JPH10200215A - Semiconductor light emitting element and manufacturing method thereof - Google Patents
Semiconductor light emitting element and manufacturing method thereofInfo
- Publication number
- JPH10200215A JPH10200215A JP1344097A JP1344097A JPH10200215A JP H10200215 A JPH10200215 A JP H10200215A JP 1344097 A JP1344097 A JP 1344097A JP 1344097 A JP1344097 A JP 1344097A JP H10200215 A JPH10200215 A JP H10200215A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- layer
- emitting layer
- semiconductor
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 230000002950 deficient Effects 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 16
- 239000000758 substrate Substances 0.000 abstract description 13
- 229910052594 sapphire Inorganic materials 0.000 abstract description 8
- 239000010980 sapphire Substances 0.000 abstract description 8
- 239000011148 porous material Substances 0.000 abstract description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 12
- 229910021529 ammonia Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910020068 MgAl Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明が属する技術分野】本発明は、半導体発光素子の
発光層の構造・製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure and a manufacturing method of a light emitting layer of a semiconductor light emitting device.
【０００２】[0002]
【従来の技術】ＧａＮ系材料を用いた半導体発光素子
は、近年高輝度の発光ダイオード（ＬＥＤ）が実現され
たのを機会に研究が活発に行われており、半導体レーザ
ーの室温連続発振の報告も聞かれるようになっている。
一般的に、このような半導体発光素子は、基板としてサ
ファイアの単結晶を用い、その上にＭＯＣＶＤ法により
低温でバッファー層を成長し、その後ＧａＮ系発光部を
形成するという手順で作成されている。2. Description of the Related Art Semiconductor light-emitting devices using GaN-based materials have been actively studied in recent years as high-luminance light-emitting diodes (LEDs) have been realized. Is also asked.
Generally, such a semiconductor light emitting device is prepared by using a single crystal of sapphire as a substrate, growing a buffer layer thereon by MOCVD at a low temperature, and then forming a GaN-based light emitting portion. .
【０００３】[0003]
【発明が解決しようとする課題】ところで、一般に基板
上に半導体層を成長させる場合、格子定数が合致してい
ない（格子不整合）状態では転位などの欠陥が発生する
事が知られている。また基板界面からの貫通転位以外に
も、不純物の混入や多層膜界面での歪み等の要因によっ
ても膜中に転位などの欠陥が生じることがある。これら
欠陥部は発光特性や寿命に悪影響を及ぼすことも知られ
ている。これら転位は結晶欠陥であるため非発光再結合
中心として働いたり、そこが電流のパスとして働き漏れ
電流の原因になるなど、発光特性や寿命特性を低下させ
る原因となる。特にＧａＡｓ系発光素子などでは、ダー
クスポットと呼ばれる暗点欠陥が発光特性や寿命特性を
悪化させる原因となっている。Incidentally, it is generally known that when a semiconductor layer is grown on a substrate, defects such as dislocations are generated when the lattice constants do not match (lattice mismatch). In addition to threading dislocations from the substrate interface, defects such as dislocations may occur in the film due to factors such as contamination of impurities and distortion at the multilayer film interface. It is also known that these defective portions have an adverse effect on light emission characteristics and life. Since these dislocations are crystal defects, they act as a non-radiative recombination center or act as a current path, causing a leakage current, and thus cause a deterioration in light-emitting characteristics and life characteristics. In particular, in a GaAs-based light-emitting element or the like, a dark spot defect called a dark spot causes deterioration of light-emitting characteristics and life characteristics.
【０００４】また、ＧａＮ系（ＩｎX ＧａY ＡｌZ Ｎ：
０≦Ｘ≦１、０≦Ｙ≦１、０≦Ｚ≦１、Ｘ＋Ｙ＋Ｚ＝
１）の半導体発光素子、特にサファイアを基板として用
いた発光素子においては、基板とＧａＮ系層との間に大
きな格子不整合が存在するため貫通転位が１０10個cm-2
以上も存在することが知られており、活性層にもこの数
の転位が存在する。従ってＧａＮ系においてもこのよう
な欠陥が発光特性や寿命特性の向上を阻害する要因とな
っていると考えられている。Further, GaN-based (In X Ga Y Al Z N :
0 ≦ X ≦ 1, 0 ≦ Y ≦ 1, 0 ≦ Z ≦ 1, X + Y + Z =
In the semiconductor light emitting device of 1), in particular, a light emitting device using sapphire as a substrate, there is a large lattice mismatch between the substrate and the GaN-based layer, so that threading dislocations are 10 10 cm −2.
