JPH10270323A - Projection aligner - Google Patents
Projection alignerInfo
- Publication number
- JPH10270323A JPH10270323A JP9073378A JP7337897A JPH10270323A JP H10270323 A JPH10270323 A JP H10270323A JP 9073378 A JP9073378 A JP 9073378A JP 7337897 A JP7337897 A JP 7337897A JP H10270323 A JPH10270323 A JP H10270323A
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- lens
- projection
- heating
- exposure apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 69
- 238000010438 heat treatment Methods 0.000 claims abstract description 40
- 238000005286 illumination Methods 0.000 claims abstract description 21
- 230000007246 mechanism Effects 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010436 fluorite Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体大規模集積回
路（ＬＳＩ）や液晶表示装置等の製造で使用される投影
露光装置に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a projection exposure apparatus used for manufacturing a semiconductor large-scale integrated circuit (LSI) or a liquid crystal display device.
【０００２】[0002]
【従来の技術】ＬＳＩの高集積化に伴い、回路パターン
の微細化が急速に進展しているが、投影露光装置を用い
た光リソグラフィ技術には、光源の波長に起因する解像
限界が存在する。この光リソグラフィの解像力を向上さ
せる最も直接的な方法は、光源の波長を短くすることで
ある。現在、量産工場では高圧水銀灯のｉ線（波長３６
５ｎｍ）を光源とした投影露光装置が線幅０．３５μｍ
ルールのＬＳＩ製造に使用されている。次世代の線幅
０．２５μｍルールのＬＳＩ製造には、より短い波長の
ＫｒＦエキシマレーザ（波長２４８ｎｍ）を光源とする
投影露光装置が必要となる。このため、ＫｒＦエキシマ
レーザ投影露光装置を用いてＬＳＩの小規模試作が進め
られている。2. Description of the Related Art Circuit patterns have been miniaturized rapidly with the increase in integration of LSIs. However, optical lithography using a projection exposure apparatus has a resolution limit due to the wavelength of a light source. I do. The most direct way to improve the resolution of this photolithography is to shorten the wavelength of the light source. At present, mass production plants use i-line (wavelength 36
5 nm) as a light source and a line width of 0.35 μm
Used in rule LSI manufacturing. In order to manufacture the next-generation LSI with a 0.25 μm line width rule, a projection exposure apparatus using a shorter wavelength KrF excimer laser (wavelength: 248 nm) as a light source is required. For this reason, small-scale prototypes of LSIs are being developed using a KrF excimer laser projection exposure apparatus.
【０００３】さらに、次の世代のＬＳＩの線幅は０．１
８μｍとなり、ＫｒＦエキシマレーザ投影露光装置では
解像困難である。そこで、より波長の短いＡｒＦエキシ
マレーザ（波長１９３ｎｍ）を用いたリソグラフィ技術
が活発に開発されている。このＡｒＦエキシマレーザの
ように短波長の光を透過する光学材料は数少なく、実用
的なものとしては、合成石英（ＳｉＯ２）および蛍石
（ＣａＦ２）の２種類しかない。また、短波長の光は光
子エネルギが大きくなるため、光学材料に大きなダメー
ジを与える。このため、投影露光装置の寿命が短いとい
う問題がある。Further, the line width of the next generation LSI is 0.1
8 μm, which makes resolution difficult with a KrF excimer laser projection exposure apparatus. Therefore, a lithography technique using an ArF excimer laser (wavelength 193 nm) having a shorter wavelength is being actively developed. There are few optical materials that transmit short-wavelength light, such as the ArF excimer laser, and there are only two practical materials, synthetic quartz (SiO2) and fluorite (CaF2). In addition, short-wavelength light has a large photon energy, and thus causes significant damage to optical materials. For this reason, there is a problem that the life of the projection exposure apparatus is short.
【０００４】この光学材料へのダメージを低減する方法
として、光学材料の品質改良が進められている。光学材
料中の不純物を除去する品質改良により一定限度までは
低ダメージ化が可能であるが、最終的に光学材料自身の
化学結合を切断することにより生じるダメージが残って
しまう。この化学結合は１光子のエネルギより大きいた
め、１光子では切断されないが、２光子が同時に吸収さ
れると切断されてしまう。この２光子吸収により生じる
欠陥にはカラーセンタやコンパクションと呼ばれるもの
がある。[0004] As a method of reducing the damage to the optical material, quality improvement of the optical material has been promoted. Although the damage can be reduced to a certain limit by improving the quality by removing impurities in the optical material, damage caused by finally breaking the chemical bond of the optical material itself remains. Since this chemical bond is larger than the energy of one photon, it is not broken by one photon, but is broken when two photons are simultaneously absorbed. Defects caused by the two-photon absorption include those called color centers and compactions.
