JPH10170355A - High sensitivity stress detector - Google Patents
High sensitivity stress detectorInfo
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- JPH10170355A JPH10170355A JP8326360A JP32636096A JPH10170355A JP H10170355 A JPH10170355 A JP H10170355A JP 8326360 A JP8326360 A JP 8326360A JP 32636096 A JP32636096 A JP 32636096A JP H10170355 A JPH10170355 A JP H10170355A
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- amorphous
- stress
- sensitivity
- magnetic material
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、応力を検出する高
感度のマイクロセンサや応力で動作する計測、制御用の
高感度応力検出素子（高感度応力検出装置）に関する。
詳しくは、工業用ロボットの触覚センサをはじめ、工業
計測用、家電用、科学計測用、オートメーション用など
の張力センサ、圧力センサ、トルクセンサ、歪みゲー
ジ、ノックセンサ、タッチセンサ、霜センサ、地震セン
サ、重力センサ、音響センサ、流量センサ、風速セン
サ、ロードセルなどの広範囲のマイクロ応力センサやマ
イクロ応力スイッチに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-sensitivity microsensor for detecting stress, and a high-sensitivity stress detecting element (high-sensitivity stress detecting device) for measurement and control operated by stress.
For details, including tactile sensors for industrial robots, tension sensors, pressure sensors, torque sensors, strain gauges, knock sensors, touch sensors, frost sensors, earthquake sensors for industrial measurement, home appliances, scientific measurement, automation, etc. The present invention relates to a wide range of micro-stress sensors and micro-stress switches such as gravity sensors, acoustic sensors, flow sensors, wind speed sensors, and load cells.
【０００２】[0002]
【従来の技術】工業用ロボットや自動車・交通システ
ム、メカトロニクス、パワーエレクトロニクス、工場自
動化システム、家電機器、コンピュータ・情報・オフィ
スオートメーション機器、医療福祉機器、防災・環境計
測システムなど、社会のあらゆる分野における情報化・
知能化・自動化システムをさらに高度化するためには、
種々の高性能のマイクロ力学量センサやマイクロ力学量
スイッチデバイスが必要である。2. Description of the Related Art Industrial robots, automobile and transportation systems, mechatronics, power electronics, factory automation systems, home appliances, computers, information and office automation equipment, medical and welfare equipment, disaster prevention and environmental measurement systems, etc. Informatization·
In order to further enhance intelligent and automated systems,
A variety of high-performance micro-mechanical sensors and micro-mechanical switch devices are required.
【０００３】力学量は、変位・距離、回転角、速度、加
速度、振動などの物体の移動に伴う量や、張力、圧縮力
・圧力、回転力（トルク）、衝撃力などの応力に伴う量
であり、磁性体、半導体、誘電体などの材料を用いた種
々の力学量センサが使用されている。この中で、コイル
や磁性体を用いた力学量センサは、磁力線（磁界）を媒
介とした非接触センシングや放射線、比較的高温の環境
下でも安定に動作する高信頼性などの特徴を有するた
め、ロータリエンコーダ、自動車の速度センサ、加速度
センサ、方位センサ、差動変圧器形変位センサ、ソレノ
イド形変位センサ・圧力センサ、磁気スケール、リード
スイッチなどの耐環境性に優れたメカトロニクス用や工
業計測制御用のセンサやスイッチとして広範に使用され
ている。また、磁気式トルクセンサも種々開発されてい
る。A dynamic quantity is an amount associated with the movement of an object, such as displacement / distance, rotation angle, speed, acceleration, and vibration, and an amount associated with a stress such as tension, compression / pressure, rotation (torque), or impact. Various physical quantity sensors using materials such as magnetic materials, semiconductors, and dielectrics are used. Among them, the dynamic quantity sensor using a coil or a magnetic material has features such as non-contact sensing using magnetic field lines (magnetic field), radiation, and high reliability that operates stably even in a relatively high temperature environment. , Rotary encoder, automotive speed sensor, acceleration sensor, direction sensor, differential transformer type displacement sensor, solenoid type displacement sensor / pressure sensor, magnetic scale, reed switch, etc. Widely used as sensors and switches for Various magnetic torque sensors have also been developed.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、これら
の従来の磁気式力学量センサやスイッチなどは、一般に
磁芯と多数回巻きコイルを有すること、およびコイル励
磁では磁芯内の反磁界のため、半導体や誘電体を用いた
センサに比してマイクロ寸法化が困難であった。本願発
明者は、既に磁気−インピーダンス効果素子（ＭＩ素
子）を提案している（例えば、特開平７−１８１２３９
号公報参照）。However, these conventional magnetic dynamic quantity sensors and switches generally have a magnetic core and a multi-turn coil, and the coil excitation has a demagnetizing field in the magnetic core. Micro-dimensioning is more difficult than sensors using semiconductors and dielectrics. The present inventor has already proposed a magneto-impedance effect element (MI element) (for example, see Japanese Unexamined Patent Publication No. 7-181239).
Reference).
【０００５】このＭＩ効果は、アモルファスワイヤなど
の高透磁率磁性体に高周波電流やパルス電流を通電して
表皮効果を生じさせた状態で、外部磁界により磁性体の
インピーダンスを敏感に変化させるようにしたものであ
る。このＭＩ効果では、磁性体内部に反磁界がほとんど
発生しないので、フラックスゲートセンサと異なり、磁
性体の長さを１ｍｍ以下に短縮しても、磁界検出感度が
劣化せず、マイクロ寸法の高感度・高速応答の磁界セン
サが構成できる。The MI effect is such that the impedance of a magnetic material is sensitively changed by an external magnetic field in a state where a high frequency current or a pulse current is applied to a high magnetic permeability magnetic material such as an amorphous wire to generate a skin effect. It was done. In the MI effect, since a demagnetizing field is hardly generated inside the magnetic material, unlike a flux gate sensor, even if the length of the magnetic material is reduced to 1 mm or less, the magnetic field detection sensitivity does not deteriorate, and a micro-sized high sensitivity is obtained. -A high-speed response magnetic field sensor can be configured.
