JPH10209231A - Probe device and inspection method using probe device - Google Patents
Probe device and inspection method using probe deviceInfo
- Publication number
- JPH10209231A JPH10209231A JP9019857A JP1985797A JPH10209231A JP H10209231 A JPH10209231 A JP H10209231A JP 9019857 A JP9019857 A JP 9019857A JP 1985797 A JP1985797 A JP 1985797A JP H10209231 A JPH10209231 A JP H10209231A
- Authority
- JP
- Japan
- Prior art keywords
- probe
- probe needle
- plate
- needle
- contact resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
(57)【要約】
【課題】 被検査体の電気的特性を検査するプロ−ブ装
置において、検査によってプロ−ブ針に付着する異物の
検出手段と、必要に応じて適宜前記異物を除去するクリ
−ニング手段とを備え、検査時の接触不良を防止すると
共にプロ−ブ針の寿命を延長することを目的とする。
【解決手段】 被検査体120 を載置する載置台40に近接
する位置にコントロ−ルユニット250 を設け、前記コン
トロ−ルユニット250 により、プロ−ブ針10とプレ−ト
60との接触抵抗値を基に前記プロ−ブ針10のクリ−ニン
グの可否を判断するとともに、複数のプロ−ブ針から成
るプロ−ブカ−ドの取替えの可否を判断するプログラム
を記録した記録媒体を前記コントロ−ルユニット250 に
備え、適切な時期にプロ−ブ針のクリ−ニングを実施で
きるようにして、クリ−ニング回数を最小限に押さえる
ことができるようにする。
PROBLEM TO BE SOLVED: To provide a probe device for inspecting electrical characteristics of an object to be inspected, a means for detecting foreign matter adhering to a probe needle by inspection, and removing the foreign matter as needed. An object of the present invention is to provide a cleaning means for preventing poor contact at the time of inspection and extending the life of the probe needle. A control unit (250) is provided at a position close to a mounting table (40) on which an object to be inspected (120) is mounted, and the probe unit (10) is connected to the plate (10) by the control unit (250).
A program for determining whether to clean the probe needle 10 based on the contact resistance value with the probe needle 60 and for determining whether or not to replace a probe card composed of a plurality of probe needles is recorded. A recording medium is provided in the control unit 250 so that cleaning of the probe needle can be performed at an appropriate time so that the number of times of cleaning can be minimized.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、プロ−ブ装置及び
プロ−ブ装置による検査方法に関し、特に、被検査体の
電気的特性を検査するプロ−ブ針の接触抵抗測定機構と
クリ−ニング機構を具備したプロ−ブ装置及びプロ−ブ
装置による検査方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe apparatus and an inspection method using the probe apparatus, and more particularly, to a mechanism for measuring contact resistance of a probe needle for inspecting electrical characteristics of an object to be inspected and cleaning. The present invention relates to a probe device having a mechanism and an inspection method using the probe device.
【0002】[0002]
【従来の技術】従来この種のプロ−ブ装置としては、水
平、垂直及び水平回転可能な載置台上に載置される半導
体ウエハ等の被検査体の電極パッドにプロ−ブ針を接触
させて電気的特性を検査するプロ−ブ装置が知られてい
る。このプロ−ブ装置は、一般に、プロ−ブカ−ドに傾
斜状に植設された多数のプロ−ブ針を半導体ウエハの電
極パッドに接触させて電気的特性を検査するものであ
る。2. Description of the Related Art Conventionally, as a probe apparatus of this type, a probe needle is brought into contact with an electrode pad of an object to be inspected such as a semiconductor wafer mounted on a mounting table which can be rotated horizontally, vertically and horizontally. 2. Description of the Related Art A probe device for inspecting an electric characteristic by using a probe is known. This probe apparatus generally inspects electrical characteristics by bringing a large number of probe needles, which are obliquely implanted in a probe card, into contact with electrode pads of a semiconductor wafer.
【0003】ところで、近年の半導体デバイスでは、微
細化に伴い電極パッドの配列が複雑化及び多数化する傾
向にあり、前記傾斜状プロ−ブカ−ドを使用したプロ−
ブ装置による検査では各電極パッドに正確に接触するこ
とが困難になる。そこで、垂直状プロ−ブ針を配置した
プロ−ブカ−ドにより、配列が複雑化及び多数化した電
極パッドに均一にプロ−ブ針を圧接した状態で検査でき
る技術が開発されている。In recent semiconductor devices, the arrangement of electrode pads tends to be complicated and large in number with miniaturization.
It is difficult to make accurate contact with each electrode pad in the inspection by the probe device. Therefore, a technique has been developed which can perform an inspection in a state where the probe needles are uniformly pressed against the electrode pads having a complicated arrangement and a large number of electrodes by using a probe card on which vertical probe needles are arranged.
