JPH10270475A - Pressure contact type semiconductor device - Google Patents

Abstract

(57) [Problem] To provide a press-contact type semiconductor device which can surely commutate a main current to a gate circuit and can be easily attached to a gate driver. SOLUTION: A gate driver GD1 is mounted on a cathode stack electrode SK1 with a GCT thyristor 100 inserted in a thyristor insertion section 9. And G
An insulating cylindrical body (gate terminal plate pressing means) 50 is provided so as to surround the CT thyristor 100.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure contact type semiconductor device, and more particularly to a gate commutation type turn-off thyristor (GC).
T).

[0002]

2. Description of the Related Art A gate commutation type turn-off thyristor (hereinafter, referred to as a GCT thyristor) is different from a gate turn-off thyristor (hereinafter, referred to as a GTO) in that the rate of increase of a gate reverse current is increased to about 100 times that of a GTO thyristor.
The turn-off operation is performed by flowing (commutating) all the main current to the gate circuit.

FIGS. 8 and 9 show a GCT thyristor 90.
1 shows a cross-sectional configuration and a planar configuration of FIG. 8 is the same as FIG.
FIG. 5 is a front view of the GCT thyristor 90 viewed from the direction of the arrow shown in FIG. Accordingly, FIG. 8 is a longitudinal sectional view taken along the line AA in FIG.

In FIG. 8, a gate electrode 29a is formed on a surface located on the outer peripheral side of the lower surface of the semiconductor substrate 28 on which each segment of the GCT thyristor 90 is formed. On the lower surface of the inner semiconductor substrate 28, each cathode electrode 29b is formed corresponding to the position of each segment.

Under the cathode electrode 29b on the lower surface of the semiconductor substrate 28, a cathode strain buffer plate 30 and a cathode post electrode 31 are sequentially arranged. On the other hand, an anode distortion buffer plate 32 is provided on the surface of the anode electrode (not shown) of the semiconductor substrate 28 (the surface opposite to the cathode electrode 29b).
And an anode post electrode 33 are sequentially arranged.

The gate electrode 29a of the semiconductor substrate 28
A ring-shaped gate electrode 34 is disposed so as to be in contact with the surface of the gate terminal plate 38 made of a ring-shaped metal plate.
However, it is arranged in contact with the inner peripheral edge surface of the ring gate electrode 34 so that the inner peripheral edge surface can slide with the electrode 34.

Along with the gate terminal plate 38, a ring-shaped elastic body 35 such as a disc spring or a wave spring for pressing the ring-shaped gate electrode 34 against the gate electrode 29a is provided. The elastic body 35 presses the gate terminal plate 38 via the ring-shaped insulator 36.

An insulator 37 made of an insulating sheet or the like for insulating the ring-shaped gate electrode 34 from the cathode strain buffer plate 30 and the cathode post electrode 31 extends along the wall surfaces of the cathode strain buffer plate 30 and the cathode post electrode 31. It is arranged.

A cathode flange 26 is fixed to the edge of the cathode post electrode 31, and an anode post electrode 33
Has an anode flange 40 fixed thereto. And
Between the cathode flange 26 and the anode flange 40, so as to surround the main part of the GCT thyristor 90,
An insulating cylinder 41 made of an insulating material such as ceramic is provided. The insulating cylinder 41 has a configuration in which the insulating cylinder 41 is divided vertically with the gate terminal plate 38 interposed therebetween, and has a protrusion 42 for increasing the creepage distance. Therefore, the outer peripheral side portion of the gate terminal plate 38 projects outside from the side surface of the insulating cylinder 41. The insulating cylinder 41 is provided on the gate terminal plate 38.
It is air-tightly fixed to the upper and lower surfaces.

A connecting plate 43a fixed to the lower end face of the insulating cylinder 41 is airtightly fixed to the cathode flange 26, and a connecting plate 43b fixed to the upper end face of the insulating cylinder 41 is airtightly fixed to the anode flange 40. As a result, the GCT thyristor 90 has a sealed package structure. The interior is replaced with an inert gas.

Further, a plurality of mounting holes 21 are provided at predetermined intervals in an edge portion of the gate terminal plate 38. As shown in FIG. 9, the appearance of the GCT thyristor 90 has a disk shape, and the cathode post electrode 31, the cathode flange 26, and the gate terminal plate 38 are arranged concentrically in this order.

FIG. 10 is an external view of a gate driver GD for generating a gate turn-on control current between the gate and the cathode of the GCT thyristor. FIG.
2 shows a cross-sectional view of a state where the GCT thyristor 90 is attached to the gate driver GD.

In FIG. 10 and FIG. 11, the gate driver circuit 15 and the G
A connection substrate 70 on which a circuit pattern is formed for electrically connecting to the CT thyristor 90 extends.

In FIG. 10, a connection board 70 has a GCT
A screw hole 21A for fixing the gate terminal plate 38 of the GCT thyristor 90 is provided together with the thyristor insertion portion 71 for inserting the thyristor 90. The GCT thyristor 90 is inserted into the thyristor insertion portion 71 such that the cathode post electrode 31 faces down, and the gate terminal plate 38
The mounting hole 21 and the screw hole 21A are aligned with each other, and are fixed by screws.

