JPH10277928A - Polishing equipment - Google Patents
Polishing equipmentInfo
- Publication number
- JPH10277928A JPH10277928A JP7956697A JP7956697A JPH10277928A JP H10277928 A JPH10277928 A JP H10277928A JP 7956697 A JP7956697 A JP 7956697A JP 7956697 A JP7956697 A JP 7956697A JP H10277928 A JPH10277928 A JP H10277928A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing
- polishing pad
- height
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
(57)【要約】
【課題】半導体ウエハの全面を均一に研磨することがで
きる研磨装置。
【解決手段】半導体ウエハ(3)を柔軟なシート(1
6)とバッキングパッド(8)を介して空気加圧を行う
と共に、ウエハ(3)の外側にリング板(17)を設
け、リング板の高さ調整機構(18)によりウエハ研磨
面(4)とリング下面の高さをそろえる。
(57) Abstract: A polishing apparatus capable of uniformly polishing the entire surface of a semiconductor wafer. A semiconductor wafer (3) is placed on a flexible sheet (1).
6) and air pressure through the backing pad (8), a ring plate (17) is provided outside the wafer (3), and the wafer polishing surface (4) is provided by a ring plate height adjusting mechanism (18). And the height of the ring lower surface.
Description
【0001】[0001]
【発明の属する技術分野】本発明は半導体製造過程で半
導体ウエハの表面を機械的に平坦化する工程で用いられ
る研磨装置に係わり、特に半導体ウエハの全面を均一に
研磨する特性に優れた研磨装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus used in a step of mechanically flattening the surface of a semiconductor wafer in a semiconductor manufacturing process, and more particularly to a polishing apparatus excellent in characteristics for uniformly polishing the entire surface of a semiconductor wafer. About.
【0002】[0002]
【従来の技術】従来の研磨装置として、例えば特公平6
−91058号公報に記載のように、平坦性の良い剛体の保
持プレートに半導体ウエハを保持し、平坦性の良い定盤
に貼り付けた研磨パッドの表面を摺動させる方法が用い
られてきた。2. Description of the Related Art As a conventional polishing apparatus, for example,
As described in JP-A-91058, a method has been used in which a semiconductor wafer is held on a rigid holding plate having good flatness and a surface of a polishing pad attached to a surface plate having good flatness is slid.
【0003】[0003]
【発明が解決しようとする課題】上記の従来技術は、保
持プレートと定盤の表面の平坦性を良くすれば半導体ウ
エハを平坦研磨することができると考えたものである。
ところが、大きな荷重を加えた条件下での研磨パッドと
半導体ウエハとの摺動研磨においては、ウエハと接触し
ている研磨パッドが圧縮されるため、ウエハの端部が圧
縮変形していない研磨パッド面にぶつかりながら移動す
るため、ウエハの周辺部が中央部より多く研磨されてし
まう(いわゆる周辺ダレを生じてしまう)という問題が
あった。The prior art described above is based on the idea that the flatness of the semiconductor wafer can be achieved by improving the flatness of the surfaces of the holding plate and the surface plate.
However, in sliding polishing between a polishing pad and a semiconductor wafer under a condition where a large load is applied, since the polishing pad in contact with the wafer is compressed, the polishing pad in which the end of the wafer is not compressed and deformed is used. Since the wafer moves while hitting the surface, there is a problem that the peripheral portion of the wafer is polished more than the central portion (so-called peripheral sag occurs).
【0004】本発明の目的は、半導体ウエハの全面を均
一に研磨するに適した研磨装置を提供するものである。An object of the present invention is to provide a polishing apparatus suitable for uniformly polishing the entire surface of a semiconductor wafer.
【0005】[0005]
【課題を解決するための手段】上記の目的を達成するた
めの第1の方法として、半導体ウエハの保持構造におい
て、ウエハの外側にてウエハ端近傍の研磨パッドに空気
噴流によって空気圧力を与えるものである。ウエハ端近
傍の空気圧力によってウエハ端近傍の研磨パッドを圧縮
し、研磨パッドの高さをウエハが接触している部分と合
わせることによりウエハ周辺部の不均一研磨が生じるこ
とがない。As a first method for achieving the above object, in a semiconductor wafer holding structure, air pressure is applied by an air jet to a polishing pad outside a wafer and near a wafer end. It is. By compressing the polishing pad near the wafer edge by the air pressure near the wafer edge and adjusting the height of the polishing pad to the height of the portion where the wafer is in contact, non-uniform polishing of the wafer peripheral portion does not occur.
