JPH10200211A - Compound semiconductor layer growth method and vapor phase growth apparatus - Google Patents

Abstract

(57) Abstract: In a case where a group III-V compound semiconductor layer is grown on a substrate and then a group II-VI compound semiconductor layer is grown thereon, the group III-V compound semiconductor layer and I
Provided is a method for growing a compound semiconductor layer, which can significantly reduce stacking faults generated from an interface with an I-VI compound semiconductor layer, and a vapor phase growth apparatus used for the method. After growing a group III-V compound semiconductor layer on a substrate in a first growth chamber by MBE or MOCVD, the substrate is transported to a second growth chamber through a transport path. In this second growth chamber 2, III
When growing the II-VI compound semiconductor layer on the group V compound semiconductor layer by the MBE method or the MOCVD method, the temperature of the substrate 5 during transportation is kept at 300 ° C. or more and 570 ° C. or less, and the second growth Before starting the growth of the II-VI compound semiconductor layer in the chamber 2, the substrate 5 is heated to
Heat below 0 ° C.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for growing a compound semiconductor layer, and more particularly to a method for growing a compound semiconductor layer.
After growing the group V compound semiconductor layer, II-V
It is suitable for application to the manufacture of an element that requires the growth of a group I compound semiconductor layer, for example, a semiconductor light emitting element or a high-speed operation element using a II-VI compound semiconductor.

[0002]

2. Description of the Related Art In recent years, there has been a demand for a semiconductor laser capable of emitting blue or green light in order to increase the recording / reproduction density or the resolution of an optical disk or a magneto-optical disk which performs recording / reproduction using a laser beam. It is growing and research is being actively conducted for its practical use.

[0003] Materials used for manufacturing such a semiconductor light emitting device capable of emitting blue or green light include Zn and M.
II- comprising at least one or more group II elements such as g, Be, Cd, and Hg and at least one or more group VI elements such as O, S, Se, Te, and Po;
Group VI compound semiconductors are most promising. In particular, ZnMgSSe, which is a quaternary mixed crystal, is capable of crystal growth on a GaAs substrate and has a cladding layer when a semiconductor laser capable of emitting blue to green light in a wavelength band of 400 to 550 nm is manufactured using a GaAs substrate. It is known that it is suitable for an optical waveguide layer (for example, Electronics Letters 28 (1992) 17
98, Electronics Letters 29 (1993) 1488, Appl.Phys.Le
tt., 66 (1995) 656).

In the semiconductor light emitting device using the II-VI group compound semiconductor, reliability and life are serious problems, and the crystal defect density, which is a cause of deterioration of light emission intensity, is reduced, and crystallinity is reduced. Improvement is an important issue. Therefore, in order to reduce the crystal defect density, a method of first growing a GaAs buffer layer on a GaAs substrate and then growing a II-VI group compound semiconductor layer thereon is used.

[0005]

However, even when a semiconductor light-emitting device is manufactured by growing a II-VI group compound semiconductor layer on a GaAs buffer layer as described above, the GaAs buffer layer and the overlying GaAs buffer layer are grown. II-V
Since stacking faults generated from the interface with the group I compound semiconductor layer are present at a high density, a semiconductor light emitting device excellent in reliability and lifetime has not been realized.

According to recent studies, the reliability of a semiconductor light emitting device using a II-VI compound semiconductor largely depends on the density of crystal defects generated from its substrate. For example, when a ZnSe layer is to be grown on a GaAs substrate by molecular beam epitaxy (MBE), Se becomes the G of the substrate.
a, it has been reported that this causes stacking faults (Appl. Phys. Lett., 68 (199
6) 2413). Further, due to stacking faults, II-VI
It has also been clarified that the deterioration of semiconductor light emitting devices using group compound semiconductors proceeds (Appl. Phys. Lett., 63 (199).
3) 3107). These experimental facts are being confirmed in subsequent tests by each research institution.

From these facts, in order to improve the reliability and life of a semiconductor light emitting device using a II-VI group compound semiconductor, a III-V group compound semiconductor layer and a II-VI layer grown thereon are required. It is necessary to reduce crystal defects such as stacking faults generated from the interface with the group III compound semiconductor layer.

