JPH10294202A - Positive characteristic thermistor and manufacturing method thereof - Google Patents
Positive characteristic thermistor and manufacturing method thereofInfo
- Publication number
- JPH10294202A JPH10294202A JP9101414A JP10141497A JPH10294202A JP H10294202 A JPH10294202 A JP H10294202A JP 9101414 A JP9101414 A JP 9101414A JP 10141497 A JP10141497 A JP 10141497A JP H10294202 A JPH10294202 A JP H10294202A
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- temperature coefficient
- powder
- coefficient thermistor
- positive temperature
- main component
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Abstract
(57)【要約】
【課題】 発熱体やスイッチング素子として用いられて
いる正の抵抗温度特性を有する正特性サーミスタにおい
て、還元性雰囲気下で使用された場合でも、特性劣化が
少なく、かつ高信頼性の素子を提供することを目的とす
る。
【解決手段】 チタン酸バリウム又はその固溶体からな
る主成分に、半導体化元素としてY,La,Sm等の希
土類元素の酸化物あるいはNb,Sb,Biの酸化物の
うち少なくとも一種類とSi,Mnの各酸化物を含む組
成物にM2Ti3O7粉末(但し、MはLi,Na,Kの
元素から選ばれる少なくとも一種類)が主成分1mol
に対して0.005〜0.03mol含まれることを特
徴とするものであり、耐還元性能が向上された正特性サ
ーミスタを得ることができる。PROBLEM TO BE SOLVED: To provide a positive temperature coefficient thermistor having a positive resistance temperature characteristic used as a heating element or a switching element, with little characteristic deterioration and high reliability even when used in a reducing atmosphere. It is an object of the present invention to provide an element having a neutral property. SOLUTION: A main component composed of barium titanate or a solid solution thereof, as a semiconducting element, at least one of oxides of rare earth elements such as Y, La, Sm or oxides of Nb, Sb, Bi and Si, Mn. M 2 Ti 3 O 7 powder (where M is at least one selected from the elements of Li, Na and K) in the composition containing each oxide of
And a positive temperature coefficient thermistor with improved reduction resistance performance can be obtained.
Description
【0001】[0001]
【発明の属する技術分野】本発明は特定の温度で抵抗値
が急激に増大する正特性サーミスタに関するものであ
り、特に還元性雰囲気下で使用された場合に特性劣化の
少ない高信頼性の正特性サーミスタおよびその製造方法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive temperature coefficient thermistor whose resistance value rapidly increases at a specific temperature, and more particularly to a highly reliable positive temperature coefficient characteristic which causes less characteristic deterioration when used in a reducing atmosphere. The present invention relates to a thermistor and a method for manufacturing the thermistor.
【0002】[0002]
【従来の技術】チタン酸バリウムに希土類元素を微量添
加すると半導体化し、そのキュリー点付近の温度で正の
抵抗温度特性(Positive Temperatu
reCoefficient:PTC特性)を示すこと
は従来より広く知られている。そのPTC特性を利用し
て、過電流保護用素子、温度制御用素子、モータ起動用
素子、消磁用素子、ヒータ用素子といったさまざまな用
途に応用されてきている。一方、このような正特性サー
ミスタの製造方法としては、以下に示した方法が一般に
用いられている。まず所定の組成となるように配合され
たセラミック原料を湿式ボールミルやディスパーミルな
どを用いて混合し、フィルタープレスやドラム型ドライ
ヤー等で脱水乾燥した後、これらの混合粉末を仮焼す
る。次に、この仮焼粉末を湿式ボールミルや媒体撹拌ミ
ル等により粉砕し、バインダーを加えスラリー状にした
ものをスプレードライヤー等により造粒し、所望の形状
に成形した後、本焼成を行い、得られた焼結体に電極を
形成させ最終製品とするものである。又、昨今ではこの
ような素子の使用される環境条件も厳しく、特に耐還元
性能が要求される用途も多岐にわたってきており、組成
面およびプロセス面での検討が活発になされてきてい
る。2. Description of the Related Art Barium titanate is converted into a semiconductor by adding a trace amount of a rare earth element, and has a positive resistance-temperature characteristic (Positive Temperatur) at a temperature near its Curie point.
