JPH10339680A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPH10339680A JPH10339680A JP15099297A JP15099297A JPH10339680A JP H10339680 A JPH10339680 A JP H10339680A JP 15099297 A JP15099297 A JP 15099297A JP 15099297 A JP15099297 A JP 15099297A JP H10339680 A JPH10339680 A JP H10339680A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- pressure sensor
- resistors
- output
- operational amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
(57)【要約】
【課題】小型化、低コスト化を図るため、オフセット電
圧調整のために必要な素子数を抑え、集積化された圧力
センサ中に、センサの温度依存性に影響されることのな
いオフセット電圧の調整回路を搭載し外部からの直流電
圧によってオフセット電圧の調整を容易にできるように
する。
【解決手段】歪みゲージブリッジ１４〜１７の出力Ｖin
を抵抗ｒ6 、演算増幅器１２、並列抵抗Ｒ1 で増幅す
る。並列抵抗Ｒ1 は正の温度特性を有し、歪みゲージ出
力の圧力信号成分の持つ負の温度特性を補償する。また
外部からの直流電圧ＶｒはＲ1 ／Ｒ2 の倍率で増幅され
るが、並列抵抗Ｒ2 は並列抵抗Ｒ1 と同じ正の温度特性
を有しているので、圧力センサの温度依存性に影響され
ることなく外部からの直流電圧でオフセット電圧の調整
が可能となる。
(57) [Summary] To reduce the size and cost, the number of elements required for offset voltage adjustment is reduced, and the temperature dependency of the sensor is affected in an integrated pressure sensor. And an offset voltage adjustment circuit that does not cause the offset voltage to be easily adjusted by an external DC voltage. An output Vin of a strain gauge bridge 14-17 is provided.
Is amplified by the resistor r6, the operational amplifier 12, and the parallel resistor R1. The parallel resistor R1 has a positive temperature characteristic and compensates for a negative temperature characteristic of the pressure signal component of the strain gauge output. The external DC voltage Vr is amplified by a factor of R1 / R2. However, since the parallel resistor R2 has the same positive temperature characteristic as the parallel resistor R1, it is affected by the temperature dependency of the pressure sensor. Instead, the offset voltage can be adjusted with an external DC voltage.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、自動車や民生機器
等に広く用いられている半導体圧力センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor widely used in automobiles, consumer appliances, and the like.
【０００２】[0002]
【従来の技術】図４は、従来より用いられている圧力セ
ンサの出力オフセット電圧の外部調整回路を有する回路
構成例である。図４において、３０は圧力センサ、２１
は電源入力Ｖcc端子、２２は圧力センサ３０の出力Ｖ0
端子、２３はアース電位Ｇ端子、３１は演算増幅器６と
抵抗ｒ1 〜ｒ5 とより構成されたオフセット調整回路、
２４はオフセット調整回路３１の出力Ｖ01端子、２５は
オフセット調整用の外部入力Ｖｒ端子である。このよう
な構成において、オフセット調整回路３１の出力Ｖ01は
次式で与えられる。2. Description of the Related Art FIG. 4 shows an example of a circuit configuration having an external adjustment circuit for an output offset voltage of a conventionally used pressure sensor. In FIG. 4, reference numeral 30 denotes a pressure sensor;
Is a power input Vcc terminal, and 22 is an output V0 of the pressure sensor 30.
Terminal 23, a ground potential G terminal, 31 an offset adjustment circuit composed of the operational amplifier 6 and resistors r1 to r5,
Reference numeral 24 denotes an output V01 terminal of the offset adjustment circuit 31, and reference numeral 25 denotes an external input Vr terminal for offset adjustment. In such a configuration, the output V01 of the offset adjustment circuit 31 is given by the following equation.
【０００３】[0003]
【数１】 (Equation 1)
【０００４】右辺第１項は圧力信号電圧が含まれ、右辺
第２、第３項は圧力信号成分の含まれないオフセット成
分である。外部入力Ｖｒを変化させることにより、出力
Ｖ01のオフセット成分を調整することが可能である。な
おオフセット調整回路３１は反転増幅回路を使用してい
るが、非反転増幅回路で同様の機能を有する回路構成と
することも可能である。The first term on the right side includes a pressure signal voltage, and the second and third terms on the right side are offset components that do not include a pressure signal component. By changing the external input Vr, the offset component of the output V01 can be adjusted. Although the offset adjusting circuit 31 uses an inverting amplifier circuit, a non-inverting amplifier circuit having a similar function may be used.
