JPH1027757A - Vacuum processing equipment - Google Patents
Vacuum processing equipmentInfo
- Publication number
- JPH1027757A JPH1027757A JP17917696A JP17917696A JPH1027757A JP H1027757 A JPH1027757 A JP H1027757A JP 17917696 A JP17917696 A JP 17917696A JP 17917696 A JP17917696 A JP 17917696A JP H1027757 A JPH1027757 A JP H1027757A
- Authority
- JP
- Japan
- Prior art keywords
- support
- rotating body
- vacuum
- processing apparatus
- vacuum processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
(57)【要約】
【課題】熱処理時に汚染物質が空洞部に侵入し、回転体
の内壁やヒータを汚染する。
【解決手段】真空中で被処理物を加熱処理する真空処理
装置において、真空容器(21)と、この真空容器(21)内に
配置され、周縁部に被処理物の位置ずれを防止するため
の第２の突起(26a〜26c)を設けるとともに、このストッ
パーの内側に被処理物を配置する支持体(23)と、前記真
空容器内に配置され、前記支持体と一体に嵌合され、該
支持体とともに空洞部(24)を形成する回転体(25)と、こ
の回転体を駆動するモータ(29)と、前記支持体と回転体
で形成される空洞部に配置され、前記支持体上の被処理
物を加熱する加熱源(28)とを具備することを特徴とする
真空処理装置。
(57) [Summary] A contaminant invades a cavity during heat treatment, and contaminates an inner wall of a rotating body and a heater. In a vacuum processing apparatus for heat-treating an object to be processed in a vacuum, a vacuum container (21) and a vacuum container (21) are disposed in the vacuum container (21) to prevent the position of the object from being displaced at a peripheral portion. A second projection (26a to 26c) is provided, and a support (23) for arranging an object to be processed inside the stopper, and disposed in the vacuum vessel, and integrally fitted with the support, A rotating body (25) that forms a cavity (24) with the support, a motor (29) for driving the rotating body, and a support that is disposed in a cavity formed by the support and the rotating body; A vacuum processing apparatus comprising: a heating source (28) for heating the object to be processed.
Description
【０００１】[0001]
【発明の属する技術分野】この発明は真空処理装置に関
し、特に真空中でＣＶＤ（Ｃhemical Ｖapour Ｄeposit
ion ），エッチング等の半導体製造工程を行う真空処理
装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus, and particularly to a CVD (Chemical Vapor Deposit) apparatus in a vacuum.
The present invention relates to a vacuum processing apparatus for performing a semiconductor manufacturing process such as ion etching and etching.
【０００２】[0002]
【従来の技術】従来、真空処理装置としては、図１に示
すものが知られている。図中の符番１は、２つの部屋１
ａ，１ｂを持つ真空容器である。一方の部屋１ａには、
ウェハ２が載置される環状の支持体３、この支持体３と
嵌合して支持体３とともに開口部を形成する回転体４が
配置されている。前記支持体３の内側面には、前記ウェ
ハ２を係止する環状の縁部３ａが設けられている。前記
回転体４の上部は前記支持体３と嵌合するように環状に
なっており、下部は筒状部になっていて部屋１ｂの下方
に延びている。2. Description of the Related Art Conventionally, a vacuum processing apparatus shown in FIG. 1 is known. Reference number 1 in the figure is two rooms 1
a, 1b. In one room 1a,
An annular support 3 on which the wafer 2 is mounted, and a rotating body 4 which fits with the support 3 and forms an opening with the support 3 are arranged. An annular edge 3 a for locking the wafer 2 is provided on the inner surface of the support 3. The upper part of the rotating body 4 is formed in an annular shape so as to be fitted with the support body 3, and the lower part is a tubular part and extends below the room 1b.