It is known that the number of dislocations also exists, and this number of dislocations also exists in the active layer. Therefore, it is considered that such defects in GaN-based materials also hinder the improvement of the light emission characteristics and the life characteristics.
【０００５】本発明は上記問題に鑑み、発光特性や寿命
特性に優れた半導体発光素子を提供することを目的とす
る。[0005] In view of the above problems, an object of the present invention is to provide a semiconductor light emitting device having excellent light emitting characteristics and life characteristics.
【０００６】[0006]
【課題を解決するための手段】本発明の半導体発光素子
は、複数積層された半導体層の一部を発光層とする半導
体発光素子において、前記積層半導体層における低転位
領域を発光層として用いたことを特徴とするものであ
る。According to the semiconductor light emitting device of the present invention, a low dislocation region in the laminated semiconductor layer is used as a light emitting layer in a semiconductor light emitting device in which a part of a plurality of stacked semiconductor layers is a light emitting layer. It is characterized by the following.
【０００７】また、複数積層された半導体層の一部を発
光層とする半導体発光素子において、前記発光層には多
数の孔が形成されていることを特徴とする。前記の孔は
発光層を貫通する孔であってもよい。また、前記の孔は
積層半導体層中の転位線が発光層を通過する部位を含む
領域に形成されていることが望ましい。さらに、発光層
はＧａＮ系半導体材料からなる場合に本発明は好適であ
る。In a semiconductor light emitting device in which a part of a plurality of stacked semiconductor layers is a light emitting layer, a large number of holes are formed in the light emitting layer. The hole may be a hole penetrating the light emitting layer. Further, it is preferable that the hole is formed in a region including a portion where a dislocation line in the stacked semiconductor layer passes through the light emitting layer. Further, the present invention is suitable when the light emitting layer is made of a GaN-based semiconductor material.
【０００８】また、本発明の半導体発光素子の製造方法
は、表面に微小孔を有する発光層を成長し、前記微小孔
の深さ及び径を拡張させた後、もしくは拡張させつつ、
その上に他の半導体層を成長させることを特徴とするも
のである。Further, according to the method of manufacturing a semiconductor light emitting device of the present invention, a light emitting layer having micropores on its surface is grown, and the depth and the diameter of the micropores are expanded or after expanding.
Another semiconductor layer is grown thereon.
【０００９】この場合、発光層はＧａＮ系半導体材料か
らなることが好ましく、また前記微小孔の拡張は水素含
有雰囲気で行うことが望ましい。さらに、発光層成長、
微小孔の拡張、及び他の半導体層の成長を水素含有量を
変化させることで、反応炉から取り出すことなく、連続
して行うことが望ましい。一方、発光層を成長した後、
反応炉から取り出し、欠陥部上の発光層を除去した後、
その上に他の半導体層を成長させるようにしても良い。In this case, the light emitting layer is preferably made of a GaN-based semiconductor material, and the micropores are preferably expanded in a hydrogen-containing atmosphere. Furthermore, light emitting layer growth,
It is desirable that the expansion of the micropores and the growth of the other semiconductor layer be performed continuously by changing the hydrogen content without taking out from the reactor. On the other hand, after growing the light emitting layer,
After removing from the reactor and removing the light emitting layer on the defect,
Another semiconductor layer may be grown thereon.
【００１０】[0010]
【発明の実施の形態及び作用】本発明の半導体発光素子
によれば、低転位領域を発光層として用いることによ
り、結果として高品質な結晶の部分のみを発光層として
用いることとなるので、発光特性や寿命特性を向上させ
ることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the semiconductor light emitting device of the present invention, by using a low dislocation region as a light emitting layer, only a high quality crystal portion is used as a light emitting layer. Characteristics and life characteristics can be improved.
