JPH10294249A - How to create electron beam direct drawing data - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electron beam (E) for a device including various patterns.
B) At the time of direct drawing data conversion, high-precision drawing is performed by optimizing the figure calculation process for each pattern. Based on device design data including a plurality of patterns, cells A, B, and C that match conditions set in advance based on the type, size, arrangement position, drawing density, and the like of the pattern.
The data structure 6 of the drawing data is reconstructed by extracting and separating C and sorting (converting into macro cells).
By applying the optimum graphic calculation process and its parameters for each of these macro cells, the drawing accuracy can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam (EB) direct writing data creating method for creating direct writing data used for electron beam (EB) direct writing.

[0002]

2. Description of the Related Art In recent years, in the manufacture of semiconductors, the density of devices has been increasing, and in lithography for forming a fine pattern on a semiconductor wafer, the design rules have become finer. For this reason, X-ray lithography using X-rays and electron beam lithography using an electron beam have been developed as next-generation lithography methods as lithography technologies replacing photolithography using ultraviolet light.

In electron beam lithography using an electron beam, design data designed by CAD or the like is converted into data for drawing (data conversion), and a pattern is drawn directly on a semiconductor wafer based on the drawing data. . At the time of the data conversion, various graphic operation processes such as an overlap removal process and a proximity effect correction process are performed.

[0004] Semiconductor devices include various patterns. In particular, in the chip 4 shown in FIG. 5, an array pattern cell 1 in which a plurality of identical cells are arranged in an array, an isolated pattern cell 2 having an extremely small pattern area density such as an isolated line, and an isolated space pattern cell 3 having a large pattern. However, a graphic operation process suitable for each of the types and arrangements of the patterns is required.

Conventionally, in all cases of graphic calculation processing such as overlap removal calculation, hardware-based proximity effect correction processing, or proximity effect correction processing on software at the time of data conversion, all patterns are processed. Drawing is performed by applying the same processing, so that it is impossible to set different graphic operation processing or different processing parameters depending on the pattern.

[0006]

When drawing is performed using drawing data created by the conventional EB direct drawing data creation method, drawing cannot be performed by applying graphic operation processing such as proximity effect correction for each pattern. For this reason, there is a problem that the proximity effect correction cannot be compatible with each pattern, and the correction accuracy is deteriorated.

Further, the correction method can be changed by processing only a portion of the graphic operation process to be applied to be changed as another drawing file.
The data conversion operation becomes complicated, and the conversion time also increases.
Also, at the time of drawing, there is a problem that drawing time is increased because the drawing is performed by overlapping a plurality of drawing files.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an electron beam direct writing data creating method for performing high-accuracy writing by optimizing a graphic operation process for each pattern.

[0009]

In order to achieve the above object, an electron beam direct writing data creating method according to the present invention is a method for creating data used for electron beam (EB) direct writing, wherein design data is configured. A cell is extracted and separated from each cell for each arbitrary pattern group to reconstruct data.

In extracting and separating the pattern,
The pattern groups to be extracted / separated are a repetition pattern for each arbitrary shape, a slit between adjacent large patterns (isolated space pattern), and a pattern with extremely low pattern density (isolated line pattern).

In the above-described pattern extraction / separation method, extraction / separation is performed based on a pattern size, the number of pattern arrangements, a distance between patterns, and a pattern area density.

Further, different graphic operation processing is applied to each of the pattern groups.

[0013]

[Function] When format conversion from design data designed by CAD to direct drawing data is performed, there is a problem in drawing such as a large influence of proximity effect based on information such as pattern size, shape, arrangement position, density and the like. Cells are automatically extracted and separated.

The data structure is reconstructed (macro cell conversion) by collecting and sorting the cells to which the same graphic operation processing is applied from the separated cell group. The optimum figure calculation process is applied to each macro cell.

Based on the drawing data thus converted, E
At the time of direct drawing in B, drawing is performed while performing optimal processing for each pattern.

As described above, by performing a different graphic calculation process for each pattern using a macro cell, an optimum correction process can be performed, and thus the drawing accuracy can be improved.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1 is a view for explaining an electron beam (EB) direct drawing data creation method according to Embodiment 1 of the present invention.

When the device pattern as shown in FIG. 1 is drawn on the chip 4 by using the electron beam direct drawing (EB) method, each region of the cell array pattern 5 in which a plurality of identical cells are developed in an array ( The cells A, B, and C are drawn by the partial batch EB direct writing method using the partial batch mask, and the areas located around the respective areas (cells) A, B, and C are drawn by the variable shaping EB direct writing method. .

Here, in the data conversion of the device pattern on the chip 4, by referring to the number of the same cells s, t, u developed in the array, the cell structure 6 to the cell A,
The data of B and C are extracted and separated from the design data, and the extracted and separated cells A, B and C are reconfigured as a partial batch macro cell X to restructure the cell structure 6. The proximity effect correction method corresponding to the partial cell is applied to the macro cell X of the cell structure 6, and the normal proximity effect correction method is applied to the other cells, for example, the cells H and P. At the time of drawing, drawing is performed according to the conditions indicated by the drawing data.

