JPH10163710A - Transmission line for high frequency - Google Patents
Transmission line for high frequencyInfo
- Publication number
- JPH10163710A JPH10163710A JP8316475A JP31647596A JPH10163710A JP H10163710 A JPH10163710 A JP H10163710A JP 8316475 A JP8316475 A JP 8316475A JP 31647596 A JP31647596 A JP 31647596A JP H10163710 A JPH10163710 A JP H10163710A
- Authority
- JP
- Japan
- Prior art keywords
- line
- dielectric substrate
- frequency
- conductor
- conductor line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Waveguides (AREA)
Abstract
(57)【要約】
【課題】 従来のマイクロストリップ線路では、誘電体
基板表面に被着形成した導体線路の下面の両端に電界・
電流が集中するために、高周波領域において高周波信号
の伝送損失が増大するという問題点があった。
【解決手段】 裏面にグランド導体層2を有する誘電体
基板1の表面に、誘電体基板1中に下面が埋め込まれ、
上面が露出している導体線路3を設けたことを特徴とす
る高周波用伝送線路である。導体線路3の下面における
誘電率分布の変化をなくすことができて導体線路3下面
の両端への電界・電流の集中を緩和させることができ、
高周波領域においても高周波信号の伝送損失の発生を抑
制することができるものとなる。
(57) [Summary] [PROBLEMS] In a conventional microstrip line, an electric field is applied to both ends of a lower surface of a conductor line formed on a surface of a dielectric substrate.
Since the current is concentrated, there is a problem that transmission loss of a high-frequency signal increases in a high-frequency region. SOLUTION: The lower surface is embedded in the dielectric substrate 1 on the surface of the dielectric substrate 1 having the ground conductor layer 2 on the rear surface,
This is a high-frequency transmission line provided with a conductor line 3 whose upper surface is exposed. A change in the dielectric constant distribution on the lower surface of the conductor line 3 can be eliminated, and the concentration of electric field and current on both ends of the lower surface of the conductor line 3 can be reduced.
Even in a high-frequency region, transmission loss of a high-frequency signal can be suppressed.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、高周波信号、特に
マイクロ波・ミリ波帯域の高周波信号回路基板における
信号伝送に好適な高周波用伝送線路に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency signal transmission line, and more particularly to a high-frequency transmission line suitable for signal transmission on a high-frequency signal circuit board in a microwave / millimeter-wave band.
【0002】[0002]
【従来の技術】従来、マイクロ波帯域やミリ波帯域の高
周波信号を用いる高周波回路においては、それらの高周
波信号を伝送するための伝送線路として例えばマイクロ
ストリップ線路が用いられている。2. Description of the Related Art Conventionally, in a high-frequency circuit using high-frequency signals in a microwave band or a millimeter-wave band, for example, a microstrip line is used as a transmission line for transmitting those high-frequency signals.
【0003】高周波用伝送線路としての従来のマイクロ
ストリップ線路は、図4に斜視図で示すように、絶縁層
ならびに導体線路の支持層として機能する誘電体基板1
と、誘電体基板1の下面(裏面)のほぼ全面に被着形成
されたグランド導体層2と、誘電体基板1の上面(表
面)にグランド導体層2と相対するように被着形成され
た導体線路(ストリップ導体)3とからなる構造を有し
ている。A conventional microstrip line as a high-frequency transmission line is, as shown in a perspective view in FIG. 4, a dielectric substrate 1 functioning as an insulating layer and a support layer for a conductor line.
And a ground conductor layer 2 formed on substantially the entire lower surface (back surface) of the dielectric substrate 1, and a ground conductor layer 2 formed on the upper surface (front surface) of the dielectric substrate 1 so as to face the ground conductor layer 2. And a conductor line (strip conductor) 3.
【0004】誘電体基板1の材料には各種の絶縁性セラ
ミックスや絶縁性樹脂系の材料あるいはその他の誘電体
材料等が用いられており、グランド導体層2と導体線路
3の材料には誘電体基板1の材料に応じてその上に被着
形成可能な導体材料が用いられる。そして、通常は誘電
体基板1の裏面にグランド導体層2を、表面に所望のパ
ターン形状の導体線路3を形成して、誘電体基板1上に
高周波信号を用いる電気回路あるいは電子回路を平面的
に実現している。As the material of the dielectric substrate 1, various insulating ceramics, insulating resin-based materials, or other dielectric materials are used, and the materials of the ground conductor layer 2 and the conductor line 3 are dielectric materials. Depending on the material of the substrate 1, a conductive material that can be formed thereon is used. Normally, a ground conductor layer 2 is formed on the back surface of the dielectric substrate 1 and a conductor line 3 having a desired pattern is formed on the front surface, and an electric circuit or an electronic circuit using a high-frequency signal is formed on the dielectric substrate 1 in a planar manner. Has been realized.