FIG. 11 is a diagram schematically showing a state in which the GCT thyristor 90 is mounted on the gate driver GD. FIG. 11 is a longitudinal sectional view taken along line BB in FIG. In FIG. 11, only the configuration of the connection substrate 70 is shown as a cross-sectional view.

In FIG. 11, the connection board 70 has a gate lead board 72, a cathode lead board 73, and an insulator 74 for insulating the two boards 72 and 73 from each other. The reason why such a multilayer substrate structure is provided is to reduce the internal inductance of the gate driver circuit unit 15.
The cathode lead substrate 73 and the gate lead substrate 72 serve as a transmission path of a gate turn-on control current.

The cathode post electrode 31 and the anode post electrode 33 are urged to face each other in a direction facing each other to press the cathode strain buffer plate 30 and the anode strain buffer plate 32 against the semiconductor substrate 28. A stack electrode SK and an anode stack SA are arranged.

As described above, the GCT thyristor 90 is
It has a ring-shaped or disk-shaped gate terminal plate 38 extending from the gate electrode 29a formed on the semiconductor substrate 28, and the outer peripheral portion of the gate terminal plate 38 is directly connected to the connection substrate 70 of the gate driver GD. It was fixed with the screw 75.

Here, the operation of the GCT thyristor and the gate driver will be described. FIG. 12 shows a GCT thyristor and a circuit configuration for operating the GCT thyristor. In FIG. 12, each reference numeral 3 denotes a GCT thyristor, and the gate electrode 3G and the cathode electrode 3 of the GCT thyristor 3 are shown.
The gate driver 4 (drive control means) is connected between the gate driver 4 and the K node 13. The gate driver 4 is substantially the same as the gate driver circuit section 15 described above.

The gate driver 4 has a driving power supply 4a
(Power supply voltage V _GD (for example, 20 V)), capacitor 4b,
It has an inductance 4C and a transistor 4d.

The gate driver 4 has a turn-on control current I _G for turning on the GCT thyristor 3.
The generated, the wiring path or via the line L1 is applied to the current I _G to the gate electrode 3G. In response, G
CT thyristor 3 is turned on. Reference numeral 11 denotes a node, 9 denotes a power supply for driving the device 10,
That is, it is a main circuit power supply (power supply voltage V _DD ).

[0022] On the other hand, reference numeral 1 is an inductance for suppressing the increase rate dI _A / dt of the primary current to the anode current I _A flows when the GCT thyristor 3 is turned on, 2, when the GCT thyristor 3 is turned off This is a return diode for returning energy generated in the inductance 1.

Reference numeral 5 denotes a node 11 of the anode electrode 3A.
And the node 12 of the cathode electrode 3K are connected in parallel to the GCT thyristor 3, and only the peak voltage generated as the anode-cathode electrode voltage V _AK rises when the GCT thyristor 3 is turned off. Is a peak voltage suppression circuit for suppressing the peak voltage. The circuit 5
When the voltage V _AK is turned off, the voltage V _AK has a function of holding or clamping the voltage V _AK for a predetermined time to a predetermined voltage value determined according to the voltage blocking ability of the GCT thyristor 3.

[0024] In the conventional GTO thyristor, during turn-off, the gate driver 4 and diverted from the main current I _A
It had flowed to the side, the at GCT thyristor by increasing as much as possible the absolute value of the rate of change or rate of rise of the gate reverse current I _GQ (gradient) dI _GQ / dt (ideally, | dI _GQ /
dt | is ∞), and to flow all of the main current I _A to the node 12 via the gate driver 4 as the gate reverse current I _GQ. That is, the main current I _A and the gate reverse current I _GQ and the ratio of the absolute value determined turn-off gain _{G (= | I A / I} GQ
|) Is set to 1 or less (G ≦ 1), so that the main current I _A
All, the turn-on control current I _G in the reverse direction, from the anode electrode 3A through the gate electrode 3G was commutated to the gate driver 4 and node 12 side, turning off the GCT thyristor 3 Te following. At this time, the anode electrode 3
The cathode current I _K flowing through the GCT thyristor 3 directly from A to the cathode electrode 3K immediately stops flowing at all. In that sense, this method, rather than the shunt of the main current I _A, with each other to achieve a "commutation of the main current I _A."

[0025] Here, the power supply voltage value V _GD of the driving power source (mains) 4a of the gate driver 4, depending on the relationship between the inductance value of the loop R1, is possible to change the value of the increase rate dI _GQ / dt It is possible to set the rise rate | dI _GQ / dt | to an extremely large value that is as close as possible to the ∞ value by appropriately setting the values of both 4 (4a) and R1.
Can be very short time it flows the main current I _A rolling a to all gate driver 4 side.

On the other hand, it is easy to realize such a commutation of the gate reverse current _IGQ by the gate driver 4 alone because there is a limit in the power supply voltage value V _GD that the driving power supply 4a of the driver 4 can take. However, on the other hand, the driving power supply voltage V _GD of the gate driver 4 is set to a practical value that can be set, and the absolute value of the rate of rise dI _GQ / dt required to set the gate turn-off gain G to 1 or less is set. Realizable loop R
It is actually possible to set the value of the internal inductance of 1.

