JPH1027863A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH1027863A JPH1027863A JP8182523A JP18252396A JPH1027863A JP H1027863 A JPH1027863 A JP H1027863A JP 8182523 A JP8182523 A JP 8182523A JP 18252396 A JP18252396 A JP 18252396A JP H1027863 A JPH1027863 A JP H1027863A
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- power supply
- external connection
- semiconductor chip
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10689—Leaded Integrated Circuit [IC] package, e.g. dual-in-line [DIL]
Landscapes
- Wire Bonding (AREA)
Abstract
(57)【要約】
【課題】半導体パッケ−ジに於いて、ピン端子数の制限
のもとで、電源端子、入出力信号端子などを混在した形
で使用していた為、すべてのリ−ド端子を伝達信号用に
使用する事が不可能であった。
【解決手段】半導体パッケ−ジに電源電圧Vdd専用と
接地電圧Vss専用の導電性素材を使用し、さらにリ−
ド端子を設けることで、伝達信号と、電源電圧Vdd、
接地電圧vssとを分離する。これによりパッケ−ジ内
部のリ−ドフレ−ムは全て伝達信号のみで構成できる。
半導体チップ105内部の電源電圧Vdd部、あるいは
接地電圧Vss部に電位が半導体パッケ−ジの導電部分
101、102から供給される。この為リ−ドフレ−ム
部106を介す事がなく、リ−ドフレ−ムの端子数すべ
てを入出力信号伝達用として専用に使用する事が可能と
なる。
【効果】全ての入出力パッドを信号伝達系として使用で
きる。
(57) [Summary] [PROBLEMS] In a semiconductor package, a power supply terminal, an input / output signal terminal, and the like are used in a mixed state under the limitation of the number of pin terminals. Cannot be used for transmission signals. A semiconductor package is made of a conductive material dedicated to a power supply voltage Vdd and a conductive material dedicated to a ground voltage Vss.
By providing the power terminal, the transmission signal, the power supply voltage Vdd,
It is separated from the ground voltage vss. As a result, all the lead frames inside the package can be constituted only by transmission signals.
A potential is supplied to the power supply voltage Vdd portion or the ground voltage Vss portion inside the semiconductor chip 105 from the conductive portions 101 and 102 of the semiconductor package. Therefore, it is possible to use all the number of terminals of the lead frame exclusively for transmitting input / output signals without going through the lead frame section 106. [Effect] All input / output pads can be used as a signal transmission system.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体装置に関
し、特に最終的な製品の構成基板上での他の信号と半導
体装置内部との信号伝達経路の一部である半導体パッケ
−ジの構成において、電源電圧Vdd端子と接地電圧V
ss端子を他の信号伝達経路とは分離し、かつ、前記半
導体パッケ−ジの電源電圧Vdd端子及び接地電圧Vs
s端子に接続される電源電圧Vdd端子用のパッド及び
接地電圧Vss端子用のパッドを備えた半導体チップと
で構成する半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a structure of a semiconductor package which is a part of a signal transmission path between another signal on a component substrate of a final product and the inside of the semiconductor device. , Power supply voltage Vdd terminal and ground voltage V
The ss terminal is separated from other signal transmission paths, and the power supply voltage Vdd terminal of the semiconductor package and the ground voltage Vs
The present invention relates to a semiconductor device including a pad for a power supply voltage Vdd terminal connected to an s terminal and a semiconductor chip having a pad for a ground voltage Vss terminal.
【0002】[0002]
【従来の技術】図4に従来の半導体装置をパッケ−ジで
使用した一例を示す。2. Description of the Related Art FIG. 4 shows an example in which a conventional semiconductor device is used in a package.
