JPH10249737A - Polishing pad for magnetic recording medium substrate and polishing method - Google Patents
Polishing pad for magnetic recording medium substrate and polishing methodInfo
- Publication number
- JPH10249737A JPH10249737A JP9061294A JP6129497A JPH10249737A JP H10249737 A JPH10249737 A JP H10249737A JP 9061294 A JP9061294 A JP 9061294A JP 6129497 A JP6129497 A JP 6129497A JP H10249737 A JPH10249737 A JP H10249737A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- substrate
- polishing pad
- surface roughness
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
(57)【要約】
【課題】 磁気記録媒体用基板の表面粗さを所定範囲と
するための研磨用パッドと研磨方法を提供する。
【解決手段】 不織布の繊維基材にポリウレタン樹脂を
含浸させ、湿式凝固させ、ＪＩＳ Ｋ６３０１で規定さ
れる硬度が７５〜８５である研磨用パッドで基板を研磨
する。これにより、基板の平均表面粗さは１３〜４０Å
に範囲に収まる。研磨用パッドに、所定の間隔で、所定
の幅と深さの溝を設けてもよい。
(57) Abstract: Provided are a polishing pad and a polishing method for keeping the surface roughness of a substrate for a magnetic recording medium within a predetermined range. SOLUTION: A nonwoven fabric base material is impregnated with a polyurethane resin, wet-solidified, and the substrate is polished with a polishing pad having a hardness of 75 to 85 specified in JIS K6301. Thereby, the average surface roughness of the substrate is 13 to 40 degrees.
Within the range. The polishing pad may be provided with grooves of a predetermined width and depth at predetermined intervals.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は磁気記録媒体用基板
の研磨用パッド及びこれを用いた研磨方法に関する。The present invention relates to a polishing pad for a substrate for a magnetic recording medium and a polishing method using the same.
【０００２】[0002]
【従来の技術】磁気記録媒体用基板（以下、基板と略称
する）は、近年、情報記録容量の高密度化の要求にとも
ない、その表面の平滑性を向上させることを要求されて
いる。２．５，３．５インチなどの小型磁気記録媒体用
基板の研磨には、生産性が高く、シリコンウェハのポリ
ッシングに使われている両面ラッピング方式の研磨機が
広く用いられている。この基板の表面を平滑にさせる研
磨工程では、研磨用パッドが固定された２つの研磨工具
をそれぞれ基板の両面に密着させるとともに、研磨用パ
ッドと基板研磨面との間に研磨液を供給して回転、摺動
することによって、基板の両面が同時に研磨される。2. Description of the Related Art In recent years, a substrate for a magnetic recording medium (hereinafter abbreviated as a substrate) has been required to improve its surface smoothness in accordance with a demand for a higher density of information recording capacity. For polishing small magnetic recording medium substrates such as 2.5 and 3.5 inches, a double-sided lapping type polishing machine used for polishing a silicon wafer is widely used because of high productivity. In the polishing step for smoothing the surface of the substrate, two polishing tools each having the polishing pad fixed thereto are brought into close contact with both surfaces of the substrate, and a polishing liquid is supplied between the polishing pad and the substrate polishing surface. By rotating and sliding, both surfaces of the substrate are simultaneously polished.
【０００３】特に、ガラスおよび結晶化ガラスは、従
来、主として用いられてきたアルミニウム合金に比べ、
熱膨張率が小さく機械加工性等も優れているために、基
板材料として有望視されている。ガラスおよび結晶化ガ
ラスの研磨では、一般に、ポリウレタン製研磨用パッド
が固定された研磨工具を使用し、平均粒径１μm 程度の
ＣｅＯ2 の研磨剤を懸濁せた研磨液を使用する。ＣｅＯ
2 研磨剤は傷を付けず良好な研磨面を得ることができ、
さらに、高密度記録が可能となる磁気記録媒体用基板に
要求されている平滑で平坦な基板表面の加工ができる。
平滑性を表す表面粗さはＲa で１nm程度は比較的容易に
得られている。また、平坦性を表す面精度は、５μm 程
度が得られている。[0003] In particular, glass and crystallized glass are compared with aluminum alloys which have been mainly used in the past.