Therefore, a line L1 from the gate electrode 3G to the gate driver 4, a gate driver 4, a line L2 from the gate driver 4 to the cathode 3K via the node 13, and a GCT thyristor 3 between the gate and the cathode. Loop or route R1 consisting of internal route
(Floating) internal inductance is required to be reduced to a value required to make the turn-off gain G 1 or less.

[0028]

As described above,
In the conventional GCT thyristor 90, the gate electrode is formed in a ring shape in order to increase the rate of rise (dI _GQ / dt) of the gate reverse current, and the contact area between the gate terminal plate of the GCT thyristor and the gate driver is increased. To reduce the total inductance between the gate driver and the GCT thyristor.

However, since the gate terminal plate 38 is fixed to the connection board 70 of the gate driver GD by screws, depending on the degree of screw tightening and the arrangement of screw holes,
The gate terminal plate 38 does not uniformly contact the connection substrate 70, and the main current cannot be diverted to the gate circuit from the insufficiently contacted portion, which may lead to device breakdown due to turn-off failure. there were. There is also a problem that workability is poor because a plurality of screws are used.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and a press-contact type semiconductor that can reliably transfer a main current to a gate circuit and can be easily mounted on a gate driver. Provide equipment.

[0031]

According to a first aspect of the present invention, there is provided a press-contact type semiconductor device, wherein a gate electrode is formed along an outer peripheral edge of one main surface, and a cathode electrode is formed inside the gate electrode. A semiconductor substrate having an anode electrode formed on the other main surface, a ring-shaped gate electrode having one end surface in contact with the gate electrode, a cathode post electrode electrically connected to the cathode electrode, and the anode electrode An anode post electrode electrically connected to, and disposed so as to surround the cathode post electrode and the anode post electrode, an electrically insulating insulating cylinder including at least the semiconductor substrate and the ring-shaped gate electrode, A gate terminal plate having an inner peripheral edge electrically connected to the ring-shaped gate electrode and an outer peripheral edge protruding from a side surface of the insulating cylinder; Each outside the cathode post electrode and the anode post electrode disposed, by the cathode stack electrode and an anode stacked electrode,
A gate that urges the cathode post electrode and the anode post electrode in directions facing each other, presses them both against the cathode electrode and the anode electrode, and generates a gate turn-on control current between the gate electrode and the cathode electrode. In a press-contact type semiconductor device in which a driver is electrically connected to the gate terminal plate and the cathode post electrode, the gate driver directly contacts the gate terminal plate and serves as a transmission path for the gate turn-on control current. A gate terminal plate press-contact means having a lead substrate, wherein the press-contact type semiconductor device press-connects an outer peripheral edge of the gate terminal plate to the gate lead substrate with press-contact of the cathode post electrode and the anode post electrode; Is further provided.

According to a second aspect of the present invention, in the pressure contact type semiconductor device, the gate driver is pressed against an end face of the cathode post electrode with the pressure contact between the cathode post electrode and the anode post electrode. A cathode lead substrate serving as a transmission path of a turn-on control current is further provided, wherein the gate lead substrate and the cathode lead substrate are stacked to form a stacked body, and the stacked body is configured such that when the cathode post electrode side is inserted, An end surface of the cathode post electrode is in contact with the cathode lead substrate serving as a bottom surface portion, and an outer peripheral edge portion of the gate terminal plate is a bottomed hole having a dimension to be in contact with the gate lead substrate serving as a peripheral portion. An electrical connection having a certain insertion portion, wherein the gate terminal plate press-contact means has an inner diameter set to a size surrounding the insulating cylinder. The anode stack electrode has a dimension that covers at least the outer periphery of the insulating cylinder, and when the cathode post electrode and the anode post electrode are pressed against each other, the insulating cylinder is The outer peripheral edge of the gate terminal plate is brought into pressure contact with the gate lead substrate.

According to a third aspect of the present invention, the insulating cylindrical body has flexibility at least in an axial direction.

According to a fourth aspect of the present invention, in the press-contact type semiconductor device, the insulating cylindrical body is a multilayer structure having at least a part thereof provided with a member having flexibility in the axial direction.

In the pressure contact type semiconductor device according to a fifth aspect of the present invention, the insulating cylinder is fixed to a predetermined position of the anode stack electrode.

In the pressure contact type semiconductor device according to the present invention, a gate electrode is formed along an outer peripheral edge of one main surface, a cathode electrode is formed inside the gate electrode, and the other main surface is formed. A semiconductor substrate having an anode electrode formed thereon, a ring-shaped gate electrode having one end surface in contact with the gate electrode, a cathode post electrode electrically connected to the cathode electrode, and an electrical connection to the anode electrode. An anode post electrode, an electrically insulating insulating cylinder provided to surround the cathode post electrode and the anode post electrode, and including at least the semiconductor substrate and the ring-shaped gate electrode; and an inner peripheral edge portion. A gate terminal plate electrically connected to the ring-shaped gate electrode and having an outer peripheral edge projecting from a side surface of the insulating cylinder; A cathode stack electrode and an anode stack electrode disposed outside the pole and the anode post electrode respectively urge the cathode post electrode and the anode post electrode in directions facing each other, and both of them are urged to the cathode electrode and the anode. In a press-contact type semiconductor device in which a gate driver that press-contacts an electrode and generates a gate turn-on control current between the gate electrode and the cathode electrode is electrically connected to the gate terminal plate and the cathode post electrode, A driver directly contacts the gate terminal plate and has a gate lead substrate serving as a transmission path of the gate turn-on control current, and the gate terminal plate is bent so that its outer peripheral edge has a spring property. It has a folded part.

