JPH10135183A - Plasma processing equipment - Google Patents
Plasma processing equipmentInfo
- Publication number
- JPH10135183A JPH10135183A JP8284495A JP28449596A JPH10135183A JP H10135183 A JPH10135183 A JP H10135183A JP 8284495 A JP8284495 A JP 8284495A JP 28449596 A JP28449596 A JP 28449596A JP H10135183 A JPH10135183 A JP H10135183A
- Authority
- JP
- Japan
- Prior art keywords
- plasma processing
- electrode cover
- processing apparatus
- cover
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
(57)【要約】
【課題】プラズマ処理室の反応生成物の付着を低減し、
試料の量産に適したプラズマ処理装置を提供すること。
【解決手段】プラズマ処理室内の上部電極１及び下部電
極２の周囲に配置した第１の上部電極カバー８と第１の
下部電極カバー９の少なくとも表面の一部に、熱容量５
０φＪ／Ｋ（ただしφは該部品の外径をインチで表わし
た値である）以下の材質からなり、これらの電極カバー
と分離した部品(第２の上部電極カバー１０と第２の下
部電極カバー１１)を設け、プラズマ熱による自然加熱
で反応生成物の付着を低減したプラズマ処理装置。
(57) [Summary] [PROBLEMS] To reduce the adhesion of reaction products in a plasma processing chamber,
To provide a plasma processing apparatus suitable for mass production of samples. A heat capacity is provided on at least a part of a surface of a first upper electrode cover and a first lower electrode cover disposed around an upper electrode and a lower electrode in a plasma processing chamber.
0φJ / K (where φ is a value representing the outer diameter of the part in inches) or less, and parts separated from these electrode covers (the second upper electrode cover 10 and the second lower electrode cover). (11) A plasma processing apparatus provided with natural heating by plasma heat to reduce adhesion of reaction products.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プラズマ処理装置
に係り、特に半導体装置の製造に際して酸化膜のエッチ
ングに適したプラズマ処理装置に関する。The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus suitable for etching an oxide film in manufacturing a semiconductor device.
【０００２】[0002]
【従来の技術】ドライエッチング装置、プラズマＣＶＤ
装置等のプラズマ処理装置で試料を処理するときに、ウ
ェハを載置するステージ周辺の部品表面に反応生成物が
付着し、やがて剥離し、剥離した塵埃がいわゆる異物と
してウェハ表面に付着し、プラズマ処理の歩留まりを低
下させる。特に、酸化膜エッチングに適した電極間隔が
１０ｍｍ程度又はそれ以下の狭電極式プラズマエッチン
グ処理装置ではこの問題が著しい。この付着物を除去す
るために、プラズマ処理装置を定期的に清掃をする必要
があり、設備の稼動率を低下させていた。2. Description of the Related Art Dry etching equipment, plasma CVD
When a sample is processed by a plasma processing apparatus such as an apparatus, a reaction product adheres to a surface of a component around a stage on which a wafer is mounted, and then peels off. Decrease processing yield. In particular, this problem is remarkable in a narrow electrode type plasma etching apparatus in which an electrode interval suitable for oxide film etching is about 10 mm or less. In order to remove the deposits, it is necessary to periodically clean the plasma processing apparatus, which reduces the operation rate of the equipment.
【０００３】特開昭６３−２５４７３１号公報に記載の
発明は、この問題を解決するために、プラズマ処理室の
内壁面をプラズマ雰囲気から隔離するカバー体を設け、
このカバー体の内部に発熱体を埋設したものである。こ
の発熱体により、内壁面表面を所定の温度に加熱し、反
応生成物の付着を低減することができる。In order to solve this problem, the invention described in JP-A-63-254731 is provided with a cover for isolating the inner wall surface of the plasma processing chamber from the plasma atmosphere.
A heating element is embedded inside the cover body. With this heating element, the inner wall surface can be heated to a predetermined temperature to reduce the adhesion of reaction products.
【０００４】また、特開平１−１０７５４２号公報に記
載の発明は、プラズマ処理室の内壁面をプラズマ雰囲気
から隔離するカバー体を設け、カバー体母材の表面に電
気抵抗膜を設け、その外面を絶縁膜で覆い、さらにその
表面に赤外線反射膜を設けたものである。電気抵抗膜に
よりカバー体を直接加熱すると共に、赤外線反射膜によ
ってカバー体の加熱効果を向上させ、反応生成物の付着
を低減することができる。In the invention described in Japanese Patent Application Laid-Open No. 1-107542, a cover for isolating an inner wall surface of a plasma processing chamber from a plasma atmosphere is provided, an electric resistance film is provided on a surface of a cover base material, and an outer surface thereof is provided. Is covered with an insulating film, and an infrared reflecting film is further provided on the surface thereof. The cover body is directly heated by the electric resistance film, and the heating effect of the cover body is improved by the infrared reflection film, so that the adhesion of the reaction product can be reduced.
