JPH10275680A - Organic EL device - Google Patents
Organic EL deviceInfo
- Publication number
- JPH10275680A JPH10275680A JP9079597A JP7959797A JPH10275680A JP H10275680 A JPH10275680 A JP H10275680A JP 9079597 A JP9079597 A JP 9079597A JP 7959797 A JP7959797 A JP 7959797A JP H10275680 A JPH10275680 A JP H10275680A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- organic
- light emitting
- metal
- emitting layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims abstract description 95
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 239000011241 protective layer Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000011368 organic material Substances 0.000 claims description 8
- 239000012044 organic layer Substances 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 2
- 230000005525 hole transport Effects 0.000 abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 abstract description 8
- 239000001301 oxygen Substances 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 5
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- -1 quinolinol aluminum Chemical compound 0.000 description 2
- 230000000191 radiation effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/87—Arrangements for heating or cooling
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】
【課題】 素子への酸素水分の拡散を防止すると共に、
放熱性を高める。
【解決手段】 ガラス基板１０上に透明電極１２、正孔
輸送層１４、発光層１６、金属陰極１８を形成し、正孔
輸送層１４、発光層１６、金属陰極１８を覆って保護層
２０を形成する。保護層２０は、絶縁層２０ａと金属層
２０ｂの多層構造となっている。特に、金属層２０を保
護層中に有しているため、湿気の素子への進入を防止
し、かつ放熱をよくすることができる。
(57) [Summary] [PROBLEMS] To prevent diffusion of oxygen and moisture into an element,
Improve heat dissipation. SOLUTION: A transparent electrode 12, a hole transport layer 14, a light emitting layer 16, and a metal cathode 18 are formed on a glass substrate 10, and a protective layer 20 is formed to cover the hole transport layer 14, the light emitting layer 16, and the metal cathode 18. Form. The protective layer 20 has a multilayer structure of an insulating layer 20a and a metal layer 20b. In particular, since the metal layer 20 is provided in the protective layer, it is possible to prevent moisture from entering the element and improve heat dissipation.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、一対の電極間に有
機材料からなる発光層を狭持し、両電極からキャリアを
発光層に注入することによって発光層を発光させる有機
ＥＬ素子、特にその保護層の構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic EL device in which a light emitting layer made of an organic material is sandwiched between a pair of electrodes, and a carrier is injected from both electrodes into the light emitting layer to make the light emitting layer emit light. It relates to the structure of the protective layer.
【０００２】[0002]
【従来の技術】有機ＥＬ素子を利用した平面ディスプレ
イは、次世代のディスプレイとして大きな注目を浴びて
おり、これについての研究開発が盛んに行われている。
特に、有機ＥＬ素子を利用すれば、直流低電圧駆動、高
視野角、自発光などの特徴を有する高解像度ディスプレ
イが実現可能であり、その利用価値は非常に高いと考え
られている。2. Description of the Related Art A flat display using an organic EL element has received a great deal of attention as a next-generation display, and R & D on this is being actively pursued.
In particular, if an organic EL element is used, a high-resolution display having features such as direct-current low-voltage driving, a high viewing angle, and self-emission can be realized, and its use value is considered to be extremely high.
【０００３】この有機ＥＬ素子は、例えばガラス基板上
に、透明電極（陽極）／正孔輸送層／発光層／金属電極
（陰極）を積層形成した構成を有している。また、陽極
には仕事関数の大きな物質が用いられ、陰極には仕事関
数の小さな物質が用いられる。そして、正孔輸送層及び
発光層に有機材料が用いられ、両電極から注入される正
孔と、電子が発光層において、再結合することによって
発光する。[0003] This organic EL device has a structure in which a transparent electrode (anode) / a hole transport layer / a light emitting layer / a metal electrode (cathode) are laminated on a glass substrate, for example. A material having a large work function is used for the anode, and a material having a small work function is used for the cathode. Then, an organic material is used for the hole transport layer and the light emitting layer, and the holes injected from both electrodes and the electrons recombine in the light emitting layer to emit light.
