JPH10163792A - Structure of dual mode SAW filter - Google Patents

Structure of dual mode SAW filter

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Publication number
JPH10163792A
JPH10163792A JP33758696A JP33758696A JPH10163792A JP H10163792 A JPH10163792 A JP H10163792A JP 33758696 A JP33758696 A JP 33758696A JP 33758696 A JP33758696 A JP 33758696A JP H10163792 A JPH10163792 A JP H10163792A
Authority
JP
Japan
Prior art keywords
center
idt
electrode finger
electrode
primary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP33758696A
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Japanese (ja)
Other versions
JP3724901B2 (en
Inventor
Kunihito Yamanaka
国人 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
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Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP33758696A priority Critical patent/JP3724901B2/en
Publication of JPH10163792A publication Critical patent/JPH10163792A/en
Application granted granted Critical
Publication of JP3724901B2 publication Critical patent/JP3724901B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To improve attenuation inclination by setting the adjacent inter- electrode finger intervals between IDT on both sides of a primary-tertiary DMS filter and IDT at the center to be within a specified range. SOLUTION: Primary-tertiary modes along the direction of a surface wave are excited by providing three IDT2, IDT3 and IDT4 on the main face of a piezoelectric substrate 1 and reflectors 5 and 5 on both sides so as to constitute the primary-tertiary DMS filter using the two modes. When the center interval G1 of the adjacent electrode fingers of IDT2 and IDT3 by sandwiching the electrode finger 3a whose width is λ/2 is set to be G1=5/4 and the center interval of the adjacent electrode fingers of IDT2 and IDT4 by sandwiching the electrode finger 4a is set to be G2, G2 is set to be (0.84+n)λ<G2((1.0+n)λ. Thus, they are asymmetrically constituted with the center shaft of center IDT as a reference. Consequently, attenuation inclination can be improved.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は共振子型の弾性表面
波フィルタ(以下SAWフィルタと称す)に関し、特に
減衰傾度を急峻にした1−3次縦結合二重モードSAW
フィルタに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resonator type surface acoustic wave filter (hereinafter referred to as "SAW filter"), and more particularly to a 1-3 order longitudinally coupled double mode SAW having a steep attenuation gradient.
Regarding filters.

【0002】[0002]

【従来の技術】近年、SAWフィルタは小型化、高周波
化、量産性等に優れているため、携帯電話をはじめとす
る無線機に多く利用されている。特に最近のPHS、コ
ードレス電話等では第一IFフィルタの高周波化と広帯
域化が要求され、この要件を満たすデバイスとしてはS
AWフィルタが最適である。共振子型SAWフィルタの
広帯域化を図る手段として1次と3次のモードを利用し
た1次−3次縦結合二重モードSAWフィルタ(以下、
1次−3次DMSフィルタと称す)が用いられている。
図5(a)はその一例を示す模式的平面図で、矩形状の
圧電性基板1の主面上に表面波の伝搬方向に沿って3個
のインターディジタルトランスジューサ(以下IDTと
称す)12、13、14を配置し、その両側にグレーテ
ィング型の反射器15、15を配置する。 IDT12
〜14はそれぞれ互いに間挿し合う複数本の電極指を有
する一対のくし形電極により構成されている。IDT1
2〜14の一方のくし型電極はアース電位端子に接続さ
れ、他方のくし形電極は入力端子または出力端子に電気
的に接続されている。
2. Description of the Related Art In recent years, SAW filters have been widely used in wireless devices such as mobile phones, because of their excellent miniaturization, high frequency, mass productivity, and the like. Particularly in recent PHS, cordless telephones, etc., the first IF filter is required to have a higher frequency and a wider band.
An AW filter is optimal. As a means for widening the bandwidth of a resonator type SAW filter, a first-order / third-order longitudinally-coupled dual-mode SAW filter (hereinafter, referred to as “first-order / third-order”) mode using a first-order mode and a third-order mode
1st-3rd order DMS filters).
FIG. 5 (a) is a schematic plan view showing one example of this, in which three interdigital transducers (hereinafter referred to as IDTs) 12 are arranged on the main surface of a rectangular piezoelectric substrate 1 along the propagation direction of surface waves. 13 and 14 are arranged, and grating-type reflectors 15 and 15 are arranged on both sides thereof. IDT12
14 to 14 are constituted by a pair of comb-shaped electrodes each having a plurality of electrode fingers interposed therebetween. IDT1
One of the comb electrodes 2 to 14 is connected to a ground potential terminal, and the other comb electrode is electrically connected to an input terminal or an output terminal.

