JPH1032323A - Solid-state imaging device and camera using it - Google Patents
Solid-state imaging device and camera using itInfo
- Publication number
- JPH1032323A JPH1032323A JP8218860A JP21886096A JPH1032323A JP H1032323 A JPH1032323 A JP H1032323A JP 8218860 A JP8218860 A JP 8218860A JP 21886096 A JP21886096 A JP 21886096A JP H1032323 A JPH1032323 A JP H1032323A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- imaging device
- state imaging
- substrate
- bare
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、固体撮像装置とそ
れを用いたカメラに関する。The present invention relates to a solid-state imaging device and a camera using the same.
【0002】[0002]
【従来の技術】固体撮像装置は、高い電気的特性と共に
光学的特性を要求され、従って、その中核を成す固体撮
像素子は機械的精度の高い特殊なパッケージに納める必
要があるが、それと共に非常に多くの周辺回路を必要と
するので、従来においては、周辺回路を成すICチップ
その他の電子部品は固体撮像素子収納パッケージとは全
く別個のプリント基板に搭載していた。図13は撮像装
置の概略構成を示すブロック構成図であり、図におい
て、CCDはCCD型固体撮像素子、S/Hはサンプル
ホールド回路、A/DはA/Dコンバータ、DSPはカ
ラー信号処理部、V.DRVはVドライブ、TGはタイ
ミングゼネレータ、RAMはカラー信号処理部に接続さ
れたランダムアクセスメモリ、CONTは同じくカラー
信号処理部に接続されたマイクロコンピュータである。2. Description of the Related Art A solid-state imaging device is required to have not only high electrical characteristics but also optical characteristics. Therefore, a solid-state imaging device which forms the core of the solid-state imaging device needs to be housed in a special package with high mechanical accuracy. Conventionally, an IC chip and other electronic components constituting the peripheral circuit have been mounted on a printed circuit board completely separate from the package containing the solid-state imaging device. FIG. 13 is a block diagram showing a schematic configuration of the image pickup apparatus. In the figure, CCD is a CCD solid-state image pickup device, S / H is a sample hold circuit, A / D is an A / D converter, and DSP is a color signal processing unit. , V. DRV is a V drive, TG is a timing generator, RAM is a random access memory connected to a color signal processing unit, and CONT is a microcomputer also connected to the color signal processing unit.
【0003】ここで、周辺回路として絶対に必要な回路
を正確に述べると、ディジタルタイプの場合、1.サン
プルホールド回路、2.タイミング発生回路、3.CC
D型固体撮像素子クロックドライバ(所謂V−DRIV
ER等)、4.AGC(AutoGain Control )回路、
5.クロック発生回路(水晶発振子等)、6.A/Dコ
ンバータ、7.ディジタルカメラプロセス回路、8.D
/Aコンバータ、9.コンポージットTVエンコーダ、
10.IEEE1394,FDDI,FiberCha
nnel等のディジタル通信ペリフェラル回路、11.
DC−DCコンバータである。Here, the circuits absolutely necessary as peripheral circuits are described accurately. Sample and hold circuit, 2. 2. timing generation circuit; CC
D-type solid-state imaging device clock driver (so-called V-DRIV
ER etc.); AGC (AutoGain Control) circuit,
5. 5. clock generation circuit (crystal oscillator, etc.); A / D converter, 7. 7. Digital camera process circuit, D
8. A / A converter; Composite TV encoder,
10. IEEE 1394, FDDI, FiberCha
10. Digital communication peripheral circuits such as nnel,
It is a DC-DC converter.
【0004】また、アナログタイプの場合、上記ディジ
タルタイプの1.サンプルホールド回路、2.タイミン
グ発生回路、3.CCD型固体撮像素子クロックドライ
バ(所謂V−DRIVER等)、4.AGC(Auto Gai
n Control )回路、5.クロック発生回路(水晶発振子
等)、9.コンポージットTVエンコーダ、11.DC
−DCコンバータと、12.カメラプロセス回路であ
る。[0004] In the case of the analog type, the digital type 1. Sample and hold circuit, 2. 2. timing generation circuit; 3. CCD type solid-state imaging device clock driver (so-called V-DRIVER or the like); AGC (Auto Gai
n Control) circuit; 8. Clock generation circuit (crystal oscillator, etc.); 10. Composite TV encoder, DC
11. a DC converter; This is a camera process circuit.
【0005】図14は固体撮像装置の従来例の一つを示
す構成図である。図14において、aはCCD型固体撮
像素子、bはレンズ部、cは固体撮像素子搭載基板、d
はフレキシブル基板で、固体撮像素子搭載基板cと、例
えばガラスエポキシ樹脂からなるIC搭載基板eとの間
を接続する。fは該IC搭載基板eに搭載されたIC、
gは該IC搭載基板eのピンジャックである。FIG. 14 is a configuration diagram showing one conventional example of a solid-state imaging device. In FIG. 14, a is a CCD type solid-state imaging device, b is a lens unit, c is a solid-state imaging device mounting substrate, d
Is a flexible substrate, which connects between the solid-state imaging element mounting board c and an IC mounting board e made of, for example, glass epoxy resin. f is an IC mounted on the IC mounting board e;
g is a pin jack of the IC mounting board e.
【0006】[0006]
【発明が解決しようとする課題】ところで、図14に示
す従来の固体撮像装置によれば、小型化の要請に応える
ことに限界があった。というのは、固体撮像装置、そし
てそれを用いたカメラは用途が多岐に渡り、例えば放送
局用等の業務用カメラ等には小型化の要請はさほど強く
ないが、家庭用カメラ等には小型化の要請が極めて強
い。また、用途の拡大に伴って重要なのは小型化の外に
低価格化の要求である。According to the conventional solid-state imaging device shown in FIG. 14, there is a limit in meeting the demand for miniaturization. This is because solid-state imaging devices and cameras using the same have a wide variety of uses.For example, there is no strong demand for miniaturization for professional cameras for broadcasting stations, etc. The demand for conversion is extremely strong. What is important along with the expansion of applications is a demand for price reduction in addition to miniaturization.
【0007】しかるに、図14に示すような固体撮像装
置の場合、固体撮像素子搭載基板cと、IC搭載基板e
と、その両者を繋ぐフレキシブル基板dを必要とし、各
々がそれぞれ独自に無視できない面積を占有するので、
小型化が難しい。そして、基板として多種類のものを使
用し、その間の接続作業には工数がかかるので、製造コ
ストが高く、低価格化が制約される。However, in the case of a solid-state imaging device as shown in FIG. 14, a solid-state imaging device mounting substrate c and an IC mounting substrate e
And a flexible board d that connects the two, and each occupies an area that cannot be ignored independently.
It is difficult to miniaturize. And since many kinds of substrates are used, and the connection work between them requires a lot of man-hours, the manufacturing cost is high and the reduction in price is restricted.