It has been widely known to show reCoefficient (PTC characteristic). Utilizing the PTC characteristics, it has been applied to various uses such as an overcurrent protection element, a temperature control element, a motor starting element, a degaussing element, and a heater element. On the other hand, as a method of manufacturing such a PTC thermistor, the following method is generally used. First, ceramic raw materials blended to have a predetermined composition are mixed using a wet ball mill, a disper mill, or the like, dehydrated and dried using a filter press, a drum dryer, or the like, and then the mixed powder is calcined. Next, the calcined powder is pulverized by a wet ball mill, a medium stirring mill, or the like, and a slurry obtained by adding a binder is granulated by a spray drier or the like, formed into a desired shape, and then subjected to main baking. An electrode is formed on the obtained sintered body to obtain a final product. In recent years, the environmental conditions in which such devices are used are severe, and in particular, applications in which reduction resistance performance is required have been diversified.
【0003】[0003]
【発明が解決しようとする課題】このような正特性サー
ミスタの特性は結晶粒界に依存することが古くから指摘
されているが、還元性雰囲気や中性雰囲気中で使用した
場合には、抵抗値が大きく低下したり、抵抗温度係数が
著しく小さくなってしまうなどの特性劣化を起こす。特
にヒータ素子を用いた機器の使用条件下では、薬剤、衣
類の柔軟仕上げ剤、ガソリンや機械油、食用油、調味料
などの有機成分からなり素子に付着し、素子の発熱状態
ではこれらの有機成分の燃焼に伴う還元作用を引き起こ
し、種々の特性が劣化してしまうおそれがあり、そのた
めこういった有機成分との接触あるいは付着を防止する
必要があり、その使用用途が限定されていた。本発明は
上記のような用途に適合できる、耐還元性能に優れた正
特性サーミスタを提供することを目的とするものであ
る。It has long been pointed out that the characteristics of such a positive temperature coefficient thermistor depend on the crystal grain boundaries. However, when used in a reducing atmosphere or a neutral atmosphere, the resistance of the positive temperature coefficient thermistor becomes low. The characteristics are deteriorated such that the value is greatly reduced and the temperature coefficient of resistance is significantly reduced. In particular, under the operating conditions of equipment using a heater element, it is composed of organic components such as chemicals, fabric softeners, gasoline, machine oil, edible oil, and seasonings, and adheres to the element. There is a possibility that various characteristics may be degraded due to a reduction effect caused by the combustion of the components, so that it is necessary to prevent contact or adhesion with such organic components, and the use of the components has been limited. An object of the present invention is to provide a positive temperature coefficient thermistor excellent in reduction resistance performance, which can be adapted to the above uses.
【0004】[0004]
【課題を解決するための手段】還元性雰囲気中でのPT
C特性の劣化機構は、一般に酸素欠陥の生成により発生
した電子が伝導に寄与するためと考えられている。[MEANS FOR SOLVING THE PROBLEMS] PT in a reducing atmosphere
The mechanism of deterioration of the C characteristic is generally considered to be due to the fact that electrons generated by the generation of oxygen defects contribute to conduction.
【0005】従って、耐還元性能を向上させるために
は、 酸素欠陥が生成しないような(酸素を放出しにくい)
結晶構造にする。 還元性物質等が素子の内部に侵入しにくい緻密化され
た微細構造にする。 発生した電子をトラップするアクセプター的役割をす
る元素を導入する。 等が考えられる。[0005] Therefore, in order to improve the reduction resistance performance, it is necessary to prevent generation of oxygen vacancies (it is difficult to release oxygen).
