JPH10237409A - Conductive resin paste and semiconductor device manufactured using the same - Google Patents
Conductive resin paste and semiconductor device manufactured using the sameInfo
- Publication number
- JPH10237409A JPH10237409A JP9039507A JP3950797A JPH10237409A JP H10237409 A JPH10237409 A JP H10237409A JP 9039507 A JP9039507 A JP 9039507A JP 3950797 A JP3950797 A JP 3950797A JP H10237409 A JPH10237409 A JP H10237409A
- Authority
- JP
- Japan
- Prior art keywords
- silver powder
- conductive resin
- powder
- resin paste
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
Landscapes
- Adhesives Or Adhesive Processes (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
- Die Bonding (AREA)
Abstract
(57)【要約】
【課題】 導電性に優れ、更に熱放散性にも優れる導電
性樹脂ペーストを提供する。
【解決手段】 球状ニッケル粉、エポキシ樹脂、銀粉、
を必須成分として、該成分中に球状ニッケル粉が10〜
90重量%、銀粉が5〜85重量%、なおかつ球状ニッ
ケル粉と銀粉を合わせて80〜95重量%含まれている
ことを特徴とする半導体素子接着用樹脂ペースト。(57) [Problem] To provide a conductive resin paste having excellent conductivity and excellent heat dissipation. SOLUTION: Spherical nickel powder, epoxy resin, silver powder,
As an essential component, in which spherical nickel powder is 10 to
A resin paste for bonding a semiconductor element, comprising 90% by weight, 5 to 85% by weight of silver powder, and 80 to 95% by weight of spherical nickel powder and silver powder in total.
Description
【0001】[0001]
【発明の属する技術分野】本発明はIC,LSI等の半
導体素子を金属フレーム等の基板に接着させる半導体素
子接着用樹脂ペーストに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin paste for bonding a semiconductor element such as an IC or an LSI to a substrate such as a metal frame.
【0002】[0002]
【従来の技術】半導体装置の組立において、半導体素子
を金属フレームに接着させる工程、いわゆるダイボンデ
ィング工程において用いられる接合方式は、これまで金
−シリコン共晶に始まり、半田、樹脂ペーストと推移し
てきた。現在では主にIC,LSIの組立においては導
電性樹脂ペーストを、トランジスタ、ダイオードなどの
ディスクリートにおいては通常半田を使用している。2. Description of the Related Art In the process of assembling a semiconductor device, a bonding method used in a process of bonding a semiconductor element to a metal frame, that is, a so-called die bonding process has been changed from a gold-silicon eutectic to a solder and a resin paste. . At present, conductive resin paste is mainly used for assembling ICs and LSIs, and usually solder is used for discretes such as transistors and diodes.
【0003】IC、LSI等の半導体装置においてはそ
の半導体素子の面積が大きいことから半田に対してより
低応力性が高い樹脂ペーストを使用する方法が行われて
いる。この樹脂ペーストはエポキシ樹脂中にフレーク状
の銀粉が分散されている。しかし導電性樹脂ペーストを
用いる方法では近年の半導体装置において半導体素子と
金属フレームの間の導電性に関する要求は低くなってき
ている。なぜならば近年の半導体装置では半導体素子や
半導体装置のデザインの進歩に伴い、アースを取るため
に半導体素子の裏面から金属フレームに電気を流す構造
が必ずしも必要とされていない。また導電性樹脂ペース
トを通して電気を流すにしてもIC,LSIでは電流が
2〜3mA程度の微弱な電流である。この程度の電流で
は樹脂中に金属粉が分散している従来の導電性樹脂ペー
ストでも充分に対応が可能である。[0003] In semiconductor devices such as ICs and LSIs, a method of using a resin paste having a lower stress property to solder has been used because the area of the semiconductor element is large. In this resin paste, flake silver powder is dispersed in an epoxy resin. However, in a method using a conductive resin paste, a requirement for conductivity between a semiconductor element and a metal frame in a semiconductor device in recent years has been reduced. This is because a recent semiconductor device does not necessarily require a structure for flowing electricity from the back surface of the semiconductor device to the metal frame in order to ground the semiconductor device along with the progress of the design of the semiconductor device. Even if electricity is passed through the conductive resin paste, the current is a very small current of about 2 to 3 mA in ICs and LSIs. With such a current, a conventional conductive resin paste in which metal powder is dispersed in a resin can sufficiently cope.
