JPH10261620A - 表面処理装置 - Google Patents
表面処理装置Info
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Abstract
(57)【要約】
【構成】プラズマを用いる表面処理装置で、プラズマ中
のイオンを加速するためのバイアス電源を間欠的にオン
オフ制御してかつエッチングに用いるハロゲンガスに酸
素などの堆積性ガスを混合した, 【効果】ハロゲンガスはエッチングを進行させ、堆積性
ガスはエッチングを阻害する働きがある。バイアス電源
で加速されたイオンはエッチング反応を促進する。堆積
性ガスは、絶縁物のようなハロゲンとの反応性が低い物
質に対してほど反応を阻害する効果が顕著になるので、
堆積性ガスの混合により、半導体と絶縁物のエッチング
速度の比、すなわち選択比が大きくなる。ここで、バイ
アス電源にオフサイクルを設けると、バイアス電源がオ
フすなわち加速イオンが試料表面に入射しない期間では
堆積性ガスの働きのみが顕著になり、選択比はバイアス
電源を連続にした場合と比べてさらに高くなる。
のイオンを加速するためのバイアス電源を間欠的にオン
オフ制御してかつエッチングに用いるハロゲンガスに酸
素などの堆積性ガスを混合した, 【効果】ハロゲンガスはエッチングを進行させ、堆積性
ガスはエッチングを阻害する働きがある。バイアス電源
で加速されたイオンはエッチング反応を促進する。堆積
性ガスは、絶縁物のようなハロゲンとの反応性が低い物
質に対してほど反応を阻害する効果が顕著になるので、
堆積性ガスの混合により、半導体と絶縁物のエッチング
速度の比、すなわち選択比が大きくなる。ここで、バイ
アス電源にオフサイクルを設けると、バイアス電源がオ
フすなわち加速イオンが試料表面に入射しない期間では
堆積性ガスの働きのみが顕著になり、選択比はバイアス
電源を連続にした場合と比べてさらに高くなる。
Description
【０００１】
【発明の属する技術分野】本発明は半導体素子の表面処
理装置にかかわり、特にプラズマを用いて半導体表面の
エッチングや成膜を行なう表面処理装置に関する。
理装置にかかわり、特にプラズマを用いて半導体表面の
エッチングや成膜を行なう表面処理装置に関する。
【０００２】
【従来の技術】半導体素子のエッチングや成膜に現在広
く用いられている装置は、プラズマを利用する装置であ
る。本発明はこのようなプラズマを利用した装置に広く
応用できるものであるが、ここではそのうちの一つであ
るECR(電子サイクロトロン共鳴)方式と呼ばれている装
置を例に取り従来技術を説明する。この方式では、外部
より磁場を印加した真空容器中でマイクロ波によりプラ
ズマを発生させる。磁場により電子はサイクロトロン運
動をし、この周波数とマイクロ波の周波数を共鳴させる
ことで効率良くプラズマを発生できる。また磁場により
プラズマの壁への拡散が抑えられ、高密度のプラズマが
発生できる。試料に入射するイオンを加速するために試
料にはバイアス電圧が印加される。プラズマとなるガス
には例えばエッチングを行なう場合には塩素やフッ素な
どのハロゲンガスが用いられる。エッチングのほかに膜
の堆積などにもこの装置は使われている。
く用いられている装置は、プラズマを利用する装置であ
る。本発明はこのようなプラズマを利用した装置に広く
応用できるものであるが、ここではそのうちの一つであ
るECR(電子サイクロトロン共鳴)方式と呼ばれている装
置を例に取り従来技術を説明する。この方式では、外部
より磁場を印加した真空容器中でマイクロ波によりプラ
ズマを発生させる。磁場により電子はサイクロトロン運
動をし、この周波数とマイクロ波の周波数を共鳴させる
ことで効率良くプラズマを発生できる。また磁場により
プラズマの壁への拡散が抑えられ、高密度のプラズマが
発生できる。試料に入射するイオンを加速するために試
料にはバイアス電圧が印加される。プラズマとなるガス
には例えばエッチングを行なう場合には塩素やフッ素な
どのハロゲンガスが用いられる。エッチングのほかに膜
の堆積などにもこの装置は使われている。
【０００３】この装置の主に高精度化をはかる目的で特