Have a crystal structure. A dense microstructure in which a reducing substance or the like does not easily enter the inside of the element is formed. Introduce an element that acts as an acceptor to trap generated electrons. And so on.
【0006】本発明はこのような材料設計にもとづき組
成面および製造方法において鋭意研究した結果である。[0006] The present invention is the result of intensive studies on composition aspects and manufacturing methods based on such material design.
【0007】そこで上記目的を達成するために、本発明
の正特性サーミスタは、チタン酸バリウムあるいはその
固溶体を主成分とし、副成分として希土類元素あるいは
Nb,Sb,Biの酸化物の内少なくとも一種類と、S
iとMnの酸化物と、M2Ti3O7(但しMはLi,N
a,Kの元素から選ばれる少なくとも一種類)とを含有
することを特徴とするものであり、上記目的を達成する
ことができる。Therefore, in order to achieve the above object, a positive temperature coefficient thermistor of the present invention comprises barium titanate or a solid solution thereof as a main component, and at least one of rare earth elements and oxides of Nb, Sb and Bi as subcomponents. And S
i and Mn oxide and M 2 Ti 3 O 7 (where M is Li, N
and at least one element selected from the elements a and K), whereby the above object can be achieved.
【0008】[0008]
【発明の実施の形態】本発明の請求項1に記載の発明
は、チタン酸バリウムあるいはその固溶体を主成分と
し、副成分として希土類元素あるいはNb,Sb,Bi
の酸化物の内少なくとも一種類と、SiとMnの酸化物
と、M2Ti3O7(但しMはLi,Na,Kの元素から
選ばれる少なくとも一種類)とを含有することを特徴と
する正特性サーミスタであり、M2Ti3O7粉末により
粒界でのアクセプター濃度が増加し、還元状態で発生し
た電子がトラップされるため耐還元性能に優れた正特性
サーミスタを得ることができる。BEST MODE FOR CARRYING OUT THE INVENTION The invention according to claim 1 of the present invention comprises barium titanate or a solid solution thereof as a main component, and a rare earth element or Nb, Sb, Bi as a subcomponent.
Characterized in that it contains at least one oxide of the following, an oxide of Si and Mn, and M 2 Ti 3 O 7 (where M is at least one selected from the elements Li, Na and K). The acceptor concentration at the grain boundary is increased by the M 2 Ti 3 O 7 powder, and electrons generated in a reduced state are trapped, so that a positive thermistor excellent in reduction resistance performance can be obtained. .
【0009】請求項2に記載の発明は、M2Ti3O
7(但しMはLi,Na,Kの元素から選ばれる少なく
とも一種類)は、主成分1molに対して、0.005
〜0.03mol含有されることを特徴とする請求項1
に記載の正特性サーミスタであり、耐還元性能に優れた
素子を得ることができる。According to a second aspect of the present invention, there is provided M 2 Ti 3 O
7 (where M is at least one element selected from the elements of Li, Na, and K) is 0.005 to 1 mol of the main component.
2 to 0.03 mol.
And a device excellent in reduction resistance performance can be obtained.
【0010】請求項3に記載の発明は、チタン酸バリウ
ムあるいはその固溶体を主成分とし、副成分として希土
類元素あるいはNb,Sb,Biの酸化物の内少なくと
も一種類と、SiとMnの酸化物とを混合した混合粉を
仮焼して仮焼粉を得る第1の工程と、次にこの仮焼粉に
M2Ti3O7粉末(但しMはLi,Na,Kの元素から
選ばれる少なくとも一種類)を添加、混合して成形体を
形成する第2の工程と、次いでこの成形体を焼成して焼
結体を得る第3の工程とを備えた正特性サーミスタの製
造方法であり、PTC特性の発現部である粒界近傍にお
いてより効果的にアクセプター濃度が増加するため、よ
り耐還元性能に優れた正特性サーミスタを得ることがで
きる。According to a third aspect of the present invention, barium titanate or a solid solution thereof is a main component, and at least one of rare earth elements or oxides of Nb, Sb, and Bi as subcomponents, and an oxide of Si and Mn. A first step of obtaining a calcined powder by calcining a mixed powder obtained by mixing the above powder with M 2 Ti 3 O 7 powder (where M is selected from elements of Li, Na, and K) (At least one type) is added and mixed to form a molded body, and then a third step of firing the molded body to obtain a sintered body is a method for producing a positive temperature coefficient thermistor. In addition, since the acceptor concentration increases more effectively in the vicinity of the grain boundary, which is where PTC characteristics are exhibited, it is possible to obtain a PTC thermistor having more excellent reduction resistance performance.
