JPH10273395A5 - - Google Patents

Info

Publication number: JPH10273395A5
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP1997076154A

Other versions

JPH10273395A (ja

JP3879784B2 (ja

Filing date

1997-03-27

Publication date

2004-09-16

1997-03-27 Application filed filed Critical

1997-03-27 Priority to JP07615497A priority Critical patent/JP3879784B2/ja

1997-03-27 Priority claimed from JP07615497A external-priority patent/JP3879784B2/ja

1998-03-26 Priority to KR1019980010505A priority patent/KR19980080718A/ko

1998-03-26 Priority to US09/048,050 priority patent/US6174463B1/en

1998-09-09 Priority to US09/149,712 priority patent/US6106616A/en

1998-10-13 Publication of JPH10273395A publication Critical patent/JPH10273395A/ja

2004-09-16 Publication of JPH10273395A5 publication Critical patent/JPH10273395A5/ja

2007-02-14 Application granted granted Critical

2007-02-14 Publication of JP3879784B2 publication Critical patent/JP3879784B2/ja

2017-03-27 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

JP07615497A 1997-03-27 1997-03-27 層状結晶構造酸化物およびそれを用いたメモリ素子 Expired - Fee Related JP3879784B2 (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP07615497A JP3879784B2 (ja)	1997-03-27	1997-03-27	層状結晶構造酸化物およびそれを用いたメモリ素子
KR1019980010505A KR19980080718A (ko)	1997-03-27	1998-03-26	층상 결정 구조 산화물, 그의 제조 방법 및 그를 사용한 메모리소자
US09/048,050 US6174463B1 (en)	1997-03-27	1998-03-26	Layer crystal structure oxide, production method thereof and memory element using the same
US09/149,712 US6106616A (en)	1997-03-27	1998-09-09	Layer crystal structure oxide, production method thereof, and memory element using the same

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP07615497A JP3879784B2 (ja)	1997-03-27	1997-03-27	層状結晶構造酸化物およびそれを用いたメモリ素子

Publications (3)

Publication Number	Publication Date
JPH10273395A JPH10273395A (ja)	1998-10-13
JPH10273395A5 true JPH10273395A5 (ja)	2004-09-16
JP3879784B2 JP3879784B2 (ja)	2007-02-14

Family

ID=13597126

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP07615497A Expired - Fee Related JP3879784B2 (ja)	1997-03-27	1997-03-27	層状結晶構造酸化物およびそれを用いたメモリ素子

Country Status (1)

Country	Link
JP (1)	JP3879784B2 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4604414B2 (ja) *	2001-07-18	2011-01-05	ソニー株式会社	強誘電体型不揮発性半導体メモリ及びその製造方法

1997
- 1997-03-27 JP JP07615497A patent/JP3879784B2/ja not_active Expired - Fee Related

Publication	Publication Date	Title
BE2018C032I2 (ja)	2018-10-15
CH0944937H2 (ja)	2016-01-15
BE2013C047I2 (ja)	2018-05-09
BR9700653A (ja)	1998-12-15
BR9701757A (ja)	1998-11-03
IN187305B (ja)	2002-03-23
CN3054902S (ja)	1997-02-19
CN3055123S (ja)	1997-02-26
BY4349C1 (ja)	2002-03-30
CN3052972S (ja)	1997-01-01
CN3053002S (ja)	1997-01-01
CN3053170S (ja)	1997-01-01
CN3053248S (ja)	1997-01-08
CN3053500S (ja)	1997-01-15
CN3053524S (ja)	1997-01-15
CN3053525S (ja)	1997-01-15
CN3053852S (ja)	1997-01-22
CN3053995S (ja)	1997-01-29
CN3054099S (ja)	1997-01-29
CN3054162S (ja)	1997-01-29
CN3054556S (ja)	1997-02-12
CN3054602S (ja)	1997-02-12
CN3054752S (ja)	1997-02-19
CN3054753S (ja)	1997-02-19
CN3056251S (ja)	1997-03-26