JPH10200009A - Lead frame member and method of manufacturing lead frame member - Google Patents

Abstract

(57) [Problem] To provide a lead frame member for a BGA type resin-encapsulated semiconductor device using a lead frame as a core material. Further, a lead frame member capable of manufacturing a highly reliable semiconductor device is provided. At the same time, a method of manufacturing the same is provided. A lead frame member for a BGA type resin-encapsulated semiconductor device, which is electrically connected to a die pad portion for mounting a semiconductor element and a terminal (pad) of the semiconductor element by a bonding wire. Inner leads, external terminals integrally connected to the respective inner leads, and external terminals for making an electrical connection, and an outer peripheral portion outside the semiconductor device fabrication region on the outer periphery thereof, and the outer peripheral portion is formed by plating. And a heat-resistant insulating material portion that covers one surface of the lead frame portion with an opening so as to expose the external terminal region, extends to the outer peripheral portion, and a conductive material that supports these. Frame, which is provided so as to fix the outer peripheral portion on the other surface side of the lead frame.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention belongs to the technical field of semiconductor devices, and more particularly, to a lead frame member for a BGA type resin-sealed semiconductor device having a lead frame portion formed by plating, and its manufacture. About the method.

[0002]

2. Description of the Related Art In recent years, with the trend toward higher performance of electronic devices and lighter, thinner and smaller electronic devices, LSIs, as typified by ASICs, have been increasingly integrated and functionalized. Along with this, the switching noise inside the package cannot be ignored for high-speed signal processing. In particular, the simultaneous switching noise of the IC has a large effect on the effective inductance of the wiring inside the package. We have responded to this by increasing the number of power supplies and grounds. As a result, higher integration and higher functionality of the semiconductor device have led to an increase in the total number of external terminals (pins), and a demand for a multi-terminal semiconductor device has been required. Multi-terminal I
C, especially an ASIC represented by a gate array or a standard cell, a microcomputer, a DSP (Digital
Plastic QFP (Quad) using a lead frame as a package for providing a user with a high cost performance such as a Signal Processor
Flat Package) has become mainstream, and currently 3
It has been put to practical use up to more than 00 pins.

[0005] The QFP uses a single-layer lead frame 810 shown in FIG. 8B. As shown in FIG. 8A, a semiconductor element 820 is mounted on a die pad 811.
Inner lead 812 with surface treatment such as silver plating
A wire 83 is connected to the tip end and the terminal 821 of the semiconductor element 820.
0, and sealing is performed with a sealing resin 840. Thereafter, the dam bar portion 814 is cut, and the outer leads 81 are cut.
3 is formed into a gull-wing shape. As described above, the QFP has been developed as a structure in which the outer leads 813 for electrically connecting to an external circuit are provided in four directions of the package and which can cope with the increase in the number of terminals. The single-layer lead frame 810 used here usually has
As shown in FIG. 8B, a metal material having a high electric conductivity and a high mechanical strength, such as an alloy (42% nickel-iron alloy) or a copper alloy, is used as a material, and a photo-etching method or a stamping method is used. It was made into a shape. 8 (b) and (b) correspond to F1 in FIGS. 8 (b) and (b).
14 shows a cross section at −F2.

However, the speed of signal processing of semiconductor devices has been increased,
Higher functionality has required more terminals. In the QFP, the external terminal pitch has been narrowed to accommodate multiple terminals without increasing the package size. However, with the narrower external terminal pitch, the width of the external terminals themselves has been reduced, and the strength of the external terminals has been reduced. Therefore, it is difficult to cope with the skew of the outer leads and to maintain coplanarity (flatness) in a post-process such as forming, and there is a problem in mounting that it is difficult to maintain package mounting accuracy in mounting.