【0008】本発明はこのような問題点を解決すべく為
されたものであり、固体撮像装置及びそれを用いたカメ
ラの小型化及び低価格化を図ることを目的とする。The present invention has been made to solve such problems, and has as its object to reduce the size and cost of a solid-state imaging device and a camera using the same.
【0009】[0009]
【課題を解決するための手段】請求項1の固体撮像装置
は、固体撮像素子と、該固体撮像素子の裏面乃至裏面側
に形成し、上記固体撮像素子の周辺回路を成す1又は複
数のベアのICと、を少なくとも備え、該ベアのICを
樹脂で封止したことを特徴とする。According to a first aspect of the present invention, there is provided a solid-state imaging device comprising: a solid-state imaging device; and one or more bare members formed on a back surface or a back surface of the solid-state imaging device and forming a peripheral circuit of the solid-state imaging device. Wherein the bare IC is sealed with a resin.
【0010】従って、請求項1の固体撮像装置によれ
ば、固体撮像素子と周辺回路を成すベアのICとを別の
基板に搭載する必要がなく、しかも、図14に示す従来
の固体撮像装置において必要であった固体撮像素子用基
板とベアのIC用基板との間を繋ぐフレキシブル基板な
るものも必要でない。従って、固体撮像装置の小型化を
図ることができる。Therefore, according to the solid-state imaging device of the first aspect, it is not necessary to mount the solid-state imaging device and the bare IC constituting the peripheral circuit on a separate board, and the conventional solid-state imaging device shown in FIG. There is no need for a flexible substrate that connects the solid-state imaging device substrate and the bare IC substrate that were required in the above. Therefore, the size of the solid-state imaging device can be reduced.
【0011】しかも、基板として多種類のものを使用す
る必要がない上、基板間を接続する基板も必要でないの
で、使用部品数を低減し、その費用を軽減し、組立工数
を低減することができる。従って、固体撮像装置の価格
の低減を図ることができる。また、信号線が従来よりも
短かくできるので、ノイズの発生、侵入が生じにくくな
り、電気的特性も向上する。In addition, since it is not necessary to use various types of substrates, and it is not necessary to use a substrate for connecting the substrates, it is possible to reduce the number of parts used, the cost, and the number of assembly steps. it can. Therefore, the cost of the solid-state imaging device can be reduced. Further, since the signal line can be made shorter than before, noise is less likely to be generated and penetrated, and electrical characteristics are improved.
【0012】請求項2の固体撮像装置は、多層配線構造
のパッケージと、該パッケージの外底面側に設けられた
固体撮像素子と、上記パッケージの内底面側に設けら
れ、上記固体撮像素子とはパッケージの多層配線を介し
て接続されたところの周辺回路を成す1又は複数のベア
のICと、を備えたことを特徴とする。According to a second aspect of the present invention, there is provided a solid-state imaging device including a package having a multilayer wiring structure, a solid-state imaging device provided on an outer bottom surface of the package, and a solid-state imaging device provided on an inner bottom surface of the package. And one or more bare ICs forming a peripheral circuit connected via the multilayer wiring of the package.
【0013】従って、請求項2の固体撮像装置によれ
ば、多層配線構造のパッケージの一方の側に固体撮像素
子を他方の側に周辺回路を成すICを設け、固体撮像素
子・IC間に必要な電気的接続をパッケージの配線によ
り為すことができるので、より高い集積密度を以て固体
撮像素子、周辺回路を成すIC等を実装することができ
る。Therefore, according to the solid-state image pickup device of the second aspect, the solid-state image pickup device is provided on one side of the package having the multilayer wiring structure, and the IC constituting the peripheral circuit is provided on the other side, and the solid-state image pickup device is required between the solid-state image pickup device and the IC. Since such an electrical connection can be made by wiring of the package, a solid-state imaging device, an IC forming a peripheral circuit, and the like can be mounted with a higher integration density.
【0014】本発明カメラは、上記本発明固体撮像装置
を用いてなることを特徴とするものである。従って、本
発明カメラによれば、カメラの中核を成す撮像手段とし
て上記本発明固体撮像装置を用いるので、必然的に小型
化、低価格化を図ることができる。A camera according to the present invention is characterized by using the solid-state imaging device according to the present invention. Therefore, according to the camera of the present invention, since the solid-state imaging device of the present invention is used as the imaging means that forms the core of the camera, it is possible to inevitably reduce the size and cost.
【0015】また、信号線が従来よりも短かくできるの
で、ノイズの発生、侵入が生じにくくなり、電気的特性
も向上する。In addition, since the signal line can be made shorter than before, noise is less likely to occur and penetrate, and the electrical characteristics are improved.
【0016】[0016]
【発明の実施の形態】以下、本発明を図示実施の形態に
従って詳細に説明する。図1は本発明の第1の実施の形
態を示すものである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments. FIG. 1 shows a first embodiment of the present invention.
【0017】図面において、1は基板で、例えばセラミ
ック配線基板からなり、2は該基板1の裏面の周縁部に
一体に形成された周壁である。3は基板1の表面の略中
央部に搭載された例えばCCD型固体撮像素子で、その
電極と基板1表面の配線膜とはワイヤ4を介して接続さ
れている。5はディスクリート部品で、本実施の形態で
は基板1の表側の面に搭載されている。しかし、後述す
るIC(6)と同様に裏面に搭載するようにしても良
い。In the drawings, reference numeral 1 denotes a substrate, for example, a ceramic wiring substrate, and reference numeral 2 denotes a peripheral wall formed integrally with a peripheral portion of the back surface of the substrate 1. Reference numeral 3 denotes, for example, a CCD type solid-state imaging device mounted at a substantially central portion of the surface of the substrate 1, and its electrodes are connected to wiring films on the surface of the substrate 1 via wires 4. Reference numeral 5 denotes a discrete component, which is mounted on the front surface of the substrate 1 in this embodiment. However, it may be mounted on the back surface similarly to the IC (6) described later.
【0018】6は上記基板1裏面の周壁2より内側部分
に搭載されたベアのICで、1乃至複数個ある。該ベア
のIC6の各電極は基板1裏面に形成された配線膜とワ
イヤ4を介して電気的に接続されている。7は該基板1
裏面の周壁2内にポッティグにより充填された封止樹脂
で、該樹脂7により上記ベアのIC6が封止されてい
る。尚、基板1の裏面側にもディスクリート部品5を搭
載し、ベアのIC6と共に上記封止樹脂7で封止するよ
うにしても良い。Reference numeral 6 denotes one or more bare ICs mounted on the inner side of the peripheral wall 2 on the back surface of the substrate 1. Each electrode of the bare IC 6 is electrically connected via a wire 4 to a wiring film formed on the back surface of the substrate 1. 7 is the substrate 1
The bare IC 6 is sealed by the resin 7 with a sealing resin filled in the peripheral wall 2 on the back surface by potting. The discrete component 5 may be mounted on the back surface of the substrate 1 and sealed with the sealing resin 7 together with the bare IC 6.