Accordingly, an object of the present invention is to provide
When a II-VI compound semiconductor layer is grown on a group V compound semiconductor layer, crystal defects such as stacking faults generated from an interface between the III-V compound semiconductor layer and the II-VI compound semiconductor layer are removed. An object of the present invention is to provide a compound semiconductor layer growth method and a vapor phase growth apparatus capable of achieving a significant reduction.

[0009]

Means for Solving the Problems The present inventor has made intensive studies in order to solve the above-mentioned problems of the prior art. The outline is described below.

FIG. 1 shows the temperature dependence of the adhesion coefficient of S on the GaAs surface. However, the temperature dependence of the adhesion coefficient of S was determined by changing the substrate temperature, growing a ZnMgSSe layer on a GaAs substrate by the MBE method, and examining the change in the S composition with the substrate temperature.
Further, ZnS was used as a raw material of the molecular beam source of S, and conditions other than the substrate temperature were the same. From FIG. 1, it can be seen that as the substrate temperature increases, the S adhesion coefficient decreases.

Also, for Se, for example, when the substrate temperature is 300 ° C. and 400 ° C., the growth rate is different, and when the substrate temperature is 400 ° C., the growth rate is lower.
The adhesion coefficient decreases with increasing substrate temperature. It is considered that Te also shows a similar tendency.

When a semiconductor light emitting device using a II-VI compound semiconductor is manufactured by the MBE method, a growth chamber for growing a III-V compound semiconductor and a growth chamber for growing a II-VI compound semiconductor are usually used. An MBE apparatus having a configuration in which the chambers are connected by a transport path is used. First, a GaAs substrate is mounted on a substrate holder in a growth chamber for growing a group III-V compound semiconductor,
The GaAs substrate is heated to a predetermined growth temperature, and GaAs is
Grow the s-buffer layer. Next, after the heating of the substrate holder is stopped, the substrate holder is transported to an intermediate room provided in the transport path. Next, after the GaAs substrate is removed from the substrate holder by the transfer rod in the intermediate chamber, the GaAs substrate is transferred to another transfer rod.
It is mounted on a substrate holder for growing a group I-VI compound semiconductor. Thereafter, the substrate holder is introduced into a growth chamber for growing a II-VI compound semiconductor, and a II-VI compound semiconductor layer is grown on the GaAs buffer layer in the growth chamber.

However, according to the findings of the present inventors,
In this case, GaAs is transferred from the growth chamber for growing a III-V compound semiconductor to the growth chamber for growing a II-VI compound semiconductor.
During the transport of the substrate, a group VI element such as S or Se mainly adheres to the surface of the GaAs buffer layer as an impurity, so that II is formed on the GaAs buffer layer in a growth chamber for growing a II-VI compound semiconductor. When the -VI compound semiconductor layer is grown, the impurities serve as nuclei, and stacking faults are generated at a high density from the interface between the GaAs buffer layer and the II-VI compound semiconductor layer. Here, unless the growth chamber and the transport path are sufficiently clean and free from contamination, it is considered that these impurities do not adhere. In practice, however, in an MBE apparatus for growing a II-VI group compound semiconductor, It is considered that contamination by these impurities is inevitable.

According to the study of the present inventor, in order to reduce this stacking fault, it is first necessary to prevent the impurities of Group VI elements such as S and Se from adhering to the surface of the GaAs substrate. Is attached, II
It is necessary to remove them before growing the group VI compound semiconductors. And for this, S and S
The adhesion coefficient such as e decreases as the substrate temperature increases, by positively utilizing the aforementioned fact to reduce the adhesion of impurities such as S and Se during the transfer of the substrate,
It is effective to remove attached impurities by removing them.