開平6-151360が知られている。この発明では、試料に印
加するバイアス電圧をオンーオフと間欠的に制御するこ
とにより、エッチングしたい物質であるSiと下地酸化膜
との選択比を高くする。
開平6-151360が知られている。この発明では、試料に印
加するバイアス電圧をオンーオフと間欠的に制御するこ
とにより、エッチングしたい物質であるSiと下地酸化膜
との選択比を高くする。
【０００４】
【発明が解決しようとする課題】近年の半導体素子で
は、その微細化に伴い加工の高精度化がこれまで以上に
要求されている。具体的には、MOS(metal oxide semico
nductor)トランジスタのゲート酸化膜の厚さは256M以降
のメモリ素子では約4nmになると予想されている。この
ような薄いゲート酸化膜を有する素子の加工にはこれま
で以上の高い選択比が要求されて、新しい技術が不可欠
となる。
は、その微細化に伴い加工の高精度化がこれまで以上に
要求されている。具体的には、MOS(metal oxide semico
nductor)トランジスタのゲート酸化膜の厚さは256M以降
のメモリ素子では約4nmになると予想されている。この
ような薄いゲート酸化膜を有する素子の加工にはこれま
で以上の高い選択比が要求されて、新しい技術が不可欠
となる。
【０００５】本発明の目的はこの新たな課題を解決し
て、Siなどの半導体と酸化膜などの絶縁物とのエッチン
グ速度について高い選択比を得る表面処理装置を提供す
ることである。
て、Siなどの半導体と酸化膜などの絶縁物とのエッチン
グ速度について高い選択比を得る表面処理装置を提供す
ることである。
【０００６】
【課題を解決するための手段】本発明によれば、上記目
的は、試料に印加するバイアス電源の出力を間欠的に制
御して、かつエッチングガスとして塩素などのエッチン
グを進行させるハロゲンガスと堆積性のあるガスを混合
させることにより、達成する。
的は、試料に印加するバイアス電源の出力を間欠的に制
御して、かつエッチングガスとして塩素などのエッチン
グを進行させるハロゲンガスと堆積性のあるガスを混合
させることにより、達成する。
【０００７】
（実施例１）以下実施例を図１により説明する。図１
(a)はプラズマエッチング装置の全体構成図である。マ
イクロ波電源１１から導波管１２と導入窓１３を介して
真空容器１４内にマイクロ波が導入される。真空容器１
４の材質は金属で内面に絶縁コーティングしてある。導
入窓１３の材質は石英、セラミックなど電磁波を透過す
る物質である。真空容器１４中にはガス導入管１１０か
らガスが導入される。電磁石１５の磁場強度はマイクロ
波の周波数と共鳴を起こすように設定されて、たとえば
周波数が2.45GHzならば磁場強度は875Gaussである。こ
の磁場強度でプラズマ１６中の電子のサイクロトロン運
動が電磁波の周波数と共鳴するために、効率よく電磁波
のエネルギーがプラズマに供給され高密度のプラズマが
できる。試料１７は試料台１８の上に設置される。試料
に入射するイオンを加速するために、バイアス電源１９
が試料台１８に接続されている。バイアス電源の周波数
に特に制限はないが、通常バイアス電源の周波数は２０
０kHzから２０ＭHzの範囲が実用的である。図１(b)はバ
イアス電源１９の電圧波形１１１を示す。本発明に従
い，電圧はある適当な間隔でオンオフされる。
(a)はプラズマエッチング装置の全体構成図である。マ
イクロ波電源１１から導波管１２と導入窓１３を介して
真空容器１４内にマイクロ波が導入される。真空容器１
４の材質は金属で内面に絶縁コーティングしてある。導
入窓１３の材質は石英、セラミックなど電磁波を透過す
る物質である。真空容器１４中にはガス導入管１１０か
らガスが導入される。電磁石１５の磁場強度はマイクロ
波の周波数と共鳴を起こすように設定されて、たとえば
周波数が2.45GHzならば磁場強度は875Gaussである。こ
の磁場強度でプラズマ１６中の電子のサイクロトロン運
動が電磁波の周波数と共鳴するために、効率よく電磁波
のエネルギーがプラズマに供給され高密度のプラズマが