【0003】図中401は、通常はプラスチックなどの
樹脂材で封入し、密閉しているが本発明の説明用に蓋形
状のもので示す。図中402は、半導体装置と半導体チ
ップに設けられた端子(以下「パッド」という。)部と
パッケ−ジ外部との信号伝達経路の外部接続用端子(以
下、「ピン」という。)とを接続するリ−ドフレ−ムで
ある。入力信号、または出力信号、または入出力信号、
さらに電源電圧Vdd、接地電圧Vssを外部から供
給、もしくは外部へ伝達する為のものである。図中40
3は半導体パッケ−ジから製品回路基板に実装するピン
である。図中404は半導体チップである。図中405
は半導体チップを封入する半導体パッケ−ジであり、通
常は図中401と同様にプラスチックなどの樹脂で形成
する。つまり図中404の半導体チップの電源電圧Vd
d、及び接地電圧Vssは他の入力信号、出力信号、ま
たは入出力信号と同等の扱いで図中402のリ−ドフレ
−ムを経て、図中403の半導体装置のピンを通して製
品回路基板に実装される。[0003] In the drawing, reference numeral 401 is usually enclosed by a resin material such as plastic and is hermetically sealed, but is shown in a lid shape for the explanation of the present invention. In the figure, reference numeral 402 denotes a terminal (hereinafter, referred to as a "pad") provided on a semiconductor device and a semiconductor chip and an external connection terminal (hereinafter, referred to as a "pin") for a signal transmission path between the package and the outside. This is the lead frame to be connected. Input signal, or output signal, or input / output signal,
Further, the power supply voltage Vdd and the ground voltage Vss are supplied from outside or transmitted to outside. 40 in the figure
3 is a pin mounted on the product circuit board from the semiconductor package. In the figure, reference numeral 404 denotes a semiconductor chip. 405 in the figure
Reference numeral denotes a semiconductor package for enclosing a semiconductor chip, which is usually formed of a resin such as plastic as in the case of 401 in the figure. That is, the power supply voltage Vd of the semiconductor chip 404 in the figure
d and the ground voltage Vss are handled in the same manner as other input signals, output signals, or input / output signals, and are mounted on a product circuit board through the lead frame of 402 in the figure and the pins of the semiconductor device in 403 in the figure. Is done.
【0004】[0004]
【発明が解決しようとする課題】この様な、図4に示す
従来の半導体装置は、半導体パッケ−ジ、及び半導体チ
ップにあらかじめ制限された入出力用端子数の中で、必
要な電源電圧Vdd数、接地電圧Vss数を確保し、残
りを入力端子、あるいは出力端子、入出力端子を構成
し、製品回路基板との信号のやりとりを実現している。
従って半導体チップの動作周波数や、最終製品の仕様に
よっては、信号伝達用の入出力信号端子数が増加し、電
源電圧Vdd端子、接地電圧Vss端子を充分に設けよ
うとすると、半導体チップ、または半導体パッケ−ジの
ピン端子数で制限した入出力端子用の数を越えてしま
い、最適な半導体チップ選択の妨げとなったり、半導体
チップサイズの増大を余儀なくしてしまう。The conventional semiconductor device shown in FIG. 4 has a required power supply voltage Vdd within a limited number of input / output terminals in advance in a semiconductor package and a semiconductor chip. The number and the number of ground voltages Vss are ensured, and the rest constitutes an input terminal, an output terminal, and an input / output terminal, thereby realizing signal exchange with a product circuit board.
Therefore, depending on the operating frequency of the semiconductor chip and the specifications of the final product, the number of input / output signal terminals for signal transmission increases, and if the power supply voltage Vdd terminal and the ground voltage Vss terminal are sufficiently provided, the semiconductor chip or the semiconductor The number of input / output terminals, which is limited by the number of pin terminals of the package, is exceeded, which hinders the selection of an optimum semiconductor chip or necessitates an increase in the size of the semiconductor chip.
【0005】[0005]
【課題を解決するための手段】上記課題は、少なくと
も、半導体チップの通常のピンには入出力信号を振り分
け、また、電源電圧Vdd端子及び接地電圧Vssにつ
いては、少なくとも2つ以上の導電性素材を、通常のリ
−ドフレ−ムとは別に設けて、それを利用することによ
り、前記入出力信号のピン端子とは別の専用ピン端子を
外部に設けて、そこから、半導体チップに電源電圧Vd
d及び接地電圧Vssを供給することによって解決でき
る。An object of the present invention is to at least distribute input / output signals to normal pins of a semiconductor chip, and to provide at least two or more conductive materials for a power supply voltage Vdd terminal and a ground voltage Vss. Is provided separately from a normal read frame, and by using the same, a dedicated pin terminal different from the pin terminal of the input / output signal is provided outside, and the power supply voltage is applied to the semiconductor chip therefrom. Vd
The problem can be solved by supplying d and the ground voltage Vss.