Because of its low coefficient of thermal expansion and excellent machinability, it is considered promising as a substrate material. In the polishing of glass and crystallized glass, a polishing tool to which a polishing pad made of polyurethane is fixed is generally used, and a polishing liquid in which an abrasive of CeO 2 having an average particle size of about 1 μm is suspended is used. CeO
2 Abrasive can obtain a good polished surface without scratching,
Further, a smooth and flat substrate surface required for a magnetic recording medium substrate capable of high-density recording can be processed.
The surface roughness representing the smoothness of about 1 nm in Ra is relatively easily obtained. In addition, the surface accuracy representing the flatness is about 5 μm.
【０００４】[0004]
【発明が解決しようとする課題】磁気記録媒体用基板に
おいては、磁性膜の磁気特性と磁気ヘッドの吸着防止の
観点から、基板の表面粗さには適正な範囲がある。従っ
て、基板の表面粗さを研磨によって所定の範囲内で仕上
げなければならない。しかし、従来の研磨では、表面粗
さを所定の範囲内で仕上げにくく、また、製造ロットに
よってバラツキが生じ易いという問題点もあった。In a substrate for a magnetic recording medium, the surface roughness of the substrate has an appropriate range from the viewpoint of the magnetic characteristics of the magnetic film and the prevention of magnetic head adsorption. Therefore, the surface roughness of the substrate must be finished within a predetermined range by polishing. However, in the conventional polishing, there is a problem that it is difficult to finish the surface roughness within a predetermined range, and that there is a tendency that variations occur depending on the production lot.
【０００５】つまり、従来の方法で基板の表面粗さを所
望の範囲で安定して得ようとすると、研磨圧、研磨速度
等の加工条件を最適化しても面精度及び基板形状が研磨
剤の粒径や研磨液の供給方法等の影響を受けるために、
実現できなかった。そこで、本発明は、所定範囲の表面
粗さを得るために用いられる基板の研磨用パッドと、こ
れを用いた基板の研磨方法を提供することを目的とす
る。That is, in order to stably obtain the surface roughness of a substrate in a desired range by a conventional method, even if the processing conditions such as the polishing pressure and the polishing rate are optimized, the surface accuracy and the substrate shape are not the same as those of the abrasive. To be affected by the particle size and the method of supplying the polishing liquid, etc.
Could not be realized. Accordingly, an object of the present invention is to provide a substrate polishing pad used to obtain a predetermined range of surface roughness, and a method of polishing a substrate using the same.
【０００６】[0006]
【課題を解決するための手段】本発明は、磁気記録媒体
用基板（基板）の研磨用パッドとして、不織布の繊維基
材にポリウレタン樹脂を含浸させ、湿式凝固させて作製
したパッドであって、この研磨用パッドは、ＪＩＳ Ｋ
６３０１で規定される硬度が７５〜８５である（請求項
１）。SUMMARY OF THE INVENTION The present invention provides a pad for polishing a substrate (substrate) for a magnetic recording medium obtained by impregnating a nonwoven fabric base material with a polyurethane resin and wet-solidifying the same. This polishing pad is made of JIS K
The hardness specified by 6301 is 75 to 85 (claim 1).
【０００７】また、この研磨用パッドに、１０mm〜３０
mmの任意の間隔で、１mm〜３mmの任意の幅と、該研磨用
パッドの厚さの５分の２以上５分の４以下の任意の深さ
の溝を入れるのが好ましい（請求項２）。さらに本発明
は、この研磨用パッドを用いて、基板の平均表面粗さＲ
a が１３Å〜４０Åの範囲になるように研磨する方法で
ある。Further, the polishing pad has a thickness of 10 mm to 30 mm.
