JPH10223614A - Etching gas and cleaning gas - Google Patents

Etching gas and cleaning gas

Info

Publication number
JPH10223614A
JPH10223614A JP9027382A JP2738297A JPH10223614A JP H10223614 A JPH10223614 A JP H10223614A JP 9027382 A JP9027382 A JP 9027382A JP 2738297 A JP2738297 A JP 2738297A JP H10223614 A JPH10223614 A JP H10223614A
Authority
JP
Japan
Prior art keywords
gas
etching
film
general formula
integer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9027382A
Other languages
Japanese (ja)
Other versions
JPH10223614A5 (en
Inventor
Mitsushi Itano
充司 板野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Original Assignee
Daikin Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd filed Critical Daikin Industries Ltd
Priority to JP9027382A priority Critical patent/JPH10223614A/en
Priority to PCT/JP1998/000496 priority patent/WO1998036449A1/en
Publication of JPH10223614A publication Critical patent/JPH10223614A/en
Publication of JPH10223614A5 publication Critical patent/JPH10223614A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

Landscapes

  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an etching gads for Si films, SiO2 films, Si3 N4 , or high- melting point metal silicide films having a very small global warming effect by using at least one kind of gas selected out of a group composed of specific fluorine compounds as the etching gas. SOLUTION: At least one kind of gas selected out of a group composed of the fluorine compounds expressed by formulae I, II, and III (where, 1<=n<=5, 1<=y<=5, 0<=m<=15, 0<=y<=15, 0<=l<=11, 0<=z<=11 and 1<=a<=3, with the both m and y and both l and z being not zero simultaneously) is used as an etching gas. Therefore, excellent etching and chamber of cleaning can be performed without using the CF4 , C2 F6 , C4 F8 , and SF6 having extremely high global warning effect as compared with carbon dioxide.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体製造用途に
適したエッチングガスおよびクリーニングガスに関す
る。[0001] 1. Field of the Invention [0002] The present invention relates to an etching gas and a cleaning gas suitable for semiconductor manufacturing applications.

【０００２】[0002]

【従来の技術】ＣＦ4、Ｃ2Ｆ6、Ｃ4Ｆ8（ハ゜ーフルオロシクロフ゛タ
ン）、ＳＦ6などのパーフルオロ化合物は、エッチングガ
ス、プラズマＣＶＤのクリーニングガスとして半導体の
生産工程で大量に使用されている。これらは大気中での
寿命が長い安定な化合物であり、赤外線吸収度が高いた
め、地球温暖化係数が炭酸ガスに比べ、ＣＦ4で６３０
０倍、Ｃ2Ｆ6が１２５００倍、Ｃ4Ｆ8が９１００倍、Ｓ
Ｆ6が２４９００倍と極めて大きく、地球温暖化係数の
低い代替ガスの開発が緊急の課題となっている。 2. Description of the Related Art Perfluoro compounds such as CF 4 , C 2 F 6 , C 4 F 8 (perfluorocyclopentane) and SF 6 are used in a large amount in a semiconductor production process as an etching gas and a cleaning gas for plasma CVD. ing. These are long life stable compounds in the air, because of its high infrared absorbance, global warming potential than carbon dioxide gas, in CF 4 630
0 times, C 2 F 6 12,500 times, C 4 F 8 9100 times, S
F 6 is very large as 24900 times, the development of low alternative gas global warming potential has become an urgent issue.

【０００３】[0003]

【発明が解決しようとする課題】本発明は、半導体の生
産工程で使用されるエッチングガスおよびプラズマＣＶ
Ｄのクリーニングガスとして好適であり、かつ、地球温
暖化作用の小さい代替ガスを提供することを目的とす
る。SUMMARY OF THE INVENTION The present invention relates to an etching gas and a plasma CV used in a semiconductor production process.
An object of the present invention is to provide an alternative gas which is suitable as a cleaning gas for D and has a small global warming effect.

【０００４】[0004]

【課題を解決するための手段】本発明は、以下のエッチ
ングガスおよびクリーニングガスを提供するものであ
る。SUMMARY OF THE INVENTION The present invention provides the following etching gas and cleaning gas.

【０００５】１． 下記一般式（１）、一般式（２）及
び一般式（３）のフッ素系化合物からなる群から選ばれ
る少なくとも１種のガスを含むＳｉ膜、ＳｉＯ2膜、Ｓ
ｉ3Ｎ4膜または高融点金属シリサイト膜用エッチングガ
ス： 一般式（１） ＣnＦmＨlＯＣxＦyＨz （１） 〔式中、ｎ、ｘ、ｍ、ｙ、ｌ、ｚは前記に同じ〕； 一般式（２） ＣaＦ2a+1ＯＣＦ＝ＣＦ2 （２） 〔式中、ａは前記に同じ〕；及び 一般式（３） ＣaＦ2a+1ＣＯＯＣＨ2ＣＦ3 （３） 〔式中、ａは前記に同じ。〕。[0005] 1. Si film containing at least one gas selected from the group consisting of fluorine compounds represented by the following general formulas (1), (2) and (3), a SiO 2 film, S
Etching gas for i 3 N 4 film or refractory metal silicide film: General formula (1) C n F m H l OC x F y H z (1) [where n, x, m, y, l, general formula (2) C a F 2a + 1 OCF = CF 2 (where a is the same as above); and general formula (3) C a F 2a + 1 COOCH 2 CF 3 (3) wherein a is the same as above. ].