【0006】上記の目的を達成するための第2の方法と
して、ウエハ保持構造において、ウエハの外側にリング
を設け、リングの下面とウエハ研磨面が同じ高さになる
ようにリングの高さ調整機構を設ける。ウエハ研磨面と
リング下面との高さがそろうため、ウエハ周辺部の不均
一研磨が生じることがない。As a second method for achieving the above object, in a wafer holding structure, a ring is provided outside a wafer, and the height of the ring is adjusted so that the lower surface of the ring and the wafer polishing surface are at the same height. Provide a mechanism. Since the height of the wafer polishing surface and the lower surface of the ring are aligned, uneven polishing of the wafer peripheral portion does not occur.
【0007】[0007]
【発明の実施の形態】以下、本発明の第1の実施例を図
1,図2により説明する。図1は第1の実施例を適用し
た研磨装置全体の模式図を示す。図2はウエハ保持構造
部を厚さ方向を誇張して拡大した垂直断面図を示す。円
板状の平坦な定盤1の上に研磨パッド2を貼り付ける。
研磨パッド2の上には研磨液を流す。半導体ウエハ3は
研磨される面4が研磨パッド2に接触するようにウエハ
保持具5に取り付けられる。ウエハ保持具5は空気流路
6があり、平坦性の良い剛体表面7がバッキングパッド
8をはさんでウエハ3の背面に荷重を与える構造になっ
ている。ウエハ3の外側の近傍にリング状の空気ノズル
9があり、研磨パッド2に空気噴流によって空気圧力を
与える。バッキンパッドとして例えば厚さが0.5mm 程
度のポリウレタンシート,ゴムシートなどを用いる。そ
の弾性強度は研磨パッドの弾性強度の半分以下の材料と
する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a schematic view of the entire polishing apparatus to which the first embodiment is applied. FIG. 2 is a vertical sectional view showing the wafer holding structure in an enlarged manner in the thickness direction. A polishing pad 2 is stuck on a disk-shaped flat platen 1.
A polishing liquid is caused to flow on the polishing pad 2. The semiconductor wafer 3 is mounted on the wafer holder 5 such that the surface 4 to be polished contacts the polishing pad 2. The wafer holder 5 has an air flow path 6, and has a structure in which a rigid flat surface 7 having good flatness applies a load to the back surface of the wafer 3 with the backing pad 8 interposed therebetween. A ring-shaped air nozzle 9 is provided near the outside of the wafer 3 and applies air pressure to the polishing pad 2 by an air jet. As the backing pad, for example, a polyurethane sheet or a rubber sheet having a thickness of about 0.5 mm is used. The elastic strength of the material is not more than half the elastic strength of the polishing pad.
【0008】研磨パッド2として厚さが1mm程度の発泡
ポリウレタン,ナイロンなどを用いる。研磨液が研磨パ
ッド2に保持されやすくするため、研磨パッド2の表面
に溝や穴を設けることが望ましい。ウエハ保持具5は荷
重10をかけて、ウエハ3を研磨パッド2に押し付けな
がら、定盤1の上を揺動し(矢印)11さらに回転12
する。定盤も回転13する。As the polishing pad 2, foamed polyurethane, nylon or the like having a thickness of about 1 mm is used. It is desirable to provide a groove or a hole on the surface of the polishing pad 2 so that the polishing liquid is easily held on the polishing pad 2. The wafer holder 5 swings on the platen 1 while pressing the wafer 3 against the polishing pad 2 while applying a load 10 (arrow) 11 and further rotates 12
I do. The platen also rotates 13.
【0009】その結果、ウエハ3の研磨面4が研磨パッ
ド2の表面にこすられながら移動し研磨される。図2に
示すように、ウエハ3に接触している研磨パッド2はそ
の押し付け荷重によって圧縮され、またウエハの外側の
ウエハ端近傍においても空気圧力によって研磨パッド2
が圧縮され、研磨パッド2の表面はほぼ平面になってい
るため、ウエハ端部の影響がなく、ウエハ全面を均一に
研磨することができる。As a result, the polishing surface 4 of the wafer 3 moves while being rubbed against the surface of the polishing pad 2 and is polished. As shown in FIG. 2, the polishing pad 2 in contact with the wafer 3 is compressed by the pressing load, and the polishing pad 2 is also compressed by air pressure near the outer edge of the wafer.
Is compressed and the surface of the polishing pad 2 is substantially flat, so that the entire surface of the wafer can be uniformly polished without being affected by the edge of the wafer.
【0010】なお、空気ノズルの代わりに、研磨パッド
面に空気圧力を与えるような空気室をウエハ近傍に設け
ても良い。[0010] Instead of the air nozzle, an air chamber for applying air pressure to the polishing pad surface may be provided near the wafer.