【0004】導電性樹脂ペースト対し半田は導電性や接
着性に優れ、価格も安価である。この半田を主に使用し
ているダイオード、トランジスタ等のディスクリートで
はその製品の構造上半導体素子と金属フレームの間で電
気を流す必要がある。ところが近年の環境問題から半田
に使用している鉛を使わない方向に各半導体メーカーが
動いており、更に半田を使用する際には必要なフラック
スの洗浄工程が減らすことによるコスト削減の意味から
IC,LSIに使用している導電性樹脂ペーストをディ
スクリート用に開発しているが、半導体装置に流れる電
流が2〜3A程度の大電流が流れる製品もあり、従来の
導電性樹脂ペーストでは満足する導電性を得ることがで
きなかった。この点に関しては金属皮膜を施したフィラ
ー(例えばカーボン、シリカ、ガラスビーズ、ポリマ
ー、その他無機フィラー)を配合することにより、大電
流をが流れる半導体製品においても満足な導電性を得る
ことは可能であった。[0004] Solder to conductive resin paste has excellent conductivity and adhesiveness, and is inexpensive. In the case of discrete components such as diodes and transistors that mainly use this solder, it is necessary to flow electricity between the semiconductor element and the metal frame due to the structure of the product. However, due to recent environmental problems, each semiconductor maker is moving in a direction that does not use lead that is used for soldering. Furthermore, when solder is used, ICs are reduced in terms of cost reduction by reducing the necessary flux cleaning process. , The conductive resin paste used for LSI has been developed for discrete use, but there are products that have a large current of about 2 to 3 A flowing to the semiconductor device. I couldn't get the sex. In this regard, it is possible to obtain satisfactory conductivity even in a semiconductor product through which a large current flows by blending a filler coated with a metal film (for example, carbon, silica, glass beads, a polymer, and other inorganic fillers). there were.
【0005】しかし大電流を流す半導体製品ではこの電
流により、多量の熱を発生し、この発熱が生じることで
導電性樹脂ペーストの温度が高くなる。その場合熱抵抗
により電流が流れにくくなり、半導体製品としての信頼
性を低下させるという結果を招いている。従ってこの様
な導電性には優れるが、熱放散性に劣る導電性樹脂ペー
ストを使用する場合には充分な冷却機構を持った半導体
製品でなければならなかったが、コストアップにつなが
り実用的ではなかった。[0005] However, in a semiconductor product in which a large current flows, a large amount of heat is generated by this current, and this heat is generated, thereby increasing the temperature of the conductive resin paste. In this case, the current becomes difficult to flow due to the thermal resistance, and the reliability of the semiconductor product is reduced. Therefore, when using a conductive resin paste that is excellent in such conductivity but inferior in heat dissipation, it must be a semiconductor product with a sufficient cooling mechanism, but it increases the cost and is not practical. Did not.
【0006】[0006]
【発明が解決しようとする課題】本発明は導電性に優
れ、更に熱放散性にも優れる導電性樹脂ペーストを提供
するものである。SUMMARY OF THE INVENTION The present invention provides a conductive resin paste having excellent conductivity and heat dissipation.
【0007】[0007]
【課題を解決するための手段】本発明は(A)平均粒径
が5〜30μmの球状ニッケル粉、(B)平均粒径が
0.5〜15μmの銀粉、(C)室温で液状のエポキシ
樹脂を必須成分として、該成分中に球状ニッケル粉
(A)が10〜90重量%、銀粉(B)が5〜85重量
%含まれており、尚かつ(A)+(B)が80〜97重
量%であることを特徴とする導電性樹脂ペースト及び上
記の導電性樹脂ペーストを用いて製造された半導体装置
に関するものである。The present invention provides (A) a spherical nickel powder having an average particle size of 5 to 30 μm, (B) a silver powder having an average particle size of 0.5 to 15 μm, and (C) an epoxy liquid which is liquid at room temperature. Resin is an essential component, which contains 10 to 90% by weight of spherical nickel powder (A), 5 to 85% by weight of silver powder (B), and (A) + (B) is 80 to 90% by weight. The present invention relates to a conductive resin paste characterized by being 97% by weight and a semiconductor device manufactured using the conductive resin paste.
