JPH10270859A - Method for manufacturing multilayer wiring board - Google Patents
Method for manufacturing multilayer wiring boardInfo
- Publication number
- JPH10270859A JPH10270859A JP7497897A JP7497897A JPH10270859A JP H10270859 A JPH10270859 A JP H10270859A JP 7497897 A JP7497897 A JP 7497897A JP 7497897 A JP7497897 A JP 7497897A JP H10270859 A JPH10270859 A JP H10270859A
- Authority
- JP
- Japan
- Prior art keywords
- wiring board
- multilayer wiring
- manufacturing
- insulating resin
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
(57)【要約】
【課題】導体回路間の線間絶縁特性に優れた、信頼性の
高いビルドアップ多層配線基板の製造方法を提供する。
さらに最表面導体回路間隔が狭い場合でも、高歩留まり
で表面メタライズが可能なビルドアップ基板の製造方法
を提供する。
【解決手段】導体回路形成工程と層間絶縁膜形成工程と
を交互に繰り返し、ビルドアップ方式によリ多層配線基
板を製造する際、導体回路形成後に導体回路間の絶縁樹
脂表面をO2プラズマ処理あるいは、UV/O3処理によ
り軽くエッチングした後、水洗することにより化学的に
除去する。
(57) Abstract: Provided is a method for manufacturing a reliable build-up multilayer wiring board having excellent line insulation characteristics between conductor circuits.
Further, the present invention provides a method of manufacturing a build-up substrate capable of performing high-yield surface metallization even when the distance between the outermost conductor circuits is small. A repeating the conductor circuit forming step and the interlayer insulating film forming step are alternately, making the re multilayer wiring board by the build-up method, the insulating resin surface of the conductor circuits after the conductor circuit formation O 2 plasma treatment Alternatively, after etching lightly by UV / O 3 treatment, it is chemically removed by washing with water.
Description
【0001】[0001]
【発明の属する技術分野】本発明は多層配線基板の製造
方法に関する。[0001] The present invention relates to a method for manufacturing a multilayer wiring board.
【0002】[0002]
【従来の技術】電子機器の高機能化及び半導体デバイス
の高集積化に伴い、プリント基板も高密度化が求められ
ており、現在では多層基板がその主流となっている。多
層配線板の製造法は、大きく分けて積層接着法とビルド
アップ法の2種類が広く知られている。積層接着法は、
内層となる積層板にドリルによりブラインドバイヤホー
ルを形成するブラインド孔を開けて、これにめっきを施
すことによりブラインドバイヤホールを有する積層板を
形成し、このブラインドバイヤホールを有する積層板に
外層を積層プレスした後、スルーホール孔を開け、めっ
きすることにより多層配線板を製造する方法である。し
かし、この積層接着法では、層間接続を行うためのブラ
インドバイヤホールやスルーホールがメカニカルなドリ
リングによって開けられるために比較的寸法が大きく、
配線密度を上げるのが難しい。特に近年、民生用各種電
子機器等の小型化や薄膜化に伴い、所定の電気回路を構
成する配線基板を収納するスペースは非常に限られたも
のとなってきており、この限られたスペース内に所望通
りの電気回路を構成する配線基板を収納するためには、
感光性樹脂を用いた微細なフォトビアホールにより各層
間の導通をとるビルドアップ法による薄板化と高密度化
が有力な技術となってきている。2. Description of the Related Art As electronic devices have become more sophisticated and semiconductor devices have become more highly integrated, printed circuit boards have also been required to have higher densities. At present, multilayer boards have become the mainstream. There are two widely known methods for manufacturing a multilayer wiring board, a lamination bonding method and a build-up method. The laminating method is
A blind hole for forming a blind via hole is formed by drilling a laminated plate serving as an inner layer, and a plating plate is formed on the laminated plate to form a laminated plate having a blind via hole, and an outer layer is laminated on the laminated plate having the blind via hole. This is a method of manufacturing a multilayer wiring board by punching through holes after plating and plating. However, in this laminate bonding method, the blind via holes and through holes for interlayer connection are opened by mechanical drilling, so the dimensions are relatively large,
It is difficult to increase the wiring density. In recent years, in recent years, as various types of consumer electronic devices have become smaller and thinner, the space for accommodating wiring boards constituting a predetermined electric circuit has become very limited. In order to house the wiring board that constitutes the desired electric circuit in
2. Description of the Related Art Thinning and densification by a build-up method in which conduction between layers is achieved by fine photo via holes using a photosensitive resin has become an effective technique.