It is preferable to form grooves having an arbitrary width of 1 mm to 3 mm and an arbitrary depth of not less than 2/5 and not more than 4/5 of the thickness of the polishing pad at an arbitrary interval of mm. ). Further, the present invention provides a method for manufacturing a polishing pad using the polishing pad of the present invention.
This is a method of polishing so that a is in the range of 13 ° to 40 °.
【０００８】[0008]
【発明の実施の形態】従来、磁気記録媒体用基板研磨方
法においては、研磨される基板の表面粗さが、所定の範
囲内で仕上げにくく、表面粗さが製造ロットによって異
なるといった再現性の問題があった。この再現性の悪い
表面状態となってしまう理由として、実験結果から次の
点が明らかになった。DESCRIPTION OF THE PREFERRED EMBODIMENTS Conventionally, in a method of polishing a substrate for a magnetic recording medium, there is a problem of reproducibility that the surface roughness of a substrate to be polished is difficult to finish within a predetermined range and the surface roughness varies depending on a production lot. was there. The following points have been clarified from the experimental results as the reason why the surface state becomes poor in reproducibility.
【０００９】ポリウレタン製研磨用パッドが固定された
研磨工具と平均粒径 1.2μm （最大粒径8.4 μm ）のＣ
ｅＯ2 研磨剤の組み合わせで研磨加工を施すと、基板の
表面粗さが必要以上に向上してしまう。そこで、ＣｅＯ
2 研磨剤を平均粒径1.3 〜1.8 μm 、最大粒径12.0μm
の大きなものに変更して研磨を試みた。しかし、この大
きな砥粒を使っても、同様の表面粗さになった。A polishing tool having a polyurethane polishing pad fixed thereto and a C having an average particle size of 1.2 μm (maximum particle size 8.4 μm)
When polishing is performed with a combination of eO 2 abrasives, the surface roughness of the substrate is unnecessarily improved. So, CeO
(2) Use abrasives with an average particle size of 1.3 to 1.8 μm and a maximum particle size of 12.0 μm
I tried polishing by changing to a bigger one. However, similar surface roughness was obtained even with the use of these large abrasive grains.
【００１０】この理由として、市販のＣｅＯ2 研磨剤は
ＣｅＯ2 単結晶を凝集した２次粒子であり、研磨加工を
行うにつれて細分化してしまうことが挙げられる。従っ
て、最初から、細かい研磨剤を用いたのと同様の結果に
なる。比較的硬質のポリウレタン製研磨用パッドで、平
均粒径１μm 程度のＣｅＯ2を研磨剤として使用すれば
研磨面の表面粗さはＲa ＝１nm程度に収束する。また、
研磨工程において平坦化を有効に促進させる因子は、研
磨面を引っかく作用である。しかし、粘弾性物質の研磨
用パッドが研磨剤を埋め込ませて保持し、それを研磨面
に押しつける作用を示すので、ＣｅＯ2 研磨剤の粒度制
御ではサブナノメートルのオーダーで基板の表面粗さを
制御することができなかった。[0010] The reason for this is that a commercially available CeO 2 abrasive is a secondary particle obtained by aggregating CeO 2 single crystals, and is fragmented as the polishing is performed. Therefore, the same result as when a fine abrasive is used from the beginning is obtained. When a relatively hard polyurethane polishing pad made of CeO 2 having an average particle size of about 1 μm is used as an abrasive, the surface roughness of the polished surface converges to about Ra = 1 nm. Also,
A factor that effectively promotes planarization in the polishing process is the effect of scratching the polished surface. However, since the polishing pad made of a viscoelastic substance has the effect of embedding and holding the abrasive and pressing it against the polished surface, the surface roughness of the substrate is controlled on the order of sub-nanometers by controlling the particle size of CeO 2 abrasive. I couldn't.