【0006】すなわち、請求項1記載の半導体装置は、
半導体チップに設けられた端子が外部接続用端子に接続
されてなる半導体装置において、前記半導体チップに設
けられた信号用端子に接続されてなる第1の外部接続用
端子と、前記半導体チップに設けられた電源用端子に接
続されてなる第2の外部接続用端子とを有し、前記第1
の外部接続用端子と前記第2の外部接続用端子とは異な
るリードフレームから形成されてなることを特徴とす
る。That is, the semiconductor device according to claim 1 is
In a semiconductor device in which a terminal provided on a semiconductor chip is connected to an external connection terminal, a first external connection terminal connected to a signal terminal provided on the semiconductor chip; And a second external connection terminal connected to the power supply terminal.
The terminal for external connection and the second terminal for external connection are formed from different lead frames.
【0007】また、請求項2み記載した半導体装置は、
請求項1記載の半導体装置において、前記第1の外部接
続用端子を形成するリードフレームの水平位置は前記第
2の外部接続用端子を形成するリードフレームの水平位
置とは異なることを特徴とする。Further, the semiconductor device described in claim 2 is
2. The semiconductor device according to claim 1, wherein a horizontal position of a lead frame forming the first external connection terminal is different from a horizontal position of a lead frame forming the second external connection terminal. .
【0008】また、請求項3記載の半導体装置は、請求
項2記載の半導体装置において、前記第2の外部接続用
端子の導電領域が前記第1の外部接続用端子の導電領域
よりも内側に配置されてなることを特徴とする。According to a third aspect of the present invention, in the semiconductor device according to the second aspect, the conductive region of the second external connection terminal is located inside the conductive region of the first external connection terminal. It is characterized by being arranged.
【0009】また、請求項4記載の半導体装置は、請求
項2又は請求項3記載の半導体装置において、前記第1
の外部接続用端子の形状と、前記第2の外部接続用端子
の形状が異なることを特徴とする。The semiconductor device according to claim 4 is the semiconductor device according to claim 2 or 3, wherein
Wherein the shape of the external connection terminal is different from the shape of the second external connection terminal.
【0010】[0010]
【作用】本発明の上記構成によれば、半導体チップ、ま
たは、半導体パッケ−ジにより端子数制限がある信号用
端子(信号用端子には入力端子、出力端子、双方向性入
出力端子等を含む。)から電源電圧Vdd端子、及び接
地電圧Vss端子を割り当てる必要がなく、信号伝達用
にだけ占有する事が可能となる。また、電源電圧Vdd
端子、及び接地電圧Vss端子を通常のピンの配置位置
とは異なったチップ中心方向への配置が可能となり、他
の信号線の妨げになる事もなく、供給電圧源を効率的に
広範囲で取り込む為、電圧降下などの不安要素も極めて
激減する。また、電源電圧Vdd端子、及び接地電圧V
ss端子等を通常のピン形状とは異なった形状で構成す
る事で、低抵抗、低インピーダンスの効果が期待でき、
更にボールグリッドアレイ手法などの混在実装も可能と
なる。According to the above construction of the present invention, a signal terminal whose number of terminals is limited by a semiconductor chip or a semiconductor package (the signal terminal includes an input terminal, an output terminal, a bidirectional input / output terminal, etc.). The power supply voltage Vdd terminal and the ground voltage Vss terminal do not need to be allocated, and can be occupied only for signal transmission. Also, the power supply voltage Vdd
The terminal and the ground voltage Vss terminal can be arranged in the direction of the center of the chip different from the arrangement position of the normal pins, and the supply voltage source is efficiently taken in a wide range without obstructing other signal lines. Therefore, anxiety factors such as a voltage drop are extremely reduced. Further, the power supply voltage Vdd terminal and the ground voltage V
By configuring the ss terminal etc. in a shape different from the normal pin shape, low resistance and low impedance effects can be expected,
Further, mixed mounting such as a ball grid array method is also possible.
【0011】[0011]
【発明の実施の形態】図1、図2、図3において、本発
明の実施例を示す。FIG. 1, FIG. 2, and FIG. 3 show an embodiment of the present invention.