【0003】層間絶縁膜に感光性樹脂を用いたビルドア
ップ法による多層配線基板の製造方法については、例え
ば特開平4−148590号公報がある。この配線基板
は、基材にガラスエポキシ銅張積層板を使用し、絶縁層
は感光性エポキシ樹脂、導体層は銅めっきをもって順次
積層した構造からなっている。ビルドアップ法による多
層配線基板の製造方法では、絶縁層と導体回路、特に絶
縁層上の導体回路が強固に接着していることが非常に重
要となる。この絶縁層上に導体回路を強固に接着する技
術は、例えば特開平6−260763号公報あるいは特
開平7−15139号公報に示されるように、クロム酸
または過マンガン酸カリウム溶液で絶縁層を粗化し、そ
の表面に導体層を形成する方法が広く行われている。A method of manufacturing a multilayer wiring board by a build-up method using a photosensitive resin for an interlayer insulating film is disclosed, for example, in Japanese Patent Application Laid-Open No. 4-148590. This wiring board has a structure in which a glass epoxy copper-clad laminate is used as a base material, an insulating layer is photosensitive epoxy resin, and a conductor layer is sequentially laminated by copper plating. In the method of manufacturing a multilayer wiring board by the build-up method, it is very important that the insulating layer and the conductive circuit, particularly the conductive circuit on the insulating layer, are firmly bonded. As a technique for firmly bonding a conductor circuit onto the insulating layer, for example, as disclosed in JP-A-6-260763 or JP-A-7-15139, the insulating layer is roughened with a chromic acid or potassium permanganate solution. The method of forming a conductor layer on the surface thereof has been widely performed.
【0004】[0004]
【発明が解決しようとする課題】粗化工程は、ビルドア
ップ法で不可欠、最重要な工程であるが、同時に粗化工
程に付随して下記のような問題が生じるために、ビルド
アップ基板の高密度、高精細化の障害ともなっている。
第一は、導体回路間の線間絶縁性の問題である。すなわ
ち、ビルドアップ法では、樹脂上の導体回路との接着を
高めるために、粗化によって樹脂中の無機フィラあるい
は逆に樹脂を溶解させることにより、絶縁樹脂表面上に
多孔の凹凸形状を形成している。この後、全面めっきを
施してエッチングにより導体回路を形成するが、導体回
路形成後の回路間樹脂表面には、粗化工程時に形成され
た多孔の凹凸がそのままの形状で存在している。この間
隙の多い絶縁樹脂層は、恒温恒湿試験中に水蒸気が浸透
・吸湿しやすいために導体回路近傍で金属の溶解すなわ
ちマイグレーションが促進されやすい。特に最外層のソ
ルダレジストに覆われていない導体回路間では、直接外
気に晒される結果、結露しやすくマイグレーションの進
行も内層に比較して格段に早い。また、絶縁樹脂上にめ
っきで形成した金属層をエッチングして導体回路を形成
するときに、樹脂の凹部に金属が残りやすいこと、さら
には、樹脂の凹部に染み込んだプロセス処理液の洗浄が
十分に行われずイオン性残渣が残りやすいことなどもマ
イグレーション進行促進に繋がる。The roughening step is indispensable and the most important step in the build-up method. At the same time, however, the following problems are accompanied by the roughening step, so that the This is an obstacle to high density and high definition.
The first is the problem of line insulation between conductor circuits. In other words, in the build-up method, in order to enhance the adhesion with the conductor circuit on the resin, the inorganic filler in the resin is melted by the roughening or, conversely, the resin is dissolved to form a porous uneven shape on the insulating resin surface. ing. Thereafter, the entire surface is plated to form a conductive circuit by etching. However, on the resin surface between the circuits after the formation of the conductive circuit, the porous irregularities formed during the roughening step are present in the same shape. In the insulating resin layer having many gaps, water vapor easily penetrates and absorbs moisture during the constant temperature and constant humidity test, so that melting or migration of metal near the conductor circuit is easily promoted. In particular, conductive circuits that are not covered with the outermost layer of solder resist are directly exposed to the outside air. As a result, dew condensation easily occurs, and migration proceeds much faster than that of the inner layer. In addition, when a conductive circuit is formed by etching a metal layer formed by plating on an insulating resin, the metal is likely to remain in the concave portion of the resin, and further, the cleaning of the processing solution penetrated into the concave portion of the resin is sufficient. The fact that ionic residues are likely to remain without being performed also leads to the promotion of migration progress.
【0005】第二は、導体回路間へのめっき異常析出の
問題である。すなわち、基板の表面パッド上には、半田
を介して部品が搭載されるが、銅パッドそのものだと半
田の食われ量が大きい。そこでリペア耐性を持たせるた
めに通常ニッケルめっきが施され、さらにニッケル膜上
に半田濡れ性を確保するために金めっきが施される。こ
のニッケルめっきあるいは金めっきは、表面パッドの全
てが電気的に接続されているわけではないため、無電解
めっきで行われる。しかし、導体回路間の樹脂表面に
は、粗化工程時に形成された多孔の凹凸形状を持つ層が
残っており、その凹部には、金属残渣すなわち下地導電
膜形成時の触媒Pd及び回路形成後の銅エッチング残り
がわずかながら存在する。ニッケルめっきの際には、こ
の金属残渣が核となりニッケルが析出するためにめっき
異常析出が発生する。また、粗化後の樹脂表面には、多
くの孔が存在するため、ニッケルめっきの際に発生した
水素が、導体間の樹脂表面にトラップされやすい。この
水素が活性を持っているとニッケルを還元する結果、ニ
ッケル粒子が析出して導体回路間に付着する。特に導体
回路間の間隔が小さくなるほどこの現象は顕著になる。[0005] The second problem is that abnormal plating is deposited between conductor circuits. That is, components are mounted on the surface pads of the substrate via solder, but the copper pads themselves cause a large amount of solder erosion. Therefore, nickel plating is usually applied to provide repair resistance, and gold plating is applied on the nickel film to ensure solder wettability. This nickel plating or gold plating is performed by electroless plating because not all surface pads are electrically connected. However, a layer having a porous concavo-convex shape formed during the roughening step remains on the resin surface between the conductor circuits, and the concave portions have metal residues, that is, the catalyst Pd at the time of forming the underlying conductive film and the post-circuit formation. There is a slight copper etching residue. At the time of nickel plating, this metal residue becomes a nucleus and nickel is precipitated, so that abnormal plating occurs. In addition, since many holes are present on the roughened resin surface, hydrogen generated during nickel plating is easily trapped on the resin surface between the conductors. If the hydrogen has an activity, it reduces nickel, and as a result, nickel particles precipitate and adhere between the conductor circuits. In particular, this phenomenon becomes more remarkable as the interval between the conductor circuits becomes smaller.
