JPH10162954A - Manufacturing method of organic EL element - Google Patents

Manufacturing method of organic EL element

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Publication number
JPH10162954A
JPH10162954A JP8334851A JP33485196A JPH10162954A JP H10162954 A JPH10162954 A JP H10162954A JP 8334851 A JP8334851 A JP 8334851A JP 33485196 A JP33485196 A JP 33485196A JP H10162954 A JPH10162954 A JP H10162954A
Authority
JP
Japan
Prior art keywords
substrate
light emitting
transparent electrode
organic
emitting layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8334851A
Other languages
Japanese (ja)
Inventor
Tetsuya Tanpo
哲也 丹保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hokuriku Electric Industry Co Ltd
Original Assignee
Hokuriku Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hokuriku Electric Industry Co Ltd filed Critical Hokuriku Electric Industry Co Ltd
Priority to JP8334851A priority Critical patent/JPH10162954A/en
Publication of JPH10162954A publication Critical patent/JPH10162954A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】 【課題】 簡単な構成で透明電極と背面電極の間での短
絡がなく、歩留の良い有機EL素子の製造方法を提供す
る。 【解決手段】 ガラスや石英、樹脂等の透明な基板10
の表面にITO等の透明な電極材料により、エッチング
又はマスク蒸着により所定形状の透明電極12を形成す
る。この透明電極12の表面にホール輸送材料14及び
電子輸送材料16その他発光材料による有機EL材料か
らなる発光層15を積層する際に、透明電極12が形成
された基板10に対する発光層15の蒸着方向を、各層
毎に各々透明電極12に対する入射が互いに反対方向に
設定して蒸着を行ない、この後、背面電極18を蒸着す
る。
(57) [Problem] To provide a method of manufacturing an organic EL device with a simple structure, with no short circuit between a transparent electrode and a back electrode and with a good yield. A transparent substrate made of glass, quartz, resin, or the like is provided.
A transparent electrode 12 having a predetermined shape is formed on the surface of the substrate by etching or mask evaporation using a transparent electrode material such as ITO. When the light emitting layer 15 made of an organic EL material made of a hole transporting material 14, an electron transporting material 16 and other light emitting materials is laminated on the surface of the transparent electrode 12, the direction of vapor deposition of the light emitting layer 15 on the substrate 10 on which the transparent electrode 12 is formed. Is deposited in such a manner that the incidence on the transparent electrode 12 is set to be opposite to each other for each layer, and thereafter, the back electrode 18 is deposited.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、平面光源やディ
スプレイ、その他所定のパターンの発光表示に用いられ
る有機EL素子の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a flat light source, a display, and an organic EL device used for light emission display of a predetermined pattern.

【0002】[0002]

【従来の技術】従来、例えばドットマトリクス発光させ
る有機EL(エレクトロルミネッセンス)素子は、図3
に示すように、ガラス基板10に透光性のITO膜を一
面に形成し、このITO膜をストライプ状にエッチング
して透明電極12を形成し、その表面にトリフェニルア
ミン誘導体(TPD)等のホール輸送材料14を設け、
その上に発光材料であるアルミキレート錯体(Al
3)等の電子輸送材料16を積層している。そしてそ
の表面に、Al,Li,Ag,Mg,In等の背面電極
18を、上記透明電極12のパターンと直交する方向に
ストライプ状に蒸着等で付着して形成している。この有
機有機EL素子は、透明電極12と背面電極18の交点
に所定の電流を流し、発光させるものである。そして、
この有機EL素子の製造は、エッチングによりストライ
プ状に透明電極12が形成されたガラス基板10上に、
順次上記電極材料及びEL材料を真空蒸着により形成す
るものである。
2. Description of the Related Art Conventionally, for example, an organic EL (electroluminescence) element for emitting dot matrix light is shown in FIG.
As shown in FIG. 1, a light-transmitting ITO film is formed on one surface of a glass substrate 10, this ITO film is etched in a stripe shape to form a transparent electrode 12, and a triphenylamine derivative (TPD) or the like is formed on the surface. A hole transport material 14 is provided,
On top of that, an aluminum chelate complex (Al
q 3 ) and the like. On the surface thereof, a back electrode 18 of Al, Li, Ag, Mg, In or the like is formed by being attached in a stripe shape in a direction orthogonal to the pattern of the transparent electrode 12 by vapor deposition or the like. In this organic organic EL element, a predetermined current is applied to the intersection of the transparent electrode 12 and the back electrode 18 to emit light. And
This organic EL device is manufactured by etching a glass substrate 10 on which a transparent electrode 12 is formed in a stripe shape by etching.
The electrode material and the EL material are sequentially formed by vacuum evaporation.

