JPH1017314A - Hydrophilic diamond crystal and method for producing the same - Google Patents

Hydrophilic diamond crystal and method for producing the same

Info

Publication number
JPH1017314A
JPH1017314A JP8169617A JP16961796A JPH1017314A JP H1017314 A JPH1017314 A JP H1017314A JP 8169617 A JP8169617 A JP 8169617A JP 16961796 A JP16961796 A JP 16961796A JP H1017314 A JPH1017314 A JP H1017314A
Authority
JP
Japan
Prior art keywords
diamond crystal
light
hydrophilized
hydrogen peroxide
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8169617A
Other languages
Japanese (ja)
Inventor
Yasumitsu Tsutsui
康充 筒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP8169617A priority Critical patent/JPH1017314A/en
Publication of JPH1017314A publication Critical patent/JPH1017314A/en
Withdrawn legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a diamond crystal which is imparted with hydrophilicity and is free from the disturbance in crystallinity by bringing a diamond crystal grown in a vapor phase into contact with an aq. hydrogen peroxide soln., then irradiating the soln. with light. SOLUTION: A thin layer 2 of the aq. hydrogen peroxide soln. of a concn. of >=1% is formed over the entire surface of the diamond crystal 1 grown in the vapor phase. Next, a pressing plate or sheet 3 consisting of a material having high light transmissivity and, if necessary, a mask 4 of prescribed pattern shapes are arranged thereon and, thereafter, the sheet and the mask are irradiated with light 6 of a wavelength of 100 to 300μm, by which OH groups are bonded to at least a part of the surface of the diamond crystal 1.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、親水化ダイヤモ
ンド結晶およびその製造方法に関するものであり、特
に、電子部品材料や工具材料ならびに医療用器具材料と
して用いられる親水化ダイヤモンド結晶およびその製造
方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hydrophilized diamond crystal and a method for producing the same, and more particularly, to a hydrophilized diamond crystal used as a material for electronic parts and tools and a material for medical instruments and a method for producing the same. It is.

【0002】[0002]

【従来の技術】従来、ダイヤモンド結晶表面を親水化す
る方法としては、たとえば、Jpn. J.Appl. Phys. Vol 3
2(1993)pp. 5829-5839 に開示されるように、酸素プ
ラズマ照射処理を利用する方法がある。
2. Description of the Related Art Conventionally, methods for making a diamond crystal surface hydrophilic include, for example, Jpn. J. Appl. Phys.
2 (1993) pp. 5829-5839, there is a method utilizing oxygen plasma irradiation treatment.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、このよ
うなプラズマ照射処理を利用する場合には、ダイヤモン
ド結晶を真空チャンバ内に入れて、バッチごとに処理を
行なう必要がある。そのため、親水化処理に手間がかか
るという問題があった。
However, when such a plasma irradiation process is used, it is necessary to put a diamond crystal in a vacuum chamber and perform the process for each batch. For this reason, there is a problem that the hydrophilic treatment takes time.

【0004】また、酸素プラズマは活性なため、プラズ
マ照射処理によって少なからず被照射物に損傷を与える
ことになる。そのため、酸素プラズマ照射処理は、ダイ
ヤモンド結晶の表面付近の結晶性に乱れを生じさせた
り、酸素プラズマにより容易に損傷を受ける材料との複
合材料の親水化処理には、適用できないという問題があ
った。
[0004] Further, since oxygen plasma is active, the object to be irradiated is damaged to some extent by the plasma irradiation treatment. Therefore, there is a problem that oxygen plasma irradiation treatment cannot be applied to hydrophilization treatment of a composite material with a material that causes disorder in crystallinity near the surface of the diamond crystal or is easily damaged by oxygen plasma. .

【0005】さらに、たとえば電子素子基板等に利用す
る場合には、めっきプロセスへつなげるために、ダイヤ
モンド結晶表面をパターン状に親水化処理する必要があ
る。このような場合には、プラズマ照射処理の前に、ダ
イヤモンド結晶表面にプラズマ遮蔽層をパターン状に形
成する必要がある。そのため、CVD、リソグラフィ、
エッチング等の多くの工程が必要になるという問題があ
った。
Further, when the diamond crystal surface is used for, for example, an electronic element substrate, it is necessary to hydrophilize the diamond crystal surface in a pattern in order to connect to a plating process. In such a case, it is necessary to form a plasma shielding layer on the diamond crystal surface in a pattern before the plasma irradiation treatment. Therefore, CVD, lithography,
There is a problem that many steps such as etching are required.