【０００６】本発明は、ＭＩ効果では磁性体ヘッドのイ
ンピーダンスの大きさが励磁角周波数ωと通電電流と直
角方向の透磁率μとの積の平方根√ωμに比例し、透磁
率μが外部磁界によって変化することを見い出した。こ
の原理をさらに展開し、磁性体として磁歪材を用いて応
力−磁気効果により透磁率μを応力σによって変化させ
れば、高感度のマイクロ応力センサが構成できることを
直感した。According to the present invention, in the MI effect, the magnitude of the impedance of the magnetic head is proportional to the square root Δωμ of the product of the excitation angular frequency ω, the energizing current and the magnetic permeability μ in the perpendicular direction, and the magnetic permeability μ is determined by the external magnetic field. It changes with it. By further developing this principle, I intuitively realized that a high-sensitivity micro stress sensor can be configured by changing the magnetic permeability μ by the stress σ by a stress-magnetic effect using a magnetostrictive material as a magnetic material.
【０００７】そこで、強靱弾性体であるアモルファス磁
歪ワイヤを用いて実験を行い、予測通りのゲージ率が２
００〜１３００に達する優れた結果を得たものである。
この場合、アモルファスワイヤに比較的強い応力を印加
してアニールを施し、異方性エネルギーを高めれば、地
磁気程度の外乱磁界によって透磁率μが変化することな
く、応力のみをインピーダンスの変化として検出するロ
バスト性が実現される。Therefore, an experiment was conducted using an amorphous magnetostrictive wire which is a tough elastic body, and the gauge factor as predicted was 2%.
Excellent results reaching from 00 to 1300 were obtained.
In this case, if the amorphous wire is annealed by applying a relatively strong stress to increase the anisotropic energy, only the stress is detected as a change in impedance without a change in the magnetic permeability μ due to a disturbance magnetic field of the terrestrial magnetism. Robustness is realized.
【０００８】また、既に、特開平８−１２８９０４号公
報において、同様にアモルファスワイヤによって応力の
検出ができることが実施例に示されているが、そのゲー
ジ率は６３程度であり、従来の半導体ストレンゲージの
ゲージ率約２００より低く、１／３程度であり、高感度
応力測定法とは言い難い。本発明は、従来の磁性体セン
サと異なる新原理によって、力学量センサヘッドのマイ
クロ化および高感度・高速応答化を実現することができ
る高感度応力検出装置を提供することを目的とする。Japanese Patent Application Laid-Open No. HEI 8-128904 already discloses in an embodiment that stress can be detected by using an amorphous wire. However, the gauge factor is about 63, and a conventional semiconductor strain gauge is used. Is less than about 200 and about 1/3, which is hardly a high-sensitivity stress measurement method. SUMMARY OF THE INVENTION It is an object of the present invention to provide a high-sensitivity stress detection device capable of realizing a micro-quantity and high-sensitivity and high-speed response of a physical quantity sensor head by a new principle different from a conventional magnetic sensor.
【０００９】本発明は、上記問題点を除去し、力学量セ
ンサヘッドのマイクロ化および高感度・高速応答化を実
現することができる、つまり、ゲージ率が高く、応力に
対して敏感に反応することができる高感度応力検出装置
を提供することを目的とする。The present invention eliminates the above-mentioned problems and realizes a micro-quantity and high-sensitivity and high-speed response of a physical quantity sensor head. That is, the present invention has a high gauge factor and is sensitive to stress. It is an object of the present invention to provide a high-sensitivity stress detection device capable of performing the above.
【００１０】[0010]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 〔１〕高感度応力検出装置であって、磁性体に交流電流
を通電した状態で、応力に対して、前記磁性体のインピ
ーダンスを変化させ、ゲージ率を３００以上としたもの
である。In order to achieve the above object, the present invention provides: [1] a high-sensitivity stress detection apparatus, which is capable of detecting a stress when an alternating current is applied to a magnetic body; The gauge factor is set to 300 or more by changing the impedance of the magnetic material.
【００１１】〔２〕上記〔１〕記載の高感度応力検出装
置において、前記交流電流として、高周波電流またはパ
ルス電流を用いるようにしたものである。 〔３〕上記〔１〕記載の高感度応力検出装置において、
前記応力は張力や圧縮力、トルクまたは衝撃力である。 〔４〕上記〔１〕記載の高感度応力検出装置において、
前記磁性体として、アモルファス磁性体を用いるように
したものである。[2] The high-sensitivity stress detecting device according to [1], wherein a high-frequency current or a pulse current is used as the AC current. [3] In the high-sensitivity stress detector according to the above [1],
The stress is tension, compression, torque or impact. [4] In the high-sensitivity stress detection device according to the above [1],
An amorphous magnetic material is used as the magnetic material.
【００１２】〔５〕上記〔４〕記載の高感度応力検出装
置において、前記磁性体として、負の磁歪をもつアモル
ファス磁性体を用いるようにしたものである。 〔６〕上記〔４〕記載の高感度応力検出装置において、
前記磁性体として、応力下加熱・冷却処理を施したアモ
ルファス磁性体を用いるようにしたものである。[5] The high-sensitivity stress detecting device according to the above [4], wherein an amorphous magnetic material having negative magnetostriction is used as the magnetic material. [6] In the high-sensitivity stress detection device according to the above [4],
As the magnetic material, an amorphous magnetic material subjected to a heating / cooling process under stress is used.
【００１３】〔７〕上記〔４〕記載の高感度応力検出装
置において、前記アモルファス磁性体として、アモルフ
ァス磁歪リボン、アモルファススパッタ磁歪厚膜、又は
アモルファスメッキ磁歪膜を用いるようにしたものであ
る。 〔８〕上記〔４〕記載の高感度応力検出装置において、
前記アモルファス磁性体として、アモルファスワイヤを
用いるようにしたものである。[7] The high-sensitivity stress detecting device according to the above [4], wherein an amorphous magnetostrictive ribbon, an amorphous sputtered magnetostrictive thick film, or an amorphous plated magnetostrictive film is used as the amorphous magnetic material. [8] In the high-sensitivity stress detection device according to the above [4],
An amorphous wire is used as the amorphous magnetic material.