【0005】このようなマイクロストリップ線路は生産
性および集積性に優れていることから、高周波信号の伝
送に導波管等を用いた立体的な高周波回路と比較して、
小型化や量産に適した高周波回路基板用の伝送線路であ
る。Since such a microstrip line is excellent in productivity and integration, compared with a three-dimensional high-frequency circuit using a waveguide or the like for transmitting a high-frequency signal,
This is a transmission line for a high-frequency circuit board suitable for miniaturization and mass production.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、上記構
成のマイクロストリップ線路においては、平板状の誘電
体基板1の表面に導体パターンとして導体線路3が被着
形成されるという構造自体が持つ電気特性上の問題点を
有していた。すなわち、マイクロストリップ線路によっ
て伝送される高周波信号は線路を伝搬する電磁波である
が、その伝搬モードは準TEM(Transverse Electro-M
agnetic )モードとなっており、このモードにおいては
電界(電気力線)が導体線路3からグランド導体層2の
面に向かって分布している。その分布は、図4中に4で
電気力線を示すように、導体線路3の上面から出る電気
力線も多少は存在するが、電気力線4の大部分は導体線
路3と誘電体基板1との接合部分に集中しており、特に
誘電体基板1と接している導体線路3の端部に集中して
いる。これは誘電体基板1の裏面に形成されているグラ
ンド導体層2までの電気的な経路が最短となるように電
界(電気力線4)が分布するためであり、この結果とし
て、電界の大部分は誘電体基板1中において導体線路3
とグランド導体層2とで挟まれる部分に存在することと
なる。さらに導体線路3における電流密度を考慮する
と、導体線路3の断面形状が通常は図4に示したような
横長の矩形状または上に凸の円弧状であることから導体
線路3の両端部で電流密度が著しく増大しているので、
電磁界のエネルギー分布が誘電体基板1に接している側
の導体線路3の両端に集中することとなり、導体線路3
の端部を集中して流れる電流が導体の抵抗により熱エネ
ルギーに変換されて電気的なロスを生じてしまい、伝送
損失が生ずるという問題点があった。このため、特に数
10GHzといった高周波帯域において導体線路3におけ
る伝送損失が増大するという問題点もあった。However, in the microstrip line having the above-mentioned structure, the structure itself in which the conductor line 3 is formed as a conductor pattern on the surface of the flat dielectric substrate 1 has an electric characteristic. Had the problem of That is, the high-frequency signal transmitted by the microstrip line is an electromagnetic wave propagating through the line, and its propagation mode is a quasi-TEM (Transverse Electro-M
In this mode, an electric field (lines of electric force) is distributed from the conductor line 3 toward the surface of the ground conductor layer 2. As shown in FIG. 4, the distribution of the electric flux lines is indicated by 4 in FIG. 4, but some of the electric flux lines exit from the upper surface of the conductor line 3. 1 and particularly at the end of the conductor line 3 in contact with the dielectric substrate 1. This is because the electric field (lines of electric force 4) is distributed such that the electric path to the ground conductor layer 2 formed on the back surface of the dielectric substrate 1 is the shortest, and as a result, the electric field is large. The part is a conductor line 3 in the dielectric substrate 1.
And the ground conductor layer 2. Further, when the current density in the conductor line 3 is taken into consideration, the cross-sectional shape of the conductor line 3 is usually a horizontally long rectangular shape as shown in FIG. Because the density has increased significantly,
The energy distribution of the electromagnetic field is concentrated on both ends of the conductor line 3 on the side in contact with the dielectric substrate 1, and the conductor line 3
However, there is a problem in that a current flowing intensively at the end of the conductor is converted into thermal energy by the resistance of the conductor, causing an electrical loss, thereby causing a transmission loss. Because of this, especially
There is also a problem that transmission loss in the conductor line 3 increases in a high frequency band such as 10 GHz.