8. The pressure-contact type semiconductor device according to claim 7, wherein the gate driver is pressed against an end face of the cathode post electrode with the pressure contact between the cathode post electrode and the anode post electrode. A cathode lead substrate serving as a transmission path of a turn-on control current is further provided, wherein the gate lead substrate and the cathode lead substrate are stacked to form a stacked body, and when the stacked body inserts the cathode post electrode side, An end surface of the cathode post electrode is in contact with the cathode lead substrate serving as a bottom surface portion, and an outer peripheral edge portion of the gate terminal plate is a bottomed hole having a dimension to be in contact with the gate lead substrate serving as a peripheral portion. The gate terminal plate has an insertion portion, and the outer peripheral edge portion having a spring property is provided with the cathode post electrode and the anode. It is intended to be pressed against the gate lead substrate with the pressure of Doposuto electrode.

In the pressure contact type semiconductor device according to the present invention, the gate terminal plate may be defined by a plurality of cuts formed at predetermined intervals in the outer peripheral edge portion having a spring property. It has multiple pieces.

[0039]

BEST MODE FOR CARRYING OUT THE INVENTION

First Embodiment <Device Configuration> FIG. 1 shows a cross-sectional configuration of a gate commutation type turn-off thyristor (hereinafter, referred to as a GCT thyristor) 100 as a press-contact type semiconductor device according to a first embodiment of the present invention.

In FIG. 1, a gate electrode 29a is formed on a surface located on the outer peripheral side of the lower surface of the semiconductor substrate 28 on which each segment of the GCT thyristor 100 is formed, and further inside the gate electrode 29a. Each cathode electrode 29b is formed on the lower surface of the semiconductor substrate 28 corresponding to the position of each segment.

Under the cathode electrode 29b on the lower surface of the semiconductor substrate 28, a cathode strain buffer plate 30 and a cathode post electrode 31 are sequentially arranged. On the other hand, an anode distortion buffer plate 32 is provided on the surface of the anode electrode (not shown) of the semiconductor substrate 28 (the surface opposite to the cathode electrode 29b).
And an anode post electrode 33 are sequentially arranged.

The gate electrode 29a of the semiconductor substrate 28
A ring-shaped gate electrode 34 is disposed so as to be in contact with the surface of the gate terminal plate 38A made of a ring-shaped metal plate.
However, it is arranged in contact with the inner peripheral edge surface of the ring gate electrode 34 so that the inner peripheral edge surface can slide with the electrode 34.

Along with the gate terminal plate 38A, a ring-shaped elastic body 35 such as a disc spring or a wave spring for pressing the ring-shaped gate electrode 34 against the gate electrode 29a is provided. Note that the elastic body 35 is configured to press the gate terminal plate 38A via the ring-shaped insulator 36.

An insulator 37 made of an insulating sheet or the like for insulating the ring-shaped gate electrode 34 from the cathode strain buffer plate 30 and the cathode post electrode 31 extends along the wall surfaces of the cathode strain buffer plate 30 and the cathode post electrode 31. It is arranged.

A cathode flange 26 is fixed to the edge of the cathode post electrode 31, and the anode post electrode 33
Has an anode flange 40 fixed thereto. And
Between the cathode flange 26 and the anode flange 40, an insulating cylinder 41 made of an insulating material such as ceramic is disposed so as to surround a main part of the GCT thyristor 100. The insulating cylinder 41 has a configuration in which the insulating cylinder 41 is vertically divided with the gate terminal plate 38A interposed therebetween, and has a protrusion 42 for increasing the creepage distance. Therefore, the outer peripheral portion of the gate terminal plate 38A protrudes outside from the side surface of the insulating cylinder 41. The insulating cylinder 41 is air-tightly fixed to the upper and lower surfaces of the gate terminal plate 38A. Here, the gate terminal plate 38A is formed of a ring-shaped metal plate having a diameter such that the gate terminal plate 38A projects further outward than the outer periphery of the protrusion 42 of the insulating cylinder 41.

A connecting plate 43a fixed to the lower end face of the insulating cylinder 41 is airtightly fixed to the cathode flange 26, and a connecting plate 43b fixed to the upper end face of the insulating cylinder 41 is airtightly fixed to the anode flange 40. As a result, the GCT thyristor 100 has a sealed package structure. The interior is replaced with an inert gas.

Next, the configuration of the gate driver GD1 and a state in which the GCT thyristor 100 is attached to the gate driver GD1 will be described with reference to FIG.

FIG. 2 is a diagram schematically showing a state in which the GCT thyristor 100 is mounted on the gate driver GD1.