【００１４】[0014]
〔９〕上記〔８〕記載の高感度応力検出装
置において、前記アモルファスワイヤは直径が１００μ
ｍ以下である。 〔１０〕上記〔１〕記載の高感度応力検出装置におい
て、前記交流電流として、半導体発振回路の電流を用い
るようにしたものである。 〔１１〕上記〔１０〕記載の高感度応力検出装置におい
て、前記半導体発振回路として、ＣＭＯＳマルチバイブ
レータ回路を用いるようにしたものである。[9] In the high-sensitivity stress detection device according to the above [8], the amorphous wire has a diameter of 100 μm.
m or less. [10] The high-sensitivity stress detection device according to [1], wherein a current of a semiconductor oscillation circuit is used as the alternating current. [11] The high-sensitivity stress detector according to the above [10], wherein a CMOS multivibrator circuit is used as the semiconductor oscillation circuit.
【００１５】上記のように構成したので、本発明によれ
ば、種々の高感度・高速応答のマイクロ寸法応力センサ
が構成され、従来検出が困難であった微小な張力、圧縮
力、圧力、トルク、衝撃力、気体や液体の流速、流量、
衝撃波、地震波、重力分布、機械振動などを容易に検出
することができる。特に、アモルファス磁歪リボンやア
モルファススパッタ磁歪厚膜、アモルファスメッキ磁歪
膜などでも、表皮効果を生じさせることにより、顕著に
応力検出を行うことができる。According to the present invention, various high-sensitivity and high-speed response micro-dimensional stress sensors can be formed, and minute tension, compression force, pressure and torque, which have been difficult to detect in the past, can be obtained. , Impact force, gas and liquid flow velocity, flow rate,
Shock waves, seismic waves, gravity distribution, mechanical vibrations, etc. can be easily detected. In particular, even in the case of an amorphous magnetostrictive ribbon, an amorphous sputtered magnetostrictive thick film, an amorphous plating magnetostrictive film, etc., stress can be remarkably detected by generating a skin effect.
【００１６】また、このＳＩ素子をＣＭＯＳマルチバイ
ブレータなどの半導体回路と組み合わせ、ハイブリッド
集積回路（ＨＩＣ）技術などでチップ化し、人やロボッ
トの腕、手、指関節などに固定することにより、バーチ
ャルリアリティ（ＶＲ）や義手の高性能化、自立ロボッ
トの構成などの多くの先端メカニカル技術が飛躍的に発
展すると考えられる。Further, by combining this SI element with a semiconductor circuit such as a CMOS multivibrator, forming a chip using a hybrid integrated circuit (HIC) technique or the like, and fixing it to the arm, hand, or finger joint of a human or a robot, virtual reality is achieved. It is considered that many advanced mechanical technologies such as (VR), higher performance of the prosthetic hand, and configuration of a self-standing robot will be dramatically developed.
【００１７】更に、アモルファス磁歪ワイヤで人工触覚
センサなどのマイクロ応力センサを構成して、マイクロ
マシンに結合させることにより、これまでの自立性のな
かったマイクロマシンの知能化を実現し、人工昆虫など
の新技術に貢献することができる。Furthermore, by forming a micro stress sensor such as an artificial tactile sensor using an amorphous magnetostrictive wire and coupling the micro stress sensor to a micro machine, the intellectual property of the micro machine which was not self-supporting until now has been realized, and a new type of artificial insect or the like has been realized. Can contribute to technology.
【００１８】[0018]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照しながら説明する。 〔実施例１〕図１は本発明の第１実施例を示す高感度応
力検出装置とその回路図、図２はその高感度応力検出装
置の応力による電圧振幅変化の周波数特性図（その１）
である。Embodiments of the present invention will be described below with reference to the drawings. [Embodiment 1] FIG. 1 is a circuit diagram of a high-sensitivity stress detecting device and a circuit diagram thereof according to a first embodiment of the present invention, and FIG. 2 is a frequency characteristic diagram of a voltage amplitude change due to stress of the high-sensitivity stress detecting device (part 1).
It is.
【００１９】図１において、１は負磁歪のＣｏ72.5Ｓｉ
12.5Ｂ15アモルファスワイヤ（直径３０μｍ、長さ２０
ｍｍ、回転水中超急冷法で作製した直径１３０μｍのア
モルファスワイヤを線引きした後、４ｋｇ／ｍｍ2 の張
力を与えた状態で、４７５℃、２分の加熱後、室温へ急
冷させたアモルファスワイヤ、磁歪＝−３×１０-6）で
あり、このアモルファスワイヤ１に正弦波交流電源２を
接続する。なお、３は交流電流の振幅を一定に保つ内部
抵抗である。In FIG. 1, reference numeral 1 denotes negative magnetostrictive Co 72.5 Si.
12.5 B 15 amorphous wire (diameter 30 [mu] m, length 20
mm, an amorphous wire having a diameter of 130 μm produced by a rapid quenching method in rotating water was drawn, heated at 475 ° C. for 2 minutes under a tension of 4 kg / mm 2 , quenched to room temperature, and magnetostrictive. = −3 × 10 −6 ), and a sine-wave AC power supply 2 is connected to the amorphous wire 1. Reference numeral 3 denotes an internal resistance for keeping the amplitude of the alternating current constant.
【００２０】図２は、そのアモルファスワイヤ１に張力
を印加し、正弦波交流電源２より、周波数ｆ、振幅１５
ｍＡの正弦波交流電流を通電させた時のワイヤ両端間の
電圧の振幅Ｅｍの測定結果である。この図から明らかな
ように、アモルファスワイヤ１に約６ｋｇ／ｍｍ2 〔６
０ＭＰａ（メガパスカル）〕の張力Ｆを印加すると、周
波数ｆが５０ｋＨｚから１ＭＨｚの周波数範囲でアモル
ファスワイヤ１の両端間電圧の振幅Ｅｍは上昇し、１Ｍ
Ｈｚから約２０ＭＨｚの範囲では減少した。５０ｋＨｚ
以上ではアモルファスワイヤ１両端間電圧の振幅Ｅｍは
周波数ｆの増加とともに増加しており、アモルファスワ
イヤ１に表皮効果が現れていることが分かる。FIG. 2 shows that a tension is applied to the amorphous wire 1 and a frequency f and an amplitude 15
It is a measurement result of the amplitude Em of the voltage across the wire when a sine wave AC current of mA is applied. As is clear from this figure, the amorphous wire 1 has a thickness of about 6 kg / mm 2 [6
0 MPa (megapascal)], the amplitude Em of the voltage between both ends of the amorphous wire 1 increases in the frequency range of 50 kHz to 1 MHz, and 1M
From 20 Hz to about 20 MHz. 50kHz
As described above, the amplitude Em of the voltage between both ends of the amorphous wire 1 increases as the frequency f increases, and it can be seen that the skin effect appears in the amorphous wire 1.