【0012】図1では、本発明の半導体パッケ−ジを用
い半導体チップを封入した場合の一実施例を示してい
る。図中101、図中102は本発明の半導体パッケ−
ジの上辺の蓋部分である。通常はプラスチック等の樹脂
材で形成し、封入しているが、本発明の説明用に構成概
念図を記述している。図中101、102は、導電性の
素材で形成されており、図中103のピン端子を通し
て、最終製品の回路基板上の電源電圧ラインに、もう一
方は、接地電圧ラインと接続される。そして、図中10
5の半導体チップの内部回路部分の電源電圧Vdd部、
あるいは接地電圧Vss部に101、及び102を介し
て電位が供給される。図中104は入出力伝達信号専用
のピン端子である。各種入出力伝達信号は104から伝
達信号の送受を行う。図中106は従来のリ−ドフレ−
ムと同様に、最終製品回路基板から半導体チップ内部の
回路への信号伝達経路であり、あるいは半導体チップ内
部の回路から最終製品回路基板への信号伝達経路のリ−
ドフレ−ム部である。つまり、図中104と図中105
がリ−ドワイヤ−、もしくはフィルム状タブ等の手法で
接続される。前述の従来の技術ではこのリ−ドフレ−ム
の数の内で電源電圧Vdd端子、及び接地電圧Vss端
子を複数本ずつ設けなければならず、信号伝達用として
専用に使用するリ−ドフレ−ムの数が、電源電圧Vdd
端子と接地電圧Vss端子の総和分、制限されてしま
う。図1に示す本発明は、電源電圧Vdd端子と接地電
圧Vss端子を半導体パッケ−ジの導電部分である10
1、102から供給する為、図中106のリ−ドフレ−
ム部を介す事がなく、リ−ドフレ−ムの端子数すべて
を、入出力信号伝達用として専用に使用する事が可能と
なる。図中107は半導体パッケ−ジの上辺図中101
と図中102を図中106のリ−ドフレ−ムから電気的
に絶縁する為のものである。FIG. 1 shows an embodiment in which a semiconductor chip is sealed using the semiconductor package of the present invention. In the figure, 101 and 102 are semiconductor packages of the present invention.
This is the lid on the top side of Ji. Usually, it is formed of a resin material such as plastic and sealed, but a conceptual diagram of the structure is described for the description of the present invention. In the figure, reference numerals 101 and 102 are formed of a conductive material, and are connected to a power supply voltage line on a circuit board of a final product through a pin terminal 103 in the figure, and the other is connected to a ground voltage line. And 10 in the figure
5, a power supply voltage Vdd portion of an internal circuit portion of the semiconductor chip,
Alternatively, a potential is supplied to the ground voltage Vss section via 101 and 102. In the figure, reference numeral 104 denotes a pin terminal dedicated to an input / output transmission signal. Various input / output transmission signals are transmitted and received from 104. In the figure, reference numeral 106 denotes a conventional lead frame.
Like the system, the signal transmission path from the final product circuit board to the circuit inside the semiconductor chip or the signal transmission path from the circuit inside the semiconductor chip to the final product circuit board
This is a do-frame part. That is, 104 in the figure and 105 in the figure
Are connected by a method such as a lead wire or a film tab. In the prior art described above, a plurality of power supply voltage Vdd terminals and a plurality of ground voltage Vss terminals must be provided within the number of the lead frames, and the lead frames exclusively used for signal transmission are used. Is the power supply voltage Vdd
The total amount of the terminal and the ground voltage Vss terminal is limited. In the present invention shown in FIG. 1, a power supply voltage Vdd terminal and a ground voltage Vss terminal are connected to a conductive portion of a semiconductor package.
1 and 102, the lead frame 106 in the figure
It is possible to use all the number of terminals of the lead frame exclusively for transmitting input / output signals without passing through the frame section. 107 in the figure is 101 in the top view of the semiconductor package.
And for electrically isolating 102 in the figure from the lead frame 106 in the figure.