As shown in FIG. 2, the gate driver GD1
Includes a gate driver circuit section 15 and a connection substrate 10 on which a circuit pattern is formed for electrically connecting the gate driver circuit section 15 and the GCT thyristor 100. The connection substrate 10 is a gate driver circuit unit 1
5 also extends.

In FIG. 2, a thyristor insertion portion 9 for inserting the GCT thyristor 100 is formed in the connection substrate 10, and its plan view shape is substantially the same as the gate driver GD described with reference to FIG. I do. GC
The T thyristor 100 is inserted into the thyristor insertion portion 9 with the cathode post electrode 31 side down.

Here, the configuration of the connection board 10 will be described. The connection substrate 10 includes a cathode lead substrate 101 located at the lowermost position, an insulator 102 provided above the cathode lead substrate 101, and a gate lead substrate 103 provided above the insulator 102. . An opening is provided so as to penetrate the gate lead substrate 103 and the insulator 102 and reach a predetermined depth of the cathode lead substrate 101, which serves as a thyristor insertion portion 9. The diameter of the thyristor insertion part 9 is at least GC
The size is set such that the cathode flange 26 of the T thyristor 100 can be accommodated. The depth is set to a depth at which the gate terminal plate 38A contacts the gate lead substrate 103 with the GCT thyristor 100 inserted. The cathode lead substrate 101 and the gate lead substrate 103 serve as a transmission path for a gate turn-on control current.

The gate driver GD1 is mounted on the cathode stack electrode SK1 with the GCT thyristor 100 inserted in the thyristor insertion section 9. And GC
An insulating cylindrical body (gate terminal plate pressing means) 50 is arranged so as to surround the T thyristor 100. Note that the cathode stack electrode SK1 and the anode stack SA1 bias the cathode post electrode 31 and the anode post electrode 33 in directions facing each other, and press the cathode strain buffer plate 30 and the anode strain buffer plate 32 against the semiconductor substrate 28. Things.

The inner diameter of the insulating cylinder 50 is larger than at least the outer diameter of the insulating cylinder 41 so that the GCT thyristor 100 can be accommodated inside. Then, the height is set to a height that completely accommodates a portion of the GCT thyristor 100 that is not accommodated in the thyristor insertion section 9.

The insulating cylindrical body 50 has one end surface in contact with the edge of the gate terminal plate 38A, and is pressed by the cathode stack electrode SK1 and the anostack SA1 against the GCT thyristor 100, so that the gate terminal plate 38A is pressed. Is pressed against the gate lead substrate 103 with a uniform force.

Since the outer peripheral edge of the gate terminal plate 38A must surely contact the end face of the insulating cylinder 50, the outer peripheral diameter of the gate terminal plate 38A must be at least 5 mm.
It is necessary to make the outer circumference of the same as 0. The anode stack electrode SA1 needs to have a size that covers at least the outer periphery of the insulating cylinder 50.

The insulating cylinder 50 is desirably formed of a flexible member. In other words, when formed of a non-flexible member, for example, ceramics or the like, if the height of the GCT thyristor 100 becomes too large to accommodate the GCT thyristor 100 due to dimensional tolerances during manufacture, the cathode stack electrode
Even if the GCT thyristor 100 is pressed by the K1 and the anode stack electrode SA1, the pressure is applied only to the insulating cylinder 50, and the cathode post electrode 31 and the anode post electrode 33 are not pressed. However, if it has flexibility, the height is reduced by the pressure, and the cathode post electrode 31 and the anode post electrode 33 can be pressed. Also, the cathode stack electrode SK1 and the anode stack electrode SA1 are formed by the insulating cylinder 50.
From the gate driver G
The pressure applied to the connection substrate 10 of D1 can be reduced.

As a material of the insulating cylinder 50, rubber or the like is used. As the type of rubber, one having excellent strength and heat resistance, for example, nitrile rubber or silicon rubber used for vacuum sealing is used.

Although the insulating cylinder 50 described above has been described using an example in which only rubber is used as the material, the insulating cylinder 50 may be made flexible by using a plurality of materials.

FIG. 3 shows an insulating cylindrical body 50A made of a plurality of materials. In FIG. 3, an insulating cylinder 50A has a glass epoxy resin 522 interposed therebetween and has rubber 5 on both sides.
21. Although the glass epoxy resin 522 does not have flexibility, the presence of the rubber 521 makes the entire insulating cylindrical body 50A flexible. Here, the glass epoxy resin 522 and the rubber 5
21 may be joined by using an adhesive.

Since the glass epoxy resin is inexpensive and easy to process, it is suitable for a pressure-contact type semiconductor device which tends to be large.

FIG. 4 shows an insulating cylindrical body 50B made of a plurality of materials. In FIG. 4, an elastic body 53 such as a disc spring is used.
3 is disposed at the center of the cylinder, a glass epoxy resin 532 is disposed on both sides thereof, and a rubber structure 531 is disposed on both sides thereof. Although the rubber 531 alone has sufficient flexibility, the flexibility can be further improved by the presence of the elastic body 533.

