JPH10172880A - Photoresist developing device - Google Patents
Photoresist developing deviceInfo
- Publication number
- JPH10172880A JPH10172880A JP8326930A JP32693096A JPH10172880A JP H10172880 A JPH10172880 A JP H10172880A JP 8326930 A JP8326930 A JP 8326930A JP 32693096 A JP32693096 A JP 32693096A JP H10172880 A JPH10172880 A JP H10172880A
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- glass substrate
- cleaning
- gas
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、フォトレジスト現
像装置に関し、特にガラス基板のように大きな基板に塗
布されたフォトレジスト膜の潜像を現像するフォトレジ
スト現像装置に関する。The present invention relates to a photoresist developing apparatus, and more particularly to a photoresist developing apparatus for developing a latent image of a photoresist film applied to a large substrate such as a glass substrate.
【０００２】[0002]
【従来の技術】薄膜トランジスタ（ＴＦＴ）を備えたい
わゆるアクティブ・マトリックス型液晶表示装置の製造
工程においては、長方形平板状のガラス基板の表面に、
透明導電膜、各種の金属膜、半導体膜および絶縁膜など
の微細パターン加工を行う必要があり、そのパターン加
工を行なうため、フォトレジスト膜を形成しパターンを
リソグラフィなどで転写し潜像を形成し、しかる後、フ
ォトレジスト現像装置により潜像パターンを現像してい
た。2. Description of the Related Art In a manufacturing process of a so-called active matrix type liquid crystal display device provided with a thin film transistor (TFT), a rectangular flat glass substrate has
It is necessary to perform fine pattern processing on transparent conductive films, various metal films, semiconductor films, insulating films, and so on.To perform the pattern processing, a photoresist film is formed and the pattern is transferred by lithography or the like to form a latent image. Thereafter, the latent image pattern was developed by a photoresist developing device.
【０００３】この種の現像装置は、フォトレジストが塗
布されたガラス基板を保持するチャックと、チャックを
回転する回転駆動機構駆と、ガラス基板のフォトレジス
ト面に現像液を滴下し全面に肉盛りする移動し得るノズ
ルとを備えている。そして、肉盛りされた現像液により
フォトレジストに潜像するパターンを現像液で現像し上
から洗浄液を噴射しガラス基板を回転させながら残りの
現像液を洗い流していた。A developing device of this type includes a chuck for holding a glass substrate coated with a photoresist, a rotary drive mechanism for rotating the chuck, and a developer that is dropped on the photoresist surface of the glass substrate to build up the entire surface. And a movable nozzle. Then, a pattern which forms a latent image on the photoresist is developed with the overlaid developing solution with the developing solution, and a cleaning solution is sprayed from above to wash away the remaining developing solution while rotating the glass substrate.
【０００４】図４は現像後のガラス基板を示す斜視図で
ある。上述した現像装置でガラス基板の現像処理を行な
うと、図４に示すように、現像液がガラス基板１５の裏
面に現像液が回り込み、ガラス基板１５の裏面に液残り
１６が付着した状態になる。この液残り１６は後工程の
ラインを汚染するだけではなく後工程における品質の重
大な欠陥をもたらすことになる。FIG. 4 is a perspective view showing a glass substrate after development. When the developing process of the glass substrate is performed by the developing device described above, the developing solution flows around the back surface of the glass substrate 15 as shown in FIG. 4, and the liquid residue 16 adheres to the back surface of the glass substrate 15. . The liquid residue 16 not only contaminates the post-processing line, but also causes a serious quality defect in the post-processing.
【０００５】このような液残りを除去する手段を備える
装置が種々提案されている。例えば、特開平１−２３１
０４６号公報に開示されているように、原盤に形成され
たフォトレジスト膜を現像後に、原盤の表面および裏面
に付着している現像液を表面と裏面とから水洗ノズルで
水洗し、しかる後、乾燥ノズルで原盤の表裏面を乾燥し
ている。[0005] Various devices having means for removing such liquid residue have been proposed. For example, JP-A-1-231
As disclosed in Japanese Patent No. 046, after developing the photoresist film formed on the master, the developer adhering to the front and back surfaces of the master is washed with water from the front and back surfaces with a washing nozzle, and thereafter, Both sides of the master are dried with a drying nozzle.