【0013】図2は本発明の半導体パッケ−ジの断面図
である。図中201は本発明の半導体パッケ−ジの蓋部
分である。図中202は半導体チップである。図中20
1に半導体チップ図中202を配置し、図中206の電
源ライン専用リ−ド部から半導体チップの内部回路電源
電圧Vddライン、もしくは接地電圧Vssラインに効
率良く接合する。この図中206の電源専用リ−ド部に
は、低抵抗素材等を使用し、バンプ等の技術により接合
する。電源専用リ−ドは、図1で説明した様に、さまざ
まな形状での設置が可能なので、配置制約が少なくな
り、図1の101、あるいは102、図2の図中206
の下部であれば、半導体チップの任意の場所に任意の数
だけ配置する事ができるので、電圧降下等による誤動作
は極めて少ない、安定した半導体回路を供給する事がで
きる。図中203は半導体チップの入出力信号専用のリ
−ド部で、図中204の半導体パッケ−ジのピン端子を
通じ、外部最終製品回路基板とインタ−フェ−スする。
図中205は半導体パッケ−ジの樹脂封入部分である。
図中207は、206と、入出力信号専用リ−ド部図中
203とが電気的にショ−トしない為の絶縁体である。
図中208は電源専用リ−ド部と半導体チップ図中20
3をバンプ等で接合したバンプ接合部を用いた場合の一
実施例である。図中209は半導体パッケ−ジを外部の
最終製品回路基板の電源ラインとの接続点である。FIG. 2 is a sectional view of a semiconductor package according to the present invention. In the figure, reference numeral 201 denotes a lid portion of the semiconductor package of the present invention. In the figure, reference numeral 202 denotes a semiconductor chip. 20 in the figure
1, a semiconductor chip 202 is arranged, and a power line dedicated lead portion 206 in the figure is efficiently joined to an internal circuit power supply voltage Vdd line or a ground voltage Vss line of the semiconductor chip. In the power-only lead portion 206 in the figure, a low-resistance material or the like is used and joined by a technique such as a bump. As described with reference to FIG. 1, the lead for exclusive use of the power supply can be installed in various shapes, so that the restriction on the arrangement is reduced, and 101 or 102 in FIG. 1 and 206 in FIG.
Below, any number of semiconductor chips can be arranged at any place on the semiconductor chip, so that a stable semiconductor circuit can be supplied with extremely few malfunctions due to a voltage drop or the like. In the figure, reference numeral 203 denotes a lead portion for input / output signals of the semiconductor chip, which interfaces with an external final product circuit board through a pin terminal of the semiconductor package 204 in the figure.
In the figure, reference numeral 205 denotes a resin-encapsulated portion of the semiconductor package.
In the figure, reference numeral 207 denotes an insulator for preventing the short circuit between the 206 and the read / write signal exclusive lead 203.
In the drawing, reference numeral 208 denotes a power-only lead portion and reference numeral 20 denotes a semiconductor chip.
This is an example of a case where a bump bonding portion obtained by bonding No. 3 with a bump or the like is used. In the figure, reference numeral 209 denotes a connection point between the semiconductor package and an external power supply line of the final product circuit board.
【0014】図3は基本的には図1と同様であるが、図
1の101、102と図3の301、302の電源専用
リ−ド部の形状を変化させた場合の一実施例である。図
中301、302は電源専用のリ−ド部である。図中3
03は電源専用のピン端子であり、最終製品基板に接続
される。図中304は入出力信号専用のピン端子であ
る。これは従来の技術と同様の仕様となる。図中305
は半導体チップである。図中306は入出力信号専用の
リ−ド部である。図中307は電源専用リ−ド部30
1、302と入出力信号専用リ−ド部とを電気的に分離
する絶縁体である。FIG. 3 is basically the same as FIG. 1, but shows an embodiment in which the shapes of the power-only leads 101 and 102 in FIG. 1 and 301 and 302 in FIG. 3 are changed. is there. In the figure, reference numerals 301 and 302 denote power-only leads. 3 in the figure
Reference numeral 03 denotes a pin terminal dedicated to a power supply, which is connected to a final product substrate. In the figure, reference numeral 304 denotes a pin terminal dedicated to input / output signals. This is the same specification as the conventional technology. 305 in the figure
Is a semiconductor chip. In the figure, reference numeral 306 denotes a lead section dedicated to input / output signals. In the figure, reference numeral 307 denotes a power-only lead section 30.