To cope with such a problem in mounting the QFP, a BGA (Ball Grid Array) is used.
A plastic package called a has been developed.
In this BGA, usually, a semiconductor element is mounted on one surface of a double-sided substrate, and spherical solder balls are two-dimensionally arranged on the other surface as external terminals of a package. ), And is a package that is compatible with mountability. B
The GA has the advantage that the external terminal interval (pitch) can be increased even with the same number of external terminals as compared with the QFP in which external terminals are provided on four sides of the package. Was able to respond. BGA is
Generally, it has a structure as shown in FIG. FIG. 5B shows FIG.
FIG. 5A is a view from the back (substrate) side, and FIG. 5C shows a through hole 550 portion. The BGA includes a die pad 505 on which a semiconductor element 501 is mounted on one surface of a base plate 502 of a heat-resistant flat plate (resin plate) represented by BT resin (bismaleimide resin) and a semiconductor element 50.
1 has a bonding pad 510 electrically connected by a bonding wire 508, and has, on the other surface, half-balls arranged in a grid or staggered pattern for making electrical and physical connection between an external circuit and a semiconductor device. The external connection terminal 506 is formed by
And a bonding pad 510 are electrically connected by a wiring 504, a through hole 550, and a wiring 504A. However, in this BGA, a circuit for connecting a semiconductor element to be mounted and a wire, and external terminals (solder balls) for mounting on a printed circuit board after being made into a semiconductor device are provided on both sides of the substrate 502, and these are provided through holes. This is a complicated structure that is electrically connected via 550, and the length of a circuit through which a signal passes increases, and its circuit design is also complicated. In addition, the process of manufacturing a substrate for a conventional plastic BGA composed of a heat-resistant and insulating resin base material is based on conventional printed circuit boards such as punching holes in a resin base material, conducting plating of front and back circuits, and solder resist printing. A similar process is required, and it is inevitably a long process as a whole. In addition, there are many restrictions on a circuit process for realizing high density, and it is difficult to manufacture at low cost. and again,
The through hole 550 may be broken due to the effect of the thermal expansion of the resin, and there are many problems in terms of reliability in manufacturing.

For this reason, in order to avoid the simplification of the manufacturing process and the reduction in reliability, in addition to the structure shown in FIG.
A has also been proposed in recent years. In general, a BGA package using these lead frames is formed by fixing a lead frame 610 on an insulating film 660 in which a predetermined hole is formed at a position corresponding to the external terminal portion 614 of the lead frame 610, and sealing the resin with a resin. The structure shown in FIG. 6A or the structure shown in FIG. The lead frame 610 used for the BGA package using the lead frame is conventionally manufactured by an etching method as shown in FIG. 7, and both the external terminal portion 614 and the inner lead 612 are manufactured to the thickness of the lead frame material. I was In FIG. 6, 620 is a semiconductor element, 621 is a terminal of the semiconductor element, 640 is a sealing resin, 650 is an external terminal electrode (solder ball), and 611 is a die pad. Here, the etching method shown in FIG. 7 will be briefly described. First, copper alloy or 42
A thin plate (lead frame material 710) of about 0.25 mm made of a nickel-iron alloy is sufficiently washed (FIG. 7).
After (a)), a photoresist 720 such as a water-soluble casein resist using potassium dichromate as a photosensitive agent is uniformly applied to both surfaces of the thin plate. (FIG. 7B) Next, after exposing the resist portion with a high-pressure mercury lamp through a mask on which a predetermined pattern is formed, the photosensitive resist is developed with a predetermined developing solution (FIG. 7C). ), A resist pattern 730 is formed, a hardening process, a cleaning process, and the like are performed as necessary. The thin plate (lead frame material 710) is sprayed with an etching solution containing a ferric chloride aqueous solution as a main component. Spraying Etching to predetermined dimensions and shape,
Let through. (FIG. 7 (d)) Next, the resist film is subjected to a film removing treatment (FIG. 7 (e)). After cleaning, a desired lead frame is obtained, and the etching process is completed. As described above, the lead frame manufactured by etching or the like is further provided with silver plating or the like in a predetermined area. Then, through processes such as washing and drying, taping the inner lead portion with a polyimide tape with an adhesive for fixing, bending the tab hanging bar by a predetermined amount as necessary, and down-setting the die pad portion Perform the following processing. However, since the corrosion due to the etching solution proceeds not only in the thickness direction of the processed plate but also in the plate width (plane) direction, the etching method shown in FIG.
Regarding miniaturization, there is a limit due to the thickness of the material to be processed.

On the other hand, it is technically possible to further increase the number of terminals (narrow pitch) by reducing the thickness of the board as much as possible, but in this case, the wiring itself has a mechanical strength. And a process such as attaching a wiring to a plate-like support is required, and there is a problem that a more complicated process is required for manufacturing a practical product.

