JPH10204643A - Vapor phase growth equipment - Google Patents

Abstract

(57) [Summary] An object of the present invention is to uniformly flow gas into a substrate surface. A processing vessel (2) having a gas inlet (22) at the top is provided.
1), disposed in the processing container (21), a substrate receiver (24) on which a wafer (23) is placed, and disposed in the processing container (21) above the substrate receiver (24), A gas straightening nozzle plate (26) having a number of straightening holes (27) for sending gas to the wafer (23),
A gas guide plate (31) disposed in the processing container (21) and inclined with respect to the flow direction of the gas introduced from the gas inlet (22). .

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus, and more particularly to a vapor phase growth apparatus having a gas guide plate for changing the flow of gas introduced from a gas inlet so as to generate a vortex from the outer periphery of a substrate. .

[0002]

2. Description of the Related Art Conventionally, as a vapor phase growth apparatus, for example, one having a configuration shown in FIGS. 1A and 1B is known. Here, FIG. 1A is a sectional view of a vapor phase growth apparatus, and FIG.
FIG. 2 is a plan view of FIG.

[0003] Reference numeral 1 in the figure denotes a cylindrical processing vessel having a gas inlet 2 for introducing a material gas at an upper portion thereof. In the processing vessel 1, a substrate receiver 4 on which a circular substrate (wafer) 3 is placed is arranged. An annular gas rectifying nozzle plate stopper member 5 that is locked to the inner wall of the processing container 1 is disposed in the processing container 1, and a gas rectifying nozzle plate 6 is located above the wafer 3 on the stopper member 5. It is installed as follows. Here, a large number of rectifying holes 7 are provided at equal intervals in the gas rectifying nozzle plate.

[0004] A processing vessel lid 9 is placed on the processing vessel 1 via an O-ring 8. The processing container 1
A cylindrical member 11 having a gas exhaust port 10 for exhausting a material gas is attached via an O-ring 12 to a lower portion of the cylindrical member.
Reference numeral 13 indicates a material gas, and reference numeral 14 indicates a gas flow.

[0005] Another conventional vapor phase growth apparatus is shown in FIG.
The configuration shown in (A) and (B) is known. Here, FIG. 2A is a cross-sectional view of the vapor phase growth apparatus, and FIG. 2B is a plan view of FIG. 2A. However, the same members as those in FIG. In the vapor phase growth apparatus of FIG.
The difference from FIG. 1 is that a disk-shaped block 15 for changing the flow of the material gas is provided on the back side of the processing vessel lid 9 located above the gas rectification nozzle plate 6.

[0006]

By the way, in the case of the vapor phase growth apparatus shown in FIG. 1, the source gas 3 is introduced into the processing vessel 1 from the gas inlet 2 and almost all goes straight as it is to the inner wall of the processing vessel 1. After flowing along the inner wall of the processing container 1, it is sent to the gas rectifying nozzle plate 6. Therefore, the gas introduced into the processing container 1 cannot be spouted toward the center of the gas rectification nozzle plate 6 and poured into the rectification holes 7 evenly.

On the other hand, in the case of the vapor phase growth apparatus shown in FIG. 2, since the disk-shaped block 15 is provided so as to block the flow of the gas sent from the gas inlet 2, the material gas 3 flows from the gas inlet 2. After being introduced into the processing vessel 1, it flows along the outer peripheral wall of the block 15 and the inner wall of the processing vessel 1 without going straight. However, in the case of the apparatus shown in FIG. 2, similarly to FIG. 1, there is a problem that the material gas cannot be uniformly poured into the rectifying holes 7 of the gas rectifying nozzle plate 6.