1, 302 and an insulator for electrically separating the input / output signal lead portion.
【0015】[0015]
【発明の効果】以上述べてきたように、半導体チップ内
部回路の電源電圧Vdd、もしくは接地電圧Vssを通
常のリ−ドフレ−ムとは別の、少なくとも2つ以上の第
1、第2の導電性素材を用いて、半導体チップに第1、
第2それぞれの電位を供給する事と、半導体パッケ−ジ
のピン端子として、入出力信号専用端子と電源専用ピン
端子とを設ける事と、それらと通じて最終製品回路基板
に接続する事で、従来からのリ−ドフレ−ムによる半導
体チップの内部回路と最終製品基板回路との伝達信号の
数を、電源電圧Vdd、あるいは接地電圧Vssに制限
される事なく、すべての数を入出力信号専用として使用
することが可能となり、結果として高集積、高信頼性の
半導体装置を提供することができる。As described above, the power supply voltage Vdd or the ground voltage Vss of the internal circuit of the semiconductor chip is set to at least two or more first and second conductors different from a normal lead frame. Using semiconductor materials, the first,
By supplying the respective second potentials, providing an input / output signal dedicated terminal and a power dedicated pin terminal as pin terminals of the semiconductor package, and connecting them to a final product circuit board, The number of signals transmitted between the internal circuit of the semiconductor chip and the final product substrate circuit by the conventional read frame is not limited to the power supply voltage Vdd or the ground voltage Vss, and all the numbers are dedicated to input / output signals. As a result, a highly integrated and highly reliable semiconductor device can be provided.
【図1】本発明の半導体パッケ−ジを使用し、半導体チ
ップを配置した場合の一実施例を示す図。FIG. 1 is a diagram showing one embodiment in which a semiconductor chip is arranged using a semiconductor package of the present invention.
【図2】本発明の半導体パッケ−ジを使用し、半導体チ
ップを配置した場合の断面図の一実施例を示した図。FIG. 2 is a diagram showing one embodiment of a cross-sectional view when a semiconductor chip is arranged using the semiconductor package of the present invention.
【図3】本発明の半導体パッケ−ジを使用し、半導体チ
ップを配置した場合の一実施例を示す図。FIG. 3 is a diagram showing one embodiment in which a semiconductor chip is arranged using the semiconductor package of the present invention.
【図4】従来の半導体装置における、半導体チップを半
導体パッケ−ジに封入した場合の一実施例を示した図。FIG. 4 is a diagram showing one embodiment of a conventional semiconductor device in which a semiconductor chip is sealed in a semiconductor package.
101・・・半導体パッケ−ジの上部蓋及び電源専用リ
−ド部 102・・・半導体パッケ−ジの上部蓋及び電源専用リ
−ド部 103・・・電源電圧Vdd、もしくは接地電圧Vss
供給リ−ド端子 104・・・入出力伝達信号専用ピン端子 105・・・半導体チップ。 106・・・リ−ドフレ−ム 107・・・絶縁体(絶縁膜) 108・・・半導体パッケ−ジ下部 201・・・半導体パッケ−ジの上部蓋及び電源専用リ
−ド部 202・・・半導体チップ 203・・・入出力伝達信号専用リ−ド部 204・・・入出力伝達信号専用ピン端子 205・・・半導体パッケ−ジ下部 206・・・電源専用リ−ド部 207・・・絶縁体(絶縁膜) 208・・・電源専用リ−ドバンプ接合部 209・・・電源専用ピン端子 301・・・半導体パッケ−ジの上部蓋及び電源専用リ
−ド部 302・・・半導体パッケ−ジの上部蓋及び電源専用リ
−ド部 303・・・電源電圧Vdd、もしくは接地電圧Vss
供給リ−ド端子 304・・・入出力伝達信号専用ピン端子 305・・・半導体チップ。 306・・・リ−ドフレ−ム 307・・・絶縁体(絶縁膜) 308・・・半導体パッケ−ジ下部 401・・・従来の半導体パッケ−ジの蓋 402・・・リ−ドフレ−ム 403・・・入出力端子 404・・・半導体チップ 405・・・半導体パッケ−ジの下部分Reference numeral 101: Upper cover of the semiconductor package and a lead portion dedicated to power supply 102 ... Upper cover of the semiconductor package and a lead portion dedicated to power supply 103: Power supply voltage Vdd or ground voltage Vss
Supply lead terminal 104: Pin terminal dedicated to input / output transmission signal 105: Semiconductor chip. 106: Lead frame 107: Insulator (insulating film) 108: Lower part of semiconductor package 201: Upper lid of semiconductor package and lead part exclusively for power supply 202 ... Semiconductor chip 203: Lead section dedicated to input / output transmission signals 204: Pin terminal dedicated to input / output transmission signals 205: Lower part of semiconductor package 206: Lead section dedicated to power supply 207: Insulation Body (insulating film) 208: Power supply dedicated lead bump junction 209: Power supply dedicated pin terminal 301: Upper cover of semiconductor package and power supply dedicated lead 302: Semiconductor package Upper lid and power supply lead section 303: power supply voltage Vdd or ground voltage Vss
