JPH0997935A - Magnetoresistance effect element - Google Patents
Magnetoresistance effect elementInfo
- Publication number
- JPH0997935A JPH0997935A JP7276519A JP27651995A JPH0997935A JP H0997935 A JPH0997935 A JP H0997935A JP 7276519 A JP7276519 A JP 7276519A JP 27651995 A JP27651995 A JP 27651995A JP H0997935 A JPH0997935 A JP H0997935A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetoresistive effect
- effect element
- layer
- artificial lattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000694 effects Effects 0.000 title claims abstract description 47
- 230000005291 magnetic effect Effects 0.000 claims abstract description 80
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 46
- 239000010409 thin film Substances 0.000 claims description 25
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 5
- 229910003266 NiCo Inorganic materials 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims 2
- 229910002546 FeCo Inorganic materials 0.000 claims 1
- 230000005290 antiferromagnetic effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 36
- 238000010438 heat treatment Methods 0.000 abstract description 20
- 229910052702 rhenium Inorganic materials 0.000 abstract description 11
- 230000006866 deterioration Effects 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 229910052759 nickel Inorganic materials 0.000 abstract description 5
- 239000007787 solid Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000696 magnetic material Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910015136 FeMn Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910003336 CuNi Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 241000981595 Zoysia japonica Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁気抵抗効果素子
に関し、詳細には、磁気媒体などにおいて、磁界強度を
信号として読み取るための磁気抵抗効果素子に関する。
特に、本発明は、小さい外部磁場で抵抗変化率が大き
く、２層以上の磁性層が非磁性層を介して積層された人
工格子磁気抵抗効果膜を使った磁気抵抗効果ヘッドと、
検出される磁界の変化として上記磁気抵抗効果素子の抵
抗変化率を検出する方法を備えた磁気抵抗検出システム
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element, and more particularly to a magnetoresistive effect element for reading magnetic field strength as a signal in a magnetic medium or the like.
In particular, the present invention provides a magnetoresistive head using an artificial lattice magnetoresistive film having a large resistance change rate with a small external magnetic field and two or more magnetic layers laminated with a nonmagnetic layer interposed therebetween.
The present invention relates to a magnetoresistive detection system including a method of detecting the resistance change rate of the magnetoresistive effect element as a change in the detected magnetic field.
【０００２】[0002]
【従来の技術】近年、磁気センサ−の高感度化及び磁気
記録における高密度化が進められており、これに伴い、
磁気抵抗効果型磁気センサ−(以下“ＭＲセンサ−”と
いう)及び磁気抵抗効果型磁気ヘッド(以下“ＭＲヘッ
ド”という)の開発が盛んに進められている。2. Description of the Related Art In recent years, high sensitivity of magnetic sensors and high density of magnetic recording have been promoted.
Development of a magnetoresistive effect type magnetic sensor (hereinafter referred to as "MR sensor") and a magnetoresistive effect type magnetic head (hereinafter referred to as "MR head") has been actively pursued.
【０００３】ところで、ＭＲセンサ−もＭＲヘッドも、
磁性材料からなる読み取りセンサ−部の抵抗変化により
外部磁界信号を読みだすものであるが、このＭＲセンサ
−及びＭＲヘッドは、記録媒体との相対速度が再生出力
に依存しないことから、ＭＲセンサ−では高感度が得ら
れ、また、ＭＲヘッドでは、高密度磁気記録においても
高い出力が得られるという特長がある。By the way, both the MR sensor and the MR head are
An external magnetic field signal is read out by a resistance change of a reading sensor section made of a magnetic material. However, since the MR sensor and the MR head have a relative speed with a recording medium which does not depend on a reproduction output, the MR sensor- Has high sensitivity, and the MR head has a feature that high output can be obtained even in high density magnetic recording.
【０００４】最近、非磁性層を介して２層以上の複数の
磁性薄膜からなり、外部磁場で大きな磁気抵抗変化を示
す人工格子磁気抵抗効果膜が発表された［“フィジカル
レビュ−レタ−(Phys.Rev.Lett.)”第61巻(1988年)の
第2472頁参照］。なお、この人工格子磁気抵抗効果膜は
、外部磁場により数％〜数10％の大きい抵抗変化率を
示す。そして、この人工格子磁気抵抗効果膜を使用した
“高感度で高出力なＭＲヘッド”が提案されている。Recently, an artificial lattice magnetoresistive effect film has been announced which is composed of a plurality of magnetic thin films of two or more layers with a nonmagnetic layer interposed therebetween and exhibits a large magnetoresistive change in an external magnetic field ["Physical Reviewer (Phys)". Rev. Lett.) ", Vol. 61 (1988), p. 2472]. The artificial lattice magnetoresistive film exhibits a large resistance change rate of several% to several tens% due to an external magnetic field. A "high-sensitivity and high-output MR head" using this artificial lattice magnetoresistive film has been proposed.