【０００６】また、現像液ではないが、フォトレジスト
膜を形成時に半導体ウェハの基板の裏面に廻り込むフォ
トレジストを除去する手段をもつスピンナーとして、例
えば、特開平２−２４１５７１号公報に開示されてい
る。このスピンナーは、基板の裏面外周部にノズルの先
端が位置するように一つ以上のバックリンスノズルと、
回転台の裏面外周部にガス噴出口とを設け、ポリイミド
樹脂であるレジストをバックリンスノズルで溶解し、し
かる後に、溶解して裏面に付着した樹脂材をガス噴出口
からガスを基板裏面外周部を通って外側に流れるように
ガスを噴出させ吹き飛ばすことを特徴としている。Further, as a spinner having a means for removing a photoresist which is not a developing solution but wraps around the back surface of a substrate of a semiconductor wafer when a photoresist film is formed, it is disclosed in, for example, JP-A-2-241571. I have. This spinner has one or more back rinse nozzles such that the tip of the nozzle is located on the outer peripheral portion of the back surface of the substrate,
A gas outlet is provided on the outer periphery of the back surface of the turntable, and the resist, which is a polyimide resin, is dissolved by a back rinse nozzle. It is characterized in that gas is blown out and blown off so as to flow outward through the gas.
【０００７】さらに、このレジスト樹脂を除去する洗浄
装置として、特開平４−３１８９１６号公報に開示され
ている。この洗浄装置は、レジスト塗布装置とは別個に
設けられている。そして、真空チャックに吸着されたガ
ラス基板の下方にバックリンス吐出ノズルとエアを吐出
するエアブローノズルとを設け、ガラス基板が回転して
いる状態で、低沸点有機溶剤のバックリンス液を吐出し
ガラス基板の裏面に付着したフォトレジストを除去し、
その後、カラス基板の回転数を上げ、遠心力によりバッ
クリンス液を振り切ると同時にエアブローノズルからエ
アを吐出し乾燥させることを特徴としている。Further, a cleaning apparatus for removing the resist resin is disclosed in JP-A-4-318916. This cleaning device is provided separately from the resist coating device. Then, a back rinse discharge nozzle and an air blow nozzle for discharging air are provided below the glass substrate adsorbed by the vacuum chuck, and a back rinse liquid of a low boiling organic solvent is discharged while the glass substrate is rotating. Remove the photoresist adhering to the back of the substrate,
Thereafter, the number of rotations of the crow substrate is increased, the back rinse liquid is shaken off by centrifugal force, and at the same time, air is discharged from the air blow nozzle and dried.
【０００８】[0008]
【発明が解決しようとする課題】上述した従来の現像装
置あるいはフォトレジスト塗布装置の内の特開平１−２
３１０４６号公報に開示された現像装置では、裏面水洗
ノズルで現像液を洗い流してから、裏面乾燥ノズルで乾
燥させるというように洗浄液をガラス基板に付着した状
態で乾燥するので、乾燥に時間がかかるという欠点があ
る。また、裏面乾燥ノズルをガラス基板の外側に移動さ
せる機構を設ける必要があり、このような駆動機構を下
カップ内のように水分を含む環境下に設置することは故
障が起き易いだけではなく設備コストが高くなるという
欠点がある。SUMMARY OF THE INVENTION Among the above-mentioned conventional developing apparatus or photoresist coating apparatus, Japanese Patent Laid-Open No. 1-2
In the developing device disclosed in Japanese Patent No. 31046, the cleaning liquid is dried in a state where the cleaning liquid adheres to the glass substrate, such that the developing liquid is washed off with the backside washing nozzle and then dried with the backside drying nozzle. There are drawbacks. In addition, it is necessary to provide a mechanism for moving the backside drying nozzle to the outside of the glass substrate, and installing such a driving mechanism in an environment containing moisture, such as in a lower cup, is not only likely to cause a failure but also equipment. There is a disadvantage that the cost is high.
