JPH10135470A5 - - Google Patents
Info
- Publication number
- JPH10135470A5 JPH10135470A5 JP1996305958A JP30595896A JPH10135470A5 JP H10135470 A5 JPH10135470 A5 JP H10135470A5 JP 1996305958 A JP1996305958 A JP 1996305958A JP 30595896 A JP30595896 A JP 30595896A JP H10135470 A5 JPH10135470 A5 JP H10135470A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- channel thin
- film transistor
- source
- drain regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30595896A JP3841897B2 (ja) | 1996-10-30 | 1996-10-30 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30595896A JP3841897B2 (ja) | 1996-10-30 | 1996-10-30 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10135470A JPH10135470A (ja) | 1998-05-22 |
| JPH10135470A5 true JPH10135470A5 (2) | 2004-10-21 |
| JP3841897B2 JP3841897B2 (ja) | 2006-11-08 |
Family
ID=17951351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30595896A Expired - Fee Related JP3841897B2 (ja) | 1996-10-30 | 1996-10-30 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3841897B2 (2) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001051661A (ja) | 1999-08-16 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | Ｄ／ａ変換回路および半導体装置 |
| US7829394B2 (en) | 2005-05-26 | 2010-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
-
1996
- 1996-10-30 JP JP30595896A patent/JP3841897B2/ja not_active Expired - Fee Related
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