【０００４】ここで、正孔輸送層や発光層に利用する固
体有機材料は、水分や、酸素などに侵されやすく、大気
中で有機ＥＬ素子を駆動するとその発光特性が急激に劣
化する。さらに、固体有機材料上に設けられる電極が酸
化されないようにする必要もある。従って、有機ＥＬ素
子では、有機や無機の保護層を設け、素子を封止して大
気から隔離する必要がある。例えば、特開平７−１９２
８６７号公報には、各種の封止方法についての開示があ
る。[0004] Here, the solid organic material used for the hole transport layer and the light emitting layer is easily attacked by moisture, oxygen, and the like, and when the organic EL element is driven in the air, the light emitting characteristics are rapidly deteriorated. Further, it is necessary to prevent the electrodes provided on the solid organic material from being oxidized. Therefore, in an organic EL element, it is necessary to provide an organic or inorganic protective layer, seal the element, and isolate it from the atmosphere. For example, JP-A-7-192
No. 867 discloses various sealing methods.
【０００５】[0005]
【発明が解決しようとする課題】このように、保護層を
設けることによって、有機ＥＬ素子の寿命を延ばすこと
ができるが、十分な酸化防止や水分の侵入防止を図る
と、放熱性が悪くなってしまうという問題があった。す
なわち、保護層の厚みをあまり厚くすると、素子におい
て発生した熱が十分放熱されなくなり、素子の特性が劣
化してしまうという問題があった。As described above, by providing the protective layer, the life of the organic EL element can be extended, but when sufficient prevention of oxidation and intrusion of moisture is prevented, heat dissipation becomes poor. There was a problem that would. That is, if the thickness of the protective layer is too large, there is a problem that the heat generated in the element cannot be sufficiently dissipated, and the characteristics of the element deteriorate.
【０００６】特に、通常の場合、ＥＬ素子に要求される
輝度は２００ｃｄ／ｍ2程度であり、このための駆動電
流は数ｍＡ／ｃｍ2以下であり、発熱の影響はあまり大
きくない。しかし、有機ＥＬ素子では、１０Ｖの印加で
１０００ｃｄ／ｍ2を超える輝度が得られ、最近の研究
では、発光層へのドーピングによって、輝度はさらに改
善され、１０万ｃｄ／ｍ2の輝度が得られるとの報告も
ある。例えば、有機ＥＬ素子を平面光源として利用する
ことを考えると、数１０００ｃｄ／ｍ2の発光が必要で
あり、それに必要な電流は１００ｍＡ／ｃｍ2以上にな
る。この場合には、素子温度は、１００°Ｃを超えるこ
とになり、輝度の低下や非発光点が発生し、素子の劣化
が起こってしまう。従って、このような高輝度の有機Ｅ
Ｌ素子では、発熱量が大きく、この対策が重要である。
なお、熱による素子の劣化は、発光層などの有機層の構
造変化や電極酸化の熱による加速が原因である。In particular, in the normal case, the luminance required for the EL element is about 200 cd / m 2 , the driving current for this is several mA / cm 2 or less, and the influence of heat generation is not so large. However, in an organic EL device, a luminance exceeding 1000 cd / m 2 can be obtained by applying 10 V. In a recent study, the luminance was further improved by doping the light emitting layer, and a luminance of 100,000 cd / m 2 was obtained. There are reports that this will be done. For example, considering that an organic EL element is used as a flat light source, light emission of several thousand cd / m 2 is required, and the current required for the light emission is 100 mA / cm 2 or more. In this case, the element temperature exceeds 100 ° C., and a decrease in luminance and a non-light-emitting point occur, resulting in deterioration of the element. Therefore, such high-brightness organic E
The L element generates a large amount of heat, and this measure is important.
The deterioration of the element due to heat is caused by a structural change of an organic layer such as a light emitting layer and an acceleration due to heat of electrode oxidation.
【０００７】本発明は、上記課題を解決するためのなさ
れたものであり、十分な封止が行えると共に、放熱特性
のよい有機ＥＬ素子を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and has as its object to provide an organic EL device which can perform sufficient sealing and has good heat radiation characteristics.