【０００９】また、特開平２−２４１５７１号公報に開
示されているスピンナーの場合は、レジストをバックリ
ンスノズルで溶解してから、溶解した樹脂液を乾燥して
いるので処理時間がかかるという欠点がある。また、ガ
ス噴出路をブロック状のガス噴出筒の平坦面の開口から
回転台の隙間で形成されているため、洗浄の際に、洗浄
液がガス噴出路から入り込みガス噴出筒の平坦部に溜
り、ガス噴出時に洗浄液を吹き飛ばし基板を汚染する恐
れがある。In the case of the spinner disclosed in Japanese Patent Application Laid-Open No. Hei 2-241571, the processing time is long since the resist is dissolved with a back rinse nozzle and the dissolved resin solution is dried. is there. Further, since the gas ejection path is formed from the opening of the flat surface of the block-shaped gas ejection cylinder to the gap between the turntable, during cleaning, the cleaning liquid enters from the gas ejection path and accumulates on the flat portion of the gas ejection cylinder, When the gas is blown out, the cleaning liquid may be blown off and the substrate may be contaminated.
【００１０】さらに、特開平４−３１８９１６のフォト
レジスト塗布装置では、基板洗浄装置をレジスト塗布装
置とは別にもうけているので、その分設備コストが高価
なものとなると同時に基板を塗布装置から洗浄装置に移
載しなければならないという欠点がある。また、裏面エ
アブロー用ノズルからのエアが外側に流れるように配置
されておらず、経過時間と回転数との関係を示すグラフ
においてもリンスの処理とエアブローによる処理が別々
なので処理時間がかかるという欠点がある。Further, in the photoresist coating apparatus disclosed in Japanese Patent Application Laid-Open No. 4-318916, a substrate cleaning apparatus is provided separately from the resist coating apparatus. There is a disadvantage that must be transferred to. In addition, the air from the back side air blowing nozzle is not arranged to flow outward, and the graph showing the relationship between the elapsed time and the number of revolutions also requires processing time because rinsing processing and air blowing processing are separate. There is.
【００１１】一方、液晶基板であるガラス基板はサイズ
が種々あり、大きいガラス基板の場合、真空保持力を大
きくするために大きな真空回転チャックを備える現像装
置に変えなければならないという問題もあった。On the other hand, glass substrates as liquid crystal substrates have various sizes, and in the case of a large glass substrate, there has been a problem that a developing device having a large vacuum rotary chuck must be used in order to increase the vacuum holding force.
【００１２】従って、本発明の目的は、ガラス基板の裏
面に付着する現像液残りを短時間で除去できる汎用性の
あるフォトレジスト現像装置を提供することである。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a general-purpose photoresist developing apparatus capable of removing the residual developer remaining on the back surface of a glass substrate in a short time.
