JPH10340980A - BGA connection structure - Google Patents
BGA connection structureInfo
- Publication number
- JPH10340980A JPH10340980A JP9149240A JP14924097A JPH10340980A JP H10340980 A JPH10340980 A JP H10340980A JP 9149240 A JP9149240 A JP 9149240A JP 14924097 A JP14924097 A JP 14924097A JP H10340980 A JPH10340980 A JP H10340980A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- connection structure
- bga
- stress
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Wire Bonding (AREA)
Abstract
(57)【要約】
【課題】LSIより大型の部品或いはモジュール基板と
回路基板とをBGAで接続した場合、モジュール基板と
回路基板との熱膨張率が異なると、熱履歴を受けたと
き、BGA接続部に繰り返し応力が加わり、はんだが疲
労破壊して断線が起きるのを防止する。
【解決手段】はんだ3の内部にプラスチックボール7を
内包させ、ボール7とはんだの下地層としてのニッケル
膜5との界面に隙間6を生じさせると共に、はんだ3の
断面を鼓状の形状にする。はんだに加わる歪みは隙間6
で吸収され、応力が緩和される。又、はんだ3の断面が
鼓状であるので、応力が集中し難くなる。モジュール基
板および回路基板の電極2A,2Bの平面形状を、引っ
張り応力の方向に引伸ばされた突起部を持つ形状にする
と、温度変化の繰返しに対する接続部の寿命を、はんだ
量のばらつきに影響されないようにできる。
(57) [Summary] When a component larger than an LSI or a module board and a circuit board are connected by a BGA, if the module board and the circuit board have different coefficients of thermal expansion, the BGA is subjected to a thermal history. A stress is repeatedly applied to the connection portion, thereby preventing the solder from being broken by fatigue and causing disconnection. A plastic ball is included in a solder, a gap is formed at an interface between the ball and a nickel film as a base layer of the solder, and a cross section of the solder is shaped like a drum. . Strain applied to solder is gap 6
And the stress is relieved. Also, since the cross section of the solder 3 is drum-shaped, it is difficult for stress to concentrate. When the planar shape of the electrodes 2A and 2B of the module board and the circuit board is a shape having a projection stretched in the direction of the tensile stress, the life of the connection portion against repeated temperature changes is not affected by the variation in the amount of solder. I can do it.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、電子部品のBGA
(ボール グリッド アレイ:Ball Grid A
rray)接続構造に関し、特に、例えばLSIをパッ
ケージした部品或いは電子部品を複数搭載したモジュー
ル基板などのような、LSIに比べて大型の部品或いは
基板と回路基板とを接続するためのBGA接続構造に関
する。The present invention relates to a BGA for electronic parts.
(Ball Grid Array: Ball Grid A
(rray) connection structure, and more particularly, to a BGA connection structure for connecting a circuit board or a component or board larger than an LSI, such as a module board on which a plurality of LSI packaged components or electronic components are mounted. .
【0002】[0002]
【従来の技術】LSIに代表される多ピンの半導体装置
をパッケージする技術の一つにBGA接続が知られてい
るが、この技術による接続構造(BGA接続構造)は、
LSIをパッケージした部品或いは電子部品を複数搭載
したモジュール基板のような、LSIより大型の部品や
基板と回路基板との接続にも利用できる。このような大
型部品或いは基板と回路基板との接続に用いられるBG
A接続構造は、LSIのパッケージングに実用化されて
いるBGA接続構造と、基本的には同じである。すなわ
ち、図10に接続部の拡大断面図を示すように、接続す
る側(以後、上記モジュール基板で代表させる)1と接
続される側(同、回路基板)4それぞれの電極を、それ
ぞれの基板の面内に、同一ピッチで格子状に配置し、モ
ジュール基板1の電極形成面と回路基板4の電極形成面
とを対置させ、対応する電極2A,2Bどうしをはんだ
3で接続する構造である。2. Description of the Related Art BGA connection is known as one of the techniques for packaging a multi-pin semiconductor device represented by an LSI. The connection structure (BGA connection structure) according to this technique is as follows.
The present invention can also be used for connection between a circuit board and a component or board larger than the LSI, such as a module board on which a plurality of LSI packaged components or electronic components are mounted. BG used for connection between such large parts or circuit board and circuit board
The A connection structure is basically the same as the BGA connection structure practically used for packaging of LSI. That is, as shown in an enlarged cross-sectional view of the connection portion in FIG. 10, the electrodes on the connection side (hereinafter, referred to as the module substrate) 1 and the connection side (same circuit board) 4 are connected to the respective substrate. Are arranged in the form of a lattice at the same pitch, the electrode forming surface of the module substrate 1 and the electrode forming surface of the circuit board 4 are opposed to each other, and the corresponding electrodes 2A and 2B are connected by solder 3. .