【0004】しかしながら、この種のプロ−ブ針は半導
体ウエハ上の電極パッドに接触させるため、検査中にパ
ッドの材質であるアルミニウム、タングステン等の異物
が付着するため被検査体の検査に支障をきたすだけでな
くプロ−ブカ−ド自体の寿命を短くするという問題が生
じてくる。However, since such a probe needle is brought into contact with an electrode pad on a semiconductor wafer, foreign materials such as aluminum and tungsten, which are the material of the pad, adhere to the probe during the inspection, which hinders the inspection of the inspection object. In addition to the problem, the problem of shortening the life of the probe card itself arises.
【0005】そのため、特開平4-177849号公報に見られ
るウエハステ−ジに研磨材を取り付けた一体型タイプの
装置や、特開平4-364746号公報に見られるウエハステ−
ジの近傍にクリ−ニング材を取り付けたタイプのプロ−
ブ装置を用いてプロ−ブ針のクリ−ニングを行ってい
る。[0005] Therefore, an integrated type apparatus in which an abrasive is attached to a wafer stage disclosed in JP-A-4-177849, or a wafer stage disclosed in JP-A-4-364746.
Type with a cleaning material attached near the edge
The probe needle is cleaned using a probe device.
【0006】前記従来のプロ−ブ装置は、プロ−ブ針に
付着したアルミニウムやシリコンの異物を装置内に取り
付けたクリ−ニング材を接触させて取り除いている。取
り除く頻度としては、任意のウエハ毎やチップ毎で設定
し、クリ−ニングを行う。In the above-described conventional probe apparatus, foreign matters such as aluminum and silicon adhered to the probe needle are removed by contacting a cleaning material attached in the apparatus. The frequency of removal is set for each wafer or chip and cleaning is performed.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、前記従
来のプロ−ブ装置では、クリ−ニング時期の設定がアル
ミニウムやシリコン等の異物の付着よりも遅い場合、従
来に見られる測定不良を引き起こしていた。However, in the above-mentioned conventional probe apparatus, when the setting of the cleaning time is later than the adhesion of the foreign matter such as aluminum or silicon, a measurement failure which has been conventionally observed is caused. .
【0008】また、反対に、異物の付着よりも早すぎる
場合、プロ−ブ針がクリ−ニング材と接触する回数が増
加し、プロ−ブカ−ド自体の寿命が短くなるという問題
がある。On the other hand, if it is too soon before the foreign matter adheres, the number of times that the probe needle comes into contact with the cleaning material increases, which causes a problem that the life of the probe card itself is shortened.
【0009】本発明は前述の問題点にかんがみ、前記従
来技術の問題点を解消して、プロ−ブカ−ドの寿命を飛
躍的に延長させることができるプロ−ブ装置を提供する
ことを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has as its object to provide a probe apparatus which can solve the above-mentioned problems of the prior art and can drastically extend the life of a probe card. And
【0010】[0010]
【課題を解決するための手段】本発明のプロ−ブ装置
は、プロ−ブ針を被検査体の電極パッドに接触させて前
記被検査体の電気的特性を検査するプロ−ブ装置に、前
記被検査体を載置する載置台(ウエハステ−ジ)に近接
する位置にコントロ−ルユニットを新に設け、前記コン
トロ−ルユニットに前記プロ−ブ針の接触抵抗測定用プ
レ−トと前記プロ−ブ針の研磨用クリ−ニング材を備え
るとともに、前記プロ−ブ針と前記プレ−トとの接触抵
抗値を基に前記プロ−ブ針のクリ−ニングの可否、並び
に前記プロ−ブ針の磨耗の程度を評価して寿命を判断す
るプログラムを記録した記録媒体を備えたプロ−ブ装置
を用いる。A probe device according to the present invention comprises a probe device for inspecting electrical characteristics of a device under test by bringing a probe needle into contact with an electrode pad of the device under test. A control unit is newly provided at a position close to a mounting table (wafer stage) on which the inspection object is mounted, and a plate for measuring contact resistance of the probe needle and the probe are provided on the control unit. A cleaning material for polishing the probe needle, whether or not the probe needle can be cleaned based on a contact resistance value between the probe needle and the plate; A probe device having a recording medium in which a program for evaluating the degree of wear and judging the life is recorded is used.
【0011】また、本発明のプロ−ブ装置による検査方
法は、プロ−ブ装置による検査方法において、前記プロ
−ブ装置内にコントロ−ルユニットを設け、前記コント
ロ−ルユニットにより、プロ−ブ針と接触抵抗測定用プ
レ−トとの接触抵抗値を基に、前記プロ−ブ針のクリ−
ニングの可否、及び前記プロ−ブ針の磨耗の程度を評価
して寿命を判断して、前記プロ−ブ針のメンテナンスを
自動的に行うことを特徴としている。Further, the inspection method using the probe device according to the present invention is the inspection method using the probe device, wherein a control unit is provided in the probe device, and the probe needle is connected to the probe unit by the control unit. Based on the contact resistance value with the contact resistance measurement plate, the probe needle
The present invention is characterized in that maintenance of the probe needle is automatically performed by evaluating the life of the probe needle by evaluating whether or not the probe needle is worn and the degree of wear of the probe needle.
