH0788758A (en) * | 1993-09-20 | 1995-04-04 | Toshiba Mach Co Ltd | Surface pressure uniformizing device for polishing tool |
| JPH07130689A (en) * | 1993-11-06 | 1995-05-19 | Sony Corp | Semiconductor substrate polishing equipment |
| JP3080500U (en) * | 2001-03-05 | 2001-09-28 | 利夫 安島 | Clothes hanger |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6203414B1 (en) | 1997-04-04 | 2001-03-20 | Tokyo Seimitsu Co., Ltd. | Polishing apparatus |
| KR100475845B1 (en) * | 1997-04-04 | 2005-06-17 | 도쿄 세이미츄 코퍼레이션 리미티드 | Polishing device |
| WO2000045993A1 (en) * | 1999-02-02 | 2000-08-10 | Ebara Corporation | Wafer holder and polishing device |
| US6435956B1 (en) | 1999-02-02 | 2002-08-20 | Ebara Corporation | Wafer holder and polishing device |
| KR100321172B1 (en) * | 1999-07-01 | 2002-03-18 | 박종섭 | Polishing Slurry For CMP Having The Peizo Ceramic |
| US20150158140A1 (en) * | 2013-12-11 | 2015-06-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Polishing head, chemical-mechanical polishing system and method for polishing substrate |
| KR20160027959A (en) * | 2013-12-11 | 2016-03-10 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Polishing head, chemical-mechanical polishing system and method for polishing substrate |
| US10328549B2 (en) | 2013-12-11 | 2019-06-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Polishing head, chemical-mechanical polishing system and method for polishing substrate |
| US11407083B2 (en) | 2013-12-11 | 2022-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Polishing head, chemical-mechanical polishing system and method for polishing substrate |
| US12128522B2 (en) | 2013-12-11 | 2024-10-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Polishing head, chemical-mechanical polishing system and method for polishing substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2861883B2 (en) | 1999-02-24 |
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