JPH10270743A - Photodetector and raman shifter element - Google Patents
Photodetector and raman shifter elementInfo
- Publication number
- JPH10270743A JPH10270743A JP9092981A JP9298197A JPH10270743A JP H10270743 A JPH10270743 A JP H10270743A JP 9092981 A JP9092981 A JP 9092981A JP 9298197 A JP9298197 A JP 9298197A JP H10270743 A JPH10270743 A JP H10270743A
- Authority
- JP
- Japan
- Prior art keywords
- gap
- light
- porous
- raman
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001069 Raman spectroscopy Methods 0.000 title claims abstract description 35
- 230000000694 effects Effects 0.000 claims abstract description 4
- 229910005540 GaP Inorganic materials 0.000 claims description 55
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 7
- 230000031700 light absorption Effects 0.000 abstract description 4
- 230000005284 excitation Effects 0.000 abstract description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 230000036211 photosensitivity Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 7
- 238000002048 anodisation reaction Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000000635 electron micrograph Methods 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910017401 Au—Ge Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、多孔質ガリウムリ
ンを用いた受光素子及びラマンシフタ用素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light receiving element and a Raman shifter element using porous gallium phosphide.
【０００２】[0002]
【従来の技術】ガリウムリン（以下「ＧａＰ」とい
う。）は、特に紫外線に高感度であるため、紫外線用の
受光素子として広く用いられている。2. Description of the Related Art Gallium phosphide (hereinafter referred to as "GaP") is widely used as a light receiving element for ultraviolet light because it has high sensitivity to ultraviolet light.
【０００３】ラマン効果によって現れる散乱光のスペク
トルは、ストークス線と反ストークス線とからなる。入
射光と各線との間のエネルギ差（又は振動数差、波数
差）をラマンシフトという。ラマンシフタ用素子は、ラ
マンレーザ等に用いられ、例えばＢａ（ＮＯ3 ）2 が市
販されている。[0003] The spectrum of the scattered light generated by the Raman effect is composed of Stokes lines and anti-Stokes lines. The energy difference (or frequency difference, wave number difference) between the incident light and each line is called Raman shift. The Raman shifter element is used for a Raman laser or the like, and for example, Ba (NO 3 ) 2 is commercially available.
【０００４】[0004]
【発明が解決しようとする課題】ＧａＰを用いた受光素
子は、更に高感度化が求められている。The light-receiving element using GaP is required to have higher sensitivity.
【０００５】ラマンシフタ用素子は、更に強いラマン散
乱光が求められている。[0005] Raman shifter elements are required to have stronger Raman scattered light.
【０００６】[0006]
【発明の目的】そこで、本発明の目的は、高感度化を達
成できる紫外線用の受光素子、及びラマン散乱光強度の
向上を達成できるラマンシフタ用素子を提供することに
ある。SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide an ultraviolet light receiving element capable of achieving high sensitivity and a Raman shifter element capable of improving Raman scattered light intensity.
【０００７】[0007]
【課題を解決するための手段】本発明に係る受光素子
は、光電効果に基づき光を電気に変換するものであっ
て、受光面が多孔質ガリウムリンからなるものである。
多孔質ＧａＰは単結晶ＧａＰに比べてＰＬ強度が大きく
なる。多孔質ＧａＰの表面はすり鉢状の構造となってい
るので、励起光の吸収率が増加し、そのためＰＬ強度が
大きくなったと考えられる。したがって、多孔質ＧａＰ
を受光面とする受光素子は、光の吸収率が増加するので
高感度となる。また、本発明に係る受光素子は、ショッ
トキー型、低容量拡散型、ＰＮＮ+ 型、ＰＩＮ型、アバ
ランシェ型等のフォトダイオード、又はフォトトランジ
スタ、フォトサイリスタ等としてもよい。The light receiving element according to the present invention converts light into electricity based on a photoelectric effect, and has a light receiving surface made of porous gallium phosphide.
The PL intensity of porous GaP is higher than that of single-crystal GaP. It is considered that since the surface of the porous GaP has a mortar-like structure, the absorptance of the excitation light increased, and therefore the PL intensity increased. Therefore, porous GaP
The light receiving element having a light receiving surface has high sensitivity because the light absorption rate increases. Further, the light receiving element according to the present invention may be a photodiode of a Schottky type, a low capacity diffusion type, a PNN + type, a PIN type, an avalanche type, or the like, a phototransistor, a photothyristor, or the like.