【0012】[0012]
【0013】[0013]
【実施例】以下に、本発明の実施例を、図面を参照しな
がら説明する。図1は、本発明の一実施例に係わる測定
系ユニットの半導体ウエハ測定系コントロ−ルユニット
とプロ−ブ装置の要部構成を示す概略図である。図6は
従来の測定系ユニットを構成する半導体ウエハ測定系コ
ントロ−ルユニットとプロ−ブ装置を示す。図2は本発
明の一実施例に係わるプロ−ブ装置の要部概略図を示
す。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic view showing a semiconductor wafer measuring system control unit of a measuring system unit according to an embodiment of the present invention and a main configuration of a probe apparatus. FIG. 6 shows a semiconductor wafer measuring system control unit and a probe device constituting a conventional measuring system unit. FIG. 2 is a schematic view showing a main part of a probe apparatus according to one embodiment of the present invention.
【0014】図3はプレ−ト及びクリ−ニング材の取付
け状態の分解斜視図、図4はプレ−ト及びクリ−ニング
材の取付け状態を示す断面図である。本発明の一実施例
に係わるプロ−ブ装置は、図6に示す従来の測定系ユニ
ットに新たに接触抵抗測定及びクリ−ニング用のコント
ロ−ルユニット250 を取り付けた構成である。前記コン
トロ−ルユニット250 による制御フロ−の概略を図1に
従って説明する。FIG. 3 is an exploded perspective view showing a state where the plate and the cleaning material are mounted, and FIG. 4 is a sectional view showing a state where the plate and the cleaning material are mounted. The probe apparatus according to one embodiment of the present invention has a configuration in which a control unit 250 for measuring and cleaning contact resistance is newly attached to the conventional measurement system unit shown in FIG. An outline of a control flow by the control unit 250 will be described with reference to FIG.
【0015】複数のプロ−ブ針が取り付けられているプ
ロ−ブカ−ドの各ピンの接触抵抗を測定し、前記測定値
が指定の値( スペック値) の範囲外になるとクリ−ニン
グを行う。クリ−ニングを行った後、再びプロ−ブ針と
プレ−トとの接触抵抗を測定する。接触抵抗値がスペッ
ク値の範囲外であれば再度クリ−ニングを行って接触抵
抗値を計測する。指定した複数回、クリ−ニングを行っ
ても接触抵抗値がスペック値の範囲に納まらなければプ
ロ−ブカ−ドの取替えを行う。前記制御フロ−に従って
プロ−ブ針のクリ−ニングと交換を適宜実施する。[0015] The contact resistance of each pin of the probe card to which a plurality of probe needles are attached is measured, and when the measured value is out of a specified value (spec value), cleaning is performed. . After the cleaning, the contact resistance between the probe needle and the plate is measured again. If the contact resistance value is out of the range of the specification value, the cleaning is performed again to measure the contact resistance value. If the contact resistance value does not fall within the range of the specification value even after performing the cleaning a specified number of times, the probe card is replaced. In accordance with the above control flow, cleaning and replacement of the probe needle are appropriately performed.
【0016】本実施形態のプロ−ブ装置の構成は、図2
に示すように、複数のプロ−ブ針10をプロ−ブ針固定ブ
ロック20を介して取り付けたプロ−ブカ−ド30と、前記
プロ−ブカ−ド30の下方においてX 、Y 及びZ 方向に移
動可能に配置した載置台40と、前記載置台40の側辺に取
り付けられたクリ−ニング材50及びプレ−ト60とプロ−
ブ針10の接触抵抗を測定し可否判定をする前記コントロ
−ルユニット250(図示せず) を備えている。The structure of the probe device of this embodiment is shown in FIG.
As shown in FIG. 1, a probe card 30 having a plurality of probe needles 10 attached thereto via a probe needle fixing block 20, and an X, Y and Z direction below the probe card 30. A mounting table 40 movably disposed, a cleaning material 50 and a plate 60 attached to the side of the mounting table 40,
The control unit 250 (not shown) for measuring the contact resistance of the needle 10 and determining whether or not the contact is possible is provided.
【0017】載置台40は、Y 方向に沿って配置されるY
方向レ−ル70上に搭載されるY ステ−ジ80と、X 方向に
沿って配置されるX 方向レ−ル90上に搭載されるX ステ
−ジ100 と、このX ステ−ジ100 上にZ 方向に上下動で
き、任意の角度θ回転が可能なチャック110 で構成され
ている。このチャック110 は上面にある吸引方法により
被検査体である半導体ウエハ120 を吸引保持できる。The mounting table 40 is arranged along the Y direction.