【0003】図5(a)に示す各IDTは所謂正規型I
DTであり、各電極指幅及び電極指間のスペースは所望
の中心周波数の波長λの1/4に設定するのが一般的で
ある。1次−3次DMSフィルタの広帯域化について
は、信学誌論文A、Vol.J76-ANo.2 p227「900MHz
帯広帯域2重モードSAWフィルタ」の図5、6に説明
してあるように、入出力IDT間の間隔Lを変えること
によって帯域幅を連続的に変化させることができ、最大
の帯域幅が得られるのはL=λ/4の場合であると記述
されている。一般的には相隣るIDTの端部の電極指1
7、18の中心間間隔Lを図5(b)に示すようにLと
定義するが、前記文献に従ってこのLをλ/4に設定す
ると、通常、電極指17、18の幅は上述したようにλ
/4であるため、相隣る電極指17、18同士は接触す
ることになる。そこで、図5(c)に示すように電極指
17、18を一体とし電極指16とする。従って、該電
極指16の電極指幅はλ/2となる。本明細書では最大
の帯域幅が得られる電極パターンを記述するときに電極
指の中心間間隔Lをλ/4と表現するのではなく、図5
(c)に示すように電極指16を挟んで隣接する電極指
の中心間間隔をとり、5/4λと記述することとした。
[0005] Each IDT shown in FIG.
DT, and the width of each electrode finger and the space between the electrode fingers are generally set to 波長 of the wavelength λ of a desired center frequency. Regarding the broadening of the first- and third-order DMS filters, see IEICE Transactions A, Vol.J76-ANo.2, p.
As described in FIGS. 5 and 6 under “Band-Bandwidth Dual-Mode SAW Filter”, the bandwidth can be continuously changed by changing the interval L between the input and output IDTs, and the maximum bandwidth can be obtained. Is described as being the case when L = λ / 4. Generally, an electrode finger 1 at the end of an adjacent IDT
The center-to-center distance L between the electrodes 7 and 18 is defined as L as shown in FIG. 5 (b). When this L is set to λ / 4 according to the above-mentioned document, the width of the electrode fingers 17 and 18 usually becomes To λ
Therefore, the adjacent electrode fingers 17 and 18 come into contact with each other. Therefore, as shown in FIG. 5C, the electrode fingers 17 and 18 are integrated to form the electrode finger 16. Therefore, the electrode finger width of the electrode finger 16 is λ / 2. In this specification, when describing an electrode pattern that provides the maximum bandwidth, the center distance L between the electrode fingers is not expressed as λ / 4, but as shown in FIG.
As shown in (c), the center-to-center spacing between the adjacent electrode fingers with the electrode finger 16 interposed therebetween is taken and described as 5 / 4λ.