[0008]

As described above, in a BGA type resin-sealed semiconductor device using a lead frame as a core material, a semiconductor device using a single-layer lead frame shown in FIG. As compared with, the external terminal pitch for connecting to an external circuit with the same number of terminals can be widened, and the number of input / output terminals can be increased without complicating the semiconductor device mounting process. In response to such demands, it is essential to reduce the pitch of the inner leads and to provide high-density wiring. SUMMARY OF THE INVENTION The present invention is directed to a lead frame member for a BGA type resin-sealed semiconductor device using a lead frame as a core material. And a lead frame member capable of manufacturing a highly reliable semiconductor device. At the same time, an object is to provide a method for manufacturing such a lead frame member.

[0009]

SUMMARY OF THE INVENTION A lead frame member of the present invention is a lead frame member for a BGA type resin-sealed semiconductor device, and includes a die pad portion for mounting a semiconductor element, and a terminal of the semiconductor element. Inner leads for electrically connecting to the (pads) with bonding wires, external terminals for making an electrical connection to an external circuit integrally connected to each inner lead, and a semiconductor device fabrication area around these outer leads An outer peripheral portion is provided outside, and a lead frame portion formed planarly by plating, and one surface of the lead frame portion is provided with an opening so as to expose an external terminal region, and is covered by the outer peripheral portion. A heat-resistant insulating material portion, and a conductive frame body that supports the heat-resistant insulating material portion, and the frame body is provided so as to fix the outer peripheral portion on the other surface side of the lead frame. It is characterized in. In the above, the external terminal region exposed from the opening of the heat-resistant insulating material is subjected to a plating process for forming a solder ball. Further, in the above, the heat-resistant insulating material comprises a solder resist.

A method for manufacturing a lead frame member according to the present invention is a method for manufacturing a lead frame member for a BGA type resin-sealed semiconductor device.
(A) A resist is applied to both sides of the conductive substrate, a resist is formed on the first surface, and a die pad portion for mounting a semiconductor element by plating on the exposed conductive substrate surface;
Inner leads for electrically connecting to the terminals (pads) of the semiconductor element with bonding wires; external terminals for making an electrical connection to an external circuit integrally connected to each inner lead; Forming a lead frame portion having an outer peripheral portion outside the semiconductor device fabrication region; and (B) covering the plated first surface of the conductive substrate with a photosensitive heat-resistant insulating material; Making a plate to provide an opening so as to expose the external terminal region of the lead frame; and (C) making a plate of the resist covered on the entire second surface of the conductive substrate other than the plating surface side, and forming the entirety. The method is characterized by comprising a step of etching and removing the conductive substrate from the entire second surface while leaving a supporting frame, and a step of (D) removing the remaining resist part.
In the above, after the step of covering the plated first surface of the conductive substrate with a photosensitive heat-resistant insulating material and performing plate making to provide an opening so as to expose the external terminal region of the lead frame, A step of plating only the external terminal portions for solder ball connection. Further, the photosensitive heat-resistant insulating material described above is a solder resist. Further, the above-mentioned resist is a dry film resist.

[0011]

According to the lead frame member of the present invention having such a structure, a BGA type resin-encapsulated semiconductor device using a lead frame as a core material capable of further increasing the number of terminals and providing high-density wiring can be manufactured. Is made possible. Specifically, a die pad portion for mounting a semiconductor element,
Inner leads for electrically connecting to the terminals (pads) of the semiconductor element with bonding wires; external terminals for making an electrical connection to an external circuit integrally connected to each inner lead; An outer peripheral portion provided outside the semiconductor device manufacturing region, and a lead frame portion formed in a planar manner by plating, and one surface of the lead frame portion is provided with an opening so as to expose an external terminal region, and is covered. It has a heat-resistant insulating material portion extending to the outer peripheral portion, and a conductive frame that supports them, and the frame is provided so as to fix the outer peripheral portion on the other surface side of the lead frame. Has achieved this.