【0011】請求項4に記載の発明は、第2の工程にお
いてM2Ti3O7(但しMはLi,Na,Kの元素から
選ばれる少なくとも一種類)、主成分1molに対し
て、0.005〜0.03mol添加することを特徴と
する請求項3に記載の正特性サーミスタの製造方法であ
り、耐還元性能に優れた素子を得ることができる。According to a fourth aspect of the present invention, in the second step, M 2 Ti 3 O 7 (where M is at least one selected from the elements of Li, Na and K), and 0 mol per 1 mol of the main component. The method for producing a positive temperature coefficient thermistor according to claim 3, wherein 0.005 to 0.03 mol is added, and an element excellent in reduction resistance performance can be obtained.
【0012】請求項5に記載の発明は、第2の工程にお
いて、M2Ti3O7粉末(但しMはLi,Na,Kの元
素から選ばれる少なくとも一種類)の平均粒子径を
DA、仮焼粉の平均粒子径をDBとすると、DAとDBの粒
径比DA/DBが1.0〜2.0となるようにする請求項
3あるいは請求項4に記載の正特性サーミスタの製造方
法であり、粒内成分との反応が抑制されるため、より効
果的に粒界での請求項3または4の作用が達成されるこ
とにより、さらなる耐還元性能の優れた正特性サーミス
タを得ることができる。[0012] The invention according to claim 5, in a second step, M 2 Ti 3 O 7 powder (where M is Li, Na, at least one selected from the elements K) an average particle diameter of D A When the average particle diameter of the calcined powder and D B, according to claim 3 or claim 4 particle size ratio D a / D B of D a and D B is set to be 1.0 to 2.0 The reaction of the positive characteristic thermistor of the above is suppressed, and the reaction with the intragranular component is suppressed, so that the effect of claim 3 or 4 at the grain boundary is more effectively achieved, thereby further improving the reduction resistance performance. A positive temperature coefficient thermistor can be obtained.
【0013】以下実施の形態により本発明について説明
する。 (実施の形態1)まず、(Ba0.90Pb0.10)TiO3
+0.02SiO2+0.001MnO2+0.002N
b2O5の組成となるようにBaCO3,PbO,Ti
O2,Nb2O5,SiO2,MnO2をそれぞれ秤量し、
同時にNa2Ti3O7粉末(以下、NTO粉末と略記す
る。)を(表1)になるように主成分1molに対して
秤量し、すべての原料をボールミルにて湿式混合する。Hereinafter, the present invention will be described with reference to embodiments. (Embodiment 1) First, (Ba 0.90 Pb 0.10 ) TiO 3
+ 0.02SiO 2 + 0.001MnO 2 + 0.002N
BaCO 3 , PbO, Ti so that the composition becomes b 2 O 5
O 2 , Nb 2 O 5 , SiO 2 and MnO 2 were weighed,
At the same time, Na 2 Ti 3 O 7 powder (hereinafter abbreviated as NTO powder) is weighed with respect to 1 mol of the main component so as to become (Table 1), and all the raw materials are wet-mixed with a ball mill.