【0019】8は基板1の表側に搭載された固体撮像素
子3、ディスクリート部品5等を外部から遮蔽する遮光
ケースで、非透明部材からなり、下周端を接着剤9を介
して基板1表面の周縁部に固定されており、10はその
頭部中央に形成された光透過用孔で、封止用透明板11
により閉塞されている。Reference numeral 8 denotes a light-shielding case for shielding the solid-state image pickup device 3, the discrete component 5 and the like mounted on the front side of the substrate 1 from the outside, which is made of a non-transparent member. 10 is a light transmission hole formed in the center of the head, and is a transparent plate 11 for sealing.
Is closed by
【0020】本固体撮像装置においては、ベアのIC6
及びディスクリート部品5等により周辺回路が構成され
ている。具体的には、ディジタルタイプの場合、1.サ
ンプルホールド回路、2.タイミング発生回路、3.C
CD型固体撮像素子クロックドライバ(所謂V−DRI
VER等)、4.AGC(Auto Gain Control )回路、
5.クロック発生回路(水晶発振子等)、6.A/Dコ
ンバータ、7.ディジタルカメラプロセス回路、8.D
/Aコンバータ、9.コンポージットTVエンコーダ、
10.IEEE1394,FDDI,Fiber Ch
annel等のディジタル通信ペリフェラル回路、1
1.DC−DCコンバータである。In this solid-state imaging device, the bare IC 6
A peripheral circuit is configured by the discrete components 5 and the like. Specifically, in the case of the digital type, Sample and hold circuit, 2. 2. timing generation circuit; C
CD-type solid-state imaging device clock driver (so-called V-DRI)
VER etc.); AGC (Auto Gain Control) circuit,
5. 5. clock generation circuit (crystal oscillator, etc.); A / D converter, 7. 7. Digital camera process circuit, D
8. A / A converter; Composite TV encoder,
10. IEEE 1394, FDDI, Fiber Ch
digital communication peripheral circuit such as
1. It is a DC-DC converter.
【0021】また、アナログタイプの場合、上記ディジ
タルタイプの1.サンプルホールド回路、2.タイミン
グ発生回路、3.CCD型固体撮像素子クロックドライ
バ(所謂V−DRIVER等)、4.AGC(Auto Gai
n Control )回路、5.クロック発生回路(水晶発振子
等)、9.コンポージットTVエンコーダ、11.DC
−DCコンバータと、12.カメラプロセス回路であ
る。In the case of the analog type, the digital type 1. Sample and hold circuit, 2. 2. timing generation circuit; 3. CCD type solid-state imaging device clock driver (so-called V-DRIVER or the like); AGC (Auto Gai
n Control) circuit; 8. Clock generation circuit (crystal oscillator, etc.); 10. Composite TV encoder, DC
11. a DC converter; This is a camera process circuit.
【0022】このような固体撮像装置によれば、セラミ
ック配線基板からなる基板1の表側に固体撮像素子3及
びその周辺回路を成すディスクリート部品5とが搭載さ
れ、該基板1の裏側に固体撮像素子3の周辺回路を成す
ベアのIC6が搭載されており、固体撮像素子3・ディ
スクリート部品5・ベアのIC6相互の電気的接続は基
板1自身に形成されている配線膜(スルーホールによる
配線膜も含む)を通じて為すことができる。従って、固
体撮像装置を構成する基板はセラミック基板1のみで済
み、固体撮像装置の占有面積を著しく狭くすることがで
き、延いては固体撮像装置の小型化を図ることができる
と共に、基板に要する部品価格も従来よりも著しく低減
する。According to such a solid-state image pickup device, the solid-state image pickup device 3 and the discrete components 5 constituting its peripheral circuits are mounted on the front side of the substrate 1 made of a ceramic wiring board, and the solid-state image pickup device is mounted on the back side of the substrate 1. 3 is mounted, and the solid-state image pickup device 3, discrete components 5, and bare IC 6 are electrically connected to each other by a wiring film (a through-hole wiring film) formed on the substrate 1 itself. Including). Therefore, the substrate constituting the solid-state imaging device is only the ceramic substrate 1, and the area occupied by the solid-state imaging device can be remarkably reduced, so that the solid-state imaging device can be downsized and the substrate is required. Part prices are also significantly lower than before.
【0023】そして、固体撮像素子3とその周辺回路を
成すディスクリート部品5とベアのIC6相互の電気的
接続には基板1自身の配線を利用できるので、従来にお
けるようなフレキシブル基板と固体撮像素子搭載用基板
との間の接続、該フレキシブル基板とIC搭載基板との
間の接続なるものが不要となり、そのため組立工数が著
しく低減し、それも固体撮像装置の低価格化の要因とな
る。The wiring of the substrate 1 itself can be used for the electrical connection between the solid-state image sensing device 3 and the discrete components 5 and the bare IC 6 constituting the peripheral circuit, so that the flexible substrate and the solid-state image sensing device mounted as in the prior art can be used. There is no need for a connection between the substrate and the flexible substrate and the IC mounting substrate, so that the number of assembling steps is significantly reduced, which also causes a reduction in the cost of the solid-state imaging device.
【0024】従って、非常に小型な固体撮像装置を安価
に提供することができる。Therefore, a very small solid-state imaging device can be provided at low cost.
【0025】また、従来よりも全体的に信号ラインを短
かくすることができるので、耐ノイズ性が高くなる。Further, since the signal line can be made shorter as a whole as compared with the related art, the noise resistance is improved.
【0026】[0026]
【発明の実施の形態】図2は本発明の第2の実施の形態
を示す断面図である。本実施の形態は、第1の実施の形
態とは、レンズ(13)を内蔵しており、ケース8が必
要な所定の絞りをかけることのできる絞り孔(14)を
有しており、その絞り孔(14)を赤外線カットフィル
タ(15)によって閉塞しており、従って、別にレン
ズ、絞り、フィルタを必要としないので、カメラである
という点で大きく異なっているが、それ以外の点では共
通し、共通する点については既に説明済みなのでその説
明を省略し、相違する点についてのみ説明する。FIG. 2 is a sectional view showing a second embodiment of the present invention. This embodiment is different from the first embodiment in that a lens (13) is built in, and the case 8 has an aperture (14) through which a required predetermined aperture can be applied. The aperture hole (14) is closed by an infrared cut filter (15), and therefore does not require a separate lens, aperture, and filter. Therefore, the aperture is largely different in that it is a camera, but is otherwise common. Since the common points have already been described, the description thereof will be omitted, and only different points will be described.