【００１１】そこで、本発明者らは、種々の硬度を有す
る研磨用パッドを用いて基板たるガラスを研磨加工し
た。研磨除去量は、市販の両面研磨機で 0.4〜１μm ／
min の最適範囲に保つことを念頭に検討した。その結
果、基板の表面粗さを、常に所定の範囲内で仕上げるた
めには研磨用パッドの材質を、不織布の繊維基材にポリ
ウレタン樹脂を含浸させ、湿式凝固させてＪＩＳ Ｋ６
３０１で規定される硬さ試験（Ａ形）で硬度７５〜８５
を有することが必要であることを見出した。本発明の研
磨用パッドを使用すると、粒径が細かい研磨剤と組み合
わせても、基板の表面粗さを所定の範囲内で仕上げるこ
とが可能となった。Then, the present inventors polished glass as a substrate using polishing pads having various hardnesses. Polishing removal amount is 0.4 to 1 μm /
We considered keeping in the optimum range of min. As a result, in order to always finish the surface roughness of the substrate within a predetermined range, the material of the polishing pad is impregnated with a polyurethane resin into a non-woven fiber base material, and wet-solidified according to JIS K6.
Hardness 75-85 in hardness test (A type) specified in 301
Was found to be necessary. When the polishing pad of the present invention is used, it becomes possible to finish the surface roughness of the substrate within a predetermined range even when combined with an abrasive having a small particle size.
【００１２】更に、本発明の研磨パッドに１０mm以上３
０mm以下の間隔で、幅１mm以上３mm以下、かつ研磨用パ
ッドの厚さの５分の２以上５分の４以下の深さの溝を入
れ、この研磨用パッドが固定された研磨工具を用いる
と、研磨液が研磨パッド用の中心部にまで流れ込んで、
研磨用パッド全体に行き渡り、基板の中心部まで研磨液
が入り込み、溝なしのものに比べ、基板の表面を均一に
研磨できた。Further, the polishing pad of the present invention has a thickness of 10 mm or more.
A groove having a width of 1 mm or more and 3 mm or less and a depth of 2/5 to 4/5 of the thickness of the polishing pad is formed at intervals of 0 mm or less, and a polishing tool to which the polishing pad is fixed is used. And, the polishing liquid flows to the center for the polishing pad,
The polishing liquid spread over the entire polishing pad and penetrated to the center of the substrate, and the surface of the substrate could be polished more uniformly than that without a groove.
【００１３】図１〜３は、研磨用パッド１に入れられた
溝２の状態を示す平面図である。図１に示す様に、溝２
が互いに直交している場合、図２に示す様に溝２が平行
な場合、図３に示す様に、溝２がある一定の角度を持っ
て交差している場合が例として挙げられる。本発明の研
磨方法を実現するためには、市販の両面研磨機が用いら
れた。図４は、基板を両面研磨する状態を示す模式図で
ある。両面研磨機の鋳鉄製の上の定盤に固定された研磨
用パッド３と、下の定盤に固定された研磨用パッド４と
の間に、基板１を密着させ適当な圧力をかけるととも
に、研磨用パッド３及び４と基板１との間にそれぞれ研
磨剤５を含んだ研磨液を供給して、回転、摺動させるこ
とによって、研磨が行われる。このとき、研磨用パッド
３及び４として、不織布の繊維基材にポリウレタン樹脂
を含浸させ、湿式凝固させてＪＩＳ Ｋ６３０１で規定
される硬さ試験（Ａ形）で硬度８２を有するものが上下
の定盤に貼り付けられる。FIGS. 1 to 3 are plan views showing the states of the grooves 2 inserted in the polishing pad 1. FIG. As shown in FIG.
Are perpendicular to each other, the grooves 2 are parallel as shown in FIG. 2, and the grooves 2 cross at a certain angle as shown in FIG. 3, for example. In order to realize the polishing method of the present invention, a commercially available double-side polishing machine was used. FIG. 4 is a schematic view showing a state where the substrate is polished on both sides. The substrate 1 is brought into close contact with the polishing pad 3 fixed to the upper platen made of cast iron of the double-side polishing machine and the polishing pad 4 fixed to the lower platen, and an appropriate pressure is applied. Polishing is performed by supplying a polishing liquid containing the polishing agent 5 between the polishing pads 3 and 4 and the substrate 1 and rotating and sliding the polishing liquid. At this time, as the polishing pads 3 and 4, those having a nonwoven fabric base material impregnated with a polyurethane resin, wet-solidified and having a hardness of 82 in a hardness test (A type) specified by JIS K6301 are upper and lower fixed. Pasted on the board.