According to the method of manufacturing a lead frame member of the present invention, by adopting the above-described structure, it is possible to cope with a further increase in the number of terminals of a semiconductor device, high-density wiring, and reliability by a relatively simple method. It is possible to provide a method for manufacturing a lead frame member that can manufacture a highly reliable semiconductor device.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to the drawings. FIG. 1A is a cross-sectional view showing one section of the lead frame member of the present invention, and FIG. 1B is a plan view of the lead frame member of the present invention. 2
(B) shows an example of a lead frame portion formed by plating the lead frame member of the present invention, and is a schematic plan view showing an enlarged portion of about 1/4 of the whole. 1B is a diagram viewed from the A0 side in FIG. 1A, and FIG. 1A is a simplified cross-section taken along line A1-A2 in FIG. 1B. The dotted line in FIG. 1 (b) indicates the inner boundary of the frame 130, and the outer portions of the dotted lines B1-B2 and B3-B4 in FIG. In FIG.
The number and arrangement of the external terminals are simplified for easy understanding. 1 and 2, 100 is a lead frame member, 110 is a lead frame portion, 111 is a die pad, 112 is an inner lead, 112A is a tip of an inner lead, 113 is an external terminal, 114 is an outer peripheral portion, and 120 is a heat-resistant insulating material. Part, 121 is an opening, 130 is a frame, 14
Numeral 0 denotes plating for connecting a solder ball.

First, the lead frame member of the present invention will be described. The lead frame member 100 of the present invention is a lead frame member for a BGA type resin-encapsulated semiconductor device, and as shown in FIG. 1, a die pad 111 for mounting a semiconductor element and a terminal of the semiconductor element ( Inner lead 112 for electrically connecting to the pad) by a bonding wire, and external terminal 113 for making an electrical connection to an external circuit integrally connected to each inner lead.
And an outer peripheral portion separated from the outer periphery of the semiconductor device manufacturing region on the outer periphery thereof, and has a lead frame portion 110 formed two-dimensionally by plating. A heat-resistant insulating material portion 120 having an opening 121 is provided along one surface of the lead frame portion 110 so as to expose a region of the external terminal 113, and a conductive frame 130 supporting these portions. I have. The frame 130 is provided so as to fix the outer peripheral portion 114 on the other surface side of the lead frame portion 110. The opening 1 of the heat-resistant insulating material portion 120
In the area of the external terminals 113 exposed from 21, if necessary, plating 1 for solder ball connection at the time of manufacturing a semiconductor device may be used.
Apply 40.

FIG. 2 shows a lead frame member 10 of the present invention.
FIG. 2A shows an example of a lead frame portion 110 formed by plating, and as shown in FIG. 2A, a cross-sectional shape when an outer peripheral portion 114 is provided by being connected to an external terminal 113 is shown in FIG. The shape is as shown in FIG. FIG. 2 (b)
In the case of the shape shown in FIG. 7, the external terminal 113 and the outer peripheral portion are not connected. Lead frame member 100 of the present invention
Has a configuration in which the external terminals 113 of the lead frame portion 110 are two-dimensionally provided to increase the number of external terminals, and the entire lead frame is formed by plating.
By manufacturing by the manufacturing method of the lead frame member of the present invention described later, it is possible to manufacture the space between the inner lead tips 112A at a narrow pitch. And
The lead frame member of the present invention is a state in which the thin lead frame portion 110 formed by plating is planarly supported by the heat resistant insulating material portion 120, and the heat resistant insulating material portion 120 is directly connected to the semiconductor device. Department.
Inner lead 112, external terminal 113, die pad 1
11 is securely supported. In the end, the lead frame member of the present invention has more terminals, higher density wiring, and
It is possible to manufacture a highly reliable BGA type semiconductor device.

The lead frame portion 110 is preferably formed by copper plating to form a wiring portion, but may be formed by laminating a nickel plated portion or the like as a base plating. 5μm for the thickness of the copper plating
It is preferably in the range of ２０20 μm. Heat resistant insulating material section 120
Is capable of holding the lead frame portion 110 in a planar manner, and is used as it is at the time of manufacturing a semiconductor, and therefore needs to withstand resin sealing. In order to manufacture the frame body 130 by a method shown in FIG.
In addition, it is necessary to be able to hold the heat-resistant insulating material portion 120, but the material is not particularly limited.