【００１３】[0013]
【課題を解決するための手段】本発明の特徴は、表面に
フォトレジストが塗布されたガラス基板を回転可能に保
持する基板保持手段と、上記基板保持手段を回転駆動す
る駆動手段と、前記ガラス基板保持手段に保持されたガ
ラス基板の該フォトレジスト面に現像液を滴下するノズ
ルとを備えるフォトレジスト現像装置において、前記ガ
ラス基板に前記現像液が滴下され該現像液が盛られて潜
像が現像された後に回転する該ガラス基板の回転中心か
ら最も近い辺の裏面の該辺に近い部分に洗浄液が衝突す
るように噴出口を向けかつ垂直よりやや水平に傾けに所
定の角度に傾け該洗浄液を噴射する洗浄ノズルと、この
洗浄ノズルの該洗浄液の噴射と同時に乾燥ガスを噴射す
るとともに前記洗浄ノズルの傾き角度より水平に近い角
度でガス噴射口を向けかつ前記洗浄ノズルより内側に設
けられているガス噴出ノズルを備えるフォトレジスト現
像装置である。また、前記洗浄ノズルと前記ガス噴射ノ
ズルを一体化する棒状の配管構成体を備えるか、あるい
は、前記洗浄ノズルと前記ガス噴出ノズルとでなるノズ
ル対の複数個が円周上に配設されるリング状の配管構成
体を備えるかが望ましい。SUMMARY OF THE INVENTION The present invention is characterized in that a substrate holding means for rotatably holding a glass substrate having a surface coated with a photoresist, a driving means for rotating and driving the substrate holding means, and the glass And a nozzle for dropping a developing solution onto the photoresist surface of the glass substrate held by the substrate holding means, wherein the developing solution is dropped on the glass substrate and the developing solution is applied to form a latent image. The cleaning liquid is tilted at a predetermined angle so that the cleaning liquid is directed so that the cleaning liquid collides with a portion of the back surface of the side closest to the rotation center of the glass substrate that rotates after development and the cleaning liquid collides with the side, and is tilted slightly more horizontally than vertically. A cleaning nozzle that injects the cleaning liquid, and simultaneously injects a dry gas simultaneously with the injection of the cleaning liquid of the cleaning nozzle, and injects the gas injection port at an angle that is more horizontal than the inclination angle of the cleaning nozzle. A photoresist developing apparatus having a gas ejection nozzle from Kekatsu the cleaning nozzle is provided inside. In addition, the cleaning nozzle and the gas injection nozzle are provided with a rod-shaped piping structure, or a plurality of nozzle pairs including the cleaning nozzle and the gas ejection nozzle are arranged on a circumference. It is desirable to provide a ring-shaped piping structure.
【００１４】[0014]
【発明の実施の形態】図１（ａ）および（ｂ）は本発明
の一実施の形態におけるフォトレジスト現像装置の断面
図および洗浄液の流れとガスの流れの状態を示す図であ
る。このフォトレジスト現像装置は、図１（ａ）に示す
ように、回転するガラス基板１５の回転中心から最も近
い辺１４の裏面の近い部分に洗浄液が衝突するようにか
つ垂直よりやや水平に所定の角度α1 に噴射口を傾け洗
浄液を噴射する洗浄ノズル２と、この洗浄ノズル２の洗
浄液の噴射と同時に乾燥ガスを噴射するとともに洗浄ノ
ズル２の噴射口の傾き角度α1 より水平に近い角度α2
でガス噴射口を向けかつ洗浄ノズル２より内側に配置さ
れているガス噴出ノズル３とを設けたことである。それ
以外は従来と同じである。1 (a) and 1 (b) are a cross-sectional view of a photoresist developing apparatus according to an embodiment of the present invention and a diagram showing a state of a flow of a cleaning liquid and a flow of a gas. As shown in FIG. 1A, the photoresist developing device is designed so that the cleaning liquid collides with a portion near the back surface of the side 14 closest to the center of rotation of the rotating glass substrate 15 and a predetermined horizontal direction rather than a vertical direction. a cleaning nozzle 2 for jetting a cleaning liquid tilting angle alpha 1 to the injection port, the angle close to the horizontal than the slope angle alpha 1 of the injection port of the cleaning nozzle 2 with injects injection simultaneously with the drying gas of the cleaning liquid of the cleaning nozzle 2 alpha Two
And a gas ejection nozzle 3 that is disposed inside the cleaning nozzle 2 with the gas ejection port facing. Otherwise, it is the same as the conventional one.