【0014】[0014]
【表1】 [Table 1]
【0015】次にこの混合物を乾燥した後、1050℃
で2時間仮焼する。その後再びボールミルにて湿式粉砕
し、乾燥する。次にこの乾燥粉砕粉にポリビニルアルコ
ールからなるバインダーを添加し造粒し、1平方センチ
メートル当たり800kgの圧力で直径20mm、厚さ
2.5mmの円板状に成形した。次に、この成形体を1
300℃で2時間空気中で焼成し焼結体を得た。次にこ
のようにして得られた焼結体にNiメッキを形成した
後、銀ペーストを印刷塗布、焼き付けし電極とした。次
に、このように作製した試料の評価として室温抵抗値R
25、抵抗温度係数α、抵抗変化幅(Ψ)の測定を行った
後、さらに耐還元性能の評価として、窒素ガス中で10
0時間、100Vの電圧を印加して再び、R25、α、Ψ
を測定した。Next, after drying this mixture,
And calcine for 2 hours. Then, wet grinding is performed again with a ball mill and drying is performed. Next, a binder made of polyvinyl alcohol was added to the dried and pulverized powder, and the mixture was granulated to form a disc having a diameter of 20 mm and a thickness of 2.5 mm at a pressure of 800 kg per square centimeter. Next, this molded body is
It was fired in air at 300 ° C. for 2 hours to obtain a sintered body. Next, after a Ni plating was formed on the thus obtained sintered body, a silver paste was printed and baked to form an electrode. Next, at room temperature resistance R
25 After measuring the temperature coefficient of resistance α and the width of change in resistance (Ψ), the resistance to reduction was further evaluated in nitrogen gas.
For 0 hour, a voltage of 100 V is applied and R 25 , α, Ψ
Was measured.
【0016】それらの結果を(表1)に示した。尚、
(表1)の試料番号1は上記と同様な組成でNTO粉末
が無添加で上記と同様な工程により作製した試料であ
る。The results are shown in (Table 1). still,
Sample No. 1 in Table 1 is a sample having the same composition as described above and prepared by the same process as above without the addition of NTO powder.
【0017】ここで、抵抗温度係数は次式に従い求め
た。 [ln(R2/R1)/(T2−T1)]×100(%/
℃) 但し、R1,T1;R25の2倍の抵抗値およびその時の温
度 R2,T2;(T1+30)℃の抵抗値およびその温度で
ある。Here, the temperature coefficient of resistance was determined according to the following equation. [Ln (R 2 / R 1 ) / (T 2 −T 1 )] × 100 (% /
° C) where R 1 , T 1 ; twice the resistance value of R 25 and the temperature at that time R 2 , T 2 ; the resistance value of (T 1 +30) ° C. and its temperature.
【0018】(表1)から明らかなように、NTO粉末
の添加量が本発明の範囲内である試料番号3〜8の素子
は本発明の範囲外である試料番号1,2,9および10
の試料と比較して特性の劣化が認められず、抵抗変化幅
Ψの減少は少なくなり耐還元性能の向上が認められる。As is clear from Table 1, the devices of Sample Nos. 3 to 8 in which the amount of NTO powder added is within the range of the present invention are Sample Nos. 1, 2, 9 and 10 which are out of the range of the present invention.
No deterioration of the characteristics was observed as compared with the sample No. 2, and the decrease in the resistance change width 少 な く was small, and improvement in the reduction resistance performance was observed.
【0019】(実施の形態2)まず、(Ba0.90Pb
0.10)TiO3+0.02SiO2+0.001MnO2
+Nb2O5の組成となるようにBaCO3,PbO,T
iO2,Nb2O5,SiO 2,MnO2をそれぞれ秤量
し、ボールミルにて湿式混合する。次にこの混合物を乾
燥した後、1050℃で2時間仮焼する。この仮焼粉に
NTO粉末を(表2)の試料番号11〜20の添加量に
なるように主成分1molに対して秤量添加しボールミ
ルにて湿式混合する。(Embodiment 2) First, (Ba0.90Pb
0.10) TiOThree+ 0.02SiOTwo+ 0.001MnOTwo
+ NbTwoOFiveBaCO so that the composition becomesThree, PbO, T
iOTwo, NbTwoOFive, SiO Two, MnOTwoWeigh each
And wet mixing with a ball mill. Then dry this mixture.