In the description with reference to FIG. 2, the insulating cylinder 50 is provided independently, but may be fixed to the anode stack electrode SA1. That is, when the GCT thyristor 100 is disposed so as to surround the same, the insulating cylinder 5
If the 0s are independent, there is a problem that it takes a long time for positioning. To reduce the size of the device, the difference between the inner diameter of the insulating cylinder 50 and the outer diameter of the insulating cylinder 41 is set small. Therefore, it takes time to arrange the insulating cylinder 50 so that the inner periphery of the insulating cylinder 50 does not contact the outer periphery of the insulating cylinder 41. However, the anode stack electrode SA1
In this case, it is not necessary to perform positioning at the time of assembling, and the manufacturing process can be simplified.

<Characteristic Effects> As described above,
The outer diameter of the gate terminal plate 38A is increased so that one end surface of the insulating cylindrical body 50 contacts the edge of the gate terminal plate 38A, and the cathode stack electrode SK1 and the anode stack electrode SA1 press the GCT thyristor 100. By pressing the gate terminal plate 38A with the end surface of the insulating cylindrical body 50, the edge of the gate terminal plate 38A is pressed against the gate lead substrate 103 with a uniform force, and the gate terminal plate 38A is 103 will surely come into contact. Therefore, loss of the main current due to poor contact can be prevented, the main current can be diverted to the gate circuit, and element destruction due to failure to turn off can be prevented.

Further, the attachment of the gate terminal plate 38A to the gate lead substrate 103 can be simplified, the workability can be improved, and the manufacturing cost can be reduced.

<Second Embodiment><DeviceConfiguration> FIG. 5 shows a cross-sectional configuration of a GCT thyristor 200 as a second embodiment of the press-contact type semiconductor device according to the present invention.

In FIG. 5, the same components as those of the GCT thyristor 100 described with reference to FIG. 1 are denoted by the same reference numerals, and redundant description will be omitted.

In FIG. 5, a ring-shaped gate electrode 34 is in contact with the surface of gate electrode 29a of semiconductor substrate 28.
The gate terminal plate 39 is slidably contacted with the ring-shaped gate electrode 34.

The gate terminal plate 39 is a ring-shaped metal plate, and its outer peripheral edge is bent with a curvature on the cathode side. 5, the outer peripheral edge of the gate terminal plate 39 has a curved portion 39a having a curvature and projecting upward (toward the anode), and the outermost edge 39b outside the curved portion 39a.
Is gently inclined to spread the hem. With such a configuration, the outer peripheral edge of the gate terminal plate 39 has a spring property.

Next, a state where the GCT thyristor 200 is attached to the gate driver GD1 will be described with reference to FIG. In FIG. 6, the same components as those shown in FIG. 2 are denoted by the same reference numerals, and redundant description will be omitted.

In FIG. 6, when the GCT thyristor 200 is inserted into the thyristor insertion portion 9 with the cathode post electrode 31 side down, the outermost edge 39 a of the gate terminal plate 39 comes into contact with the gate lead substrate 103. When the GCT thyristor 200 is pressed by the cathode stack electrode SK1 and the anode stack electrode SA1 in this state, the outer peripheral edge of the gate terminal plate 39 having a spring property is pressed against the gate lead substrate 103 while expanding, and the outermost edge is pressed. The portion 39b surely contacts the gate lead substrate 103.

<Modification> By providing a cutout in the radial direction at the outer peripheral edge of the gate terminal plate 39, it is possible to make the structure more springy.

FIG. 7 shows the outermost edge 39b of the gate terminal plate 39.
Are provided with notches 39c at predetermined intervals, and the notches 3
The flexibility of the portion sandwiched between 9c is increased to form the flexible piece 39d.

With such a configuration, when pressed by the cathode stack electrode SK1 and the anode stack electrode SA1, the outer peripheral edge becomes easy to spread, and the contact with the gate lead substrate 103 becomes more reliable. have.

<Characteristic Effects> As described above,
The outer peripheral edge of the gate terminal plate 39 has a structure having a spring property, and is electrically connected to the gate lead substrate 103 by being pressed by the cathode stack electrode SK1 and the anode stack electrode SA1. Is pressed against the gate lead substrate 103 with an equal force, so that the gate terminal plate 39 reliably contacts the gate lead substrate 103. Therefore, loss of the main current due to poor contact can be prevented, the main current can be diverted to the gate circuit, and element destruction due to failure to turn off can be prevented.

Further, the configuration for connection to the gate lead substrate 103 is simple, the number of parts is small, workability is improved, and manufacturing cost can be reduced.

[0076]

According to the pressure contact type semiconductor device according to the first aspect of the present invention, the outer peripheral edge of the gate terminal plate is brought into contact with the cathode post electrode and the anode post electrode by the gate terminal plate pressing means. Is pressed into contact with the gate lead substrate, so that the outer peripheral edge of the gate terminal plate comes into reliable contact with the gate lead substrate, preventing loss of the main current due to poor contact and transferring the main current to the gate circuit. Commutation can be performed, and element destruction due to turn-off failure can be prevented.