Supply lead terminal 304 ... I / O transmission signal dedicated pin terminal 305 ... Semiconductor chip. 306: Lead frame 307: Insulator (insulating film) 308: Lower part of semiconductor package 401: Cover of conventional semiconductor package 402: Lead frame 403 ... I / O terminal 404 ... Semiconductor chip 405 ... Lower part of semiconductor package
Claims (4)
用端子に接続されてなる半導体装置において、前記半導
体チップに設けられた信号用端子に接続されてなる第1
の外部接続用端子と、前記半導体チップに設けられた電
源用端子に接続されてなる第2の外部接続用端子とを有
し、前記第1の外部接続用端子と前記第2の外部接続用
端子とは異なるリードフレームから形成されてなること
を特徴とする半導体装置。1. A semiconductor device having terminals provided on a semiconductor chip connected to external connection terminals, wherein a first terminal connected to a signal terminal provided on the semiconductor chip is provided.
, And a second external connection terminal connected to a power supply terminal provided on the semiconductor chip, wherein the first external connection terminal and the second external connection terminal A semiconductor device comprising a lead frame different from a terminal.
第1の外部接続用端子を形成するリードフレームの水平
位置は前記第2の外部接続用端子を形成するリードフレ
ームの水平位置とは異なることを特徴とする半導体装
置。2. The semiconductor device according to claim 1, wherein a horizontal position of a lead frame forming said first external connection terminal is different from a horizontal position of a lead frame forming said second external connection terminal. A semiconductor device characterized by the above-mentioned.
第2の外部接続用端子の導電領域が前記第1の外部接続
用端子の導電領域よりも内側に配置されてなることを特
徴とする半導体装置。3. The semiconductor device according to claim 2, wherein a conductive region of said second external connection terminal is disposed inside a conductive region of said first external connection terminal. Semiconductor device.
おいて、前記第1の外部接続用端子の形状と、前記第2
の外部接続用端子の形状が異なることを特徴とする半導
体装置。4. The semiconductor device according to claim 2, wherein a shape of said first external connection terminal and said second external connection terminal are different from each other.
Wherein the external connection terminals have different shapes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8182523A JPH1027863A (en) | 1996-07-11 | 1996-07-11 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8182523A JPH1027863A (en) | 1996-07-11 | 1996-07-11 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1027863A true JPH1027863A (en) | 1998-01-27 |
Family
ID=16119800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8182523A Withdrawn JPH1027863A (en) | 1996-07-11 | 1996-07-11 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1027863A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015005557A (en) * | 2013-06-19 | 2015-01-08 | 富士通株式会社 | Package packaging structure |
| US8952551B2 (en) | 2007-03-26 | 2015-02-10 | International Business Machines Corporation | Semiconductor package and method for fabricating the same |
-
1996
- 1996-07-11 JP JP8182523A patent/JPH1027863A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8952551B2 (en) | 2007-03-26 | 2015-02-10 | International Business Machines Corporation | Semiconductor package and method for fabricating the same |
| JP2015005557A (en) * | 2013-06-19 | 2015-01-08 | 富士通株式会社 | Package packaging structure |
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| Date | Code | Title | Description |
|---|---|---|---|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20040115 |