【0004】図5に示す反射器15、15はIDT1
2、14からの漏洩表面波を反射する機能を有し、ID
T12〜14で励起される弾性表面波のエネルギーを反
射器15、15間に閉じ込めることにより、1次モード
と3次モードのQ値を高める作用をする。このとき、2
次モードも当然励起されるが、該モードの変位分布は表
面波の伝搬方向にIDT12の中心に対し反対称に分布
するため、発生電荷も同様にIDT12の中心に対し異
符号の電荷が発生し、入出力IDT間で相殺されて実質
上励起されないのに等しく1次モードと3次モードのみ
を利用することが可能となる。また、通過域のカットオ
フ特性を改善し、帯域外の減衰量を増大する手段として
図6に示すように1次−3次DMSフィルタを二段縦続
接続構成とすることも一般的に行われている。図7の濾
波特性は図6に示した電極構成の二段縦続接続型DMS
フィルタの一例であり、圧電基板に36°Y−X Li
TaO3を用い、周波数F0=110.592MHz、
通過帯域幅B=2MHz、中央IDTを66.5対、
G1、G2を5/4λ、IDT3、4をそれぞれ33.
5対、反射器各30本とした場合の濾波特性である。
The reflectors 15, 15 shown in FIG.
It has the function of reflecting the leaky surface waves from 2, 14
By confining the energy of the surface acoustic wave excited at T12 to T14 between the reflectors 15, 15, the Q value of the primary mode and the tertiary mode is increased. At this time, 2
The next mode is naturally excited, but since the displacement distribution of the mode is distributed antisymmetrically with respect to the center of the IDT 12 in the propagation direction of the surface wave, the generated charge similarly has a different sign with respect to the center of the IDT 12. , And the input and output IDTs are canceled out and substantially not excited, so that only the first mode and the third mode can be used. As a means for improving the cut-off characteristic of the pass band and increasing the amount of attenuation outside the band, it is also generally practiced to use a two-stage cascaded primary-tertiary DMS filter as shown in FIG. ing. The filtering characteristic of FIG. 7 is the two-stage cascade connection type DMS having the electrode configuration shown in FIG.
This is an example of a filter in which a 36 ° YX Li
Using TaO3, frequency F 0 = 110.592 MHz,
Pass bandwidth B = 2 MHz, central IDT 66.5 pairs,
G1 and G2 are 5 / 4λ, and IDTs 3 and 4 are each 33.33.
It is a filtering characteristic when 5 pairs and 30 reflectors are used.

【0005】また、特開平8−191229号には縦結
合二重モードSAWフィルタにおいて、高域側減衰帯に
現れるスプリアスを抑圧し高域側近傍の減衰量を改善す
る手段が開示されている。図8(a)に電極パターンを
示すが、1次モードと3次モードを用いた縦結合二重モ
ードSAWフィルタおいて、中央の入力IDT22と両
側の出力IDT23との対面する最内側電極指の中心間
間隔をL1,L2とするとき、一方をL1=nλ/2と
し、他方をL2=(2n−1)λ/4(n=1、2、3
・・)と構成する場合が、通過域近傍の高域側減衰量の
大きなフィルタを実現できると記述している。図8
(b)はそのときの濾波特性を示す図である。
Japanese Patent Application Laid-Open No. Hei 8-191229 discloses a means for suppressing a spurious appearing in a high-frequency attenuation band and improving an attenuation near a high frequency side in a longitudinally coupled dual mode SAW filter. FIG. 8A shows an electrode pattern. In a longitudinally coupled dual mode SAW filter using a first-order mode and a third-order mode, an innermost electrode finger facing a central input IDT 22 and output IDTs 23 on both sides is used. When the center-to-center spacings are L1 and L2, one is L1 = nλ / 2, and the other is L2 = (2n−1) λ / 4 (n = 1, 2, 3
..) describes that a filter having a large amount of high-frequency attenuation near the passband can be realized. FIG.
(B) is a diagram showing the filtering characteristics at that time.

【0006】[0006]