According to the pressure-contact type semiconductor device according to the second aspect of the present invention, the outer peripheral edge of the gate terminal plate is formed by the insulating cylindrical body along with the pressure contact between the cathode post electrode and the anode post electrode. Because it is pressed against
The outer peripheral edge of the gate terminal plate surely contacts the gate lead substrate with uniform pressure, preventing loss of the main current due to poor contact and commutating the main current to the gate circuit. Thus, device destruction due to turn-off failure can be prevented. Also, since the mounting of the gate terminal plate to the gate lead substrate only requires placing the insulating cylinder, the mounting is simpler than a configuration in which the gate terminal plate is mounted on the gate lead substrate by screwing, Workability is improved and manufacturing costs can be reduced.

According to the pressure-contact type semiconductor device according to the third aspect of the present invention, since the insulating cylindrical body has flexibility at least in the axial direction, the height is slightly increased due to dimensional tolerances during manufacturing. Even in such a case, since the height is reduced by being pressed by the cathode stack electrode and the anode stack electrode, a problem that the cathode post electrode and the anode post electrode are not pressed by the presence of the insulating cylinder is prevented. Further, since the force applied from the cathode stack electrode and the anode stack electrode is somewhat reduced by the insulating cylindrical body, the pressure applied to the cathode lead substrate and the gate lead substrate of the gate driver can be alleviated, and an excessive pressure is applied to both of them. Can be prevented.

According to the pressure-contact type semiconductor device according to the fourth aspect of the present invention, if the insulating cylindrical body has at least a portion of a member having flexibility in the axial direction, the cathode stack electrode and the anode stack Since the height is reduced by being pressed by the electrode, a problem that the cathode post electrode and the anode post electrode are not pressed by the presence of the insulating cylinder is prevented. Further, even when the flexible member is expensive, the manufacturing cost of the entire insulating cylinder can be reduced.

According to the pressure contact type semiconductor device of the fifth aspect of the present invention, since the insulating cylinder is fixed to the predetermined position of the anode stack electrode, the time required for positioning the insulating cylinder can be reduced. Can be.

According to the pressure contact type semiconductor device of the sixth aspect of the present invention, the outer peripheral edge of the gate terminal plate has a springy structure, and the gate lead substrate is pressed by the cathode stack electrode and the anode stack electrode. Since the gate terminal plate is electrically connected to the gate lead substrate, the edge of the gate terminal plate is pressed against the gate lead substrate with a uniform force, and the gate terminal plate surely contacts the gate lead substrate. Therefore, loss of the main current due to poor contact can be prevented, the main current can be diverted to the gate circuit, and element destruction due to failure to turn off can be prevented. Further, the configuration for connection with the gate lead substrate is simple, the number of parts is small, workability is improved, and manufacturing cost can be reduced.

According to the pressure contact type semiconductor device of the seventh aspect of the present invention, a specific structure for electrically connecting the gate terminal plate and the gate lead substrate by pressing with the cathode stack electrode and the anode stack electrode. To prevent loss of main current due to poor contact,
A main current can be diverted to the gate circuit, and a pressure-contact type semiconductor device in which element breakdown due to turn-off failure is prevented can be realized.

According to the pressure contact type semiconductor device of the present invention, since the gate terminal plate has a plurality of flexible pieces on the outer peripheral edge, the outer peripheral edge of the gate terminal plate is provided. The spring property can be further improved, and the contact between the gate terminal plate and the gate lead substrate becomes more reliable.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a configuration of a press contact type semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a press-contact state of the press-contact semiconductor device according to the first embodiment of the present invention;

FIG. 3 is a perspective view showing an example of a configuration of an insulating cylinder.

FIG. 4 is a perspective view showing an example of a configuration of an insulating cylinder.

FIG. 5 is a sectional view illustrating a configuration of a press contact type semiconductor device according to a second embodiment of the present invention;

FIG. 6 is a diagram illustrating a press-contact state of a press-contact type semiconductor device according to a second embodiment of the present invention;

FIG. 7 is a cross-sectional view illustrating a configuration of a modification of the press contact type semiconductor device according to the second embodiment of the present invention;

FIG. 8 is a cross-sectional view illustrating a configuration of a conventional pressure contact type semiconductor device.

FIG. 9 is a plan view illustrating a configuration of a conventional pressure contact type semiconductor device.

FIG. 10 is a plan view showing a configuration of a gate driver.

FIG. 11 is a cross-sectional view illustrating a configuration of a gate driver.

FIG. 12 is a circuit diagram illustrating an operation of the GCT thyristor.

[Explanation of symbols]

9 Thyristor insertion portion, 10 Connection substrate, 28 Semiconductor substrate, 31 Cathode post electrode, 33 Anode post electrode, 34 Ring-shaped gate electrode, 38A, 39 Gate terminal plate, 39a Curved portion, 39b End edge, 39c
Notch, 39d Flexible piece, 41 Insulation tube, 50
Insulating cylinder, 101 cathode lead substrate, 102 insulator, 103 gate lead substrate, GD1 gate driver, SA1 anode stack electrode, SK1 cathode stack electrode.