【０００８】[0008]
【課題を解決するための手段】本発明は、一対の電極間
に有機材料からなる発光層を狭持し、両電極からキャリ
アを発光層に注入することによって発光層を発光させる
有機ＥＬ素子において、少なくとも一方の電極及び発光
層の外側を覆う保護層であって、有機層と金属層の２層
または無機層と金属層の２層を含む多層構造からなる保
護層を有することを特徴とする。SUMMARY OF THE INVENTION The present invention relates to an organic EL device in which a light emitting layer made of an organic material is sandwiched between a pair of electrodes, and carriers are injected from both electrodes into the light emitting layer to cause the light emitting layer to emit light. A protective layer that covers at least one of the electrodes and the light emitting layer, and has a multilayer structure including two layers of an organic layer and a metal layer or two layers of an inorganic layer and a metal layer. .
【０００９】このように、本発明では、電極及び発光層
を保護層で覆った。これによって、一方の電極（例えば
金属陰極）及び発光層の周囲雰囲気への水分や酸素の拡
散を防止することができ、素子の特性劣化を抑制して長
寿命化を図ることができる。特に、保護層が金属層を含
んでいる。金属層は、非常に緻密な構造を有しており、
酸素や水分の拡散を効果的に防止する。さらに、金属層
としてアルミなど不動態の酸化皮膜を形成するものを利
用することで、酸素の拡散についても効果的に防止でき
る。As described above, in the present invention, the electrode and the light emitting layer are covered with the protective layer. Accordingly, diffusion of moisture or oxygen into the atmosphere around one of the electrodes (for example, a metal cathode) and the light emitting layer can be prevented, and the characteristic deterioration of the element can be suppressed to extend the life. In particular, the protective layer includes a metal layer. The metal layer has a very dense structure,
Effectively prevents diffusion of oxygen and moisture. Further, by using a metal layer such as aluminum which forms a passive oxide film, diffusion of oxygen can be effectively prevented.
【００１０】また、金属層は、熱伝導性が良好であるた
め、素子において発生した熱を効果的に放散し、素子の
加熱を防止することができる。特に、電流量を大きくし
て、発光量を大きくした場合には、素子の発熱量が大き
く、その放熱性に優れていることが重要な要件になる。
本発明によれば、このような大発光量の素子において
も、特性の劣化を最小限にできる。Further, since the metal layer has good thermal conductivity, heat generated in the element can be effectively dissipated, and the element can be prevented from being heated. In particular, when the amount of light is increased by increasing the amount of current, the heat generation of the element is large, and it is an important requirement that the element has excellent heat dissipation.
According to the present invention, deterioration of characteristics can be minimized even in an element having such a large light emission amount.
【００１１】また、電極上に絶縁層を配置すれば、金属
層と陰極とを電気的に絶縁することができる。さらに、
最外側に金属層を配置することにより、放熱効果を十分
大きなものにすることができる。Further, if an insulating layer is disposed on the electrode, the metal layer and the cathode can be electrically insulated. further,
By arranging the metal layer on the outermost side, the heat radiation effect can be made sufficiently large.
【００１２】[0012]
【発明の実施の形態】以下、本発明の実施の形態（以下
実施形態という）について、図面に基づいて説明する。Embodiments of the present invention (hereinafter referred to as embodiments) will be described below with reference to the drawings.
【００１３】図１は、本実施形態に係る有機ＥＬ素子の
構成を示す図である。ガラス基板１０の上面には、透明
電極１２が形成されている。この透明電極１２は、ＩＴ
Ｏ（インジウム・チン・オキサイド）、ＳｎＯ2などが
利用される。この透明電極１２の上に有機材料からなる
正孔輸送層１４、発光層１６が積層形成される。正孔輸
送層１４はＴＰＤ（トリフェニルジアミン）、発光層１
６はＡｌｑ（キノリノールアルミ錯体）等により形成さ
れる。発光層１６の上には、金属陰極１８が形成され
る。この金属陰極１８には、ＭｇＡｇ（９：１）、Ａｌ
Ｌｉ（９．９：０．１）、Ｍａｌｎ（９：１）等が採用
される。FIG. 1 is a diagram showing the configuration of the organic EL device according to the present embodiment. On the upper surface of the glass substrate 10, a transparent electrode 12 is formed. This transparent electrode 12 is made of IT
O (indium tin oxide), SnO 2 or the like is used. On this transparent electrode 12, a hole transport layer 14 and a light emitting layer 16 made of an organic material are laminated. The hole transport layer 14 is made of TPD (triphenyldiamine),
6 is formed of Alq (quinolinol aluminum complex) or the like. A metal cathode 18 is formed on the light emitting layer 16. The metal cathode 18 includes MgAg (9: 1), Al
Li (9.9: 0.1), Maln (9: 1) and the like are adopted.