【0006】一方、従来、このような酸素プラズマ照射
処理により得られた親水化ダイヤモンド結晶は、酸化さ
れた表面であるため、十分な親水性が得られない場合が
あった。
On the other hand, heretofore, hydrophilized diamond crystals obtained by such oxygen plasma irradiation treatment have not been able to obtain sufficient hydrophilicity because of the oxidized surface.

【0007】この発明の目的は、結晶性の乱れのない親
水化ダイヤモンド結晶を提供することにある。また、こ
の発明のさらなる目的は、親水化ダイヤモンド結晶を、
損傷を与えることなく、簡便に製造できる方法を提供す
ることにある。
An object of the present invention is to provide a hydrophilized diamond crystal having no disorder in crystallinity. A further object of the present invention is to provide a hydrophilized diamond crystal,
An object of the present invention is to provide a method that can be easily manufactured without causing damage.

【0008】[0008]

【課題を解決するための手段】この発明による親水化ダ
イヤモンド結晶は、その表面の少なくとも一部に、OH
基が結合されている。OH基が結合されるのは、結晶の
表面の全部であってもよいし、その一部であってもよ
い。
The hydrophilized diamond crystal according to the present invention has OH on at least a part of its surface.
The group is attached. The OH group may be bonded to the entire surface of the crystal or a part thereof.

【0009】この発明によれば、表面に結合されたOH
基同士の水素結合が期待できるため、親水性の高いダイ
ヤモンド結晶が得られる。
According to the present invention, OH bound to the surface
Since hydrogen bonding between groups can be expected, a diamond crystal having high hydrophilicity can be obtained.

【0010】また、この発明による親水化ダイヤモンド
結晶の製造方法は、気相成長させたダイヤモンド結晶
に、過酸化水素水溶液を接触させるステップと、過酸化
水素水溶液に接触させたダイヤモンド結晶に、光を照射
するステップとを備えている。
Further, in the method for producing a hydrophilized diamond crystal according to the present invention, the step of contacting the vapor-grown diamond crystal with an aqueous hydrogen peroxide solution includes the steps of: Irradiating.

【0011】過酸化水素水溶液は、濃度が1%以上であ
れば、本発明の効果が得られると考えられる。
It is considered that the effect of the present invention can be obtained if the concentration of the aqueous hydrogen peroxide solution is 1% or more.

【0012】好ましくは、照射する光は、波長が100
nm以上300nm以下であるとよい。
Preferably, the light to be irradiated has a wavelength of 100
The thickness is preferably not less than 300 nm and not more than 300 nm.

【0013】なお、このような範囲の波長を有する光と
しては、たとえば、水銀ランプ光、エキシマランプ光、
エキシマレーザ光、シンクロトロン放射光、アンジュレ
ータ放射光等が挙げられる。
The light having a wavelength in such a range includes, for example, mercury lamp light, excimer lamp light,
Excimer laser light, synchrotron radiation, undulator radiation, and the like can be given.

【0014】この発明によれば、過酸化水素水を溶液中
で光分解することにより生成したOH基によって、気相
成長させたダイヤモンド結晶表面の水素原子が引抜か
れ、OH基の置換が行なわれると考えられる。その結
果、ダイヤモンド結晶基板に損傷を与えることなく、低
温で、かつ、真空チャンバを用いずに、簡便に親水化処
理を行なうことができる。
According to the present invention, the hydrogen atoms on the surface of the diamond crystal grown by vapor phase are extracted by the OH groups generated by photolysis of the aqueous hydrogen peroxide solution in the solution, and the OH groups are replaced. it is conceivable that. As a result, the hydrophilic treatment can be easily performed at a low temperature without using a vacuum chamber without damaging the diamond crystal substrate.