Specifically, first, in order to reduce the adhesion of impurities such as S and Se to the surface of the substrate being transported, the temperature of the substrate being transported should be 300 ° C. or less by keeping the substrate holder warm. It is effective to keep the temperature below 480 ° C. FIG. 2 shows the relationship between the minimum temperature during transport and the stacking fault density. The sample used for the measurement of the stacking fault density was obtained by growing a GaAs buffer layer on a GaAs substrate in a growth chamber for growing a III-V compound semiconductor, and then growing the GaAs substrate on a II-VI compound semiconductor. To a growth chamber for irradiation, where the molecular beam of Zn is first irradiated for 20 minutes and then ZnSe.
Fabricated by growing layers. Here, the minimum temperature during transport is the temperature when the substrate holder is attached to the growth chamber for growing a II-VI compound semiconductor. This is because when growing a GaAs layer in a growth chamber for growing a III-V compound semiconductor, a molecular structure of As is irradiated so that a surface structure called (2 × 4) β structure is observed. For this reason, the growth temperature is set to about 550 ° C., but after the growth is completed, the heating of the substrate holder is stopped, and the temperature decreases during the transfer, and the lowest temperature in the growth chamber for II-VI group compound semiconductor growth. Because it becomes. According to FIG. 2, the stacking fault density increases as the minimum temperature during transport decreases. This is because S in the growth chamber during transport,
This is because stacking faults occur with impurities such as Se as nuclei, and this means that by raising the temperature during transportation, it becomes difficult for these impurities to adhere.

Next, S, S adhering to the substrate surface during transport
In order to remove impurities such as e before the growth of the II-VI compound semiconductor layer, the substrate is heated to 480 ° C. before the growth of the II-VI compound semiconductor layer is started in the growth chamber for growing the II-VI compound semiconductor. It is effective to elevate the temperature to the above temperature to desorb impurities adhering to the substrate surface. FIG.
The relationship between the maximum temperature and the stacking fault density in a growth chamber for growing II-VI group compound semiconductors is shown in FIG. However, the temperature was raised after mounting the substrate holder in the growth chamber for growing the II-VI compound semiconductor. According to FIG. 3, it can be seen that stacking faults are reduced as the maximum temperature at the time of temperature increase is higher, and impurities attached to the substrate surface are desorbed. This is presumably because the stacking fault density was reduced due to the desorption of the impurities.

It has been confirmed that the stacking fault density can be reduced to about 1 × 10 ⁴ cm ⁻² by these techniques, and further, the stacking fault density can be partially reduced to the order of 10 ³ cm ^−2. It was also confirmed that these methods could be used, and it was found that these techniques were effective. This method is particularly effective when the used MBE apparatus is old or another substance is grown before use.

The above is a case where the III-V compound semiconductor layer and the II-VI compound semiconductor layer are grown by the MBE method. Phase growth (MOCVD)
The II-VI compound semiconductor layer is grown by MB method.
The present invention can be applied to a case where the growth is performed by the E method. Here, the group III-V compound semiconductor layer is formed by MOCVD.
In the case of growing by the method, after the growth, the supply of the raw material gas is stopped, the inside of the reaction tube is purged with nitrogen gas, and the inside of the reaction tube is evacuated and then transferred to a growth chamber for II-VI group compound semiconductor growth.

The present invention has been devised based on the above study.

That is, in order to achieve the above object, a method for growing a compound semiconductor layer according to the first invention of the present invention is a method for growing a compound semiconductor layer in a first growth chamber for growing a III-V compound semiconductor by a molecular beam epitaxy method or an organic light emitting method. After growing a group III-V compound semiconductor layer on a substrate by metal chemical vapor deposition, the substrate is transported to a second growth chamber for growing a group II-VI compound semiconductor, where the second growth chamber is used. In a compound semiconductor layer growth method in which a II-VI group compound semiconductor layer is grown on a substrate by a molecular beam epitaxy method or a metal organic chemical vapor deposition method, the first growth chamber is moved from the first growth chamber to the second growth chamber. The temperature of the substrate during transfer is maintained at 300 ° C. or more and 570 ° C. or less.

In the first aspect of the present invention, in order to more effectively prevent the attachment of impurities such as Group VI elements such as S and Se to the substrate surface, it is preferable to remove the second growth chamber from the first growth chamber. The temperature of the substrate during transfer to the growth chamber is 480 ° C. or higher5
Keep below 70 ° C.