【０００６】２． 下記一般式（１）、一般式（２）及
び一般式（３）のフッ素系化合物からなる群から選ばれ
る少なくとも１種のガスを含むチャンバクリーニングガ
ス： 一般式（１） ＣnＦmＨlＯＣxＦyＨz （１） 〔式中、ｎ、ｘ、ｍ、ｙ、ｌ、ｚは前記に同じ〕； 一般式（２） ＣaＦ2a+1ＯＣＦ＝ＣＦ2 （２） 〔式中、ａは１〜３の整数を示す。〕；及び 一般式（３） ＣaＦ2a+1ＣＯＯＣＨ2ＣＦ3 （３） 〔式中、ａは前記に同じ。〕。[0006] 2. Following general formula (1), the general formula (2) and the general formula (3) of the fluorine-based at least one chamber cleaning gas including a gas selected from the group consisting of compounds: Formula (1) C n F m H l OC x F y H z (1) [wherein n, x, m, y, l and z are the same as above]; General formula (2) C a F 2a + 1 OCF = CF 2 (2) [Formula Wherein a represents an integer of 1 to 3. And a general formula (3): C a F 2a + 1 COOCH 2 CF 3 (3) wherein a is the same as defined above. ].

【０００７】さらに本発明は、以下のエッチング方法お
よびクリーニング方法にも関する。Further, the present invention relates to the following etching method and cleaning method.

【０００８】・半導体集積回路製造のためのエッチング
方法において、（ＣＦ3）2Ｃ＝ＣＦＯＣＨ3、ＣＯＦ2、
（ＣＦ3）2（ＣＨ3）Ｃ−ＣＯＦ、（ＣＦ3）2ＣＨ−Ｃ
Ｆ2ＯＣＨ3、ＣＦ3ＣＦＨＣＦＨ2、ＣＦ3ＣＨＦＣＦ3、
ＣＦ3ＣＦＨＣＦ2Ｈ、ＨＣＦ2ＣＦ2ＣＦＨ2、ＣＦ3ＣＨ
＝ＣＦ2、ＣＦ3ＣＦ＝ＣＦＨ、ＣＦ3ＣＨ2ＣＨ2ＣＦ3、
ＣＦ3ＣＨ2ＣＦ2ＣＦ3、ＨＣＦ2ＣＦ2ＣＦ2ＣＦ2Ｈ、Ｃ
Ｆ3ＣＦＨＣＦＨＣＦ2ＣＦ3、ＣＦ3ＣＦ＝ＣＦＣＦ2Ｃ
Ｆ3、Ｃ2Ｆ5Ｉ、（ＣＦ3）2ＣＨＣＦＨＣＦ2ＣＦ3、
（ＣＦ3）2ＣＦＣＦＨＣＦＨＣＦ3、２，２，３，３−
テトラフルオロオキセタン、２，２，３，４，４−ペン
タフルオロオキセタン、１，１，１，３，３−ペンタフ
ルオロプロパン（２４５ｆａ）からなる群から選ばれる
少なくとも１種のガスを用いることを特徴とするＳｉ
膜、ＳｉＯ2膜、Ｓｉ3Ｎ4膜または高融点金属シリサイ
ト膜のエッチング方法。In an etching method for manufacturing a semiconductor integrated circuit, (CF 3 ) 2 C = CFOCH 3 , COF 2 ,
(CF 3) 2 (CH 3 ) C-COF, (CF 3) 2 CH-C
F 2 OCH 3 , CF 3 CFHCFH 2 , CF 3 CHFCF 3 ,
CF 3 CFHCF 2 H, HCF 2 CF 2 CFH 2 , CF 3 CH
= CF 2 , CF 3 CF = CFH, CF 3 CH 2 CH 2 CF 3 ,
CF 3 CH 2 CF 2 CF 3 , HCF 2 CF 2 CF 2 CF 2 H, C
F 3 CFHCFHCF 2 CF 3 , CF 3 CF = CFCF 2 C
F 3 , C 2 F 5 I, (CF 3 ) 2 CHCFHCF 2 CF 3 ,
(CF 3 ) 2 CFCFHCFHCF 3 , 2,2,3,3-
It is characterized by using at least one gas selected from the group consisting of tetrafluorooxetane, 2,2,3,4,4-pentafluorooxetane, and 1,1,1,3,3-pentafluoropropane (245fa). Si
A method for etching a film, a SiO 2 film, a Si 3 N 4 film, or a refractory metal silicide film.