【0008】[0008]
【発明の実施の形態】本発明の様な半導体用導電性樹脂
ペーストは導電性を付与するために通常フィラーに銀粉
を用いるが、本発明では銀粉だけではなくニッケル粉が
必須である。銀粉にニッケル粉を併用した理由はより導
電性、熱放散性を向上させる場合、当然金属の比率を上
昇させるのが常套手段である。しかし銀粉のみでこの様
な高充填の導電性樹脂ペーストを作製しようとすると作
製時に使用する三本ロールにおけるロールの回転による
機械的な力で銀粉がつぶれてしまい、結果として銀粉が
造粒してしまうため十分に分散されず、導電性、熱放散
性、作業性を著しく低下させてしまう。そこで銀粉にく
らべ機械的に強いニッケル粉を添加することにより銀粉
のつぶれを防ぐものである。しかしつぶれやすい銀粉の
粒径がニッケル粉の粒径より大きいとロールによりつぶ
れる可能性が大きい。そこで本発明では銀粉の粒径はニ
ッケル粉の粒径よりも小さいものが好ましい。一方、ニ
ッケル粉だけで導電性を得ようとすると半導体製品での
信頼性試験における吸湿によりニッケル表面に酸化膜的
な絶縁層が生じるため抵抗が大きくなる。従ってニッケ
ルより化学的な銀を併用し、導電性を維持することが本
発明のポイントである。BEST MODE FOR CARRYING OUT THE INVENTION In the conductive resin paste for semiconductors according to the present invention, silver powder is usually used as a filler for imparting conductivity. In the present invention, not only silver powder but also nickel powder is essential. The reason why nickel powder is used in combination with silver powder is that it is customary to increase the proportion of metal when improving conductivity and heat dissipation. However, when attempting to produce such a highly-filled conductive resin paste using only silver powder, the silver powder is crushed by mechanical force due to the rotation of the three rolls used in the production, and as a result, the silver powder is granulated. Therefore, they are not sufficiently dispersed and the conductivity, heat dissipation, and workability are significantly reduced. Therefore, the addition of nickel powder which is mechanically stronger than silver powder prevents the silver powder from being crushed. However, if the particle size of the silver powder that is easily crushed is larger than the particle size of the nickel powder, the possibility of crushing by the roll is large. Therefore, in the present invention, the particle size of the silver powder is preferably smaller than the particle size of the nickel powder. On the other hand, if an attempt is made to obtain conductivity only with nickel powder, the resistance increases because an insulating film-like insulating layer is formed on the nickel surface due to moisture absorption in a reliability test of a semiconductor product. Therefore, the point of the present invention is to maintain the conductivity by using chemical silver in combination with nickel.
【0009】本発明ではニッケル粉と銀粉の併せた量が
80〜97重量%で無ければならない。ニッケル粉と銀
粉を併せた量が80重量%より少ないと導電性と熱放散
性に劣る。また97重量%より多いと粘度が高くなり過
ぎ塗布作業性が著しく低下する。球状ニッケル粉が10
〜90重量%、銀粉が5〜85重量%であるのが望まし
い。球状ニッケル粉が10重量%を下回ると銀粉の造粒
が激しく分散性が著しく低下するため導電性が低下す
る。球状ニッケル粉が90重量%を越えると吸水後の導
電性が低下するので好ましくない。In the present invention, the combined amount of nickel powder and silver powder must be 80 to 97% by weight. If the combined amount of the nickel powder and the silver powder is less than 80% by weight, the conductivity and the heat dissipation are poor. On the other hand, if it is more than 97% by weight, the viscosity becomes too high and the coating workability is remarkably reduced. 10 spherical nickel powder
It is desirable that the silver powder be 5 to 90% by weight and the silver powder be 5 to 85% by weight. If the content of the spherical nickel powder is less than 10% by weight, the silver powder is excessively granulated and the dispersibility is remarkably reduced. If the spherical nickel powder exceeds 90% by weight, the conductivity after absorbing water is undesirably reduced.
【0010】本発明で用いるニッケル粉は球状が望まし
い。本発明の様に高充填にする場合、粒子の形状は球状
の方が比表面積が小さくタップ密度が小さいためより多
くの粒子を充填することができるので好ましい。ニッケ
ル粉の平均粒径は5〜30μmが望ましい。粒径がこれ
より小さいと粘度が高くなり金属粉の高充填化は困難に
なる。またこれより大きいと塗布した場合のペースト厚
みが大きくなるため導電性が劣る。The nickel powder used in the present invention is preferably spherical. In the case of high filling as in the present invention, spherical particles are preferable because more particles can be filled because the specific surface area is small and the tap density is small. The average particle size of the nickel powder is preferably 5 to 30 μm. If the particle size is smaller than this, the viscosity increases and it becomes difficult to highly fill the metal powder. On the other hand, if it is larger than this, the thickness of the paste when applied becomes large, resulting in poor conductivity.