【0007】本発明は上記問題点を解決すべく案出され
たものであり、その目的は、高周波用伝送線路であるマ
イクロストリップ線路において、導体線路の両端部への
電界や電流の集中を緩和することにより高周波信号の伝
送損失の発生を抑制した、良好な伝送特性を有する高周
波用伝送線路を提供することにある。SUMMARY OF THE INVENTION The present invention has been devised to solve the above problems, and an object of the invention is to reduce the concentration of an electric field or current at both ends of a conductor line in a microstrip line as a high-frequency transmission line. Accordingly, it is an object of the present invention to provide a high-frequency transmission line having good transmission characteristics in which transmission loss of a high-frequency signal is suppressed.
【0008】[0008]
【課題を解決するための手段】本発明の高周波用伝送線
路は、裏面にグランド導体層を有する誘電体基板の表面
に、該誘電体基板中に下面が埋め込まれ、上面が露出し
ている導体線路を設けたことを特徴とするものである。A high-frequency transmission line according to the present invention is a conductor having a lower surface buried in a dielectric substrate having a ground conductor layer on the back surface, the lower surface being embedded in the dielectric substrate, and an upper surface being exposed. It is characterized by providing a line.
【0009】本発明の高周波用伝送線路によれば、導体
線路の下面が誘電体基板中に埋め込まれた構造としたこ
とから、誘電体基板と接している側の導体線路の両端に
おける誘電率が大きく変化することがなくなって電界
(電気力線)や電流が集中する導体線路の下面をすべて
同一の誘電率分布中に存在させることができ、導体線路
下面の両端への電磁界分布の集中を緩和させることが可
能となって、導体線路を伝搬する高周波信号の伝送損失
の発生を抑制することができるものとなる。According to the high-frequency transmission line of the present invention, since the lower surface of the conductor line is embedded in the dielectric substrate, the permittivity at both ends of the conductor line in contact with the dielectric substrate is reduced. The lower surface of the conductor line on which the electric field (line of electric force) and current are concentrated without largely changing can be present in the same dielectric constant distribution, and the concentration of the electromagnetic field distribution on both ends of the lower surface of the conductor line can be reduced. As a result, the transmission loss of the high-frequency signal propagating through the conductor line can be suppressed.
【0010】また、導体線路の下面が誘電体基板中に埋
め込まれた構造としたことにより導体線路の下面におけ
る誘電率分布を均一にすることができることから、導体
線路下面の両端への磁束密度の集中をも緩和させること
が可能となる。磁束密度の分布の疎密は電流密度の分布
に直接関連があるので、これによっても導体線路下面の
両端への電流の集中を緩和させることができ、伝送損失
の発生を抑制することができるものとなる。Further, since the lower surface of the conductor line is embedded in the dielectric substrate, the distribution of the dielectric constant on the lower surface of the conductor line can be made uniform. It is also possible to reduce concentration. Since the density distribution of the magnetic flux density is directly related to the current density distribution, it is also possible to reduce the concentration of current at both ends of the lower surface of the conductor line, thereby suppressing the occurrence of transmission loss. Become.
【0011】また、本発明の高周波用伝送線路によれ
ば、下面が誘電体基板中に埋め込まれた導体線路の上面
を露出させていることから、パターン設計がしやすく、
従来のマイクロストリップ線路と同様に焼成等により製
造した後に調整が必要になった場合にもトリミング処理
による調整が容易であり、また、素子部品の実装が容易
であって、集積性もよく、電子部品の実装性が高い回路
基板を提供することができるものである。According to the high-frequency transmission line of the present invention, since the lower surface exposes the upper surface of the conductor line embedded in the dielectric substrate, the pattern can be easily designed.
In the case where adjustment is necessary after manufacturing by firing or the like as in the case of the conventional microstrip line, adjustment by trimming is easy, mounting of element parts is easy, integration is good, and electronic It is possible to provide a circuit board having high mountability of components.
【0012】以上により、本発明によれば、導体線路中
を伝搬する高周波信号の伝送損失の発生を抑制した、良
好な伝送特性を有する高周波用伝送線路となる。As described above, according to the present invention, there is provided a high-frequency transmission line having excellent transmission characteristics in which transmission loss of a high-frequency signal propagating in a conductor line is suppressed.