【0006】粗化表面上の金属残渣、イオン性残渣及び
多孔の凹凸形状を持つ樹脂表面層を除去する方法は、例
えば研磨等が考えられる。しかし、導体回路間が狭いと
ころでは、導体回路近傍の残渣除去が不完全となり、ま
た、研磨法によると導体金属も同時に削られるため、研
磨により削られた導体粉が逆に絶縁樹脂上に付着する可
能性もある。したがって、研磨による物理的除去方法
は、対処療法的には利用できても本質的対策とはなり得
ない。As a method for removing a metal residue, an ionic residue, and a resin surface layer having a porous uneven shape on the roughened surface, for example, polishing can be considered. However, where the space between conductor circuits is narrow, residue removal near the conductor circuits is incomplete, and the polishing method also removes the conductor metal at the same time, so the conductor powder removed by polishing adheres to the insulating resin. There is also a possibility. Therefore, the physical removal method by polishing cannot be an essential countermeasure even if it can be used for coping.
【0007】本発明の目的は、第一に導体回路間の線間
絶縁性に優れた、信頼性の高い多層配線基板の製造方法
を提供すること、第二に最表面導体回路間隔が狭い場合
でもめっき異常析出がなく、高歩留まりで表面メタライ
ズが可能な多層配線基板の製造方法を提供することにあ
る。It is an object of the present invention to firstly provide a method for manufacturing a highly reliable multilayer wiring board having excellent line insulation between conductor circuits, and secondly, to provide a method in which the interval between outermost conductor circuits is narrow. However, it is an object of the present invention to provide a method for manufacturing a multilayer wiring board which does not cause abnormal plating deposition and can perform surface metallization at a high yield.
【0008】[0008]
【課題を解決するための手段】上記目的は、導体回路形
成後に、導体回路間の絶縁樹脂表面をエッチングにより
除去することによって達成される。この場合のエッチン
グ方法は、ドライプロセス及びウエットプロセスの両方
が使用できる。ドライプロセスは、O2プラズマ処理あ
るいはUV/O3処理を施した後、水洗工程を通すこと
が有効である。上記O2プラズマ処理は、純水O2による
プラズマ処理の他、 O2に種々の割合でCF4を混ぜた
混合ガスによるプラズマ処理も可能である。The above object is achieved by removing the surface of the insulating resin between the conductor circuits by etching after the formation of the conductor circuits. In this case, as the etching method, both a dry process and a wet process can be used. In the dry process, it is effective to pass a water washing step after performing an O 2 plasma treatment or a UV / O 3 treatment. The O 2 plasma treatment can be a plasma treatment using pure water O 2 or a plasma treatment using a mixed gas of O 2 and CF 4 mixed at various ratios.
【0009】O2プラズマ処理あるいはUV/O3処理を
施すと、化学的に極めて活性な原子状酸素を含む活性種
が生成され、この活性種との酸化反応により絶縁樹脂中
の有機物の分解が進む結果、絶縁膜表面がエッチングさ
れる。この際、絶縁膜表面凹部に存在する金属エッチン
グ残渣(下地導電膜形成時の触媒Pd及び回路形成後の
銅エッチング残り)あるいはイオン性残渣は、活性種と
反応しないために絶縁樹脂表面、特に絶縁膜中の無機フ
ィラ上に濃縮されて残る。しかし、O2プラズマ処理あ
るいはUV/O3処理により絶縁樹脂表面は親水化され
ているために、次の水洗工程でフィラの残渣層は除去さ
れ、さらにフィラ残渣層とともに金属残渣やイオン性残
渣も一緒に除去される。すなわち、O2プラズマ処理あ
るいは、UV/O3後の導体間絶縁樹脂は、絶縁樹脂を
粗化する前の樹脂表面とほぼ同じ状態になっている。し
たがって、恒温恒湿試験中に水蒸気が浸透・吸湿しやす
い多孔の凹凸形状を持つ樹脂表面層及び金属残渣、イオ
ン性残渣がないために導体回路近くでの金属溶解すなわ
ちマイグレーションの促進が抑制される結果、導体回路
間の線間絶縁性が向上する。When the O 2 plasma treatment or the UV / O 3 treatment is performed, a chemically extremely active species containing atomic oxygen is generated, and an oxidation reaction with the active species decomposes organic matter in the insulating resin. As a result, the insulating film surface is etched. At this time, the metal etching residue (catalyst Pd at the time of forming the underlying conductive film and the copper etching residue after the formation of the circuit) or the ionic residue existing in the concave portion of the insulating film surface does not react with the active species. It remains concentrated on the inorganic filler in the membrane. However, since the insulating resin surface has been hydrophilized by the O 2 plasma treatment or the UV / O 3 treatment, the filler residue layer is removed in the next washing step, and the metal residue and the ionic residue are removed together with the filler residue layer. Removed together. In other words, the inter-conductor insulating resin after the O 2 plasma treatment or UV / O 3 is almost in the same state as the resin surface before the insulating resin is roughened. Therefore, since there is no resin surface layer having a porous unevenness and a metal residue and an ionic residue that are easy for water vapor to penetrate and absorb moisture during the constant temperature and humidity test, promotion of metal dissolution, that is, migration, near the conductor circuit is suppressed. As a result, the insulation between lines between the conductor circuits is improved.