できる。試料１７は試料台１８の上に設置される。試料
に入射するイオンを加速するために、バイアス電源１９
が試料台１８に接続されている。バイアス電源の周波数
に特に制限はないが、通常バイアス電源の周波数は２０
０kHzから２０ＭHzの範囲が実用的である。図１(b)はバ
イアス電源１９の電圧波形１１１を示す。本発明に従
い，電圧はある適当な間隔でオンオフされる。
【０００８】この装置で半導体素子のゲートに多く用い
られる酸化膜上の多結晶Si(poly Si)をエッチングした
結果を次に述べる。エッチングのガスにはCl2と堆積性
のガスとして酸素の混合ガスを用いた。真空容器１４内
部の圧力を0.8Paとした。マイクロ波電源１１の出力を
４００Wとした。バイアス電源１０の出力は６０Wで，周
波数は８００KHzとした。オンオフの繰り返し周波数は1
KHzとした。図２はガスとして塩素１８０ｃｃと酸素２
０ｃｃ混合ガスを用い試料をエッチングした場合のpoly
Siエッチ速度（横軸）と酸化膜に対する選択比（縦
軸）の関係を示している。図２中の折れ線２１は、バイ
アス電源を図１(b)に示すように間欠的に制御して、そ
のオンオフの１周期にしめるオンの割合（以後duty比と
呼ぶ）を変化させた場合のデータである。ここでは、du
ty比１００％の時の電力を６０Ｗ一定として、duty比を
小さくした場合はそれに比例して電力が小さくなるよう
に設定してある。つまりduty比が５０％の場合は電力は
６０Ｗの５０％で３０Ｗになる。図中に各点のduty比を
示す。図２中の折れ線２２はバイアス電源を間欠制御せ
ず、連続波形のままその波高値をかえて、電力を６０Ｗ
から２０Ｗまで変えた場合のデータである。図中に各点
の電力を示す。
られる酸化膜上の多結晶Si(poly Si)をエッチングした
結果を次に述べる。エッチングのガスにはCl2と堆積性
のガスとして酸素の混合ガスを用いた。真空容器１４内
部の圧力を0.8Paとした。マイクロ波電源１１の出力を
４００Wとした。バイアス電源１０の出力は６０Wで，周
波数は８００KHzとした。オンオフの繰り返し周波数は1
KHzとした。図２はガスとして塩素１８０ｃｃと酸素２
０ｃｃ混合ガスを用い試料をエッチングした場合のpoly
Siエッチ速度（横軸）と酸化膜に対する選択比（縦
軸）の関係を示している。図２中の折れ線２１は、バイ
アス電源を図１(b)に示すように間欠的に制御して、そ
のオンオフの１周期にしめるオンの割合（以後duty比と
呼ぶ）を変化させた場合のデータである。ここでは、du
ty比１００％の時の電力を６０Ｗ一定として、duty比を
小さくした場合はそれに比例して電力が小さくなるよう
に設定してある。つまりduty比が５０％の場合は電力は
６０Ｗの５０％で３０Ｗになる。図中に各点のduty比を
示す。図２中の折れ線２２はバイアス電源を間欠制御せ
ず、連続波形のままその波高値をかえて、電力を６０Ｗ
から２０Ｗまで変えた場合のデータである。図中に各点
の電力を示す。
【０００９】図２からわかるように、ガス系に塩素と酸
素の混合ガスを用いバイアス電源を間欠的に印加するこ
とによりそのduty比５０％以下の領域では、連続的なバ
イアスと比較しておなじpoly Siエッチ速度にて選択比
が上昇することがわかる。図３は図２の条件からガス種
だけを変えたデータであり、ガスは塩素単体を用いてい
る。この場合は塩素酸素の混合ガスと比較して選択比の
絶対値が小さいことに加えて、バイアス電圧を間欠的に
制御した場合の効果も小さいことがわかる。図２におい
てduty比をさらに下げると選択比はさらに上昇するduty
比５％未満ではpoly Siのエッチ速度が極端に落ちるた
めに実用的なduty比の範囲は５から５０％である。
素の混合ガスを用いバイアス電源を間欠的に印加するこ
とによりそのduty比５０％以下の領域では、連続的なバ
イアスと比較しておなじpoly Siエッチ速度にて選択比
が上昇することがわかる。図３は図２の条件からガス種
だけを変えたデータであり、ガスは塩素単体を用いてい
る。この場合は塩素酸素の混合ガスと比較して選択比の
絶対値が小さいことに加えて、バイアス電圧を間欠的に