【0013】[0013]
【発明の実施の形態】以下、本発明の高周波用伝送線路
につき図面に基づいて詳細に説明する。図1は本発明の
高周波用伝送線路の実施の形態の一例を示す図4と同様
の斜視図である。図1において図4と同様の箇所には同
じ符号を付してあり、1は誘電体基板、2はグランド導
体層、3は導体線路であり、4は電気力線を示してい
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A high-frequency transmission line according to the present invention will be described below in detail with reference to the drawings. FIG. 1 is a perspective view similar to FIG. 4, showing an example of a high-frequency transmission line according to an embodiment of the present invention. In FIG. 1, the same parts as those in FIG. 4 are denoted by the same reference numerals, 1 is a dielectric substrate, 2 is a ground conductor layer, 3 is a conductor line, and 4 is a line of electric force.
【0014】誘電体基板1は絶縁層ならびに導体線路3
の支持層として機能し、その材料には、例えばアルミナ
系材料・窒化アルミ系材料等の各種の絶縁性セラミック
スやPTFE・ガラスエポキシ等の絶縁性樹脂系の材料
等の誘電体材料等が用いられている。その誘電率や厚み
・寸法等は、この高周波用伝送線路が用いられる高周波
回路の仕様に応じて、所望のインピーダンス例えば50Ω
を実現するように、他の構成部材との関連で設定され
る。The dielectric substrate 1 includes an insulating layer and a conductor line 3.
The material used is a dielectric material such as various insulating ceramics such as an alumina-based material or an aluminum nitride-based material, or an insulating resin-based material such as PTFE or glass epoxy. ing. The dielectric constant, thickness, dimensions, etc., of the desired impedance, e.g.
Are set in relation to other components.
【0015】グランド導体層2は誘電体基板1の裏面
(下面)のほぼ全面に被着形成されたタングステンやク
ロム・モリブデン・銅・銀・金等から成る導体層であ
り、適当な手段や方法により接地されている。この材料
には誘電体基板1の材料に応じてその上に被着形成可能
な導体材料が用いられ、マイクロ波帯域やミリ波帯域の
高周波信号に対しては例えばアルミナ系材料の誘電体基
板1とクロム−銅−ニッケル−金から成るグランド導体
層2との組合せ等を用いればよい。The ground conductor layer 2 is a conductor layer made of tungsten, chromium, molybdenum, copper, silver, gold, or the like which is formed on substantially the entire back surface (lower surface) of the dielectric substrate 1. Grounded. As this material, a conductor material that can be formed on the dielectric substrate 1 according to the material of the dielectric substrate 1 is used. For a high frequency signal in a microwave band or a millimeter band, for example, the dielectric substrate 1 of an alumina material is used. And a ground conductor layer 2 made of chromium-copper-nickel-gold may be used.
【0016】そして、本発明の高周波用伝送線路におい
ては、誘電体基板1の表面に設けられた導体線路3が、
その下面が誘電体基板中に埋め込まれ、上面が露出して
いることを特徴としているものであり、図1に示した例
においては導体線路3の上面が誘電体基板1の表面とほ
ぼ同一平面となるように導体線路3が誘電体基板1中に
埋め込まれている。これにより、導体線路3の下面にお
ける誘電率の分布が均一なものとなるため、同図中に示
したように導体線路3下面の両端への電気力線4の集中
が緩和され、導体線路3中を伝搬する高周波信号の伝送
損失の発生が抑制されるものとなる。In the high-frequency transmission line of the present invention, the conductor line 3 provided on the surface of the dielectric substrate 1
The lower surface is embedded in the dielectric substrate, and the upper surface is exposed. In the example shown in FIG. 1, the upper surface of the conductor line 3 is substantially flush with the surface of the dielectric substrate 1. The conductor line 3 is embedded in the dielectric substrate 1 such that Thereby, the distribution of the dielectric constant on the lower surface of the conductor line 3 becomes uniform, so that the concentration of the electric flux lines 4 at both ends of the lower surface of the conductor line 3 is reduced as shown in FIG. The transmission loss of the high-frequency signal propagating in the inside is suppressed.
【0017】また、図2は本発明の高周波用伝送線路の
実施の形態の他の例を示す斜視であり、同図において図
1・図4と同様の箇所には同じ符号を付してある。図2
においては、導体線路3のほぼ下半分を誘電体基板1中
に埋め込むことにより、その下面が誘電体基板中に埋め
込まれ、上面が露出している例を示している。これによ
っても導体線路3の下面における誘電率の分布が均一な
ものとなるため、同図中に示したように導体線路3下面
の両端への電気力線4の集中が緩和され、導体線路3中
を伝搬する高周波信号の伝送損失の発生が抑制されるも
のとなる。FIG. 2 is a perspective view showing another embodiment of the high-frequency transmission line according to the present invention. In FIG. 2, the same parts as those in FIGS. 1 and 4 are denoted by the same reference numerals. . FIG.