Claims (8)

[Claims] A semiconductor substrate having a gate electrode formed along an outer peripheral edge of one main surface, a cathode electrode formed inside the gate electrode, and an anode electrode formed on the other main surface; A ring-shaped gate electrode contacting the gate electrode, a cathode post electrode electrically connected to the cathode electrode, an anode post electrode electrically connected to the anode electrode, the cathode post electrode and the anode An electrically insulating insulating cylinder disposed so as to surround a post electrode and including at least the semiconductor substrate and the ring-shaped gate electrode; an inner peripheral edge portion electrically connected to the ring-shaped gate electrode; A gate terminal plate having an edge protruding from a side surface of the insulating cylinder; and a gate terminal plate outside the cathode post electrode and the anode post electrode. The cathode post electrode and the anode post electrode are urged in directions facing each other by a cathode stack electrode and an anode stack electrode, respectively, and both are pressed against the cathode electrode and the anode electrode. In a press-contact type semiconductor device in which a gate driver for generating a gate turn-on control current is electrically connected to the gate terminal plate and the cathode post electrode between a gate electrode and the cathode electrode, the gate driver includes the gate terminal plate And a gate lead substrate serving as a transmission path of the gate turn-on control current. The press-contact type semiconductor device is provided with a press-contact of the cathode post electrode and the anode post electrode. Press the outer peripheral edge against the gate lead substrate. A press-contact type semiconductor device, further comprising a gate terminal plate press-contact means in contact with the press-contact type. 2. The gate driver further comprises: a cathode lead substrate which is pressed against an end face of the cathode post electrode in accordance with the pressure contact between the cathode post electrode and the anode post electrode, and serves as a transmission path of the gate turn-on control current. The gate lead substrate and the cathode lead substrate are stacked to form a stacked body, and the stacked body is configured such that, when the cathode post electrode side is inserted, the end face of the cathode post electrode is a bottom surface portion. A gate terminal plate press-fitting means having an insertion portion which is in contact with a lead substrate and has a bottomed hole with an outer peripheral edge of the gate terminal plate having a dimension to be in contact with the gate lead substrate serving as a peripheral portion; Is an electrically insulating insulating cylinder whose inner diameter is set to a size surrounding the insulating cylinder; The back electrode has a dimension that covers at least the outer periphery of the insulating cylinder, and when the cathode post electrode and the anode post electrode are pressed against each other, the insulating cylinder is in contact with the outer peripheral edge of the gate terminal plate. The pressure-contact type semiconductor device according to claim 1, wherein the pressure-contact type semiconductor device is pressed against the gate lead substrate. 3. The pressure-contact type semiconductor device according to claim 2, wherein the insulating cylinder has flexibility at least in an axial direction. 4. The pressure-contact type semiconductor device according to claim 3, wherein the insulating cylinder is a multilayer structure having a member having flexibility in an axial direction at least in part. 5. The pressure contact type semiconductor device according to claim 3, wherein the insulating cylinder is fixed to a predetermined position of the anode stack electrode. 6. A semiconductor substrate having a gate electrode formed along an outer peripheral edge of one main surface, a cathode electrode formed inside the gate electrode, and an anode electrode formed on the other main surface; A ring-shaped gate electrode contacting the gate electrode, a cathode post electrode electrically connected to the cathode electrode, an anode post electrode electrically connected to the anode electrode, the cathode post electrode and the anode An electrically insulating insulating cylinder disposed so as to surround a post electrode and including at least the semiconductor substrate and the ring-shaped gate electrode; an inner peripheral edge portion electrically connected to the ring-shaped gate electrode; A gate terminal plate having an edge protruding from a side surface of the insulating cylinder; and a gate terminal plate outside the cathode post electrode and the anode post electrode. The cathode post electrode and the anode post electrode are urged in directions facing each other by a cathode stack electrode and an anode stack electrode, respectively, and both are pressed against the cathode electrode and the anode electrode. In a press-contact type semiconductor device in which a gate driver for generating a gate turn-on control current is electrically connected to the gate terminal plate and the cathode post electrode between a gate electrode and the cathode electrode, the gate driver includes the gate terminal plate And a gate lead substrate that is in direct contact with the gate turn-on control current and has a bent portion whose outer peripheral edge is bent to have a spring property. A pressure-contact type semiconductor device. 7. The gate driver further includes: a cathode lead substrate which is pressed against an end face of the cathode post electrode in accordance with the pressing of the cathode post electrode and the anode post electrode, and serves as a transmission path of the gate turn-on control current. The gate lead substrate and the cathode lead substrate are stacked to form a stacked body, and the stacked body is configured such that, when the cathode post electrode side is inserted, the end face of the cathode post electrode is a bottom surface portion. The gate terminal plate has an insertion portion that is a bottomed hole having a dimension to be in contact with the lead substrate and the outer peripheral edge of the gate terminal plate to be in contact with the gate lead substrate serving as the peripheral portion. The outer peripheral edge having a spring property is adapted to press the gate post electrode and the anode post electrode together with the gate post electrode. The pressure-contact type semiconductor device according to claim 6, which is pressed against a substrate. 8. The pressure-contact type semiconductor according to claim 7, wherein the gate terminal plate includes a plurality of flexible pieces defined by a plurality of cuts formed at predetermined intervals in the outer peripheral edge having a spring property. apparatus.