【0010】また、めっき異常析出に関しても導体回路
間の金属残渣がなくなるとともに、ニッケルめっき時に
発生する水素をトラップしやすい多孔の凹凸形状を持つ
樹脂表面層がなく、さらに、プラズマ処理によって樹脂
表面に付加された−OOH等によって一部活性水素が酸
化されるために導体回路間へのニッケルの析出が著しく
抑制できる。[0010] In addition, with regard to abnormal plating deposition, there is no metal residue between the conductor circuits, and there is no resin surface layer having a porous uneven shape that easily traps hydrogen generated during nickel plating. Since active hydrogen is partially oxidized by the added -OOH or the like, nickel deposition between conductor circuits can be significantly suppressed.
【0011】一方、ウエットエッチは、例えば、クロム
酸、クロム酸塩、重クロム酸塩、マンガン酸塩、過マン
ガン酸塩等の酸化力の大きい酸化剤を含有した溶液を用
いて軽くエッチングすることが有効である。この場合、
多孔の凹凸形状を持つ樹脂表面層が溶解除去されるとと
もに絶縁膜表面凹部に存在する金属エッチング残渣(下
地導電膜形成時の触媒Pd及び回路形成後の銅エッチン
グ残り)も除去される結果、導体回路間の線間絶縁性が
向上するとともに、導体回路表面メタライズの際の導体
間めっき析出を抑制できる。ただし、処理時間が長いと
新たに多孔の凹凸形状を持つ樹脂表面層が形成されて導
体回路間の線間絶縁性は低下する。On the other hand, wet etching is performed by lightly etching using a solution containing an oxidizing agent having a high oxidizing power such as chromate, chromate, dichromate, manganate, and permanganate. Is valid. in this case,
As a result, the resin surface layer having the porous irregularities is dissolved and removed, and the metal etching residue (catalyst Pd when the underlying conductive film is formed and copper etching residue after the circuit is formed) existing in the concave portion on the surface of the insulating film is also removed. The interline insulation between the circuits is improved, and the deposition of plating between conductors at the time of metallizing the surface of the conductor circuit can be suppressed. However, if the processing time is long, a resin surface layer having a porous uneven shape is newly formed, and line insulation between the conductor circuits is reduced.
【0012】導体回路間の絶縁樹脂表面を除去する方法
は、ドライプロセス及びウエットプロセスの両方を併用
することももちろん可能である。また、本発明は、層間
絶縁膜として感光性樹脂を用いたビルドアップ法に限ら
ず、層間絶縁膜として熱硬化性樹脂を用いレーザによっ
てビアホールを形成するビルドアップ法等、およそ導体
回路との接着をとるために絶縁樹脂を粗化する工程を含
むビルドアップ法全てに適用することができる。As a method of removing the insulating resin surface between the conductor circuits, it is of course possible to use both a dry process and a wet process. In addition, the present invention is not limited to the build-up method using a photosensitive resin as an interlayer insulating film, but may be a method of forming a via hole by a laser using a thermosetting resin as an interlayer insulating film. The method can be applied to all the build-up methods including a step of roughening the insulating resin in order to reduce the cost.
【0013】[0013]
【発明の実施の形態】以下に本発明に係る多層配線基板
の製造方法の一実施例を図1に従って示し、本発明をさ
らに具体的に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for manufacturing a multilayer wiring board according to the present invention will be described below with reference to FIG.
【0014】(実施例1)図1(a)に示す配線基板1
00として、ガラス布基材にエポキシ樹脂を含浸固化
し、その両面に銅箔を張り合わせた積層板(銅箔厚さ1
8μ)を準備し、銅箔に予め周知の方法により第一の配
線層として回路パターン101形成したものを試料基板
とした。(Embodiment 1) Wiring board 1 shown in FIG.
00, a glass cloth substrate was impregnated with epoxy resin and solidified, and copper foil was adhered on both sides of the laminate (copper foil thickness 1).
8 μ) was prepared, and a circuit board 101 formed as a first wiring layer on a copper foil in advance by a known method was used as a sample substrate.