1 shows an example in which substantially the lower half of the conductor line 3 is embedded in the dielectric substrate 1 so that the lower surface is embedded in the dielectric substrate and the upper surface is exposed. This also makes the distribution of the dielectric constant on the lower surface of the conductor line 3 uniform, so that the concentration of the electric flux lines 4 at both ends of the lower surface of the conductor line 3 is reduced as shown in FIG. The transmission loss of the high-frequency signal propagating in the inside is suppressed.
【0018】本発明の高周波用伝送線路における導体線
路3の断面形状は、その基部(下面)が平坦であれば、
図1および図2に示したような横長の矩形状の他、上に
凸の円弧状でもよく、台形状でもよい。また導体線路3
に用いる導体材料には、グランド導体層2と同様、誘電
体基板1の材料に応じてその上に被着形成可能な導体材
料を用いればよい。The cross-sectional shape of the conductor line 3 in the high-frequency transmission line of the present invention is such that its base (lower surface) is flat.
In addition to the horizontally long rectangular shape as shown in FIGS. 1 and 2, an upwardly convex arc shape or a trapezoidal shape may be used. In addition, conductor line 3
As in the case of the ground conductor layer 2, a conductor material that can be formed on the dielectric substrate 1 according to the material of the dielectric substrate 1 may be used.
【0019】そして、導体線路3の断面形状や幅・厚み
等の寸法、誘電体基板1中に埋め込む深さ等は、この高
周波用伝送線路が用いられる高周波回路の仕様に応じ
て、所望のインピーダンス例えば50Ωを実現するよう
に、他の構成部材との関連で設定される。The dimensions such as the cross-sectional shape, width, thickness, etc. of the conductor line 3 and the depth to be embedded in the dielectric substrate 1 are determined according to the specifications of the high-frequency circuit in which the high-frequency transmission line is used. For example, it is set in relation to other components so as to realize 50Ω.
【0020】また、この導体線路3はその下面が誘電体
基板1中に埋め込まれ、上面が露出していれば、上述の
例の他にも、導体線路3を誘電体基板1中にさらに深く
埋め込んで導体線路3の上面が誘電体基板1の表面より
下がった状態となっていてもよい。この場合にも上述の
作用効果を奏するとともに、導体線路3の上面が露出し
ていることから、集中定数的な電子部品が実装可能であ
り、また、焼成後の微調整が可能なマイクロストリップ
線路として良好な伝送特性を有する高周波用伝送線路と
なる。If the lower surface of the conductor line 3 is embedded in the dielectric substrate 1 and the upper surface is exposed, the conductor line 3 can be further deepened into the dielectric substrate 1 in addition to the above example. It may be embedded so that the upper surface of the conductor line 3 is lower than the surface of the dielectric substrate 1. In this case as well, the above-described functions and effects are exhibited, and since the upper surface of the conductor line 3 is exposed, a lumped electronic component can be mounted. As a result, a high-frequency transmission line having good transmission characteristics is obtained.
【0021】本発明の高周波用伝送線路によれば、高周
波信号に対して伝送損失の小さい良好な伝送特性を有す
る伝送線路となることから高周波回路に好適な伝送線路
となり、例えば無線機器等の高周波回路部分の回路基板
における伝送線路として使用した場合には消費電力が少
なくて済むものとできるものとなる。According to the high-frequency transmission line of the present invention, since the transmission line has good transmission characteristics with a small transmission loss with respect to a high-frequency signal, the transmission line is suitable for a high-frequency circuit. When used as a transmission line in a circuit board of a circuit portion, power consumption can be reduced.
【0022】[0022]
【実施例】次に、本発明の高周波用伝送線路について具
体例を説明する。Next, a specific example of the high-frequency transmission line of the present invention will be described.
【0023】まず、誘電体基板1として、厚さh=0.2
mm、材料定数εr(比誘電率)=9.6 、tanδeff
(実効誘電損失)=45×10-4なる値を持つアルミナ系材
料から成る基板を用い、その裏面にグランド導体層2と
して、厚さt=10μm、材料定数σeff (実効導電率)
=1.67×107 (S/m)なる値を持つクロム−銅−ニッ
ケル−金から成る導体層を被着形成した。また、その表
面に導体線路3として、厚さt=10μm、線路幅w=0.