【0003】[0003]

【発明が解決しようとする課題】ここで、有機EL素子
は電流が流れる素子であり、導体経路による損失を少な
くする必要があり、さらに導体経路長の差による抵抗値
の差から、発光量が異なってしまうのをできるだけ防止
しなければならない。従って、導体経路の抵抗値をでき
るだけ抑えるために、ITO膜の厚さは、1μm程度で
あった。一方、発光層の材料は、半導体特性のため厚い
と電流が流れず、上記TPD、Alq3ともに500Å
程度の薄い層に形成されている。
Here, the organic EL element is an element through which a current flows, and it is necessary to reduce the loss due to the conductor path. It must be prevented as much as possible from being different. Therefore, in order to suppress the resistance value of the conductor path as much as possible, the thickness of the ITO film was about 1 μm. On the other hand, if the material of the light emitting layer is thick because of semiconductor characteristics, no current flows, and both TPD and Alq 3 are 500Å
It is formed in a thin layer.

【0004】従って、この透明電極12と発光層の厚さ
の差がきわめて大きいために、透明電極12の角部や側
面部に、EL材料の薄い部分や存在しない部分が生じ
る。そして、背面電極18の蒸着源は、EL材料の蒸着
源とは異なる位置にあり、背面電極の蒸着厚さは100
0Å以上と比較的厚いので、蒸着材料の薄いまたは設け
られていない透明電極12の一部に付着し、背面電極1
8がELと透明電極12との間に短絡が生じる場合があ
った。
[0004] Therefore, since the difference between the thickness of the transparent electrode 12 and the thickness of the light emitting layer is extremely large, a thin portion or a non-existent portion of the EL material is generated at the corners and side portions of the transparent electrode 12. The deposition source of the back electrode 18 is located at a position different from the deposition source of the EL material, and the deposition thickness of the back electrode is 100
Since it is relatively thick at 0 [deg.] Or more, it adheres to a part of the transparent electrode 12 where the vapor deposition material is thin or not provided, and the back electrode 1
In the case of No. 8, a short circuit may occur between the EL and the transparent electrode 12.

【0005】この発明は、上記従来の技術に鑑みてなさ
れたもので、簡単な構成で透明電極と背面電極の間での
短絡がなく、歩留の良い有機EL素子の製造方法を提供
することを目的とする。
The present invention has been made in view of the above-mentioned conventional technology, and provides a method of manufacturing an organic EL device having a simple structure, which has no short circuit between a transparent electrode and a back electrode and has a good yield. With the goal.

【0006】[0006]

【課題を解決するための手段】この発明は、ガラスや石
英、樹脂等の透明な基板表面にITO等の透明な電極材
料により、エッチング又はマスク蒸着により所定形状の
透明電極を形成し、この透明電極の表面にホール輸送材
料及び電子輸送材料その他発光材料による有機EL材料
からなる発光層を積層する際に、上記透明電極が形成さ
れた基板に対する発光層の蒸着方向を、各層毎に各々上
記透明電極に対する入射が互いに反対方向になるように
蒸着を行ない、この後、背面電極を蒸着する有機EL素
子の製造方法である。この各発光層を基板に蒸着する際
の蒸着方向は、各材料を上記基板に立てた垂線に対して
互いにほぼ対称な角度で入射させるものである。
According to the present invention, a transparent electrode of a predetermined shape is formed on a transparent substrate surface such as glass, quartz or resin by etching or mask vapor deposition using a transparent electrode material such as ITO. When a light emitting layer made of an organic EL material made of a hole transporting material, an electron transporting material, or another light emitting material is laminated on the surface of the electrode, the direction of vapor deposition of the light emitting layer on the substrate on which the transparent electrode is formed is changed by the transparent This is a method for manufacturing an organic EL element in which vapor deposition is performed so that incident light on the electrodes is in opposite directions, and then a back electrode is vapor deposited. The direction of vapor deposition when each light emitting layer is vapor-deposited on the substrate is such that each material is incident on the substrate at a substantially symmetrical angle with respect to a perpendicular to the substrate.