【０００３】前記支持体３と回転体４によって形成され
る開口部及び回転体４の下部の筒状部には、前記ウェハ
２を上下方向に移動させる搬送機構５、ウェハ２を加熱
処理するヒータ６が配置されている。前記回転体４の筒
状部には、回転導入機構７，モータ８が順次接続されて
いる。前記ヒータ６には電流導入端子９が接続されてい
る。前記部屋１ａには排気口10が接続され、前記部屋１
ｂにはＮ2 ガス導入口11が接続されている。A transfer mechanism 5 for vertically moving the wafer 2 and a heater for heating the wafer 2 are provided in an opening formed by the support 3 and the rotating body 4 and a cylindrical portion below the rotating body 4. 6 are arranged. A rotation introducing mechanism 7 and a motor 8 are sequentially connected to the cylindrical portion of the rotating body 4. A current introduction terminal 9 is connected to the heater 6. An exhaust port 10 is connected to the room 1a.
The b 2 is connected to an N 2 gas inlet 11.
【０００４】[0004]
【発明が解決しようとする課題】ところで、従来の真空
処理装置においては、ウェハ２を真空容器１の部屋１ａ
内へ搬送するために搬送ロボットを使用する関係で、図
１に示すようにヒータ６の上部が開放され、この開放さ
れた部分周辺で搬送機構５によりウェハ２の上下方向の
移動を行なっている。In the conventional vacuum processing apparatus, the wafer 2 is placed in the chamber 1a of the vacuum vessel 1.
As shown in FIG. 1, the upper portion of the heater 6 is opened because the transfer robot is used to transfer the wafer 2 into the inside, and the wafer 2 is vertically moved by the transfer mechanism 5 around the opened portion. .
【０００５】しかしながら、熱処理時に支持体３の環状
の縁部３ａ上にウェハ２が載置されるものの、支持体
３，回転体４及びウェハ２で形成される空間部は完全に
密閉されていないため、熱処理時に処理に要する反応性
の高い気体やパーティクル発生源となる固体物等の汚染
物質が熱処理時にその空間部内に侵入し、支持体３や回
転体４の内壁及びヒータ６等を汚染する。従って、回転
体４やヒータ６を定期的に洗浄、交換する必要がある。However, although the wafer 2 is placed on the annular edge 3a of the support 3 during the heat treatment, the space formed by the support 3, the rotating body 4 and the wafer 2 is not completely sealed. For this reason, contaminants such as highly reactive gas required for the heat treatment and solids that are a source of particles enter the space during the heat treatment and contaminate the support 3, the inner wall of the rotating body 4, the heater 6, and the like. . Therefore, it is necessary to periodically clean and replace the rotating body 4 and the heater 6.
【０００６】この発明はこうした事情を考慮してなされ
たもので、支持体と回転体により密閉型の空洞部を形成
するように両者を一体的に構成することにより、熱処理
時に汚染物質が空洞部に侵入するのを抑制し、回転体や
ヒータに対するメンテナンスを軽減しえる真空処理装置
を提供することを目的とする。The present invention has been made in view of such circumstances, and by forming a closed cavity by a support body and a rotating body so as to form a closed cavity, contaminants can be removed during heat treatment. It is an object of the present invention to provide a vacuum processing apparatus capable of suppressing intrusion into a rotating body and reducing maintenance of a rotating body and a heater.
【０００７】[0007]
【課題を解決するための手段】この発明は、真空中で被
処理物を加熱処理する真空処理装置において、真空容器
と、この真空容器内に配置され、周縁部に被処理物の位
置ずれを防止するためのストッパーを設けるとともに、
このストッパーの内側に被処理物を配置する支持体と、
前記真空容器内に配置され、前記支持体と一体に嵌合さ
れ、該支持体とともに空洞部を形成する回転体と、この
回転体を駆動する駆動源と、前記支持体と回転体で形成
される空洞部に配置され、前記支持体上の被処理物を加
熱する加熱源とを具備することを特徴とする真空処理装
置である。SUMMARY OF THE INVENTION The present invention relates to a vacuum processing apparatus for heat-treating an object to be processed in a vacuum, comprising: a vacuum container; In addition to providing a stopper to prevent
A support for arranging an object to be processed inside the stopper,
A rotating body that is arranged in the vacuum vessel, is integrally fitted with the support, and forms a cavity together with the support, a driving source that drives the rotating body, and a rotating body that is formed by the support and the rotating body. And a heating source disposed in the hollow portion for heating the object to be processed on the support.