2 mm、材料定数σeff (実効導電率)=1.67×10
7 (S/m)なる値を持つクロム−銅−ニッケル−金か
ら成る導体線路層をその上面が誘電体基板1の表面と同
一平面となるように誘電体基板1中に埋め込んで設け、
図1に示した構成の本発明の高周波用伝送線路Aを作製
した。First, as the dielectric substrate 1, a thickness h = 0.2
mm, material constant εr (relative permittivity) = 9.6, tan δ eff
A substrate made of an alumina-based material having a value of (effective dielectric loss) = 45 × 10 −4 is used, and a ground conductor layer 2 is provided on the back surface as a thickness t = 10 μm and a material constant σ eff (effective conductivity).
A conductor layer made of chromium-copper-nickel-gold having a value of 1.67 × 10 7 (S / m) was deposited. Further, the conductor line 3 is formed on the surface as a conductor line 3 having a thickness t = 10 μm and a line width w = 0.
2 mm, material constant σ eff (effective conductivity) = 1.67 × 10
A conductor line layer made of chromium-copper-nickel-gold having a value of 7 (S / m) embedded in the dielectric substrate 1 so that its upper surface is flush with the surface of the dielectric substrate 1;
A high-frequency transmission line A of the present invention having the configuration shown in FIG. 1 was manufactured.
【0024】また、比較例として、上記と同じ誘電体基
板1の裏面に上記と同じグランド導体層2を被着形成
し、その表面に上記と同じ材料・形状・寸法の導体線路
3をその下面を誘電体基板1中に埋め込ませることなく
被着形成して、図3に示した構成の従来の高周波用伝送
線路Bを作製した。As a comparative example, the same ground conductor layer 2 is formed on the back surface of the same dielectric substrate 1 as above, and the conductor line 3 of the same material, shape and dimensions as above is formed on the lower surface thereof. Was formed without being embedded in the dielectric substrate 1 to produce a conventional high-frequency transmission line B having the configuration shown in FIG.
【0025】そして、これら高周波用伝送線路Aおよび
Bについて高周波信号の伝送特性をベクトルネットワー
クアナライザを用いて測定し、それぞれの伝送線路のS
パラメータ(Scattering Parameter:散乱パラメータ)
として反射係数S11ならびに透過係数S21の周波数特性
を求めた。これらの結果のうち、透過係数S21の周波数
特性を図3に示す。The transmission characteristics of the high-frequency signals are measured for these high-frequency transmission lines A and B using a vector network analyzer.
Parameter (Scattering Parameter)
, The frequency characteristics of the reflection coefficient S 11 and the transmission coefficient S 21 were obtained. Of these results, showing the frequency characteristics of the transmission coefficient S 21 in FIG. 3.
【0026】図3は透過係数S21の周波数特性を示す線
図であり、横軸は周波数f(GHz)を、縦軸は透過係
数S21(dB)を表わし、図中に実線で示した曲線Aは
本発明の高周波用伝送線路Aについての特性曲線を、破
線で示した曲線Bは比較例の高周波用伝送線路Bについ
ての特性曲線をそれぞれ示している。これらより分かる
ように、ほぼ20GHz付近の周波数を境として、低周波
領域においては両者はほぼ同等もしくは比較例の高周波
用伝送線路Bの方が損失が小さくて良好な特性を示して
いるが、高周波領域においては本発明の高周波用伝送線
路Aの方が損失が小さく(透過係数S21が大きく)て良
好な伝送特性を有している。FIG. 3 is a diagram showing the frequency characteristic of the transmission coefficient S 21 , wherein the horizontal axis represents the frequency f (GHz) and the vertical axis represents the transmission coefficient S 21 (dB), which is shown by a solid line in the figure. A curve A indicates a characteristic curve of the high-frequency transmission line A of the present invention, and a broken line curve B indicates a characteristic curve of the high-frequency transmission line B of the comparative example. As can be seen from these figures, in the low frequency region, the high-frequency transmission line B of the comparative example has a smaller loss and shows better characteristics in the low frequency region at a frequency of about 20 GHz. it is loss less of the high frequency transmission line a of the present invention Te (large transmission coefficient S 21) has good transmission characteristics in the region.