【０００９】・半導体集積回路製造において、チャンバ
クリーニングガスとして（ＣＦ3）2Ｃ＝ＣＦＯＣＨ3、
ＣＯＦ2、（ＣＦ3）2（ＣＨ3）Ｃ−ＣＯＦ、（ＣＦ3）2
ＣＨ−ＣＦ2ＯＣＨ3、ＣＦ3ＣＦＨＣＦＨ2、ＣＦ3ＣＨ
ＦＣＦ3、ＣＦ3ＣＦＨＣＦ2Ｈ、ＨＣＦ2ＣＦ2ＣＦＨ2、
ＣＦ3ＣＨ＝ＣＦ2、ＣＦ3ＣＦ＝ＣＦＨ、ＣＦ3ＣＨ2Ｃ
Ｈ2ＣＦ3、ＣＦ3ＣＨ2ＣＦ2ＣＦ3、ＨＣＦ2ＣＦ2ＣＦ2
ＣＦ2Ｈ、ＣＦ3ＣＦＨＣＦＨＣＦ2ＣＦ3、ＣＦ3ＣＦ＝
ＣＦＣＦ2ＣＦ3、Ｃ2Ｆ5Ｉ、（ＣＦ3）2ＣＨＣＦＨＣＦ
2ＣＦ3、（ＣＦ3）2ＣＦＣＦＨＣＦＨＣＦ3、２，２，
３，３−テトラフルオロオキセタン、２，２，３，４，
４−ペンタフルオロオキセタン、１，１，１，３，３−
ペンタフルオロプロパン（２４５ｆａ）からなる群から
選ばれる少なくとも１種のガスを用いることを特徴とす
るチャンバクリーニング方法。In manufacturing a semiconductor integrated circuit, (CF 3 ) 2 C = CFOCH 3 ,
COF 2 , (CF 3 ) 2 (CH 3 ) C-COF, (CF 3 ) 2
CH-CF 2 OCH 3, CF 3 CFHCFH 2, CF 3 CH
FCF 3 , CF 3 CFHCF 2 H, HCF 2 CF 2 CFH 2 ,
CF 3 CH = CF 2 , CF 3 CF = CFH, CF 3 CH 2 C
H 2 CF 3 , CF 3 CH 2 CF 2 CF 3 , HCF 2 CF 2 CF 2
CF 2 H, CF 3 CFHCFHCF 2 CF 3 , CF 3 CF =
CFCF 2 CF 3 , C 2 F 5 I, (CF 3 ) 2 CHCFHCF
2 CF 3 , (CF 3 ) 2 CFCFHCFHCF 3 , 2,2
3,3-tetrafluorooxetane, 2,2,3,4
4-pentafluorooxetane, 1,1,1,3,3-
A chamber cleaning method using at least one gas selected from the group consisting of pentafluoropropane (245fa).

【００１０】[0010]

【発明の実施の形態】 （１）エッチングガス及びエッチング方法 エッチングに用いられるガスとしては、上記一般式
（１）、一般式（２）及び一般式（３）で表されるフッ
素系化合物からなる群から選ばれる少なくとも１種のガ
スを用いることができる。BEST MODE FOR CARRYING OUT THE INVENTION (1) Etching gas and etching method A gas used for etching is a fluorine-based compound represented by the above general formula (1), general formula (2) or general formula (3). At least one gas selected from the group can be used.

【００１１】上記一般式（１）で表されるフッ素系化合
物のうち好ましい化合物として、ＨＣＦ2ＯＣＦ2Ｃ
Ｆ3、ＣＦ3ＯＣＦ2ＣＦ2Ｈ、ＨＣＦ2ＯＣＦ2ＣＦ2Ｈ、
ＣＦ3ＣＦ2ＯＣＦＨＣＦ3、ＣＦ3ＣＦ2ＯＣＦ2ＣＦ
2Ｈ、ＣＦ3ＣＦＨＣＦ2ＯＣＨ3、ＣＦ3ＣＦ2ＣＦ2ＯＣ
ＦＨＣＦ3等のガスがいずれも用いられ、これらは１種
又は２種を組み合わせて用いることができる。Among the fluorine compounds represented by the above general formula (1), HCF 2 OCF 2 C
F 3 , CF 3 OCF 2 CF 2 H, HCF 2 OCF 2 CF 2 H,
CF 3 CF 2 OCFHCF 3 , CF 3 CF 2 OCF 2 CF
2 H, CF 3 CFHCF 2 OCH 3 , CF 3 CF 2 CF 2 OC
Any gas such as FHCF 3 is used, and these can be used alone or in combination of two or more.

【００１２】上記一般式（２）で表されるフッ素系化合
物のうち好ましい化合物として、ＣＦ3ＯＣＦ＝ＣＦ2、
ＣＦ3ＣＦ2ＯＣＦ＝ＣＦ2、ＣＦ3ＣＦ2ＣＦ2ＯＣＦ＝Ｃ
Ｆ2等のガスがいずれも用いられ、これらは１種又は２
種を組み合わせて用いることができる。Among the fluorine compounds represented by the general formula (2), preferable compounds are CF 3 OCF = CF 2 ,
CF 3 CF 2 OCF = CF 2 , CF 3 CF 2 CF 2 OCF = C
Any gas such as F 2 is used, and these are one kind or two kinds.
Species can be used in combination.

【００１３】上記一般式（３）で表されるフッ素系化合
物のうち好ましい化合物として、ＣＦ3ＣＯＯＣＨ2ＣＦ
3、ＣＦ3ＣＦ2ＣＯＯＣＨ2ＣＦ3、ＣＦ3ＣＦ2ＣＦ2ＣＯ
ＯＣＨ2ＣＦ3などのガスがいずれも用いられ、これらは
１種又は２種を組み合わせて用いることができる。A preferred compound among the fluorine compounds represented by the above general formula (3) is CF 3 COOCH 2 CF
3 , CF 3 CF 2 COOCH 2 CF 3 , CF 3 CF 2 CF 2 CO
Any gas such as OCH 2 CF 3 is used, and these can be used alone or in combination of two or more.