【０００５】[0005]
【発明が解決しようとする課題】図４に示すオフセット
調整回路は外部入力電圧により圧力センサのオフセット
電圧の調整機能を持たせた一般的な回路例であるが、オ
フセット電圧の調整のために、演算増幅器を１個、抵抗
を５個新たに必要とするため、圧力センサがモノリシッ
クに集積されたセンサであってもチップ外に回路部品を
接続しなければならず、センサの小型化、低コスト化を
妨げる要因であった。The offset adjustment circuit shown in FIG. 4 is a general example of a circuit having an offset voltage adjustment function of a pressure sensor by an external input voltage. Since one operational amplifier and five new resistors are required, even if the pressure sensor is a monolithically integrated sensor, circuit components must be connected outside the chip, resulting in a smaller sensor and lower cost. It was a factor that hindered the conversion.
【０００６】本発明の目的は、上述の問題点を解決し、
オフセット電圧の調整のために必要な素子数を抑え、集
積化された圧力センサ中に、圧力センサの温度依存性に
影響されることのないオフセット電圧の調整回路を搭載
し、外部からの直流電圧によってオフセット電圧の調整
を容易に行うことができるようにすることにある。An object of the present invention is to solve the above-mentioned problems,
The number of elements required to adjust the offset voltage is reduced, and the integrated pressure sensor is equipped with an offset voltage adjustment circuit that is not affected by the temperature dependence of the pressure sensor. Accordingly, it is possible to easily adjust the offset voltage.
【０００７】[0007]
【課題を解決するための手段】前記課題を解決するため
に、本発明においては、集積化した半導体圧力センサ内
の信号処理部に、演算増幅器と、該演算増幅器の反転入
力端子と出力端子間に接続した正の温度依存性を有する
第１の抵抗もしくは抵抗群と、外部より直流電圧を入力
する端子部と、該端子部と前記演算増幅器の反転入力端
子間に接続した前記第１の抵抗もしくは抵抗群と同じ正
の温度依存性を有する第２の抵抗もしくは抵抗群と、を
具備する構成とした。In order to solve the above-mentioned problems, according to the present invention, an operational amplifier and an inverting input terminal and an output terminal of the operational amplifier are provided in a signal processing unit in an integrated semiconductor pressure sensor. A first resistor or group of resistors having a positive temperature dependency, a terminal for inputting a DC voltage from outside, and the first resistor connected between the terminal and an inverting input terminal of the operational amplifier. Alternatively, a second resistor or a resistor group having the same positive temperature dependency as the resistor group is provided.
【０００８】かかる構成とすることにより、外部からの
直流電圧による圧力センサ出力のオフセット電圧の調整
を、圧力センサの温度依存性に影響されることなく行う
ことができる。With this configuration, the offset voltage of the pressure sensor output can be adjusted by the external DC voltage without being affected by the temperature dependence of the pressure sensor.
【０００９】[0009]
【発明の実施の形態】図１は、本発明の実施例を示す回
路構成図である。図１において、１４〜１７はシリコン
ダイヤフラム上に拡散で形成された歪みゲージ抵抗であ
り、ブリッジ回路に構成されている。ブリッジ回路の一
方の出力はボルテージホロワ回路を構成する演算増幅器
１３の非反転入力端子に接続され、その出力端子は抵抗
ｒ6 の一方に接続される。抵抗ｒ6 の他方は演算増幅器
１２の反転入力端子に接続される。ブリッジ回路の他方
の出力は演算増幅器１２の非反転入力端子に接続され
る。演算増幅器１２の反転入力端子と出力端子Ｖ0 との
間に並列抵抗Ｒ1 が接続され、並列抵抗Ｒ1 は調整抵抗
ｒ7 と抵抗ｒａとから構成されている。外部より直流電
圧を入力する端子Ｖｒと演算増幅器１２の反転入力端子
との間に並列抵抗Ｒ2 が接続され、並列抵抗Ｒ2 は調整
抵抗ｒ12と抵抗ｒｄとから構成されている。電源端子Ｖ
ccと演算増幅器１２の反転入力端子との間に抵抗群Ｒ3
が接続され、抵抗群Ｒ3 は調整抵抗ｒ8 に並列に接続さ
れる調整抵抗ｒ10と抵抗ｒｂとの直列接続から構成され
ている。演算増幅器１２の反転入力端子とアース電位端
子Ｇとの間に抵抗群Ｒ4 が接続され、抵抗群Ｒ4 は調整
抵抗ｒ9 に並列に接続される調整抵抗ｒ11と抵抗ｒｃと
の直列接続から構成されている。これらはすべて集積化
されたセンサ中に搭載されている。Ｖinは歪みゲージブ