A Y stage 80 mounted on the directional rail 70, an X stage 100 mounted on an X direction rail 90 arranged along the X direction, and an X stage 100 mounted on the X stage 100 The chuck 110 is configured to be able to move up and down in the Z direction and to rotate at an arbitrary angle θ. The chuck 110 can suction-hold the semiconductor wafer 120 as the object to be inspected by the suction method on the upper surface.
【0018】クリ−ニング材50は、セラミック、ナイロ
ン製繊維、ポリエステル製繊維等のような、研磨時に針
先をなるべく傷めない様な材質であれば何でも良い。プ
レ−ト60は、導電性の材質であればよいが、好ましくは
抵抗値の低い金を用いた方が良い。本実施例では金プレ
−トを用いる。プレ−ト60のサイズや形状は図2に示し
た以外にどのようなサイズ、形状でも良い。また、針先
を複数回接触させるため、固定式よりも定期的に交換で
きる着脱式を採用している。The cleaning material 50 may be any material, such as ceramic, nylon fiber, polyester fiber, etc., as long as it does not damage the needle tip as much as possible during polishing. The plate 60 may be made of a conductive material, but it is preferable to use gold having a low resistance value. In this embodiment, a gold plate is used. The size and shape of the plate 60 may be any size and shape other than those shown in FIG. In addition, a detachable type, which can be replaced periodically rather than a fixed type, is employed to contact the needle tip a plurality of times.
【0019】クリ−ニング材50とプレ−ト60は図2、図
3及び図4に示すようにX ステ−ジ100 に近接して取り
付けられており、クリ−ニング材50とプレ−ト60は電気
的に絶縁され、プレ−ト60はグランドに接続されてい
る。具体的には、プレ−ト60はキャップ状基部130 の上
面に載置されて止めネジ140 で固定される押さえ枠150
によって押さえられた状態で固定されている。The cleaning material 50 and the plate 60 are mounted close to the X stage 100 as shown in FIGS. 2, 3 and 4, and the cleaning material 50 and the plate 60 are attached. Are electrically insulated, and plate 60 is connected to ground. Specifically, the plate 60 is placed on the upper surface of the cap-shaped base portion 130 and is fixed by the set screw 140.
It is fixed in the state pressed by.
【0020】また、載置台40に取り付けられた保持部材
160(図2) 上に昇降可能なように設置された昇降板170
(図4)があり、昇降板170 上に固定されたばねガイド1
80(図3、4)の外周にはガイド基部190(図3、4)が
上方への抜け出しを防止した状態で設置されている。こ
のガイド基部190 外周面の適宜箇所には図4に示すよう
に系合凹部190aが設けられており、この系合凹部190aに
キャップ状基部130 の側壁に装着されたスプリングプラ
ンジャ−200 のボ−ル200aがスプリング200bに押圧され
ながら着脱可能にスナップ系合されている。A holding member attached to the mounting table 40
160 (FIG. 2) Elevating plate 170 installed so as to be able to move up and down
(FIG. 4) and a spring guide 1 fixed on a lifting plate 170
A guide base 190 (FIGS. 3 and 4) is provided on the outer periphery of 80 (FIGS. 3 and 4) so as to prevent the guide base 190 from coming out upward. As shown in FIG. 4, a system recess 190a is provided at an appropriate position on the outer peripheral surface of the guide base 190, and a bob of the spring plunger 200 mounted on the side wall of the cap-shaped base 130 is provided in the system recess 190a. The screw 200a is detachably snapped while being pressed by the spring 200b.
【0021】この際、キャップ状基部130 とばねガイド
180 との間には常時、前記キャップ状基部130 及び前記
クリ−ニング材50を上方へ押圧する圧縮ばね210 を介在
し、前記キャップ状基部130 の下面と昇降板170 の上面
との間に設けられた隙間 Lにより、前記クリ−ニング材
50を前記プロ−ブ針10及び前記プロ−ブ針固定ブロック
20に押し当てた際の圧力を緩衝し得るようになってお
り、前記クリ−ニング材50と前記プロ−ブ針10との適正
な接触を確保するための誤差を吸収し得るようになって
いる。At this time, the cap base 130 and the spring guide
180, a compression spring 210 for pressing the cap-shaped base 130 and the cleaning material 50 upward is always provided between the lower surface of the cap-shaped base 130 and the upper surface of the elevating plate 170. The cleaning material is
50 is the probe needle 10 and the probe needle fixing block.
The pressure applied to the probe 20 can be buffered, and an error for ensuring proper contact between the cleaning material 50 and the probe needle 10 can be absorbed. I have.