【００１５】この洗浄ノズル２とガス噴出ノズル３を一
体化した配管構成体１は軸受部６にさし込みボルトで固
定されている。そして、回転軸１１の周囲に等間隔に、
例えば、３本程度配置されている。また、ガラス基板１
５の大きさあるいは短辺と長辺の長さに応じて洗浄ノズ
ル２の傾斜角度およびガス噴射ノズル３の傾斜角度が変
えられた配管構成体１に交換することもできる。さら
に、ガラス基板１５が回転し洗浄液が基板から外れない
ように、洗浄液ノズル２はガラス基板１５の回転中心か
ら最も近い辺１４すなわち長辺の裏側部分に洗浄ノズル
２の洗浄液が噴射されるようにしている。The pipe structure 1 in which the cleaning nozzle 2 and the gas ejection nozzle 3 are integrated is inserted into a bearing 6 and fixed with bolts. And, at equal intervals around the rotating shaft 11,
For example, about three are arranged. Also, the glass substrate 1
It is also possible to replace the pipe structure 1 in which the inclination angle of the cleaning nozzle 2 and the inclination angle of the gas injection nozzle 3 are changed according to the size of 5, or the length of the short side and the long side. Further, in order to prevent the cleaning liquid from coming off the substrate by rotating the glass substrate 15, the cleaning liquid nozzle 2 is designed so that the cleaning liquid of the cleaning nozzle 2 is jetted to the side 14 closest to the rotation center of the glass substrate 15, that is, the back side of the long side. ing.
【００１６】なお、洗浄液は、例えば、現像液が薄まる
ように純水などが望ましく、飛散してガラス基板に再付
着しても汚染による品質の欠陥を起さないようにする。
また、ガスは安価な乾燥窒素が望ましく、ガス噴出ノズ
ル３より出るガスの噴射角度α2 が洗浄ノズル２の角度
α1 よりさく設けてあるため、回転するガラス基板１５
の裏面に噴射された洗浄液は、図１（ｂ）に示すよう
に、現像液を薄めると同時にガラス基板１５の外側に押
し流す作用をもたらし、さらに、噴射された洗浄液と同
時に噴射されるガス噴射ノズル３のガスは、洗浄液の噴
射圧力の方向と合成されガラス基板１５の裏面に沿って
ミスト状の風になって流れ薄められた僅な現像液をガラ
ス基板１５の外側に吹き飛ばす。The washing liquid is desirably pure water or the like, for example, so that the developing solution is diluted. Even if the washing liquid is scattered and re-attached to the glass substrate, it does not cause a quality defect due to contamination.
The gas is inexpensive dry nitrogen is preferred, since the injection angle alpha 2 of the gas exiting from the gas ejection nozzle 3 is provided fence than the angle alpha 1 of the washing nozzle 2, a glass substrate 15 to rotate
As shown in FIG. 1 (b), the cleaning liquid sprayed on the back surface of the substrate has the effect of diluting the developing solution and at the same time flushing it to the outside of the glass substrate 15, and further, the gas spray nozzle sprayed simultaneously with the sprayed cleaning liquid. The gas of No. 3 is combined with the direction of the jetting pressure of the cleaning liquid, flows along the back surface of the glass substrate 15 in the form of a mist, and blows a small amount of the diluted developing solution to the outside of the glass substrate 15.
【００１７】図２は図１のフォトレジスト現像装置の動
作を説明するためのタイミングチャートである。次に、
図１と図２を参照して、このフォトレジスト現像装置の
動作を説明する。まず、図１の回転チャックにガラス基
板１５を載置し真空吸着で保持する。そして、図２のｔ
1 の時間内で、図１のアーム１２に並べて配設された複
数の現像液ノズル１３から現像液を滴下しながらカラス
基板１５上を移動し、現像液をガラス基板１５上に盛り
付けする。FIG. 2 is a timing chart for explaining the operation of the photoresist developing device of FIG. next,
The operation of the photoresist developing device will be described with reference to FIGS. First, the glass substrate 15 is placed on the rotary chuck shown in FIG. 1 and held by vacuum suction. And t in FIG.
Within one time, the developer is moved on the crow substrate 15 while dropping the developer from a plurality of developer nozzles 13 arranged side by side on the arm 12 in FIG.