【００１１】上記低転位領域を発光層として用いる具体
的手段として、発光層に多数の孔を形成させる方法が挙
げられる。この孔は発光層における欠陥部に対応して設
けられることを目的としており、これにより発光層は欠
陥の部分を除去した場所、つまり低転位領域のみとする
ことができる。したがって、この孔を発光層に多数存在
させることで、発光層を低転位化することが可能とな
る。As a specific means for using the low dislocation region as a light emitting layer, there is a method of forming a large number of holes in the light emitting layer. This hole is intended to be provided corresponding to a defective portion in the light emitting layer, so that the light emitting layer can be provided only at a position where a defective portion is removed, that is, only at a low dislocation region. Therefore, the dislocation of the light emitting layer can be reduced by providing a large number of these holes in the light emitting layer.
【００１２】孔の形成は発光層の形成中、形成後、いず
れであっても良い。なお、発光層に孔が形成された後、
その上に別の半導体層を形成されたことにより、該孔が
埋まってしまっていても構わない。この孔を発光層に存
在させることが上記目的を得ることにつながるからであ
る。The holes may be formed during or after the formation of the light emitting layer. After the holes are formed in the light emitting layer,
The hole may be buried by forming another semiconductor layer thereon. This is because the presence of these holes in the light emitting layer leads to the above object.
【００１３】前記孔について特に制限はないが、特に発
光層の下部層に至るような貫通孔であると厚さ方向の欠
陥部を完全に除去できるため望ましい。また、孔の形成
箇所は、ランダムな形成であってもある程度欠陥を除去
できるのでそれでも良いが、特に積層半導体中の転位線
が発光層を通過する部位を含む領域に形成すると、発光
層全体の欠陥を除去できるため好ましい。Although there is no particular limitation on the hole, it is particularly preferable that the hole be a through hole reaching the lower layer of the light emitting layer because a defect in the thickness direction can be completely removed. In addition, the holes may be formed at random because the defects can be removed to some extent even if they are formed randomly. However, in particular, when the holes are formed in a region including a portion where a dislocation line in the stacked semiconductor passes through the light-emitting layer, This is preferable because defects can be removed.
【００１４】とりわけ、ＧａＮ系（ＩｎX ＧａY ＡｌZ
Ｎ：０≦Ｘ≦１、０≦Ｙ≦１、０≦Ｚ≦１、Ｘ＋Ｙ＋Ｚ
＝１）の半導体発光素子では、サファイアを基板として
用いることが多く、大きな格子不整合が原因の貫通転位
等の欠陥が生じやすいことから、前記した孔を発光層に
設けることの利点が大きい。また、サファイア以外の基
板、例えばＳｉＣ、Ｓｉ、ＧａＡｓ、ＺｎＯ、ＭｇＯ、
ＭｇＡｌ2 Ｏ4 、ＬＧＯ、ＬＡＯなどの基板を用いた場
合でも、前記孔の効果は同じである。In particular, GaN-based (In x Ga Y Al Z)
N: 0 ≦ X ≦ 1, 0 ≦ Y ≦ 1, 0 ≦ Z ≦ 1, X + Y + Z
In the semiconductor light emitting device of (1), sapphire is often used as a substrate, and defects such as threading dislocations are likely to occur due to large lattice mismatch. Therefore, there is a great advantage in providing the above holes in the light emitting layer. Further, substrates other than sapphire, for example, SiC, Si, GaAs, ZnO, MgO,
Even when a substrate such as MgAl 2 O 4 , LGO or LAO is used, the effect of the holes is the same.
【００１５】一方本発明者らは、発光層にＩｎＧａＮを
用いた場合、発光層に存在する微小孔を拡張させつつ、
発光層を覆うような成長が容易に行い得ることを見出し
た。なおここでいう微小孔とは、発光層を成長した段階
ですでに存在する孔のことを意味し、拡張により拡げた
孔と区別するために微小と表現しており、特に大きさに
ついて限定をするものではない。On the other hand, the present inventors have found that when InGaN is used for the light emitting layer, while expanding the micropores present in the light emitting layer,
It has been found that growth that covers the light emitting layer can be easily performed. The term “micropores” as used herein refers to pores that already exist at the stage of growing the light emitting layer, and is expressed as microscopic in order to distinguish it from the pores expanded by expansion. It does not do.