According to a second aspect of the present invention, a III-V compound semiconductor layer is formed on a substrate by a molecular beam epitaxy method or a metal organic chemical vapor deposition method in a first growth chamber for growing a III-V compound semiconductor. After the growth of
The substrate is transported to a second growth chamber for growing a group I-VI compound semiconductor, where the II-VI compound semiconductor is grown on the substrate by molecular beam epitaxy or metal organic chemical vapor deposition.
In the method for growing a compound semiconductor layer in which a group III compound semiconductor layer is grown, the II-V
The method is characterized in that the substrate is heated to a temperature of 480 ° C. or more and 570 ° C. or less before the start of the growth of the group I compound semiconductor layer.

In the first and second aspects of the present invention, the group III-V compound semiconductor layer typically comprises
aAs layer. Further, the II-VI group compound semiconductor layer includes at least one or more group II elements selected from the group consisting of Zn, Mg, Be, Cd, and Hg, and O, S,
It is composed of at least one or more group VI elements selected from the group consisting of Se, Te, and Po. To name a few specific examples, a ZnCdMgSSe layer, a ZnMgSSe
Layer, ZnSSe layer, ZnSe layer, ZnTe layer, and the like.

According to a third aspect of the present invention, there is provided a method according to the present invention, which comprises the steps of III-V by molecular beam epitaxy or metalorganic chemical vapor deposition.
A first growth chamber for growing a group III compound semiconductor layer;
A second growth chamber for growing a II-VI compound semiconductor layer by molecular beam epitaxy or metal organic chemical vapor deposition, and a substrate transported between the first growth chamber and the second growth chamber And a transfer path for performing the transfer, the temperature of the substrate being transferred from the first growth chamber to the second growth chamber can be maintained at 300 ° C. or higher and 570 ° C. or lower. It is characterized by having.

In the third aspect of the present invention, in order to more effectively prevent the attachment of impurities such as Group VI elements such as S and Se to the substrate surface, it is preferable to remove the first growth chamber from the first growth chamber. 2, so that the temperature of the substrate during transfer to the growth chamber can be maintained at 480 ° C. or higher and 570 ° C. or lower.

In the third aspect of the present invention, the temperature of the substrate being transferred from the first growth chamber to the second growth chamber is set to 300 degrees.
In order to maintain the temperature in the range of not less than 570 ° C. and not more than 570 ° C., specifically, for example, the heat capacity of the substrate holder is sufficiently increased, or the transfer rod is configured to be heatable, and the substrate is held by the transfer rod. May be heated.

In the present invention, the molecular beam epitaxy includes a molecular beam epitaxy using a gas source and a molecular beam epitaxy (MOMB) using an organometallic compound source.
Various molecular beam epitaxy methods such as the E) method are included.

According to the first aspect of the present invention configured as described above, the temperature of the substrate during transfer from the first growth chamber to the second growth chamber is maintained at 300 ° C. or more and 570 ° C. or less. S, Se on the substrate surface during transportation
And the like can be prevented from adhering.

According to the second aspect of the present invention configured as described above, before starting the growth of the II-VI group compound semiconductor layer in the second growth chamber, the substrate is heated from 480 ° C. to 570 ° C.
By heating to the following temperature, impurities such as S and Se adhered to the substrate surface during transport can be removed by desorption.

According to the third aspect of the present invention configured as described above, the temperature of the substrate during transfer from the first growth chamber to the second growth chamber is maintained at 300 ° C. or more and 570 ° C. or less. This configuration can prevent impurities such as S and Se from adhering to the substrate surface during transfer.

[0031]

Embodiments of the present invention will be described below with reference to the drawings.

First, in the following embodiment, III-V
An MBE apparatus used for growing a group III compound semiconductor layer and a group II-VI compound semiconductor layer will be described. FIG. 4 shows the configuration of this MBE apparatus.

As shown in FIG. 4, this MBE apparatus has a transfer path in which a first growth chamber 1 and a second growth chamber 2 each composed of a vacuum vessel capable of being evacuated to an ultra-high vacuum. 3 are connected. Here, the first growth chamber 1 is for growing a III-V compound semiconductor, and the second growth chamber 2 is for growing a II-VI compound semiconductor. A gate valve (not shown) is provided between the first growth chamber 1 and the transport path 3 and between the second growth chamber 2 and the transport path 3, respectively.
Are provided, and these gate valves are opened and closed during transport.