【００１８】次に、ｔ2 の時間でガラス基板１５を回転
すると同時にガラス基板１５の上から図示していないと
ころの洗浄ノズルから洗浄水をガラス基板１５に滴下し
回転遠心力を伴なって外側に現像液を流し出す。このと
き、ガス噴出ノズル３でガスをガラス基板１５の裏面に
吹き付ける。このようにすれば、洗浄液に混入した現像
液がガラス基板１５の裏面に廻り込むことを防止でき
る。Next, the glass substrate 15 is rotated at time t 2 , and at the same time, washing water is dropped onto the glass substrate 15 from a cleaning nozzle (not shown) from the top of the glass substrate 15, and the cleaning water is applied to the outside with a rotating centrifugal force. Pour out the developer. At this time, the gas is sprayed on the back surface of the glass substrate 15 by the gas ejection nozzle 3. In this way, it is possible to prevent the developer mixed in the cleaning liquid from flowing to the back surface of the glass substrate 15.
【００１９】次に、ｔ3 時間内で上カップ９と下カップ
８との間をシャッタ７で閉じ、ブローノズル１０から乾
燥窒素を噴射しガラス基板１５の表面を乾燥する。次に
ｔ4〜ｔ6 時間内で、ガラス基板１５の回転数を例えば
３００ＲＰＭから１０００ＲＰＭ程度に上げ、洗浄ノズ
ル２から洗浄液をガス噴出ノズル３からガスを噴射し、
ガラス基板１５の裏面を洗浄すると同時に乾燥させる。
なお、ｔ4 〜ｔ6 の間の適当な時間で洗浄ノズル２の洗
浄液の噴射を停止しても良い。Next, the space between the upper cup 9 and the lower cup 8 is closed by the shutter 7 within the time t 3 , and dry nitrogen is injected from the blow nozzle 10 to dry the surface of the glass substrate 15. Next, within a time period from t 4 to t 6 , the rotation speed of the glass substrate 15 is increased from, for example, 300 RPM to about 1000 RPM, a cleaning liquid is injected from the cleaning nozzle 2 and a gas is injected from the gas injection nozzle 3,
The back surface of the glass substrate 15 is washed and dried at the same time.
Incidentally, the injection of the cleaning nozzle 2 of the cleaning liquid at a suitable time between t 4 ~t 6 may be stopped.
【００２０】図３は図１の配管構成体の変形例を示す斜
視図である。近年、液晶基板が大型化しガラス基板が益
々大きくなる。このように大型のガラス基板であると、
同じ回転チャックで真空圧力で吸着しても保持力が弱
く、ガラス基板の回転数を上げられない。そこで、回転
数を上げなくてもガラス基板の裏面を洗浄できるよう
に、図３に示すように、洗浄ノズル２とガス噴出ノズル
３とでなるノズル対の複数個が回転軸１１を囲むように
円周上に配設されるリング状配管構成体５を前述の棒状
の配管構成体１の代りに設けたことである。FIG. 3 is a perspective view showing a modification of the piping structure of FIG. In recent years, liquid crystal substrates have become larger and glass substrates have become increasingly larger. With such a large glass substrate,
Even if suction is performed with the same rotary chuck under vacuum pressure, the holding force is weak, and the rotation speed of the glass substrate cannot be increased. Therefore, as shown in FIG. 3, a plurality of nozzle pairs including the cleaning nozzle 2 and the gas ejection nozzle 3 surround the rotating shaft 11 so that the back surface of the glass substrate can be cleaned without increasing the rotation speed. The ring-shaped piping structure 5 arranged on the circumference is provided in place of the rod-shaped piping structure 1 described above.
【００２１】勿論、このリング状配管構成体５は小さい
ガラス基板にも適用できるし、前述の棒状の配管構成体
では、複数本を必要するのに対し、このリング状配管構
成体は一つで済むことから、より安価となる利点があ
る。Of course, this ring-shaped piping structure 5 can be applied to a small glass substrate, and the above-mentioned rod-shaped piping structure requires a plurality of tubes, whereas this ring-shaped piping structure is only one. Since it is completed, there is an advantage that the cost is lower.