【００１４】そして、この正孔輸送層１４、発光層１
６、金属陰極１８の側面を含む全体を覆うように、保護
層２０を形成する。この保護層２０は、絶縁層２０ａと
金属層２０ｂの多層層であり、これらが２層ずつ交互に
積層されている。ここで、絶縁層２０ａには正孔輸送層
１４や発光層１６に用いたものと同じ有機物や、その他
低分子、高分子の各種の有機物が利用できる。さらに、
この絶縁層２０ａとして、有機層に代えて、無機層を採
用することも好適である。例えば、ＭｇＦ2などの金属
酸化物や半導体化合物の無機層を利用することができ
る。また、金属層２０ｂにはアルミ用いることができる
が、Ｃｒ等各種の金属も利用可能である。The hole transport layer 14, the light emitting layer 1
6. The protective layer 20 is formed so as to cover the entire surface including the side surfaces of the metal cathode 18. This protective layer 20 is a multilayered layer of an insulating layer 20a and a metal layer 20b, and these are alternately laminated two by two. Here, for the insulating layer 20a, the same organic substances as those used for the hole transport layer 14 and the light emitting layer 16, and various other low molecular and high molecular organic substances can be used. further,
It is also preferable to employ an inorganic layer instead of the organic layer as the insulating layer 20a. For example, an inorganic layer of a metal oxide such as MgF 2 or a semiconductor compound can be used. Aluminum can be used for the metal layer 20b, but various metals such as Cr can also be used.
【００１５】このような有機ＥＬ素子において、透明電
極１２と、金属陰極１８とに電圧を印加することで、両
電極１２、１８より、正孔、電子が注入され、これが発
光層１６において再結合し発光する。本実施形態では、
保護層２０によって、正孔輸送層１４、発光層１６、金
属陰極１８からなる素子部が覆われているため、大気か
らの酸素、水分の内部への拡散が有効に防止され、素子
特性への悪影響を排除することができる。In such an organic EL device, by applying a voltage to the transparent electrode 12 and the metal cathode 18, holes and electrons are injected from the two electrodes 12, 18, which recombine in the light emitting layer 16. And emit light. In this embodiment,
Since the protective layer 20 covers the element portion including the hole transport layer 14, the light emitting layer 16, and the metal cathode 18, diffusion of oxygen and moisture from the atmosphere into the inside is effectively prevented, and the element characteristics are reduced. Adverse effects can be eliminated.
【００１６】特に、本実施形態の素子においては、保護
層２０が金属層２０ｂを含んでいる。金属層２０ｂは、
非常に緻密な構造を有しており、酸素や水分の拡散を効
果的に防止する。特に、金属層２０ｂとしてアルミなど
不動態の酸化皮膜を形成するものを利用することで、酸
素の拡散についても効果的に防止できる。In particular, in the device of the present embodiment, the protective layer 20 includes the metal layer 20b. The metal layer 20b
It has a very dense structure and effectively prevents diffusion of oxygen and moisture. In particular, by using a material that forms a passive oxide film such as aluminum as the metal layer 20b, diffusion of oxygen can be effectively prevented.
【００１７】また、金属層２０は、熱伝導性が良好であ
るため、素子部において発生した熱を効果的に放散し、
素子部の加熱を防止することができる。特に、電流量を
１００ｍＡ／ｃｍ2〜１Ａ／ｃｍ2程度と大きくして、発
光量を１０００〜１００００ｃｄ／ｍ2と大きくした場
合には、素子部の発熱量が大きく、その放熱が重要な課
題になる。本実施形態の素子によれば、このような大発
光量の素子においても、特性の劣化を最小限にできる。Further, since the metal layer 20 has good thermal conductivity, it effectively dissipates heat generated in the element portion,
Heating of the element portion can be prevented. In particular, when the current amount is increased to about 100 mA / cm 2 to 1 A / cm 2 and the light emission amount is increased to 1000 to 10000 cd / m 2 , the heat generation of the element portion is large, and the heat radiation is an important issue. become. According to the device of the present embodiment, even in such a device having a large light emission amount, deterioration of characteristics can be minimized.