【0011】本発明に用いる銀粉の平均粒径は0.5〜
15μmが望ましい。形状は球状の方がより高充填化が
可能ではあるが、本発明の様な比較的粒径の大きい球状
ニッケル粉を添加により粘度が低下するためフレーク状
の銀粉であっても良好な作業性が得られるため特に限定
するものではない。平均粒径が0.5μmより小さいと
球状ニッケル粉の添加でもロール混練が不可能、もしく
は混練が可能な場合でも粘度が高過ぎてディスペンスは
おろかスクリーン印刷による塗布も出来ない高い粘度に
なってしまう。逆に平均粒径が15μmより大きい粒径
を使用すると粒度分布が非常に狭くなり、流動性が低下
するため、塗れ広がり性が著しく低下するので好ましく
ない。The silver powder used in the present invention has an average particle size of 0.5 to
15 μm is desirable. Spherical shape allows higher filling, but the addition of spherical nickel powder having a relatively large particle size as in the present invention lowers the viscosity. Is not particularly limited because it is obtained. If the average particle size is smaller than 0.5 μm, roll kneading is impossible even with the addition of spherical nickel powder, or even if kneading is possible, the viscosity is too high and the dispensing becomes too viscous, not to mention coating by screen printing. . Conversely, if the average particle size is larger than 15 μm, the particle size distribution becomes extremely narrow, and the fluidity is reduced, so that the spreadability is remarkably reduced.
【0012】本発明に用いるエポキシ樹脂は常温で液状
のものに限定しているが、常温で液状でないと銀粉との
混練において、溶剤をより多く必要とする。溶剤は気泡
発生の原因となり、硬化物の接着強度を低下させてしま
うので好ましくない。本発明に用いるエポキシ樹脂とし
て例えばビスフェノールA、ビスフェノールF,フェノ
ールノボラックとエピクロルヒドリンとの反応で得られ
るポリグリシジルエーテルで常温のもの、ビニルシクロ
ヘキセンジオキシド、ジシクロペンタジエンオキシド、
アリサイクリックジエポキシ−アジペイドの様な脂環式
エポキシ、更にn−ブチルグリシジルエーテル、バーサ
ティック酸グリシジルエステル、スチレンオキサイドフ
ェニルグリシジルエーテル、ブチルフェニルグリシジル
エーテル、クレグリシジルエーテル、ジシクロペンタジ
エンジエポキシドの様な通常エポキシ樹脂の希釈剤とし
て用いられるものがある。Although the epoxy resin used in the present invention is limited to a liquid at room temperature, if it is not liquid at room temperature, more solvent is required for kneading with silver powder. The solvent is not preferable because it causes bubbles and lowers the adhesive strength of the cured product. Examples of the epoxy resin used in the present invention include bisphenol A, bisphenol F, polyglycidyl ether obtained by the reaction of phenol novolak with epichlorohydrin at room temperature, vinylcyclohexene dioxide, dicyclopentadiene oxide,
Alicyclic epoxy such as alicyclic diepoxy-adipate, furthermore n-butyl glycidyl ether, versidic acid glycidyl ester, styrene oxide phenyl glycidyl ether, butyl phenyl glycidyl ether, creglycidyl ether, dicyclopentadiene diepoxide Some of them are commonly used as diluents for epoxy resins.