【0015】次いで、図1(b)に示すように、この配
線基板上に絶縁層102をスプレコータにより塗布形成
した(約50μ)。用いた絶縁樹脂は、感光性樹脂組成
物で、(イ)〜(ハ)と適量の溶剤(エチルセロソル
ブ)を混合し、80℃で30分間加熱撹拌した後、常温
で他の成分(ニ)〜(チ)を混合して三本ロールにて混
練することにより得た。Next, as shown in FIG. 1B, an insulating layer 102 was formed on the wiring substrate by applying a spray coater (about 50 μm). The insulating resin used was a photosensitive resin composition, which was obtained by mixing (a) to (c) and an appropriate amount of a solvent (ethyl cellosolve), heating and stirring at 80 ° C. for 30 minutes, and then heating the other components (d) at room temperature. To (H) and kneaded with a three-roll mill.
【0016】 (イ)ジアリルフタレート樹脂 100g (ロ)エポキシ樹脂(エピコート828) 30g (ハ)ペンタエリスリトールトリアクリレート 20g (ニ)ベンゾインイソプロピルエーテル 4g (ホ)ジシアンジアミド 4g (ヘ)2,4−ジアミノ−6−[2´−メチルイミダゾリル− (1´)]−エチル−s−トリアジン 1g (ト)微粒子シリカ 20g (チ)その他(塗布特性向上のための添加剤) 適量 次に、図1(c)に示すように、ビアホールのパターン
が形成されたネガマスクを介して400W高圧水銀ラン
プを用い、2分間UV光で露光し、現像により所望部に
ビアホール103を形成した。(A) diallyl phthalate resin 100 g (b) epoxy resin (Epicoat 828) 30 g (c) pentaerythritol triacrylate 20 g (d) benzoin isopropyl ether 4 g (e) dicyandiamide 4 g (f) 2,4-diamino-6 -[2'-Methylimidazolyl- (1 ')]-ethyl-s-triazine 1g (g) Fine particle silica 20g (h) Others (additives for improving coating characteristics) Proper amount Next, FIG. As shown in the drawing, a 400 W high-pressure mercury lamp was used for exposure to UV light for 2 minutes through a negative mask on which a via hole pattern was formed, and a via hole 103 was formed in a desired portion by development.
【0017】続いて、図1(d)に示すように、絶縁樹
脂層102と後工程の下地導電膜との接着強度を確保す
るために、樹脂層102の表面粗化処理を行い、粗化面
102´を形成した。粗化液は、過マンガン酸カリウム
溶液を用い、この液に10〜20分浸漬した後、塩酸ヒ
ドロキシルアミンで、二酸化マンガンを中和した。Subsequently, as shown in FIG. 1D, the surface of the resin layer 102 is subjected to a surface roughening treatment in order to secure an adhesive strength between the insulating resin layer 102 and the underlying conductive film in a later step. The surface 102 'was formed. As a roughening solution, a potassium permanganate solution was used, immersed in this solution for 10 to 20 minutes, and then manganese dioxide was neutralized with hydroxylamine hydrochloride.
【0018】さらに、図1(e)に示すように、下地導
電膜104をめっき処理で形成する前処理として、基板
の粗化層102´をSn,Pd系の触媒液に浸漬して活
性化し、無電解銅めっきにより下地導電膜104を形成
した。その後、基板洗浄による電気銅めっきの前処理工
程を経て、厚付け電気銅めっきを施し、図1(f)に図
示されるめっき導電膜105を形成した。Further, as shown in FIG. 1E, as a pretreatment for forming the underlying conductive film 104 by plating, the roughened layer 102 'of the substrate is activated by immersing it in a Sn, Pd-based catalyst solution. The underlying conductive film 104 was formed by electroless copper plating. Thereafter, through a pretreatment step of electrolytic copper plating by washing the substrate, thick copper electroplating was performed to form a plated conductive film 105 shown in FIG. 1 (f).
【0019】次いで、図1(g)に示すように、選択エ
ッチ法により、めっき導電膜(104,105)の配線
パターン化を行った。すなわち、常法により基板のめっ
き導電膜105上に感光性エッチングドライフィルムを
ラミネートし、所定の回路パターンマスクを介して露光
した後、現像、エッチング、剥離の工程を通して樹脂上
に幅約100μの回路(104´,105´の二層構
造)を形成し、第二の配線層とした。Next, as shown in FIG. 1 (g), wiring patterns of the plated conductive films (104, 105) were formed by a selective etching method. That is, a photosensitive etching dry film is laminated on the plating conductive film 105 of the substrate by a conventional method, and after being exposed through a predetermined circuit pattern mask, a circuit having a width of about 100 μm is formed on the resin through development, etching, and peeling steps. (A two-layer structure of 104 ′ and 105 ′) was formed as a second wiring layer.
【0020】次に、図1(h)に示すように導体回路を
形成した基板に対し、プラズマエッチングを行った。エ
ッチングガスは、酸素を用いた。用いたドライエッチン
グ装置及び処理条件を下記に示す。Next, as shown in FIG. 1 (h), the substrate on which the conductor circuit was formed was subjected to plasma etching. Oxygen was used as an etching gas. The dry etching apparatus and processing conditions used are shown below.