After drying, it is calcined at 1050 ° C. for 2 hours. To this calcined powder
NTO powder was added to sample Nos. 11-20 in Table 2
Weighed to 1 mol of the main component
And wet-mix.
【0020】[0020]
【表2】 [Table 2]
【0021】その混合物を乾燥した後(実施の形態1)
と同様に、造粒、成形、焼成し電極を形成させ正特性サ
ーミスタ素子を得る。得られた素子の電気特性および耐
還元性の評価を(実施の形態1)と同様な方法で測定す
る。その評価結果を(表2)の試料番号11〜20に示
した。After drying the mixture (Embodiment 1)
In the same manner as described above, granulation, molding, and firing are performed to form an electrode, and a PTC thermistor element is obtained. The evaluation of the electrical characteristics and reduction resistance of the obtained device is performed in the same manner as in (Embodiment 1). The evaluation results are shown in Sample Nos. 11 to 20 in (Table 2).
【0022】(表2)より明らかなように、本発明の範
囲内にある試料番号13〜18のようにNTO粉末を仮
焼工程後に添加することによりさらに耐還元性能に優れ
た素子を得ることができるが、NTO粉末を仮焼後に添
加しても試料番号12,19および20のように添加量
が本発明の範囲外であると特性が劣化し耐還元性能の向
上が認められない。尚、試料番号11は試料番号1と同
試料で比較例である。As is clear from Table 2, by adding the NTO powder after the calcination step as in Sample Nos. 13 to 18 within the scope of the present invention, a device having more excellent reduction resistance can be obtained. However, even if the NTO powder is added after calcination, if the added amount is out of the range of the present invention as in Sample Nos. 12, 19 and 20, the characteristics are deteriorated and no improvement in reduction resistance is observed. Sample No. 11 is the same sample as Sample No. 1 and is a comparative example.
【0023】(実施の形態3)まず、(Ba0.90Pb
0.10)TiO3+0.02SiO2+0.001MnO2
+0.002Nb2O5の組成となるようにBaCO3,
PbO,TiO2,Nb2O5,SiO2,MnO2をそれ
ぞれ秤量し、ボールミルにて湿式混合する。次にこの混
合物を乾燥した後、1050℃で2時間仮焼する。この
仮焼粉にNTO粉末を主成分1molに対して0.02
0mol添加混合する。このときNTO粉末の平均粒子
径をDA、仮焼粉末の平均粒子径をDBとするとき、DA
とDBの粒径比DA/DBを(表3)のように調整し添加
混合する。(Embodiment 3) First, (Ba 0.90 Pb
0.10 ) TiO 3 + 0.02SiO 2 + 0.001MnO 2
BaCO 3 , so as to have a composition of +0.002 Nb 2 O 5 .
PbO, TiO 2 , Nb 2 O 5 , SiO 2 and MnO 2 are respectively weighed and wet-mixed in a ball mill. Next, after drying this mixture, it is calcined at 1050 ° C. for 2 hours. In this calcined powder, NTO powder was added in an amount of 0.02 to 1 mol of the main component.
Add 0 mol and mix. When the average particle diameter D A of NTO powder this time, the average particle diameter of the calcined powder and D B, D A
And adjusting the addition mixed as the particle size ratio D A / D B of D B (Table 3).