【０００５】[0005]
【発明が解決しようとする課題】しかし、前記の人工格
子磁気抵抗効果素子において、非磁性層としてＣｕ材を
用い、磁性層としてＮｉ系磁性体を使用した人工格子膜
では、ＣｕとＮｉとが互いに固溶する組み合せであると
ころから、熱処理によりＣｕ／ＮｉＦｅ界面で拡散が起
こり、人工格子の磁気特性が劣化し、抵抗変化率が低下
(劣化)してしまうという問題があった。However, in the artificial lattice magnetoresistive effect element described above, in the artificial lattice film in which the Cu material is used as the non-magnetic layer and the Ni-based magnetic material is used as the magnetic layer, Cu and Ni are separated from each other. Because of the combination of solid solutions, diffusion occurs at the Cu / NiFe interface due to heat treatment, which deteriorates the magnetic properties of the artificial lattice and reduces the resistance change rate.
There was a problem of (deterioration).
【０００６】本発明は、上記問題点に鑑み成されたもの
であって、その目的とするところは、熱処理によっても
抵抗変化率が劣化しない人工格子磁気抵抗効果膜及びこ
の人工格子磁気抵抗効果膜を用いた磁気抵抗検出システ
ムを提案することにある。The present invention has been made in view of the above problems, and an object thereof is an artificial lattice magnetoresistive effect film in which the rate of change in resistance is not deteriorated even by heat treatment, and the artificial lattice magnetoresistive effect film. The purpose is to propose a magnetoresistive detection system using.
【０００７】[0007]
【課題を解決するための手段】本発明は、２層以上の磁
性層とＣｕ系非磁性層が積層された人工格子磁気抵抗効
果素子において、特に熱処理による抵抗変化率の劣化を
防ぐため、Ｃｕ系非磁性層又はＮｉ系磁性層にＲｅ，Ｃ
ｒを特定量(0.01〜10原子％)添加することを特徴とす
る。According to the present invention, in an artificial lattice magnetoresistive element in which two or more magnetic layers and a Cu-based nonmagnetic layer are laminated, in order to prevent deterioration of the resistance change rate due to heat treatment, Cu Re, C in Ni-based non-magnetic layer or Ni-based magnetic layer
It is characterized in that r is added in a specific amount (0.01 to 10 atom%).
【０００８】[0008]
【発明の実施の形態】以下、本発明に係る人工格子磁気
抵抗効果素子について詳細に説明する。まず、本発明で
Ｃｕ系非磁性層又はＮｉ系磁性層に添加する「Ｒｅ，Ｃ
ｒ」の作用について説明すると、Ｒｅ，Ｃｒは、Ｃｕ及
びＮｉと非固溶の材料であるところから、例えばＣｕ
(Ｒｅ)タ−ゲットを用いてスパッタリングすると、Ｃｕ
の粒界にＲｅが析出した膜が生成する。この膜生成を利
用して、NiFe／Ｃｕ(Ｒｅ)／NiFe膜を作製し、これを熱
処理すると、Ｃｕ粒界にＲｅが析出しているために、Ni
Feは、Ｃｕ層への粒界拡散がし難くなり、Ｃｕ／NiFe界
面での拡散が生じることがなく、その結果、磁気特性の
劣化が抑制されることになる。BEST MODE FOR CARRYING OUT THE INVENTION The artificial lattice magnetoresistive effect element according to the present invention will be described in detail below. First, in the present invention, “Re, C added to the Cu-based nonmagnetic layer or Ni-based magnetic layer
The action of “r” will be described. Since Re and Cr are materials that do not form a solid solution with Cu and Ni, for example, Cu and
When sputtering using a (Re) target, Cu
A film in which Re is precipitated at the grain boundaries of is generated. By utilizing this film formation, a NiFe / Cu (Re) / NiFe film was prepared, and when this was heat-treated, Re was precipitated at the Cu grain boundary.
Fe becomes difficult to diffuse into the Cu layer at the grain boundaries, and diffusion at the Cu / NiFe interface does not occur. As a result, deterioration of magnetic properties is suppressed.