【００１４】（第１の実施形態）本発明の研磨用パッド
を用いてガラス製基板の両面研磨を行った。この時の研
磨条件は、以下の通りである。研磨液は、酸化セリウム
の懸濁液で、研磨剤は、平均粒径 1.2μm 、最大粒径8.
4μm の細かいものを使用した。研磨加工圧力は３０〜
１２０ｇ／cm2、研磨時間は７０分、下定盤回転数は５
〜４０ＲＰＭ、上定盤回転数は５〜４０ＲＰＭ、研磨除
去量は 0.4〜１μm ／min である。(First Embodiment) Both sides of a glass substrate were polished using the polishing pad of the present invention. The polishing conditions at this time are as follows. The polishing liquid is a suspension of cerium oxide, and the abrasive has an average particle size of 1.2 μm and a maximum particle size of 8.
Fine particles of 4 μm were used. Polishing pressure is 30 ~
120 g / cm 2 , polishing time 70 minutes, lower platen rotation speed 5
The upper platen rotation speed is 5 to 40 RPM, and the polishing removal amount is 0.4 to 1 μm / min.
【００１５】以上の研磨加工によって作製した基板の表
面粗さを測定評価した。表面粗さの測定には接触型のデ
ィスク専用表面粗さ・微細形状測定装置（Ｔｅｎｃｏｒ
社製テンコールＰ−１２）を用いた。なお、Ｒa とは表
面粗さの一つの表示法で、基板上の一定領域の平均の表
面粗さを表す。測定の結果、上記方法により作製した基
板の表面粗さＲa は、１５〜２５Åと所望の範囲の値で
あった。The surface roughness of the substrate manufactured by the above polishing was measured and evaluated. For the measurement of surface roughness, a contact-type surface roughness / fine shape measurement device (Dedicated to Tencor)
(Tencor P-12, manufactured by KK). Note that the R a surface roughness one display method, representing an average surface roughness of a certain area on the substrate. As a result of the measurement, the surface roughness R a of the substrate manufactured by the above method was the value of the desired range and 15～25A.
【００１６】（第２の実施形態）次に、本発明の溝入り
の研磨用パッドを用いてガラス製基板の両面研磨を行っ
た。研磨用パッドに１５mmの間隔で、幅２mm、研磨用パ
ッドの厚さの２分の１の深さの溝を入れ、これを両面研
磨機の鋳鉄製の上の定盤に貼り付け、同様の研磨用パッ
ドを両面研磨機の鋳鉄製の下の定盤に貼り付けた。(Second Embodiment) Next, both sides of a glass substrate were polished using the grooved polishing pad of the present invention. A groove having a width of 2 mm and a depth of a half of the thickness of the polishing pad was formed in the polishing pad at intervals of 15 mm, and the groove was attached to a platen on a cast iron of a double-sided polishing machine. The polishing pad was affixed to the lower platen made of cast iron of the double-side polishing machine.
【００１７】この時の研磨条件は、以下の通りである。
研磨液は、酸化セリウムの懸濁液で、研磨剤は、平均粒
径 1.2μm 、最大粒径8.4μm の細かいものを使用し
た。研磨加工圧力は３０〜１２０ｇ／cm2、研磨時間は
４５分、下定盤回転数は５〜４０ＲＰＭ、上定盤回転数
は５〜４０ＲＰＭ、研磨除去量は 0.4〜１μm ／min で
ある。The polishing conditions at this time are as follows.