【0027】これにより、本発明の高周波用伝送線路
は、特に高周波領域において伝送損失の発生が抑制さ
れ、高周波信号の良好な伝送特性を有する高周波用伝送
線路となることが確認できた。As a result, it has been confirmed that the transmission line for high frequency of the present invention suppresses the occurrence of transmission loss especially in a high frequency region, and has a good transmission characteristic for high frequency signals.
【0028】なお、以上はあくまで本発明の実施の形態
の例示であって、本発明はこれらに限定されるものでは
なく、本発明の要旨を逸脱しない範囲で種々の変更や改
良を加えることは何ら差し支えない。It should be noted that the above is only an example of the embodiment of the present invention, and the present invention is not limited to the embodiment. Various changes and improvements may be made without departing from the gist of the present invention. No problem.
【0029】[0029]
【発明の効果】以上のように、本発明の高周波用伝送線
路によれば、裏面にグランド導体層を有する誘電体基板
の表面に、誘電体基板中に下面が埋め込まれ、上面が露
出している導体線路を設けた構造としたことから、誘電
体基板と接している側の導体線路の両端における誘電率
が大きく変化することがなくなって電界(電気力線)や
電流が集中する導体線路の下面をすべて同一の誘電率分
布中に存在させることができ、導体線路下面の両端への
電磁界分布の集中を緩和させることが可能となり、また
磁束密度の集中をも緩和させることが可能となって、導
体線路下面の両端への電流の集中を緩和させることがで
き、その結果、導体線路を伝搬する高周波信号の伝送損
失の発生を抑制することができた。As described above, according to the high-frequency transmission line of the present invention, the lower surface is embedded in the dielectric substrate and the upper surface is exposed on the surface of the dielectric substrate having the ground conductor layer on the back surface. The conductor line on the side where the dielectric substrate is in contact with the dielectric substrate, the dielectric constant at both ends of the conductor line does not change significantly, and the electric field (line of electric force) and current concentrate on the conductor line. All the lower surfaces can be in the same dielectric constant distribution, so that the concentration of the electromagnetic field distribution at both ends of the conductor line lower surface can be reduced, and the concentration of the magnetic flux density can also be reduced. As a result, the concentration of current at both ends of the lower surface of the conductor line can be reduced, and as a result, transmission loss of a high-frequency signal propagating through the conductor line can be suppressed.
【0030】また、本発明の高周波用伝送線路によれ
ば、下面が誘電体基板中に埋め込まれた導体線路の上面
を露出させていることから、パターン設計がしやすく、
従来のマイクロストリップ線路と同様に焼成等により製
造した後に調整が必要になった場合にもトリミング処理
による調整が容易であり、また、素子部品の実装が容易
であって、集積性もよく、電子部品の実装性が高い回路
基板を提供することができるものとなる。According to the high-frequency transmission line of the present invention, since the lower surface exposes the upper surface of the conductor line embedded in the dielectric substrate, the pattern can be easily designed.
In the case where adjustment is necessary after manufacturing by firing or the like as in the case of the conventional microstrip line, adjustment by trimming is easy, mounting of element parts is easy, integration is good, and electronic A circuit board with high component mountability can be provided.
【0031】以上により、本発明によれば、高周波用伝
送線路であるマイクロストリップ線路において、導体線
路の両端部への電界や電流の集中を緩和することにより
導体線路中を伝搬する高周波信号の伝送損失の発生を抑
制した、良好な伝送特性を有する高周波用伝送線路を提
供することができた。As described above, according to the present invention, in a microstrip line as a high-frequency transmission line, transmission of a high-frequency signal propagating in the conductor line is reduced by alleviating the concentration of electric field and current at both ends of the conductor line. A high-frequency transmission line with good transmission characteristics, in which loss is suppressed, can be provided.
【0032】本発明の高周波用伝送線路によれば、高周
波信号に対して伝送損失の小さい良好な伝送特性を有す
る伝送線路となることから高周波回路に好適な伝送線路
となり、例えば無線機器等の高周波回路部分の回路基板
における伝送線路として使用した場合には消費電力が少
なくて済むものとできる。According to the high-frequency transmission line of the present invention, since the transmission line has good transmission characteristics with a small transmission loss with respect to a high-frequency signal, the transmission line is suitable for a high-frequency circuit. When used as a transmission line in a circuit board of a circuit portion, power consumption can be reduced.