【0007】上記発光層のEL材料を上記基板に立てた
垂線に対して互いにほぼ対称な角度で入射させるには、
蒸着源を上記基板に対して移動させるものや、基板を上
記蒸着源に対して平行移動又は揺動させるものや、同一
条件の蒸着源を複数設け、同一条件で蒸着させるもので
ある。
In order for the EL material of the light emitting layer to be incident at substantially symmetrical angles with respect to a vertical line standing on the substrate,
An evaporation source is moved with respect to the substrate, a substrate is moved or swung with respect to the evaporation source, or a plurality of evaporation sources under the same conditions are provided to perform evaporation under the same conditions.

【0008】[0008]

【発明の実施の形態】以下、この発明の実施の形態につ
いて図面を基にして説明する。図1、図2はこの発明の
有機EL素子の一実施形態を示すもので、この実施形態
の有機EL素子は、図1に示すように、ガラスや石英、
樹脂等の透明な基板10の一方の側にITO等の透明な
電極材料による透明電極12が形成されている。透明電
極12は、ストライプ状に形成され、その表面には、5
00Å程度のホール輸送材料14、及び500Å程度の
電子輸送材料16その他発光材料による有機EL材料か
らなる発光層15が積層されている。そして、発光層1
5の電子輸送材料16の表面には、例えばLiを0.0
1〜0.05%程度含む純度99%程度のAl−Li合
金の背面電極18を、適宜の500Å〜1000Å程度
の厚さで、透明電極12と直交する方向にストライプ状
に形成されている。
Embodiments of the present invention will be described below with reference to the drawings. FIGS. 1 and 2 show an embodiment of the organic EL device of the present invention. As shown in FIG.
A transparent electrode 12 made of a transparent electrode material such as ITO is formed on one side of a transparent substrate 10 such as a resin. The transparent electrode 12 is formed in a stripe shape, and has a surface
A hole transporting material 14 of about 00 °, an electron transporting material 16 of about 500 °, and a light emitting layer 15 made of an organic EL material made of a light emitting material are laminated. And the light emitting layer 1
On the surface of the electron transport material 16 of No. 5, for example, Li
A back electrode 18 of an Al-Li alloy having a purity of about 99% containing about 1 to 0.05% is formed in a stripe shape in a direction perpendicular to the transparent electrode 12 at an appropriate thickness of about 500 to 1000 °.

【0009】さらに、この背面電極18の表面には、適
宜99.999%以上の純度のAl等によるによる導電
パターンを形成しても良い。背面電極18の表面には、
さらに、保護層20が積層されている。保護層20は、
Ag、Al等の金属薄膜や、フェノール、エポキシ等の
樹脂や、導電性塗料により形成され、背面電極18及び
発光層15を外気から遮断するものである。
Further, a conductive pattern made of Al or the like having a purity of 99.999% or more may be appropriately formed on the surface of the back electrode 18. On the surface of the back electrode 18,
Further, a protective layer 20 is laminated. The protective layer 20
It is formed of a metal thin film such as Ag or Al, a resin such as phenol or epoxy, or a conductive paint, and shields the back electrode 18 and the light emitting layer 15 from the outside air.

【0010】発光層15は、母体材料のうちホール輸送
材料14としては、トリフェニルアミン誘導体(TP
D)、ヒドラゾン誘導体、アリールアミン誘導体等があ
る。また、電子輸送材料16としては、アルミキレート
錯体(Alq3)、ジスチリルビフェニル誘導体(DP
VBi)、オキサジアゾール誘導体、ビスチリルアント
ラセン誘導体、ベンゾオキサゾールチオフェン誘導体、
ペリレン類、チアゾール類等を用いる。さらに、適宜の
発光材料を混合しても良く、ホール輸送材料14と電子
輸送材料16を混合した発光層15を形成しても良く、
その場合、ホール輸送材料14と電子輸送材料16の比
は、10:90乃至90:10の範囲で適宜変更可能で
ある。
The light-emitting layer 15 is formed of a triphenylamine derivative (TP
D), hydrazone derivatives, arylamine derivatives and the like. The electron transporting material 16 includes an aluminum chelate complex (Alq 3 ), a distyrylbiphenyl derivative (DP
VBi), an oxadiazole derivative, a bistyrylanthracene derivative, a benzoxazolethiophene derivative,
Perylenes, thiazoles and the like are used. Further, an appropriate light emitting material may be mixed, and a light emitting layer 15 in which the hole transport material 14 and the electron transport material 16 are mixed may be formed.
In that case, the ratio of the hole transporting material 14 to the electron transporting material 16 can be changed as appropriate within the range of 10:90 to 90:10.