【０００５】この２光子吸収の生じる確率は、２光子が
同一箇所に同時に存在する確率に比例する。この確率は
照射露光量の二乗に比例し、ＡｒＦエキシマレーザのパ
ルス幅の二乗に反比例する。そのため、照射露光量を減
らすかパルス幅を伸ばすと光学材料へのダメージを大幅
に低減することができる。現在、照射露光量を減らすた
めの高感度フォトレジストの開発、およびパルス幅を伸
ばすためのビームエクスパンダーの開発が進められてい
る。[0005] The probability of occurrence of this two-photon absorption is proportional to the probability that two photons are simultaneously present at the same location. This probability is proportional to the square of the irradiation dose and inversely proportional to the square of the pulse width of the ArF excimer laser. Therefore, when the irradiation exposure amount is reduced or the pulse width is increased, damage to the optical material can be significantly reduced. At present, development of a high-sensitivity photoresist for reducing the amount of irradiation exposure and development of a beam expander for extending a pulse width are being advanced.
【０００６】２光子吸収により生じた欠陥は、光学材料
を高温加熱することにより修復することが知られてい
る。例えば「フィジカ ステタス リソディ」（Ｐｈｙ
ｓｉｃａ Ｓｔａｔｕｓ Ｓｏｌｉｄｉ） ３２巻
（１９６９年） ８３１〜８３７頁には、高速電子ビー
ム照射や中性子線照射で発生したＭｇＦ２のカラーセン
タが８００°Ｋ以上の高温加熱で消失することを報告し
ている。これは、高温加熱により切断された化学結合が
再結合するためである。合成石英や蛍石の場合でも同様
に高温加熱により欠陥を修復することが可能である。It is known that a defect caused by two-photon absorption is repaired by heating an optical material at a high temperature. For example, "Physica Status Lisody" (Phy
sica Status Solidi) 32 volumes
(1969) pages 831 to 837 report that the color center of MgF2 generated by high-speed electron beam irradiation or neutron beam irradiation disappears at a high temperature of 800K or more. This is because the chemical bonds cut by high-temperature heating are recombined. In the case of synthetic quartz or fluorite as well, it is possible to repair defects by high-temperature heating.
【０００７】図３は一般の投影露光装置の投影光学系の
断面図である。一般に、投影露光装置には投影光学系の
他に照明光学系、アライメント用光学系等も必要である
が、これらは図３では省略してある図において、照明光
学系からの光レチクル・ステージ１上に、被露光パター
ン１０をもつレチクル２が載置され、レンズホルダ３に
は投影光学系のレンズ４１〜４３が装着され、ウエハス
テージ６上に露光対象のウエハ５が設けられている。照
明光学系からの照射光は、レチクル２を介して投影光学
系のレンズ４１〜４３を通ってウエハ５を露光する構成
となっている。このように通常の投影光学系において
は、光学材料を加熱する手段が設けられていなかった。FIG. 3 is a sectional view of a projection optical system of a general projection exposure apparatus. In general, a projection exposure apparatus requires an illumination optical system, an alignment optical system, and the like in addition to the projection optical system. These are not shown in FIG. A reticle 2 having a pattern to be exposed 10 is mounted thereon, lenses 41 to 43 of a projection optical system are mounted on a lens holder 3, and a wafer 5 to be exposed is provided on a wafer stage 6. Irradiation light from the illumination optical system is configured to expose the wafer 5 through the reticle 2 and lenses 41 to 43 of the projection optical system. As described above, the ordinary projection optical system has no means for heating the optical material.
【０００８】[0008]
【発明が解決しようとする課題】従来の投影露光装置で
は、通常レンズ４１〜４３がレンズホルダ３に組み付け
られている。このレンズ４１〜４３を加熱するためにレ
ンズホルダ３からレンズを取外すと、光学系の再調整に
非常に長い時間がかかったり、レンズホルダ３全体を加
熱するためにレンズホルダ３を投影露光装置から外して
も、レンズホルダ３の再設置の際に光軸調整等に長時間
かかるという問題があった。In a conventional projection exposure apparatus, lenses 41 to 43 are usually assembled to a lens holder 3. If the lens is removed from the lens holder 3 to heat the lenses 41 to 43, it takes a very long time to readjust the optical system, or the lens holder 3 is moved from the projection exposure apparatus to heat the entire lens holder 3. Even if the lens holder 3 is removed, it takes a long time to adjust the optical axis when the lens holder 3 is reinstalled.