【0027】12はレンズ13と一体に形成されたレン
ズ取付部(脚部)で、その下端面を、レンズ13が被写
体を固体撮像素子3の表面に結像できるところに位置す
るような位置にて基板1表面に接着されている。該レン
ズ13は当然に透明であるが、レンズ取付具12は透明
でない方(例えば黒色)が漏光防止の点で好ましいとい
える。しかし、透明であっても良い。尚、レンズ取付具
12を透明でない材料で形成する場合のレンズ13との
一体化は、両方を別々に形成しその後両者を接着するこ
とによって行っても良いが、異なる色の樹脂材料を用い
た二色成形により行っても良い。Reference numeral 12 denotes a lens mounting portion (leg portion) formed integrally with the lens 13, and the lower end surface thereof is located at a position where the lens 13 can position a subject on the surface of the solid-state imaging device 3. To the substrate 1 surface. Although the lens 13 is naturally transparent, it is preferable that the lens mount 12 is not transparent (for example, black) from the viewpoint of preventing light leakage. However, it may be transparent. In the case where the lens mount 12 is formed of a non-transparent material, the integration with the lens 13 may be performed by forming both separately and then bonding them together, but using resin materials of different colors. It may be performed by two-color molding.
【0028】14はケース8の頭部中央に形成された絞
り孔で、カメラとして所望の特性を得るために必要と設
定された絞りをかけられる大きさに形成されている。1
5はこの絞り孔14を閉塞する赤外線カットフィルタで
ある。Reference numeral 14 denotes a stop hole formed in the center of the head of the case 8, which is formed in a size that allows a stop required to obtain desired characteristics as a camera. 1
Reference numeral 5 denotes an infrared cut filter that closes the aperture 14.
【0029】本実施の形態によれば、絞りは上記絞り孔
14によりかけることができ、絞り孔14を透過した光
による、被写体の固体撮像素子3表面への結像は上記レ
ンズ13により為すことができ、そして、CCD型固体
撮像素子3により撮像ができ、該CCD型固体撮像素子
3の出力信号は周辺回路を成す各ベアのIC6、ディス
クリート部品5により画像再生に必要な信号処理を施す
ことができるので、本実施の形態はカメラといえる。According to the present embodiment, the aperture can be set by the aperture 14, and the image formed on the surface of the solid-state image sensor 3 by the light transmitted through the aperture 14 is formed by the lens 13. The CCD solid-state imaging device 3 can take an image, and the output signal of the CCD solid-state imaging device 3 is subjected to signal processing necessary for image reproduction by the ICs 6 and the discrete components 5 of each bare constituting a peripheral circuit. This embodiment can be said to be a camera.
【0030】本カメラによれば、図1に示す固体撮像装
置として非常に小型で、安価なものに、僅かにレンズ部
材を付加し、ケース8の光を取り入れる孔を絞り孔14
とし、赤外線カットフィルタ15でその絞り孔14を閉
塞するだけで、カメラとしての充分な機能を備えるの
で、極めて小型で、安価なカメラを提供することができ
る。According to the present camera, a very small and inexpensive solid-state imaging device shown in FIG.
By simply closing the aperture hole 14 with the infrared cut filter 15, a sufficient function as a camera is provided, so that an extremely small and inexpensive camera can be provided.
【0031】[0031]
【発明の実施の形態】図3は本発明の第3の実施の形態
を示す断面図であり、図4(A)、(B)はその実施の
形態の樹脂封止前の状態を示すもので、(A)は断面
図、(B)は底面図である。FIG. 3 is a sectional view showing a third embodiment of the present invention, and FIGS. 4 (A) and 4 (B) show a state of the embodiment before resin sealing. (A) is a sectional view, and (B) is a bottom view.
【0032】図面において、3は固体撮像素子、19は
該固体撮像素子3の表面の周辺部に形成された電極、6
は該固体撮像素子3の裏面に接着剤16を介して裏面を
接着されたベアのICで、固体撮像素子3の周辺回路を
成す上述した各回路が内蔵されている。このように本実
施の形態においては、周辺回路を成すベアのIC6が固
体撮像素子3の裏面に基板を介することなく直接に接着
されている。In the drawings, reference numeral 3 denotes a solid-state imaging device; 19, an electrode formed on the periphery of the surface of the solid-state imaging device 3;
Is a bare IC whose back surface is bonded to the back surface of the solid-state imaging device 3 via an adhesive 16, and includes the above-described circuits constituting the peripheral circuits of the solid-state imaging device 3. As described above, in the present embodiment, the bare IC 6 constituting the peripheral circuit is directly bonded to the back surface of the solid-state imaging device 3 without interposing a substrate.
【0033】12はレンズ13と一体に形成されたレン
ズ取付部(取付脚)で、張り合わせ乃至二色成形により
一体化されており、レンズ13が透明部材(例えば透明
樹脂)からなるのに対して、遮光部材(例えば黒色樹
脂)からなる。18はレンズ取付部12の下面に形成さ
れたメタライズ電極膜で、それには上記固体撮像素子3
の上記電極とリード19が接続されており、この接続に
より一応固体撮像素子3及びベアのIC6と、レンズ1
3及びレンズ取付部14と、リード19との位置関係が
定まる。4はそのリード19とベアのIC6の電極との
間を電気的に接続するワイヤであり、このワイヤ4及び
リード19を介してベアのIC6の電極が外部とカメラ
外部と電気的に接続されると共に、固体撮像素子3の電
極と電気的に接続される。図4はこれまでに説明した構
造の状態を示す。Reference numeral 12 denotes a lens attachment portion (attachment leg) formed integrally with the lens 13, which is integrated by bonding or two-color molding, whereas the lens 13 is made of a transparent member (eg, transparent resin). And a light shielding member (for example, a black resin). Reference numeral 18 denotes a metallized electrode film formed on the lower surface of the lens mounting portion 12,
Are connected to the lead 19, and by this connection, the solid-state imaging device 3 and the bare IC 6 and the lens 1 are temporarily connected.
The positional relationship between the leads 3 and the lens mounting portion 14 is determined. Reference numeral 4 denotes a wire for electrically connecting the lead 19 and the electrode of the bare IC 6. The electrode of the bare IC 6 is electrically connected to the outside and the camera outside via the wire 4 and the lead 19. At the same time, it is electrically connected to the electrodes of the solid-state imaging device 3. FIG. 4 shows the state of the structure described so far.
【0034】17は周辺回路を成すベアのIC6の表面
側、リード19、ワイヤ4及びレンズ取付部12の下部
を封止する封止樹脂であり、パッケージを成す。8はケ
ースで、頭部中央に絞り孔14を有し、該絞り孔14は
赤外線カットフィルタ15で閉塞されている。該ケース
8はその下端を上記パッケージを成す封止樹脂17の上
面周縁部に接着されている。これによりカメラが完成し
た状態になる。Reference numeral 17 denotes a sealing resin which seals the surface side of the bare IC 6 forming the peripheral circuit, the leads 19, the wires 4, and the lower portion of the lens mounting portion 12, and forms a package. Reference numeral 8 denotes a case, which has an aperture 14 at the center of the head, and the aperture 14 is closed by an infrared cut filter 15. The lower end of the case 8 is bonded to the peripheral edge of the upper surface of the sealing resin 17 forming the package. Thus, the camera is in a completed state.