【0021】 装置 :O2プラズマアッシャー(日電アネルバ
製DEM−451M) O2流量 :50sccm ガス圧 :10pa RFパワー :300W 自己バイアス:−710V 処理時間 :5〜30分 プラズマエッチング後は、絶縁樹脂表面にフィラの残渣
層が残るので、水洗を行うことにより残渣層を除去し
た。水洗は、流水中で2分行った。Apparatus: O 2 plasma asher (DEM-451M manufactured by Nidec Anelva) O 2 flow rate: 50 sccm Gas pressure: 10 pa RF power: 300 W Self-bias: −710 V Processing time: 5 to 30 minutes After plasma etching, the insulating resin surface The residue layer was removed by washing with water. Washing was performed in running water for 2 minutes.
【0022】この後、第三の配線層形成に関しても、図
1(b)の絶縁層102の形成から図1(g)の第二配
線層を形成する工程までと同様の作業を行い、第三配線
層形成後に最外層絶縁樹脂表面を上記と同様の条件でプ
ラズマエッチングを行い、最後にソルダレジストを塗
布、露光、現像して三層構造の多層配線基板を製造し
た。Thereafter, with respect to the formation of the third wiring layer, the same operations as those from the formation of the insulating layer 102 in FIG. 1B to the step of forming the second wiring layer in FIG. After the formation of the three wiring layers, the outermost insulating resin surface was subjected to plasma etching under the same conditions as described above, and finally, a solder resist was applied, exposed, and developed to produce a multilayer wiring board having a three-layer structure.
【0023】(実施例2)実施例1と同様の感光性絶縁
樹脂を用い、実施例1と同様の工程で多層配線基板を製
造した。実施例1と異なる点は、導体回路形成後の導体
回路間樹脂表面のエッチングとして、UV/O3処理を
施したことである。処理条件を下記に示す。Example 2 A multilayer wiring board was manufactured using the same photosensitive insulating resin as in Example 1 and in the same process as in Example 1. The difference from the first embodiment is that UV / O 3 treatment is performed as etching of the resin surface between the conductor circuits after the formation of the conductor circuits. The processing conditions are shown below.
【0024】 O3流量 :8NL/min 一時電流 :5A 温度 :160±10℃ ランプからの距離:15cm 処理時間 :5〜20分 実施例1及び実施例2の方法で製造した本発明の多層配
線基板について絶縁特性評価を行った。絶縁特性評価
は、恒温恒湿槽中で50Vの電圧を印可して500時間
経過後の外層導体回路間(150μ)の絶縁抵抗を測定
することで行った。なお、恒温恒湿試験環境は、温度6
5℃、湿度95%で行った。また、比較のために、導体
回路形成後に導体回路間樹脂表面に対し、O2プラズマ
処理及びUV/O3処理を一切施していない基板につい
ても同様の測定を行った。O 3 flow rate: 8 NL / min Temporary current: 5 A Temperature: 160 ± 10 ° C. Distance from lamp: 15 cm Processing time: 5 to 20 minutes Multilayer wiring of the present invention manufactured by the method of Example 1 and Example 2 The insulation characteristics of the substrate were evaluated. The insulation characteristics were evaluated by applying a voltage of 50 V in a thermo-hygrostat and measuring the insulation resistance between the outer conductor circuits (150 μ) after 500 hours. The temperature and humidity test environment was set at a temperature of 6
The test was performed at 5 ° C. and 95% humidity. For comparison, the same measurement was performed on a substrate on which no O 2 plasma treatment or UV / O 3 treatment was applied to the resin surface between the conductor circuits after the formation of the conductor circuits.
【0025】実施例1及び実施例2の多層配線基板は、
試験前の初期値が1×107メグオーム以上であったの
に対して、恒温恒湿試験500時間後でも1×106メ
グオーム以上の抵抗を保持していた。これに対し、導体
回路形成後に導体回路間樹脂表面に対し、O2プラズマ
処理及びUV/O3処理を一切施していない場合、恒温
恒湿試験500時間後の抵抗値が1×102以下となる
基板が多発した。このことから、本発明に係る多層配線
基板は、従来法による基板よりも優れた絶縁特性を示す
ことがわかる。The multilayer wiring boards of the first and second embodiments are
While the initial value before the test was 1 × 10 7 megohms or more, the resistance was kept at 1 × 10 6 megohms or more even after 500 hours of the constant temperature and humidity test. On the other hand, when no O 2 plasma treatment or UV / O 3 treatment is applied to the resin surface between the conductor circuits after the formation of the conductor circuits, the resistance value after 500 hours of the constant temperature and humidity test is 1 × 10 2 or less. There were many substrates. From this, it is understood that the multilayer wiring board according to the present invention exhibits better insulating properties than the board manufactured by the conventional method.
【0026】(実施例3)実施例1の方法で製造した基
板を使用し、最外層導体回路の表面メタライズとして無
電解ニッケルめっき及び置換金めっきを施した。使用し
ためっき液及びめっき条件は、次の通りである。Example 3 The substrate manufactured by the method of Example 1 was used, and electroless nickel plating and displacement gold plating were applied as surface metallization of the outermost conductor circuit. The plating solution and plating conditions used are as follows.