リッジの出力である。FIG. 1 is a circuit diagram showing an embodiment of the present invention. In FIG. 1, reference numerals 14 to 17 denote strain gauge resistors formed by diffusion on a silicon diaphragm, and constitute a bridge circuit. One output of the bridge circuit is connected to a non-inverting input terminal of an operational amplifier 13 constituting a voltage follower circuit, and its output terminal is connected to one of the resistors r6. The other end of the resistor r6 is connected to the inverting input terminal of the operational amplifier 12. The other output of the bridge circuit is connected to the non-inverting input terminal of the operational amplifier 12. A parallel resistor R1 is connected between the inverting input terminal and the output terminal V0 of the operational amplifier 12, and the parallel resistor R1 is composed of an adjusting resistor r7 and a resistor ra. A parallel resistor R2 is connected between a terminal Vr for inputting a DC voltage from the outside and an inverting input terminal of the operational amplifier 12, and the parallel resistor R2 includes an adjusting resistor r12 and a resistor rd. Power supply terminal V
A resistor group R3 is connected between cc and the inverting input terminal of the operational amplifier 12.
Is connected, and the resistor group R3 is composed of a series connection of an adjusting resistor r10 and a resistor rb connected in parallel with the adjusting resistor r8. A resistor group R4 is connected between the inverting input terminal of the operational amplifier 12 and the ground potential terminal G, and the resistor group R4 is composed of a series connection of an adjusting resistor r11 and a resistor rc connected in parallel with the adjusting resistor r9. I have. These are all mounted in an integrated sensor. Vin is the output of the strain gauge bridge.
【００１０】このような回路構成において、歪みゲージ
によるブリッジ回路の出力Ｖinは、演算増幅器１３によ
りインピーダンス変換された後、演算増幅器１２、抵抗
ｒ6及び並列抵抗Ｒ1 により構成された増幅器により増
幅される。増幅度は抵抗ｒ6にて調整される。抵抗ｒａ
は正の温度特性を持たせてあるため、並列抵抗Ｒ1 を帰
還抵抗とする増幅器は正の温度特性を有し、歪みゲージ
によるブリッジ回路の出力Ｖinの圧力信号成分の持つ負
の温度特性を補償している。この調整抵抗は抵抗ｒ7 で
ある。In such a circuit configuration, the output Vin of the bridge circuit using the strain gauge is subjected to impedance conversion by the operational amplifier 13 and then amplified by the amplifier composed of the operational amplifier 12, the resistor r6 and the parallel resistor R1. The amplification degree is adjusted by the resistor r6. Resistance ra
Has a positive temperature characteristic, the amplifier using the parallel resistor R1 as a feedback resistor has a positive temperature characteristic and compensates for the negative temperature characteristic of the pressure signal component of the output Vin of the bridge circuit by the strain gauge. doing. This adjustment resistor is a resistor r7.
【００１１】また、圧力センサの出力Ｖ0 のオフセット
電圧の零点調整は抵抗ｒ8 および抵抗ｒ9 で行われ、オ
フセット電圧の温度特性の補償（零点温度補償）は直列
抵抗ｒ10、ｒｂと、直列抵抗ｒ11、ｒｃで行われる。こ
の調整抵抗は抵抗ｒ10及びｒ11である。端子Ｖｒには外
部から直流電圧Ｖｒが入力され、この電圧はＲ1 ／Ｒ2
の倍率で増幅されて圧力センサの出力電圧Ｖ0 に重畳さ
れる。このとき、抵抗ｒ12は並列抵抗Ｒ2 の温度依存性
が、並列抵抗Ｒ1 の温度依存性と同じになるように調整
される。The zero point adjustment of the offset voltage of the output V0 of the pressure sensor is performed by the resistors r8 and r9, and the temperature characteristics of the offset voltage are compensated (zero point temperature compensation) by the series resistors r10 and rb and the series resistors r11 and r11. rc. The adjusting resistors are resistors r10 and r11. A DC voltage Vr is input to the terminal Vr from the outside, and this voltage is R1 / R2
And is superimposed on the output voltage V0 of the pressure sensor. At this time, the resistance r12 is adjusted so that the temperature dependence of the parallel resistance R2 is the same as the temperature dependence of the parallel resistance R1.