The polishing liquid was a suspension of cerium oxide, and the abrasive used was a fine one having an average particle size of 1.2 μm and a maximum particle size of 8.4 μm. The polishing pressure is 30 to 120 g / cm 2 , the polishing time is 45 minutes, the lower platen rotation speed is 5 to 40 RPM, the upper platen rotation speed is 5 to 40 RPM, and the polishing removal amount is 0.4 to 1 μm / min.
【００１８】以上の研磨加工によって作製した基板の表
面粗さを測定評価した。測定の結果、上記方法により作
製した基板の表面粗さＲa は、１５〜２５Åと所望の範
囲の値であった。また、基板の平坦度は３〜５μm の範
囲であった。The surface roughness of the substrate produced by the above polishing was measured and evaluated. As a result of the measurement, the surface roughness R a of the substrate manufactured by the above method was the value of the desired range and 15～25A. The flatness of the substrate was in the range of 3 to 5 μm.
【００１９】[0019]
【発明の効果】本発明の研磨用パッドによれば、磁気記
録媒体用基板の表面粗さを、常に所定の範囲内で仕上げ
ることができる。その結果、高性能の基板を安定して供
給するることが可能になった。上記の研磨用パッドに所
定の間隔で、所定の幅と深さをもった溝を入れると、研
磨加工速度を大幅に向上させることができようになっ
た。そして、加工時間も安定する様になり、平坦な面が
得易くなった。また、基板に入る研磨キズも抑えられる
様になった。更に、研磨用パッドの使用可能期限、いわ
ば研磨用パッドの寿命も大幅に延ばすことができた。According to the polishing pad of the present invention, the surface roughness of the substrate for a magnetic recording medium can always be finished within a predetermined range. As a result, it has become possible to stably supply a high-performance substrate. When grooves having a predetermined width and depth are formed at predetermined intervals in the polishing pad, the polishing speed can be greatly improved. Then, the processing time became stable, and a flat surface was easily obtained. Also, polishing scratches entering the substrate can be suppressed. In addition, the expiration date of the polishing pad, that is, the life of the polishing pad, can be greatly extended.
【図１】本発明の実施の形態に係る、溝が互いに直交し
た溝付き研磨用パッドの上面図である。FIG. 1 is a top view of a grooved polishing pad in which grooves are orthogonal to each other according to an embodiment of the present invention.
【図２】本発明の実施の形態に係る、平行な溝を有する
溝付き研磨用パッドの上面図である。FIG. 2 is a top view of a grooved polishing pad having parallel grooves according to an embodiment of the present invention.
【図３】本発明の実施の形態に係る、溝がある一定の角
度をもって交差した溝付き研磨用パッドの上面図であ
る。FIG. 3 is a top view of a grooved polishing pad crossing grooves at a certain angle according to an embodiment of the present invention.
【図４】基板を両面研磨する状態を示す模式図である。FIG. 4 is a schematic view showing a state where a substrate is polished on both sides.
１・・・・基板 ２・・・・溝 ３・・・・上定盤 ４・・・・下定盤 ５・・・・研磨剤 1 ··· Substrate 2 ··· Groove 3 ··· Upper platen 4 ··· Lower platen 5 ··· Abrasive
───────────────────────────────────────────────────── フロントページの続き (72)発明者 草野 辰一 神奈川県相模原市田名3330番地１ 株式会 社相模オプト内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Tatsuichi Kusano 3330-1 Tana, Sagamihara-shi, Kanagawa Pref.
Claims (3)
含浸させ、湿式凝固させた、ＪＩＳ Ｋ６３０１で規定
される硬度が７５〜８５であること、を特徴とする磁気
記録媒体用基板の研磨用パッド。1. A polishing pad for a substrate for a magnetic recording medium, wherein a nonwoven fabric base material is impregnated with a polyurethane resin and wet-solidified, and has a hardness of 75 to 85 specified by JIS K6301. .