The first growth chamber 1 and the second growth chamber 2 have the same configuration. That is, in the first growth chamber 1 and the second growth chamber 2, for example, a Mo substrate holder 4 having a built-in heater (not shown) is disposed, and the substrate 5 is mounted on the substrate holder 4 by, for example, I.
n (not shown). A plasma cell 6 and a required number of molecular beam sources 7 are arranged facing the surface of the substrate 5. As the plasma cell 6, an electron cyclotron resonance (ECR) cell, a radio frequency (RF) plasma cell, or the like is used.
_Two plasmas can be generated.
As the molecular beam source 7, a Knudsen cell (K cell) or a valve cell is used. As the raw material of the molecular beam source 7, a single raw material, a material obtained by cracking them, a compound semiconductor raw material, and the like are used.

In this MBE apparatus, the substrate holder 4 is formed, for example, with a sufficiently large thickness so as to have a sufficiently large heat capacity, and after growing in the first growth chamber 1, the substrate holder 4 While the heating is stopped and the substrate holder 4 is transported in the transport path 3, the temperature of the substrate 5 is kept at least 300 ° C. or more, for example, 400 to 500 ° C.

Next, according to one embodiment of the present invention, II-
A method for manufacturing a semiconductor laser using a group VI compound semiconductor will be described. This semiconductor laser is SCH (Separa
te Confinement Heterostructure).

In order to manufacture the semiconductor laser according to the first embodiment, first, the inside of the first growth chamber 1 for growing a III-V compound semiconductor evacuated to an ultra-high vacuum of the MBE apparatus shown in FIG. Through a sample exchange chamber (not shown)
The As substrate 11 (FIG. 5) is introduced and mounted on the substrate holder 4. Here, the n-type GaAs substrate 11 is doped with, for example, Si as an n-type impurity. Next, the n-type GaAs substrate 11 is heated by heating the substrate holder 4 with a heater.
Is heated to a temperature of, for example, about 580 ° C., and the surface is thermally etched to remove a surface oxide film and the like to clean the surface. Next, the n-type GaAs substrate 11
Is maintained at a predetermined growth temperature, for example, about 550 ° C., and as shown in FIG. 5, an n-type G doped with, for example, Si as an n-type impurity on the n-type GaAs substrate 11 by the MBE method.
The aAs buffer layer 12 is grown.

Next, after the heating of the substrate holder 4 is stopped, the substrate holder 4 is transferred to an intermediate room provided in the transfer path 3. Next, after removing the n-type GaAs substrate 11 from the substrate holder 4 by the transfer rod in the intermediate chamber, the transfer rod is transferred to another transfer rod, and the n-type GaAs substrate 11 is transferred by the transfer rod to the II-VI group compound semiconductor growth. Is mounted on the substrate holder 4. Next, this substrate holder 4 is
It is introduced into the second growth chamber 2 for growing a group I compound semiconductor. In this case, since the heat capacity of the substrate holder 4 is sufficiently large as described above, the temperature of the n-type GaAs substrate 11 during transportation can be maintained at 300 ° C. or more, for example, 400 to 500 ° C., and S, S It is possible to prevent impurities such as Se from attaching.

Next, in the second growth chamber 2, each II-VI compound semiconductor layer forming the laser structure is grown. Prior to that, the n-type GaAs substrate 11 is heated by heating the substrate holder 4. At a temperature of 480 ° C or higher,
For example, the temperature is raised to 510 ° C., and the temperature is maintained, for example, for 1 to 2 minutes.
Thereby, impurities such as S and Se adhering to the surface of the GaAs buffer layer 12 during transportation or the like can be eliminated and removed. Next, after setting the n-type GaAs substrate 11 to a growth temperature of, for example, about 280 ° C., the n-type GaAs
After irradiating the buffer layer 12 with a molecular beam of Zn for 20 minutes, the n-type ZnSe buffer layer 13 and the n-type ZnMgSS
e-cladding layer 14, for example, n-type ZnSSe optical waveguide layer 15 made of ZnS _0.06 Se _0.94 , for example, having a thickness of 3.5 nm
Active layer 16 composed of Zn _0.6 Cd _0.4 Se having a single quantum well structure, for example, p-type Zn composed of ZnS _0.06 Se _0.94
SSe optical waveguide layer 17, p-type ZnMgSSe clad layer 1
8, p-type ZnSSe layer 19, p-type ZnSe contact layer 20, p-type ZnTe / ZnSe multiple quantum well (MQW)
A layer 21 and a p-type ZnTe contact layer 22 are grown sequentially.

