JPH10300428A5 - - Google Patents

Info

Publication number
JPH10300428A5
JPH10300428A5 JP1998040603A JP4060398A JPH10300428A5 JP H10300428 A5 JPH10300428 A5 JP H10300428A5 JP 1998040603 A JP1998040603 A JP 1998040603A JP 4060398 A JP4060398 A JP 4060398A JP H10300428 A5 JPH10300428 A5 JP H10300428A5
Authority
JP
Japan
Prior art keywords
pattern
monitor
diffracted light
intensity
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998040603A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10300428A (ja
JP4327266B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP04060398A priority Critical patent/JP4327266B2/ja
Priority claimed from JP04060398A external-priority patent/JP4327266B2/ja
Priority to US09/030,510 priority patent/US6423977B1/en
Publication of JPH10300428A publication Critical patent/JPH10300428A/ja
Publication of JPH10300428A5 publication Critical patent/JPH10300428A5/ja
Application granted granted Critical
Publication of JP4327266B2 publication Critical patent/JP4327266B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP04060398A 1997-02-26 1998-02-23 パターン寸法評価方法及びパターン形成方法 Expired - Fee Related JP4327266B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP04060398A JP4327266B2 (ja) 1997-02-26 1998-02-23 パターン寸法評価方法及びパターン形成方法
US09/030,510 US6423977B1 (en) 1997-02-26 1998-02-25 Pattern size evaluation apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4224597 1997-02-26
JP9-42245 1997-02-26
JP04060398A JP4327266B2 (ja) 1997-02-26 1998-02-23 パターン寸法評価方法及びパターン形成方法

Publications (3)

Publication Number Publication Date
JPH10300428A JPH10300428A (ja) 1998-11-13
JPH10300428A5 true JPH10300428A5 (2) 2005-08-25
JP4327266B2 JP4327266B2 (ja) 2009-09-09

Family

ID=26380079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04060398A Expired - Fee Related JP4327266B2 (ja) 1997-02-26 1998-02-23 パターン寸法評価方法及びパターン形成方法

Country Status (2)

Country Link
US (1) US6423977B1 (2)
JP (1) JP4327266B2 (2)

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JP2000082661A (ja) 1998-07-02 2000-03-21 Toshiba Corp 加熱装置，加熱装置の評価法及びパタ―ン形成方法
US6737207B2 (en) * 2000-04-25 2004-05-18 Nikon Corporation Method for evaluating lithography system and method for adjusting substrate-processing apparatus
IL140179A (en) * 2000-12-07 2004-09-27 Nova Measuring Instr Ltd Method and system for measuring in patterned structures
US6778273B2 (en) * 2001-03-30 2004-08-17 Therma-Wave, Inc. Polarimetric scatterometer for critical dimension measurements of periodic structures
US6529282B1 (en) * 2001-06-11 2003-03-04 Advanced Micro Devices, Inc. Method of controlling photolithography processes based upon scatterometric measurements of photoresist thickness, and system for accomplishing same
US6451621B1 (en) * 2002-01-16 2002-09-17 Advanced Micro Devices, Inc. Using scatterometry to measure resist thickness and control implant
US6847443B1 (en) * 2002-01-17 2005-01-25 Rudolph Technologies, Inc. System and method for multi-wavelength, narrow-bandwidth detection of surface defects
US6882413B2 (en) * 2002-02-04 2005-04-19 Therma-Wave, Inc. Rotating head ellipsometer
US7364839B2 (en) 2002-07-24 2008-04-29 Kabushiki Kaisha Toshiba Method for forming a pattern and substrate-processing apparatus
US6859746B1 (en) 2003-05-01 2005-02-22 Advanced Micro Devices, Inc. Methods of using adaptive sampling techniques based upon categorization of process variations, and system for performing same
US6836691B1 (en) 2003-05-01 2004-12-28 Advanced Micro Devices, Inc. Method and apparatus for filtering metrology data based on collection purpose
JP4127664B2 (ja) * 2003-06-30 2008-07-30 株式会社東芝 現像処理装置の調整方法
DE60333688D1 (de) 2003-12-19 2010-09-16 Ibm Differentielle metrologie für kritische abmessung und überlagerung
JP4282500B2 (ja) * 2004-01-29 2009-06-24 株式会社東芝 構造検査方法及び半導体装置の製造方法
US8049213B2 (en) * 2007-12-18 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Feature dimension measurement
KR101511158B1 (ko) * 2008-12-16 2015-04-13 삼성전자주식회사 레티클 에러 검출 방법
RU2384838C1 (ru) * 2008-12-23 2010-03-20 Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН СПОСОБ ТЕСТИРОВАНИЯ ЧИПОВ КАСКАДНЫХ ФОТОПРЕОБРАЗОВАТЕЛЕЙ НА ОСНОВЕ СОЕДИНЕНИЙ Al-Ga-In-As-P И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ
JP6339333B2 (ja) * 2013-08-27 2018-06-06 芝浦メカトロニクス株式会社 ドライエッチング装置およびエッチング量測定方法
EP3435161A1 (en) * 2017-07-24 2019-01-30 ASML Netherlands B.V. Determining an edge roughness parameter of a periodic structure
CN107728437A (zh) * 2017-11-17 2018-02-23 深圳市龙图光电有限公司 掩膜板的显影图形精度控制方法及其显影装置
CN112895617B (zh) * 2021-03-25 2025-08-15 江苏博思信息科技有限公司 一种防水型聚氨酯复合膜及其制备方法
CN116682752A (zh) * 2023-01-12 2023-09-01 顺芯科技有限公司 一种具有尺寸识别功能的新型晶圆自动贴膜机

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US4142107A (en) * 1977-06-30 1979-02-27 International Business Machines Corporation Resist development control system
US4303341A (en) * 1977-12-19 1981-12-01 Rca Corporation Optically testing the lateral dimensions of a pattern
US4408884A (en) * 1981-06-29 1983-10-11 Rca Corporation Optical measurements of fine line parameters in integrated circuit processes
US4815854A (en) * 1987-01-19 1989-03-28 Nec Corporation Method of alignment between mask and semiconductor wafer
US4953982A (en) * 1988-07-20 1990-09-04 Applied Materials, Inc. Method and apparatus for endpoint detection in a semiconductor wafer etching system
US5076692A (en) * 1990-05-31 1991-12-31 Tencor Instruments Particle detection on a patterned or bare wafer surface
US5164790A (en) * 1991-02-27 1992-11-17 Mcneil John R Simple CD measurement of periodic structures on photomasks
US5361137A (en) * 1992-08-31 1994-11-01 Texas Instruments Incorporated Process control for submicron linewidth measurement
US5422723A (en) * 1992-09-21 1995-06-06 Texas Instruments Incorporated Diffraction gratings for submicron linewidth measurement
US5777729A (en) * 1996-05-07 1998-07-07 Nikon Corporation Wafer inspection method and apparatus using diffracted light

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