【０００９】以上、Ｃｕ系非磁性層又はＮｉ系磁性層に
添加する“Ｒｅ”について説明したが、このＲｅのかわ
りにＣｒを用いた場合でも、上記と同一のメカニズムで
磁気特性の劣化を抑制することができる。The "Re" added to the Cu-based nonmagnetic layer or the Ni-based magnetic layer has been described above. Even when Cr is used instead of Re, deterioration of magnetic characteristics is suppressed by the same mechanism as described above. can do.
【００１０】次に、本発明で添加するＲｅ，Ｃｒの濃度
について説明すると、本発明において、添加元素：Ｒ
ｅ，Ｃｒの濃度としては、0.01原子％から10原子％であ
る。この濃度が0.01原子％未満であると、粒界に析出す
るＲｅ，Ｃｒの量が少なすぎ、拡散が起こり易く、耐熱
性もあまり良くないので好ましくない。逆に10原子％を
超えると、耐熱性は良好となるが、人工格子膜の比抵抗
率が高くなり、抵抗変化率が減少してしまうので好まし
くない。Next, the concentrations of Re and Cr added in the present invention will be explained. In the present invention, the additive element: R
The concentration of e and Cr is 0.01 atom% to 10 atom%. If the concentration is less than 0.01 atomic%, the amounts of Re and Cr precipitated at the grain boundaries are too small, diffusion easily occurs, and the heat resistance is not so good, which is not preferable. On the other hand, if it exceeds 10 atomic%, the heat resistance is improved, but the specific resistance of the artificial lattice film increases and the rate of resistance change decreases, which is not preferable.
【００１１】以下、本発明の磁性薄膜に用いる非磁性薄
膜及び磁性薄膜について説明すると、本発明において、
非磁性薄膜を構成する非磁性体の種類としては、Ｃｕな
いしはＣｕを主成分とする合金の使用が好ましい。具体
的には、ＣｕＡｕ，ＣｕＮｉ，ＣｕＰｄ，ＣｕＶのＣｕ
系合金が望ましい。The non-magnetic thin film and the magnetic thin film used for the magnetic thin film of the present invention will be described below.
As the type of non-magnetic material forming the non-magnetic thin film, it is preferable to use Cu or an alloy containing Cu as a main component. Specifically, Cu of CuAu, CuNi, CuPd, CuV
System alloys are desirable.
【００１２】本発明において、非磁性薄膜の膜厚として
は、50オングストロ−ム以下が好ましい。その理由は、
一般に膜厚が50オングストロ−ムを超えると、この非磁
性薄膜により抵抗が決ってしまい、スピンに依存する散
乱効果が相対的に小さくなってしまい、その結果、磁気
抵抗変化率が小さくなってしまうからである。一方、非
磁性薄膜の膜厚が４オングストロ−ム以下になると、磁
性薄膜間の磁気相互作用が大きくなりすぎ、また、磁気
的な直接接触状態(ピンホ−ル)の発生が避けられないこ
とから、両磁性薄膜の磁化方向の反平行状態が生じにく
くなるので好ましくない。In the present invention, the thickness of the nonmagnetic thin film is preferably 50 angstroms or less. The reason is,
Generally, when the film thickness exceeds 50 angstroms, the resistance is determined by this non-magnetic thin film, the spin-dependent scattering effect becomes relatively small, and as a result, the magnetoresistance change rate becomes small. Because. On the other hand, if the thickness of the non-magnetic thin film is 4 angstroms or less, the magnetic interaction between the magnetic thin films becomes too large, and the magnetic direct contact state (pinhole) cannot be avoided. The antiparallel state of the magnetization directions of both magnetic thin films hardly occurs, which is not preferable.
【００１３】本発明の磁性薄膜を構成する磁性体の種類
としては、Ｎｉ，ＮｉＦｅ，ＮｉＣｏ，ＮｉＦｅＣｏ又
はこれらを主成分とする合金の使用が好ましい。各磁性
薄膜の膜厚の上限は、200オングストロ−ムが好まし
い。その理由は、膜厚を200オングストロ−ム以上とし
ても効果は落ちないが、膜厚の増加に伴って効果が増大
することもなく、逆に該膜の作製上無駄が多く、不経済
であるからである。As the kind of magnetic material constituting the magnetic thin film of the present invention, it is preferable to use Ni, NiFe, NiCo, NiFeCo or an alloy containing these as the main components. The upper limit of the thickness of each magnetic thin film is preferably 200 angstrom. The reason is that the effect does not decrease even if the film thickness is 200 angstroms or more, but the effect does not increase as the film thickness increases, and conversely there is much waste in the production of the film, which is uneconomical. Because.
