JPH10135148A5 - - Google Patents
Info
- Publication number
- JPH10135148A5 JPH10135148A5 JP1996305957A JP30595796A JPH10135148A5 JP H10135148 A5 JPH10135148 A5 JP H10135148A5 JP 1996305957 A JP1996305957 A JP 1996305957A JP 30595796 A JP30595796 A JP 30595796A JP H10135148 A5 JPH10135148 A5 JP H10135148A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- irradiation system
- film
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30595796A JP3763908B2 (ja) | 1996-10-30 | 1996-10-30 | レーザー照射システム |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30595796A JP3763908B2 (ja) | 1996-10-30 | 1996-10-30 | レーザー照射システム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10135148A JPH10135148A (ja) | 1998-05-22 |
| JPH10135148A5 true JPH10135148A5 (de) | 2004-10-21 |
| JP3763908B2 JP3763908B2 (ja) | 2006-04-05 |
Family
ID=17951337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30595796A Expired - Lifetime JP3763908B2 (ja) | 1996-10-30 | 1996-10-30 | レーザー照射システム |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3763908B2 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000260995A (ja) * | 1999-03-10 | 2000-09-22 | Matsushita Electric Ind Co Ltd | 薄膜半導体装置の製造方法 |
| US7402467B1 (en) | 1999-03-26 | 2008-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| JP4588167B2 (ja) * | 2000-05-12 | 2010-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2002025739A1 (en) * | 2000-09-21 | 2002-03-28 | Matsushita Electric Industrial Co.,Ltd. | Thin-film transistor, and liquid crystal display and electroluminescence display which comprise it |
-
1996
- 1996-10-30 JP JP30595796A patent/JP3763908B2/ja not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100386202B1 (ko) | 반도체 장치 제조 방법 | |
| US6784033B1 (en) | Method for the manufacture of an insulated gate field effect semiconductor device | |
| JP3586558B2 (ja) | 薄膜の改質方法及びその実施に使用する装置 | |
| US7691692B2 (en) | Substrate processing apparatus and a manufacturing method of a thin film semiconductor device | |
| JP2623276B2 (ja) | 薄膜半導体装置の製造方法 | |
| KR100407392B1 (ko) | 반도체장치제작방법 | |
| US20020160622A1 (en) | Methods of heat treatment and heat treatment apparatus for silicon oxide films | |
| JPS6392012A (ja) | 積層物品およびその製造方法 | |
| CA1297764C (en) | Fabrication of devices having thin dielectric layers | |
| CN1341956A (zh) | 场效应晶体管的制造方法 | |
| JP3927634B2 (ja) | レーザーアニール方法及び薄膜トランジスタの作製方法 | |
| TW200939357A (en) | Manufacturing method of thin film transistor and thin film transistor | |
| JP2502789B2 (ja) | 薄膜トランジスタの製造方法 | |
| JPH10135148A5 (de) | ||
| JPS6235571A (ja) | 半導体装置の製造方法 | |
| JP2840802B2 (ja) | 半導体材料の製造方法および製造装置 | |
| JP3458216B2 (ja) | 多結晶半導体膜の製造方法 | |
| JP3203706B2 (ja) | 半導体層のアニール処理方法および薄膜トランジスタの製造方法 | |
| JP3763908B2 (ja) | レーザー照射システム | |
| JP3897836B2 (ja) | 半導体装置の作製方法 | |
| JP3390830B2 (ja) | 多結晶半導体膜の製造装置 | |
| JP2001332492A (ja) | 炭化ケイ素薄膜構造体およびその製造方法ならびに薄膜トランジスタ | |
| JP3612009B2 (ja) | 半導体装置の作製方法 | |
| JP2939819B2 (ja) | 薄膜トランジスタの製造方法 | |
| JP3567937B2 (ja) | 薄膜トランジスタの作製方法 |