Here, the n-type ZnSe buffer layer 13, n
-Type ZnMgSSe cladding layer 14 and n-type ZnSSe
The optical waveguide layer 15 is doped with, for example, Cl as an n-type impurity. Further, the p-type ZnSSe optical waveguide layer 17, p
-Type ZnMgSSe cladding layer 18, p-type ZnSSe layer 1
9, p-type ZnSe contact layer 20, p-type ZnTe / Z
nSeMQW layer 21 and p-type ZnTe contact layer 2
2 is doped with, for example, N as a p-type impurity. The n-type ZnSe buffer layer 13 and the n-type ZnMg
SSe clad layer 14 and n-type ZnSSe optical waveguide layer 1
The doping of Cl as the n-type impurity of No. 5 is, for example,
This is performed using a molecular beam source 7 of ZnCl ₂ . On the other hand, p-type Zn
SSe optical waveguide layer 17, p-type ZnMgSSe clad layer 1
8, doping of p-type ZnSSe layer 19, p-type ZnSe contact layer 20, p-type ZnTe / ZnSe MQW layer 21 and p-type ZnTe contact layer 22 with N as a p-type impurity is the second doping of the MBE apparatus shown in FIG. This is performed by irradiating the substrate surface with N ₂ plasma generated by the plasma cell 6 in the growth chamber 2.

The thickness of these layers is, for example, n-type ZnM
The gSSe cladding layer 14 and the p-type ZnMgSSe cladding layer 18 have a thickness of 1000 nm and the n-type ZnSSe optical waveguide layer 1
5 and p-type ZnSSe optical waveguide layer 17 are 100 nm, p
The type ZnSSe layer 19 has a thickness of 3000 nm, and the p-type ZnSe contact layer 20 has a thickness of 100 nm.

Next, a stripe-shaped resist pattern (not shown) having a predetermined width is formed on the ZnTe contact layer 22, and this resist pattern is used as a mask by a wet etching method until at least the p-type ZnSSe layer 19 is reached. Etch. Thereby, the p-type ZnSe contact layer 20, the p-type ZnTe / ZnSeM
The QW layer 21 and the p-type ZnTe contact layer 22 are patterned in a stripe shape.

Next, an Al ₂ O ₃ film was vacuum-deposited on the entire surface while leaving the resist pattern used for the above-mentioned etching, and the resist pattern was formed on the A
It is removed together with the l ₂ O ₃ film (lift-off). Thereby, the p-type ZnSSe layer 19 other than the stripe portion is formed.
An insulating layer 23 made of an Al ₂ O ₃ film is formed only on the upper surface. This insulating layer 23 is for performing current confinement.

Next, a Pd film, a Pt film and an Au film are sequentially vacuum-deposited on the entire surface of the stripe-shaped p-type ZnTe contact layer 22 and the insulating layer 23 to form a p-side electrode 24 composed of a Pd / Pt / Au electrode. Then, a heat treatment is performed as necessary to make the p-side electrode 24 into ohmic contact with the p-type ZnTe contact layer 22. On the other hand, on the back surface of the n-type GaAs substrate 11, an n-side electrode 25 such as an In electrode is formed.

Next, the n-type GaAs substrate 11 on which the laser structure has been formed as described above is cleaved into a bar shape to form both resonator end faces, and after coating the end faces,
This bar is cleaved into chips and packaging is performed.