【0027】 (無電解ニッケルめっき) ICPニコロンU(Ni−P) 奥野製薬工業社製 液温 85℃ めっき時間 20分 (置換金めっき) レクトロレス プレップ 日本エレクトロプレイティング・エンジニヤ ース社製 液温 90℃ めっき時間 20分 無電解ニッケルめっき後及び置換金めっき後に基板表面
を金属顕微鏡にて観察したところ、最外層導体回路間の
もっとも狭い場所(150μ)でもショートの発生は認
められなかった。これに対して、導体回路形成後にO2
プラズマ処理を施していない基板では、ニッケルめっき
後に最狭小導体回路間でのショート発生が認められたこ
とから、本実施例に示す製造法の有効性が確認できた。(Electroless Nickel Plating) ICP Nicoron U (Ni-P) manufactured by Okuno Pharmaceutical Co., Ltd. Liquid temperature 85 ° C. Plating time 20 minutes (displacement gold plating) Lectroless Prep Liquid temperature 90 manufactured by Nippon Electroplating Engineers Co., Ltd. C. Plating time: 20 minutes After the electroless nickel plating and the displacement gold plating, the surface of the substrate was observed with a metallographic microscope. As a result, no short circuit was observed even at the narrowest portion (150 μ) between the outermost conductor circuits. In contrast, O 2 after the conductor circuit formation
On the substrate not subjected to the plasma treatment, occurrence of a short circuit between the narrowest conductor circuits after nickel plating was observed, so that the effectiveness of the manufacturing method shown in this example was confirmed.
【0028】(実施例4)実施例2の方法で製造した基
板を使用し、最外層導体回路の表面メタライズとして無
電解ニッケルめっき及び置換金めっきを施した。使用し
ためっき液及びめっき条件は、実施例3に記載の通りで
ある。Example 4 The substrate manufactured by the method of Example 2 was used, and electroless nickel plating and displacement gold plating were applied as a surface metallization of the outermost conductor circuit. The plating solution and plating conditions used are as described in Example 3.
【0029】無電解ニッケルめっき後及び置換金めっき
後に基板表面を金属顕微鏡にて観察したところ、最外層
導体回路間のもっとも狭い場所(150μ)でもショー
トの発生は認められなかった。When the surface of the substrate was observed with a metallographic microscope after electroless nickel plating and displacement gold plating, no occurrence of short circuit was observed even in the narrowest portion (150 μm) between the outermost conductor circuits.
【0030】(実施例5)実施例1と同様の感光性絶縁
樹脂を用い、実施例1と同様の工程で多層配線基板を製
造した。実施例1と異なる点は、最外層導体回路形成後
の導体回路間樹脂表面のエッチングとして、過マンガン
酸カリウム溶液を用いたことである。処理液の組成及び
処理条件を下記に示す。Example 5 Using the same photosensitive insulating resin as in Example 1, a multilayer wiring board was manufactured in the same steps as in Example 1. The difference from the first embodiment is that a potassium permanganate solution is used for etching the resin surface between the conductor circuits after the outermost conductor circuit is formed. The composition of the processing solution and the processing conditions are shown below.
【0031】 組成 :過マンガン酸カリウム0.1〜0.5mol/l(リットル) 水酸化ナトリウム 0.2〜0.4mol/l(リットル) 液温 :50〜90℃ 処理時間:3〜5分 本方法で製造した基板を使用し、最外層導体回路の表面
メタライズとして無電解ニッケルめっき及び置換金めっ
きを施した。使用しためっき液及びめっき条件は、実施
例3に記載の通りである。Composition: potassium permanganate 0.1-0.5 mol / l (liter) Sodium hydroxide 0.2-0.4 mol / l (liter) Liquid temperature: 50-90 ° C. Processing time: 3-5 minutes Using the substrate manufactured by this method, electroless nickel plating and displacement gold plating were applied as surface metallization of the outermost conductor circuit. The plating solution and plating conditions used are as described in Example 3.
【0032】無電解ニッケルめっき後及び置換金めっき
後に基板表面を金属顕微鏡にて観察したところ、最外層
導体回路間のもっとも狭い場所(150μ)でもショー
トの発生は認められなかった。When the surface of the substrate was observed with a metallographic microscope after electroless nickel plating and after substitutional gold plating, no short circuit was observed even in the narrowest portion (150 μm) between the outermost conductor circuits.
【0033】[0033]
【発明の効果】本発明によれば、導体回路間の線間絶縁
特性に優れた、信頼性の高いビルドアップ多層配線基板
を容易に製造することができる。さらに、本発明によれ
ば、最表面導体回路間隔が狭い場合でもめっき導体回路
間へのめっき異常析出がなく、高歩留まりで表面メタラ
イズが可能なビルドアップ基板を製造できる。According to the present invention, a highly reliable build-up multilayer wiring board having excellent line insulation properties between conductor circuits can be easily manufactured. Further, according to the present invention, a build-up substrate capable of performing high-yield surface metallization with no abnormal deposition of plating between the plated conductor circuits even when the interval between the outermost conductor circuits is small can be manufactured.
【図1】本発明の一実施例となる多層配線基板の製造工
程を示す断面図。FIG. 1 is a sectional view showing a manufacturing process of a multilayer wiring board according to one embodiment of the present invention.