【0035】図5(A)乃至(C)は図3、図4に示す
カメラの製造方法を工程順に示すもので、(A)はレン
ズ取付部14、レンズ13を下向きにし、それに互いに
接着された固体撮像素子3及びベアのIC6を組み付け
ようとする状態を示す斜視図であり、(B)はワイヤボ
ンディングが済んだ状態を示し、(C)は樹脂封止のた
めの型締め時の状態を示す断面図である。FIGS. 5A to 5C show a method of manufacturing the camera shown in FIGS. 3 and 4 in the order of steps. FIG. 5A shows the lens mounting portion 14 and the lens 13 facing downward and adhered to each other. FIG. 2 is a perspective view showing a state where the solid-state imaging device 3 and a bare IC 6 are to be assembled, (B) shows a state after wire bonding is completed, and (C) shows a state at the time of mold clamping for resin sealing. FIG.
【0036】即ち、固体撮像素子3とベアのIC6を接
着したものと、レンズ取付部12の下面のメタライズ電
極膜18にリード19を予め接続しておいたものとを用
意し、図5(A)に示すように、固体撮像素子3の各電
極29が対応するメタライズ電極18の接続部と位置が
整合するようにレンズ取付部12に固体撮像素子3を臨
ませる。そして、その後、固体撮像素子3の各電極29
と、メタライズ電極18とを接続する。That is, a device in which the solid-state image pickup device 3 and the bare IC 6 are bonded and a device in which the lead 19 is previously connected to the metallized electrode film 18 on the lower surface of the lens mounting portion 12 are prepared. As shown in (), the solid-state imaging device 3 is made to face the lens mounting portion 12 such that the position of each electrode 29 of the solid-state imaging device 3 matches the position of the connection portion of the corresponding metallized electrode 18. Then, after that, each electrode 29 of the solid-state imaging device 3
And the metallized electrode 18 are connected.
【0037】上記接続が終了すると、図5(B)に示す
ように、リード19とベアのIC6の電極との間をワイ
ヤ4で接続する。即ち、ワイヤボンディングする。その
後、図5(C)に示すような型(下型20、上型21)
を用いて型成形による封止をする。その後は、ケース8
を取り付ければ、図3に示すカメラが完成する。When the above connection is completed, as shown in FIG. 5B, the lead 4 is connected between the lead 19 and the electrode of the bare IC 6 by the wire 4. That is, wire bonding is performed. Then, the molds shown in FIG. 5C (lower mold 20, upper mold 21)
Is sealed by molding. After that, case 8
Is completed, the camera shown in FIG. 3 is completed.
【0038】本実施の形態によっても、非常に小型で、
安価なカメラを提供できる。According to the present embodiment, a very small
An inexpensive camera can be provided.
【0039】[0039]
【実施例】図6は図3に示したカメラの別の実施例の要
部を示す断面図である。FIG. 6 is a sectional view showing a main part of another embodiment of the camera shown in FIG.
【0040】本実施例は、レンズ取付部12の外側面に
配線となるメタライズ電極18を形成しておくことと
し、その外側面に周辺回路を成すところの、固体撮像素
子3に接着されたベアのIC6とは別のベアのIC2
6、更には、チップ部品5をマウントし、そして、ベア
のIC26の各電極とメタライズ電極18との間をワイ
ヤ4により接続してなるものである。In this embodiment, a metallized electrode 18 serving as a wiring is formed on the outer surface of the lens mounting portion 12, and a bare circuit adhered to the solid-state imaging device 3, which forms a peripheral circuit on the outer surface. Bare IC2 different from IC6
6. Further, the chip component 5 is mounted, and each electrode of the bare IC 26 and the metallized electrode 18 are connected by the wire 4.
【0041】このようにすると、より高性能のカメラを
小型化、低価格化できる。In this way, a higher-performance camera can be reduced in size and cost.
【0042】[0042]
【発明の実施の形態】図7は本発明固体撮像装置の第4
の実施の形態を示す断面図である。本実施の形態は、基
板として多段の多層配線構造のセラミックパッケージ1
aを用い、その外底面に固体撮像素子3及びレンズ13
を搭載し、ケース8でこれら3、13を外部から遮断
し、セラミックパッケージ1aの内底面側に多数のIC
6、6、・・・及びディスクリート部品5、5、・・・
を搭載したものである。FIG. 7 shows a fourth embodiment of the solid-state imaging device according to the present invention.
It is sectional drawing which shows embodiment. In the present embodiment, a ceramic package 1 having a multi-layer wiring structure as a substrate is used.
a, the solid-state imaging device 3 and the lens 13
The case 3 is shut off from the outside by the case 8, and a large number of ICs are mounted on the inner bottom surface side of the ceramic package 1a.
... and discrete parts 5, 5, ...
It is equipped with.
【0043】30は多段多層配線構造のセラミックパッ
ケージ1aの段部で、該段部30には平板状の多層配線
基板31が周縁部にて接着され、その両面にはIC6、
6、・・・とチップ部品5、5が搭載され、そして平板
状の多層配線基板31とセラミックパッケージ1aとの
間の電気的接続はコネクトワイヤ4、4、・・・を介し
て為されている。32はセラミックパッケージ1aの内
底面で、該内底面32にもIC6、6が搭載されてい
る。33はセラミックパッケージ1aの周壁2に周縁部
を接着されて封止をする裏蓋である。39は配線膜、4
0はスルーホールである。Numeral 30 denotes a step portion of the ceramic package 1a having a multi-stage multilayer wiring structure. A flat multilayer wiring substrate 31 is adhered to the step portion 30 at the peripheral portion, and IC6 and IC6 are provided on both surfaces thereof.
, And the chip components 5, 5 are mounted, and the electrical connection between the flat-plate multilayer wiring board 31 and the ceramic package 1a is made via the connect wires 4, 4,. I have. Reference numeral 32 denotes an inner bottom surface of the ceramic package 1a, and ICs 6 and 6 are also mounted on the inner bottom surface 32. Reference numeral 33 denotes a back cover for sealing the peripheral portion of the peripheral wall 2 of the ceramic package 1a by bonding the peripheral portion. 39 is a wiring film, 4
0 is a through hole.
【0044】このような固体撮像装置によれば、多段で
多層配線構造のパッケージ1aの外底面に固体撮像素子
3やレンズ13を、内底面に周辺回路を成すIC5、
5、・・・を設け、更にパッケージ1aの段部30にも
平板状の多層配線基板31を固定し、該基板31の両面
にIC6、6、・・・やディスクリート部品5、5・・
・を設け、固体撮像素子・IC間に必要な電気的接続を
パッケージ1a、31の配線により為すことができるの
で、より高い集積密度を以て固体撮像素子、周辺回路を
成すIC等を実装することができる。According to such a solid-state image pickup device, the solid-state image pickup device 3 and the lens 13 are provided on the outer bottom surface of the package 1a having a multi-stage, multi-layer wiring structure, and the IC 5 forming a peripheral circuit is provided on the inner bottom surface.