【0022】この時、接触抵抗を測定するための前記プ
レ−ト60と前記プロ−ブ針10のオ−バ−ドライブ量は、
30〜50μm になるように設定する。尚この場合、前記キ
ャップ状基部130 の下面とばねガイド180 の上端面との
間は少なくとも隙間 L以上の間隔を設ける必要がある。
また、昇降板170 の下面に昇降手段であるエア−シリン
ダ230 のプランジャ230aが固定されて前記キャップ状基
部130 及びクリ−ニング材50、プレ−ト60は通常時には
前記載置台40の上面より低い位置に待機している。At this time, the overdrive amount of the plate 60 and the probe needle 10 for measuring the contact resistance is as follows.
Set to 30 to 50 μm. In this case, it is necessary to provide at least a gap L between the lower surface of the cap-shaped base portion 130 and the upper end surface of the spring guide 180.
A plunger 230a of an air-cylinder 230, which is an elevating means, is fixed to the lower surface of the elevating plate 170. Waiting in position.
【0023】前記のように取り付けられるクリ−ニング
材50及びプレ−ト60は載置台40の昇降動作により昇降す
る他に前記エア−シリンダ23の動作によっても昇降可能
である。更に、クリ−ニング材50及びプレ−ト60はキャ
ップ状基部130 をガイド基部190 から取り外すことによ
り交換できる。The cleaning material 50 and the plate 60 attached as described above can be raised and lowered by the operation of the air cylinder 23 in addition to being raised and lowered by the raising and lowering operation of the mounting table 40. Further, the cleaning material 50 and the plate 60 can be replaced by removing the cap-shaped base 130 from the guide base 190.
【0024】次に、本実施形態のプロ−ブ装置において
クリ−ニング材50及びプレ−ト60を使用する場合の動作
を説明する。図2に示すように、半導体ウエハ120 を吸
引保持した載置台40をX 、Y 及びZ方向に移動させるこ
とにより、半導体ウエハ120 の電極パッドにプロ−ブ針
10を接触させて電気的特性が検査されるが、この検査工
程を複数回行うと、プロ−ブ針10にアルミニウム等の異
物が付着し、適正な検査ができなくなる。そこで、検査
工程を複数回、例えば、半導体ウエハ1枚検査毎の複数
回の検査を行った後、載置台40を移動させてプレ−ト60
をプロ−ブ針10の下方対向位置に配置してプレ−ト60と
プロ−ブ針10とを接触させる。Next, the operation when the cleaning material 50 and the plate 60 are used in the probe device of the present embodiment will be described. As shown in FIG. 2, the mounting table 40 holding the semiconductor wafer 120 by suction is moved in the X, Y, and Z directions, so that the probe needle is moved to the electrode pad of the semiconductor wafer 120.
The electrical characteristics are inspected by bringing the probe 10 into contact, but if this inspection step is performed a plurality of times, a foreign substance such as aluminum adheres to the probe needle 10 and an appropriate inspection cannot be performed. Then, after performing the inspection process a plurality of times, for example, a plurality of inspections for each inspection of one semiconductor wafer, the mounting table 40 is moved and the plate 60 is moved.
Is arranged at a position facing the probe needle 10 below and the plate 60 is brought into contact with the probe needle 10.
【0025】この時、前記コントロ−ルユニット250 か
らプロ−ブ針10の各ピンに電圧を印加し、抵抗値を測定
する。この動作を半導体ウエハ1枚検査毎に行い、前記
コントロ−ルユニット250 で設定したプロ−ブ針10の各
ピンの接触抵抗値がスペック外になるまで続ける。この
接触抵抗値がスペック外になった場合、前記載置台40を
移動させてクリ−ニング材50をプロ−ブ針10の下方対向
位置に配置し、その昇降により、プロ−ブ針10のクリ−
ニングによる針先研磨を行う。尚、図5に10本のプロ
−ブ針10とプレ−ト60との接触抵抗値を示してある。測
定した接触抵抗値がスペック外( この場合ピン6番)で
あると針先研磨を行う。At this time, a voltage is applied from the control unit 250 to each pin of the probe needle 10 and the resistance value is measured. This operation is performed for each inspection of one semiconductor wafer, and is continued until the contact resistance value of each pin of the probe needle 10 set by the control unit 250 is out of the specification. When the contact resistance value is out of the specification, the mounting table 40 is moved to dispose the cleaning material 50 at a position opposing the probe needle 10 below, and ascending and descending, the cleaning of the probe needle 10 is performed. −
The tip of the needle is polished. FIG. 5 shows the contact resistance between the ten probe needles 10 and the plate 60. If the measured contact resistance is out of the specification (in this case, pin 6), the tip of the needle is polished.