【００２１】図３は本発明の第１実施例で示す高感度応
力検出装置のｆ＝４００ｋＨｚおよび２０ＭＨｚにおけ
る応力による電圧振幅変化（その２）を示す図である。
この実施例では、図２で用いたＣｏＳｉＢアモルファス
ワイヤ及び正磁歪をもつ〔（Ｆｅ0.5 Ｃｏ0.5 ）72.5Ｓ
ｉ12.5Ｂ15、直径３０μｍ、長さ２０ｍｍ、磁歪＝５×
１０-6〕アモルファスワイヤに４００ｋＨｚ及び２０Ｍ
Ｈｚ、振幅２０ｍＡの正弦波電流を通電し、引っ張り荷
重Ｗを印加した場合のワイヤ両端間電圧の振幅Ｅｍの変
化率を測定した結果である。FIG. 3 is a diagram showing a voltage amplitude change (part 2) due to stress at f = 400 kHz and 20 MHz in the high-sensitivity stress detecting device shown in the first embodiment of the present invention.
In this embodiment, the CoSiB amorphous wire used in FIG. 2 and the magnetostrictive [(Fe 0.5 Co 0.5 ) 72.5 S
i 12.5 B 15 , diameter 30 μm, length 20 mm, magnetostriction = 5 ×
10 -6 ] 400kHz and 20M for amorphous wire
This is a result of measuring a rate of change in the amplitude Em of the voltage between both ends of the wire when a sine wave current having a frequency of 20 mA and an amplitude of 20 mA is applied and a tensile load W is applied.
【００２２】ｆ＝２０ＭＨｚの場合、ＣｏＳｉＢワイヤ
では、１ｇの荷重（１３ＭＰａの張力）で、上記ワイヤ
両端間電圧の振幅Ｅｍが２０％減少している。ＣｏＳｉ
Ｂアモルファスワイヤは最大抗張力３０６ＭＰａ，最大
歪み（伸び率）３．４％であるので、その歪みゲージ率
（電磁気量の変化率／伸び率）は１２８６となる。これ
は従来の最高感度をもつ半導体歪みゲージのゲージ率約
２００の約６．５倍の極めて高い値である。ＦｅＣｏＳ
ｉＢワイヤでも、ゲージ率は約４００であり、張力アニ
ールを施した細いアモルファスワイヤは、著しく高いゲ
ージ率を示すことが分かる。When f = 20 MHz, the amplitude Em of the voltage between both ends of the wire is reduced by 20% with a load of 1 g (a tension of 13 MPa) in the CoSiB wire. CoSi
Since the B amorphous wire has a maximum tensile strength of 306 MPa and a maximum strain (elongation rate) of 3.4%, its strain gauge rate (change rate of electromagnetic quantity / elongation rate) is 1286. This is an extremely high value of about 6.5 times the gauge factor of about 200 of the conventional semiconductor strain gauge having the highest sensitivity. FeCoS
The gauge factor of the iB wire is about 400, and it is understood that the thin amorphous wire subjected to the tension annealing shows a significantly high gauge factor.
【００２３】図４は図３で用いたアモルファスワイヤの
電圧がワイヤ長さ方向の外乱直流磁界で受ける影響を調
べた結果を示す図であり、図４（ａ）はＦｅＣｏＳｉＢ
ワイヤ、図４（ｂ）はＣｏＳｉＢワイヤの場合である。
図４（ａ）に示すように、ＦｅＣｏＳｉＢワイヤは±２
エルステッド（Ｏｅ）の磁界に対しては、その影響は略
零である。FIG. 4 is a diagram showing the result of examining the effect of the voltage of the amorphous wire used in FIG. 3 on the disturbance DC magnetic field in the wire length direction. FIG. 4A shows FeCoSiB.
FIG. 4B shows a case of a CoSiB wire.
As shown in FIG. 4A, the FeCoSiB wire is ± 2
The effect on the Oersted (Oe) magnetic field is substantially zero.
【００２４】また、図４（ｂ）に示すように、ＣｏＳｉ
Ｂワイヤは、張力零で微小な磁界でも影響を受けるが、
１０ＭＰａのバイアス張力を与えれば、±１Ｏｅの磁界
では、ほとんど影響を受けない。したがって、地磁気
（約０．３Ｏｅ）程度の磁界の影響は受けないことが分
かった。 〔実施例２〕図５は本発明の第２実施例を示すパルス通
電におけるＣｏＳｉＢアモルファスワイヤ電圧の張力特
性図である。Further, as shown in FIG.
The B wire is affected by a small magnetic field at zero tension,
When a bias tension of 10 MPa is applied, a magnetic field of ± 1 Oe is hardly affected. Therefore, it was found that there was no influence of the magnetic field of the geomagnetism (about 0.3 Oe). [Embodiment 2] FIG. 5 is a diagram showing a tension characteristic of a CoSiB amorphous wire voltage in pulse current application according to a second embodiment of the present invention.
【００２５】ここで、パルス電流は、パルス発生電源を
用い、高さ４０ｍＡ、幅７．２ナノ秒（ｎｓ）、繰り返
し周波数１００ｋＨｚを与えた。アモルファスワイヤ両
端間の誘起パルス電圧の高さＥは、１ｇの荷重で１０％
の減少を示した。この範囲は、ゲージ率は図３の場合よ
り小さいが、約６４０であり、半導体ストレインゲージ
のゲージ率の３倍強である。Here, a pulse current was supplied at a height of 40 mA, a width of 7.2 nanoseconds (ns), and a repetition frequency of 100 kHz using a pulse generation power supply. The height E of the induced pulse voltage between both ends of the amorphous wire is 10% at a load of 1 g.