【００１６】かかる現象は次の作用によると考えてい
る。即ち、ＧａＮ系材料を気相成長する場合、ドロップ
レット（金属リッチな部分が生じる）生成、成膜、下地
層をエッチング、の３つのケースがあることが言われて
いる。前記気相エッチングを行う場合、微小孔は貫通転
位などに起因した欠陥であるため結晶性が悪いことが推
測され、微小孔のないところに比べ微小孔の部分が先に
エッチングされる。このエッチングにより微小孔を拡張
させた後に、もしくは拡張させつつ成膜する条件にする
ことで、発光層は貫通転位などの欠陥の部分を除去した
場所、つまり低転位領域のみとなる。This phenomenon is considered to be due to the following effects. That is, when a GaN-based material is vapor-phase grown, it is said that there are three cases: generation of droplets (where a metal-rich portion is generated), film formation, and etching of an underlayer. In the case of performing the vapor phase etching, it is presumed that the microholes are defects caused by threading dislocations or the like, so that the crystallinity is assumed to be poor. By setting the film forming conditions after or after expanding the micropores by this etching, the light emitting layer becomes only a portion where a defect portion such as a threading dislocation is removed, that is, only a low dislocation region.
【００１７】なお、上記説明では望ましい例としてＩｎ
ＧａＮの場合について記載したが、程度の差はあるもの
のＧａＮやＡｌＮにも平衡状態の３つのケースが存在す
るため、低転位な発光層としてＧａＮ系材料（ＩｎX Ｇ
ａY ＡｌZ Ｎ：０≦Ｘ≦１、０≦Ｙ≦１、０≦Ｚ≦１、
Ｘ＋Ｙ＋Ｚ＝１）何れでも良い。In the above description, a preferable example is In.
Although the case of GaN has been described, although there are three cases in which GaN and AlN are in an equilibrium state to varying degrees, a GaN-based material (In x G
a Y Al Z N: 0 ≦ X ≦ 1,0 ≦ Y ≦ 1,0 ≦ Z ≦ 1,
X + Y + Z = 1) Any value may be used.
【００１８】また、前記のエッチングの傾向は成長の雰
囲気によっても異なり、特に水素の含有率が多い場合は
エッチングの進行が促進されるため好ましい。エッチン
グの促進を考えると水素の含有量は１００％雰囲気でも
良いが、含有量が多すぎると発光層全体がエッチングさ
れる可能性があるため、０．１〜２０％程度が好まし
く、特に１〜１０％が好ましい。The tendency of the above-mentioned etching depends on the growth atmosphere. Particularly, when the content of hydrogen is large, the progress of the etching is promoted. Considering the promotion of etching, the content of hydrogen may be 100% atmosphere. However, if the content is too large, the entire light emitting layer may be etched. 10% is preferred.
【００１９】上記の水素含有量を変化させることで、発
光層の成長・微小孔の拡張・及び他の半導体層の成長を
反応炉から取り出すことなく、連続して行うことができ
る。これにより本発明の半導体発光素子の効率的な製造
が達成できる。By changing the hydrogen content, the growth of the light emitting layer, the expansion of the micropores, and the growth of other semiconductor layers can be performed continuously without taking out from the reactor. Thereby, efficient manufacture of the semiconductor light emitting device of the present invention can be achieved.
【００２０】上記では反応炉から取り出すことなく、連
続的に行う場合について述べたが、発光層を成長後一旦
成長装置から取り出し、ウエットエッチングなどの方法
により、微小孔を拡張し、その後再び半導体層を成長さ
せる方法でも良い。ウェットエッチングを用いた場合、
すでに存在する貫通転位などに起因した欠陥である微小
孔以外の転位や欠陥が内在する場所も優先的にエッチン
グされるため、エッチングで残った部分はより低転位な
場所となるためより好ましい。In the above, the case where the light emitting layer is continuously performed without taking it out of the reaction furnace has been described. However, once the light emitting layer is grown, it is once taken out of the growth apparatus, the micropores are expanded by a method such as wet etching, and then the semiconductor layer is again formed. The method of growing is good. When using wet etching,
The places where the dislocations and defects other than the micropores, which are defects caused by threading dislocations already existing, are also preferentially etched, so that the portion left after etching becomes a place with lower dislocations, which is more preferable.