【０００５】[0005]
【発明が解決しようとする課題】上記各公報記載の従来
技術は、いずれも設備構造が複雑になり、設備価格が高
くなるという問題があった。さらに、部品表面の温度モ
ニタ、制御を完全に行なうことは困難であるという問題
があった。本発明の目的は、プラズマ処理室の反応生成
物の付着を低減し、試料の量産に適したプラズマ処理装
置を提供することにある。The prior art described in each of the above publications has a problem that the equipment structure is complicated and the equipment price is high. Further, there is a problem that it is difficult to completely monitor and control the temperature of the component surface. An object of the present invention is to provide a plasma processing apparatus suitable for mass production of samples by reducing adhesion of reaction products in a plasma processing chamber.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に、本発明のプラズマ処理装置は、電極カバーの表面の
少なくとも一部に電極カバーと分離した部品を配置し、
該部品を熱容量が５０φＪ／Ｋ以下（ただしφは該部品
の外径をインチで表わした値である）の材質としたもの
である。In order to achieve the above object, a plasma processing apparatus according to the present invention includes a part separated from the electrode cover on at least a part of the surface of the electrode cover.
The component is made of a material having a heat capacity of 50 φJ / K or less (where φ is a value representing the outer diameter of the component in inches).
【０００７】この部品の材質の熱容量は、かなり低くて
もよいが、材質の強度等の他の条件が適切なものの熱容
量は２２φＪ／Ｋ以上のものであり、そのため２２φＪ
／Ｋ以上とすることが好ましい。このプラズマ処理装置
は、部品表面の加熱方法をヒータ等の加熱方法ではな
く、プラズマ熱による自然加熱方法としたものである。
この部品は、少なくとも電極カバーの電極と接する部分
の表面に配置されていることが好ましい。また、電極カ
バーの表面全面に配置されていない方がよい。部品の体
積が小さい方がその温度上昇が顕著となるからである。The heat capacity of the material of this part may be quite low, but the heat capacity is 22φJ / K or more, although other conditions such as the strength of the material are appropriate.
/ K or more. In this plasma processing apparatus, the component surface is heated not by a heater or the like but by a natural heating method using plasma heat.
This component is preferably disposed on at least the surface of the electrode cover in contact with the electrode. Further, it is better not to be arranged on the entire surface of the electrode cover. This is because the smaller the volume of the part, the more remarkable the temperature rise.
【０００８】また、上記部品が上記電極カバーと接する
面は、表面粗さが粗い面であることが好ましい。部品の
温度上昇が顕著となるからである。表面粗さは、Ｒｍａ
ｘが１０から５０Ｓの範囲の粗さであることが好まし
い。Further, it is preferable that the surface of the component in contact with the electrode cover has a rough surface. This is because the temperature rise of the parts becomes remarkable. The surface roughness is Rma
Preferably, x has a roughness in the range of 10 to 50S.
【０００９】[0009]
【発明の実施の形態】以下、本発明のプラズマ処理装置
の一実施例を図面に基づいて説明する。図１は本実施例
であるプラズマ処理装置の構成を示す模式図である。ま
た、図２はその処理室の部分構成図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the plasma processing apparatus according to the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram illustrating a configuration of a plasma processing apparatus according to the present embodiment. FIG. 2 is a partial configuration diagram of the processing chamber.
【００１０】図１に示すように、本実施例のプラズマ処
理装置は、高周波電力を上部電極１と下部電極２に印加
する高周波電源３、４を有し、処理ガスはいくつかのガ
スバッファ室を介して、電極に空けられた多数のガス孔
（図示せず）から供給される。供給されたガスは上下電
極に印加される高周波電力を吸収し、プラズマ化し、ウ
ェハ５の表面層と反応し、エッチングは進行する。処理
ガスは処理室６に接続された真空排気ポンプ７により排
気される構成となっている。As shown in FIG. 1, the plasma processing apparatus of this embodiment has high-frequency power supplies 3 and 4 for applying high-frequency power to an upper electrode 1 and a lower electrode 2, and a processing gas is supplied to several gas buffer chambers. Through a number of gas holes (not shown) opened in the electrode. The supplied gas absorbs the high-frequency power applied to the upper and lower electrodes, turns into plasma, reacts with the surface layer of the wafer 5, and the etching proceeds. The processing gas is exhausted by a vacuum exhaust pump 7 connected to the processing chamber 6.