【０００８】この発明においては、被処理物が載置され
る部分に相当する前記支持体上に、被処理物を保持する
第１の突起が設けることが好ましい。この第１の突起
は、被処理物の裏面が支持体表面に直接接しないように
保持する働きをもつ。この第１の突起の数は、ウェハを
真空容器内に搬入する搬送ロボットが入り易くかつウェ
ハを水平に保持する目的を考慮して通常３本位が好まし
い。In the present invention, it is preferable that a first projection for holding the object is provided on the support corresponding to a portion on which the object is placed. The first projection has a function of holding the back surface of the processing object so as not to directly contact the surface of the support. The number of the first projections is usually preferably about three in consideration of the purpose of easily transferring a wafer into the vacuum chamber and holding the wafer horizontally.
【０００９】この発明において、前記ストッパーとして
は、例えば支持体の同一半径をもつ円周上に１２０度間
隔で配置され、かつ高さが被処理物を支持体上に載置し
た時の被処理物の表面の高さより高い３本の第２の突起
が挙げられる。この第２の突起は被処理物の位置ずれを
防止する働きをする。この第２の突起の数は、被処理物
の位置ずれを防止する目的を考慮して最低３本必要であ
る。In the present invention, the stopper may be, for example, disposed at intervals of 120 degrees on a circumference having the same radius of the support, and may have a height when the workpiece is placed on the support. There are three second protrusions higher than the height of the surface of the object. The second projection functions to prevent the position of the workpiece from being shifted. The number of the second protrusions is required to be at least three in consideration of the purpose of preventing the displacement of the workpiece.
【００１０】[0010]
【発明の実施の形態】以下、この発明の一実施例に係る
真空処理装置を図２及び図３を参照して説明する。ここ
で、図２は同真空処理装置の断面図、図３は図２の支持
体の平面図を示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A vacuum processing apparatus according to one embodiment of the present invention will be described below with reference to FIGS. Here, FIG. 2 is a sectional view of the vacuum processing apparatus, and FIG. 3 is a plan view of the support of FIG.
【００１１】図中の符番21は、２つの部屋21ａ，21ｂを
持つ真空容器である。一方の部屋21ａには、ウェハ22が
載置される支持体23、この支持体23と嵌合して支持体23
とともに密閉型の空洞部24を形成する回転体25が配置さ
れている。前記支持体23の円周上部には、ウェハ22の位
置ずれを防止するために同一半径をもつ円周に沿って１
２０度間隔で３本の第２の突起26ａ，26ｂ，26ｃが配置
されている。これらの第２の突起26ａ〜26ｃの高さは、
ウェハ22を支持体23上に載置した時のウェハ22の表面の
高さより高く設定されている。Reference numeral 21 in the figure denotes a vacuum vessel having two chambers 21a and 21b. One of the chambers 21a has a support 23 on which the wafer 22 is placed.
A rotating body 25 that forms a closed cavity 24 is also arranged. In order to prevent the wafer 22 from being displaced, one line is formed along the circumference having the same radius to prevent the wafer 22 from being displaced.
Three second protrusions 26a, 26b, 26c are arranged at intervals of 20 degrees. The height of these second projections 26a to 26c is
The height is set higher than the height of the surface of the wafer 22 when the wafer 22 is placed on the support 23.
【００１２】また、前記突起26ａ〜26ｃの内側の支持体
23上には、突起26ａ〜26ｃに対応してウェハ22を保持す
る３本の第１の突起27ａ〜27ｃが設けられている。前記
回転体25の上部開口端は前記支持体23と噛合するように
環状になっており、下部は筒状部になっていて真空容器
21の部屋21ｂまで延びている。Further, a support inside the projections 26a to 26c.
On the 23, three first projections 27a to 27c for holding the wafer 22 are provided corresponding to the projections 26a to 26c. The upper opening end of the rotating body 25 is formed in an annular shape so as to mesh with the supporting body 23, and the lower part is a cylindrical portion, and
It extends to 21 rooms 21b.