【0024】[0024]
【表3】 [Table 3]
【0025】以降の試料作製工程は(実施の形態1)と
同様に、造粒、成形、焼成し電極を形成し正特性サーミ
スタを得た。このように得られた素子の電気特性および
耐還元性の評価を(実施の形態1)と同様に測定し評価
した。その評価結果を(表3)に示した。In the subsequent sample preparation process, as in (Embodiment 1), an electrode was formed by granulation, molding and firing to obtain a PTC thermistor. The electrical characteristics and reduction resistance of the device thus obtained were measured and evaluated in the same manner as in (Embodiment 1). The evaluation results are shown in (Table 3).
【0026】(表3)から明らかなようにDA/DBが
1.0〜2.0である本発明の範囲内である試料番号2
3〜28の試料は、本発明の範囲外である試料番号2
1,22,29および30の試料と比較して耐還元性能
が向上することがわかる。The sample (Table 3) D A / D B As is clear from within the scope of the present invention which is a 1.0 to 2.0 No. 2
Samples Nos. 3 to 28 are Sample No. 2 which is outside the scope of the present invention.
It can be seen that the reduction resistance performance is improved as compared with the samples 1, 22, 29 and 30.
【0027】尚、本発明における半導体化元素量は主成
分1molに対して0.001〜0.004mol、S
iO2量は0.01〜0.05mol、MnO2量は0.
0001〜0.0015molの範囲で添加するのが好
ましい。なぜなら、これらの範囲外であると室温での抵
抗値が大きく上昇したり、抵抗温度係数が低くなるため
である。In the present invention, the amount of semiconducting elements is 0.001 to 0.004 mol per 1 mol of the main component, and S
iO 2 amount 0.01~0.05mol, the MnO 2 amount of 0.
It is preferable to add in the range of 0001 to 0.0015 mol. This is because if the temperature is outside these ranges, the resistance value at room temperature greatly increases or the temperature coefficient of resistance decreases.
【0028】一方、上記の(実施の形態)ではM2Ti3
O7粉末でMがNaのみの実施の形態を示したが、Kお
よびLiで行っても同様に耐還元性の向上された正特性
サーミスタが得られる。On the other hand, in the above (embodiment), M 2 Ti 3
Although the embodiment in which only M is Na in the O 7 powder has been described, a positive temperature coefficient thermistor having similarly improved reduction resistance can be obtained by using K and Li.
【0029】以上(実施の形態1)〜(実施の形態3)
に示したように、本発明の正特性サーミスタおよびその
製造方法を用いることにより、耐還元性能に優れた正特
性サーミスタを得ることができる。(Embodiment 1) to (Embodiment 3)
As described above, by using the positive temperature coefficient thermistor of the present invention and the method of manufacturing the same, a positive temperature coefficient thermistor having excellent reduction resistance performance can be obtained.
【0030】[0030]
【発明の効果】以上の説明より明らかなように、本発明
は、チタン酸バリウム又はその固溶体からなる主成分
に、半導体化元素としてY,La,Sm等の希土類元素
の酸化物あるいはNb,Sb,Biの酸化物のうち少な
くとも一種類とSi,Mnの各酸化物を含む組成物にM
2Ti3O7粉末(但し、MはLi,Na,Kの元素から
選ばれる少なくとも一種類)が主成分1molに対して
0.005〜0.03mol含まれることを特徴とする
ものであり、その結果、還元雰囲気中で使用されても特
性劣化の少ない正特性サーミスタを得ることができ、そ
の工業的利用価値は大きい。As is apparent from the above description, the present invention relates to a method in which a main component consisting of barium titanate or a solid solution thereof includes a rare earth element oxide such as Y, La, Sm or Nb, Sb as a semiconducting element. , Bi and at least one oxide of Si and Mn
2 Ti 3 O 7 powder (where, M is Li, Na, at least one selected from the elements of K) is characterized in that is included 0.005~0.03mol with respect to the main component 1 mol, As a result, it is possible to obtain a positive temperature coefficient thermistor with little characteristic deterioration even when used in a reducing atmosphere, and its industrial use value is great.