【００１２】圧力センサの出力電圧Ｖ0 を式で表現する
と、次式のようになる。The output voltage V0 of the pressure sensor can be expressed by the following equation.
【００１３】[0013]
【数２】 (Equation 2)
【００１４】ここで、歪みゲージの差圧ゼロのときの値
は等しいものとし、加圧したときのブリッジ出力の＋
側、−側は対称に変化するものとする。（数２）の右辺
第１項は、通常、Ｒ1 ／ｒ6 ≫Ｒ1 ／２Ｒ2 ，Ｒ1 ／２
Ｒ3 ，Ｒ1 ／２Ｒ4 となるように選定するので、その場
合には次式のようになる。Here, it is assumed that the values when the differential pressure of the strain gauge is zero are equal, and the value of +
The side and the − side change symmetrically. The first term on the right-hand side of (Equation 2) is usually R1 / r61R1 / 2R2, R1 / 2.
Since R3 and R1 / 2R4 are selected, in this case, the following equation is obtained.
【００１５】[0015]
【数３】 (Equation 3)
【００１６】ここで、右辺第１項は増幅された歪みゲー
ジブリッジ出力、第３項は抵抗群Ｒ3 及びＲ4 によるオ
フセット電圧成分、第４項は並列抵抗Ｒ2 によるオフセ
ット電圧成分である。第４項に着目すると、外部からの
入力電圧ＶｒがＶcc／２に等しければゼロであるが、Ｖ
ｒ＞Ｖcc／２であれば出力電圧Ｖ0 をマイナス方向に、
Ｖｒ＜Ｖcc／２であれば出力電圧Ｖ0 をプラス方向にシ
フトさせることができる。Here, the first term on the right side is the amplified strain gauge bridge output, the third term is the offset voltage component due to the resistor groups R3 and R4, and the fourth term is the offset voltage component due to the parallel resistor R2. Paying attention to the fourth term, if the external input voltage Vr is equal to Vcc / 2, it is zero.
If r> Vcc / 2, the output voltage V0 is shifted in the negative direction.
If Vr <Vcc / 2, the output voltage V0 can be shifted in the plus direction.
【００１７】これらについて、図２及び図３を用いて説
明する。図２はこの発明の入出力特性を示す図であり、
図３はこの発明の温度特性を示す図である。（数３）に
おいて、Ｒ1 ／Ｒ4 ＝Ｒ1 ／Ｒ3 ，Ｒ1 ／Ｒ2 ＝２であ
り、また圧力感度は４０ｍＶ／ＫＰａに調整されてい
る。図２において、Ｖｒ＝２．５ＶからＶｒをプラスま
たはマイナス方向に０．５Ｖ移動させると、圧力センサ
出力Ｖ0 のオフセット成分はそれぞれマイナスまたはプ
ラス方向に１．０Ｖシフトする。These will be described with reference to FIGS. 2 and 3. FIG. 2 is a diagram showing input / output characteristics of the present invention.
FIG. 3 is a diagram showing temperature characteristics of the present invention. In (Equation 3), R1 / R4 = R1 / R3 and R1 / R2 = 2, and the pressure sensitivity is adjusted to 40 mV / KPa. In FIG. 2, when Vr is moved by 0.5 V in the plus or minus direction from Vr = 2.5 V, the offset component of the pressure sensor output V0 is shifted by 1.0 V in the minus or plus direction, respectively.
【００１８】また、同一のウェハプロセスで形成された
薄膜抵抗、拡散抵抗の場合、個々の抵抗の比は、一般に
チップ、ロットの違いによるばらつきは十分小さく、む
しろ抵抗パターンの形状で一義的に決定される。また、
同一プロセスで形成された抵抗の温度特性も互いに等し
くなる。この場合、抵抗ｒａ及びｒｄを拡散抵抗とし、
抵抗ｒ7 及びｒ12を調整可能な薄膜抵抗とすると、抵抗
ｒａ＝２×抵抗ｒｄとなるようにパターン形状を決定
し、さらに抵抗ｒ7 ＝２×抵抗ｒ12となるように抵抗ｒ
7 及びｒ12を調整することにより、温度によらずＲ1 ／
Ｒ2 ＝２が成り立つことになり、図３に示すようにＶｒ
の変化による圧力センサ出力Ｖ0 のオフセット電圧成分
のシフト量は、温度によらず一定となる。In the case of a thin film resistor and a diffused resistor formed in the same wafer process, the ratio of the individual resistors generally has a sufficiently small variation due to the difference between the chip and the lot, but is determined uniquely by the shape of the resistor pattern. Is done. Also,
Temperature characteristics of resistors formed by the same process are also equal to each other. In this case, the resistances ra and rd are diffusion resistances,
Assuming that the resistors r7 and r12 are adjustable thin film resistors, the pattern shape is determined so that the resistance ra = 2 × resistance rd, and the resistance r is further determined so that the resistance r7 = 2 × resistance r12.