【００１３】前記支持体23と回転体25で形成される空洞
部24及び回転体25の筒状部には、熱処理するヒータ28が
部屋21ｂの下方まで延出するように配置されている。前
記回転体25の筒状部には、回転導入機構28，モータ29が
順次接続されている。前記ヒータ28には電流導入端子30
が接続されている。前記部屋21ａには図示しない排気ポ
ンプに接続した排気口31が設けられ、排気ポンプにより
真空容器21の部屋21ａ内の気体が排気される。前記部屋
21ｂにはＮ2 ガス導入口32が接続されている。In the hollow portion 24 formed by the support member 23 and the rotating member 25 and in the cylindrical portion of the rotating member 25, a heater 28 for heat treatment is arranged so as to extend below the room 21b. A rotation introducing mechanism 28 and a motor 29 are sequentially connected to the cylindrical portion of the rotating body 25. The heater 28 has a current introduction terminal 30
Is connected. The chamber 21a is provided with an exhaust port 31 connected to an exhaust pump (not shown), and the exhaust pump exhausts gas in the chamber 21a of the vacuum vessel 21. The room
An N 2 gas inlet 32 is connected to 21b.
【００１４】こうした構成の真空処理装置において、支
持体23の下部と回転体25の上部が噛み合わせにより、ウ
ェハ22の処理中の温度制御を目的としたヒータ28と処理
を行なわれる空間とを隔絶している。また、真空容器21
内に設けられたウェハ搬入出口（図示せず）を隔離バル
ブを介して搬送ロボット（図示せず）によってウェハ22
が該ウェハ22の下部にできる隙間を使用して搬入され
る。回転体25は真空容器21内の回転導入機構28を介して
導入され、モータ29が設置される部屋21ｂは大気である
が、大気中の水分の結露を防ぐ為に窒素ガスを導入口32
から導入できるようになっている。ウェハ22は加熱され
ながら回転し、処理が行なわれるようになっている。In the vacuum processing apparatus having such a configuration, the lower portion of the support 23 and the upper portion of the rotating body 25 are engaged with each other, thereby isolating the heater 28 for controlling the temperature during the processing of the wafer 22 and the space to be processed. doing. In addition, the vacuum vessel 21
A transfer robot (not shown) connects a wafer loading / unloading port (not shown) provided therein to the wafer 22 through an isolation valve.
Is carried in using a gap formed below the wafer 22. The rotator 25 is introduced through a rotation introducing mechanism 28 in the vacuum vessel 21, and the room 21 b in which the motor 29 is installed is the atmosphere, but a nitrogen gas inlet 32 is provided to prevent condensation of moisture in the atmosphere.
It can be introduced from. The wafer 22 rotates while being heated, and the processing is performed.
【００１５】上記実施例に係る真空処理装置によれば、
支持体23及び該支持体23と嵌合して支持体23とともに密
閉型の空洞部24を形成する回転体25が配置された構成と
なっているため、ウェハ22を処理する部屋21ａと空洞部
24とが隔離することになる。従って、反応性の気体や処
理中に発生する固形物が空洞部24内のヒータ28や回転体
25の内壁を汚染することなく、長期の使用に対し清浄な
状態が保たれる為、メンテナンスの頻度が減少し、ヒー
タ28の劣化も抑制され、コスト低減を図ることができ
る。According to the vacuum processing apparatus of the above embodiment,
Since the supporting body 23 and the rotating body 25 that fits with the supporting body 23 to form a closed cavity 24 together with the supporting body 23 are arranged, the room 21a for processing the wafer 22 and the cavity
24 will be isolated. Therefore, the reactive gas and the solid matter generated during the processing may be generated by the heater 28 or the rotating body in the cavity 24.
Since the clean state is maintained for long-term use without contaminating the inner wall of the heater 25, the frequency of maintenance is reduced, the deterioration of the heater 28 is suppressed, and the cost can be reduced.
【００１６】[0016]
【発明の効果】以上詳述した如くこの発明によれば、支
持体と回転体により密閉型の空洞部を形成するように両
者を一体的に構成することにより、熱処理時に汚染物質
が空洞部に侵入するのを抑制し、回転体やヒータに対す
るメンテナンスを軽減しえる低コストの真空処理装置を
提供できる。As described above in detail, according to the present invention, contaminants are contained in the cavity during the heat treatment by integrally forming both the support and the rotating body so as to form a closed cavity. It is possible to provide a low-cost vacuum processing apparatus capable of suppressing intrusion and reducing maintenance for the rotating body and the heater.