【0013】本発明において硬化剤として用いるのは活
性水素を分子内に持った化合物が望ましい。この様な化
合物にはフェノール類(例えばビスフェノールA、ビス
フェノールF、ビスフェノールAP、ビスフェノール
S、ビスフェノールZ、ジメチルビスフェノールA、ジ
メチルビスフェノールF、テトラメチルビスフェノール
A、テトラメチルビスフェノールF、ビフェノール、テ
トラメチルビフェノール、ジヒドロキシジフェニルエー
テル、ジヒドロキシベンゾフェノン、o−ヒドロキシフ
ェノール、m−ヒドロキシフェノール、p−ヒドロキシ
フェノール、、フェノールノボラックやオルソクレゾー
ルノボラック等のポリフェノール類、トリヒドロキシフ
ェニルメタンやトリヒドロキシフェニルメタン等のトリ
スフェノール類)、一級アミン、ポリアミン類、イミゾ
ゾール等が挙げられる。またこれらは単独でも混合して
用いても良い。In the present invention, a compound having active hydrogen in the molecule is preferably used as a curing agent. Such compounds include phenols (for example, bisphenol A, bisphenol F, bisphenol AP, bisphenol S, bisphenol Z, dimethyl bisphenol A, dimethyl bisphenol F, tetramethyl bisphenol A, tetramethyl bisphenol F, biphenol, tetramethyl biphenol, dihydroxy Diphenyl ether, dihydroxybenzophenone, o-hydroxyphenol, m-hydroxyphenol, p-hydroxyphenol, polyphenols such as phenol novolak and orthocresol novolac, trisphenols such as trihydroxyphenylmethane and trihydroxyphenylmethane), primary amines , Polyamines, imizazole and the like. These may be used alone or as a mixture.
【0014】更に本発明の樹脂組成物には必要に応じて
硬化促進剤、顔料、消泡剤などの添加剤を用いることが
できる。本発明の製造方法は例えば各成分を予備混練し
た後、三本ロールを用いて混練し、ペーストを得て真空
下脱泡することなどがある。Further, additives such as a curing accelerator, a pigment and an antifoaming agent can be used in the resin composition of the present invention, if necessary. The production method of the present invention includes, for example, preliminarily kneading each component, kneading using a three-roll mill, obtaining a paste, and defoaming under vacuum.
【0015】[0015]
【実施例】以下に本発明を実施例で具体的に説明する。 実施例1〜10 ビスフェノールAとエピクロルヒドリンとの反応により
得られるジグリシジルエーテル(エポキシ当量180で
常温で液状、以下エポキシ樹脂)、希釈剤としてクレジ
ルグリシジルエーテル(以下CGE)、硬化剤としてフ
ェノールノボラック(水酸基当量110)、2−フェニ
ル−4−メチルイミダゾール(2P4MZ)、、更に平
均粒径6、28μmの球状ニッケル粉及び平均粒径1、
13μmの球状銀粉と平均粒径13μmのフレーク銀粉
を表1及び表2に示す割合で配合し、3本ロールで混練
して導電性樹脂ペーストを得た。この導電性樹脂ペース
トを真空チャンバーにて2mmHgで30分脱泡後、以
下に示す方法により各種性能を評価した。評価結果を表
1及び表2に示す。The present invention will be specifically described below with reference to examples. Examples 1 to 10 Diglycidyl ether obtained by the reaction of bisphenol A and epichlorohydrin (liquid at room temperature with an epoxy equivalent of 180, hereinafter epoxy resin), cresyl glycidyl ether (CGE) as diluent, and phenol novolak as curing agent (CGE) Hydroxyl equivalent 110), 2-phenyl-4-methylimidazole (2P4MZ), further, spherical nickel powder having an average particle diameter of 6, 28 μm and an average particle diameter of 1,
13 μm spherical silver powder and flake silver powder having an average particle diameter of 13 μm were blended at the ratios shown in Tables 1 and 2, and kneaded with a three-roll mill to obtain a conductive resin paste. After defoaming the conductive resin paste in a vacuum chamber at 2 mmHg for 30 minutes, various performances were evaluated by the following methods. The evaluation results are shown in Tables 1 and 2.