【0015】また、この発明によれば、表面に吸着、結
合しようとする官能基の特性を利用して親水化を行なう
ため、ダイヤモンド結晶表面付近の結晶性を乱すことな
く、結晶の形状も変化せず、結晶そのものの特性も損な
われない。
Further, according to the present invention, since the hydrophilization is carried out by utilizing the characteristics of the functional groups to be adsorbed and bonded to the surface, the crystal shape can be changed without disturbing the crystallinity near the diamond crystal surface. Without doing so, the properties of the crystal itself are not impaired.

【0016】また、この発明によれば、光を照射するス
テップにおいて、マスクを介して光を照射することによ
り、ダイヤモンド結晶表面をパターン状に親水化するこ
とができる。
Further, according to the present invention, in the step of irradiating light, the surface of the diamond crystal can be made hydrophilic in a pattern by irradiating the light through a mask.

【0017】マスクを介した光照射により、パターン状
に親水化された部分を直接ダイヤモンド結晶表面に描く
ことができるため、たとえば、その後に無電解めっき処
理を施すことにより、親水化された部分のみ金属膜が成
長し、簡便にパターンメタライズが実施できる。
[0017] Since the portion that has been made hydrophilic in a pattern can be directly drawn on the diamond crystal surface by light irradiation through a mask, for example, only the portion that has been made hydrophilic by performing an electroless plating process thereafter. A metal film grows and pattern metallization can be easily performed.

【0018】[0018]

【発明の実施の形態】図1は、本発明による親水化ダイ
ヤモンド結晶の製造方法の一例を示す断面図である。
FIG. 1 is a sectional view showing an example of a method for producing a hydrophilized diamond crystal according to the present invention.

【0019】図1を参照して、まず、気相成長させたダ
イヤモンド結晶1の表面全面に、10%過酸化水素水溶
液の薄い層2を形成した。次に、この上に、光透過率の
高い材料からなる押え板またはシート3を配置した。具
体的には、この押え板またはシート3としては、シリカ
ガラス板や、薄いポリイミド膜等を用いることができ
る。
Referring to FIG. 1, first, a thin layer 2 of a 10% hydrogen peroxide aqueous solution was formed on the entire surface of diamond crystal 1 grown by vapor phase. Next, a pressing plate or sheet 3 made of a material having a high light transmittance was disposed thereon. Specifically, a silica glass plate, a thin polyimide film, or the like can be used as the holding plate or sheet 3.

【0020】続いて、所定のパターン形状のマスク4を
被せた上から、窓5を介して光6を照射した。窓5の材
料としては、照射する光6の波長に応じて、光透過率の
高い材料を用いることができ、具体的には、たとえば、
シリカガラスやLiF等を用いることができる。
Subsequently, light 6 was irradiated through a window 5 from above a mask 4 having a predetermined pattern shape. As the material of the window 5, a material having a high light transmittance can be used according to the wavelength of the light 6 to be irradiated.
Silica glass, LiF, or the like can be used.

【0021】なお、被照射物であるダイヤモンド結晶1
は、必ずしも板状のものである必要はなく、たとえば、
ナイフのような加工成形品であってもよい。
The object to be irradiated, the diamond crystal 1
Need not necessarily be plate-like, for example,
It may be a processed product such as a knife.

【0022】[0022]

【実施例】図1に示すように、気相合成ダイヤモンド基
板に対し、波長選択が自由なシンクロトロン放射光を照
射することにより、本願発明の効果を確認した。
EXAMPLE As shown in FIG. 1, the effect of the present invention was confirmed by irradiating a synchrotron radiation having a free wavelength to a vapor-phase synthetic diamond substrate.

【0023】その結果、過酸化水素がOHに分解し始め
る波長300nm付近から表面親水化効果が現われ、た
とえば、波長175nmの照射では、ダイヤモンド結晶
表面の水滴の接触角が90°から約40°まで低下し
た。
As a result, a surface hydrophilizing effect appears at a wavelength of about 300 nm at which hydrogen peroxide starts to be decomposed into OH. For example, with irradiation at a wavelength of 175 nm, the contact angle of water droplets on the diamond crystal surface is increased from 90 ° to about 40 ° Dropped.