【００２２】[0022]
【発明の効果】以上説明したように本発明は、ガラス基
板の下方に配置するとともに回転軸の外側にことによっ
て、ガラス基板の表面から裏面に廻り込む現像液を薄め
乾燥ガスとともにガラス基板外に吹き飛ばし、より短時
間に裏面に廻り込む現像液を除去し汚染による品質の欠
陥の発生を防止できるという効果がある。As described above, according to the present invention, by disposing the developing solution flowing from the front surface of the glass substrate to the rear surface by disposing the developing solution below the glass substrate and outside the rotating shaft, the developing gas is dried out of the glass substrate together with the drying gas. There is an effect that the developer which is blown off and circulates on the back surface in a shorter time can be removed to prevent the occurrence of quality defects due to contamination.
【００２３】また、洗浄ノズルとガス噴射ノズルを一体
化した配管構成体のみ設けるだけで済み設備コストを安
価にするという効果がある。さらに、配管構成体を多数
のノズル対をもつ一つのリング状にし、ノズル対の数に
応じてガラス基板の回転数を低くでき、保持力の弱い回
転チャックでも大きいガラス基板を搭載でき汎用性を高
めることもできる。In addition, it is only necessary to provide only a pipe structure in which the cleaning nozzle and the gas injection nozzle are integrated, and there is an effect that the equipment cost is reduced. Furthermore, the piping structure is made into a single ring shape with many pairs of nozzles, and the number of rotations of the glass substrate can be reduced according to the number of nozzle pairs. Can be increased.
【図１】本発明の一実施の形態におけるフォトレジスト
現像装置の断面図および洗浄液の流れとガスの流れの状
態を示す図である。FIG. 1 is a cross-sectional view of a photoresist developing device according to an embodiment of the present invention and a diagram showing a state of a flow of a cleaning liquid and a flow of a gas.
【図２】図１のフォトレジスト現像装置の動作を説明す
るためのタイミングチャートである。FIG. 2 is a timing chart for explaining the operation of the photoresist developing device of FIG. 1;
【図３】図１の配管構成体の変形例を示す斜視図であ
る。FIG. 3 is a perspective view showing a modified example of the piping structure of FIG. 1;
【図４】現像後のガラス基板を示す斜視図である。FIG. 4 is a perspective view showing a glass substrate after development.
１ 配管構成体 ２ 洗浄ノズル ３ ガス噴出ノズル ４ 回転チャック ５ リング状配管構成体 ６ 軸受部 ７ シャッタ ８ 下カップ ９ 上カップ １０ ブローノズル １１ 回転軸 １２ アーム １３ 現像液ノズル １４ 最も近い辺 １５ ガラス基板 １６ 液残り DESCRIPTION OF SYMBOLS 1 Piping structure 2 Cleaning nozzle 3 Gas ejection nozzle 4 Rotating chuck 5 Ring-shaped piping structure 6 Bearing part 7 Shutter 8 Lower cup 9 Upper cup 10 Blow nozzle 11 Rotation axis 12 Arm 13 Developer nozzle 14 Nearest side 15 Glass substrate 16 liquid remaining
Claims (3)
ス基板を回転可能に保持する基板保持手段と、上記基板
保持手段を回転駆動する駆動手段と、前記ガラス基板保
持手段に保持されたガラス基板の該フォトレジスト面に
現像液を滴下するノズルとを備えるフォトレジスト現像
装置において、前記ガラス基板に前記現像液が滴下され
該現像液が盛られて潜像が現像された後に回転する該ガ
ラス基板の回転中心から最も近い辺の裏面の該辺に近い
部分に洗浄液が衝突するように噴出口を向けかつ垂直よ
りやや水平に傾けに所定の角度に傾け該洗浄液を噴射す
る洗浄ノズルと、この洗浄ノズルの該洗浄液の噴射と同
時に乾燥ガスを噴射するとともに前記洗浄ノズルの傾き
角度より水平に近い角度でガス噴射口を向けかつ前記洗
浄ノズルより内側に設けられているガス噴出ノズルを備
えることを特徴とするフォトレジスト現像装置。1. A substrate holding means for rotatably holding a glass substrate having a surface coated with a photoresist, a driving means for rotating and driving the substrate holding means, and a glass substrate held by the glass substrate holding means. A nozzle for dropping a developing solution onto the photoresist surface, wherein the developing solution is dropped on the glass substrate, the developing solution is applied, and the latent image is developed. A cleaning nozzle for injecting the cleaning liquid by injecting the cleaning liquid at a predetermined angle in such a manner that the cleaning liquid is directed so that the cleaning liquid collides with a part of the back surface of the side closest to the rotation center and close to the side, and is tilted slightly horizontally rather than vertically; The drying gas is injected at the same time as the injection of the cleaning liquid, and the gas injection port is directed at an angle closer to the horizontal than the inclination angle of the cleaning nozzle and inward of the cleaning nozzle. A photoresist developing apparatus comprising a gas ejection nozzle provided.