【発明が解決しようとする課題】しかしながら上述の図
5(c)に示したように1つおいて隣接する電極指間の
間隔を5/4λとし帯域幅が最大となるIDTパターン
においては、3dB帯域幅(B3)対30dB帯域幅
(B30)の比B30/B3、即ち減衰傾度が通過域の
高周波側に生ずるスプリアスにより劣化し、PHS、コ
ードレス電話の要求条件に満たないという問題があっ
た。これは図7から得られる減衰傾度即ち、B30/B
3が高周波側のスプリアスにより劣化していることから
も理解されよう。また、上述の図8に示したように中央
IDTと両側IDTとの対面する最内側電極指の中心間
間隔を概ね一方をL1=nλ/2、他方をL2=(2n
−1)λ/4とした1次―3次DMSフィルタにおいて
も減衰傾度は要求条件に対し余裕がないため製造上のバ
ラツキにより要求を満たすことができない場面がしばし
ば発生し歩留まりが向上しないという問題があった。本
発明は上記問題を解決するためになされたものであっ
て、急峻な減衰傾度を有する1次−3次DMSフィルタ
を提供することを目的とする。同図から明らかなように
減衰傾度即ち、3dB帯域幅(B3)対30dB帯域幅
(B30)の比が高周波側のスプリアスにより劣化して
いることが分かる。
However, as shown in FIG. 5 (c), in an IDT pattern in which the interval between adjacent electrode fingers is set to 5 / 4λ and the bandwidth is maximized, 3 dB is used. There is a problem that the ratio B30 / B3 of the bandwidth (B3) to the 30 dB bandwidth (B30), that is, the attenuation gradient is degraded by spurious components generated on the high frequency side of the passband, and does not satisfy the requirements for PHS and cordless telephones. This is the attenuation slope obtained from FIG.
It can also be understood from the fact that No. 3 is deteriorated by spurious components on the high frequency side. Also, as shown in FIG. 8 described above, the center-to-center spacing of the innermost electrode fingers facing the center IDT and both-side IDTs is approximately L1 = nλ / 2 for one, and L2 = (2n
-1) Even in a first-order / third-order DMS filter with λ / 4, there is often no situation where the requirements cannot be satisfied due to manufacturing variations because the attenuation gradient has no margin for the required conditions, and the yield is not improved. was there. The present invention has been made to solve the above problem, and has as its object to provide a first-order to third-order DMS filter having a steep attenuation gradient. As can be seen from the figure, the attenuation gradient, that is, the ratio of the 3 dB bandwidth (B3) to the 30 dB bandwidth (B30) is deteriorated by spurious components on the high frequency side.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するため
に本発明の請求項1記載の発明は、圧電基板上に3個の
IDTとその両側に反射器を表面波の伝搬方向に配置し
て構成する1次−3次縦結合二重モードSAWフィルタ
において、中央のIDTと隣接する一方のIDTとの電
極指の中心間間隔G1を5λ/4とした場合、他方のI
DTとの電極指の中心間間隔G2を(0.84+n)λ
<G2<(1.0+n)λとしたことにより中央IDT
の中心軸を基準として非対称に構成したこと特徴とする
二重モードSAWフィルタである。
According to a first aspect of the present invention, there is provided an IDT comprising three IDTs on a piezoelectric substrate and reflectors on both sides of the IDTs in the direction of propagation of the surface acoustic wave. In the primary-tertiary-order longitudinally coupled dual-mode SAW filter constructed as described above, when the center distance G1 between the electrode fingers of the center IDT and one of the adjacent IDTs is 5λ / 4, the other IT
The distance G2 between the center of the electrode finger and DT is (0.84 + n) λ
<G2 <(1.0 + n) λ, the central IDT
A double mode SAW filter characterized by being asymmetrically configured with respect to a central axis of the filter.

【0008】[0008]

【発明の実施の形態】以下本発明を図面に示した実施の
形態に基づいて詳細に説明する。図1(a)は本発明に
係る二重モードSAWフィルタの一実施例を示す模式的
電極パターンであって、圧電基板1の主面上に3個のI
DT2、3、4と、その両側に反射器5、5を表面波の
伝搬方向に沿って配設することにより、表面波の方向に
沿った1次と3次のモードを励起し、該2つのモードを
利用した1次−3次DMSフィルタを構成する。図1
(b)は同図(a)のIDT部の拡大図を示す図であっ
て、幅がλ/2の電極指3aを挟んでIDT2と3との
隣接する電極指の中心間間隔G1をG1=5/4λと
し、電極指4aを挟んでIDT2と4の隣接する電極指
の中心間間隔をG2とする。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on an embodiment shown in the drawings. FIG. 1A is a schematic electrode pattern showing one embodiment of a dual mode SAW filter according to the present invention.
By disposing the reflectors 5, 5 on both sides of the DTs 2, 3, and 4 along the propagation direction of the surface wave, the first and third modes along the direction of the surface wave are excited. A first-third-order DMS filter using two modes is configured. FIG.
(B) is an enlarged view of the IDT portion of (a) of the same figure, and the distance G1 between the centers of the adjacent electrode fingers between IDT2 and IDT3 across the electrode finger 3a having a width of λ / 2 is represented by G1. = 5 / 4λ, and the distance between the centers of the adjacent electrode fingers of the IDTs 2 and 4 across the electrode finger 4a is G2.