By adjusting 7 and r12, R1 /
R2 = 2 holds, and as shown in FIG.
The shift amount of the offset voltage component of the pressure sensor output V0 due to the change of the pressure becomes constant regardless of the temperature.
【００１９】[0019]
【発明の効果】本発明によれば、演算増幅器の反転入力
端子と出力端子との間に接続した正の温度依存性を有す
る第１の抵抗もしくは抵抗群と、外部より直流電圧を入
力する端子部と、この端子部と前記演算増幅器の反転入
力端子との間に接続した前記第１の抵抗もしくは抵抗群
と同じ正の温度依存性を有する第２の抵抗もしくは抵抗
群とを具備したことにより、わずか２つの抵抗を追加す
ることで、圧力センサの温度依存性に影響されずに、外
部からの直流電圧によってオフセット電圧の調整を容易
に行うことができ、かつ追加した抵抗を容易に同一チッ
プ上に形成しモノリシック化することが可能となる。According to the present invention, a first resistor or group of resistors having a positive temperature dependency connected between an inverting input terminal and an output terminal of an operational amplifier, and a terminal for inputting a DC voltage from the outside. And a second resistor or group of resistors having the same positive temperature dependency as the first resistor or group of resistors connected between the terminal and the inverting input terminal of the operational amplifier. By adding only two resistors, the offset voltage can be easily adjusted by an external DC voltage without being affected by the temperature dependency of the pressure sensor, and the added resistors can be easily connected to the same chip. It can be formed on a monolithic structure.
【図１】この発明の実施例を示す回路構成図。FIG. 1 is a circuit diagram showing an embodiment of the present invention.
【図２】この発明の入出力特性を示す図。FIG. 2 is a diagram showing input / output characteristics of the present invention.
【図３】この発明の温度特性を示す図。FIG. 3 is a diagram showing temperature characteristics of the present invention.
【図４】従来技術の実施例を示す回路構成図。FIG. 4 is a circuit diagram showing an embodiment of the prior art.
Ｒ１，Ｒ２…並列抵抗、Ｒ３，Ｒ４…抵抗群、ｒ６…抵
抗、１２，１３…演算増幅器、１４，１５，１６，１７
…歪みゲージ抵抗、Ｖcc…電源入力端子、Ｖ0 …圧力セ
ンサ出力端子、Ｇ…アース電位端子、Ｖｒ…外部入力端
子、ｒ７，ｒ８，ｒ９，ｒ10，ｒ11，ｒ12…調整抵抗、
ｒａ，ｒｂ，ｒｃ，ｒｄ…抵抗。R1, R2: parallel resistance, R3, R4: resistance group, r6: resistance, 12, 13: operational amplifier, 14, 15, 16, 17
... Strain gauge resistance, Vcc ... Power input terminal, V0 ... Pressure sensor output terminal, G ... Ground potential terminal, Vr ... External input terminal, r7, r8, r9, r10, r11, r12 ... Adjustment resistance
ra, rb, rc, rd ... resistance.
Claims (4)
の半導体歪みゲージをシリコンダイヤフラム上に分散配
置したセンシング部と、該センシング部からの圧力変化
に応じて発生する電気信号の増幅、零点調整及び温度補
償を行う機能を有する信号処理部とを１つのチップ上に
集積化した半導体圧力センサにおいて、前記信号処理部
は、演算増幅器と、該演算増幅器の反転入力端子と出力
端子間に接続した正の温度依存性を有する第１の抵抗も
しくは抵抗群と、外部より直流電圧を入力する端子部
と、該端子部と前記演算増幅器の反転入力端子間に接続
した前記第１の抵抗もしくは抵抗群と同じ正の温度依存
性を有する第２の抵抗もしくは抵抗群と、を具備したこ
とを特徴とする半導体圧力センサ。1. A sensing part in which a plurality of semiconductor strain gauges formed by a semiconductor diffusion process are dispersedly arranged on a silicon diaphragm, and an electric signal generated according to a pressure change from the sensing part is amplified, a zero point is adjusted, and a temperature is adjusted. In a semiconductor pressure sensor in which a signal processing unit having a function of performing compensation is integrated on one chip, the signal processing unit includes an operational amplifier and a positive signal connected between an inverting input terminal and an output terminal of the operational amplifier. A first resistor or group of resistors having a temperature dependency, a terminal for inputting a DC voltage from outside, and the same as the first resistor or group of resistors connected between the terminal and the inverting input terminal of the operational amplifier A second resistor or a group of resistors having a positive temperature dependency.