, And a flat multi-layer wiring board 31 is also fixed to the step 30 of the package 1a, and ICs 6, 6,... And discrete components 5, 5,.
, The necessary electrical connection between the solid-state imaging device and the IC can be made by wiring of the packages 1a and 31. Therefore, it is possible to mount the solid-state imaging device and the IC forming the peripheral circuit with a higher integration density. it can.
【0045】[0045]
【実施例】図8は図7に示した第4の実施の形態の第1
のバリエーションである実施例を示す断面図である。本
実施例はレンズ13と一体に形成されたレンズ取付部
(脚部)12として、内面に位置決め傾斜面34を有す
るものを用い、固体撮像素子3の上面のエッジに傾斜面
34を接しさせることによりレンズ13の固体撮像素子
3に対する位置関係が自ずとセルフアライメントにより
規定されるようにしたものであり、位置決め作業が簡単
且つ正確に行うことができる。FIG. 8 shows a first embodiment of the fourth embodiment shown in FIG.
It is sectional drawing which shows the Example which is a variation of FIG. In the present embodiment, a lens mounting portion (leg portion) 12 integrally formed with the lens 13 has a positioning inclined surface 34 on the inner surface, and the inclined surface 34 is brought into contact with the edge of the upper surface of the solid-state imaging device 3. Thus, the positional relationship of the lens 13 with respect to the solid-state imaging device 3 is naturally determined by self-alignment, and the positioning operation can be performed easily and accurately.
【0046】具体的には、レンズ取付部12の下面を半
硬化性樹脂(例えば紫外線硬化型樹脂)9aで基板1a
表面に仮接着した状態でレンズ取付部12の位置決め傾
斜面13と、固体撮像素子13の上面のエッジとを線接
触させることにより位置調整を行い、その後、紫外線照
射によりその樹脂9aを完全に硬化させることにより接
着した状態にする。それ以外の点では図7に示すものと
は共通している。More specifically, the lower surface of the lens mounting portion 12 is made of a semi-curable resin (for example, an ultraviolet-curable resin) 9a.
Position adjustment is performed by bringing the positioning inclined surface 13 of the lens mounting portion 12 into line contact with the edge of the upper surface of the solid-state imaging device 13 in a state where the resin 9a is temporarily bonded to the surface, and then the resin 9a is completely cured by ultraviolet irradiation. By doing so, it is in a bonded state. The other points are the same as those shown in FIG.
【0047】[0047]
【実施例】図9は図7に示した第4の実施の形態の第2
のバリエーションである実施例を示す断面図である。本
実施例は固体撮像素子3をガラスでカバーし、レンズを
その外側に設けたものである。同図において、35はガ
ラス支持用矩形枠で、固体撮像素子3を囲繞するように
設けられ、その内面上部の段部にガラス板36が固着さ
れており、レンズ13はそのガラス板36及び矩形枠3
5の外側であってケース8の内側に設けられている。そ
れ以外の点では図7に示すものとは共通している。FIG. 9 shows a second embodiment of the fourth embodiment shown in FIG.
It is sectional drawing which shows the Example which is a variation of FIG. In this embodiment, the solid-state imaging device 3 is covered with glass, and a lens is provided outside the glass. In the figure, reference numeral 35 denotes a rectangular frame for supporting glass, which is provided so as to surround the solid-state imaging device 3, and a glass plate 36 is fixed to a step portion on the inner surface of the solid-state imaging device 3, and the lens 13 has the glass plate 36 and the rectangular shape. Frame 3
5 and inside the case 8. The other points are the same as those shown in FIG.
【0048】[0048]
【実施例】図10は図7に示した第4の実施の形態の第
3のバリエーションである実施例を示す断面図である。
本実施例は、基板1aの外底面に固体撮像素子搭載用凹
部37を形成し、該凹部37内に固体撮像素子3を設
け、該凹部37をガラス板36によりカバーすることと
し、更に、その外側にレンズ取付用凹部38を形成し、
該凹部38にレンズ13の取付部(脚)12を固定した
ものである。それ以外の点では図7に示すものとは共通
している。FIG. 10 is a sectional view showing an example which is a third variation of the fourth embodiment shown in FIG.
In this embodiment, a recess 37 for mounting a solid-state imaging device is formed on the outer bottom surface of the substrate 1a, the solid-state imaging device 3 is provided in the recess 37, and the recess 37 is covered with a glass plate 36. Forming a lens mounting recess 38 on the outside,
The mounting portion (leg) 12 of the lens 13 is fixed to the concave portion 38. The other points are the same as those shown in FIG.
【0049】[0049]
【実施例】図11は図7に示した第4の実施の形態の第
4のバリエーションである実施例を示す断面図である。
本実施例は、配線基板31と多段多層配線構造の配線基
板1a(の段部31)との接続をワイヤによってではな
く、バンプ41により行い、そして、配線基板31の下
側表面を樹脂7により保護したものである。それ以外の
点では図7に示したものとは共通している。FIG. 11 is a sectional view showing an example which is a fourth variation of the fourth embodiment shown in FIG.
In this embodiment, the connection between the wiring board 31 and the wiring board 1a (the step portion 31) of the multi-stage multilayer wiring structure is made not by wires but by bumps 41, and the lower surface of the wiring board 31 is made of resin 7 by resin. Protected. The other points are the same as those shown in FIG.
【0050】[0050]
【実施例】図12は図7に示した第5の実施の形態の第
4のバリエーションである実施例を示す断面図である。
本実施例は、領域Bを領域A及び領域Cから静電シール
ドできるようにしたもので、42は多段多層配線構造の
基板1aに領域A、Bをカバーできるように広く形成さ
れたシールド用配線膜、43は該配線膜42と接続され
たシールド用スルーホール、44はコネクトワイヤ、4
5は平板状の多層配線基板31内に形成されたシールド
用配線膜であり、配線膜42、スルーホール43、コネ
クトワイヤ44、シールド用配線膜45、コネクトワイ
ヤ44、スルーホール43及びシールド用配線膜42に
より領域Bが領域A及び領域Cから静電シールドされる
ようになっている。FIG. 12 is a sectional view showing an example which is a fourth variation of the fifth embodiment shown in FIG.
In the present embodiment, the region B can be electrostatically shielded from the region A and the region C. Reference numeral 42 denotes a shield wiring which is formed widely on the substrate 1a having a multi-layer wiring structure so as to cover the regions A and B. 43, a through hole for shielding connected to the wiring film 42; 44, a connect wire;
Reference numeral 5 denotes a shielding wiring film formed in the flat multi-layer wiring substrate 31, and includes a wiring film 42, a through hole 43, a connecting wire 44, a shielding wiring film 45, a connecting wire 44, a through hole 43, and a shielding wiring. The region B is electrostatically shielded from the regions A and C by the film 42.