Showed a decrease. This range has a gauge factor smaller than that of FIG. 3, but is about 640, which is slightly more than three times the gauge factor of the semiconductor strain gauge.
【００２６】この実施例から明らかなように、鋭いパル
ス電流を印加することにより、高周波正弦波電流を通電
した場合と同様に表皮効果が生じて、応力−インピーダ
ンス効果（ＳＩ効果）が敏感に発生することが分かっ
た。パルス電流は多くの高調波を含むが、正弦波に対応
させる場合はパルスの立ち上がり（または立ち下がり）
時間の逆数の周波数が考慮される。パルス電流の立ち上
がり時間が約４ナノ秒であるので、その逆数は２５０Ｍ
Ｈｚであり、十分高周波であるので、図２から、ワイヤ
電圧は張力によって減少することになる。As is apparent from this embodiment, by applying a sharp pulse current, a skin effect occurs as in the case of applying a high-frequency sinusoidal current, and a stress-impedance effect (SI effect) is generated sensitively. I found out. The pulse current contains many harmonics, but the rising (or falling) of the pulse when corresponding to a sine wave
The frequency of the reciprocal of time is taken into account. Since the rise time of the pulse current is about 4 nanoseconds, its reciprocal is 250M
Hz and a sufficiently high frequency, the wire voltage will be reduced by the tension from FIG.
【００２７】〔実施例３〕図６は本発明の第３実施例を
示す図５の実験結果を基に、ＣＭＯＳＩＣチップ１０の
中の２個のインバータＱ1 ，Ｑ2 にＲ，Ｃを接続してマ
ルチバイブレータを構成し、ＣＭＯＳインバータのスイ
ッチング時に発生する電源ラインの鋭いパルス電流をア
モルファスワイヤ１１に通電する方式の高感度応力検出
装置の構成図であり、図７にその高感度応力検出装置
（応力センサ）の応力検出の結果を示している。Embodiment 3 FIG. 6 shows a third embodiment of the present invention, in which R and C are connected to two inverters Q 1 and Q 2 in a CMOS IC chip 10 based on the experimental results of FIG. FIG. 7 is a configuration diagram of a high-sensitivity stress detection device of a system in which a sharp pulse current of a power supply line generated at the time of switching of a CMOS inverter is supplied to the amorphous wire 11 to constitute a multivibrator. (Stress sensor) shows the result of stress detection.
【００２８】アモルファスワイヤ１１の誘起パルス電圧
は、ショットキーバリアダイオードＳＢＤ１３をバッフ
ァとして、ＲＣピークホールド回路１４で直流電圧Ｅｏ
ｕｔに出力電圧として変換している。因みに、ＩＣチッ
プ１０は７４ＡＣ０４、Ｒは２０ＫΩ、Ｃは１００ｐ
Ｆ、ＲL は１０Ω、ＣH は１０００ｐＦ、ＲH は５１０
ｋΩである。The induced pulse voltage of the amorphous wire 11 is supplied to the RC peak hold circuit 14 using the Schottky barrier diode SBD 13 as a buffer and the DC voltage Eo.
ut as an output voltage. Incidentally, IC chip 10 is 74AC04, R is 20KΩ, C is 100p
F, R L is 10 [Omega, C H is 1000pF, R H is 510
kΩ.
【００２９】発振周波数１４．３５ＭＨｚ、パルス幅１
４ナノ秒、パルス電流高さ３０ｍＡとした場合、荷重１
ｇで出力電圧Ｅｏｕｔは１５％減少しており、この応力
センサのゲージ率は約９６０であり、半導体ストレイン
ゲージのゲージ率２００の約５倍近い値である。ＦｅＣ
ｏＳｉＢワイヤをヘッドとした場合は、ゲージ率は約１
７０程度であるが、応力検出特性は高い線形性を示し、
ダイナミックレンジは６ｇ（８２ＭＰａ）と広くなって
いる。Oscillation frequency 14.35 MHz, pulse width 1
4 nanoseconds, pulse current height 30 mA, load 1
At g, the output voltage Eout is reduced by 15%, and the gauge factor of this stress sensor is about 960, which is about five times the gauge factor 200 of the semiconductor strain gauge. FeC
When the head is made of oSiB wire, the gauge factor is about 1
Although it is about 70, the stress detection characteristic shows high linearity,
The dynamic range is as wide as 6 g (82 MPa).
【００３０】〔実施例４〕図８は本発明の第４実施例を
示す直径３０μｍのＣｏＳｉＢアモルファスワイヤ２２
を厚さ０．２ｍｍの石英ガラスダイアフラム２１上にス
パイラル形状にアラルダイトで接着させた圧力センサの
構成図、図９はその圧力センサの応力検出特性図であ
る。FIG. 8 shows a CoSiB amorphous wire 22 having a diameter of 30 .mu.m according to a fourth embodiment of the present invention.
FIG. 9 is a configuration diagram of a pressure sensor in which is bonded to a quartz glass diaphragm 21 having a thickness of 0.2 mm in a spiral shape with an araldite, and FIG. 9 is a stress detection characteristic diagram of the pressure sensor.
【００３１】厚さ０．２ｍｍの石英ガラスダイアフラム
２１上のアモルファスワイヤ２２の検波電圧は差動アン
プ２３に入力し、零点補償を行っている。５０ＭＰａま
での空気圧力を、図９に示すように、ほぼ線形に検出し
ている。なお、２４はアモルファスワイヤ２２に接続さ
れる交流電源、２５は交流電流の振幅を一定にするため
の内部抵抗ＲO であり、アモルファスワイヤ２２の検波
電圧は、ショットキーバリアダイオードＳＢＤ２６をバ
ッファとして、ＲＣピークホールド回路２７で直流電圧
として変換している。The detection voltage of the amorphous wire 22 on the quartz glass diaphragm 21 having a thickness of 0.2 mm is input to a differential amplifier 23 to perform zero point compensation. The air pressure up to 50 MPa is detected almost linearly as shown in FIG. Reference numeral 24 denotes an AC power supply connected to the amorphous wire 22, reference numeral 25 denotes an internal resistor R O for keeping the amplitude of the AC current constant, and the detection voltage of the amorphous wire 22 is determined by using the Schottky barrier diode SBD 26 as a buffer. An RC peak hold circuit 27 converts the DC voltage.