The present invention has been made in view of the above circumstances, and provides a gas guide plate for changing the direction of gas so that a material gas generates a vortex from the outer periphery of the substrate and flows toward the center of the gas rectifying nozzle plate. Accordingly, it is an object of the present invention to provide a vapor phase growth apparatus capable of uniformly flowing a gas into a substrate surface. Also, the present invention provides a gas rectifying nozzle plate having a configuration in which the number of rectifying holes increases from the outer peripheral portion toward the center portion, or a gas rectifying nozzle plate having a configuration in which the diameter of the rectifying holes increases from the outer peripheral portion toward the center portion. An object of the present invention is to provide a vapor phase growth apparatus capable of more uniformly sending a material gas to a substrate surface by using a nozzle plate as compared with a normal gas flow plate.

[0009]

According to the present invention, there is provided a processing container having a gas inlet at an upper portion thereof, a substrate receiver disposed in the processing container and mounting a circular substrate thereon, A gas rectifying nozzle plate disposed above the substrate receiver and having a plurality of rectifying holes for sending gas to the substrate, and disposed in the processing container and inclined with respect to a flow direction of the gas introduced from the gas inlet; And a gas guide plate.

In the present invention, the gas guide plate is arranged to be inclined with respect to the flow direction of the gas introduced from the gas inlet, and the gas introduced by the inclined gas guide plate is arranged. It is preferable to generate a vortex and send it to the gas rectifying nozzle plate. Here, the inclination angle of the gas guide plate cannot be set strictly, but may be any angle at which a vortex is generated.

In the present invention, the gas rectifying nozzle plate has, for example, a structure in which the number of rectifying holes increases from the outer peripheral portion toward the central portion (see FIG. 3), or from the outer peripheral portion toward the central portion. Therefore, a configuration in which the diameter of the rectifying hole is increased (see FIG. 4) is exemplified, but the configuration is not limited thereto.

(Operation) In the present invention, since the gas guide plate is arranged so that the gas guide plate is inclined with respect to the flow of the material gas introduced from the gas inlet, the material gas has an outer periphery. Flows like swirling from. Then, the flowing gas passes through the rectifying holes of the gas rectifying nozzle plate and flows uniformly on the substrate surface.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a vapor phase growth apparatus according to one embodiment of the present invention will be described with reference to FIGS.
Here, FIG. 3A is a sectional view of the vapor phase growth apparatus, and FIG.
FIG. 3B is a plan view of FIG.

Reference numeral 21 in the drawing denotes a cylindrical processing vessel having a gas inlet 22 for introducing a material gas at an upper portion thereof. In the processing container 21, a substrate receiver 24 on which a circular substrate (wafer) 23 is placed is arranged. An annular gas rectifying nozzle plate stopper member 25 that is engaged with the inner wall of the processing container 21 is disposed in the processing container 21, and a gas rectifying nozzle plate 26 is located on the stopper member 25 above the wafer 23. It is installed as follows. Here, the gas rectifying nozzle plate 26 has a large number of rectifying holes 27, and the rectifying holes 27 are configured such that the number of holes increases from the outer peripheral portion toward the central portion as can be seen from FIG. It has become.

A processing vessel lid 29 is placed on the processing vessel 21 via an O-ring 28. A disk-shaped block 30 is provided on the back side of the processing vessel lid 29 located above the gas rectification nozzle plate 26. The processing container lid 29
And the processing vessel 21 located between the block 27 and the stopper 25
Inside, a gas guide plate 31 for changing the flow of the material gas introduced from the gas inlet 22 is arranged. This gas guide plate
Numeral 31 is inclined with respect to the flow of the material gas as shown in FIG. 3B so as to change the flow of the material gas so as to generate a vortex from the outer peripheral side of the gas flow nozzle plate 26.
A cylindrical member 33 having a gas exhaust port 32 for exhausting a material gas is attached to a lower portion of the processing container 21 via an O-ring 34. Reference numeral 35 indicates the flow of the material gas, and reference numeral 36 indicates the flow of the material gas 35.