Next, a method for manufacturing a lead frame member of the present invention will be described with reference to FIG. FIG. 3 is a cross-sectional view showing the steps of a method for manufacturing a lead frame member according to the present invention. In FIG. 3, 300 is a lead frame member, 310 is a conductive substrate, 320 is a resist film, 330 is a lead frame portion,
331 is a die pad, 332 is an inner lead, 333
Is an external terminal, 334 is an outer peripheral portion, 340 is a heat-resistant insulator,
341 is an opening, 350 is plating for solder ball connection, 3
Reference numeral 60 denotes a frame. First, a conductive plate 310 for forming a frame for supporting the lead frame member is prepared. (FIG. 3A) After the conductive substrate 310 is subjected to degreasing, cleaning, and the like, a resist film 320 is formed on both surfaces. (FIG. 3B) Next, the resist film 3 on one side of the conductive substrate 310 is formed.
After making a plate 20 to expose only a predetermined region of the conductive substrate 310 (FIG. 3C), the exposed region of the conductive substrate 310 is subjected to electrolytic plating with copper plating to mount a semiconductor element. Die pads 331, inner leads 332 for electrically connecting to terminals (pads) of the semiconductor element with bonding wires, and each inner lead 3.
An external terminal 333 for making an electrical connection with an external circuit integrally connected to the external device 32 and an outer peripheral portion 334 separated from the external terminal 333 are formed on the outer periphery of the semiconductor device fabrication region. . (FIG. 3D) Next, the entire copper-plated surface of the conductive substrate 310 is covered with a photosensitive heat-resistant insulator 340 (FIG. 3D).
(E)) After plate making, an opening 341 is provided so as to expose only the external terminal 333 of the lead frame 330 (FIG. 3 (f)), and then only the external terminal 333 is used for solder ball connection. Plating 350 is applied. (FIG. 3 (g)) Palladium plating, gold plating, silver plating or the like is generally used as the plating 350 for solder ball connection.
In addition, base plating of these plating is performed as needed.
In some cases, only nickel plating may be used. Thereafter, a resist film 320 covering the entire surface of the conductive substrate 310 other than the plating surface is subjected to plate making (FIG. 3).
(H), the exposed conductive substrate 210 is etched to leave only the frame 360 for supporting the whole and remove the others. (FIG. 3 (i)) Next, the remaining resist 320 is removed to obtain the lead frame member 300. (FIG. 3 (j))

[0018]

EXAMPLES The present invention will be described in further detail with reference to examples. First, an embodiment of the lead frame member of the present invention will be described with reference to FIG. As the conductive substrate 310, a copper alloy having a thickness of 0.1 mm (model number EF manufactured by Furukawa Electric Co., Ltd.)
Using TEC64T-1 / 2) (FIG. 3 (a)), on both surfaces of the conductive substrate 310, a 22 μm-thick dry film resist manufactured by Hitachi Chemical Co., Ltd., Photek SR-3
000 was laminated to form a resist film 320 (FIG. 3B), and an opening 321 having a predetermined shape was provided by plate making. (FIG. 3 (c)) Next, a copper sulfate pentahydrate concentration of 70 g / l and a sulfuric acid concentration of 20
To a bath composition of 0 g / l and a chloride concentration of 60 ppm, add a brightener Toprutina manufactured by Okuno Pharmaceutical Co., Ltd.
Then, electrolytic plating is performed using the conductive substrate 210 as an electrode, and a thickness of 20 μm including a die pad 331, an inner lead 332, an external terminal 333, and an outer peripheral portion 334.
Was formed by copper plating.
(FIG. 3D) The copper plating conditions including the bath composition are not limited to these. Next, a solder resist 222 having a viscosity of 50,000 cps manufactured by Okuno Pharmaceutical Co., Ltd. is used as the heat-resistant insulator 340 having photosensitivity, and the thickness thereof is screen-printed so as to cover the entire side of the conductive substrate 310 where the lead frame portion 330 is formed. A film was formed at 30. (FIG. 3E) Then, an opening 341 through which only the external terminals 313 of the lead frame portion 330 are exposed is provided by plate making (FIG. 3E).
(F)), after nickel plating as a base plating,
Palladium plating 350 for solder ball connection was applied thereon. (FIG. 3 (g)) As a nickel plating solution, nickel plating WHN manufactured by Nippon Kojundo Chemical Co., Ltd. was used to form a 2 μm-thick film at a liquid temperature of 50 ° C. As the palladium plating solution, a 0.3 μm-thick film was formed at a solution temperature of 60 ° C. using a palladium plating solution Parabright SST manufactured by Nippon Kojundo Chemical Co., Ltd. The plating for connecting the solder balls is not limited to palladium plating, but gold, silver or the like may be used. The plating thickness is not limited to this, and the photosensitive heat-resistant insulator 3
It can be arbitrarily selected according to the thickness of 40. Next, the resist 320 on the surface of the conductive substrate 310 which is not on the side where the lead frame portion 330 is formed is made (FIG. 3 (h)), and a ferric chloride solution having a liquid temperature of 50 ° C. and a liquid specific gravity of 46 Baume is used as an etchant. Then, all the exposed portions of the conductive substrate 310 were removed by etching, leaving the frame 360 for supporting the whole, leaving the lead frame portion. (FIG. 3 (i)) Next, cleaning and removal of the resist film were performed to obtain a lead frame member 300 capable of securely supporting the lead frame portion 330 formed by plating in a planar manner. (FIG. 3
(J)) The resist was removed at 50 ° C. using a 3% sodium hydroxide solution.