一体化する棒状の配管構成体を備えることを特徴とする
請求項１記載のフォトレジスト現像装置。2. The photoresist developing apparatus according to claim 1, further comprising a rod-shaped piping structure that integrates the cleaning nozzle and the gas injection nozzle.
でなるノズル対の複数個が円周上に配設されるリング状
の配管構成体を備えることを特徴とする請求項１記載の
フォトレジスト現像装置。3. The photoresist according to claim 1, further comprising a ring-shaped piping structure in which a plurality of nozzle pairs including the cleaning nozzle and the gas ejection nozzle are disposed on a circumference. Developing device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8326930A JP2891951B2 (en) | 1996-12-06 | 1996-12-06 | Photoresist developing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8326930A JP2891951B2 (en) | 1996-12-06 | 1996-12-06 | Photoresist developing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10172880A true JPH10172880A (en) | 1998-06-26 |
| JP2891951B2 JP2891951B2 (en) | 1999-05-17 |
Family
ID=18193360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8326930A Expired - Fee Related JP2891951B2 (en) | 1996-12-06 | 1996-12-06 | Photoresist developing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2891951B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002170805A (en) * | 2000-11-30 | 2002-06-14 | Takata Corp | Wafer cleaning equipment |
| US7679086B2 (en) | 2006-02-20 | 2010-03-16 | Seiko Epson Corporation | Method for manufacturing electro-optic device |
| KR101004433B1 (en) | 2008-11-10 | 2010-12-28 | 세메스 주식회사 | Nozzle assembly and substrate processing apparatus having the same |
| US8267103B2 (en) | 2006-06-12 | 2012-09-18 | Semes Co. Ltd | Method and apparatus for cleaning substrates |
| CN105304522A (en) * | 2014-07-29 | 2016-02-03 | 盛美半导体设备（上海）有限公司 | Silicon wafer back surface cleaning device |
| JP2021034731A (en) * | 2019-08-20 | 2021-03-01 | セメス カンパニー，リミテッド | Substrate processing equipment and substrate processing method |
| CN117423608A (en) * | 2022-07-11 | 2024-01-19 | 沈阳芯源微电子设备股份有限公司 | Control method of polymer material contamination on wafer backside during wafer coating with polymer materials |
-
1996
- 1996-12-06 JP JP8326930A patent/JP2891951B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002170805A (en) * | 2000-11-30 | 2002-06-14 | Takata Corp | Wafer cleaning equipment |
| US7679086B2 (en) | 2006-02-20 | 2010-03-16 | Seiko Epson Corporation | Method for manufacturing electro-optic device |
| US8267103B2 (en) | 2006-06-12 | 2012-09-18 | Semes Co. Ltd | Method and apparatus for cleaning substrates |
| KR101004433B1 (en) | 2008-11-10 | 2010-12-28 | 세메스 주식회사 | Nozzle assembly and substrate processing apparatus having the same |
| CN105304522A (en) * | 2014-07-29 | 2016-02-03 | 盛美半导体设备（上海）有限公司 | Silicon wafer back surface cleaning device |
| JP2021034731A (en) * | 2019-08-20 | 2021-03-01 | セメス カンパニー，リミテッド | Substrate processing equipment and substrate processing method |
| CN117423608A (en) * | 2022-07-11 | 2024-01-19 | 沈阳芯源微电子设备股份有限公司 | Control method of polymer material contamination on wafer backside during wafer coating with polymer materials |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2891951B2 (en) | 1999-05-17 |
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