JPH10320984A5 - - Google Patents

Info

Publication number
JPH10320984A5
JPH10320984A5 JP1997126112A JP12611297A JPH10320984A5 JP H10320984 A5 JPH10320984 A5 JP H10320984A5 JP 1997126112 A JP1997126112 A JP 1997126112A JP 12611297 A JP12611297 A JP 12611297A JP H10320984 A5 JPH10320984 A5 JP H10320984A5
Authority
JP
Japan
Prior art keywords
memory
data
area
stored
erasures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997126112A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10320984A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP12611297A priority Critical patent/JPH10320984A/ja
Priority claimed from JP12611297A external-priority patent/JPH10320984A/ja
Publication of JPH10320984A publication Critical patent/JPH10320984A/ja
Publication of JPH10320984A5 publication Critical patent/JPH10320984A5/ja
Pending legal-status Critical Current

Links

JP12611297A 1997-05-15 1997-05-15 記憶装置 Pending JPH10320984A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12611297A JPH10320984A (ja) 1997-05-15 1997-05-15 記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12611297A JPH10320984A (ja) 1997-05-15 1997-05-15 記憶装置

Publications (2)

Publication Number Publication Date
JPH10320984A JPH10320984A (ja) 1998-12-04
JPH10320984A5 true JPH10320984A5 (fr) 2005-04-07

Family

ID=14926936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12611297A Pending JPH10320984A (ja) 1997-05-15 1997-05-15 記憶装置

Country Status (1)

Country Link
JP (1) JPH10320984A (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3389186B2 (ja) 1999-04-27 2003-03-24 松下電器産業株式会社 半導体メモリカード及び読み出し装置
US7617352B2 (en) * 2000-12-27 2009-11-10 Tdk Corporation Memory controller, flash memory system having memory controller and method for controlling flash memory device
JP4654531B2 (ja) * 2001-04-20 2011-03-23 パナソニック電工株式会社 ブロック消去型記憶媒体の管理装置
JP4745528B2 (ja) * 2001-05-17 2011-08-10 富士通セミコンダクター株式会社 レジスタの設定方法及び半導体装置
JP4280055B2 (ja) * 2001-11-28 2009-06-17 株式会社Access メモリ制御方法および装置
EP1372068A3 (fr) 2002-06-11 2006-02-08 Seiko Epson Corporation Système, méthode et programme pour réinscrire une mémoire flash
US6944063B2 (en) * 2003-01-28 2005-09-13 Sandisk Corporation Non-volatile semiconductor memory with large erase blocks storing cycle counts
JP4675082B2 (ja) * 2004-10-21 2011-04-20 富士通セミコンダクター株式会社 半導体記憶装置および半導体記憶装置の制御方法
JP5273780B2 (ja) * 2008-06-09 2013-08-28 株式会社ソニー・コンピュータエンタテインメント メモリアクセス制御方法及びメモリ制御装置、コンピュータプログラム
KR101464255B1 (ko) * 2008-06-23 2014-11-25 삼성전자주식회사 플래시 메모리 장치 및 그것을 포함한 시스템
JP5255389B2 (ja) * 2008-09-29 2013-08-07 株式会社日立製作所 記憶装置およびメモリ制御方法
JP5192352B2 (ja) * 2008-10-30 2013-05-08 株式会社日立製作所 記憶装置及びデータ格納領域管理方法
JP5174687B2 (ja) * 2009-01-07 2013-04-03 日本オクラロ株式会社 光伝送モジュール及び状態情報保存方法
JP5486193B2 (ja) * 2009-01-27 2014-05-07 株式会社東海理化電機製作所 フラッシュメモリの動作保護装置及びフラッシュメモリの動作保護方法
KR101028901B1 (ko) * 2009-02-05 2011-04-12 (주)인디링스 메모리 장치, 메모리 관리 장치 및 메모리 관리 방법
CN102222044B (zh) * 2010-04-16 2015-09-02 慧荣科技股份有限公司 存储器的数据写入方法及数据储存装置
JP6107802B2 (ja) * 2014-12-15 2017-04-05 コニカミノルタ株式会社 不揮発性メモリ制御装置、不揮発性メモリ制御方法及びプログラム
CN117275561B (zh) * 2023-09-19 2024-06-21 四川云海芯科微电子科技有限公司 一种固态硬盘磨损均衡力度调节方法及系统

Similar Documents

Publication Publication Date Title
JPH10320984A5 (fr)
US7797481B2 (en) Method and apparatus for flash memory wear-leveling using logical groups
US6865122B2 (en) Reclaiming blocks in a block-alterable memory
US8335886B2 (en) Wear leveling method for non-volatile memory device having single and multi level memory cell blocks
KR100858241B1 (ko) 하이브리드 플래시 메모리 장치 및 그것의 가용 블록 할당방법
KR101383853B1 (ko) 빠른 웨어 레벨링 플래쉬 드라이브
TWI406295B (zh) 快閃記憶體系統中內務作業之排程
KR100926195B1 (ko) 불휘발성 반도체 기억 장치
US20100125696A1 (en) Memory Controller For Controlling The Wear In A Non-volatile Memory Device And A Method Of Operation Therefor
KR100914089B1 (ko) 비휘발성 저장 시스템의 소거 카운트 유지 방법 및 장치
KR100910680B1 (ko) 소거 카운트 블록을 유지하는 방법 및 장치
US11461228B2 (en) Multilevel addressing
TWI393140B (zh) 在一非揮發性記憶體中儲存資料之方法
US6401160B1 (en) Method and apparatus to permit adjustable code/data boundary in a nonvolatile memory
US7818492B2 (en) Source and shadow wear-leveling method and apparatus
US20010054129A1 (en) Method, system and computer program
US20090157947A1 (en) Memory Apparatus and Method of Evenly Using the Blocks of a Flash Memory
US20080037321A1 (en) Partial-Write-Collector Algorithm for Multi Level Cell (MLC) Flash
US9189390B2 (en) Wear leveling for erasable memories
EP1619585A2 (fr) Allocation dynamique pour la gestion efficace de données de taille variable dans une mémoire non volatile
KR20100010355A (ko) 플래시 메모리 장치 및 그것의 프로그램 및 소거 방법
US20150039805A1 (en) System and Method to Emulate an Electrically Erasable Programmable Read-Only Memory
US8954646B2 (en) Method for managing a plurality of blocks of a flash memory, and associated memory device and controller thereof
US20090249140A1 (en) Method for managing defect blocks in non-volatile memory
KR100764052B1 (ko) 유동적 어드레스 바운더리를 갖는 플래시 메모리 장치 및그것의 프로그램 방법