【0009】図2は図1(b)に示したように電極指中
心間間隔G1を一定値5/4λとし、電極指中心間間隔
G2をパラメータとして1次−3次DMSフィルタの減
衰傾度S30(=B30/B3)をシュミレーションに
よって求めた結果の一例である。この図から明らかなよ
うに減衰傾度は電極指中心間間隔G2に対し複雑な変化
をしながら周期性を示すことがわかる。特開平8−19
1229号において開示された最内側の電極指中心間間
隔L2=λ/4は本明細書の記述ではG1=5λ/4に
相当し、L1=λ/2はG2=λに相当し、図2中に矢
印で示してある。前記公開公報に開示されたG2=λの
値(L1=λ/2)より減衰傾度が改善されるG2の値
が存在する。即ち、 G2の値が(0.84+n)λ〜
(1+n)λの範囲で、破線Bより減衰傾度S30の値
が小さくなることが図2より明らかである。また、図3
はG2をパラメータとしたときの減衰傾度S40(=B
40/B3)の変化を示す図であり、S30の場合とほ
ぼ同様の傾向を呈する。
FIG. 2 shows the attenuation gradient S30 of the first-order / third-order DMS filter using the electrode finger center distance G1 as a parameter and the electrode finger center distance G2 as a parameter, as shown in FIG. (= B30 / B3) is an example of a result obtained by simulation. As is clear from this figure, the attenuation gradient shows periodicity while changing in a complicated manner with respect to the electrode finger center distance G2. JP-A-8-19
The innermost electrode finger center distance L2 = λ / 4 disclosed in Japanese Patent No. 1229 corresponds to G1 = 5λ / 4 in the description of the present specification, and L1 = λ / 2 corresponds to G2 = λ. Shown by arrows inside. There is a G2 value at which the attenuation gradient is improved from the G2 = λ value (L1 = λ / 2) disclosed in the above-mentioned publication. That is, the value of G2 is (0.84 + n) λ ~
It is clear from FIG. 2 that the value of the attenuation gradient S30 is smaller than the broken line B in the range of (1 + n) λ. FIG.
Represents the attenuation gradient S40 (= B
40 / B3) is a diagram showing a change, and shows almost the same tendency as in the case of S30.

【0010】図4は圧電基板に36°Y−X LiTa
O3を用い、周波数F0=110.592MHz、通過
帯域幅B=2MHz、中央IDTを42.5対、 G1
=5/4λ、G2=9/10λ、IDT3、4をそれぞ
れ23.5対、反射器各30本とした場合の濾波特性で
ある。従来の設計に基づいた図8(b)の濾波特性と中
心周波数、帯域幅、電極対数、反射器本数等異なるが、
両濾波特性の減衰傾度比べると上記シュミレーション結
果が示すように減衰傾度が改善されていることが分か
る。
FIG. 4 shows that a 36 ° YX LiTa piezoelectric substrate is used.
Using O3, frequency F 0 = 110.592 MHz, pass bandwidth B = 2 MHz, central IDT 42.5 pairs, G1
= 5/4 [lambda], G2 = 9/10 [lambda], 23.5 pairs of IDTs 3 and 4, and 30 reflectors each. Although the filtering characteristics of FIG. 8B based on the conventional design are different from the center frequency, the bandwidth, the number of electrode pairs, the number of reflectors,
Comparing the attenuation gradients of the two filtering characteristics, it can be seen that the attenuation gradient is improved as shown in the above simulation results.

【0011】上記では圧電基板にLiTaO3を用いた
場合を説明したが、本発明は他の圧電物質、例えば水
晶、LiNbO3、LBO等に適用できることは言うま
でもない。
Although the case where LiTaO3 is used for the piezoelectric substrate has been described above, it is needless to say that the present invention can be applied to other piezoelectric materials, such as quartz, LiNbO3, and LBO.

【0012】[0012]

【発明の効果】本発明は、以上説明したように構成した
ので、1次−3次DMSフィルタの両側のIDTのと中
央のIDTの隣接する電極指間間隔を上述のように設定
することにより減衰傾度を改善することが可能であり携
帯電話等に用いる場合に優れた効果を奏する。
Since the present invention is constructed as described above, the distance between the adjacent electrode fingers of the IDT on both sides of the first-order and third-order DMS filters and the center IDT is set as described above. It is possible to improve the damping gradient, which is excellent when used in a mobile phone or the like.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)は本発明に係る1次−3次DMSフィル
タの電極パターンの実施の一形態例を示す図、(b)は
そのIDTの拡大図である。
FIG. 1A is a diagram showing an embodiment of an electrode pattern of a primary-tertiary DMS filter according to the present invention, and FIG. 1B is an enlarged view of an IDT thereof.