【0024】この結果から、気相合成ダイヤモンド結晶
表面に結合した撥水性の原因となるH原子が、過酸化水
素の光分解で生じたOH基により引抜かれ、さらにOH
基が置換、結合して、親水性が高まったものと考えられ
る。
From these results, it was found that H atoms, which are bonded to the surface of the vapor-phase synthesized diamond crystal and cause water repellency, were extracted by OH groups generated by the photolysis of hydrogen peroxide, and OH groups were further removed.
It is considered that the groups were substituted and bonded to increase the hydrophilicity.

【0025】以上の効果は、十分な光量を透過できる窓
材が存在する波長約100nmまで確認された。
The above effects were confirmed up to a wavelength of about 100 nm where a window material capable of transmitting a sufficient amount of light exists.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明による親水化ダイヤモンド結晶の製造方
法の一例を示す断面図である。
FIG. 1 is a sectional view showing an example of a method for producing a hydrophilized diamond crystal according to the present invention.

【符号の説明】[Explanation of symbols]

1 ダイヤモンド結晶 2 過酸化水素水溶液層 3 押え板またはシート 4 マスク 5 窓 6 光 DESCRIPTION OF SYMBOLS 1 Diamond crystal 2 Hydrogen peroxide aqueous solution layer 3 Holding plate or sheet 4 Mask 5 Window 6 Light

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 その表面の少なくとも一部にOH基が結
合された、親水化ダイヤモンド結晶。
1. A hydrophilized diamond crystal having an OH group bonded to at least a part of its surface.
【請求項2】 気相成長させたダイヤモンド結晶に、過
酸化水素水溶液を接触させるステップと、 前記過酸化水素水溶液に接触させたダイヤモンド結晶
に、光を照射するステップとを備える、親水化ダイヤモ
ンド結晶の製造方法。
2. A hydrophilized diamond crystal, comprising: contacting an aqueous hydrogen peroxide solution with a diamond crystal grown in a vapor phase; and irradiating the diamond crystal brought into contact with the aqueous hydrogen peroxide solution with light. Manufacturing method.
【請求項3】 前記光は、波長が100nm以上300
nm以下であることを特徴とする、請求項2記載の親水
化ダイヤモンド結晶の製造方法。
3. The light having a wavelength of 100 nm or more and 300 or more.
3. The method for producing a hydrophilized diamond crystal according to claim 2, wherein the diameter is not more than nm.
【請求項4】 前記光を照射するステップは、マスクを
介して光を照射することにより、ダイヤモンド結晶表面
をパターン状に親水化することを特徴とする、請求項2
または請求項3のいずれかに記載の親水化ダイヤモンド
結晶の製造方法。
4. The step of irradiating the light includes irradiating light through a mask to make the diamond crystal surface hydrophilic in a pattern.
4. A method for producing a hydrophilized diamond crystal according to claim 3.
JP8169617A 1996-06-28 1996-06-28 Hydrophilic diamond crystal and method for producing the same Withdrawn JPH1017314A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8169617A JPH1017314A (en) 1996-06-28 1996-06-28 Hydrophilic diamond crystal and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8169617A JPH1017314A (en) 1996-06-28 1996-06-28 Hydrophilic diamond crystal and method for producing the same

Publications (1)

Publication Number Publication Date
JPH1017314A true JPH1017314A (en) 1998-01-20

Family

ID=15889826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8169617A Withdrawn JPH1017314A (en) 1996-06-28 1996-06-28 Hydrophilic diamond crystal and method for producing the same

Country Status (1)

Country Link
JP (1) JPH1017314A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001046493A1 (en) * 1999-12-21 2001-06-28 Gyros Ab Polycrystalline diamond microstructures
CN102435642A (en) * 2011-08-30 2012-05-02 广州市德百顺电气科技有限公司 Humidity sensor and its preparation method
CN102432003A (en) * 2011-08-30 2012-05-02 广州市德百顺电气科技有限公司 Surface-modified nano diamond particles and preparation method and application thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001046493A1 (en) * 1999-12-21 2001-06-28 Gyros Ab Polycrystalline diamond microstructures
CN102435642A (en) * 2011-08-30 2012-05-02 广州市德百顺电气科技有限公司 Humidity sensor and its preparation method
CN102432003A (en) * 2011-08-30 2012-05-02 广州市德百顺电气科技有限公司 Surface-modified nano diamond particles and preparation method and application thereof

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