【００１４】一方、各磁性薄膜の膜厚の下限について
は、本発明で特に限定するものではなく、任意である
が、４オングストロ−ム以下では、キュリ−点が室温よ
り低くなり、実用性に問題が生じる。そして、４オング
ストロ−ム以上とすれば、膜厚を均一に保つことが容易
となり、膜厚も良好となる。また、飽和磁化の大きさが
小さくなりすぎることもない。On the other hand, the lower limit of the film thickness of each magnetic thin film is not particularly limited in the present invention and is arbitrary, but at 4 angstroms or less, the Curie point becomes lower than room temperature, which is not practical. The problem arises. When the thickness is 4 angstroms or more, it becomes easy to keep the film thickness uniform and the film thickness becomes good. Further, the magnitude of saturation magnetization does not become too small.
【００１５】なお、磁気抵抗効果素子中に存在する磁性
薄膜の磁気特性については、直接測定することができな
いので、通常次のようにして測定する。即ち、測定すべ
き磁性薄膜を磁性薄膜の合計厚さが200〜400オングスト
ロ−ム程度になるまで非磁性薄膜と交互に蒸着して測定
用サンプルを作製し、これについて磁気特性を測定する
手段を採用する。なお、この場合、磁性薄膜の厚さ及び
非磁性薄膜の厚さ並びに非磁性薄膜の組成については、
磁気抵抗効果測定素子におけるものと同じにする。Since the magnetic characteristics of the magnetic thin film present in the magnetoresistive element cannot be directly measured, it is usually measured as follows. That is, a magnetic thin film to be measured is alternately deposited with a non-magnetic thin film until the total thickness of the magnetic thin film reaches about 200 to 400 angstroms to prepare a sample for measurement, and a means for measuring the magnetic characteristics of the sample is prepared. adopt. In this case, regarding the thickness of the magnetic thin film and the thickness of the non-magnetic thin film and the composition of the non-magnetic thin film,
The same as in the magnetoresistive effect measuring element.
【００１６】磁性薄膜又は非磁性薄膜の各膜厚は、透過
型電子顕微鏡、走査型電子顕微鏡、オ−ジェ電子分光分
析等により測定することができる。また、薄膜の結晶構
造は、Ｘ線回析や高速電子線回析等により確認すること
ができる。The thickness of each of the magnetic thin film and the non-magnetic thin film can be measured by a transmission electron microscope, a scanning electron microscope, Auger electron spectroscopy or the like. The crystal structure of the thin film can be confirmed by X-ray diffraction, high-speed electron beam diffraction, or the like.
【００１７】[0017]
【作用】本発明に係る人工格子磁気抵抗効果素子では、
前記したとおり、非磁性層又は磁性層中に“Ｒｅ又はＣ
ｒ”が0.01〜10原子％混合している点を必須構成要件と
するものである。このＲｅ，Ｃｒは、Ｃｕ及びＮｉと非
固溶であり、例えばＣｕにＲｅを添加して成膜すると、
Ｃｕの粒界にＲｅが析出してＮｉが拡散しにくくなり、
そのため人工格子磁気抵抗効果膜の耐熱性が向上する作
用が生じる。また、ＮｉにＲｅを添加して成膜した場合
でも、Ｎｉ粒界にＲｅが析出してＣｕが拡散しにくくな
り、同じく耐熱性が向上する作用が生じる。In the artificial lattice magnetoresistive effect element according to the present invention,
As described above, “Re or C is added in the non-magnetic layer or the magnetic layer.
The essential constitutional requirement is that r ″ is mixed in an amount of 0.01 to 10 atomic%. Re and Cr are non-solid solutions with Cu and Ni. For example, when Re is added to Cu, a film is formed. ,
Re precipitates at the Cu grain boundaries, making it difficult for Ni to diffuse,
Therefore, the effect of improving the heat resistance of the artificial lattice magnetoresistive film occurs. Further, even when Re is added to Ni to form a film, Re is precipitated at the Ni grain boundary and Cu is less likely to diffuse, and the same effect of improving heat resistance occurs.