【0003】ところで、このBGA接続構造では、はん
だ3だけで接続すると、接続後のはんだ3の断面形状
は、溶融はんだの表面張力と基板1,4間に加わる力と
の釣り合いで、高さ方向中央部が横方向に張り出した、
太鼓状になることが知られている。ここで、モジュール
基板と回路基板とを含む全体に温度変化が生じた場合を
考える。このとき、モジュール基板1と回路基板4の熱
膨張率とが異なると、一例として図10中に右向き又は
左向きの矢印で示したような、基板面に平行な方向の応
力が、接続部に加わる。そして、図中に破線の丸で囲っ
て示した部分Eにおけるような、はんだ3が電極2Aに
鈍角で接続している接合部分には、引っ張り応力が加わ
り、応力集中が起きる。甚だしい場合には接合部分Eの
はんだに亀裂が入る。このような亀裂は温度変化の繰返
しにより成長し、終には接合部分の破断に至ることがあ
る。In this BGA connection structure, when the connection is made only by the solder 3, the cross-sectional shape of the solder 3 after the connection is determined by the balance between the surface tension of the molten solder and the force applied between the substrates 1 and 4, and the height of the solder 3 in the height direction. The central part overhangs laterally,
It is known to be drum-shaped. Here, a case where a temperature change occurs in the whole including the module substrate and the circuit substrate will be considered. At this time, if the coefficient of thermal expansion of the module substrate 1 is different from the coefficient of thermal expansion of the circuit board 4, stress in a direction parallel to the substrate surface as shown by an arrow pointing right or left in FIG. . Then, a tensile stress is applied to a joint portion where the solder 3 is connected to the electrode 2A at an obtuse angle, such as a portion E indicated by a dashed circle in the drawing, and stress concentration occurs. In severe cases, the solder at the joint E is cracked. Such cracks grow due to repeated temperature changes, and may eventually lead to fracture of the joint.
【0004】上述した、モジュール基板と回路基板とを
BGA接続した場合における両基板間の熱膨張率の相違
に基づく接合部分の破断を防止する一つの方法は、熱膨
張率の差そのものを小さくして、生じる応力を小さくす
ることである。特開平8−64711号公報は、LSI
のパッケージングに係わる発明であって、本発明の主た
る対象である、LSIより大型の部品或いはモジュール
基板と回路基板との接続に直接係わるものではないが、
接続すべき二つの基板間に、それら二つの基板とは熱膨
張率が異なる第3番目の材料の層を挟み込むことにより
応力を緩和する接続技術(従来例1)を開示している。
すなわち、従来例1における接続構造の断面を示す図1
1を参照して、セラミック基板102に、熱膨張・収縮
の際の整合層として厚さ1mmの樹脂基板103を貼り
付け、その樹脂基板103にはんだボール108を設け
ている。そして、上記樹脂基板103の材料に、その熱
膨張率が回路基板(図示せず)の熱膨張率とセラミック
基板102の熱膨張率の中間の値であるような材料を選
択することにより、実効的なセラミック基板102の熱
膨張率を回路基板の熱膨張率に近づけて、接続部の応力
を緩和している。このような従来例1の技術は、本発明
が主として対象とする大型部品、基板の接続に対して
も、応力緩和という作用効果を奏するであろう。[0004] One method for preventing the breakage of a joint portion due to the difference in the coefficient of thermal expansion between the two substrates when the module board and the circuit board are BGA-connected is to reduce the difference in the coefficient of thermal expansion itself. Therefore, it is to reduce the generated stress. JP-A-8-64711 discloses an LSI.
The present invention relates to the packaging of the present invention, and is not directly related to the connection between a component or module board and a circuit board larger than an LSI, which is a main object of the present invention,
There is disclosed a connection technique (conventional example 1) in which a third material layer having a different coefficient of thermal expansion from the two substrates to be connected is sandwiched between the two substrates to reduce stress.