【0011】本発明の第2の実施例を図3により説明す
る。図3はウエハ保持構造部を厚さ方向を誇張して拡大
した垂直断面図を示す。ウエハ保持具5は空気流路14
と空気室15があり、柔軟なシート16とバッキングパ
ッド8を介してウエハ3に荷重を与える構造になってい
る。ウエハ3の外側にリング板17を設ける。ウエハ外
周部のシート16に空気圧力を利用した高さ調整機構1
8が設けられており、リング板17の下面の高さをウエ
ハ研磨面4に一致させるように調整できるようになって
いる。ウエハ3の外側の近傍にリテーナリング19があ
る。また、シート16をウエハ保持具5に取り付けると
共に、リング板17の位置固定のための部品20があ
る。リング板17の下面の高さとウエハ研磨面4の高さ
を一致させることによりウエハ端部の影響がなくウエハ
全面を均一に研磨することができる。A second embodiment of the present invention will be described with reference to FIG. FIG. 3 shows a vertical cross-sectional view of the wafer holding structure portion enlarged in the thickness direction. The wafer holder 5 has an air passage 14
, And an air chamber 15, and a structure for applying a load to the wafer 3 via the flexible sheet 16 and the backing pad 8. A ring plate 17 is provided outside the wafer 3. Height adjustment mechanism 1 utilizing air pressure on sheet 16 at the outer periphery of wafer
8 is provided so that the height of the lower surface of the ring plate 17 can be adjusted to match the wafer polishing surface 4. A retainer ring 19 is provided near the outside of the wafer 3. There is also a component 20 for attaching the sheet 16 to the wafer holder 5 and fixing the position of the ring plate 17. By matching the height of the lower surface of the ring plate 17 with the height of the wafer polishing surface 4, the entire surface of the wafer can be uniformly polished without the influence of the wafer edge.
【0012】柔軟なシート16とバッキングパッド8に
より、ウエハ3とバッキングパッド8との間の異物の影
響やウエハ3の厚さのばらつきの影響を吸収しウエハ全
面を均一な圧力で研磨パッド2に押し付けるため、ウエ
ハ全面が均一に研磨される。また、空気室15の中にゲ
ル状の柔軟材や液体を封入した構造でも効果は同じであ
る。The flexible sheet 16 and the backing pad 8 absorb the influence of foreign matter between the wafer 3 and the backing pad 8 and the influence of variations in the thickness of the wafer 3, and apply the entire surface of the wafer to the polishing pad 2 with a uniform pressure. Since the pressing is performed, the entire surface of the wafer is uniformly polished. The same effect can be obtained even when a gel-like soft material or liquid is sealed in the air chamber 15.
【0013】本発明の第3の実施例を図4により説明す
る。図4はウエハ保持構造部を厚さ方向を誇張して拡大
した垂直断面図を示す。ウエハ保持具5は空気流路14
と空気室15があり、柔軟なシート21とバッキングパ
ッド8を介してウエハ3に荷重を与える構造になってい
る。シート21は、鍋のような形状をしており、取り付
け部品22によってウエハ保持具5に取り付けられてい
る。A third embodiment of the present invention will be described with reference to FIG. FIG. 4 is a vertical sectional view showing the wafer holding structure in an enlarged manner in the thickness direction. The wafer holder 5 has an air passage 14
, And an air chamber 15, which is configured to apply a load to the wafer 3 via the flexible sheet 21 and the backing pad 8. The sheet 21 has a pot-like shape, and is attached to the wafer holder 5 by attaching parts 22.
【0014】ウエハ3の外側に押し付け部品23があ
り、空気圧力を利用した高さ調整機構24が設けられて
おり、押し付け部品23の下面25とウエハ研磨面4と
が同じ高さになるように調整できるようになっている。
押し付け部品23の下面25の高さとウエハ研磨面4の
高さを一致させることによりウエハ端部の影響がなくウ
エハ全面を均一に研磨することができる。A pressing component 23 is provided outside the wafer 3, and a height adjusting mechanism 24 using air pressure is provided. The lower surface 25 of the pressing component 23 and the wafer polishing surface 4 have the same height. It can be adjusted.
By matching the height of the lower surface 25 of the pressing component 23 with the height of the wafer polishing surface 4, the entire surface of the wafer can be uniformly polished without the influence of the wafer edge.
【0015】[0015]
【発明の効果】本発明によれば、ウエハ端部の影響をな
くし、研磨パッドに対するウエハに押し付け圧力をウエ
ハ全面で均一にすることができ、ウエハ全面の研磨速度
を均一にすることが可能となる。そのため、半導体製造
時の不良率が低下し、信頼性の高い高集積な半導体装置
を安価で製造できる効果がある。According to the present invention, the influence of the edge of the wafer can be eliminated, the pressure of pressing against the polishing pad against the wafer can be made uniform over the entire surface of the wafer, and the polishing rate over the entire surface of the wafer can be made uniform. Become. Therefore, there is an effect that the defect rate at the time of manufacturing a semiconductor is reduced, and a highly reliable and highly integrated semiconductor device can be manufactured at low cost.