制御した場合の効果も小さいことがわかる。図２におい
てduty比をさらに下げると選択比はさらに上昇するduty
比５％未満ではpoly Siのエッチ速度が極端に落ちるた
めに実用的なduty比の範囲は５から５０％である。
【００１０】次に、バイアス電圧の間欠にかかわらず堆
積性を有するガスを混合した場合に間欠制御の効果が上
がる理由を考察する。塩素はpoly Siのエッチングを進
行させるガスで、一方酸素などの堆積性のガスはエッチ
ングを阻害する。特に酸化膜などのエッチ速度が小さい
物質すなわち塩素との反応速度が小さい物質では、少し
でも堆積物があると塩素との反応よりも堆積の方が勝る
のでエッチ速度は極端に落ち、poly Siの対酸化膜選択
比が上昇する。バイアスが印加されていると加速された
イオンが試料表面に入射してエッチング反応を促進す
る。バイアスが連続的だと堆積物が付着すると同時に常
に加速イオンも試料に入射しているので堆積物がスパッ
タされてエッチングを阻害する効果が低くなる。一方、
バイアス電圧を間欠的に印加するとバイアスオフの期間
ではイオンは加速されず、従って堆積物の付着が効率的
に生じて選択比を高める効果が顕著になる。あまりオフ
期間が長くなると酸化膜のみならずpoly Siのエッチン
グも阻害されて実用的ではなくなるので、加速されたイ
オンの入射期間すなわちduty比に最適値が存在する。従
来例では堆積ガスの効果は述べられていない。また先の
考察自体も従来にない考え方で、従ってこの発明は従来
例からは容易類推は不可能であり、我々の実験により初
めて見いだされたものである。
積性を有するガスを混合した場合に間欠制御の効果が上
がる理由を考察する。塩素はpoly Siのエッチングを進
行させるガスで、一方酸素などの堆積性のガスはエッチ
ングを阻害する。特に酸化膜などのエッチ速度が小さい
物質すなわち塩素との反応速度が小さい物質では、少し
でも堆積物があると塩素との反応よりも堆積の方が勝る
のでエッチ速度は極端に落ち、poly Siの対酸化膜選択
比が上昇する。バイアスが印加されていると加速された
イオンが試料表面に入射してエッチング反応を促進す
る。バイアスが連続的だと堆積物が付着すると同時に常
に加速イオンも試料に入射しているので堆積物がスパッ
タされてエッチングを阻害する効果が低くなる。一方、
バイアス電圧を間欠的に印加するとバイアスオフの期間
ではイオンは加速されず、従って堆積物の付着が効率的
に生じて選択比を高める効果が顕著になる。あまりオフ
期間が長くなると酸化膜のみならずpoly Siのエッチン
グも阻害されて実用的ではなくなるので、加速されたイ
オンの入射期間すなわちduty比に最適値が存在する。従
来例では堆積ガスの効果は述べられていない。また先の
考察自体も従来にない考え方で、従ってこの発明は従来
例からは容易類推は不可能であり、我々の実験により初
めて見いだされたものである。
【００１１】（実施例２）図４は本発明を適用する別の
装置構造で、この装置では数百kHzから数十MHzのいわい
るラジオ波帯（以後rfと呼ぶ）の周波数で誘導結合によ
りプラズマを発生させる。真空容器４３はアルミナや石
英などの電磁波を透過する物質でつくられている。その
回りに、プラズマ４１０を発生させるための電磁コイル
４２が巻いてある。コイルにはrf電源４４が接続されて
いる。真空容器４１内には試料台４８がありその上に試
料４７がおかれ、試料台にはバイアス電源４９が接続さ
れている。真空容器４１には上蓋４５がついているがこ
れは一体型でもかまわない。
装置構造で、この装置では数百kHzから数十MHzのいわい
るラジオ波帯（以後rfと呼ぶ）の周波数で誘導結合によ
りプラズマを発生させる。真空容器４３はアルミナや石
英などの電磁波を透過する物質でつくられている。その
回りに、プラズマ４１０を発生させるための電磁コイル
４２が巻いてある。コイルにはrf電源４４が接続されて
いる。真空容器４１内には試料台４８がありその上に試
料４７がおかれ、試料台にはバイアス電源４９が接続さ
れている。真空容器４１には上蓋４５がついているがこ
れは一体型でもかまわない。