【００２１】前述の気相成長方法としてはＭＯＣＶＤ
法、ＨＶＰＥ法、ＭＢＥ法など何れの方法でもよく、特
にＭＯＣＶＤ法では成長した膜の結晶性が良いものが出
来る点からもっとも望ましい。またウエットエッチング
は、熱アルカリ中につける方法やアルカリ中につけた状
態で紫外線を照射する方法などが挙げられる。微小孔を
拡張する方法としては上述のウエットエッチング以外に
も、例えば気相や液相でのエッチングでもよい。As the above-mentioned vapor phase growth method, MOCVD is used.
Method, HVPE method, MBE method, etc., and it is most preferable in the MOCVD method, since the grown film has good crystallinity. Examples of the wet etching include a method of immersing in hot alkali and a method of irradiating ultraviolet rays in a state of immersion in alkali. As a method for expanding the micropores, for example, etching in a gas phase or a liquid phase may be used in addition to the above-described wet etching.
【００２２】本発明でいう発光層とは、ダブルへテロ接
合構造の場合は活性層を意味し、シングルへテロ接合構
造、ホモ接合構造の場合は発光に関与する層のことを意
味する。The light emitting layer in the present invention means an active layer in the case of a double hetero junction structure, and means a layer involved in light emission in the case of a single hetero junction structure or a homo junction structure.
【００２３】[0023]
【実施例】次に本発明の具体的な実施例を説明する。 （実施例−１）図１は本発明を説明するための一実施例
である。図において、１は基板、２はバッファー層、３
はｎ型ＧａＮクラッド層、４はＩｎＧａＮ活性層、５は
ｐ型ＧａＮクラッド層をそれぞれ示している。なお６は
ｎ電極、７はｐ電極を示している。Next, specific examples of the present invention will be described. (Embodiment 1) FIG. 1 is an embodiment for explaining the present invention. In the figure, 1 is a substrate, 2 is a buffer layer, 3
Denotes an n-type GaN cladding layer, 4 denotes an InGaN active layer, and 5 denotes a p-type GaN cladding layer. Reference numeral 6 denotes an n-electrode and 7 denotes a p-electrode.
【００２４】基板１としてはサファイアＣ面を用いた。
まずこのサファイア基板１をＭＯＣＶＤ装置内に配置
し、水素雰囲気下で１１００℃まで昇温し、サーマルエ
ッチングを行った。その後、温度を５００℃まで下げＡ
ｌ原料としてトリメチルアルミニウム（以下ＴＭＡ）、
Ｎ原料としてアンモニアを流し、ＡｌＮ低温バッファー
層２を成長した。つづいて温度を１０００℃に昇温しＧ
ａ原料としてトリメチルガリウム（以下ＴＭＧ）を、Ｎ
原料としてアンモニアを、ドーパントとしてシランを流
し、３μｍ厚のｎ型のＧａＮクラッド層３を得た。その
後、成長雰囲気を水素から窒素に変えアンモニアを流し
た条件下で７００℃まで成長温度を下げた。７００℃に
安定した後Ｉｎ原料としてのトリメチルインジュウム
（以下ＴＭＩ）とＴＭＧ、アンモニアを流し、１００ｎ
ｍ厚のＩｎＧａＮ活性層４を得た。なおこのときのＴＭ
Ｇ、ＴＭＩのバブリングは窒素で行った。しかる後、雰
囲気中に流量比で１０％の水素を加え１０００℃まで昇
温した。この後ＴＭＧ、アンモニア及びドーパント原料
としてビスシクロペンタジエニルマグネシウム（以下Ｃ
ｐ２Ｍｇ）を流し、０．５μｍ厚のｐ型ＧａＮクラッド
層５を得た。As the substrate 1, a sapphire C plane was used.
First, the sapphire substrate 1 was placed in an MOCVD apparatus, and heated to 1100 ° C. in a hydrogen atmosphere to perform thermal etching. Thereafter, the temperature is lowered to 500 ° C.
l trimethylaluminum (TMA) as raw material,
Ammonia was flowed as the N source, and the AlN low-temperature buffer layer 2 was grown. Then raise the temperature to 1000 ° C and
a Trimethylgallium (hereinafter referred to as TMG)
Ammonia was flowed as a raw material, and silane was flowed as a dopant, to obtain an n-type GaN clad layer 3 having a thickness of 3 μm. Thereafter, the growth temperature was lowered to 700 ° C. under a condition in which the growth atmosphere was changed from hydrogen to nitrogen and ammonia was flowed. After the temperature was stabilized at 700 ° C., trimethyl indium (hereinafter referred to as TMI), TMG, and ammonia as an In material were flowed, and 100 n
An InGaN active layer 4 having a thickness of m was obtained. The TM at this time
G and TMI were bubbled with nitrogen. Thereafter, 10% of hydrogen was added to the atmosphere at a flow rate of 10%, and the temperature was raised to 1000 ° C. Thereafter, TMG, ammonia and biscyclopentadienyl magnesium (hereinafter referred to as C
(p2Mg) was flown to obtain a p-type GaN clad layer 5 having a thickness of 0.5 μm.