【００１１】次に図２により処理室の構成を説明する。
電極カバーは、第１の上部電極カバー８と第１の下部電
極カバー９であり、その部品に相当するものは、第２の
上部電極カバー１０と第２の下部電極カバー１１であ
る。これらの電極カバーはいずれもリング状になってい
る。第２の上部電極カバー１０と第２の下部電極カバー
１１をそれぞれ熱容量５０φＪ／Ｋ以下の摺りガラスと
し、かつ、第１の上部、下部電極カバーとの接触部の表
面荒さＲｍａｘを２０Ｓ程度に粗くし、部品温度を上昇
しやすくした。なお、図で１ａは上部電極板である。本
実施例では、部品とその部品が接触した第１の上部、下
部電極カバーとの温度差ΔＴは、ウェハ１枚当たり６０
ｓ放電で２５枚繰り返したときに、熱伝達しにくいため
５０〜６０℃であった。Next, the configuration of the processing chamber will be described with reference to FIG.
The electrode covers are a first upper electrode cover 8 and a first lower electrode cover 9, and the corresponding parts are a second upper electrode cover 10 and a second lower electrode cover 11. Each of these electrode covers has a ring shape. The second upper electrode cover 10 and the second lower electrode cover 11 are made of frosted glass having a heat capacity of 50 φJ / K or less, respectively, and the surface roughness Rmax of a contact portion between the first upper and lower electrode covers is reduced to about 20S. And the temperature of parts was easily increased. In the drawing, reference numeral 1a denotes an upper electrode plate. In this embodiment, the temperature difference ΔT between the component and the first upper and lower electrode covers in contact with the component is 60 ° per wafer.
When 25 sheets were repeated by s discharge, the temperature was 50 to 60 ° C. because heat transfer was difficult.
【００１２】なお、摺りガラス以外にも、直径が６イン
チの石英（２３．３φＪ／Ｋ）、直径が６インチのポリ
ベンゾイミダゾール（２２．９φＪ／Ｋ）、直径が５イ
ンチのＡｌ2Ｏ3（４８．０φＪ／Ｋ）等を用いても略同
様の効果が得られた。In addition to ground glass, quartz having a diameter of 6 inches (23.3 φJ / K), polybenzimidazole having a diameter of 6 inches (22.9 φJ / K), and Al 2 O 3 having a diameter of 5 inches (48.0 φJ / K) and the like, substantially the same effect was obtained.
【００１３】従来の第１の上部電極カバー８と第２の上
部電極カバー１０が一体になり、第１の下部電極カバー
９と第２の下部電極カバー１１が一体となった電極カバ
ーで、熱容量が各々１０００Ｊ／Ｋと大きかったもの
は、温度差ΔＴが１０℃以下だった。A conventional first upper electrode cover 8 and a second upper electrode cover 10 are integrated, and a first lower electrode cover 9 and a second lower electrode cover 11 are integrated. Were as large as 1000 J / K, the temperature difference ΔT was 10 ° C. or less.
【００１４】さらに本実施例では、上記の従来構造の電
極カバーに比べ、反応生成物の付着速度が２０〜４０％
低減し、クリーニングサイクルも４割程度の改善が可能
になった。また、交換すべき部品単品（第２の上部電極
カバーと第２の下部電極カバー）のコストも従来の一体
型電極カバーの１／５程度にでき、ランニングコスト低
減が可能になった。Further, in this embodiment, the deposition rate of the reaction product is 20 to 40% as compared with the above-mentioned conventional electrode cover.
The cleaning cycle can be improved by about 40%. Also, the cost of the parts to be replaced (the second upper electrode cover and the second lower electrode cover) can be reduced to about 1/5 that of the conventional integrated electrode cover, and the running cost can be reduced.
【００１５】なお、第２の上部電極カバー１０と第２の
下部電極カバー１１は、それぞれ第１の上部電極カバー
８と第１の下部電極カバー９の表面にあればよく、ま
た、表面の少なくとも電極側にあればよい。各電極カバ
ーの向き合っている面（図で第１の上部電極カバー８の
下面と第１の下部電極カバー９の上面、それぞれ図の左
側の面は含まない）の２０％以上、８０％以下が上記の
熱容量１５０Ｊ／Ｋ以下の材質の第２の上部電極カバー
１０と第２の下部電極カバー１１であればよい。この部
分があまり小さいと反応生成物がこの部分の上を越えて
形成されるからである。また、あまり大きいとこの部分
の温度上昇が大きくならないからである。The second upper electrode cover 10 and the second lower electrode cover 11 need only be provided on the surfaces of the first upper electrode cover 8 and the first lower electrode cover 9, respectively. It only has to be on the electrode side. 20% or more and 80% or less of the facing surface of each electrode cover (the lower surface of the first upper electrode cover 8 and the upper surface of the first lower electrode cover 9 in the figure, excluding the left side surface in the figure). The second upper electrode cover 10 and the second lower electrode cover 11 having a heat capacity of 150 J / K or less may be used. This is because if this part is too small, reaction products will form over this part. On the other hand, if it is too large, the temperature rise in this part does not become large.