【００３２】〔実施例５〕図１０は本発明の第５実施例
を示す石英ガラスダイアフラム３１に、スパッタ装置を
用いてＦｅ68Ｃｏ12Ｂ20のアモルファス磁歪膜を厚さ
２．５μｍ厚さに形成し、ウェットエッチングにより幅
１ｍｍのジグザクコイル形状のアモルファス薄膜パター
ン（ＳＩ素子）３２を作製した高感度応力検出装置（応
力センサ）の構成図、図１１は本発明の第５実施例を示
す高感度応力検出装置（応力センサ）の応力検出の結果
を示す図である。Fifth Embodiment FIG. 10 shows a quartz glass diaphragm 31 according to a fifth embodiment of the present invention, in which an amorphous magnetostrictive film of Fe 68 Co 12 B 20 is formed to a thickness of 2.5 μm by using a sputtering apparatus. FIG. 11 is a configuration diagram of a high-sensitivity stress detection device (stress sensor) in which a zigzag coil-shaped amorphous thin film pattern (SI element) 32 having a width of 1 mm is formed by wet etching, and FIG. 11 shows a high sensitivity stress detection device according to a fifth embodiment of the present invention. It is a figure showing a result of stress detection of a sensitivity stress detection device (stress sensor).
【００３３】このＳＩ素子は直流１００ｍＡを通電した
状態で、２５０℃、１時間のアニールを大気中で行い、
パターン幅方向に磁気異方性を誘導させた。石英ガラス
ダイヤフラム３１の縁を外径３０ｍｍの円管に接着して
圧力を印加すると、縁近傍領域Ａと中央部領域Ｂの半径
方向の応力は互いに逆になる。すなわち、ＳＩヘッドの
裏面から正の圧力が印加されると、縁近傍領域Ａでは圧
縮力、中央部領域Ｂでは張力が発生し、負圧力ではその
逆の応力が発生する。This SI element was annealed at 250 ° C. for 1 hour in the air with a direct current of 100 mA applied.
Magnetic anisotropy was induced in the pattern width direction. When the edge of the quartz glass diaphragm 31 is adhered to a circular tube having an outer diameter of 30 mm and pressure is applied, the radial stresses in the region A near the edge and the central region B are opposite to each other. That is, when a positive pressure is applied from the back surface of the SI head, a compressive force is generated in the region A near the edge, a tension is generated in the central region B, and a reverse stress is generated at the negative pressure.
【００３４】この関係に着目し、縁近傍領域Ａおよび中
央部領域ＢのそれぞれのＳＩパターンに半値幅約５ナノ
秒のパルス電流を印加して、表皮効果を生じさせ、縁近
傍領域Ａ、中央部領域Ｂの誘起パルス電圧をそれぞれシ
ョットキーバリアダイオードＳＢＤ３３，３４と、
Ｒp ，Ｃp のピークホールド回路３５，３６で直流電圧
に変換し、差動アンプ３７に入力させる。Focusing on this relationship, a pulse current having a half-value width of about 5 nanoseconds is applied to each of the SI patterns in the edge vicinity area A and the center area B to cause a skin effect. The induced pulse voltages in the region B are respectively set to Schottky barrier diodes SBD33 and
R p, and converted into a DC voltage by the peak hold circuits 35 and 36 of C p, is input to the differential amplifier 37.
【００３５】この差動アンプ３７の出力電圧Ｖは、圧力
Ｐが零の時、零になるよう可変抵抗器ＶＲ３８で調整す
る。圧力Ｐが印加されると、縁近傍領域Ａ、中央部領域
Ｂのインピーダンスは互いに逆方向に変化するので、圧
力Ｐに比例した出力電圧Ｖが得られる。ＳＩに印加する
パルス電流は、ＣＭＯＳインバータＱ1 ，Ｑ2 と、Ｒ、
Ｃによるマルチバイブレータ出力電圧の微分パルス電圧
を印加することによって与えられる。The output voltage V of the differential amplifier 37 is adjusted by the variable resistor VR38 so that the output voltage V becomes zero when the pressure P is zero. When the pressure P is applied, the impedances of the near-edge region A and the central region B change in opposite directions, so that an output voltage V proportional to the pressure P is obtained. The pulse current applied to SI is CMOS inverters Q 1 , Q 2 , R,
It is given by applying a differential pulse voltage of the multivibrator output voltage by C.
【００３６】第３実施例（図７）と同様に、水圧を検出
した結果、感度はアモルファスワイヤの場合の約５分の
１であるが、安定な検出ができることが分かった。アモ
ルファスワイヤの場合に比べて、接着の問題がない点有
利である。なお、本発明は上記実施例に限定されるもの
ではなく、本発明の趣旨に基づいて種々の変形が可能で
あり、これらを本発明の範囲から排除するものではな
い。As in the case of the third embodiment (FIG. 7), the water pressure was detected. As a result, it was found that the sensitivity was about one-fifth of that of the amorphous wire, but stable detection was possible. It is advantageous in that there is no problem of adhesion as compared with the case of an amorphous wire. It should be noted that the present invention is not limited to the above embodiment, and various modifications can be made based on the gist of the present invention, and these are not excluded from the scope of the present invention.
【００３７】[0037]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、以下のような効果を奏することができる。 （１）力学量センサヘッドのマイクロ化および高感度・
高速応答化を実現することができる、つまり、ゲージ率
が高く、応力に対して敏感に反応する高感度応力検出装
置を提供することができる。As described above, according to the present invention, the following effects can be obtained. (1) Micro-scale mechanical sensor head and high sensitivity
It is possible to provide a high-sensitivity stress detection device that can realize high-speed response, that is, has a high gauge factor and reacts sensitively to stress.