【００１８】ここで、本発明に係る人工格子磁気抵抗効
果素子について、従来技術と対比して更に詳細に説明す
る。ハ−ドディスクドライブヘッドでは、高密度磁気記
録及び小型化が進み、それと共に媒体上で読み書きされ
る磁気エリアが小さくなってきている。これに対して、
大きな抵抗変化を示す人工格子磁気抵抗効果素子を用い
た出力の大きなＭＲヘッドがこれまでに提案されてい
る。Here, the artificial lattice magnetoresistive element according to the present invention will be described in more detail in comparison with the prior art. In hard disk drive heads, high-density magnetic recording and miniaturization are progressing, and the magnetic area read / written on the medium is becoming smaller accordingly. On the contrary,
An MR head having a large output using an artificial lattice magnetoresistive element exhibiting a large resistance change has been proposed so far.
【００１９】このような人工格子磁気抵抗効果素子で
は、非磁性層を介して磁性層の向きが平行，反平行にな
ったときに膜の抵抗が変化する。そして、非磁性材料と
しては、大きな抵抗変化を示すＣｕ系人工格子が使用さ
れており、一方、磁性材料としては、小さい外部磁界で
磁化が反転するような軟磁性を示すＮｉＦｅ，ＮｉＦｅ
Ｃｏ系合金が使用されているが、この２種類の材料を組
み合わせた“NiFe／Cu人工格子、又は、NiFeCo／Cu人工
格子”では、ＮｉとＣｕが固溶するため、熱処理すると
抵抗変化率が劣化してしまうという欠点を有している。In such an artificial lattice magnetoresistive effect element, the resistance of the film changes when the directions of the magnetic layers are parallel or antiparallel via the nonmagnetic layer. As the non-magnetic material, a Cu-based artificial lattice exhibiting a large resistance change is used, while as the magnetic material, NiFe and NiFe exhibiting soft magnetism such that the magnetization is inverted by a small external magnetic field.
Co-based alloys are used, but in the "NiFe / Cu artificial lattice or NiFeCo / Cu artificial lattice" that combines these two types of materials, Ni and Cu form a solid solution, so the rate of resistance change when heat-treated It has the drawback of deterioration.
【００２０】この人工格子を用いてＨＤＤ用磁気ヘツド
を製造する場合、ＰＲ工程で300℃前後の熱が人工格子
磁気抵抗効果素子に加わることになり、この熱処理によ
り抵抗変化率が劣化してしまう。例えばＮｉＦｅ／Ｃｕ
膜では、250℃まで熱が加わると抵抗変化率が劣化する
ことになる。When a magnetic head for HDD is manufactured using this artificial lattice, heat of about 300 ° C. is added to the artificial lattice magnetoresistive effect element in the PR process, and this heat treatment deteriorates the resistance change rate. . For example, NiFe / Cu
When the film is heated up to 250 ° C, the resistance change rate deteriorates.
【００２１】これに対し、本発明に係る人工格子磁気抵
抗効果素子のように、Ｃｕ層にＲｅを加えたNiFe／Cu(R
e)膜では、Ｃｕ層粒界にＲｅが析出し、これによりＮｉ
Ｆｅの拡散が抑制され、250℃以上の熱が加わっても抵
抗変化率が劣化することはない。Ｃｕ層にＣｒを添加混
合した場合でも、また、磁性層にＲｅ又はＣｒを添加混
合した場合でも、同じく熱処理により抵抗変化率が劣化
することがない。On the other hand, as in the artificial lattice magnetoresistive effect element according to the present invention, NiFe / Cu (R
e) In the film, Re precipitates at the grain boundary of the Cu layer, which causes Ni
The diffusion of Fe is suppressed, and the resistance change rate does not deteriorate even when heat of 250 ° C. or higher is applied. Even when Cr is added and mixed in the Cu layer, and when Re or Cr is added and mixed in the magnetic layer, the resistance change rate is not deteriorated by the heat treatment.
【００２２】[0022]
【実施例】次に、本発明の実施例を比較例と共に挙げ、
本発明で生じる効果を含めて具体的に説明する。Next, examples of the present invention will be described together with comparative examples.
The effect including the effects of the present invention will be specifically described.
【００２３】図１は、本発明に係る磁気抵抗効果素子の
１例を示す斜視図である。本発明に係る磁気抵抗効果素
子は、図１に示すように、非磁性層２と磁性層３を互い
に積層した人工格子膜１と、それに続く電極４によって
構成されている。FIG. 1 is a perspective view showing an example of a magnetoresistive effect element according to the present invention. As shown in FIG. 1, the magnetoresistive effect element according to the present invention comprises an artificial lattice film 1 in which a nonmagnetic layer 2 and a magnetic layer 3 are laminated on each other, and an electrode 4 following the artificial lattice film 1.