【0011】この実施形態の有機EL素子の製造方法
は、基板10の表面に、ITO等の透明電極12の電極
材料を、真空薄膜形成技術により全面に形成する。透明
電極材料は、その抵抗率が、10Ω/□程度の抵抗率に
なるように約1μm程度の厚さに形成する。この後、ス
トライプ状にエッチング材料を塗布し、透明電極材料を
ストライプ状にエッチングして透明電極12を形成す
る。この後、透明電極12の表面に、ホール輸送材料1
4及び発光材料を含む電子輸送材料16を、真空薄膜形
成技術により各々順次一面に積層する。
In the method of manufacturing an organic EL device according to this embodiment, an electrode material for a transparent electrode 12 such as ITO is formed on the entire surface of a substrate 10 by a vacuum thin film forming technique. The transparent electrode material is formed to a thickness of about 1 μm so that the resistivity is about 10 Ω / □. Thereafter, an etching material is applied in a stripe shape, and the transparent electrode material is etched in a stripe shape to form a transparent electrode 12. Then, the hole transport material 1 is applied to the surface of the transparent electrode 12.
4 and an electron transporting material 16 including a light emitting material are sequentially laminated on one surface by a vacuum thin film forming technique.

【0012】発光層15の蒸着に際して、各ホール輸送
材料14及び電子輸送材料16を基板に蒸着する際の蒸
着方向を、基板10に立てた垂線に対して互いにほぼ対
称な角度で入射させるようにする。そのために、図2に
示すように、ホール輸送材料14の蒸着に際して、約半
分の蒸着を基板10に対して一方の側に蒸着源24を設
置して蒸着し、残りの半分の蒸着は、蒸着源24を反対
側へ移動させて行なう。蒸着範囲はシャッター26によ
り規制し、移動中及び昇温中はシャッター26を閉じて
おく。発光材料を含む電子輸送材料16の蒸着も同様に
行なう。なお、この移動は、加熱しながらシャッター2
6を開けて移動しても良い。
At the time of depositing the light emitting layer 15, the direction in which the hole transporting material 14 and the electron transporting material 16 are deposited on the substrate is set so that they are incident at substantially symmetric angles with respect to a perpendicular line on the substrate 10. I do. For this purpose, as shown in FIG. 2, when the hole transport material 14 is deposited, about half of the deposition is performed by installing the deposition source 24 on one side of the substrate 10, and the other half of the deposition is performed by the deposition This is done by moving the source 24 to the opposite side. The vapor deposition range is regulated by the shutter 26, and the shutter 26 is closed during movement and during temperature rise. The vapor deposition of the electron transporting material 16 including the light emitting material is performed in the same manner. In addition, this movement is performed by heating the shutter 2
6 may be opened and moved.

【0013】発光層15の蒸着後、Liを0.01〜
0.05%程度含む純度99%程度のAl−Li合金に
よる背面電極材料を、適宜の500Å〜1000Å程度
の厚さに真空薄膜形成技術によりストライプ状に形成す
る。背面電極18の表面には、例えばマスク蒸着によ
り、導電層24と直角方向にAl等によるによる導電パ
ターンを形成する。また、Alを全面に蒸着後、エッチ
ングによりストライプパターンを形成しても良い。そし
て、適宜保護層20を積層する。保護層20は、Ag、
Al等の金属薄膜や、フェノール、エポキシ等の樹脂
や、導電性塗料により形成され、背面電極18及び発光
層15を外気から遮断するものである。
After the deposition of the light emitting layer 15, the Li content is set to 0.01 to
A back electrode material made of an Al-Li alloy having a purity of about 99% containing about 0.05% is formed in a stripe shape by a vacuum thin film forming technique to an appropriate thickness of about 500 to 1000 °. A conductive pattern of Al or the like is formed on the surface of the back electrode 18 in a direction perpendicular to the conductive layer 24 by, for example, mask evaporation. Alternatively, a stripe pattern may be formed by etching after vapor deposition of Al on the entire surface. Then, the protective layer 20 is appropriately laminated. The protective layer 20 is made of Ag,
It is made of a metal thin film such as Al, a resin such as phenol or epoxy, or a conductive paint, and shields the back electrode 18 and the light emitting layer 15 from the outside air.