【0026】クリ−ニング後、前記載置台40を移動し、
プレ−ト60とプロ−ブ針10を接触させて接触抵抗値を測
定する。この接触抵抗値がスペックを満たすまで繰り返
す。複数回繰り返しても接触抵抗値がスペック外である
ならば、プロ−ブカ−ド30の交換( 寿命) となる。前記
の処理を実施後、接触抵抗値がスペック内に戻った場
合、プロ−ブ針10と半導体ウエハ120 の電極パッドに接
触させて電気的特性を検査することができる。After cleaning, the mounting table 40 is moved,
The contact resistance is measured by bringing the plate 60 into contact with the probe 60. This operation is repeated until the contact resistance satisfies the specifications. If the contact resistance value is out of the specification even if it is repeated a plurality of times, the probe card 30 is replaced (lifetime). When the contact resistance returns to the specification after the above-described processing, the electrical characteristics can be inspected by contacting the probe needle 10 and the electrode pad of the semiconductor wafer 120.
【0027】また、前記コントロ−ルユニット250 によ
って、印加電圧( または電流) 、接触抵抗値のスペッ
ク、プレ−ト60とプロ−ブ針10の接触時期( 例えばウエ
ハ1枚、ウエハ10枚毎に測定等) 、クリ−ニング後の
繰り返し回数は無論自由に設定できる。また、接触抵抗
値を測定するプレ−ト60とプロ−ブ針10の接触場所は複
数回測定した後、前記載置台40を若干移動して、プレ−
ト60とプロ−ブ針10の対向面をずらすことができる。The control unit 250 controls the applied voltage (or current), the specification of the contact resistance value, and the timing of contact between the plate 60 and the probe needle 10 (for example, measurement is performed for each wafer and every 10 wafers). Etc.), the number of repetitions after cleaning can be freely set. Also, after the contact location between the plate 60 for measuring the contact resistance value and the probe needle 10 is measured a plurality of times, the mounting table 40 is slightly moved to
The facing surfaces of the probe 60 and the probe needle 10 can be shifted.
【0028】これは、同位置で複数回接触した場合にプ
レ−トが荒れて正確な接触抵抗値を得ることができなく
なることを防止するためである。このずらす距離や回数
等も当然自由に設定できる。同様に、前記クリ−ニング
材50も複数回クリ−ニングした後、クリ−ニング位置を
変えることもできる。これは、前記クリ−ニング材50で
研磨したアルミニウム等の異物が再付着することを防止
するためである。This is to prevent the plate from being roughened so that an accurate contact resistance cannot be obtained when the contact is made a plurality of times at the same position. Of course, the shift distance and the number of times can be freely set. Similarly, after cleaning the cleaning material 50 a plurality of times, the cleaning position can be changed. This is to prevent foreign substances such as aluminum polished by the cleaning material 50 from reattaching.
【0029】前記のような接触抵抗測定工程とクリ−ニ
ング工程を予め記録媒体に記憶させたプログラムに基づ
いて複数回数検査した後、プロ−ブ針の抵抗測定に基づ
いて必要に応じて清掃を行う。そして、指定回数清掃を
しても計測した接触抵抗値が指定したスペック値の範囲
外であれば寿命と判断してプロ−ブ針の交換を実施する
ように設定しているので、プロ−ブ装置のプロ−ブ針10
のメンテナンスを自動的に行うことができると共に、プ
ロ−ブ針の交換時期を正確に判断することができる。After the contact resistance measurement step and the cleaning step are inspected a plurality of times based on a program stored in a recording medium in advance, cleaning is performed as necessary based on the resistance measurement of the probe needle. Do. If the measured contact resistance value is out of the specified range even after the specified number of cleanings, it is determined that the service life has expired and the probe needle is replaced. Equipment probe needle 10
Maintenance can be performed automatically, and the time for replacing the probe needle can be accurately determined.
【0030】[0030]
【発明の効果】以上説明したように、本発明のプロ−ブ
装置は、導電性プレ−トにプロ−ブ針を接触して測定し
た抵抗値に基づいて適切な時期にプロ−ブ針のクリ−ニ
ングを実施するのでクリ−ニング回数を最小限に押さえ
ることができるためプロ−ブカ−ドの寿命を最大限に延
ばすことができると共にプロ−ブカ−ドの寿命を簡単に
判断できる。As described above, the probe device according to the present invention can be used to adjust the probe needle at an appropriate time based on the resistance value measured by contacting the probe needle with the conductive plate. Since the cleaning is performed, the number of times of cleaning can be minimized, so that the life of the probe card can be extended to the maximum and the life of the probe card can be easily determined.
【0031】また、本発明は、クリ−ニング時期をプロ
−ブ針の接触抵抗値により判断しているので、被検査体
の電気的特性を確実にできる。Further, according to the present invention, since the cleaning time is determined based on the contact resistance value of the probe needle, the electrical characteristics of the test object can be ensured.
【図1】本発明の一実施例の測定系ユニットの要部を示
す構成図である。FIG. 1 is a configuration diagram showing a main part of a measurement system unit according to an embodiment of the present invention.