Claims (5)
主成分とし、副成分として希土類元素あるいはNb,S
b,Biの酸化物の内少なくとも一種類と、SiとMn
の酸化物と、M2Ti3O7(但しMはLi,Na,Kの
元素から選ばれる少なくとも一種類)とを含有すること
を特徴とする正特性サーミスタ。A barium titanate or a solid solution thereof as a main component, and a rare earth element or Nb, S as a subcomponent.
b and Bi oxides, at least one of Si and Mn
And M 2 Ti 3 O 7 (where M is at least one selected from the elements of Li, Na and K).
の元素から選ばれる少なくとも一種類)は、主成分1m
olに対して、0.005〜0.03mol含有される
ことを特徴とする請求項1に記載の正特性サーミスタ。2. M 2 Ti 3 O 7 (where M is Li, Na, K
At least one element selected from the group consisting of
2. The positive temperature coefficient thermistor according to claim 1, wherein the content is 0.005 to 0.03 mol based on ol.
主成分とし、副成分として希土類元素あるいはNb,S
b,Biの酸化物の内少なくとも一種類と、SiとMn
の酸化物とを混合した混合粉を仮焼して仮焼粉を得る第
1の工程と、次にこの仮焼粉にM2Ti3O7粉末(但し
MはLi,Na,Kの元素から選ばれる少なくとも一種
類)を添加、混合して成形体を形成する第2の工程と、
次いでこの成形体を焼成して焼結体を得る第3の工程と
を備えた正特性サーミスタの製造方法。3. Barium titanate or a solid solution thereof as a main component, and a rare earth element or Nb, S as a subcomponent.
b and Bi oxides, at least one of Si and Mn
A first step of obtaining a calcined powder by calcining a mixed powder obtained by mixing the oxide of the present invention with an oxide of M 2 Ti 3 O 7 (where M is an element of Li, Na, K) A second step of adding and mixing to form a molded body,
And a third step of firing the formed body to obtain a sintered body.
MはLi,Na,Kの元素から選ばれる少なくとも一種
類)、主成分1molに対して、0.005〜0.03
mol添加することを特徴とする請求項3に記載の正特
性サーミスタの製造方法。4. In the second step, M 2 Ti 3 O 7 (where M is at least one element selected from the elements of Li, Na and K), and 0.005 to 0.03 with respect to 1 mol of the main component.
The method for producing a positive temperature coefficient thermistor according to claim 3, wherein mol is added.
(但しMはLi,Na,Kの元素から選ばれる少なくと
も一種類)の平均粒子径をDA、仮焼粉の平均粒子径を
DBとすると、DAとDBの粒径比DA/DBが1.0〜
2.0となるようにする請求項3あるいは請求項4に記
載の正特性サーミスタの製造方法。5. In the second step, the average particle diameter of M 2 Ti 3 O 7 powder (where M is at least one selected from the elements of Li, Na, and K) is D A , and the average particle of calcined powder is When the diameter is D B, 1.0 to particle diameter ratio D a / D B of D a and D B
The method of manufacturing a positive temperature coefficient thermistor according to claim 3 or 4, wherein the temperature is 2.0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9101414A JPH10294202A (en) | 1997-04-18 | 1997-04-18 | Positive characteristic thermistor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9101414A JPH10294202A (en) | 1997-04-18 | 1997-04-18 | Positive characteristic thermistor and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10294202A true JPH10294202A (en) | 1998-11-04 |
Family
ID=14300057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9101414A Pending JPH10294202A (en) | 1997-04-18 | 1997-04-18 | Positive characteristic thermistor and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10294202A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010241684A (en) * | 2010-05-25 | 2010-10-28 | Hitachi Metals Ltd | Semiconductor ceramic composition |
-
1997
- 1997-04-18 JP JP9101414A patent/JPH10294202A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010241684A (en) * | 2010-05-25 | 2010-10-28 | Hitachi Metals Ltd | Semiconductor ceramic composition |
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