【０００８】本発明に係るラマンシフタ用素子は、入射
光をラマンシフトさせた出射光を得るためのものであっ
て、入射光の受光面が多孔質ガリウムリンからなるもの
である。多孔質ＧａＰのラマン散乱光は極めて強い。し
たがって、多孔質ＧａＰを受光面とするラマンシフタ用
素子は、極めて強い出射光が得られる。The Raman shifter element according to the present invention is for obtaining outgoing light obtained by Raman shifting incident light, and the light receiving surface of the incident light is made of porous gallium phosphide. Raman scattering light of porous GaP is extremely strong. Therefore, an element for Raman shifter using porous GaP as a light receiving surface can obtain extremely strong emitted light.
【０００９】[0009]
【発明の実施の形態】本発明に係る受光素子及びラマン
シフタ用素子に用いられる多孔質ＧａＰは、例えば、次
の工程〜により製造する。．ＧａＰ単結晶とし
て、硫黄（Ｓ）を4.6 ×1017cm-3ドープした、面方位
（１１１）のｎ型ＧａＰ基板を用意する。．ＧａＰ基
板の裏面に、金−ゲルマニウム（Ａｕ−Ｇｅ）合金を真
空蒸着により被着させる。Ａｕ−Ｇｅ合金の組成は、Ａ
ｕが88wt％であり、Ｇｅが12wt％である。真空蒸着時の
真空度は１×10-6Torr以上である。．ＧａＰ基板の表
面を、陽極化成法により多孔質化する。BEST MODE FOR CARRYING OUT THE INVENTION The porous GaP used for the light-receiving element and the Raman shifter element according to the present invention is manufactured, for example, by the following steps. . As a GaP single crystal, an n-type GaP substrate of (111) plane orientation doped with 4.6 × 10 17 cm −3 of sulfur (S) is prepared. . A gold-germanium (Au-Ge) alloy is deposited on the back surface of the GaP substrate by vacuum evaporation. The composition of the Au—Ge alloy is A
u is 88 wt% and Ge is 12 wt%. The degree of vacuum during vacuum deposition is 1 × 10 −6 Torr or more. . The surface of the GaP substrate is made porous by an anodizing method.
【００１０】工程について、図１に基づき詳しく説明
する。ビーカ１０は、ポリテトラフルオロエチレン製で
あり、底面１０ａに透孔１０ｂが穿設されている。ビー
カ１０内のエッチング液１２は、50wt％のフッ酸（Ｈ
Ｆ）をエチルアルコール（Ｃ2Ｈ5 ＯＨ）によって50％
に希釈したものである。ビーカ１０の底面１０ａは、Ｏ
リング１４を介して、ＧａＰ基板１６の表面１６ａに対
向している。したがって、エッチング液１２は、透孔１
０ｂを通ってＧａＰ基板１６の表面１６ａに接触してい
る。ＧａＰ基板１６の裏面１６ｂは銀ペースト等によっ
て銅板１８に貼り付けられている。陽極化成は、銅板１
８が陽極でプラチナ板２０が陰極となるように電流源２
２を接続し、電流密度20〜40mA/cm2、時間１〜５分、か
つ無照明下の条件により行った。これにより、ＧａＰ基
板１６の表面１６ａが多孔質化された。なお、無照明の
代わりに、室内照明、キセノンランプ又は水銀ランプ等
を用いてもよい。The process will be described in detail with reference to FIG. The beaker 10 is made of polytetrafluoroethylene, and has a through hole 10b formed in a bottom surface 10a. The etching solution 12 in the beaker 10 contains 50 wt% hydrofluoric acid (H).
F) 50% with ethyl alcohol (C 2 H 5 OH)
It was diluted to The bottom surface 10a of the beaker 10 is
It faces the surface 16 a of the GaP substrate 16 via the ring 14. Therefore, the etching solution 12 is provided in the through hole 1.
Ob is in contact with the surface 16 a of the GaP substrate 16. The back surface 16b of the GaP substrate 16 is attached to the copper plate 18 with a silver paste or the like. Anodization is copper plate 1
Current source 2 so that 8 is an anode and platinum plate 20 is a cathode.