【図2】本発明の一実施例のプロ−ブ装置の要部を示す
構成図である。FIG. 2 is a configuration diagram showing a main part of a probe device according to one embodiment of the present invention.
【図3】本発明の一実施例のプロ−ブ装置のプレ−ト及
びクリ−ニング材の取付け状態の分解斜視図である。FIG. 3 is an exploded perspective view of a probe device according to an embodiment of the present invention in a state where a plate and a cleaning material are attached.
【図4】本発明の一実施例のプロ−ブ装置のプレ−ト及
びクリ−ニング材の取付け状態を示す断面図である。FIG. 4 is a sectional view showing a mounting state of a plate and a cleaning material of the probe device according to one embodiment of the present invention.
【図5】本発明のプロ−ブ装置のプロ−ブ針とプレ−ト
との接触抵抗値による針先研磨の一実施例を示す図であ
る。FIG. 5 is a view showing an embodiment of a needle tip polishing by a contact resistance value between a probe needle and a plate of the probe device of the present invention.
【図6】従来例の測定系ユニットの要部を示す構成図で
ある。FIG. 6 is a configuration diagram showing a main part of a conventional measurement system unit.
10 プロ−ブ針 20 プロ−ブ針固定ブロック 30 プロ−ブカ−ド 40 載置台 50 クリ−ニング材 60 プロ−ブ針接触用プレ−ト 70 Y レ−ル 80 Y ステ−ジ 90 X レ−ル 100 X ステ−ジ 110 チャック 120 半導体ウエハ 130 キャップ状基部 140 止めネジ 150 押さえ枠 160 保持部材 170 昇降板 180 ばねガイド 190 ガイド基部 200 スプリングプランジャ 210 圧縮ばね 230 エア−シリンダ 250 コントロ−ルユニット 10 Probe needle 20 Probe needle fixing block 30 Probe card 40 Mounting table 50 Cleaning material 60 Plate for probe needle contact 70 Y rail 80 Y stage 90 X rail 100 X Stage 110 Chuck 120 Semiconductor wafer 130 Cap-shaped base 140 Set screw 150 Holding frame 160 Holding member 170 Lifting plate 180 Spring guide 190 Guide base 200 Spring plunger 210 Compression spring 230 Air cylinder 250 Control unit
Claims (6)
触させて前記被検査体の電気的特性を検査するプロ−ブ
装置において、 前記被検査体を載置する載置台に近接する位置にコント
ロ−ルユニットを設けるとともに、前記コントロ−ルユ
ニットに前記プロ−ブ針の接触抵抗測定用プレ−トと前
記プロ−ブ針の研磨用クリ−ニング材とを設け、前記プ
ロ−ブ針と前記プレ−トとの接触抵抗値を基に前記プロ
−ブ針のクリ−ニングの可否、及び前記プロ−ブ針の磨
耗の程度を評価して寿命を判断するプログラムを記録し
た記録媒体を前記コントロ−ルユニットが備えているこ
とを特徴とするプロ−ブ装置。1. A probe apparatus for inspecting electrical characteristics of an object to be inspected by bringing a probe needle into contact with an electrode pad of the object to be inspected. A control unit is provided at a position, and a plate for measuring the contact resistance of the probe needle and a cleaning material for polishing the probe needle are provided on the control unit. A recording medium storing a program for evaluating whether the probe needle can be cleaned and the degree of wear of the probe needle based on the contact resistance value with the plate and judging the life of the probe needle is described above. A probe device provided with a control unit.
て、 前記プロ−ブ針の接触抵抗測定用の前記プレ−トは着脱
式で導電性の金プレ−トを用いることを特徴とするプロ
−ブ装置。2. The probe device according to claim 1, wherein said plate for measuring the contact resistance of said probe needle is a detachable and conductive gold plate. Probe device.
て、 予め設定した接触抵抗測定及びクリ−ニング回数に応じ
て、前記被検査体を載置する載置台を移動して、前記プ
ロ−ブ針と、前記プレ−ト及び前記クリ−ニング材との
接触位置を変えて前記測定及びクリ−ニングを実施する
ことを特徴とするプロ−ブ装置。3. The probe device according to claim 1, wherein a mounting table on which the object to be inspected is mounted is moved according to a preset contact resistance measurement and the number of times of cleaning. A probe device for performing the measurement and the cleaning by changing a contact position between the probe and the plate and the cleaning material.
て、 前記記録媒体は、前記プレ−トと前記プロ−ブ針の接触
抵抗を測定する時期、印加電圧、測定した前記接触抵抗
値の評価のためのスペック値、前記プロ−ブ針の寿命判
断のためのクリ−ニングの繰り返し回数、前記プロ−ブ
針と前記プレ−ト及び前記クリ−ニング材との接触位置
の変更距離、及び同じ接触位置での許容回数を設定する
プログラムが記録されていることを特徴とするプロ−ブ
装置。4. The probe device according to claim 1, wherein the recording medium includes a timing for measuring a contact resistance between the plate and the probe needle, an applied voltage, and a measured contact resistance value. A specification value for evaluation, the number of repetitions of cleaning for judging the life of the probe needle, a change distance of a contact position between the probe needle and the plate and the cleaning material, and A probe apparatus characterized in that a program for setting an allowable number of times at the same contact position is recorded.