【０００９】本発明の目的は、レンズを外すことなく簡
易な構成でレンズを加熱可能な投影露光装置を提供する
ことにある。An object of the present invention is to provide a projection exposure apparatus capable of heating a lens with a simple configuration without removing the lens.
【００１０】[0010]
【課題を解決するための手段】本発明の構成は、被露光
パターンを有するレチクルと、このレチクルを照射する
照明光学系と、この照明光学系から照射された前記レチ
クル上のパターンをウエハ上に結像させる投影光学系と
を有する投影露光装置において、前記照明光学系あるい
は前記投影光学系を加熱する加熱手段を備えることを特
徴とする。According to the present invention, there is provided a reticle having a pattern to be exposed, an illumination optical system for irradiating the reticle, and a pattern on the reticle irradiated from the illumination optical system on a wafer. In a projection exposure apparatus having a projection optical system for forming an image, a heating unit for heating the illumination optical system or the projection optical system is provided.
【００１１】本発明において、加熱手段は、照明光学系
あるいは投影光学系の外部に移動可能な加熱装置を設
け、露光時には前記加熱装置を前記照明光学系あるいは
投影光学系の露光光通過領域から移動させ、加熱時には
前記加熱装置を前記照明光学系あるいは前記投影光学系
中のレンズに接触させるように配置させ、また加熱手段
は、照明光学系あるいは投影光学系中のレンズホルダ内
部に加熱機構を設けたものとすることができる。In the present invention, the heating means includes a heating device movable outside the illumination optical system or the projection optical system, and moves the heating device from an exposure light passage area of the illumination optical system or the projection optical system during exposure. During heating, the heating device is arranged to be in contact with the lens in the illumination optical system or the projection optical system, and the heating means is provided with a heating mechanism inside a lens holder in the illumination optical system or the projection optical system. It can be.
【００１２】[0012]
【発明の実施の形態】本発明の実施の形態について図面
を参照にして詳細に説明する。図１は本発明の第１の実
施の形態の投影露光装置の投影光学系の断面図である。
一般に、投影露光装置には投影光学系の他に照明光学
系、アライメント用光学系等も必要であるが、それらは
図１では省略してある。図１において、１はレチクル・
ステージ、２はレチクル、３はレンズホルダ、４１〜４
３はレンズ、５はウエハ、６はウエハステージである。
図３の通常の投影光学系と異なる所は、レンズ加熱器７
がレンズホルダ３の下部に取り付けられている点であ
る。Embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a sectional view of a projection optical system of a projection exposure apparatus according to a first embodiment of the present invention.
Generally, a projection exposure apparatus requires an illumination optical system, an alignment optical system, and the like in addition to the projection optical system, but these are omitted in FIG. In FIG. 1, 1 is a reticle
Stage, 2 is a reticle, 3 is a lens holder, 41 to 4
Reference numeral 3 denotes a lens, 5 denotes a wafer, and 6 denotes a wafer stage.
The difference from the ordinary projection optical system of FIG.
Is attached to the lower part of the lens holder 3.
【００１３】このレンズ加熱器７は、モータ等により上
下左右に駆動可能となっており、露光時にはレンズホル
ダ３の下には置かれないように配置されている。このレ
ンズ加熱器７は、レンズ４１〜４３を一定温度（３００
℃）以上に加熱できるヒータと、その制御回路とから構
成される。通常、制御回路は温度センサを用いて所定温
度範囲となるように制御されるが、ヒータの周辺部分に
危険がない程度にヒータのみで加熱される場合には制御
回路を不要することもできる。The lens heater 7 can be driven up, down, left and right by a motor or the like, and is arranged so as not to be placed under the lens holder 3 during exposure. The lens heater 7 heats the lenses 41 to 43 at a constant temperature (300
(° C.) or higher, and a control circuit for the heater. Normally, the control circuit is controlled using a temperature sensor so as to be in a predetermined temperature range. However, when the peripheral portion of the heater is heated only by the heater to such an extent that there is no danger, the control circuit may be unnecessary.