(Embodiment 2) FIG. 2 is a view for explaining a method of creating electron beam (EB) direct drawing data according to Embodiment 2 of the present invention.

When a device pattern as shown in FIG. 2 is drawn on the chip 4 by the EB direct drawing method, each region (cell) D, E, F of the isolated space pattern 7 is composed of cells s, If the distance between the t, u, and v patterns is 0.
When each area D, E, F of the isolated space pattern 7 is drawn, the deposition energy from the neighboring cells s, t, u, v contained in each area D, E, F is accumulated. Phenomenon such as the space width between the patterns becomes narrow or scum occurs.

Here, in the data conversion of the device pattern on the chip 4, each cell s, t, u, v is set to 0.2.
Each region D, E, F of the isolated space pattern 7 arranged at a distance of not more than μm is extracted and separated from the design data, and each region D, E, F of the extracted and separated isolated space pattern 7 is isolated. Reconfigure as a space macro cell Y. The resizing process or the contour process is applied to the macro cell Y of the isolated space pattern 7, and the normal proximity effect correction method is applied to the other cells, for example, the cells H and P. At the time of drawing, drawing is performed according to the conditions indicated by the drawing data.

(Embodiment 3) FIG. 3 is a diagram for explaining a method for creating electron beam (EB) direct drawing data according to Embodiment 3 of the present invention.

When a device pattern as shown in FIG. 3 is drawn on the chip 4 by using the EB direct writing method, cells s,
Each of the regions (cells) C, H, and I of the isolated pattern 8 in which the pattern area density of t and u is 20% or less is smaller than the design value.

Here, in the pattern data conversion on the chip 4, cells G, H, and I having an area density of 20% or less based on the pattern area density of each cell s, t, u are extracted from the design data. Separating and reconstructing the extracted and separated cells G, H, and I as the macro cell Z of the isolated pattern 8. For this macro cell Z, a resizing process,
Alternatively, an exposure rank process different from that of other portions is applied, and a normal proximity effect correction method is applied to other portions. At the time of drawing, drawing is performed according to the conditions indicated by the drawing data.

[0027]

[Fourth Embodiment] FIG. 4 is a view for explaining an electron beam (EB) direct drawing data creation method according to a fourth embodiment of the present invention.

The cells 9 constituting the device pattern on the chip 4 as shown in FIG. 4 include cells A and B developed in an array, isolated patterns C and D, and isolated patterns E and F having a low drawing density. It is.

Here, in the data conversion of this pattern, the number of cells A to F developed in the array and each cell A to F
Each of the cells A to F is extracted and reconfigured as a partial collective macro cell, an isolated space macro cell, and an isolated pattern macro cell based on the pattern size and arrangement position of the pattern F and the pattern area density. Different proximity effect correction processing and proximity effect correction power meter are applied to these macro cells.

Here, the proximity effect correction using the mask is used for the partial collective macro cell X, and the parameter for the isolated space macro cell Y is set such that the proximity effect is larger than the normal proximity effect correction. On the other hand, for the isolated pattern macro cell Z, a parameter which is expected to have less proximity effect than usual is applied. When drawing,
Drawing is performed according to the conditions shown in the drawing data.

[0031]

As described above, according to the present invention, it is possible to change the graphic calculation processing method such as the proximity effect correction processing and the parameters thereof for each pattern to the optimum one, thereby improving the drawing accuracy. be able to.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a second embodiment of the present invention.

FIG. 3 is a diagram illustrating a third embodiment of the present invention.

FIG. 4 is a diagram illustrating a fourth embodiment of the present invention.

FIG. 5 is a diagram illustrating a conventional example.

[Explanation of symbols]

 Reference Signs List 1 array pattern cell 2 isolated pattern cell 3 isolated space pattern cell 4 chip 5 cell array pattern 6 cell structure 7 isolated space pattern 8 isolated pattern 9 device configuration cell

Claims (4)

[Claims] 1. An electron beam direct writing data creating method for creating data used for electron beam direct writing, wherein cells are extracted and separated for each arbitrary pattern group from each cell constituting design data, and A method for creating electron beam direct writing data, characterized by reconstructing the data. 2. A pattern group to be extracted and separated in the pattern extraction and separation includes a repetition pattern for each arbitrary shape, a slit (isolated space pattern) between adjacent large patterns, and an extremely small pattern density. 2. The method according to claim 1, wherein the pattern is a small pattern (isolated line pattern). 3. The electron beam direct writing according to claim 1, wherein in the pattern extraction / separation method, extraction / separation is performed based on a pattern size, the number of pattern arrangements, a distance between patterns, and a pattern area density. Data creation method. 4. The method according to claim 1, wherein different graphic operation processing is applied to each of the pattern groups.