【００２５】このようにして得られたサンプルをドライ
エッチングによりｐ型層と発光層の一部をエッチング除
去し、ｎ型層を露出させ、ｎ型電極６、ｐ型電極７を形
成しＬＥＤを作成した。このＬＥＤをＴｏ−１８ステム
台にマウントし、光度の測定を行ったところ、２０ｍＡ
で２５ｍｃｄのものが得られた。なお得られたサンプル
の表面を光学顕微鏡で観測したところピット状の孔が観
測された。更に詳しく見るため走査型電子顕微鏡（以下
ＳＥＭ）で観察したところ拡張された孔が多数存在して
いた。The thus obtained sample is subjected to dry etching to remove a part of the p-type layer and the light emitting layer by etching, exposing the n-type layer, forming an n-type electrode 6 and a p-type electrode 7, and forming an LED. Created. When this LED was mounted on a To-18 stem base and the luminous intensity was measured, it was found to be 20 mA.
Of 25 mcd was obtained. When the surface of the obtained sample was observed with an optical microscope, pit-shaped holes were observed. Observation with a scanning electron microscope (hereinafter, SEM) revealed that many enlarged holes existed.
【００２６】（実施例−２）実施例−１のうち、活性層
の厚みを１０ｎｍとした以外は実施例−１と同じにして
ＬＥＤを作製した。このＬＥＤをＴｏ−１８ステム台に
マウントし、光度の測定を行ったところ、２０ｍＡで３
０ｍｃｄのものが得られた。また、これにより得られた
サンプルの表面を光学顕微鏡で観測したところ非常に綺
麗な面が観測された。更に詳しく見るためＳＥＭで３万
倍で観察したが、フラットな表面が得られていることが
観測された。更に詳しく見るため透過型電子顕微鏡（以
下ＴＥＭ）で活性層部を観察したところ１０ｎｍオーダ
ーの孔が多数存在していた。このことから、活性層上の
半導体層の成長により活性層の孔が埋め込まれていて
も、活性層に孔が開いていれば本発明の目的が達せられ
ることが判った。Example 2 An LED was manufactured in the same manner as in Example 1, except that the thickness of the active layer was changed to 10 nm. This LED was mounted on a To-18 stem base and the luminous intensity was measured.
A product of 0 mcd was obtained. When the surface of the sample thus obtained was observed with an optical microscope, a very beautiful surface was observed. Observation with a SEM at a magnification of 30,000 was performed for more detailed observation, but it was observed that a flat surface was obtained. Observation of the active layer with a transmission electron microscope (hereinafter referred to as TEM) revealed that many holes of the order of 10 nm existed. From this, it was found that even if the holes in the active layer were buried by the growth of the semiconductor layer on the active layer, the object of the present invention could be achieved if the holes were opened in the active layer.
【００２７】（実施例−３）実施例−１と同様にして発
光層を成長した後、一旦成長を中断し、ＭＯＣＶＤ装置
からサンプルを取り出した。このサンプルをアルカリ溶
液であるＫＯＨ中につけ、Ｈｅ−Ｘｅランプを照射し、
エッチング処理を行った。この後再びＭＯＣＶＤ装置内
に配置し、窒素とアンモニアのみの雰囲気で１０００℃
まで昇温した。その後ＴＭＧ、アンモニア、Ｃｐ２Ｍｇ
を流しｐ型ＧａＮクラッド層を得た。これにより得られ
たサンプルの表面を光学顕微鏡で観測したところ全体的
にややあれた感じがし、ピット状の孔が観測された。更
に詳しく見るためＳＥＭで観察したところ、全体的に凹
凸があり、エッチングで拡張された孔が多数観測され
た。またＬＥＤを作成し、光度を測定したところ、２８
ｍｃｄであった。(Embodiment 3) After the light emitting layer was grown in the same manner as in Embodiment 1, the growth was suspended once, and a sample was taken out from the MOCVD apparatus. This sample was immersed in an alkaline solution, KOH, and irradiated with a He-Xe lamp.