【００２４】（比較例）最初に、比較のため、非磁性層
として純Ｃｕ母材を用いた人工格子膜を作製し、この耐
熱性を調べた。即ち、NiFe(100Å)／Ｃｕ(25Å)／NiFe
(100Å)／FeMn(100Å)人工格子膜をガラス基板上にスパ
ッタリング法で成膜し、この膜をパタ−ン幅５μｍに微
細加工した後、150〜350℃で１時間、真空中で熱処理
し、その際の熱処理温度に対する抵抗変化率を測定し
た。Comparative Example First, for comparison, an artificial lattice film using a pure Cu base material as a non-magnetic layer was prepared, and its heat resistance was examined. That is, NiFe (100Å) / Cu (25Å) / NiFe
(100Å) / FeMn (100Å) artificial lattice film is formed on a glass substrate by sputtering method, and this film is finely processed to a pattern width of 5 μm, and then heat-treated in vacuum at 150 to 350 ° C for 1 hour. The rate of resistance change with respect to the heat treatment temperature at that time was measured.
【００２５】なお、抵抗測定は、外部磁界を面内に電流
と垂直方向になるように印加しながら、−500〜500Ｏｅ
まで変化させたときの抵抗を４端子法により測定し、そ
の抵抗から磁気抵抗変化率△Ｒ／Ｒを求めた。抵抗変化
率△Ｒ／Ｒは、最大抵抗値をＲmax、最小抵抗値をＲmin
とし、次式により計算した。The resistance measurement was carried out by applying an external magnetic field in the plane in a direction perpendicular to the current, while measuring -500 to 500 Oe.
The resistance when the temperature was changed to 4 was measured by the four-terminal method, and the magnetoresistance change rate ΔR / R was determined from the resistance. Resistance change rate ΔR / R is the maximum resistance value Rmax and the minimum resistance value Rmin
And calculated by the following formula.
【００２６】[0026]
【数１】 [Equation 1]
【００２７】この比較例である人工格子膜の熱処理前の
抵抗変化率は3.9％であった。図２は、熱処理後の熱処
理温度と抵抗変化率の関係を示すグラフである。図２か
ら明らかなように、純Ｃｕ層を使用した人工格子膜(○
印：比較例)では、200℃より高温になると抵抗変化が劣
化し始め、300℃では、3.0％とかなり小さくなってしま
うことが認められた。The resistance change rate of the artificial lattice film of this comparative example before the heat treatment was 3.9%. FIG. 2 is a graph showing the relationship between the heat treatment temperature after the heat treatment and the resistance change rate. As is clear from FIG. 2, an artificial lattice film using a pure Cu layer (○
In the mark (comparative example), it was confirmed that the resistance change started to deteriorate at temperatures higher than 200 ° C., and at 300 ° C., it became considerably small, 3.0%.
【００２８】（実施例）本実施例では、非磁性層として
“ＣｕにＲｅを0.01原子％，１原子％，10原子％”をそ
れぞれ添加したNiFe(100Å)／Ｃｕ(Ｒｅ)(25Å)／NiFe
(100Å)／FeMn(100Å)人工格子膜 ”を作製し、この膜
の熱処理温度に対する抵抗変化率を前記比較例と同一測
定法で測定した。その測定結果を図２に表示する。な
お、図２において、Ｃｕ層にＲｅを0.01原子％，1.0原
子％，10原子％添加した人工格子膜の「熱処理温度と抵
抗変化率の関係」をそれぞれ×印，△印，□印で示し
た。(Embodiment) In this embodiment, NiFe (100Å) / Cu (Re) (25Å) / wherein "0.01%, 1% and 10% by atom of Re is added to Cu as a nonmagnetic layer" is added. NiFe
(100Å) / FeMn (100Å) artificial lattice film "was prepared, and the rate of change in resistance of this film with respect to the heat treatment temperature was measured by the same measurement method as in the comparative example. The measurement result is shown in FIG. In No. 2, the "relationship between heat treatment temperature and resistance change rate" of the artificial lattice film in which Re was added to the Cu layer in 0.01 atom%, 1.0 atom% and 10 atom% is shown by x, Δ and □, respectively.