【図1】本発明の高周波用伝送線路の実施の形態の例を
示す斜視図である。FIG. 1 is a perspective view showing an example of an embodiment of a high-frequency transmission line according to the present invention.
【図2】本発明の高周波用伝送線路の実施の形態の他の
例を示す斜視図である。FIG. 2 is a perspective view showing another example of the embodiment of the high-frequency transmission line of the present invention.
【図3】高周波用伝送線路の透過係数の周波数特性を示
す線図である。FIG. 3 is a diagram illustrating a frequency characteristic of a transmission coefficient of a high-frequency transmission line.
【図4】従来の高周波用伝送線路を示す斜視図である。FIG. 4 is a perspective view showing a conventional high-frequency transmission line.
1・・・・・誘電体基板 2・・・・・グランド導体層 3・・・・・導体線路 1 ... Dielectric substrate 2 ... Ground conductor layer 3 ... Conductor line
Claims (1)
板の表面に、該誘電体基板中に下面が埋め込まれ、上面
が露出している導体線路を設けたことを特徴とする高周
波用伝送線路。1. A high-frequency transmission line characterized in that a conductor line whose lower surface is embedded in the dielectric substrate and whose upper surface is exposed is provided on the surface of a dielectric substrate having a ground conductor layer on the back surface. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8316475A JPH10163710A (en) | 1996-11-27 | 1996-11-27 | Transmission line for high frequency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8316475A JPH10163710A (en) | 1996-11-27 | 1996-11-27 | Transmission line for high frequency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10163710A true JPH10163710A (en) | 1998-06-19 |
Family
ID=18077518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8316475A Pending JPH10163710A (en) | 1996-11-27 | 1996-11-27 | Transmission line for high frequency |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10163710A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006134399A1 (en) * | 2005-06-15 | 2006-12-21 | Bae Systems Plc | Transmission line |
| JP2016529771A (en) * | 2013-06-24 | 2016-09-23 | レイセオン カンパニー | Imaging log periodic antenna with stepped balun and related techniques |
-
1996
- 1996-11-27 JP JP8316475A patent/JPH10163710A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006134399A1 (en) * | 2005-06-15 | 2006-12-21 | Bae Systems Plc | Transmission line |
| US7852175B2 (en) | 2005-06-15 | 2010-12-14 | BAE Sysytems PLC | Circuit board defined by transmission line patterns disposed within trenches and covered by a conformal layer |
| JP2016529771A (en) * | 2013-06-24 | 2016-09-23 | レイセオン カンパニー | Imaging log periodic antenna with stepped balun and related techniques |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0883328B1 (en) | Circuit board comprising a high frequency transmission line | |
| JP2003204209A (en) | High frequency wiring board | |
| JP2000232317A (en) | Dielectric resonator antenna | |
| US7345633B2 (en) | Low-loss substrate antenna structure and method of manufacture thereof | |
| JP3996879B2 (en) | Coupling structure of dielectric waveguide and microstrip line, and filter substrate having this coupling structure | |
| CN109860989A (en) | Circularly polarized slot antenna based on integrated substrate gap waveguide | |
| JP2003133814A (en) | High frequency wiring board | |
| JP4671458B2 (en) | Signal line to wave guide transformer | |
| JP2008160750A (en) | Microwave circuit board | |
| US6100774A (en) | High uniformity microstrip to modified-square-ax interconnect | |
| JP3347640B2 (en) | Transmission line for high frequency | |
| JPH10163710A (en) | Transmission line for high frequency | |
| JP3619396B2 (en) | High frequency wiring board and connection structure | |
| CN209880807U (en) | SIGW circular polarized antenna | |
| JP3638479B2 (en) | High frequency wiring board and connection structure thereof | |
| US7180009B2 (en) | Transmission line with stripped semi-rigid cable | |
| JP3619398B2 (en) | High frequency wiring board and connection structure | |
| JP3158031B2 (en) | Microstrip line coupling structure | |
| JP3181036B2 (en) | Mounting structure of high frequency package | |
| JP3619397B2 (en) | High frequency wiring board and connection structure | |
| JP3046287B1 (en) | Connection terminal structure | |
| JP2005286484A (en) | Microstrip antenna | |
| US6573807B2 (en) | High-power directional coupler and method for fabricating | |
| JP4799238B2 (en) | Aperture antenna | |
| JP2001358530A (en) | Circular polarization microstrip antenna |