2 was connected, the current density was 20 to 40 mA / cm 2 , the time was 1 to 5 minutes, and no light was applied. Thereby, the surface 16a of the GaP substrate 16 was made porous. Note that, instead of no illumination, indoor illumination, a xenon lamp, a mercury lamp, or the like may be used.
【００１１】また、工程では、Ｏリング１４を用いる
ことにより、ＧａＰ基板１６の表面１６ａにのみ、エッ
チング液１２を接触させるようにしている。したがっ
て、ＧａＰ基板１６全体をエッチング液１２に浸漬する
方法に比べて、洗浄が容易であるとともに、ＧａＰ基板
１６の裏面１６ｂ側の保護膜が不要である。In the step, the etching solution 12 is brought into contact only with the surface 16 a of the GaP substrate 16 by using the O-ring 14. Therefore, the cleaning is easier and the protective film on the back surface 16b side of the GaP substrate 16 is unnecessary as compared with the method of dipping the entire GaP substrate 16 in the etching solution 12.
【００１２】次に、工程〜により製造した多孔質Ｇ
ａＰについてフォトルミネッセンス（以下「ＰＬ」とい
う。）法により評価した結果を、図２及び図３に示す。
ＰＬ法による評価は、試料をクライオスタット内に取付
け、Ｈｅ−Ｃｄレーザの波長325nm の光により試料を励
起し、試料から発するＰＬ光をダブルモノクロメータに
より分光し、ＧａＡｓ光電子増倍管でＰＬスペクトルを
受光することにより行った。Next, the porous G
The results of evaluating aP by the photoluminescence (hereinafter, referred to as “PL”) method are shown in FIGS. 2 and 3.
In the evaluation by the PL method, the sample is mounted in a cryostat, the sample is excited by light of a He-Cd laser having a wavelength of 325 nm, the PL light emitted from the sample is separated by a double monochromator, and the PL spectrum is measured by a GaAs photomultiplier. This was performed by receiving light.
【００１３】図２は、20mA/cm2で陽極化成された多孔質
ＧａＰにおける、バンド端付近の発光スペクトルの陽極
化成時間依存性を示すグラフである。５min 陽極化成さ
れた多孔質ＧａＰのＰＬ強度は、単結晶ＧａＰに比べて
２倍以上である。図３は、40mA/cm2で陽極化成された多
孔質ＧａＰにおける、バンド端付近の発光スペクトルの
陽極化成時間依存性を示すグラフである。５min 陽極化
成された多孔質ＧａＰのＰＬ強度は、単結晶ＧａＰに比
べて３倍以上である。なお、560nm 付近の鋭いピーク
は、ＧａＰ中のドナー・アクセプタ間での発光である。
700nm 付近の比較的ブロードなピークは、ＧａＰ中の硫
黄の空孔に束縛された励起子による発光である。このよ
うに、多孔質ＧａＰは単結晶ＧａＰに比べてＰＬ強度が
極めて大きくなる。FIG. 2 is a graph showing the anodization time dependence of the emission spectrum near the band edge in porous GaP anodized at 20 mA / cm 2 . The PL intensity of the porous GaP anodized for 5 min is more than twice as high as that of single crystal GaP. FIG. 3 is a graph showing the anodization time dependence of the emission spectrum near the band edge in porous GaP anodized at 40 mA / cm 2 . The PL intensity of the porous GaP that has been anodized for 5 minutes is three times or more that of single crystal GaP. The sharp peak near 560 nm is light emission between donor and acceptor in GaP.
The relatively broad peak near 700 nm is emission from excitons bound to sulfur vacancies in GaP. Thus, the PL intensity of porous GaP is extremely higher than that of single-crystal GaP.