According to the vapor phase growth apparatus of the above embodiment,
Material gas 35 introduced from the gas inlet 22 into the processing vessel 21 located between the processing vessel lid 29, the block 27, and the stopper 25.
Since the gas guide plate 31 that changes the direction of the flow of the gas is configured to be inclined, the material gas 35 ejected from the gas inlet 22 is swirled by the gas guide plate 31 from the outer peripheral side of the gas straightening nozzle plate 26. It flows like winding. Therefore, the material gas 35 flows evenly over the surface of the wafer 23 through the rectifying holes 27 of the gas rectifying nozzle plate 26. Further, the material gas reaching the surface of the wafer 23 generally tends to flow from the center to the periphery, but the gas rectification nozzle plate 26 has a larger number of rectification holes 27 from the outer periphery toward the center. With this configuration, the material gas can be more uniformly sent to the surface of the wafer 23 as compared with the case of a normal gas rectifying plate in which rectifying holes are formed in a lattice shape.

In the above embodiment, the gas rectifying nozzle plate has a structure in which the number of rectifying holes increases from the outer peripheral portion toward the central portion. However, the present invention is not limited to this. For example, FIG. As shown in the figure, a gas rectification nozzle plate having a configuration in which the diameter of the rectification hole increases from the outer peripheral portion toward the center portion may be used.

[0018]

As described above in detail, according to the present invention, the gas guide plate for changing the direction of the gas is inclined so that the material gas generates a vortex from the outer periphery of the substrate and flows toward the center of the gas rectifying nozzle plate. With this arrangement, a gas can be uniformly supplied to the substrate surface, and a vapor deposition apparatus having a good production yield of the substrate can be provided, which can make the growth distribution of vapor deposition uniform on the substrate. According to the present invention, the gas rectifying nozzle plate has a configuration in which the number of rectifying holes increases from the outer peripheral portion toward the central portion, or the gas rectifying hole has a configuration in which the diameter of the rectifying holes increases from the outer peripheral portion toward the central portion. By using the gas rectifying nozzle plate, it is possible to provide a vapor phase growth apparatus capable of more uniformly sending the material gas to the substrate surface as compared with a normal gas rectifying plate.

[Brief description of the drawings]

FIG. 1 is an explanatory view of a conventional vapor phase growth apparatus, and FIG.
1A is a cross-sectional view of the vapor phase growth apparatus, and FIG.
FIG.

FIG. 2 is an explanatory view of another conventional vapor phase growth apparatus.
2A is a cross-sectional view of the vapor phase growth apparatus, and FIG.
FIG.

FIG. 3 is an explanatory view of a vapor phase growth apparatus according to one embodiment of the present invention. FIG. 3 (A) is a sectional view of the vapor phase growth apparatus, and FIG.
FIG. 3B is a plan view of FIG.

FIG. 4 is a plan view of another gas rectification nozzle plate different from the gas rectification nozzle plate of the vapor phase growth apparatus according to one embodiment of the present invention.

[Explanation of symbols]

 21: Processing container, 22: Gas inlet, 23: Wafer, 24: Substrate receiver, 26: Gas rectifying nozzle plate, 27: Rectifying hole, 29: Processing container lid, 30: Disc-shaped block, 31: Gas guide plate .

Claims (3)

[Claims] 1. A processing container having a gas inlet at the top,
A substrate receiver disposed in the processing container, on which a circular substrate is placed, and a gas flow rectifying nozzle plate disposed above the substrate receiver in the processing container and having a plurality of flow rectifying holes for sending gas to the substrate. And a gas guide plate disposed in the processing vessel and inclined with respect to the flow direction of the gas introduced from the gas introduction port. 2. The vapor phase growth apparatus according to claim 1, wherein the gas rectification nozzle plate has a configuration in which the number of rectification holes increases from an outer peripheral portion toward a central portion. 3. The vapor phase growth apparatus according to claim 1, wherein the gas rectification nozzle plate has a configuration in which a diameter of a rectification hole increases from an outer peripheral portion toward a central portion.