【００２９】Ｒｅを0.01原子％添加した人工格子膜(×
印)では、熱処理が250℃以上になると、比較例に比して
若干耐熱性の向上が認められる。また、１％原子添加し
た人工格子膜(△印)では、膜の比抵抗値が少し大きくな
るため、熱処理前の抵抗変化率も小さくなるが、耐熱性
は向上し、抵抗変化率の減少の度合は小さい。10原子％
添加した人工格子膜(□印)では、さらに耐熱性は向上す
るが、膜の比抵抗値が大きく、熱処理前の抵抗変化率も
少々小さくなっている。Artificial lattice film containing 0.01 atomic% of Re (×
In (), when the heat treatment is performed at 250 ° C. or higher, the heat resistance is slightly improved as compared with the comparative example. In addition, in the artificial lattice film with 1% atom added (marked with Δ), the resistivity value of the film is slightly increased, so the resistance change rate before heat treatment is also reduced, but the heat resistance is improved and the resistance change rate decreases. The degree is small. 10 atom%
With the added artificial lattice film (marked with □), the heat resistance is further improved, but the specific resistance value of the film is large and the rate of change in resistance before heat treatment is slightly small.
【００３０】なお、磁性層であるＮｉＦｅ層にＲｅ，Ｃ
ｒを加えた人工格子膜を作製し、熱処理温度に対する抵
抗変化率を測定したところ、耐熱性は向上していた。ま
た、Ｃｒ添加Ｃｕ層を用いて人工格子膜を作製し、同じ
く熱処理温度に対する抵抗変化率を測定したところ、Ｃ
ｒ添加により若干抵抗変化率が減少するが、耐熱性はや
はり向上することが確かめられた。The NiFe layer, which is the magnetic layer, contains Re, C
When an artificial lattice film containing r was prepared and the rate of change in resistance with respect to the heat treatment temperature was measured, the heat resistance was improved. An artificial lattice film was prepared using a Cr-added Cu layer, and the resistance change rate with respect to the heat treatment temperature was measured.
It was confirmed that the resistance change rate was slightly improved by adding r, but the heat resistance was also improved.
【００３１】[0031]
【発明の効果】本発明は、以上詳記したとおり、２層以
上の磁性層とCu系非磁性層が積層された人工格子磁気抵
抗効果素子において、Ｃｕ系非磁性層又は磁性層にＲ
ｅ，Ｃｒを特定量(0.01〜10原子％)添加することを特徴
とし、これにより、特に熱処理による抵抗変化率の劣化
を防止することができる効果が生じる。そして、本発明
によれば、耐熱性の高い磁気抵抗効果素子、磁気抵抗効
果ヘッドを提供することができるものである。As described above in detail, the present invention is an artificial lattice magnetoresistive element in which two or more magnetic layers and a Cu-based non-magnetic layer are laminated, and the Cu-based non-magnetic layer or the magnetic layer has R
It is characterized in that a specific amount (0.01 to 10 atomic%) of e and Cr is added, which brings about the effect of preventing deterioration of the resistance change rate due to heat treatment in particular. Further, according to the present invention, it is possible to provide a magnetoresistive effect element and a magnetoresistive effect head having high heat resistance.
【図１】本発明に係る磁気抵抗効果素子の１例を示す斜
視図。FIG. 1 is a perspective view showing an example of a magnetoresistive effect element according to the present invention.
【図２】純Ｃｕ層及びＲｅ添加Ｃｕ層を使用した人工格
子膜の熱処理温度と抵抗変化率の関係を示すグラフ。FIG. 2 is a graph showing a relationship between a heat treatment temperature and a resistance change rate of an artificial lattice film using a pure Cu layer and a Re-added Cu layer.
１ 人工格子膜 ２ 非磁性層 ３ 磁性層 ４ 電極 1 Artificial lattice film 2 Non-magnetic layer 3 Magnetic layer 4 Electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 石原 邦彦 東京都港区芝五丁目７番１号日本電気株式 会社内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Kunihiko Ishihara 5-7-1, Shiba, Minato-ku, Tokyo NEC Corporation
Claims (8)
合金からなる非磁性層を介して磁性層が積層された構造
の人工格子磁気抵抗効果素子において、前記Ｃｕ層，Ｃ
ｕ合金層にＲｅを0.01〜10原子％添加したことを特徴と
する磁気抵抗効果素子。1. Cu containing Cu and Cu as a main component on a substrate
In the artificial lattice magnetoresistive effect element having a structure in which magnetic layers are laminated via a non-magnetic layer made of an alloy, the Cu layer, C
A magnetoresistive effect element characterized by adding 0.01 to 10 atomic% of Re to a u alloy layer.