【００１４】図４は、40mA/cm2かつ５min で陽極化成さ
れた多孔質ＧａＰ表面の3000倍の電子顕微鏡写真であ
る。図５は、40mA/cm2かつ５min で陽極化成された多孔
質ＧａＰ表面の 10000倍の電子顕微鏡写真である。これ
らの図面から明らかなように、多孔質ＧａＰ表面は、10
0nm 程度の逆ピラミッド状乃至すり鉢状の多数の孔が形
成されている。このような構造によって光吸収率が増加
するので、ＰＬ強度が大きくなったと考えられる。FIG. 4 is a 3000 × electron micrograph of a porous GaP surface anodized at 40 mA / cm 2 and 5 min. FIG. 5 is a 10000 × electron micrograph of a porous GaP surface anodized at 40 mA / cm 2 and 5 min. As is apparent from these figures, the porous GaP surface has a
A large number of inverted pyramidal or mortar-shaped holes of about 0 nm are formed. It is considered that the PL intensity was increased because the light absorption rate was increased by such a structure.
【００１５】したがって、多孔質ＧａＰを受光面とする
受光素子は、光吸収率が増加するので高感度となる。例
えば、工程〜により製造した多孔質ＧａＰにＡｕ薄
膜を蒸着することにより、ショットキー型のフォトダイ
オードとすることが好ましい。このショットキー型のフ
ォトダイオードは、表面から接合部までの距離が短いの
で、紫外線領域まで高感度が得られる。Accordingly, the light receiving element having the light receiving surface of porous GaP has high sensitivity because the light absorptance increases. For example, it is preferable to form a Schottky photodiode by depositing an Au thin film on the porous GaP manufactured in the steps (1) to (4). Since the distance from the surface to the junction is short, this Schottky photodiode has high sensitivity up to the ultraviolet region.
【００１６】次に、工程〜により製造した多孔質Ｇ
ａＰについてレーザラマン分光法により評価した結果
を、図６に示す。レーザラマン分光法による評価は、Ａ
ｒ+ レーザの波長488nm の光により試料を励起し、試料
から発するラマン散乱光をダブルモノクロメータにより
分光し、ＧａＡｓ光電子増倍管で受光することにより行
った。Next, the porous G
FIG. 6 shows the results of evaluating aP by laser Raman spectroscopy. Evaluation by laser Raman spectroscopy
The sample was excited by light of a wavelength of 488 nm of an r + laser, the Raman scattered light emitted from the sample was separated by a double monochromator, and received by a GaAs photomultiplier tube.
【００１７】図６は、多孔質ＧａＰからのラマン散乱ス
ペクトルの通過電荷量依存性を示すグラフである。１２
Ｃの通過電荷量で陽極化成された多孔質ＧａＰの横型光
学フォノン（ＬＯ）及び縦型光学フォノン（ＴＯ）にお
けるラマン散乱スペクトルは、単結晶ＧａＰ（通過電荷
量０Ｃ）に比べて４倍以上である。このように、多孔質
ＧａＰのラマン散乱光は極めて強い。したがって、多孔
質ＧａＰを受光面とするラマンシフタ用素子は、極めて
強い出射光が得られる。FIG. 6 is a graph showing the dependence of the Raman scattering spectrum from porous GaP on the amount of passing charges. 12
The Raman scattering spectrum of the horizontal optical phonon (LO) and the vertical optical phonon (TO) of the porous GaP anodized with the passing charge amount of C is at least four times as large as that of the single crystal GaP (the passing charge amount of 0C). is there. Thus, the Raman scattered light of porous GaP is extremely strong. Therefore, an element for Raman shifter using porous GaP as a light receiving surface can obtain extremely strong emitted light.
【００１８】[0018]
【発明の効果】本発明に係る受光素子によれば、受光面
が多孔質ガリウムリンからなることにより、光吸収率を
向上できるので、感度を向上できる。したがって、高感
度の紫外線用受光素子を提供できる。According to the light receiving element of the present invention, since the light receiving surface is made of porous gallium phosphide, the light absorptance can be improved, so that the sensitivity can be improved. Therefore, a highly sensitive ultraviolet light receiving element can be provided.
【００１９】本発明に係るラマンシフタ用素子によれ
ば、入射光の受光面が多孔質ガリウムリンからなること
により、極めて強いラマン散乱光を得ることができる。
したがって、極めて強い出射光が得られるラマンレーザ
を提供することができる。According to the Raman shifter element of the present invention, since the light receiving surface of the incident light is made of porous gallium phosphide, extremely strong Raman scattered light can be obtained.
Therefore, it is possible to provide a Raman laser capable of obtaining extremely strong emitted light.