【００１４】具体的なエッチングガスとしては、（ＣＦ
3）2Ｃ＝ＣＦＯＣＨ3、ＣＯＦ2、（ＣＦ3）2（ＣＨ3）
Ｃ−ＣＯＦ、（ＣＦ3）2ＣＨ−ＣＦ2ＯＣＨ3、ＣＦ3Ｃ
ＦＨＣＦＨ2、ＣＦ3ＣＨＦＣＦ3、ＣＦ3ＣＦＨＣＦ
2Ｈ、ＨＣＦ2ＣＦ2ＣＦＨ2、ＣＦ3ＣＨ＝ＣＦ2、ＣＦ3
ＣＦ＝ＣＦＨ、ＣＦ3ＣＨ2ＣＨ2ＣＦ3、ＣＦ3ＣＨ2ＣＦ
2ＣＦ3、ＨＣＦ2ＣＦ2ＣＦ2ＣＦ2Ｈ、ＣＦ3ＣＦＨＣＦ
ＨＣＦ2ＣＦ3、ＣＦ3ＣＦ＝ＣＦＣＦ2ＣＦ3、Ｃ2Ｆ
5Ｉ、（ＣＦ3）2ＣＨＣＦＨＣＦ2ＣＦ3、（ＣＦ3）2Ｃ
ＦＣＦＨＣＦＨＣＦ3、２，２，３，３−テトラフルオ
ロオキセタン、２，２，３，４，４−ペンタフルオロオ
キセタン、１，１，１，３，３−ペンタフルオロプロパ
ン（２４５ｆａ）からなる群から選ばれる少なくとも１
種のガスが挙げられる。As a specific etching gas, (CF
3 ) 2 C = CFOCH 3 , COF 2 , (CF 3 ) 2 (CH 3 )
C-COF, (CF 3) 2 CH-CF 2 OCH 3, CF 3 C
FHCFH 2 , CF 3 CHFCF 3 , CF 3 CFHCF
2 H, HCF 2 CF 2 CFH 2 , CF 3 CH = CF 2 , CF 3
CF = CFH, CF 3 CH 2 CH 2 CF 3 , CF 3 CH 2 CF
2 CF 3 , HCF 2 CF 2 CF 2 CF 2 H, CF 3 CFHCF
HCF 2 CF 3 , CF 3 CF = CFCF 2 CF 3 , C 2 F
5 I, (CF 3 ) 2 CHCFHCF 2 CF 3 , (CF 3 ) 2 C
Selected from the group consisting of FCFHCFHCF 3 , 2,2,3,3-tetrafluorooxetane, 2,2,3,4,4-pentafluorooxetane, 1,1,1,3,3-pentafluoropropane (245fa) At least one
Seed gases.

【００１５】本発明のエッチングガスには、Ｈｅ，Ｎ
ｅ，Ａｒ，Ｈ2，Ｎ2，Ｏ2などの単体ガス、ＣＨ4，Ｃ2
Ｈ6，ＮＨ3などの化合物ガスを適切な割合で混合して用
いてもよい。The etching gas of the present invention includes He, N
e, a single gas such as Ar, H 2 , N 2 , O 2 , CH 4 , C 2
Compound gases such as H 6 and NH 3 may be mixed and used at an appropriate ratio.

【００１６】本発明のエッチング方法は、プラズマエッ
チング、反応性イオンエッチング、マイクロ波エッチン
グなどの各種のドライエッチング条件下で行われる。本
発明のエッチング方法で加工される基板上の被加工膜と
しては、Ｓｉ膜、ＳｉＯ2膜、Ｓｉ3Ｎ4膜または高融点
金属シリサイト膜が挙げられる。The etching method of the present invention is performed under various dry etching conditions such as plasma etching, reactive ion etching, and microwave etching. Examples of the film to be processed on the substrate processed by the etching method of the present invention include a Si film, a SiO 2 film, a Si 3 N 4 film, and a refractory metal silicide film.

【００１７】本発明のエッチングガスは、高精度かつ高
選択性であり、従来エッチングガスとして汎用されてい
たＣＦ4、Ｃ2Ｆ6、Ｃ4Ｆ8、ＳＦ6の代替品として実用的
なレベルに達している。また、本発明のエッチングガス
はＣＦ4、Ｃ2Ｆ6、Ｃ4Ｆ8、ＳＦ6に比較して地球温暖化
係数が十分低い。The etching gas of the present invention has high precision and high selectivity, and is a practical level as a substitute for CF 4 , C 2 F 6 , C 4 F 8 and SF 6 which have been widely used as etching gas in the past. Has been reached. Further, the etching gas of the present invention has a sufficiently lower global warming potential than CF 4 , C 2 F 6 , C 4 F 8 and SF 6 .

【００１８】具体的には、例えば本発明の２，２，３，
３−テトラフルオロオキセタンを公知の反応性イオンエ
ッチングの条件下（例えば、圧力＝５０ｍＴｏｒｒ、入
力高周波電力＝２００Ｗ、ガス流量＝２５ｃｃ／ｍｉ
ｎ）にＳｉ膜、ＳｉＯ2膜、Ｓｉ3Ｎ4膜または高融点金
属シリサイト膜に使用すると、パターンの寸法精度が高
く、かつ、被加工層に対する選択性も高い。Specifically, for example, 2,2,3 of the present invention
The 3-tetrafluorooxetane is subjected to known reactive ion etching conditions (for example, pressure = 50 mTorr, input high frequency power = 200 W, gas flow rate = 25 cc / mi).
If n) is used for a Si film, a SiO 2 film, a Si 3 N 4 film or a high melting point metal silicide film, the dimensional accuracy of the pattern is high and the selectivity to the layer to be processed is high.