【００１６】また、第２の上部電極カバー１０と第２の
下部電極カバー１１の厚みは、その大部分が第１の上
部、下部電極カバーを合わせた厚みの１／２から１／３
程度であることが好ましい。具体的には３〜１０ｍｍ位
であることが好ましい。図２の第２の上部電極カバー１
０の右端のように、一部がもっと厚くても差し支えな
い。厚みが薄い方が温度上昇が大きくなりやすいが、あ
まり薄いと強度が不足するからである。Most of the thickness of the second upper electrode cover 10 and the second lower electrode cover 11 is か ら to ３ of the total thickness of the first upper and lower electrode covers.
It is preferred that it is about. Specifically, it is preferably about 3 to 10 mm. Second upper electrode cover 1 of FIG.
Some may be thicker, like the right end of 0. This is because the thinner the thickness, the higher the temperature rise is likely to be.
【００１７】[0017]
【発明の効果】以上述べたように、本発明は、簡単なま
た安価な設備構造で、反応生成物の付着を低減し、プラ
ズマ処理室の清掃頻度を低減し、設備稼動率の向上が図
れた。As described above, according to the present invention, with a simple and inexpensive equipment structure, the adhesion of reaction products can be reduced, the frequency of cleaning the plasma processing chamber can be reduced, and the equipment operation rate can be improved. Was.
【図１】本発明の一実施例であるプラズマ処理装置の概
略構成図である。FIG. 1 is a schematic configuration diagram of a plasma processing apparatus according to one embodiment of the present invention.
【図２】本発明の一実施例であるプラズマ処理装置の部
分拡大構成図である。FIG. 2 is a partially enlarged configuration diagram of a plasma processing apparatus according to an embodiment of the present invention.
１…上部電極 １ａ…上部電極板 ２…下部電極 ３、４…高周波電源 ５…ウェハ ６…処理室 ７…真空排気ポンプ ８…第１の上部電極カバー ９…第１の下部電極カバー １０…第２の上部電極カバー １１…第２の下部電極カバー DESCRIPTION OF SYMBOLS 1 ... Upper electrode 1a ... Upper electrode plate 2 ... Lower electrode 3, 4 ... High frequency power supply 5 ... Wafer 6 ... Processing chamber 7 ... Vacuum pump 8 ... 1st upper electrode cover 9 ... 1st lower electrode cover 10 ... 1st 2 upper electrode cover 11 ... second lower electrode cover
Claims (4)
極カバーと分離した部品が配置され、該部品は、熱容量
５０φＪ／Ｋ（ただしφは該部品の外径をインチで表わ
した値である）以下の材質からなることを特徴とするプ
ラズマ処理装置。A component separated from the electrode cover is disposed on at least a part of the surface of the electrode cover, and the component has a heat capacity of 50 φJ / K (where φ is a value representing the outer diameter of the component in inches). A) a plasma processing apparatus comprising:
電極と接する部分の表面に配置されたことを特徴とする
請求項１記載のプラズマ処理装置。2. The plasma processing apparatus according to claim 1, wherein said component is disposed at least on a surface of a portion of said electrode cover which is in contact with an electrode.
表面粗さが粗い面であることを特徴とする請求項１又は
２記載のプラズマ処理装置。3. A surface where the component contacts the electrode cover,
3. The plasma processing apparatus according to claim 1, wherein the surface has a rough surface.
Ｓの範囲の粗さであることを特徴とする請求項３記載の
プラズマ処理装置。4. The surface roughness is preferably such that Rmax is 10 to 50.
4. The plasma processing apparatus according to claim 3, wherein the roughness is in a range of S.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8284495A JPH10135183A (en) | 1996-10-28 | 1996-10-28 | Plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8284495A JPH10135183A (en) | 1996-10-28 | 1996-10-28 | Plasma processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10135183A true JPH10135183A (en) | 1998-05-22 |
Family
ID=17679266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8284495A Pending JPH10135183A (en) | 1996-10-28 | 1996-10-28 | Plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10135183A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015026686A (en) * | 2013-07-25 | 2015-02-05 | パナソニック株式会社 | Plasma processing apparatus and plasma processing method |
-
1996
- 1996-10-28 JP JP8284495A patent/JPH10135183A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015026686A (en) * | 2013-07-25 | 2015-02-05 | パナソニック株式会社 | Plasma processing apparatus and plasma processing method |
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