【００１４】レンズ中の欠陥を高温加熱により修復する
ためには、社内実験データによると、レンズ４３を３０
０℃以上まで加熱する必要がある。しかし、投影露光装
置は、通常運転中は２０℃程度の常温に保たれているた
め、一旦加熱すると常温に戻るまで時間がかかる。レン
ズ加熱は年に数度のメンテナンス時間に行い、その際レ
ンズ加熱器７は、投影光学系の最下部のレンズ４３に密
着するように移動される。In order to repair defects in the lens by heating at a high temperature, according to in-house experimental data, it is
It is necessary to heat to above 0 ° C. However, since the projection exposure apparatus is kept at a normal temperature of about 20 ° C. during normal operation, once heated, it takes time to return to the normal temperature. The lens heating is performed at a maintenance time several times a year, at which time the lens heater 7 is moved so as to be in close contact with the lowermost lens 43 of the projection optical system.
【００１５】なお、このレンズ４３を加熱する際に投影
光学系の雰囲気中に酸素が存在するとレンズ表面の反射
防止膜が酸化され劣化を生じる。このような劣化を防ぐ
ためには投影光学系の雰囲気を窒素等で置換しておくこ
とが望ましい。When oxygen is present in the atmosphere of the projection optical system when the lens 43 is heated, the antireflection film on the lens surface is oxidized and deteriorated. In order to prevent such deterioration, it is desirable to replace the atmosphere of the projection optical system with nitrogen or the like.
【００１６】また、本実施形態では、最下部のレンズ４
３のみが加熱されるように設計されている。この投影光
学系の倍率は通常１／５から１／４と縮小系であるの
で、最下部のレンズ４３を透過する光量が単位面積当た
りでは最も高くなるため、最下部のレンズ４３が最もダ
メージを受けやすい。従って、レンズ加熱器７を最下部
のレンズ４３に密着させることにより効率良く最下部の
レンズ４３を加熱することができる。In the present embodiment, the lowermost lens 4
Only three are designed to be heated. Since the magnification of this projection optical system is usually a reduction system of 1/5 to 1/4, the amount of light transmitted through the lowermost lens 43 is the highest per unit area, so that the lowermost lens 43 is most damaged. Easy to receive. Therefore, by bringing the lens heater 7 into close contact with the lowermost lens 43, the lowermost lens 43 can be efficiently heated.
【００１７】図２は本発明の第２の実施の形態の投影露
光装置の投影光学系の断面図である。本実施形態では、
加熱機構付きレンズホルダ８によりレンズ４１〜４３全
てを同時に加熱可能とした点である。この加熱機構付き
レンズホルダ８とレンズ４１〜４３の接触面積は小さい
ため加熱の効率は悪いが、レンズ全てを同時に加熱出来
るという利点がある。FIG. 2 is a sectional view of a projection optical system of a projection exposure apparatus according to a second embodiment of the present invention. In this embodiment,
The point is that all the lenses 41 to 43 can be heated simultaneously by the lens holder 8 with a heating mechanism. Since the contact area between the lens holder 8 with the heating mechanism and the lenses 41 to 43 is small, the efficiency of heating is low, but there is an advantage that all the lenses can be heated simultaneously.
【００１８】なお、本実施形態では投影光学系中のレン
ズを加熱する機構について述べたが、同様の機構を照明
光学系中のレンズ加熱にも適用することができる。ま
た、露光光源もＡｒＦエキシマレーザ光に限らずＫｒＦ
エキシマレーザ光、Ｆ２エキシマレーザ光など光学材料
にダメージを引き起こす光源全ての場合に適用すること
ができる。In this embodiment, the mechanism for heating the lens in the projection optical system has been described. However, the same mechanism can be applied to heating the lens in the illumination optical system. Also, the exposure light source is not limited to the ArF excimer laser light, but may be KrF
The present invention can be applied to all light sources that cause damage to optical materials, such as excimer laser light and F2 excimer laser light.
【００１９】[0019]
【発明の効果】以上説明したように本発明の投影露光装
置によれば、露光により生じたレンズのダメージを、レ
ンズを投影露光装置内から取り出すことなく高温加熱手
段により加熱して回復させることができるので、投影露
光装置の長寿命化が計れると共に、ひいては投影露光装
置を用いて製造されるＬＳＩの価格を低減することがで
きる。また、投影露光装置内部からレンズを取り出す必
要が無いため、レンズ再組み付けが不要になり、短いメ
ンテナンス時間でレンズダメージを回復させることがで
きる。As described above, according to the projection exposure apparatus of the present invention, damage to the lens caused by exposure can be recovered by heating the lens by the high-temperature heating means without taking the lens out of the projection exposure apparatus. Therefore, the life of the projection exposure apparatus can be extended, and the price of an LSI manufactured using the projection exposure apparatus can be reduced. Further, since it is not necessary to take out the lens from the inside of the projection exposure apparatus, it is not necessary to reassemble the lens, and it is possible to recover the lens damage in a short maintenance time.