【0016】[0016]
【表1】 [Table 1]
【0017】[0017]
【表2】 [Table 2]
【0018】粘度:E型粘度計(3°コーン)を用い、
25℃、2.5rpmでの測定値。 体積抵抗率:スライドガラス上にペーストを幅4mm、
厚み30μmに塗布し、120℃オーブン中で60分間
硬化した後の硬化物の体積抵抗率を測定した。 垂直体積抵抗率:銅フレーム上にペーストをペースト塗
布し、2X2mmの銅板を120℃オーブン中で60分
間硬化した後の銅板表面と銅フレームの間の電圧を求
め、そこから硬化物の垂直体積抵抗率を算出した。又温
度85℃、湿度85%の恒温糟に168時間放置した後
の垂直体積抵抗率も測定した。 350℃熱時接着強度:2mm角のシリコンチップをペ
ーストを用いて銅フレームにマウントし180℃オーブ
ン中で60分間硬化した。硬化後、プッシュプルゲージ
を用い350℃での熱時ダイシェア強度を測定した。 拡がり性:銅フレームにペーストを塗布し、室温に1時
間放置してシリコンチップをマウントした時にチップの
端までペーストが広がるか評価した。 総合評価:粘度、体積抵抗率及び熱時接着強度の全てを
良好なものを○、1つでも不満足なものを×とした。Viscosity: Using an E-type viscometer (3 ° cone),
Measured at 25 ° C. and 2.5 rpm. Volume resistivity: paste 4 mm wide on a glass slide,
The coating was applied to a thickness of 30 μm and cured in an oven at 120 ° C. for 60 minutes, and the volume resistivity of the cured product was measured. Vertical volume resistivity: After applying a paste on a copper frame and curing a 2 × 2 mm copper plate in a 120 ° C. oven for 60 minutes, the voltage between the copper plate surface and the copper frame is determined, and the vertical volume resistance of the cured product is determined therefrom. The rate was calculated. In addition, the vertical volume resistivity after standing in a thermostat at a temperature of 85 ° C. and a humidity of 85% for 168 hours was also measured. 350 ° C. hot adhesive strength: A 2 mm square silicon chip was mounted on a copper frame using a paste and cured in a 180 ° C. oven for 60 minutes. After curing, the die shear strength under heat at 350 ° C. was measured using a push-pull gauge. Spreadability: The paste was applied to a copper frame and left at room temperature for 1 hour to evaluate whether the paste spread to the edge of the chip when the silicon chip was mounted. Overall evaluation: Good for all of the viscosity, volume resistivity, and adhesive strength under heat was rated as Good, and even one that was unsatisfactory was rated as Poor.
【0019】比較例1〜13 表3及び表4に示す配合割合で実施例と全く同様にして
導電性樹脂ペーストを作製した。Comparative Examples 1 to 13 Conductive resin pastes were prepared in exactly the same manner as in the examples with the mixing ratios shown in Tables 3 and 4.
【0020】[0020]
【表3】 [Table 3]
【0021】[0021]
【表4】 [Table 4]
【0022】比較例1、2 銀粉のみまたはニッケル粉
の量が請求範囲を下回った場合、混練時に銀粉が造粒
し、ペーストにならない。 比較例3 ニッケル粉と銀粉でペーストを作製したが、
塗れ広がり性が低下した。 比較例4、5 ニッケル粉のみまたは請求範囲を下回る
銀粉配合量の場合、ペーストは作製できたが吸湿後の導
電性が低下した。 比較例6 ニッケル粉の平均粒径が銀粉のそれを下回っ
た場合、銀粉の造粒によりペーストが作製出来なかっ
た。 比較例7 ニッケル粉の平均粒径が5μmより小さい
時、粘度が高くなりすぎるため混練が出来なかった。 比較例8 ニッケル粉の平均粒径が30μmより大きい
場合、混練は出来るがニッケル粉の粒径が大きいためペ
ースト厚が厚くなるため、満足する導電性を得ることは
出来なかった。 比較例9 銀粉の平均粒径が小さすぎるため、粘度が高
くなりすぎるため混練が困難であった。 比較例10 銀粉の平均粒径が大きいため、ペースト厚
が厚くなり、満足いく導電性を得ることは出来なかっ
た。 比較例11、12 ニッケル粉と銀粉の配合量が80重
量%を下回った場合、満足する導電性は得られなかっ
た。 比較例13 ニッケル粉と銀粉の配合量が97重量%を
上回った場合、樹脂分が少なすぎるためペーストには至
らなかった。Comparative Examples 1 and 2 When the amount of silver powder alone or the amount of nickel powder is less than the claimed range, the silver powder is granulated during kneading and does not form a paste. Comparative Example 3 A paste was prepared using nickel powder and silver powder.
The spreadability of the coating decreased. Comparative Examples 4 and 5 In the case of the nickel powder alone or the silver powder content less than the claimed range, a paste could be produced but the conductivity after moisture absorption was reduced. Comparative Example 6 When the average particle size of the nickel powder was smaller than that of the silver powder, a paste could not be produced due to the granulation of the silver powder. Comparative Example 7 When the average particle size of the nickel powder was smaller than 5 μm, kneading could not be performed because the viscosity was too high. Comparative Example 8 When the average particle size of the nickel powder was larger than 30 μm, kneading was possible but the paste thickness was large due to the large particle size of the nickel powder, so that satisfactory conductivity could not be obtained. Comparative Example 9 Since the average particle size of the silver powder was too small, the viscosity was too high and kneading was difficult. Comparative Example 10 Since the average particle size of the silver powder was large, the paste thickness was large, and satisfactory conductivity could not be obtained. Comparative Examples 11 and 12 When the compounding amount of nickel powder and silver powder was less than 80% by weight, satisfactory conductivity was not obtained. Comparative Example 13 When the blending amount of the nickel powder and the silver powder exceeded 97% by weight, the amount of the resin was too small to obtain a paste.