合金からなる非磁性層を介して磁性層が積層された構造
の人工格子磁気抵抗効果素子において、前記Ｃｕ層，Ｃ
ｕ合金層にＣｒを0.01〜10原子％添加したことを特徴と
する磁気抵抗効果素子。2. Cu containing Cu and Cu as a main component on a substrate
In the artificial lattice magnetoresistive effect element having a structure in which magnetic layers are laminated via a non-magnetic layer made of an alloy, the Cu layer, C
A magnetoresistive effect element characterized in that 0.01 to 10 atomic% of Cr is added to a u alloy layer.
子において、磁性層がＮｉ，ＮｉＦｅ，ＮｉＣｏ，Ｎｉ
ＦｅＣｏ又はこれらを主成分とする合金からなることを
特徴とする磁気抵抗効果素子。3. The magnetoresistive effect element according to claim 1, wherein the magnetic layer is Ni, NiFe, NiCo, Ni.
A magnetoresistive effect element comprising FeCo or an alloy containing these as the main components.
ｉＦｅＣｏ又はこれらを主成分とする磁性層と、Ｃｕ，
Ｃｕを主成分とするＣｕ合金からなる非磁性層が積層さ
れた構造の人工格子磁気抵抗効果素子において、前記磁
性層にＲｅを0.01〜10原子％添加したことを特徴とする
磁気抵抗効果素子。4. Ni, NiFe, NiCo, N on a substrate
iFeCo or a magnetic layer containing these as main components, Cu,
An artificial-lattice magnetoresistive element having a structure in which non-magnetic layers made of a Cu alloy containing Cu as a main component are laminated, wherein 0.01 to 10 atomic% of Re is added to the magnetic layer.
ｉＦｅＣｏ又はこれらを主成分とする磁性層と、Ｃｕ，
Ｃｕを主成分とするＣｕ合金からなる非磁性層が積層さ
れた構造の人工格子磁気抵抗効果素子において、前記磁
性層にＣｒを0.01〜10原子％添加したことを特徴とする
磁気抵抗効果素子。5. Ni, NiFe, NiCo, N on a substrate
iFeCo or a magnetic layer containing these as main components, Cu,
An artificial lattice magnetoresistive effect element having a structure in which non-magnetic layers made of Cu alloy containing Cu as a main component are laminated, wherein 0.01 to 10 atom% of Cr is added to the magnetic layer.
気抵抗効果素子において、非磁性層を介して隣り合った
磁性薄膜層が互いに反強磁性的結合した人工磁気抵抗効
果膜を使用したことを特徴とする磁気抵抗効果素子。6. The artificial magnetoresistive effect film according to claim 1, 2, 3, 4 or 5, wherein magnetic thin film layers adjacent to each other with a nonmagnetic layer antiferromagnetically coupled to each other. A magnetoresistive effect element characterized by using.
気抵抗効果素子において、一方の磁性薄膜層が反強磁性
層と隣接して積層された人工格子磁気抵抗効果膜を使用
したことを特徴とする磁気抵抗効果素子。7. The magnetoresistive effect element according to claim 1, 2, 3, 4 or 5, wherein an artificial lattice magnetoresistive effect film in which one magnetic thin film layer is laminated adjacent to an antiferromagnetic layer is used. A magnetoresistive effect element characterized by the above.
気抵抗効果素子において、２種類以上の保磁力の異なっ
た磁性体を含む人工格子磁気抵抗効果膜を使用したこと
を特徴とする磁気抵抗効果素子。8. The magnetoresistive effect element according to claim 1, 2, 3, 4 or 5, wherein an artificial lattice magnetoresistive effect film containing two or more kinds of magnetic substances having different coercive forces is used. And a magnetoresistive effect element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7276519A JP2737721B2 (en) | 1995-09-30 | 1995-09-30 | Magnetoresistance effect element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7276519A JP2737721B2 (en) | 1995-09-30 | 1995-09-30 | Magnetoresistance effect element |
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| JP2737721B2 JP2737721B2 (en) | 1998-04-08 |
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ID=17570609
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06325934A (en) * | 1992-10-30 | 1994-11-25 | Toshiba Corp | Magnetoresistance effect element |
| JPH0849063A (en) * | 1994-05-30 | 1996-02-20 | Sony Corp | Magnetoresistive film |
-
1995
- 1995-09-30 JP JP7276519A patent/JP2737721B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06325934A (en) * | 1992-10-30 | 1994-11-25 | Toshiba Corp | Magnetoresistance effect element |
| JPH0849063A (en) * | 1994-05-30 | 1996-02-20 | Sony Corp | Magnetoresistive film |
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| Publication number | Publication date |
|---|---|
| JP2737721B2 (en) | 1998-04-08 |
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