【図１】本発明の第１の実施の投影露光装置の投影光学
系を示す断面図。FIG. 1 is a sectional view showing a projection optical system of a projection exposure apparatus according to a first embodiment of the present invention.
【図２】本発明の第２の実施形態の投影光学系を示す断
面図。FIG. 2 is a sectional view showing a projection optical system according to a second embodiment of the present invention.
【図３】従来の投影露光装置の投影光学系を示す断面
図。FIG. 3 is a sectional view showing a projection optical system of a conventional projection exposure apparatus.
１ レチクルステージ ２ レチクル ３ レンズホルダ ５ ウエハ ６ ウエハステージ ７ レンズ加熱器 ８ 加熱機構付きレンズホルダ １０ 露光パターン ４１〜４３ レンズ Reference Signs List 1 reticle stage 2 reticle 3 lens holder 5 wafer 6 wafer stage 7 lens heater 8 lens holder with heating mechanism 10 exposure pattern 41-43 lens
Claims (5)
のレチクルを照射する照明光学系と、この照明光学系か
ら照射された前記レチクル上のパターンをウエハ上に結
像させる投影光学系とを有する投影露光装置において、
前記照明光学系あるいは前記投影光学系を加熱する加熱
手段を備えることを特徴とする投影露光装置。1. A projection system comprising: a reticle having a pattern to be exposed; an illumination optical system for irradiating the reticle; and a projection optical system for imaging a pattern on the reticle emitted from the illumination optical system on a wafer. In an exposure apparatus,
A projection exposure apparatus comprising heating means for heating the illumination optical system or the projection optical system.
学系の外部に移動可能な加熱装置を設け、露光時には前
記加熱装置を前記照明光学系あるいは投影光学系の露光
光通過領域から移動させ、加熱時には前記加熱装置を前
記照明光学系あるいは前記投影光学系中のレンズに接触
させるように配置させる請求項１記載の投影露光装置。2. The heating means includes a heating device movable outside the illumination optical system or the projection optical system, and moves the heating device from an exposure light passage area of the illumination optical system or the projection optical system during exposure. 2. The projection exposure apparatus according to claim 1, wherein the heating device is arranged so as to be in contact with the illumination optical system or a lens in the projection optical system during heating.
学系のレンズのみを加熱するものである請求項２記載の
投影露光装置。3. The projection exposure apparatus according to claim 2, wherein the heating means heats only a lens of the projection optical system closest to the wafer side.
学系中のレンズホルダ内部に設けられた加熱機構を有す
る請求項１記載の投影露光装置。4. The projection exposure apparatus according to claim 1, wherein the heating means has a heating mechanism provided inside a lens holder in the illumination optical system or the projection optical system.
熱するものである請求項２，３または４記載の投影露光
装置。5. The projection exposure apparatus according to claim 2, wherein the heating means heats the lens to 300 ° C. or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9073378A JP3006532B2 (en) | 1997-03-26 | 1997-03-26 | Projection exposure equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9073378A JP3006532B2 (en) | 1997-03-26 | 1997-03-26 | Projection exposure equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10270323A true JPH10270323A (en) | 1998-10-09 |
| JP3006532B2 JP3006532B2 (en) | 2000-02-07 |
Family
ID=13516474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9073378A Expired - Fee Related JP3006532B2 (en) | 1997-03-26 | 1997-03-26 | Projection exposure equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3006532B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008277822A (en) * | 2007-05-04 | 2008-11-13 | Asml Holding Nv | Lithographic apparatus |
| JP2012134494A (en) * | 2010-12-23 | 2012-07-12 | Asml Netherlands Bv | Lithographic apparatus and method of modifying radiation beam in lithographic apparatus |
-
1997
- 1997-03-26 JP JP9073378A patent/JP3006532B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008277822A (en) * | 2007-05-04 | 2008-11-13 | Asml Holding Nv | Lithographic apparatus |
| JP2012134494A (en) * | 2010-12-23 | 2012-07-12 | Asml Netherlands Bv | Lithographic apparatus and method of modifying radiation beam in lithographic apparatus |
| US9146477B2 (en) | 2010-12-23 | 2015-09-29 | Asml Netherlands B.V. | Lithographic apparatus and method of modifying a beam of radiation within a lithographic apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3006532B2 (en) | 2000-02-07 |
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