【0014】ここで蒸着条件は、例えば、真空度が6×
10-6Torrで、EL材料の場合50Å/secの蒸
着速度で成膜させる。また、発光層15等をフラッシュ
蒸着により形成しても良い。フラッシュ蒸着法は、予め
所定の比率で混合した有機EL材料を、300〜600
℃好ましくは、400〜500℃に加熱した蒸着源に落
下させ、有機EL材料を一気に蒸発させるものである。
また、その有機EL材料を容器中に収容し、急速にその
容器を加熱し、一気に蒸着させるものでも良い。
Here, the deposition conditions are, for example, that the degree of vacuum is 6 ×
At 10 −6 Torr, a film is formed at a deposition rate of 50 ° / sec in the case of an EL material. Further, the light emitting layer 15 and the like may be formed by flash evaporation. In the flash evaporation method, an organic EL material mixed in a predetermined ratio in advance is used for 300 to 600 times.
C. Preferably, the organic EL material is dropped at a deposition source heated to 400 to 500.degree. C. to evaporate the organic EL material at a stretch.
Alternatively, the organic EL material may be housed in a container, and the container may be rapidly heated and vapor-deposited at once.

【0015】なお、発光層15のEL材料を基板10に
立てた垂線に対して互いにほぼ対称な角度で入射させる
方法として、蒸着源24を基板10に対して移動させる
ものや、基板10を蒸着源24に対して平行移動又は揺
動させて、透明電極12の側面及び角部に材料が蒸着さ
れるようにしても良い。この平行移動又は揺動は、異方
光に1回のみでも良く、往復動させるものでも良い。さ
らに、同一条件の蒸着源24を複数設け、同一条件で蒸
着させるものでも良い。その場合、蒸着源24の加熱装
置を直列に接続し、同一条件で、加熱がなされるように
すると良い。
As a method of causing the EL material of the light-emitting layer 15 to enter at an angle substantially symmetrical with respect to a perpendicular set on the substrate 10, a method of moving the evaporation source 24 relative to the substrate 10 or a method of depositing the substrate 10 The material may be deposited on the sides and corners of the transparent electrode 12 by translating or swinging with respect to the source 24. This parallel movement or swing may be performed only once for the anisotropic light, or may be reciprocated. Further, a plurality of evaporation sources 24 under the same conditions may be provided, and the evaporation may be performed under the same conditions. In that case, it is preferable to connect heating devices of the evaporation source 24 in series so that heating is performed under the same conditions.

【0016】この発明の有機EL素子は、透明電極に蒸
着される有機EL材料が、互いに相対的にほぼ対称の反
対側に位置して、基板に対して蒸着するものであれば良
く、移動方法や配置手段は問わない。また、蒸着方法
は、通常の真空蒸着の他、スパッタリングやその他の真
空中で原子または分子の粒子を飛ばして付着させる薄膜
形成方法を用いたものであれば良い。
The organic EL device according to the present invention may be any device as long as the organic EL material to be deposited on the transparent electrode is located on the opposite side substantially symmetrically to each other and is deposited on the substrate. And arrangement means does not matter. In addition, the vapor deposition method may be a method using a thin film forming method in which atomic or molecular particles are skipped and adhered in a vacuum or by sputtering in addition to ordinary vacuum vapor deposition.

【0017】[0017]

【発明の効果】この発明の有機EL素子の製造方法は、
透明電極の側面部に確実にEL材料が蒸着し、背面電極
と透明電極間での短絡が生じないものであり、製造時の
歩留が向上し、品質も良いものとなる。また、透明電極
の側面部にも発光層が形成されるため、発光効率の良い
ものとなる。
The method for manufacturing an organic EL device according to the present invention comprises:
The EL material is surely deposited on the side surface of the transparent electrode, and no short circuit occurs between the back electrode and the transparent electrode, so that the production yield is improved and the quality is good. Further, since the light emitting layer is also formed on the side surface of the transparent electrode, the light emitting efficiency is improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明の一実施形態の有機EL素子の断面図
である。
FIG. 1 is a sectional view of an organic EL device according to an embodiment of the present invention.

【図2】この発明の一実施形態の有機EL素子の製造工
程の概略図である。
FIG. 2 is a schematic view of a manufacturing process of the organic EL device according to one embodiment of the present invention.

【図3】従来の技術の有機EL素子の断面図である。FIG. 3 is a cross-sectional view of a conventional organic EL device.