【0051】従って、領域Bで発生したノイズが領域
A、Cに侵入したり、領域A、Cで発生したノイズが領
域Bに侵入するのを防止することができる。Therefore, it is possible to prevent the noise generated in the area B from entering the areas A and C, and the noise generated in the areas A and C from entering the area B.
【0052】この場合、例えば領域Bにディジタル回路
部分を設け、領域A、Cにアナログ回路部分を設けるこ
とによってアナログ回路部分とディジタル回路部分とを
電気的に分離することが可能になる。勿論、領域A、
B、Cの役割分担は、ICの構成数や信号の流れなどに
より種々の態様が有り得るものであり、上述したものに
限定されるものではない。In this case, for example, by providing a digital circuit portion in the region B and providing analog circuit portions in the regions A and C, the analog circuit portion and the digital circuit portion can be electrically separated. Of course, area A,
The roles of B and C can be in various modes depending on the number of IC components, signal flows, and the like, and are not limited to those described above.
【0053】[0053]
【発明の効果】請求項1の固体撮像装置によれば、固体
撮像素子と周辺回路を成すベアのICとを別の基板に搭
載する必要がなく、しかも、図14に示す従来の固体撮
像装置において必要であった固体撮像素子用基板とベア
のIC用基板との間を繋ぐフレキシブル基板なるものも
必要でない。従って、固体撮像装置の小型化を図ること
ができる。According to the solid-state imaging device of the first aspect, it is not necessary to mount the solid-state imaging device and the bare IC constituting the peripheral circuit on separate substrates, and the conventional solid-state imaging device shown in FIG. There is no need for a flexible substrate that connects the solid-state imaging device substrate and the bare IC substrate that were required in the above. Therefore, the size of the solid-state imaging device can be reduced.
【0054】しかも、基板として多種類のものを使用す
る必要がない上、基板間を接続する基板も必要でないの
で、使用部品数を低減し、その費用を軽減し、組立工数
を低減することができる。従って、固体撮像装置の価格
の低減を図ることができる。また、信号線が従来よりも
短かくできるので、ノイズの発生、侵入が生じにくくな
り、電気的特性も向上する。Moreover, since it is not necessary to use various types of substrates, and it is not necessary to use a substrate for connecting the substrates, it is possible to reduce the number of parts used, the cost thereof, and the number of assembly steps. it can. Therefore, the cost of the solid-state imaging device can be reduced. Further, since the signal line can be made shorter than before, noise is less likely to be generated and penetrated, and electrical characteristics are improved.
【0055】請求項2の固体撮像装置によれば、多層配
線構造のパッケージの一方の側に固体撮像素子を他方の
側に周辺回路を成すICを設け、固体撮像素子・IC間
に必要な電気的接続をパッケージの配線により為すこと
ができるので、より高集積密度を以て固体撮像素子、周
辺回路を成すIC等を実装することができる。According to the solid-state image pickup device of the second aspect, the solid-state image pickup device is provided on one side of the package having the multilayer wiring structure, and the IC constituting the peripheral circuit is provided on the other side, and the electric power required between the solid-state image pickup device and the IC is provided. Since the electrical connection can be made by the wiring of the package, a solid-state imaging device, an IC forming a peripheral circuit, and the like can be mounted with a higher integration density.
【0056】ル基板なるものも必要でない。従って、固
体撮像装置の小型化を図ることができる。No substrate is required. Therefore, the size of the solid-state imaging device can be reduced.
【0057】また、本発明カメラによれば、カメラの中
核を成す撮像手段として上記本発明固体撮像装置を用い
るので、必然的に小型化、低価格化を図ることができ
る。Further, according to the camera of the present invention, since the solid-state image pickup device of the present invention is used as the imaging means which forms the core of the camera, the size and the price can be inevitably reduced.
【図1】本発明の第1の実施の形態を示す断面図であ
る。FIG. 1 is a cross-sectional view showing a first embodiment of the present invention.
【図2】本発明の第2の実施の形態を示す断面図であ
る。FIG. 2 is a sectional view showing a second embodiment of the present invention.
【図3】本発明の第3の実施の形態を示す断面図であ
る。FIG. 3 is a sectional view showing a third embodiment of the present invention.
【図4】(A)、(B)は第3の実施の形態の樹脂封止
前の状態を示すもので、(A)は断面図で、(B)は底
面図である。FIGS. 4A and 4B show a state before resin sealing according to the third embodiment, wherein FIG. 4A is a cross-sectional view and FIG. 4B is a bottom view.
【図5】(A)乃至(C)は第3の実施の形態の製造方
法を工程順に示すもので、(A)、(B)は斜視図、
(C)は断面図である。FIGS. 5A to 5C show a manufacturing method according to a third embodiment in the order of steps, and FIGS. 5A and 5B are perspective views;
(C) is a sectional view.
【図6】第3の実施の形態の一つのバリエーションであ
る実施例を示す断面図である。FIG. 6 is a sectional view showing an example which is a variation of the third embodiment.
【図7】本発明の第4の実施の形態を示す断面図であ
る。FIG. 7 is a sectional view showing a fourth embodiment of the present invention.
【図8】図7に示した第4の実施の形態の第1のバリエ
ーションである実施例を示す断面図である。FIG. 8 is a sectional view showing an example which is a first variation of the fourth embodiment shown in FIG. 7;
【図9】図7に示した第4の実施の形態の第2のバリエ
ーションである実施例を示す断面図である。FIG. 9 is a sectional view showing an example which is a second variation of the fourth embodiment shown in FIG. 7;
【図10】図7に示した第4の実施の形態の第3のバリ
エーションである実施例を示す断面図である。FIG. 10 is a sectional view showing an example which is a third variation of the fourth embodiment shown in FIG. 7;
【図11】図7に示した第4の実施の形態の第4のバリ
エーションである実施例を示す断面図である。FIG. 11 is a sectional view showing an example that is a fourth variation of the fourth embodiment shown in FIG. 7;
【図12】図7に示した第4の実施の形態の第5のバリ
エーションである実施例を示す断面図である。FIG. 12 is a sectional view showing an example that is a fifth variation of the fourth embodiment shown in FIG. 7;
【図13】撮像装置の概略構成を示すブロック構成図で
ある。FIG. 13 is a block diagram illustrating a schematic configuration of an imaging apparatus.
【図14】従来例を示す構成図である。FIG. 14 is a configuration diagram showing a conventional example.
1、1a・・・基板、3・・・固体撮像素子、6・・・
ベアのIC、7・・・封止樹脂、8・・・遮光ケース、
12・・・レンズ取付部(取付脚)、13・・・レン
ズ、31・・・配線基板。1, 1a ... substrate, 3 ... solid-state image sensor, 6 ...