An etching process was performed. After that, it is placed again in the MOCVD apparatus, and is heated to 1000 ° C. in an atmosphere containing only nitrogen and ammonia.
Temperature. Then TMG, ammonia, Cp2Mg
To obtain a p-type GaN clad layer. Observation of the surface of the sample thus obtained with an optical microscope showed that the surface was somewhat rough and pit-like holes were observed. Observation with a SEM for more detailed observation revealed that there were unevenness as a whole and many holes expanded by etching. When an LED was created and its luminous intensity was measured, 28
mcd.
【００２８】（比較例−１）上記した実施例−１のプロ
セスの内、発光層成長後の孔の拡張処理を行わなかった
こと以外には実施例−１と同様としてサンプルを作成し
た。これにより得られたサンプルの表面を光学顕微鏡で
観測したところ非常に綺麗な面が観測された。更に詳し
く見るためＳＥＭで観察したところ、孔らしい痕跡はあ
るものの埋め込まれたような状態になっておりフラット
な表面に近いものが得られていることが観測された。ま
たＬＥＤを作成し、光度を測定したところ、１５ｍｃｄ
であった。(Comparative Example 1) A sample was prepared in the same manner as in Example 1 except that the hole expansion process after the growth of the light emitting layer was not performed. When the surface of the sample thus obtained was observed with an optical microscope, a very beautiful surface was observed. Observation with an SEM for more detailed observation showed that although there were traces like holes, they were in a buried state, and that something close to a flat surface was obtained. When an LED was created and the luminous intensity was measured,
Met.
【００２９】上記の実施例ではダブルへテロ接合構造に
ついて説明したが、シングルへテロ、ホモ接合構造、単
一量子井戸構造（ＳＱＷ）、多重量子井戸構造（ＭＱ
Ｗ）など他の構造についても適用可能であり、発明を活
用できるものすべての構造において適用であることは言
うまでもない。In the above embodiment, a double hetero junction structure has been described. However, a single hetero structure, a homo junction structure, a single quantum well structure (SQW), and a multiple quantum well structure (MQ
It is needless to say that the present invention can be applied to other structures such as W) and can be applied to all structures that can utilize the invention.
【００３０】[0030]
【発明の効果】本発明を用いることで、低転位な領域を
発光層として用いることができ、発光・寿命特性に優れ
た半導体発光素子を作成することができる。According to the present invention, a low-dislocation region can be used as a light-emitting layer, and a semiconductor light-emitting device having excellent light-emitting and life characteristics can be manufactured.
【図１】本発明の半導体発光素子の一実施例を示す断面
図である。FIG. 1 is a sectional view showing one embodiment of a semiconductor light emitting device of the present invention.
１ サファイア基板 ２ ＡｌＮバッファー層 ３ ｎ−ＧａＮクラッド層 ４ ＩｎＧａＮ発光層 ５ ｐ−ＧａＮクラッド層 ６ ｎ電極 ７ ｐ電極 Reference Signs List 1 sapphire substrate 2 AlN buffer layer 3 n-GaN cladding layer 4 InGaN light emitting layer 5 p-GaN cladding layer 6 n electrode 7 p electrode
Claims (10)
とする半導体発光素子において、前記積層半導体層にお
ける低転位領域を発光層として用いてなる半導体発光素
子。1. A semiconductor light emitting device in which a part of a plurality of stacked semiconductor layers is a light emitting layer, wherein a low dislocation region in the stacked semiconductor layer is used as a light emitting layer.
とする半導体発光素子において、前記発光層には多数の
孔が形成されている半導体発光素子。2. A semiconductor light-emitting device in which a plurality of stacked semiconductor layers have a part as a light-emitting layer, wherein the light-emitting layer has a large number of holes formed therein.
求項２記載の半導体発光素子。3. The semiconductor light emitting device according to claim 2, wherein said holes are holes penetrating the light emitting layer.