【００１８】また、本実施形態では、金属陰極１８上に
絶縁層２０ａを配置したため、これによって、金属層２
０ｂと金属陰極１８とを電気的に絶縁することができ
る。さらに、最外側に金属層２０ｂを配置したため、放
熱効果を十分大きなものにできる。In this embodiment, the insulating layer 20a is disposed on the metal cathode 18, so that the metal layer 2
0b and the metal cathode 18 can be electrically insulated. Furthermore, since the metal layer 20b is disposed on the outermost side, the heat radiation effect can be sufficiently increased.
【００１９】なお、正孔輸送層１４、発光層１６は５０
ｎｍ程度、金属陰極１８は、２００ｎｍ程度、保護層２
０の絶縁層２０ａ、金属層２０ｂは２００ｎｍ程度の厚
さが好ましい。特に、金属陰極１８を２００ｎｍ以上と
いう比較的厚いものにすることによって、放熱を非常に
効果的なものにできる。It should be noted that the hole transport layer 14 and the light emitting layer 16
about 200 nm, the metal cathode 18 is about 200 nm, the protective layer 2
The thickness of the insulating layer 20a and the metal layer 20b is preferably about 200 nm. In particular, heat radiation can be made very effective by making the metal cathode 18 relatively thick, 200 nm or more.
【００２０】また、上述の実施形態では、正孔輸送層１
４と、発光層１６を積層形成したが、混合有機層の一層
構成としてもよい。さらに、正孔輸送層１４ではなく、
電子輸送層を金属陰極１８側に設ける構成としてもよ
い。さらに、透明電極１２を陰極とし、対向電極を陽極
とすることも可能である。このように、素子部の構成に
は、現在知られている各種の構成を採用することができ
る。In the above embodiment, the hole transport layer 1
4 and the light-emitting layer 16 are laminated, but a single-layer structure of a mixed organic layer may be used. Further, instead of the hole transport layer 14,
The electron transport layer may be provided on the metal cathode 18 side. Further, the transparent electrode 12 can be used as a cathode and the counter electrode can be used as an anode. As described above, various types of currently known configurations can be adopted as the configuration of the element unit.
【００２１】[0021]
「実施例１」ＩＴＯの透明電極１２が予め形成されてい
るガラス基板１０上に、真空蒸着により、トリフェニル
ジアミンを５０ｎｍ堆積して正孔輸送層１４を形成し、
その後キノリノールアルミ錯体を５０ｎｍ堆積して発光
層１６を形成した。そして、この発光層１６上にＭｇＡ
ｇを２００ｎｍ蒸着形成して金属陰極１８を形成し、素
子を形成した。その後、この素子部の上に、ＭｇＦ
2と、Ａｌを交互に積層し、絶縁層２０ａ、金属層２０
ｂからなる保護層２０を形成した。この例では、絶縁層
２０ａ、金属層２０ｂの厚み両方とも２００ｎｍとし、
これらを３層ずつ形成した。Example 1 A hole transport layer 14 was formed by depositing 50 nm of triphenyldiamine by vacuum evaporation on a glass substrate 10 on which a transparent electrode 12 of ITO was formed in advance.
Thereafter, a quinolinol aluminum complex was deposited to a thickness of 50 nm to form a light emitting layer 16. Then, on this light emitting layer 16, MgA
g was deposited to a thickness of 200 nm to form a metal cathode 18, thereby forming an element. After that, the MgF
2 and Al are alternately laminated to form an insulating layer 20a and a metal layer 20.
The protective layer 20 made of b was formed. In this example, both the thickness of the insulating layer 20a and the thickness of the metal layer 20b are 200 nm,
These were formed in three layers.