【図１】本発明に係る受光素子及びラマンシフタ用素子
に用いられる多孔質ＧａＰの製造工程の一例を示す説明
図である。FIG. 1 is an explanatory diagram showing an example of a manufacturing process of porous GaP used for a light receiving element and a Raman shifter element according to the present invention.
【図２】本発明に係る受光素子及びラマンシフタ用素子
に用いられる多孔質ＧａＰにおける、バンド端付近の発
光スペクトルの陽極化成時間依存性を示すグラフであ
る。FIG. 2 is a graph showing the anodization time dependence of the emission spectrum near the band edge in porous GaP used for the light receiving element and the Raman shifter element according to the present invention.
【図３】本発明に係る受光素子及びラマンシフタ用素子
に用いられる多孔質ＧａＰにおける、バンド端付近の発
光スペクトルの陽極化成時間依存性を示すグラフであ
る。FIG. 3 is a graph showing the anodization time dependence of the emission spectrum near the band edge in porous GaP used for the light receiving element and the Raman shifter element according to the present invention.
【図４】本発明に係る受光素子及びラマンシフタ用素子
に用いられる多孔質ＧａＰの電子顕微鏡写真である。FIG. 4 is an electron micrograph of porous GaP used in the light receiving element and the Raman shifter element according to the present invention.
【図５】本発明に係る受光素子及びラマンシフタ用素子
に用いられる多孔質ＧａＰの電子顕微鏡写真である。FIG. 5 is an electron micrograph of porous GaP used for a light receiving element and a Raman shifter element according to the present invention.
【図６】本発明に係る受光素子及びラマンシフタ用素子
に用いられる多孔質ＧａＰにおける、ラマン散乱スペク
トルの通過電荷量依存性を示すグラフである。FIG. 6 is a graph showing the dependence of the Raman scattering spectrum on the amount of transmitted charges in porous GaP used for the light receiving element and the element for Raman shifter according to the present invention.
１０ ビーカ １２ エッチング液 １４ Ｏリング １６ ＧａＰ基板 １８ 銅板 ２０ プラチナ板 ２２ 電流源 DESCRIPTION OF SYMBOLS 10 Beaker 12 Etchant 14 O-ring 16 GaP substrate 18 Copper plate 20 Platinum plate 22 Current source
Claims (2)
光素子において、受光面が多孔質ガリウムリンからなる
ことを特徴とする受光素子。1. A light-receiving element for converting light into electricity based on a photoelectric effect, wherein the light-receiving surface is made of porous gallium phosphide.
るためのラマンシフタ用素子において、 入射光の受光面が多孔質ガリウムリンからなることを特
徴とするラマンシフタ用素子。2. A Raman shifter element for obtaining outgoing light obtained by Raman-shifting incident light, wherein the light receiving surface of the incident light is made of porous gallium phosphide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9092981A JPH10270743A (en) | 1997-03-27 | 1997-03-27 | Photodetector and raman shifter element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9092981A JPH10270743A (en) | 1997-03-27 | 1997-03-27 | Photodetector and raman shifter element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10270743A true JPH10270743A (en) | 1998-10-09 |
Family
ID=14069570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9092981A Pending JPH10270743A (en) | 1997-03-27 | 1997-03-27 | Photodetector and raman shifter element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10270743A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5656689A (en) * | 1979-10-15 | 1981-05-18 | Semiconductor Res Found | Semiconductor raman laser |
| JPH07122550A (en) * | 1993-10-22 | 1995-05-12 | Hitachi Ltd | Method for forming laminated structure of semiconductor and method for forming semiconductor device using the same |
| JPH07142755A (en) * | 1993-11-19 | 1995-06-02 | Toyota Motor Corp | Method for forming inverted pyramid texture |
-
1997
- 1997-03-27 JP JP9092981A patent/JPH10270743A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5656689A (en) * | 1979-10-15 | 1981-05-18 | Semiconductor Res Found | Semiconductor raman laser |
| JPH07122550A (en) * | 1993-10-22 | 1995-05-12 | Hitachi Ltd | Method for forming laminated structure of semiconductor and method for forming semiconductor device using the same |
| JPH07142755A (en) * | 1993-11-19 | 1995-06-02 | Toyota Motor Corp | Method for forming inverted pyramid texture |
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