【００３８】すなわち、種々の高感度・高速応答のマイ
クロ寸法応力センサが構成され、従来検出が困難であっ
た微小な張力、圧縮力、圧力、トルク、衝撃力、気体や
液体の流速、流量、衝撃波、地震波、重力分布、機械振
動などを容易に検出することができる。特に、アモルフ
ァス磁歪リボンやアモルファススパッタ磁歪厚膜、アモ
ルファスメッキ磁歪膜などでも、表皮効果を生じさせる
ことにより、顕著に応力検出を行うことができる。That is, various high-sensitivity and high-speed micro dimensional stress sensors are constructed, and minute tension, compressive force, pressure, torque, impact force, gas and liquid flow rates, flow rates, Shock waves, seismic waves, gravity distribution, mechanical vibrations, etc. can be easily detected. In particular, even in an amorphous magnetostrictive ribbon, an amorphous sputtered magnetostrictive thick film, an amorphous plating magnetostrictive film, etc., stress can be remarkably detected by generating a skin effect.
【００３９】（２）ＳＩ素子をＣＭＯＳマルチバイブレ
ータなどの半導体回路と組み合わせ、ハイブリッド集積
回路（ＨＩＣ）技術などでチップ化し、人やロボットの
腕、手、指関節などに固定することにより、バーチャル
リアリティ（ＶＲ）や義手の高性能化、自立ロボットの
構成などの多くの先端メカニカル技術を飛躍的に発展さ
せることができる。(2) The virtual reality is realized by combining the SI element with a semiconductor circuit such as a CMOS multivibrator, forming a chip using a hybrid integrated circuit (HIC) technique or the like, and fixing the chip to the arm, hand, or finger joint of a human or a robot. Many advanced mechanical technologies such as (VR), higher performance of prosthetic hand, and construction of a self-standing robot can be dramatically developed.
【００４０】（３）アモルファス磁歪ワイヤで人工触覚
センサなどのマイクロ応力センサを構成して、マイクロ
マシンに結合させることにより、これまでの自立性のな
かったマイクロマシンの知能化を実現し、人工昆虫など
の新技術に貢献することができる。(3) A micro-stress sensor such as an artificial tactile sensor is constituted by an amorphous magnetostrictive wire and connected to the micro-machine, thereby realizing the intelligence of the micro-machine which has not been self-sustained so far, and realizing artificial intelligence and the like. Can contribute to new technology.
【図１】本発明の第１実施例を示す高感度応力検出装置
とその回路図である。FIG. 1 is a circuit diagram of a high-sensitivity stress detecting device according to a first embodiment of the present invention and a circuit diagram thereof.
【図２】本発明の第１実施例を示す高感度応力検出装置
の応力による電圧振幅変化の周波数特性図（その１）で
ある。FIG. 2 is a frequency characteristic diagram (part 1) of a voltage amplitude change due to stress of the high-sensitivity stress detection device according to the first embodiment of the present invention.
【図３】本発明の第１実施例を示す高感度応力検出装置
の応力による電圧振幅変化の周波数特性図（その２）で
ある。FIG. 3 is a frequency characteristic diagram (part 2) of a voltage amplitude change due to stress of the high-sensitivity stress detection device according to the first embodiment of the present invention.
【図４】図３で用いたアモルファスワイヤの電圧がワイ
ヤ長さ方向の外乱直流磁界で受ける影響を調べた結果を
示す図である。FIG. 4 is a diagram showing the results of examining the effect of the voltage of the amorphous wire used in FIG. 3 on a disturbance DC magnetic field in the wire length direction.
【図５】本発明の第２実施例を示すパルス通電における
ＣｏＳｉＢアモルファスワイヤ電圧の張力特性図であ
る。FIG. 5 is a diagram showing a tension characteristic of a CoSiB amorphous wire voltage in a pulse current according to the second embodiment of the present invention.
【図６】本発明の第３実施例を示すＣＭＯＳＩＣチップ
の中の２個のインバータにＲ，Ｃを接続してマルチバイ
ブレータを構成し、ＣＭＯＳインバータのスイッチング
時に発生する電源ラインの鋭いパルス電流をアモルファ
スワイヤに通電する方式を示す高感度応力検出装置の構
成図である。FIG. 6 shows a third embodiment of the present invention, in which R and C are connected to two inverters in a CMOS IC chip to form a multivibrator, and a sharp pulse current of a power supply line generated at the time of switching of the CMOS inverter is generated. FIG. 2 is a configuration diagram of a high-sensitivity stress detection device showing a method of supplying a current to an amorphous wire.
【図７】本発明の第３実施例を示す高感度応力検出装置
（応力センサ）の応力検出の結果を示す図である。FIG. 7 is a diagram illustrating a result of stress detection by a high-sensitivity stress detection device (stress sensor) according to a third embodiment of the present invention.
【図８】本発明の第４実施例を示す直径３０μｍのＣｏ
ＳｉＢアモルファスワイヤを厚さ０．２ｍｍの石英ガラ
スダイアフラム上にスパイラル形状にアラルダイトで接
着させた高感度応力検出装置（応力センサ）の構成図で
ある。FIG. 8 shows a fourth embodiment of the present invention, in which a 30 μm diameter Co
FIG. 2 is a configuration diagram of a high-sensitivity stress detection device (stress sensor) in which an SiB amorphous wire is bonded in a spiral shape with an araldite on a quartz glass diaphragm having a thickness of 0.2 mm.
【図９】本発明の第４実施例を示す高感度応力検出装置
（応力センサ）の応力検出の結果を示す図である。FIG. 9 is a diagram illustrating a result of stress detection by a high-sensitivity stress detection device (stress sensor) according to a fourth embodiment of the present invention.
【図１０】本発明の第５実施例を示す石英ガラスダイア
フラムに、スパッタ装置を用いてＦｅ68Ｃｏ12Ｂ20のア
モルファス磁歪膜を厚さ２．５μｍ厚さに形成し、ウェ
ットエッチングにより幅１ｍｍのジグザクコイル形状の
アモルファス薄膜パターン（ＳＩ素子）を作製した高感
度応力検出装置（応力センサ）の構成図である。FIG. 10 shows an amorphous magnetostrictive film of Fe 68 Co 12 B 20 formed to a thickness of 2.5 μm on a quartz glass diaphragm according to a fifth embodiment of the present invention using a sputtering apparatus, and a width of 1 mm by wet etching. FIG. 2 is a configuration diagram of a high-sensitivity stress detection device (stress sensor) in which an amorphous thin film pattern (SI element) having a zigzag coil shape is manufactured.