て、 前記記録媒体は、接触抵抗測定工程とクリ−ニング工程
とを行うようにするプログラムが予め記憶されていて、
指定した回数、前記被検査体の電気的特性を検査した
後、前記プログラムに基づいて前記プロ−ブ針の抵抗測
定と清掃及び寿命判断を行い、前記プロ−ブ針のメンテ
ナンスを自動的に可能にしたことを特徴とするプロ−ブ
装置。5. The probe device according to claim 1, wherein a program for performing a contact resistance measuring step and a cleaning step is stored in the recording medium in advance,
After inspecting the electrical characteristics of the object to be inspected a specified number of times, the resistance of the probe needle, cleaning and life judgment are performed based on the program, and the maintenance of the probe needle can be automatically performed. A probe device characterized in that:
記コントロ−ルユニットにより、プロ−ブ針と接触抵抗
測定用プレ−トとの接触抵抗値を基に、前記プロ−ブ針
のクリ−ニングの可否、及び前記プロ−ブ針の磨耗の程
度を評価して寿命を判断して、前記プロ−ブ針のメンテ
ナンスを自動的に行うことを特徴とするプロ−ブ装置に
よる検査方法。6. An inspection method using a probe device, wherein a control unit is provided in the probe device, and the contact resistance value between the probe needle and a contact resistance measuring plate is provided by the control unit. Automatically performing maintenance of the probe needle by evaluating whether or not the probe needle is to be cleaned and evaluating the degree of wear of the probe needle based on the above. An inspection method using a probe device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9019857A JPH10209231A (en) | 1997-01-17 | 1997-01-17 | Probe device and inspection method using probe device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9019857A JPH10209231A (en) | 1997-01-17 | 1997-01-17 | Probe device and inspection method using probe device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10209231A true JPH10209231A (en) | 1998-08-07 |
Family
ID=12010912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9019857A Pending JPH10209231A (en) | 1997-01-17 | 1997-01-17 | Probe device and inspection method using probe device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10209231A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004070405A1 (en) * | 2003-02-05 | 2004-08-19 | Systems On Silicon Manufacturing Co. Pte. Ltd. | Probe card needle cleaning frequency optimization |
| US6927078B2 (en) | 2002-08-27 | 2005-08-09 | Oki Electric Industry Co., Ltd. | Method of measuring contact resistance of probe and method of testing semiconductor device |
| JP2008051547A (en) * | 2006-08-22 | 2008-03-06 | Hitachi High-Technologies Corp | Prober apparatus equipped with scanning electron microscope and probe cleaning method of prober apparatus |
| WO2009066366A1 (en) * | 2007-11-19 | 2009-05-28 | Advantest Corporation | Probe card and electronic component test apparatus equipped with the same, and method of determing cleaning of probe pin |
| JP2011095266A (en) * | 2010-12-10 | 2011-05-12 | Hitachi High-Technologies Corp | Prober device including scanning electron microscope, and probe cleaning method of the prober device |
| JP2014182005A (en) * | 2013-03-19 | 2014-09-29 | Fuji Electric Co Ltd | Inspection method of semiconductor device, and manufacturing method of semiconductor device using the method |
-
1997
- 1997-01-17 JP JP9019857A patent/JPH10209231A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6927078B2 (en) | 2002-08-27 | 2005-08-09 | Oki Electric Industry Co., Ltd. | Method of measuring contact resistance of probe and method of testing semiconductor device |
| WO2004070405A1 (en) * | 2003-02-05 | 2004-08-19 | Systems On Silicon Manufacturing Co. Pte. Ltd. | Probe card needle cleaning frequency optimization |
| JP2008051547A (en) * | 2006-08-22 | 2008-03-06 | Hitachi High-Technologies Corp | Prober apparatus equipped with scanning electron microscope and probe cleaning method of prober apparatus |
| WO2009066366A1 (en) * | 2007-11-19 | 2009-05-28 | Advantest Corporation | Probe card and electronic component test apparatus equipped with the same, and method of determing cleaning of probe pin |
| JP2011095266A (en) * | 2010-12-10 | 2011-05-12 | Hitachi High-Technologies Corp | Prober device including scanning electron microscope, and probe cleaning method of the prober device |
| JP2014182005A (en) * | 2013-03-19 | 2014-09-29 | Fuji Electric Co Ltd | Inspection method of semiconductor device, and manufacturing method of semiconductor device using the method |
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