【００１９】２，２，３，３−テトラフルオロオキセタ
ンに代えて１，１，１，３，３−ペンタフルオロプロパ
ン（２４５ｆａ）を使用しても、同様にパターンの寸法
精度が高く、かつ、被加工層に対する選択性も高いた
め、実用上の支障なく使用することができる。When 1,1,1,3,3-pentafluoropropane (245fa) is used instead of 2,2,3,3-tetrafluorooxetane, the dimensional accuracy of the pattern is similarly high, and Since the selectivity to the layer to be processed is high, it can be used without practical problems.

【００２０】さらに、２，２，３，３−テトラフルオロ
オキセタンに代えて、エッチングガスとして上記に例示
された一般式（１）〜（３）のガス、或いは上記に具体
的に例示されたエッチングガスのいずれを使用しても、
同様にパターンの寸法精度が高く、かつ、被加工層に対
する選択性も高いため、実用上の支障なく使用すること
ができる。Further, in place of 2,2,3,3-tetrafluorooxetane, a gas of the general formulas (1) to (3) exemplified above as an etching gas, or an etching gas specifically exemplified above Whichever gas you use,
Similarly, since the dimensional accuracy of the pattern is high and the selectivity to the layer to be processed is high, it can be used without any practical problems.

【００２１】（２）チャンバクリーニングガス及びチャ
ンバクリーニング方法 チャンバクリーニングに用いられるガスとしては、上記
一般式（１）、一般式（２）及び一般式（３）で表され
るフッ素系化合物からなる群から選ばれる少なくとも１
種のガスを用いることができる。(2) Chamber Cleaning Gas and Chamber Cleaning Method As the gas used for chamber cleaning, a group consisting of the fluorine compounds represented by the above general formulas (1), (2) and (3) is used. At least one selected from
Seed gases can be used.

【００２２】上記一般式（１）で表されるフッ素系化合
物のうち好ましい化合物として、ＨＣＦ2ＯＣＦ2Ｃ
Ｆ3、ＣＦ3ＯＣＦ2ＣＦ2Ｈ、ＨＣＦ2ＯＣＦ2ＣＦ2Ｈ、
ＣＦ3ＣＦ2ＯＣＦＨＣＦ3、ＣＦ3ＣＦ2ＯＣＦ2ＣＦ
2Ｈ、ＣＦ3ＣＦＨＣＦ2ＯＣＨ3、ＣＦ3ＣＦ2ＣＦ2ＯＣ
ＦＨＣＦ3等のガスがいずれも用いられ、これらは１種
又は２種を組み合わせて用いることができる。Preferred among the fluorine compounds represented by the above general formula (1) are HCF 2 OCF 2 C
F 3 , CF 3 OCF 2 CF 2 H, HCF 2 OCF 2 CF 2 H,
CF 3 CF 2 OCFHCF 3 , CF 3 CF 2 OCF 2 CF
2 H, CF 3 CFHCF 2 OCH 3 , CF 3 CF 2 CF 2 OC
Any gas such as FHCF 3 is used, and these can be used alone or in combination of two or more.

【００２３】上記一般式（２）で表されるフッ素系化合
物のうち好ましい化合物として、ＣＦ3ＯＣＦ＝ＣＦ2、
ＣＦ3ＣＦ2ＯＣＦ＝ＣＦ2、ＣＦ3ＣＦ2ＣＦ2ＯＣＦ＝Ｃ
Ｆ２等のガスがいずれも用いられ、これらは１種又は２
種を組み合わせて用いることができる。Among the fluorine-based compounds represented by the general formula (2), preferred are CF 3 OCF = CF 2 ,
CF 3 CF 2 OCF = CF 2 , CF 3 CF 2 CF 2 OCF = C
Gas F 2, etc. are all used, they may comprise one or two
Species can be used in combination.

【００２４】上記一般式（３）で表されるフッ素系化合
物のうち好ましい化合物として、ＣＦ３ＣＯＯＣＨ2Ｃ
Ｆ3、ＣＦ3ＣＦ2ＣＯＯＣＨ2ＣＦ3、ＣＦ3ＣＦ2ＣＦ2Ｃ
ＯＯＣＨ2ＣＦ3などのガスがいずれも用いられ、これら
は１種又は２種を組み合わせて用いることができる。A preferred compound among the fluorine compounds represented by the above general formula (3) is CF 3 COOCH 2 C
F 3 , CF 3 CF 2 COOCH 2 CF 3 , CF 3 CF 2 CF 2 C
Any gas such as OOCH 2 CF 3 is used, and these can be used alone or in combination of two or more.