【図１１】本発明の第５実施例を示す高感度応力検出装
置（応力センサ）の応力検出の結果を示す図である。FIG. 11 is a diagram showing a result of stress detection by a high-sensitivity stress detection device (stress sensor) according to a fifth embodiment of the present invention.
１，１１，２２ アモルファスワイヤ ２ 正弦波交流電源 ３，２５ 負荷抵抗 １０ ＣＭＯＳＩＣチップ １３，２６，３３，３４ ショッキキーバリアダイオ
ードＳＢＤ １４，２７，３５，３６ ＲＣピークホールド回路 ２１，３１ 石英ガラスダイアフラム ２３，３７ 差動アンプ ２４ 交流電源 ３２ アモルファス薄膜パターン ３８ 可変抵抗器ＶＲ1,11,22 Amorphous wire 2 Sine wave AC power supply 3,25 Load resistance 10 CMOS IC chip 13,26,33,34 Shocky key barrier diode SBD 14,27,35,36 RC peak hold circuit 21,31 Quartz glass diaphragm 23 , 37 Differential amplifier 24 AC power supply 32 Amorphous thin film pattern 38 Variable resistor VR
Claims (11)
に対して前記磁性体のインピーダンスを変化させ、ゲー
ジ率を３００以上としたことを特徴とする高感度応力検
出装置。1. A high-sensitivity stress detecting device, wherein an impedance of the magnetic material is changed with respect to stress in a state where an alternating current is applied to the magnetic material, and a gauge factor is set to 300 or more.
いて、前記交流電流は高周波電流またはパルス電流であ
る高感度応力検出装置。2. The high-sensitivity stress detection device according to claim 1, wherein the alternating current is a high-frequency current or a pulse current.
いて、前記応力は張力や圧縮力、トルクまたは衝撃力で
ある高感度応力検出装置。3. The high-sensitivity stress detection device according to claim 1, wherein said stress is a tension, a compression force, a torque or an impact force.
いて、前記磁性体として、アモルファス磁性体を用いる
ことを特徴とする高感度応力検出装置。4. The high-sensitivity stress detection device according to claim 1, wherein an amorphous magnetic material is used as said magnetic material.
いて、前記磁性体として負の磁歪をもつアモルファス磁
性体を用いることを特徴とする高感度応力検出装置。5. The high-sensitivity stress detecting device according to claim 4, wherein an amorphous magnetic material having negative magnetostriction is used as said magnetic material.
いて、前記磁性体として応力下加熱・冷却処理を施した
アモルファス磁性体を用いることを特徴とする高感度応
力検出装置。6. The high-sensitivity stress detection device according to claim 4, wherein an amorphous magnetic material subjected to heating and cooling under stress is used as the magnetic material.
いて、前記アモルファス磁性体として、アモルファス磁
歪リボン、アモルファススパッタ磁歪厚膜、又はアモル
ファスメッキ磁歪膜を用いることを特徴とする高感度応
力検出装置。7. The high-sensitivity stress detecting device according to claim 4, wherein an amorphous magnetostrictive ribbon, an amorphous sputtered magnetostrictive thick film, or an amorphous plating magnetostrictive film is used as the amorphous magnetic material. .
いて、前記アモルファス磁性体として、アモルファスワ
イヤを用いることを特徴とする高感度応力検出装置。8. The high-sensitivity stress detection device according to claim 4, wherein an amorphous wire is used as said amorphous magnetic material.
いて、前記アモルファスワイヤは、直径が１００μｍ以
下であることを特徴とする高感度応力検出装置。9. The high-sensitivity stress detection device according to claim 8, wherein said amorphous wire has a diameter of 100 μm or less.
おいて、前記交流電流として、半導体発振回路の電流を
用いることを特徴とする高感度応力検出装置。10. The high-sensitivity stress detection device according to claim 1, wherein a current of a semiconductor oscillation circuit is used as the alternating current.
において、前記半導体発振回路として、ＣＭＯＳマルチ
バイブレータ回路を用いることを特徴とする高感度応力
検出装置。11. The high-sensitivity stress detection device according to claim 10, wherein a CMOS multivibrator circuit is used as said semiconductor oscillation circuit.
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| JP32636096A JP3614588B2 (en) | 1996-12-06 | 1996-12-06 | High sensitivity stress detector |
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| JP32636096A JP3614588B2 (en) | 1996-12-06 | 1996-12-06 | High sensitivity stress detector |
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| JP3614588B2 JP3614588B2 (en) | 2005-01-26 |
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| JPH11326034A (en) * | 1998-05-13 | 1999-11-26 | Uchihashi Estec Co Ltd | Noncontact type vibration sensor and vibration detecting method |
| ES2146165A1 (en) * | 1998-05-05 | 2000-07-16 | Univ Madrid Complutense | PRECISION SCALE BASED ON MAGNETOSTRICTIVE AMORPHIC THREAD. |
| JP2002221513A (en) * | 2001-01-25 | 2002-08-09 | Seiji Motojima | Microsensor and its use |
| WO2003083423A1 (en) * | 2002-03-29 | 2003-10-09 | Japan Science And Technology Agency | Method for producing stress impedance effect element and that element |
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| JP2009036733A (en) * | 2007-08-03 | 2009-02-19 | Fdk Corp | Strain sensor |
| CN103107282A (en) * | 2013-02-05 | 2013-05-15 | 兰州大学 | Method for improving giant magneto-impedance effect of materials |
| CN114061434A (en) * | 2021-11-15 | 2022-02-18 | 浙江大学 | Structural health monitoring system and method for magnetic fiber composite material |
| CN114061435A (en) * | 2021-11-15 | 2022-02-18 | 无锡纤发新材料科技有限公司 | Micro-strain sensor based on magnetic fibers and strain monitoring method |
| CN114061436A (en) * | 2021-11-15 | 2022-02-18 | 无锡纤发新材料科技有限公司 | A kind of magnetic fiber sensor and its curvature monitoring method with identifiable deflection direction |
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