As described above, according to this embodiment,
In a first growth chamber 1 for growing a III-V compound semiconductor, n-type Ga is deposited on an n-type GaAs substrate 11 by MBE.
After growing the As buffer layer 12, the n-type GaAs
While the substrate 11 is transported through the transport path 3 to the second growth chamber 2 for II-VI group compound semiconductor growth, the n-type GaAs
By keeping the temperature of the s substrate 11 at 300 ° C. or more and 570 ° C. or less, it is possible to prevent impurities such as S and Se from adhering to the surface of the n-type GaAs buffer layer 12 during the transport. Further, in the second growth chamber 2,
Before the start of growth, the n-type GaAs substrate 11 is
By heating to a temperature of 0 ° C. or less, even if impurities such as S and Se adhere to the surface of the n-type GaAs buffer layer 12 during transportation or the like, these impurities are desorbed and removed. Can be. And, by these, n-type Ga
By cleaning the surface of the As buffer layer 12,
A II-VI group compound semiconductor layer can be grown on the clean surface, thereby reducing stacking faults generated from the interface between the n-type GaAs buffer layer 12 and the II-VI group compound semiconductor layer grown thereon. Density is, for example, 10 ³ c
m ^-2 units.

FIG. 6 shows the relationship between the stacking fault density and the life of the semiconductor laser. From FIG. 6, it can be seen that the stacking fault density obtained according to this embodiment can drastically extend the life of the semiconductor laser.

As described above, one embodiment of the present invention has been specifically described. However, the present invention is not limited to the above-described embodiment, and various modifications based on the technical idea of the present invention are possible. .

For example, the numerical values and structures used in the above embodiment are merely examples, and different numerical values and structures may be used as needed. Specifically, the configuration of the MBE apparatus shown in FIG. 4 is merely an example, and an MBE apparatus having a different configuration may be used.

In the above-described embodiment, the first
N-type GaAs during transfer from the growth chamber 1 to the second growth chamber 2
The temperature of the s substrate 11 is maintained at 300 ° C. or higher and 570 ° C. or lower, and the n-type GaAs substrate 11 is heated to 480 ° C.
Although heating is performed at a temperature of 570 ° C. or lower, the same effect can be obtained by performing only one of these.

Further, for example, in the above-described embodiment, the p-type ZnT / ZnSe MQW layer 21 of the p-type ZnT
A p-type BeTe layer or a p-type GaAs layer is used instead of the e-layer, and a p-type BTe layer is used instead of the p-type ZnTe contact layer 22.
Using an eTe contact layer or a p-type GaAs contact layer, the n-type ZnSSe optical waveguide layer 15 and the p-type ZnSS
An n-type BeZnSe optical waveguide layer and a p-type BeZnSe optical waveguide layer are used instead of the e-type optical waveguide layer 17, respectively.
nMgSSe cladding layer 14 and p-type ZnMgSSe
N-type BeMgZnS instead of cladding layer 18
An e-cladding layer and a p-type BeMgZnSe cladding layer may be used.

Further, in the above-described embodiment, the case where the present invention is applied to the manufacture of a semiconductor laser having an SCH structure has been described.
le Heterostructure) semiconductor laser,
The present invention can be applied to the manufacture of light-emitting diodes, and further to the manufacture of high-speed semiconductor devices using II-VI compound semiconductors.

[0053]

As described above, according to the present invention, the temperature of the substrate during transfer from the first growth chamber to the second growth chamber is kept at 300 ° C. or more and 570 ° C. or less, The substrate is heated to 480 ° C. or more and 570 ° C. or less before the growth of the II-VI group compound semiconductor layer in the growth chamber of (1) to prevent the adhesion of impurities to the substrate surface during transportation, or Impurities adhering to the substrate surface during transportation or the like can be removed.
Group IV compound semiconductor layer and II-V grown thereon
Stacking faults generated from the interface with the group I compound semiconductor layer can be significantly reduced.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing a relationship between a substrate temperature and an S adhesion coefficient.

FIG. 2 is a schematic diagram illustrating a relationship between a minimum temperature during transport and a stacking fault density.

FIG. 3 is a schematic diagram illustrating a relationship between a maximum temperature at the time of temperature rise and a stacking fault density.

FIG. 4 shows an MB used in an embodiment of the present invention.
It is an approximate line figure showing the composition of E device.

FIG. 5 is a cross-sectional view for explaining the method for manufacturing the semiconductor laser according to one embodiment of the present invention;

FIG. 6 is a schematic diagram illustrating the relationship between stacking fault density and the life of a semiconductor laser.