【００２５】具体的なチャンバクリーニングガスとして
は、（ＣＦ3）2Ｃ＝ＣＦＯＣＨ3、ＣＯＦ2、（ＣＦ3）2
（ＣＨ3）Ｃ−ＣＯＦ、（ＣＦ3）2ＣＨ−ＣＦ2ＯＣ
Ｈ3、ＣＦ3ＣＦＨＣＦＨ2、ＣＦ3ＣＨＦＣＦ3、ＣＦ3Ｃ
ＦＨＣＦ2Ｈ、ＨＣＦ2ＣＦ2ＣＦＨ2、ＣＦ3ＣＨ＝Ｃ
Ｆ2、ＣＦ3ＣＦ＝ＣＦＨ、ＣＦ3ＣＨ2ＣＨ2ＣＦ3、ＣＦ
3ＣＨ2ＣＦ2ＣＦ3、ＨＣＦ2ＣＦ2ＣＦ2ＣＦ2Ｈ、ＣＦ3
ＣＦＨＣＦＨＣＦ2ＣＦ3、ＣＦ3ＣＦ＝ＣＦＣＦ2Ｃ
Ｆ3、Ｃ2Ｆ5Ｉ、（ＣＦ3）2ＣＨＣＦＨＣＦ2ＣＦ3、
（ＣＦ3）2ＣＦＣＦＨＣＦＨＣＦ3、２，２，３，３−
テトラフルオロオキセタン、２，２，３，４，４−ペン
タフルオロオキセタン、１，１，１，３，３−ペンタフ
ルオロプロパン（２４５ｆａ）からなる群から選ばれる
少なくとも１種のガスが挙げられる。Specific examples of the chamber cleaning gas include (CF 3 ) 2 C = CFOCH 3 , COF 2 , and (CF 3 ) 2
(CH 3) C-COF, (CF 3) 2 CH-CF 2 OC
H 3 , CF 3 CFHCFH 2 , CF 3 CHFCF 3 , CF 3 C
FHCF 2 H, HCF 2 CF 2 CFH 2 , CF 3 CH = C
F 2 , CF 3 CF = CFH, CF 3 CH 2 CH 2 CF 3 , CF
3 CH 2 CF 2 CF 3 , HCF 2 CF 2 CF 2 CF 2 H, CF 3
CFHCFHCF 2 CF 3 , CF 3 CF = CFCF 2 C
F 3 , C 2 F 5 I, (CF 3 ) 2 CHCFHCF 2 CF 3 ,
(CF 3 ) 2 CFCFHCFHCF 3 , 2,2,3,3-
At least one gas selected from the group consisting of tetrafluorooxetane, 2,2,3,4,4-pentafluorooxetane, and 1,1,1,3,3-pentafluoropropane (245fa) is exemplified.

【００２６】本発明のチャンバクリーニングガスは、Ｈ
ｅ，Ｎｅ，Ａｒ，Ｈ2，Ｎ2，Ｏ2などの単体ガスと併用
してもよい。The chamber cleaning gas of the present invention is H
It may be used in combination with a simple gas such as e, Ne, Ar, H 2 , N 2 , and O 2 .

【００２７】チャンバの素材としては、ステンレス、Ａ
ｌ合金等の公知の材料が挙げられる。本発明のチャンバ
クリーニングガスは、チャンバに用いられるこれら材料
にダメージを与えることなく、チャンバに付着した反応
副生成物を迅速に除去することができる。The material of the chamber is stainless steel, A
Well-known materials such as 1 alloys can be used. The chamber cleaning gas of the present invention can quickly remove reaction by-products attached to the chamber without damaging these materials used in the chamber.

【００２８】従って、本発明のチャンバクリーニングガ
スは、従来チャンバクリーニングガスとして用いられて
いるＣＦ4、Ｃ2Ｆ6、ＳＦ6の代替品として十分実用的に
使用できるレベルにある。しかも、本発明のチャンバク
リーニングガスは、ＣＦ4、Ｃ2Ｆ6、ＳＦ6に比較して地
球温暖化係数が十分低い。Therefore, the chamber cleaning gas of the present invention is at a level that can be used sufficiently as a substitute for CF 4 , C 2 F 6 and SF 6 conventionally used as a chamber cleaning gas. Moreover, the chamber cleaning gas of the present invention has a sufficiently lower global warming potential than CF 4 , C 2 F 6 , and SF 6 .

【００２９】具体的には、例えば本発明の２，２，３，
３−テトラフルオロオキセタンを公知のチャンバクリー
ニングの条件下（圧力＝１００ｍＴｏｒｒ；入力高周波
電力＝３００Ｗ；ガス流量＝５０ｃｃ／ｍｉｎ）に３０
分間使用すると、チャンバに付着した反応副生成物を十
分かつ迅速に取り除くことができ、かつ、チャンバにダ
メージを与えることはなく、十分実用的に使用できる。Specifically, for example, 2,2,3 of the present invention
Under a known chamber cleaning condition (pressure = 100 mTorr; input high frequency power = 300 W; gas flow rate = 50 cc / min), 3-tetrafluorooxetane was subjected to 30 cleaning.
When used for a minute, the reaction by-product adhering to the chamber can be sufficiently and quickly removed, and the chamber is practically used without damaging the chamber.

【００３０】２，２，３，３−テトラフルオロオキセタ
ンに代えて１，１，１，３，３−ペンタフルオロプロパ
ン（２４５ｆａ）を使用しても、同様にチャンバに付着
した反応副生成物を十分かつ迅速に取り除くことがで
き、かつ、チャンバにダメージを与えることはなく、実
用上の支障なく使用することができる。When 1,1,1,3,3-pentafluoropropane (245fa) is used in place of 2,2,3,3-tetrafluorooxetane, the reaction by-products adhered to the chamber are similarly reduced. It can be removed sufficiently and quickly, does not damage the chamber, and can be used without practical problems.