In this embodiment, since the conductive substrate 310 is made of a copper alloy and the lead frame portion 330 is made of plated copper, the amount of etching of the lead frame portion 330 is controlled here so that the conductive substrate 310 is made of plated copper. Although the entry of etching into the lead frame portion 330 is restricted, for example, nickel plating is applied to the base on the conductive substrate 310, and then the lead frame portion 3 is formed by copper plating.
If the base 30 is prepared in advance and the underlying nickel plating is used as a barrier layer when the conductive substrate 310 is etched with a copper chloride solution, it is not necessary to restrict the entry of etching exactly as in the embodiment.

Next, an embodiment of the lead frame member of the present invention will be described with reference to FIGS. The lead frame member of the embodiment is manufactured by the method of manufacturing the lead frame member of the above embodiment, and the lead frame portion 11
Numeral 0 is made of plated copper having a thickness of 20 μm, and a heat-resistant insulator 120 having a thickness of 30 made of a solder resist 222 manufactured by Okuno Pharmaceutical Co., Ltd. Outer peripheral part 11 not on the side
4 is a 0.10 mm thick copper alloy (made by Furukawa Electric Co., Ltd.
EFTEC64T-1 / 2). Opening 121 of heat resistant insulator 120
Sets the external terminal 113 of the lead frame unit 110 to 2 μm
Thick nickel plating is applied to expose.

Next, a method of manufacturing a BGA type semiconductor device using the lead frame member of the present invention will be briefly described with reference to FIG. A lead frame member 100 of the present invention shown in FIG. 1 is prepared (FIG. 4A), a semiconductor element 410 is mounted on a die pad 111 of a lead frame part 110, and a terminal (pad) 411 of the semiconductor element and a tip of an inner lead are provided. Are electrically connected by wires 420. (FIG. 4B) Then, the semiconductor element 41 is formed by using a mold 430.
Only one surface side of the lead frame member 100 is sealed with the sealing resin 440 so as to surround the 0, the wire 420, and the lead frame portion 110 together with the heat resistant insulating portion 120. (FIG. 4C) After that, the frame 130 together with the outer peripheral portion 114 of the lead frame portion 110 is removed by pressing or the like. (FIG. 4
(D) Next, on the other surface side of the lead frame member 100, an external electrode 450 made of a solder ball is provided on the external terminal 113 exposed from the opening 121 of the heat resistant insulating material portion 120. (FIG. 4E) The solder balls forming the external electrodes 450 are made of a conductive metal mainly composed of tin and lead. In this way,
A BGA type resin-sealed semiconductor device 400 is manufactured.

[0022]

As described above, the present invention relates to a lead frame member for a BGA-type resin-encapsulated semiconductor device using a lead frame as a core material. It is possible to provide a lead frame member that can be manufactured and can manufacture a highly reliable semiconductor device, and at the same time, it is possible to provide a method of manufacturing the lead frame member. As a result, further multi-terminal,
It is possible to provide a BGA type resin-encapsulated semiconductor device that can cope with high density.

[Brief description of the drawings]

FIG. 1 is a schematic view showing a lead frame member of the present invention.

FIG. 2 is a schematic view showing a part of a lead frame portion of the lead frame member of the present invention.

FIG. 3 is a process diagram showing a method for manufacturing a lead frame member of the present invention.

FIG. 4 is a process diagram showing a method for manufacturing a semiconductor device using the lead frame member of the present invention.

FIG. 5 is a diagram for explaining a conventional BGA.