【図1】本発明の第1の実施例の研磨装置の模式図を示
す。FIG. 1 is a schematic view of a polishing apparatus according to a first embodiment of the present invention.
【図2】本発明の第1の実施例の研磨装置のウエハ保持
構造部の拡大した垂直断面図を示す。FIG. 2 is an enlarged vertical sectional view of a wafer holding structure of the polishing apparatus according to the first embodiment of the present invention.
【図3】本発明の第2の実施例の研磨装置のウエハ保持
構造部の拡大した垂直断面図を示す。FIG. 3 is an enlarged vertical sectional view of a wafer holding structure of a polishing apparatus according to a second embodiment of the present invention.
【図4】本発明の第3の実施例の研磨装置のウエハ保持
構造部の拡大した垂直断面図を示す。FIG. 4 is an enlarged vertical sectional view of a wafer holding structure of a polishing apparatus according to a third embodiment of the present invention.
1…定盤、2…研磨パッド、3…半導体ウエハ、4…研
磨面、5…ウエハ保持具、6…空気流路、7…剛体表
面、8…バッキングパッド、9…空気ノズル、10…荷
重、11…揺動、12,13…回転、14…空気流路、
15…空気室、16…シート、17…リング板、18…
高さ調整機構、19…リテーナリング、20…固定部
品、21…シート、22…取り付け部品、23…押し付
け部品、24…高さ調整機構、25…押し付け部品の下
面。DESCRIPTION OF SYMBOLS 1 ... Surface plate, 2 ... Polishing pad, 3 ... Semiconductor wafer, 4 ... Polishing surface, 5 ... Wafer holder, 6 ... Air flow path, 7 ... Rigid surface, 8 ... Backing pad, 9 ... Air nozzle, 10 ... Load , 11 ... swing, 12, 13 ... rotation, 14 ... air flow path,
15 ... air chamber, 16 ... seat, 17 ... ring plate, 18 ...
Height adjusting mechanism, 19: retainer ring, 20: fixed component, 21: seat, 22: mounting component, 23: pressing component, 24: height adjusting mechanism, 25: lower surface of the pressing component.
Claims (1)
前記半導体ウエハの研磨面を定盤に接着したシート状の
研磨パッドの表面に押し付けながら移動することによ
り、半導体ウエハの研磨面の研磨する研磨装置におい
て、半導体ウエハの近傍の研磨パッドを空気圧力により
圧縮する機構を有していることを特徴とする研磨装置。A semiconductor wafer attached to a wafer holder;
In the polishing apparatus for polishing the polishing surface of the semiconductor wafer by moving while pressing the polishing surface of the semiconductor wafer against the surface of the sheet-like polishing pad adhered to the surface plate, the polishing pad near the semiconductor wafer is pressed by air pressure. A polishing apparatus having a compression mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7956697A JPH10277928A (en) | 1997-03-31 | 1997-03-31 | Polishing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7956697A JPH10277928A (en) | 1997-03-31 | 1997-03-31 | Polishing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10277928A true JPH10277928A (en) | 1998-10-20 |
Family
ID=13693568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7956697A Pending JPH10277928A (en) | 1997-03-31 | 1997-03-31 | Polishing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10277928A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000202762A (en) * | 1998-12-30 | 2000-07-25 | Applied Materials Inc | Carrier head with controllable pressure and loading area for chemical mechanical polishing |
| JP2003526527A (en) * | 2000-03-17 | 2003-09-09 | モトローラ・インコーポレイテッド | Wafer polishing head and polishing method |
| JP4833355B2 (en) * | 2008-08-29 | 2011-12-07 | 信越半導体株式会社 | Polishing head and polishing apparatus |
| CN102810518A (en) * | 2012-07-13 | 2012-12-05 | 日月光半导体制造股份有限公司 | Wafer carrier board structure and wafer bonding method |
-
1997
- 1997-03-31 JP JP7956697A patent/JPH10277928A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000202762A (en) * | 1998-12-30 | 2000-07-25 | Applied Materials Inc | Carrier head with controllable pressure and loading area for chemical mechanical polishing |
| JP2003526527A (en) * | 2000-03-17 | 2003-09-09 | モトローラ・インコーポレイテッド | Wafer polishing head and polishing method |
| JP4829458B2 (en) * | 2000-03-17 | 2011-12-07 | フリースケール セミコンダクター インコーポレイテッド | Wafer polishing head and polishing method |
| JP4833355B2 (en) * | 2008-08-29 | 2011-12-07 | 信越半導体株式会社 | Polishing head and polishing apparatus |
| CN102810518A (en) * | 2012-07-13 | 2012-12-05 | 日月光半导体制造股份有限公司 | Wafer carrier board structure and wafer bonding method |
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