【００３１】さらに、２，２，３，３−テトラフルオロ
オキセタンに代えてチャンバクリーニングガスとして上
記に例示された一般式（１）〜（３）のガス、或いは上
記に具体的に例示されたチャンバクリーニングガスのい
ずれを使用しても、同様にチャンバに付着した反応副生
成物を十分かつ迅速に取り除くことができ、かつ、チャ
ンバにダメージを与えることはなく、実用上の支障なく
使用することができる。Further, the gas of the general formulas (1) to (3) exemplified above as the chamber cleaning gas in place of 2,2,3,3-tetrafluorooxetane, or the chamber specifically exemplified above Regardless of which cleaning gas is used, similarly, reaction by-products adhering to the chamber can be sufficiently and rapidly removed, and there is no damage to the chamber, so that it can be used without practical problems. it can.

【００３２】[0032]

【発明の効果】本発明によれば、地球温暖化係数が炭酸
ガスに比べ極めて高いＣＦ4、Ｃ2Ｆ6、Ｃ4Ｆ8、ＳＦ6を
用いることなく、良好なエッチング及びチャンバクリー
ニングを行うことができる。According to the present invention, good etching and chamber cleaning can be performed without using CF 4 , C 2 F 6 , C 4 F 8 , and SF 6 whose global warming potential is much higher than that of carbon dioxide. be able to.