【００１２】本発明に従い、バイアス電源４９は間欠的
に制御して、エッチングガスには塩素と堆積性のガスと
して窒素の混合ガスを用いた。窒素も半導体表面を窒化
することでエッチングを阻害し、酸素と同様な働きをす
る。エッチングはrf電源４４の周波数を2MHzとしてバイ
アス電源４９の周波数を13.56MHzとしたガスは塩素150c
cと窒素50ccを混合し圧力は0.8Paとした。この実施例で
も図２と図３に示すデータと同じ傾向が得られ、本発明
の有用性がわかった。
に制御して、エッチングガスには塩素と堆積性のガスと
して窒素の混合ガスを用いた。窒素も半導体表面を窒化
することでエッチングを阻害し、酸素と同様な働きをす
る。エッチングはrf電源４４の周波数を2MHzとしてバイ
アス電源４９の周波数を13.56MHzとしたガスは塩素150c
cと窒素50ccを混合し圧力は0.8Paとした。この実施例で
も図２と図３に示すデータと同じ傾向が得られ、本発明
の有用性がわかった。
【００１３】図４に示す装置では、電磁コイル４２は上
蓋４５の上に設置されていても効果は同じである。
蓋４５の上に設置されていても効果は同じである。
【００１４】（実施例３）図５は本発明を適用する別の
装置構造で、この装置ではrf周波数の容量結合によりプ
ラズマを発生させる。真空容器５１内には２枚の電極５
２、５５が平行に配置してある。電極にはそれぞれrf電
源５３とバイアス電源５６が接続してある。試料５４は
試料台をかねる電極５５の上におかれる。ガスは試料と
対向した電極５２に開いた穴から導入管５８を通して容
器内に入れられる。プラズマ５７は２枚の電極の間で発
生する。
装置構造で、この装置ではrf周波数の容量結合によりプ
ラズマを発生させる。真空容器５１内には２枚の電極５
２、５５が平行に配置してある。電極にはそれぞれrf電
源５３とバイアス電源５６が接続してある。試料５４は
試料台をかねる電極５５の上におかれる。ガスは試料と
対向した電極５２に開いた穴から導入管５８を通して容
器内に入れられる。プラズマ５７は２枚の電極の間で発
生する。
【００１５】このタイプの装置でもバイアス電源５６を
間欠的に制御してガスとして塩素と堆積性のガスを混合
することにより、先の実施例と同じ効果が得られる。
間欠的に制御してガスとして塩素と堆積性のガスを混合
することにより、先の実施例と同じ効果が得られる。
【００１６】堆積性のガスとしては先に述べた酸素と窒
素に加えて、CO,CO2,NH3などの酸素と窒素を含むガスで
も同様な効果がある。またそれ以外にCH3,CH2F2などの
炭素を含むガスを堆積性が強く同様な効果を発揮する。
素に加えて、CO,CO2,NH3などの酸素と窒素を含むガスで
も同様な効果がある。またそれ以外にCH3,CH2F2などの
炭素を含むガスを堆積性が強く同様な効果を発揮する。
【００１７】また、エッチングを促進するハロゲンガス
は塩素のほかにF2,HBr,HIあるいは塩素を含むこれらの
ハロゲンガスの混合でも効果は同じである。またこれら
堆積性ガスの混合率は0.5から50%が適当な範囲である、
すなわち混合率が小さすぎると効果がなくなり、多すぎ
るとエッチングが進行しなくなる。
は塩素のほかにF2,HBr,HIあるいは塩素を含むこれらの
ハロゲンガスの混合でも効果は同じである。またこれら
堆積性ガスの混合率は0.5から50%が適当な範囲である、
すなわち混合率が小さすぎると効果がなくなり、多すぎ
るとエッチングが進行しなくなる。
【００１８】さらに以上述べたガス系に濃度やプラズマ
安定性を変える目的でAr,Heなどの希ガスを混合しても
本発明の効果を損なうものではない。
安定性を変える目的でAr,Heなどの希ガスを混合しても
本発明の効果を損なうものではない。
【００１９】
【発明の効果】以上のように本発明により、poly Siな
どの半導体を酸化膜などの絶縁物に対して高い選択比で
エッチングできる。
どの半導体を酸化膜などの絶縁物に対して高い選択比で
エッチングできる。
【図１】本発明を適用する装置の全体構成図。
【図２】poly Siのエッチ速度と対酸化膜選択比の関係
を示す図。