100…両面銅張り積層板、 101…回路パターン、 102…感光性絶縁樹脂層、 102´…表面粗化された絶縁樹脂層、 103…バイヤホール、 104…下地導電膜、 104´…回路パターン、 105…めっき導電膜、 105´…回路パターン、 106…回路パターンの間隙。 100: double-sided copper-clad laminate, 101: circuit pattern, 102: photosensitive insulating resin layer, 102 ': surface-roughened insulating resin layer, 103: via hole, 104: underlying conductive film, 104': circuit pattern, 105: plating conductive film, 105 ′: circuit pattern, 106: gap between circuit patterns.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 渡部 真貴雄 神奈川県横浜市戸塚区戸塚町216番地株式 会社日立製作所情報通信事業部内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Makio Watanabe 216 Totsukacho, Totsuka-ku, Yokohama-shi, Kanagawa Pref.
Claims (8)
を交互に繰り返し、ビルドアップ方式により多層配線基
板を製造する方法において、導体回路形成後に導体回路
間の絶縁樹脂表面をエッチングにより除去することを特
徴とする多層配線基板の製造方法。In a method of manufacturing a multilayer wiring board by a build-up method by alternately repeating a conductive circuit forming step and an interlayer insulating film forming step, an insulating resin surface between the conductive circuits is removed by etching after forming the conductive circuits. A method for manufacturing a multilayer wiring board, comprising:
する工程が、ドライプロセスを用いて有機成分を除去す
るとともに樹脂表面の無機成分を濃縮する工程と、水洗
によって上記濃縮無機成分を除去する工程とから成る請
求項1に記載の多層配線基板の製造方法。2. The step of removing the surface of the insulating resin by etching includes the steps of removing an organic component using a dry process and concentrating an inorganic component on the resin surface, and a step of removing the concentrated inorganic component by washing with water. 2. The method for manufacturing a multilayer wiring board according to claim 1, comprising:
用いた請求項2に記載の多層配線基板の製造方法。3. The method according to claim 2 , wherein O 2 plasma is used as said dry process.
いた請求項2に記載の多層配線基板の製造方法。4. The method according to claim 2, wherein UV / O 3 is used as said dry process.
グする方法として酸化力の大きな酸化剤を含有する溶液
を用い、絶縁樹脂表面を軽くエッチング処理した後、中
和処理する工程を通す請求項1に記載の多層配線基板の
製造方法。5. A method for etching an insulating resin surface according to claim 1, wherein a solution containing an oxidizing agent having a large oxidizing power is used, and the insulating resin surface is lightly etched and then subjected to a neutralization process. Item 2. The method for manufacturing a multilayer wiring board according to Item 1.
クロム酸塩、重クロム酸塩、マンガン酸塩、過マンガン
酸塩のいずれかから成る請求項4に記載の多層配線基板
の製造方法。6. The oxidizing agent having a large oxidizing power is chromic acid,
5. The method for manufacturing a multilayer wiring board according to claim 4, comprising a chromate, a dichromate, a manganate, or a permanganate.
も室温で固形の多官能不飽和化合物、エポキシ樹脂、ア
クリレートモノマ、光重合開始剤、アミン系の熱硬化剤
及び無機フィラーから成る感光性絶縁樹脂組成物で構成
して成る多層配線基板の製造方法。7. A photosensitive material comprising the interlayer insulating film according to claim 1 comprising a polyfunctional unsaturated compound which is solid at least at room temperature, an epoxy resin, an acrylate monomer, a photopolymerization initiator, an amine-based thermosetting agent, and an inorganic filler. A method for producing a multilayer wiring board comprising a conductive insulating resin composition.
も不飽和基を付加反応させた複数官能の多官能固形エポ
キシ樹脂、アクリレートモノマ、光重合開始剤、アミン
系の熱硬化剤及び無機フィラから成る感光性絶縁樹脂組
成物で構成して成る多層配線基板の製造方法。8. An interlayer insulating film according to claim 1, wherein a polyfunctional solid epoxy resin having a plurality of functional groups obtained by addition reaction of at least an unsaturated group, an acrylate monomer, a photopolymerization initiator, an amine-based thermosetting agent, and an inorganic material. A method for producing a multilayer wiring board comprising a photosensitive insulating resin composition comprising a filler.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7497897A JPH10270859A (en) | 1997-03-27 | 1997-03-27 | Method for manufacturing multilayer wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7497897A JPH10270859A (en) | 1997-03-27 | 1997-03-27 | Method for manufacturing multilayer wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10270859A true JPH10270859A (en) | 1998-10-09 |
Family
ID=13562900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7497897A Pending JPH10270859A (en) | 1997-03-27 | 1997-03-27 | Method for manufacturing multilayer wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10270859A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100361284C (en) * | 2001-10-19 | 2008-01-09 | 全懋精密科技股份有限公司 | Substrate structure for integrated circuit packaging and manufacturing method thereof |
-
1997
- 1997-03-27 JP JP7497897A patent/JPH10270859A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100361284C (en) * | 2001-10-19 | 2008-01-09 | 全懋精密科技股份有限公司 | Substrate structure for integrated circuit packaging and manufacturing method thereof |
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