【図2】電極指中心間間隔G2と減衰傾度S30との関
連を示す図である。
FIG. 2 is a diagram showing a relationship between an electrode finger center distance G2 and an attenuation gradient S30.

【図3】電極指中心間間隔G2と減衰傾度S40との関
連を示す図である。
FIG. 3 is a diagram showing a relationship between an electrode finger center distance G2 and a damping gradient S40.

【図4】本発明になるIDTパターンを用いた濾波特性
図である。
FIG. 4 is a diagram illustrating filtering characteristics using an IDT pattern according to the present invention.

【図5】(a)は従来の1次−3次DMSフィルタの電
極パターンを示す図、(b)、(c)はその拡大図であ
る。
FIG. 5A is a diagram showing an electrode pattern of a conventional primary-tertiary DMS filter, and FIGS. 5B and 5C are enlarged views thereof.

【図6】従来の1次−3次DMSフィルタの2段縦続接
続DMSフィルタである。
FIG. 6 is a two-stage cascaded DMS filter of a conventional primary-tertiary DMS filter.

【図7】図6の構成の濾波特性図である。FIG. 7 is a diagram showing filtering characteristics of the configuration of FIG. 6;

【図8】(a)は特開平8−191229号の電極パタ
ーン図、(b)はその濾波特性図である。
FIG. 8A is an electrode pattern diagram of JP-A-8-191229, and FIG. 8B is a diagram of its filtering characteristics.

【符号の説明】[Explanation of symbols]

1・・圧電基板 2、 3、4・・IDT 3a、4a・・電極指 5・・反射器 G1、G2・・電極指中心間間隔 S30、S40・・減衰傾度 1. Piezoelectric substrate 2, 3, 4 ... IDT 3a, 4a ... Electrode finger 5: Reflector G1, G2 ... Electrode finger center spacing S30, S40 ... Decay slope

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 圧電基板上に3個のIDTとその両側に
反射器を表面波の伝搬方向に配置して構成する1次−3
次縦結合二重モードSAWフィルタにおいて、中央のI
DTと隣接する一方のIDTとの電極指の中心間間隔G
1を5λ/4とした場合、他方のIDTとの電極指の中
心間間隔G2を(0.84+n)λ<G2<(1.0+
n)λとしたことにより中央IDTの中心軸を基準とし
て左右非対称に構成したこと特徴とする二重モードSA
Wフィルタの構造。
1. A primary-third arrangement comprising three IDTs arranged on a piezoelectric substrate and reflectors arranged on both sides thereof in the direction of propagation of surface waves.
In the next-order longitudinally-coupled dual-mode SAW filter, the center I
The distance G between the centers of the electrode fingers between DT and one of the adjacent IDTs
When 1 is set to 5λ / 4, the distance G2 between the center of the electrode finger and the other IDT is set to (0.84 + n) λ <G2 <(1.0+
n) The dual mode SA is characterized in that it is asymmetrical with respect to the center axis of the central IDT by using λ.
Structure of W filter.
JP33758696A 1996-12-02 1996-12-02 Structure of dual mode SAW filter Expired - Fee Related JP3724901B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33758696A JP3724901B2 (en) 1996-12-02 1996-12-02 Structure of dual mode SAW filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33758696A JP3724901B2 (en) 1996-12-02 1996-12-02 Structure of dual mode SAW filter

Publications (2)

Publication Number Publication Date
JPH10163792A true JPH10163792A (en) 1998-06-19
JP3724901B2 JP3724901B2 (en) 2005-12-07

Family

ID=18310049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33758696A Expired - Fee Related JP3724901B2 (en) 1996-12-02 1996-12-02 Structure of dual mode SAW filter

Country Status (1)

Country Link
JP (1) JP3724901B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828879B2 (en) * 2001-02-16 2004-12-07 Sanyo Electric Co., Ltd. Longitudinal coupled multiple mode surface acoustic wave filter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828879B2 (en) * 2001-02-16 2004-12-07 Sanyo Electric Co., Ltd. Longitudinal coupled multiple mode surface acoustic wave filter

Also Published As

Publication number Publication date
JP3724901B2 (en) 2005-12-07

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