[Explanation of symbols]

1 ... first growth chamber, 2 ... second growth chamber, 3 ...
・ Transport path, 4 ・ ・ ・ Substrate holder, 5 ・ ・ ・ Substrate, 6 ・
..Plasma cell, 7 ... molecular beam source, 11 ... n-type GaAs substrate, 12 ... n-type GaAs buffer layer, 1
3 ... n-type ZnSe buffer layer, 14 ... n-type Zn
MgSSe clad layer, 15: n-type ZnSSe optical waveguide layer, 16: active layer, 17: p-type ZnSSe optical waveguide layer, 18: p-type ZnMgSSe clad layer, 2
0 ... p-type ZnSe contact layer, 21 ... p-type Z
nTe / ZnSe MQW layer, 22 ... p-type ZnTe contact layer, 24 ... p-side electrode, 25 ... n-side electrode

Claims (9)

[Claims] 1. A first method for growing a group III-V compound semiconductor.
After growing a group III-V compound semiconductor layer on a substrate by a molecular beam epitaxy method or a metal organic chemical vapor deposition method in a growth chamber, the substrate is placed in a second growth chamber for growing a group II-VI compound semiconductor. And growing the II-VI compound semiconductor layer on the substrate by the molecular beam epitaxy method or the metal organic chemical vapor deposition method in the second growth chamber. A method for growing a compound semiconductor layer, wherein the temperature of the substrate during transfer from the first growth chamber to the second growth chamber is maintained at 300 ° C or higher and 570 ° C or lower. 2. The compound according to claim 1, wherein the temperature of the substrate during transfer from the first growth chamber to the second growth chamber is maintained at 480 ° C. or higher and 570 ° C. or lower. A method for growing a semiconductor layer. 3. The III-V compound semiconductor layer is formed of Ga
2. The method according to claim 1, wherein the compound semiconductor layer is an As layer. 4. The II-VI compound semiconductor layer according to claim 1,
at least one or more group II elements selected from the group consisting of n, Mg, Be, Cd and Hg, and O, S, Se,
2. The method for growing a compound semiconductor layer according to claim 1, comprising at least one or more Group VI elements selected from the group consisting of Te and Po. 5. A first semiconductor device for growing a group III-V compound semiconductor.
After growing a group III-V compound semiconductor layer on a substrate by a molecular beam epitaxy method or a metal organic chemical vapor deposition method in a growth chamber, the substrate is placed in a second growth chamber for growing a group II-VI compound semiconductor. And growing the II-VI compound semiconductor layer on the substrate by the molecular beam epitaxy method or the metal organic chemical vapor deposition method in the second growth chamber. A method for growing a compound semiconductor layer, wherein the substrate is heated to a temperature of 480 ° C. or more and 570 ° C. or less before the growth of the II-VI group compound semiconductor layer in the second growth chamber is started. 6. The III-V compound semiconductor layer is formed of Ga
6. The method according to claim 5, wherein the compound semiconductor layer is an As layer. 7. The II-VI compound semiconductor layer according to claim 1, wherein
at least one or more group II elements selected from the group consisting of n, Mg, Be, Cd and Hg, and O, S, Se,
6. The method for growing a compound semiconductor layer according to claim 5, comprising at least one group VI element selected from the group consisting of Te and Po. 8. A first growth chamber for growing a group III-V compound semiconductor layer by molecular beam epitaxy or metalorganic chemical vapor deposition, and by a molecular beam epitaxy or metalorganic chemical vapor deposition. Vapor phase growth having a second growth chamber for growing a II-VI compound semiconductor layer, and a transfer path for transferring a substrate between the first growth chamber and the second growth chamber An apparatus, wherein the temperature of the substrate during transfer from the first growth chamber to the second growth chamber can be maintained at 300 ° C. or more and 570 ° C. or less. Growth equipment. 9. A structure wherein the temperature of the substrate during transfer from the first growth chamber to the second growth chamber can be maintained at 480 ° C. or higher and 570 ° C. or lower. The vapor phase growth apparatus according to claim 8.