FIG. 6 is a view for explaining a BGA using a conventional lead frame as a core material.

FIG. 7 is a process chart of a conventional lead frame manufacturing method.

FIG. 8 is a view for explaining a conventional resin-encapsulated semiconductor device and a single-layer lead frame.

[Explanation of symbols]

REFERENCE SIGNS LIST 100 Lead frame member 110 Lead frame part 111 Die pad 112 Inner lead 112A Inner lead tip 113 External terminal 114 Outer peripheral part 120 Heat resistant insulating material part 121 Opening 130 Frame body 140 Plating for solder ball connection 300 Lead frame member 310 Conductive substrate 320 Resist film 330 Lead frame part 331 Die pad 332 Inner lead 333 External terminal 334 Peripheral part 340 Heat resistant insulating material 341 Opening 350 Plating for solder ball connection 360 Frame body 400 Semiconductor device 410 Semiconductor element 411 Terminal (bump) 420 Wire 430 Gold Mold 440 Sealing resin 450 External electrode 501 Semiconductor element 502 Base material 503 Mold resin 504, 504A Wiring 505 Die pad 508 Bondy Wire 506 External connection terminal 518 Plating part 550 Through hole 551 Thermal conductive via 600, 600A Semiconductor device 610 Lead frame 611 Die pad 612 Inner lead 614 External terminal part 620 Semiconductor element 621 Terminal of semiconductor element 640 Sealing resin 650 External terminal electrode ( 660 Insulating film 710 Lead frame material 720 Photoresist 730 Resist pattern 740 Inner lead 800 Semiconductor device 810 (Single layer) lead frame 811 Die pad 812 Inner lead 813 Outer lead 814 Dam bar 815 Frame (frame) section 820 Semiconductor element 821 Electrode Section (pad) 830 wire 840 sealing resin

Claims (7)

[Claims] 1. A lead frame member for a BGA type resin-encapsulated semiconductor device, comprising: a die pad portion for mounting a semiconductor element; and a die pad for electrically connecting to a terminal of the semiconductor element by a bonding wire. An inner lead, an external terminal integrally connected to each inner lead, an external terminal for making an electrical connection, and an outer peripheral portion outside the semiconductor device manufacturing region on the outer periphery thereof, and formed in a planar manner by plating. And a heat-resistant insulating material portion that covers one surface of the lead frame portion by providing an opening so as to expose the external terminal region, the heat-resistant insulating material portion extending to the outer peripheral portion, and a conductive material that supports them. A lead frame member, comprising: a frame, wherein the frame is provided so as to fix an outer peripheral portion on the other surface side of the lead frame. 2. The lead frame member according to claim 1, wherein the external terminal region exposed from the opening of the heat-resistant insulating material is subjected to a plating process for forming a solder ball. 3. The lead frame member according to claim 1, wherein the heat-resistant insulating material portion is made of a solder resist. 4. A method of manufacturing a lead frame member for a BGA type resin-sealed semiconductor device, comprising: (A) applying a resist on both surfaces of a conductive substrate at least in order; A die pad portion for mounting a semiconductor element by plating on the exposed conductive substrate surface, and inner leads for electrically connecting to terminals (pads) of the semiconductor element with bonding wires. (B) forming a lead frame portion having an external terminal for making electrical connection with an external circuit integrally connected to the inner lead, and an outer peripheral portion outside the semiconductor device fabrication region on the outer periphery thereof; (C) covering the plated first surface side of the conductive substrate with a photosensitive heat-resistant insulating material, making a plate, and providing an opening to expose an external terminal region of the lead frame; 2.) Making a plate of the resist covered on the entire second surface other than the plating surface side of the conductive substrate, leaving the frame portion for supporting the whole, and etching away the conductive substrate from the entire second surface. And (D) a step of removing the remaining resist portion. 5. The method according to claim 4, wherein the plated first surface of the conductive substrate is covered with a photosensitive heat-resistant insulating material, and the plate is made to expose an external terminal region of the lead frame. A method for manufacturing a lead frame member, comprising, after the step of providing an opening, a step of plating only external terminal portions for solder ball connection. 6. A method for manufacturing a lead frame member according to claim 5, wherein the photosensitive heat-resistant insulating material is a solder resist. 7. A method for manufacturing a lead frame member according to claim 5, wherein the resist is a dry film resist.