【0023】[0023]
【発明の効果】本発明の導電性樹脂ペーストは半導体素
子と金属フレーム間の導電性が良好で、尚かつダイボン
ディング時のペーストの濡れ拡がり性が良好で、更にナ
トリウム、塩素などのイオン性不純物が少なく銅、42
合金等の金属フレーム、セラミック基板、ガラスエポキ
シ等の有機基板へのIC、LSI等の半導体素子の接着
に用いることができる。The conductive resin paste of the present invention has good conductivity between the semiconductor element and the metal frame, has good wet spreadability of the paste during die bonding, and further has ionic impurities such as sodium and chlorine. Less copper, 42
It can be used for bonding semiconductor elements such as ICs and LSIs to metal frames such as alloys, ceramic substrates, and organic substrates such as glass epoxy.
Claims (2)
ッケル粉、(B)平均粒径が0.5〜15μmの銀粉、
(C)室温で液状のエポキシ樹脂を必須成分として、該
成分中に球状ニッケル粉(A)が10〜90重量%、銀
粉(B)が5〜85重量%含まれており、尚かつ(A)
+(B)が80〜97重量%であることを特徴とする導
電性樹脂ペースト。(A) a spherical nickel powder having an average particle size of 5 to 30 μm, (B) a silver powder having an average particle size of 0.5 to 15 μm,
(C) An epoxy resin which is liquid at room temperature is an essential component, which contains 10 to 90% by weight of spherical nickel powder (A) and 5 to 85% by weight of silver powder (B). )
+ (B) is 80 to 97% by weight of the conductive resin paste.
いて製造された半導体装置。2. A semiconductor device manufactured by using the conductive resin paste according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9039507A JPH10237409A (en) | 1997-02-24 | 1997-02-24 | Conductive resin paste and semiconductor device manufactured using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9039507A JPH10237409A (en) | 1997-02-24 | 1997-02-24 | Conductive resin paste and semiconductor device manufactured using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10237409A true JPH10237409A (en) | 1998-09-08 |
Family
ID=12554967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9039507A Pending JPH10237409A (en) | 1997-02-24 | 1997-02-24 | Conductive resin paste and semiconductor device manufactured using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10237409A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1192739A (en) * | 1997-09-18 | 1999-04-06 | Sumitomo Bakelite Co Ltd | Conductive resin paste and semiconductor device manufactured using the same |
| CN107275227A (en) * | 2016-04-04 | 2017-10-20 | 日亚化学工业株式会社 | Metal sintered slurry and its manufacture method, the manufacture method of conductive material |
| KR20180070595A (en) * | 2015-10-15 | 2018-06-26 | 헨켈 아이피 앤드 홀딩 게엠베하 | Use of nickel and nickel containing alloys as conductive fillers in adhesive formulations |
-
1997
- 1997-02-24 JP JP9039507A patent/JPH10237409A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1192739A (en) * | 1997-09-18 | 1999-04-06 | Sumitomo Bakelite Co Ltd | Conductive resin paste and semiconductor device manufactured using the same |
| KR20180070595A (en) * | 2015-10-15 | 2018-06-26 | 헨켈 아이피 앤드 홀딩 게엠베하 | Use of nickel and nickel containing alloys as conductive fillers in adhesive formulations |
| JP2018538381A (en) * | 2015-10-15 | 2018-12-27 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | Use of nickel and nickel-containing alloys as conductive fillers in adhesive formulations. |
| CN107275227A (en) * | 2016-04-04 | 2017-10-20 | 日亚化学工业株式会社 | Metal sintered slurry and its manufacture method, the manufacture method of conductive material |
| CN107275227B (en) * | 2016-04-04 | 2022-11-01 | 日亚化学工业株式会社 | Metal powder sintering slurry and manufacturing method thereof, and manufacturing method of conductive material |
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