【図１】従来の真空処理装置の断面図。FIG. 1 is a sectional view of a conventional vacuum processing apparatus.
【図２】この発明の一実施例に係る真空処理装置の断面
図。FIG. 2 is a sectional view of a vacuum processing apparatus according to one embodiment of the present invention.
【図３】図２の真空処理装置の一構成である支持体の平
面図。FIG. 3 is a plan view of a support which is one configuration of the vacuum processing apparatus of FIG. 2;
21…真空容器、 21ａ、21ｂ…部屋、 22…ウェハ、 23…支持体、 24…空洞部、 25…回転体、 26ａ〜26ｃ…第２の突起、 27ａ〜27ｃ…第１の突起、 28…回転導入機構、 29…モータ、 30…電流導入端子、 31…排気口、 32…ガス導入口。 21: vacuum container, 21a, 21b: room, 22: wafer, 23: support, 24: cavity, 25: rotating body, 26a to 26c: second projection, 27a to 27c: first projection, 28 ... Rotation introduction mechanism, 29: motor, 30: current introduction terminal, 31: exhaust port, 32: gas introduction port.
Claims (3)
理装置において、真空容器と、この真空容器内に配置さ
れ、周縁部に被処理物の位置ずれを防止するためのスト
ッパーを設けるとともに、このストッパーの内側に被処
理物を配置する支持体と、前記真空容器内に配置され、
前記支持体と一体に嵌合され、該支持体とともに空洞部
を形成する回転体と、この回転体を駆動する駆動源と、
前記支持体と回転体で形成される空洞部に配置され、前
記支持体上の被処理物を加熱する加熱源とを具備するこ
とを特徴とする真空処理装置。1. A vacuum processing apparatus for heat-treating an object to be processed in a vacuum, comprising: a vacuum container; and a stopper disposed in the vacuum container and provided at a peripheral portion thereof for preventing displacement of the object to be processed. A support for arranging an object to be processed inside the stopper, and a support arranged in the vacuum vessel;
A rotating body that is integrally fitted with the support and forms a cavity together with the support, a driving source that drives the rotating body,
A vacuum processing apparatus, comprising: a heating source disposed in a cavity formed by the support and a rotating body, for heating an object to be processed on the support.
記支持体上に、被処理物を保持する第１の突起が設けら
れていることを特徴とする請求項１記載の真空処理装
置。2. The vacuum processing apparatus according to claim 1, wherein a first projection for holding the object is provided on the support corresponding to a portion on which the object is placed. apparatus.
つ円周上に１２０度間隔で配置された３本の第２の突起
であり、この突起の高さは被処理物を支持体上に載置し
た時の被処理物の表面の高さより高いことを特徴とする
請求項１記載の真空処理装置。3. The stopper comprises three second projections arranged at intervals of 120 degrees on a circumference having the same radius of the support, and the height of the projections is such that the object to be processed is placed on the support. 2. The vacuum processing apparatus according to claim 1, wherein the height of the vacuum processing apparatus is higher than the height of the surface of the processing object when mounted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17917696A JP3073161B2 (en) | 1996-07-09 | 1996-07-09 | Vacuum processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17917696A JP3073161B2 (en) | 1996-07-09 | 1996-07-09 | Vacuum processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1027757A true JPH1027757A (en) | 1998-01-27 |
| JP3073161B2 JP3073161B2 (en) | 2000-08-07 |
Family
ID=16061274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17917696A Expired - Fee Related JP3073161B2 (en) | 1996-07-09 | 1996-07-09 | Vacuum processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3073161B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001098379A (en) * | 1999-09-28 | 2001-04-10 | Shibaura Mechatronics Corp | Vapor phase growth equipment |
| JP2003197718A (en) * | 2001-12-26 | 2003-07-11 | Tokyo Electron Ltd | Substrate processing apparatus and substrate processing method |
-
1996
- 1996-07-09 JP JP17917696A patent/JP3073161B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001098379A (en) * | 1999-09-28 | 2001-04-10 | Shibaura Mechatronics Corp | Vapor phase growth equipment |
| JP2003197718A (en) * | 2001-12-26 | 2003-07-11 | Tokyo Electron Ltd | Substrate processing apparatus and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3073161B2 (en) | 2000-08-07 |
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