の電気信号出力端子とを有する歪みゲージからなるブリ
ッジ回路で、該ブリッジ回路の一方の出力はボルテージ
ホロワ回路に入力され、該ボルテージホロワ回路の出力
は抵抗を介して前記演算増幅器の反転入力端子に接続さ
れ、前記電源端子の一方と前記演算増幅器の反転入力端
子との間に第３の抵抗もしくは抵抗群が接続され、前記
電源端子の他方と前記演算増幅器の反転入力端子との間
に第４の抵抗もしくは抵抗群が接続されることを特徴と
する請求項１記載の半導体圧力センサ。2. A sensing circuit comprising: a bridge circuit comprising a strain gauge having a pair of power terminals and a pair of electric signal output terminals. One output of the bridge circuit is input to a voltage follower circuit, The output of the power circuit is connected to the inverting input terminal of the operational amplifier via a resistor, and a third resistor or a group of resistors is connected between one of the power supply terminals and the inverting input terminal of the operational amplifier. The semiconductor pressure sensor according to claim 1, wherein a fourth resistor or a group of resistors is connected between the other of the terminals and an inverting input terminal of the operational amplifier.
は圧力センサ出力のオフセット電圧の零点調整をする調
整抵抗を有することを特徴とする請求項２記載の半導体
圧力センサ。3. The semiconductor pressure sensor according to claim 2, wherein said third and fourth resistors or resistor groups have an adjustment resistor for adjusting a zero point of an offset voltage of a pressure sensor output.
は圧力センサ出力のオフセット電圧の零点温度補償をす
る抵抗を有することを特徴とする請求項２記載の半導体
圧力センサ。4. The semiconductor pressure sensor according to claim 2, wherein said third and fourth resistances or resistance groups have resistances for compensating a zero point temperature of an offset voltage of a pressure sensor output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15099297A JP3544102B2 (en) | 1997-06-09 | 1997-06-09 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15099297A JP3544102B2 (en) | 1997-06-09 | 1997-06-09 | Semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10339680A true JPH10339680A (en) | 1998-12-22 |
| JP3544102B2 JP3544102B2 (en) | 2004-07-21 |
Family
ID=15508925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15099297A Expired - Fee Related JP3544102B2 (en) | 1997-06-09 | 1997-06-09 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3544102B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002188974A (en) * | 2000-12-20 | 2002-07-05 | Fuji Electric Co Ltd | Semiconductor sensor |
| JP2002236070A (en) * | 2001-02-07 | 2002-08-23 | Tgk Co Ltd | Pressure sensor |
| US6604423B1 (en) | 1999-10-15 | 2003-08-12 | Smc Kabushiki Kaisha | Pressure sensor, pressure sensor control apparatus, and pressure sensor system |
| CN115790966A (en) * | 2022-11-17 | 2023-03-14 | 中国航发西安动力控制科技有限公司 | Piezoresistive pressure sensor disconnection alarming and signal collecting circuit |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12160212B2 (en) * | 2021-01-21 | 2024-12-03 | Maxim Integrated Products, Inc. | Offset voltage compensation |
-
1997
- 1997-06-09 JP JP15099297A patent/JP3544102B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6604423B1 (en) | 1999-10-15 | 2003-08-12 | Smc Kabushiki Kaisha | Pressure sensor, pressure sensor control apparatus, and pressure sensor system |
| JP2002188974A (en) * | 2000-12-20 | 2002-07-05 | Fuji Electric Co Ltd | Semiconductor sensor |
| JP2002236070A (en) * | 2001-02-07 | 2002-08-23 | Tgk Co Ltd | Pressure sensor |
| CN115790966A (en) * | 2022-11-17 | 2023-03-14 | 中国航发西安动力控制科技有限公司 | Piezoresistive pressure sensor disconnection alarming and signal collecting circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3544102B2 (en) | 2004-07-21 |
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