Bare IC, 7: sealing resin, 8: light shielding case,
12: lens mounting portion (mounting leg), 13: lens, 31: wiring board.
フロントページの続き (72)発明者 土持 誠 東京都品川区北品川6丁目7番35号 ソニ ー株式会社内Continued on the front page (72) Inventor Makoto Dochimo Sony Corporation 7-35 Kita Shinagawa, Shinagawa-ku, Tokyo
Claims (6)
体撮像素子の周辺回路を成す1又は複数のベアのIC
と、 を少なくとも備え、 上記ベアのICが樹脂で封止されてなることを特徴とす
る固体撮像装置。1. A solid-state imaging device, and one or more bare ICs formed on a back surface or a back surface side of the solid-state imaging device and forming a peripheral circuit of the solid-state imaging device.
And a solid-state imaging device, wherein the bare IC is sealed with a resin.
と、 上記パッケージの内底面側に設けられ、上記固体撮像素
子とはパッケージの多層配線を介して接続されたところ
の周辺回路を成す1又は複数のベアのICと、 を備えたことを特徴とする固体撮像装置。2. A package having a multilayer wiring structure, a solid-state imaging device provided on an outer bottom surface side of the package, and a solid-state imaging device provided on an inner bottom surface side of the package, wherein the solid-state imaging device is connected via a multilayer wiring of the package. A solid-state imaging device comprising: one or a plurality of bare ICs forming a connected peripheral circuit.
が設けられ、該パッケージの一又は両面にも1又は複数
のベアのICが設けられたことを特徴とする請求項2記
載の固体撮像装置3. A package having a multi-stage structure, a package having another multilayer wiring structure provided on at least one step, and one or a plurality of bare ICs provided on one or both sides of the package. The solid-state imaging device according to claim 2, wherein
絞り孔を有する遮光ケースと、 上記遮光ケースの内側に位置し、上記絞り孔を通る光に
よる被写体像を上記固体撮像素子表面に結像するレンズ
とを備えたことを特徴とする請求項1、2又は3記載の
固体撮像装置。4. A light-shielding case having an aperture for restricting light from the outside to the surface of the solid-state imaging device; and a subject image located inside the light-shielding case and formed by light passing through the aperture and formed on the surface of the solid-state imaging device. The solid-state imaging device according to claim 1, further comprising a lens that forms an image.
を静電シールドするシールド部分を有することを特徴と
する請求項2、3又は4記載の固体撮像装置。5. The solid-state imaging device according to claim 2, further comprising a shield portion for electrostatically shielding between different regions in the internal wiring of the package.
撮像装置を用いたことを特徴とするカメラ。6. A camera using the solid-state imaging device according to claim 1, 2, 3, 4, or 5.
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21886096A JP3417225B2 (en) | 1996-05-17 | 1996-08-20 | Solid-state imaging device and camera using it |
| US08/855,637 US6795120B2 (en) | 1996-05-17 | 1997-05-13 | Solid-state imaging apparatus and camera using the same |
| EP97107881A EP0807976B1 (en) | 1996-05-17 | 1997-05-14 | Solid-state imaging apparatus and camera using the same |
| DE69739498T DE69739498D1 (en) | 1996-05-17 | 1997-05-14 | Solid state imaging apparatus and use in a camera |
| DE69739708T DE69739708D1 (en) | 1996-05-17 | 1997-05-14 | The solid state imaging device |
| EP06014846.7A EP1715524B1 (en) | 1996-05-17 | 1997-05-14 | Solid-state imaging apparatus |
| EP06014847A EP1715525B1 (en) | 1996-05-17 | 1997-05-14 | Solid-state imaging apparatus |
| EP06014848.3A EP1715526B1 (en) | 1996-05-17 | 1997-05-14 | Solid-state imaging apparatus and camera using the same |
| US10/891,633 US8098309B2 (en) | 1996-05-17 | 2004-07-15 | Solid-state imaging apparatus and camera using the same |
| US13/213,777 US8564702B2 (en) | 1996-05-17 | 2011-08-19 | Solid-state imaging apparatus and camera using the same |
| US14/032,366 US20140042578A1 (en) | 1996-05-17 | 2013-09-20 | Solid-state imaging apparatus and camera using the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8-122931 | 1996-05-17 | ||
| JP12293196 | 1996-05-17 | ||
| JP21886096A JP3417225B2 (en) | 1996-05-17 | 1996-08-20 | Solid-state imaging device and camera using it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1032323A true JPH1032323A (en) | 1998-02-03 |
| JP3417225B2 JP3417225B2 (en) | 2003-06-16 |
Family
ID=26459964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21886096A Expired - Fee Related JP3417225B2 (en) | 1996-05-17 | 1996-08-20 | Solid-state imaging device and camera using it |
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| Country | Link |
|---|---|
| JP (1) | JP3417225B2 (en) |
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| JP2001358997A (en) * | 2000-06-12 | 2001-12-26 | Mitsubishi Electric Corp | Semiconductor device |
| JP2002204400A (en) * | 2000-12-28 | 2002-07-19 | Matsushita Electric Ind Co Ltd | Image sensor module with lens |
| JP2002252357A (en) * | 2001-02-22 | 2002-09-06 | Sunx Ltd | Photoelectric sensor |
| KR20030007117A (en) * | 2001-07-11 | 2003-01-23 | 에무.디.아이 가부시키가이샤 | Solid-state image sensing device and method of manufacturing the device |
| KR100385590B1 (en) * | 2000-11-20 | 2003-05-27 | 삼성전기주식회사 | Package module of solid state image sensing device |
| JP2004153855A (en) * | 2003-12-24 | 2004-05-27 | Mitsubishi Electric Corp | Imaging device |
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| KR100494044B1 (en) * | 2001-02-02 | 2005-06-13 | 샤프 가부시키가이샤 | Image pickup device and process for producing the same |
| WO2006080359A1 (en) * | 2005-01-26 | 2006-08-03 | Matsushita Electric Industrial Co., Ltd. | Image pickup device |
| US7110033B2 (en) | 2000-04-07 | 2006-09-19 | Mitsubishi Denki Kabushiki Kaisha | Imaging device having an imaging element mounted on a substrate |
| KR100673642B1 (en) | 2005-11-03 | 2007-01-24 | 삼성전기주식회사 | Camera module with auto focus |
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| JP2001319985A (en) * | 2000-02-29 | 2001-11-16 | Agilent Technol Inc | Chip mount type sealing structure |
| US7110033B2 (en) | 2000-04-07 | 2006-09-19 | Mitsubishi Denki Kabushiki Kaisha | Imaging device having an imaging element mounted on a substrate |
| JP2001358997A (en) * | 2000-06-12 | 2001-12-26 | Mitsubishi Electric Corp | Semiconductor device |
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