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】下記一般式（１）、一般式（２）及び一般
式（３）のフッ素系化合物からなる群から選ばれる少な
くとも１種のガスを含むＳｉ膜、ＳｉＯ2膜、Ｓｉ3Ｎ4
膜または高融点金属シリサイト膜用エッチングガス： 一般式（１） ＣnＦmＨlＯＣxＦyＨz （１） 〔式中、ｎ、ｘはいずれも１〜５の整数を示し；ｍ、ｙ
はいずれも０〜１１の整数を示し（但し、ｍとｙが同時
に０であることはない）；及びｌ、ｚはいずれも０〜１
１の整数を示す（但し、ｌとｚが同時に０であることは
ない）〕； 一般式（２） ＣaＦ2a+1ＯＣＦ＝ＣＦ2 （２） 〔式中、ａは１〜３の整数を示す。〕；及び 一般式（３） ＣaＦ2a+1ＣＯＯＣＨ2ＣＦ3 （３） 〔式中、ａは前記に同じ。〕。An Si film, at least one gas selected from the group consisting of fluorine compounds represented by the following general formulas (1), (2) and (3), a SiO 2 film, and a Si 3 N gas. Four
Film or a refractory metal silicide film as an etching gas: Formula (1) C n F m H l OC x F y H z (1) wherein, n, x are both an integer of 1 to 5; m, y
Each represents an integer of 0 to 11 (provided that m and y are not 0 at the same time);
An integer of 1 (provided that 1 and z are not simultaneously 0)]; General formula (2): C a F 2a + 1 OCF = CF 2 (2) Indicates an integer. And a general formula (3): C a F 2a + 1 COOCH 2 CF 3 (3) wherein a is the same as defined above. ]. 【請求項２】（ＣＦ3）2Ｃ＝ＣＦＯＣＨ3、ＣＯＦ2、
（ＣＦ3）2（ＣＨ3）Ｃ−ＣＯＦ、（ＣＦ3）2ＣＨ−Ｃ
Ｆ2ＯＣＨ3、ＣＦ3ＣＦＨＣＦＨ2、ＣＦ3ＣＨＦＣＦ3、
ＣＦ3ＣＦＨＣＦ2Ｈ、ＨＣＦ2ＣＦ2ＣＦＨ2、ＣＦ3ＣＨ
＝ＣＦ2、ＣＦ3ＣＦ＝ＣＦＨ、ＣＦ3ＣＨ2ＣＨ2ＣＦ3、
ＣＦ3ＣＨ2ＣＦ2ＣＦ3、ＨＣＦ2ＣＦ2ＣＦ2ＣＦ2Ｈ、Ｃ
Ｆ3ＣＦＨＣＦＨＣＦ2ＣＦ3、ＣＦ3ＣＦ＝ＣＦＣＦ2Ｃ
Ｆ3、Ｃ2Ｆ5Ｉ、（ＣＦ3）2ＣＨＣＦＨＣＦ2ＣＦ3、
（ＣＦ3）2ＣＦＣＦＨＣＦＨＣＦ3、２，２，３，３−
テトラフルオロオキセタン、２，２，３，４，４−ペン
タフルオロオキセタン、１，１，１，３，３−ペンタフ
ルオロプロパン（２４５ｆａ）からなる群から選ばれる
少なくとも１種のガスを含むＳｉ膜、ＳｉＯ2膜、Ｓｉ3
Ｎ4膜または高融点金属シリサイト膜用のエッチングガ
ス。2. (CF 3 ) 2 C = CFOCH 3 , COF 2 ,
(CF 3) 2 (CH 3 ) C-COF, (CF 3) 2 CH-C
F 2 OCH 3 , CF 3 CFHCFH 2 , CF 3 CHFCF 3 ,
CF 3 CFHCF 2 H, HCF 2 CF 2 CFH 2 , CF 3 CH
= CF 2 , CF 3 CF = CFH, CF 3 CH 2 CH 2 CF 3 ,
CF 3 CH 2 CF 2 CF 3 , HCF 2 CF 2 CF 2 CF 2 H, C
F 3 CFHCFHCF 2 CF 3 , CF 3 CF = CFCF 2 C
F 3 , C 2 F 5 I, (CF 3 ) 2 CHCFHCF 2 CF 3 ,
(CF 3 ) 2 CFCFHCFHCF 3 , 2,2,3,3-
A Si film containing at least one gas selected from the group consisting of tetrafluorooxetane, 2,2,3,4,4-pentafluorooxetane, and 1,1,1,3,3-pentafluoropropane (245fa); SiO 2 film, Si 3
Etching gas for N 4 film or refractory metal silicide film. 【請求項３】下記一般式（１）、一般式（２）及び一般
式（３）のフッ素系化合物からなる群から選ばれる少な
くとも１種のガスを含むチャンバクリーニングガス： 一般式（１） ＣnＦmＨlＯＣxＦyＨz （１） 〔式中、ｎ、ｘはいずれも１〜５の整数を示し；ｍ、ｙ
はいずれも０〜１１の整数を示し（但し、ｍとｙが同時
に０であることはない）；及びｌ、ｚはいずれも０〜１
１の整数を示す（但し、ｌとｚが同時に０であることは
ない）〕； 一般式（２） ＣaＦ2a+1ＯＣＦ＝ＣＦ2 （２） 〔式中、ａは１〜３の整数を示す。〕；及び 一般式（３） ＣaＦ2a+1ＣＯＯＣＨ2ＣＦ3 （３） 〔式中、ａは前記に同じ。〕。3. A chamber cleaning gas containing at least one gas selected from the group consisting of fluorine compounds represented by the following general formulas (1), (2) and (3): general formula (1) C n F m H l OC x F y H z (1) wherein, n, x are both an integer of 1 to 5; m, y
Each represents an integer of 0 to 11 (provided that m and y are not 0 at the same time);
An integer of 1 (provided that 1 and z are not simultaneously 0)]; General formula (2): C a F 2a + 1 OCF = CF 2 (2) Indicates an integer. And a general formula (3): C a F 2a + 1 COOCH 2 CF 3 (3) wherein a is the same as defined above. ]. 【請求項４】（ＣＦ3）2Ｃ＝ＣＦＯＣＨ3、ＣＯＦ2、
（ＣＦ3）2（ＣＨ3）Ｃ−ＣＯＦ、（ＣＦ3）2ＣＨ−Ｃ
Ｆ2ＯＣＨ3、ＣＦ3ＣＦＨＣＦＨ2、ＣＦ3ＣＨＦＣＦ3、
ＣＦ3ＣＦＨＣＦ2Ｈ、ＨＣＦ2ＣＦ2ＣＦＨ2、ＣＦ3ＣＨ
＝ＣＦ2、ＣＦ3ＣＦ＝ＣＦＨ、ＣＦ3ＣＨ2ＣＨ2ＣＦ3、
ＣＦ3ＣＨ2ＣＦ2ＣＦ3、ＨＣＦ2ＣＦ2ＣＦ2ＣＦ2Ｈ、Ｃ
Ｆ3ＣＦＨＣＦＨＣＦ2ＣＦ3、ＣＦ3ＣＦ＝ＣＦＣＦ2Ｃ
Ｆ3、Ｃ2Ｆ5Ｉ、（ＣＦ3）2ＣＨＣＦＨＣＦ2ＣＦ3、
（ＣＦ3）2ＣＦＣＦＨＣＦＨＣＦ3、２，２，３，３−
テトラフルオロオキセタン、２，２，３，４，４−ペン
タフルオロオキセタン、１，１，１，３，３−ペンタフ
ルオロプロパン（２４５ｆａ）からなる群から選ばれる
少なくとも１種のガスを含むチャンバクリーニングガ
ス。4. (CF 3 ) 2 C = CFOCH 3 , COF 2 ,
(CF 3) 2 (CH 3 ) C-COF, (CF 3) 2 CH-C
F 2 OCH 3 , CF 3 CFHCFH 2 , CF 3 CHFCF 3 ,
CF 3 CFHCF 2 H, HCF 2 CF 2 CFH 2 , CF 3 CH
= CF 2 , CF 3 CF = CFH, CF 3 CH 2 CH 2 CF 3 ,
CF 3 CH 2 CF 2 CF 3 , HCF 2 CF 2 CF 2 CF 2 H, C
F 3 CFHCFHCF 2 CF 3 , CF 3 CF = CFCF 2 C
F 3 , C 2 F 5 I, (CF 3 ) 2 CHCFHCF 2 CF 3 ,
(CF 3 ) 2 CFCFHCFHCF 3 , 2,2,3,3-
A chamber cleaning gas containing at least one gas selected from the group consisting of tetrafluorooxetane, 2,2,3,4,4-pentafluorooxetane, and 1,1,1,3,3-pentafluoropropane (245fa) .
JP9027382A 1997-02-12 1997-02-12 Etching gas and cleaning gas Pending JPH10223614A (en)

Priority Applications (2)

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PCT/JP1998/000496 WO1998036449A1 (en) 1997-02-12 1998-02-05 Etching gas and cleaning gas

Applications Claiming Priority (1)

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JPH10223614A5 JPH10223614A5 (en) 2005-04-21

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