を示す図。
【図３】poly Siのエッチ速度と対酸化膜選択比の関係
を示す図。
を示す図。
【図４】本発明を適用する装置の全体構成を示す図。
【図５】本発明を適用する装置の全体構成を示す図。
11…マイクロ波電源、12…導波管、13…導入窓、14,43,
51…真空容器、15…磁石、16,410,57…プラズマ、17,4
7,54…試料、18,48…試料台、19,49,56…バイアス電
源、110,58-ガス導入管、111…電圧波形、21,22,31,32
…折れ線、42…電磁コイル、44,53…ｒｆ電源、45…上
蓋、52,55…電極。
51…真空容器、15…磁石、16,410,57…プラズマ、17,4
7,54…試料、18,48…試料台、19,49,56…バイアス電
源、110,58-ガス導入管、111…電圧波形、21,22,31,32
…折れ線、42…電磁コイル、44,53…ｒｆ電源、45…上
蓋、52,55…電極。
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中宇称 功一 山口県下松市大字東豊井794番地 株式会 社日立製作所笠戸工場内 (72)発明者 水谷 巽 山口県下松市大字東豊井794番地 株式会 社日立製作所笠戸工場内 (72)発明者 後藤 康 東京都国分寺市東恋ヶ窪一丁目280番地 株式会社日立製作所中央研究所内
Claims (11)
- 【請求項１】真空容器とその中にプラズマを発生させる
手段および該プラズマにより表面処理される試料を設置
する試料台と試料にバイアスを印加するための電源から
なる表面処理装置において、該真空容器中にハロゲンガ
スと堆積性ガスの混合ガスを導入しかつ、試料台に印加
するバイアスを間欠的にオンとオフに制御したことを特
徴とする表面処理装置。 - 【請求項２】請求項１のハロゲンに混合する堆積性カ゛ス
はO2であることを特徴とする表面処理装置。 - 【請求項３】請求項１のハロゲンに混合する堆積性カ゛ス
は酸素原子を含むカ゛スであることを特徴とする表面処理
装置。 - 【請求項４】請求項１のハロゲンに混合する堆積性カ゛ス
はN2であることを特徴とする表面処理装置。 - 【請求項５】請求項１のハロゲンに混合する堆積性カ゛ス
は窒素原子を含むカ゛スであることを特徴とする表面処理
装置。 - 【請求項６】請求項１のハロゲンに混合する堆積性カ゛ス
は炭素原子を含むカ゛スであることを特徴とする表面処理
装置。 - 【請求項７】請求項１から６のいずれかに記載のハロゲ
ンガスは塩素であることを特徴とする表面処理装置。 - 【請求項８】請求項１から６のいずれかに記載のハロゲ
ンガスはF2,HBr,HIであることを特徴とする表面処理装
置。 - 【請求項９】請求項１から８のいずれかの試料に印加す
るバイアス電源の周波数は200KHzから20MHzの高周波で
あることを特徴とする表面処理方法。 - 【請求項１０】請求項１から９のいずれかの試料に印加
するバイアス電源を間欠的にする表面処理する方法は、
バイアスのオン-オフの１周期にしめるオンの割合が５
から５０％にしたことを特徴とする表面処理方法。 - 【請求項１１】請求項１から１０のいずれかに記載のハ
ロゲンに混合する堆積性カ゛スの混合率は0.5から50%であ
ることを特徴とする表面処理装置。
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|---|---|---|---|
| JP6609497A JPH10261620A (ja) | 1997-03-19 | 1997-03-19 | 表面処理装置 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6609497A JPH10261620A (ja) | 1997-03-19 | 1997-03-19 | 表面処理装置 |
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ID=13305951
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