【符号の説明】[Explanation of symbols]

10 基板 12 透明電極 14 ホール輸送材料 15 発光層 16 電子輸送材料 18 背面電極 DESCRIPTION OF SYMBOLS 10 Substrate 12 Transparent electrode 14 Hole transport material 15 Light emitting layer 16 Electron transport material 18 Back electrode

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 透明な基板表面に透明な電極材料により
所定形状の透明電極を形成し、この透明電極の表面にホ
ール輸送材料及び電子輸送材料その他発光材料による有
機EL材料からなる発光層を積層し、その際に、上記透
明電極が形成された基板に対する上記発光層の蒸着方向
を、各層毎に各々上記透明電極に対する入射が互いに反
対方向となるようにし、この後、背面電極を蒸着する有
機EL素子の製造方法。
1. A transparent electrode having a predetermined shape is formed on a transparent substrate surface with a transparent electrode material, and a light emitting layer made of a hole transporting material, an electron transporting material, or another organic EL material made of a light emitting material is laminated on the surface of the transparent electrode. At this time, the direction of vapor deposition of the light emitting layer with respect to the substrate on which the transparent electrode is formed is such that the incidence on the transparent electrode is opposite to each other for each layer. Manufacturing method of EL element.
【請求項2】 上記各発光層を基板に蒸着する際の蒸着
方向は、各材料を上記基板に立てた垂線に対して互いに
ほぼ対称な角度で入射させるものである請求項1記載の
有機EL素子。
2. The organic EL device according to claim 1, wherein the respective light emitting layers are deposited at a substantially symmetric angle with respect to a vertical line formed on the substrate in a deposition direction when the respective light emitting layers are deposited on the substrate. element.
【請求項3】 上記発光層のEL材料を上記基板に立て
た垂線に対して互いにほぼ対称な角度で入射させるに
は、蒸着源を上記基板に対して移動させる請求項1又は
2記載の有機EL素子の製造方法。
3. An organic material according to claim 1, wherein an evaporation source is moved with respect to the substrate so that the EL material of the light emitting layer is incident on the perpendicular to the substrate at substantially symmetrical angles. Manufacturing method of EL element.
【請求項4】 上記発光層のEL材料を上記基板に立て
た垂線に対して互いにほぼ対称な角度で入射させるに
は、上記基板を上記蒸着源に対して平行移動又は揺動さ
せる請求項1又は2記載の有機EL素子の製造方法。
4. The method according to claim 1, wherein the substrate is translated or swung with respect to the vapor deposition source so that the EL material of the light emitting layer is incident on the perpendicular to the substrate at substantially symmetrical angles with respect to each other. Or the method for producing an organic EL device according to 2.
【請求項5】 上記発光層のEL材料を上記基板に立て
た垂線に対して互いにほぼ対称な角度で入射させるに
は、同一条件の蒸着源を複数設け、各々同一条件で蒸着
させる請求項1又は2記載の有機EL素子の製造方法。
5. A method according to claim 1, wherein a plurality of vapor deposition sources under the same condition are provided, and vapor deposition is performed under the same condition, in order to cause the EL material of the light emitting layer to be incident at a substantially symmetrical angle with respect to a perpendicular to the substrate. Or the method for producing an organic EL device according to 2.
JP8334851A 1996-11-29 1996-11-29 Manufacturing method of organic EL element Pending JPH10162954A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8334851A JPH10162954A (en) 1996-11-29 1996-11-29 Manufacturing method of organic EL element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8334851A JPH10162954A (en) 1996-11-29 1996-11-29 Manufacturing method of organic EL element

Publications (1)

Publication Number Publication Date
JPH10162954A true JPH10162954A (en) 1998-06-19

Family

ID=18281937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8334851A Pending JPH10162954A (en) 1996-11-29 1996-11-29 Manufacturing method of organic EL element

Country Status (1)

Country Link
JP (1) JPH10162954A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004063454A (en) * 2002-06-03 2004-02-26 Semiconductor Energy Lab Co Ltd Evaporation equipment
JP2013147754A (en) * 1999-12-27 2013-08-01 Semiconductor Energy Lab Co Ltd Film formation method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013147754A (en) * 1999-12-27 2013-08-01 Semiconductor Energy Lab Co Ltd Film formation method
US8968823B2 (en) 1999-12-27 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light emitting device
US9559302B2 (en) 1999-12-27 2017-01-31 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a display device
JP2018066066A (en) * 1999-12-27 2018-04-26 株式会社半導体エネルギー研究所 Deposition method
JP2004063454A (en) * 2002-06-03 2004-02-26 Semiconductor Energy Lab Co Ltd Evaporation equipment

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