【００２２】この素子を駆動電流１０ｍＡ／ｃｍ2で連
続駆動して輝度の半減寿命を測定した。初期輝度２００
ｃｄ／ｍ2で約３０００時間の寿命が達成できた（図２
参照）。The device was continuously driven at a drive current of 10 mA / cm 2 to measure the half life of luminance. Initial luminance 200
A life of about 3000 hours was achieved at cd / m 2 (see FIG. 2).
reference).
【００２３】一方、金属陰極１８まで形成した素子（保
護層２０なし）において、同様の駆動をしたところ、半
減寿命は、約５００時間であった。この結果を図２に示
す。また、駆動電流を５００ｍＡ／ｃｍ2で連続駆動し
たところ、図３に示すように、３０分以上安定な発光が
達成できた。一方、保護層２０がないものでは、素子温
度が急激に上昇し、約１０分で輝度が０となってしまっ
た。On the other hand, when the same driving was performed on the element (without the protective layer 20) formed up to the metal cathode 18, the half life was about 500 hours. The result is shown in FIG. Further, when the driving current was continuously driven at 500 mA / cm 2 , as shown in FIG. 3, stable light emission could be achieved for 30 minutes or more. On the other hand, when the protective layer 20 was not provided, the device temperature rapidly increased, and the luminance became 0 in about 10 minutes.
【００２４】「実施例２」実施例１と同様の構成で、絶
縁層２０ａとして正孔輸送層１４を構成する有機物であ
るトリフェニルジアミンを採用した。なお、金属層２０
ｂとしては、上記と同様にＡｌを用いている。この素子
を駆動電流１０ｍＡ／ｃｍ2で連続駆動して輝度の半減
寿命を測定した。初期輝度２００ｃｄ／ｍ2で約２５０
０時間の寿命が達成できた。Example 2 The same structure as in Example 1 was employed, except that triphenyldiamine, which is an organic material constituting the hole transport layer 14, was employed as the insulating layer 20a. The metal layer 20
As b, Al is used in the same manner as described above. The device was continuously driven at a drive current of 10 mA / cm 2 to measure the half life of luminance. About 250 at initial luminance of 200 cd / m 2
A life of 0 hours was achieved.
【図１】 有機ＥＬ素子の実施形態の構成を示す図であ
る。FIG. 1 is a diagram illustrating a configuration of an embodiment of an organic EL element.
【図２】 同実施例の寿命を示す特性図である。FIG. 2 is a characteristic diagram showing a life of the embodiment.
【図３】 同実施例の寿命を示す特性図である。FIG. 3 is a characteristic diagram showing a life of the embodiment.
１０ ガラス基板、１２ 透明電極、１４ 正孔輸送
層、１６ 発光層、１８金属陰極、２０ 保護層、２０
ａ 絶縁層、２０ｂ 金属層。Reference Signs List 10 glass substrate, 12 transparent electrode, 14 hole transport layer, 16 light emitting layer, 18 metal cathode, 20 protective layer, 20
a Insulating layer, 20b Metal layer.
Claims (1)
を狭持し、両電極からキャリアを発光層に注入すること
によって発光層を発光させる有機ＥＬ素子において、 少なくとも一方の電極及び発光層の外側を覆う保護層あ
って、有機層と金属層の２層または無機層と金属層の２
層を含む多層構造からなる保護層を有することを特徴と
する有機ＥＬ素子。1. An organic EL device in which a light-emitting layer made of an organic material is sandwiched between a pair of electrodes, and light is emitted from the light-emitting layer by injecting carriers from both electrodes into the light-emitting layer. A protective layer covering the outside of the substrate, two layers of an organic layer and a metal layer or two layers of an inorganic layer and a metal layer.
An organic EL device comprising a protective layer having a multilayer structure including layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9079597A JPH10275680A (en) | 1997-03-31 | 1997-03-31 | Organic EL device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9079597A JPH10275680A (en) | 1997-03-31 | 1997-03-31 | Organic EL device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10275680A true JPH10275680A (en) | 1998-10-13 |
Family
ID=13694421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9079597A Pending JPH10275680A (en) | 1997-03-31 | 1997-03-31 | Organic EL device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10275680A (en) |
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