任意の間隔で、１mm〜３mmの任意の幅と、該研磨用パッ
ドの厚さの５分の２以上５分の４以下の任意の深さの溝
を有すること、を特徴とする請求項１に記載の研磨用パ
ッド。2. The polishing pad has an arbitrary width of 1 mm to 3 mm at an arbitrary interval of 10 mm to 30 mm and an arbitrary width of 2/5 to 4/5 of the thickness of the polishing pad. The polishing pad according to claim 1, further comprising a groove having a depth.
用い、前記磁気記録媒体用基板の平均表面粗さＲa が１
３Å〜４０Åの範囲となるように研磨することを特徴と
する磁気記録媒体用基板の研磨方法。3. using the polishing pad according to claim 1 or claim 2, the average surface roughness R a of the substrate for the magnetic recording medium 1
A method for polishing a substrate for a magnetic recording medium, wherein the polishing is performed so as to be in a range of 3 ° to 40 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9061294A JPH10249737A (en) | 1997-03-14 | 1997-03-14 | Polishing pad for magnetic recording medium substrate and polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9061294A JPH10249737A (en) | 1997-03-14 | 1997-03-14 | Polishing pad for magnetic recording medium substrate and polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10249737A true JPH10249737A (en) | 1998-09-22 |
Family
ID=13167042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9061294A Pending JPH10249737A (en) | 1997-03-14 | 1997-03-14 | Polishing pad for magnetic recording medium substrate and polishing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10249737A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100698095B1 (en) | 2005-07-27 | 2007-03-23 | 동부일렉트로닉스 주식회사 | Molding apparatus for polishing pad and manufacturing method of polishing pad using same |
| WO2012090364A1 (en) * | 2010-12-28 | 2012-07-05 | コニカミノルタオプト株式会社 | Method for manufacturing glass substrate for magnetic recording medium |
| JP2014083617A (en) * | 2012-10-22 | 2014-05-12 | Crystal Kogaku:Kk | Polishing pad |
| JP2018039080A (en) * | 2016-09-07 | 2018-03-15 | 富士紡ホールディングス株式会社 | Polishing pad |
| WO2018052133A1 (en) * | 2016-09-16 | 2018-03-22 | ニッタ・ハース株式会社 | Polishing pad |
| CN115087519A (en) * | 2020-02-05 | 2022-09-20 | 爱思开矽得荣株式会社 | Polishing pad for wafer polishing device, and apparatus and method for manufacturing the same |
-
1997
- 1997-03-14 JP JP9061294A patent/JPH10249737A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100698095B1 (en) | 2005-07-27 | 2007-03-23 | 동부일렉트로닉스 주식회사 | Molding apparatus for polishing pad and manufacturing method of polishing pad using same |
| WO2012090364A1 (en) * | 2010-12-28 | 2012-07-05 | コニカミノルタオプト株式会社 | Method for manufacturing glass substrate for magnetic recording medium |
| JP5024496B2 (en) * | 2010-12-28 | 2012-09-12 | コニカミノルタアドバンストレイヤー株式会社 | Method for manufacturing glass substrate for magnetic recording medium |
| US9202505B2 (en) | 2010-12-28 | 2015-12-01 | Konica Minolta, Inc. | Method for manufacturing glass substrate for magnetic recording medium |
| JP2014083617A (en) * | 2012-10-22 | 2014-05-12 | Crystal Kogaku:Kk | Polishing pad |
| JP2018039080A (en) * | 2016-09-07 | 2018-03-15 | 富士紡ホールディングス株式会社 | Polishing pad |
| WO2018052133A1 (en) * | 2016-09-16 | 2018-03-22 | ニッタ・ハース株式会社 | Polishing pad |
| JPWO2018052133A1 (en) * | 2016-09-16 | 2019-07-04 | ニッタ・ハース株式会社 | Polishing pad |
| CN115087519A (en) * | 2020-02-05 | 2022-09-20 | 爱思开矽得荣株式会社 | Polishing pad for wafer polishing device, and apparatus and method for manufacturing the same |
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