光層を通過する部位を含む領域に形成されている請求項
２記載の半導体発光素子。4. The semiconductor light emitting device according to claim 2, wherein said hole is formed in a region including a portion where a dislocation line in said laminated semiconductor layer passes through said light emitting layer.
とを特徴とする請求項２記載の半導体発光素子。5. The semiconductor light emitting device according to claim 2, wherein the light emitting layer is made of a GaN-based semiconductor material.
前記微小孔の深さ及び径を拡張させた後、もしくは拡張
させつつ、その上に他の半導体層を成長させることを特
徴とする半導体発光素子の製造方法。6. A light emitting layer having micropores on its surface is grown,
A method for manufacturing a semiconductor light emitting device, wherein another semiconductor layer is grown thereon after or while expanding the depth and diameter of the micropore.
とを特徴とする請求項６記載の半導体発光素子の製造方
法。7. The method according to claim 6, wherein the light emitting layer is made of a GaN-based semiconductor material.
うことを特徴とする請求項７記載の半導体発光素子の製
造方法。8. The method according to claim 7, wherein the expansion of the micropores is performed in a hydrogen-containing atmosphere.
導体層の成長を水素含有量を変化させることで、反応炉
から取り出すことなく、連続して行うことを特徴とする
請求項８記載の半導体発光素子の製造方法。9. The method according to claim 8, wherein the growth of the light emitting layer, the expansion of the micropores, and the growth of the other semiconductor layers are performed continuously by changing the hydrogen content without taking out from the reactor. The manufacturing method of the semiconductor light emitting device according to the above.
出し、欠陥部上の発光層を除去した後、その上に他の半
導体層を成長させることを特徴とする請求項６記載の半
導体発光素子の製造方法。10. The semiconductor light emitting device according to claim 6, wherein after the light emitting layer is grown, the light emitting layer is removed from the reactor, the light emitting layer on the defective portion is removed, and another semiconductor layer is grown thereon. Device manufacturing method.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1344097A JP3958818B2 (en) | 1997-01-08 | 1997-01-08 | Semiconductor light emitting device and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1344097A JP3958818B2 (en) | 1997-01-08 | 1997-01-08 | Semiconductor light emitting device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10200215A true JPH10200215A (en) | 1998-07-31 |
| JP3958818B2 JP3958818B2 (en) | 2007-08-15 |
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ID=11833201
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1344097A Expired - Fee Related JP3958818B2 (en) | 1997-01-08 | 1997-01-08 | Semiconductor light emitting device and manufacturing method thereof |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000133883A (en) * | 1998-10-22 | 2000-05-12 | Nichia Chem Ind Ltd | Nitride semiconductor device |
| JP2005532692A (en) * | 2002-07-11 | 2005-10-27 | ユニバーシティ・カレッジ・コークーナショナル・ユニバーシティ・オブ・アイルランド，コーク | Defect reduction in semiconductor materials. |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57102081A (en) * | 1980-12-17 | 1982-06-24 | Matsushita Electric Ind Co Ltd | Manufacture of luminous element |
| JPH04127521A (en) * | 1990-09-19 | 1992-04-28 | Fujitsu Ltd | Manufacture of semiconductor substrate |
| JPH06314823A (en) * | 1993-04-28 | 1994-11-08 | Toyoda Gosei Co Ltd | Gallium nitride-based compound semiconductor light emitting device and manufacturing method thereof |
-
1997
- 1997-01-08 JP JP1344097A patent/JP3958818B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57102081A (en) * | 1980-12-17 | 1982-06-24 | Matsushita Electric Ind Co Ltd | Manufacture of luminous element |
| JPH04127521A (en) * | 1990-09-19 | 1992-04-28 | Fujitsu Ltd | Manufacture of semiconductor substrate |
| JPH06314823A (en) * | 1993-04-28 | 1994-11-08 | Toyoda Gosei Co Ltd | Gallium nitride-based compound semiconductor light emitting device and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000133883A (en) * | 1998-10-22 | 2000-05-12 | Nichia Chem Ind Ltd | Nitride semiconductor device |
| JP2005532692A (en) * | 2002-07-11 | 2005-10-27 | ユニバーシティ・カレッジ・コークーナショナル・ユニバーシティ・オブ・アイルランド，コーク | Defect reduction in semiconductor materials. |
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| Publication number | Publication date |
|---|---|
| JP3958818B2 (en) | 2007-08-15 |
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