That is, FIG. 1 showing a cross section of a connection structure in Conventional Example 1
1, a resin substrate 103 having a thickness of 1 mm is attached to a ceramic substrate 102 as a matching layer during thermal expansion and contraction, and solder balls 108 are provided on the resin substrate 103. The material of the resin substrate 103 is selected so that its coefficient of thermal expansion is intermediate between the coefficient of thermal expansion of the circuit board (not shown) and the coefficient of thermal expansion of the ceramic substrate 102. The thermal expansion coefficient of the typical ceramic substrate 102 is made close to the thermal expansion coefficient of the circuit board, so that the stress at the connection portion is reduced. Such a technique of Conventional Example 1 will have an effect of stress relaxation even for connection of a large component or a substrate mainly targeted by the present invention.
【0005】BGA接続構造における両基板間の熱膨張
率の相違に基づく接続部の破断を防止する他の方法は、
基板材料の違いによる熱膨張率の差は容認した上で、接
続部のはんだの剛性を小さくして、はんだに加わる歪み
を吸収することである。特開平8−213400号公報
は、そのような歪み吸収技術を適用した電子部品(従来
例2)を開示している。すなわち、上記公報記載の電子
部品における接続部の断面を示す図12を参照すると、
この図に示される接続構造は、はんだバンプ280の内
部に、ポリイミド樹脂製で弾性を持つボール281を備
えている。このボール281は、それ自身が有する弾性
で、電子部品を回路基板(図示せず)に接続する際の押
圧力や加熱時に熱膨張率の相違により生じる歪みを吸収
する。これによりはんだバンプ280に加わる応力は緩
和され、接続部での破断は防止される。この従来例2
も、本発明の主たる対象である大型部品或いは基板と回
路基板との接続に直接係わるものではないが、歪み吸収
による応力緩和という作用効果は、大型部品、基板の接
続に適用した場合においても期待できるであろう。Another method for preventing the breakage of the connection portion due to the difference in the coefficient of thermal expansion between the two substrates in the BGA connection structure is as follows.
The difference in the coefficient of thermal expansion due to the difference in the substrate material is tolerate and reduce the rigidity of the solder at the connection portion to absorb the strain applied to the solder. JP-A-8-213400 discloses an electronic component (conventional example 2) to which such a strain absorption technique is applied. That is, referring to FIG. 12 showing a cross section of a connection part in an electronic component described in the above publication,
The connection structure shown in this figure includes a ball 281 made of polyimide resin and having elasticity inside a solder bump 280. The ball 281 has its own elasticity, and absorbs a strain caused by a difference in a thermal expansion coefficient at the time of heating or pressing when connecting an electronic component to a circuit board (not shown). This alleviates the stress applied to the solder bumps 280 and prevents breakage at the connection. Conventional example 2
Although the present invention is not directly related to the connection between a large component or a substrate and a circuit board, which is the main object of the present invention, the effect of stress relaxation by strain absorption is expected even when applied to the connection of a large component or a substrate. I can do it.
【0006】[0006]
【発明が解決しようとする課題】熱膨張率の異なる二種
類の基板をはんだだけのBGA接続構造によって接続し
た場合、熱履歴を受けると、はんだと基板側の電極との
接合部分付近ではんだ亀裂が生じ、ついには破断する。
各々の基板の熱膨張率が異なり、BGA接続部に剪断力
と引っ張り力が加わることと、接続後のはんだの断面形
状が太鼓状であるということとにより、一部に応力が繰
り返し集中するためである。When two types of substrates having different coefficients of thermal expansion are connected by a BGA connection structure using only solder, when a thermal history is received, a solder crack is generated near the joint between the solder and the electrode on the substrate side. And finally breaks.
Since the thermal expansion coefficients of each substrate are different, the stress is repeatedly concentrated on a part because the shearing force and the pulling force are applied to the BGA connection and the cross-sectional shape of the solder after connection is drum-shaped. It is.
【0007】このような理由による接続部の破断を防止
するには、温度変化により接合部分に生じる応力を何ら
かの方法により緩和することが必要であり、従来例1に
おける、熱膨張率の差を圧縮することにより発生応力の
大きさそのものを小さくする技術や、従来例2におけ
る、はんだ中に含ませた弾性ボールによりはんだに生じ
る歪みを吸収することにより応力を緩和する技術は、有
効であろう。In order to prevent the breakage of the connection portion due to such a reason, it is necessary to relieve the stress generated in the joint portion by a temperature change by some method. The technique of reducing the magnitude of the generated stress itself by doing the above, and the technique of relaxing the stress by absorbing the strain generated in the solder by the elastic ball included in the solder in the conventional example 2 would be effective.
【0008】しかしながら、従来例1の場合は、樹脂基
板103(図11参照)を形成することによってコスト
が上昇するという副作用を伴う。また、樹脂基板103
を挿入することにより、接続部の体積(本来のセラミッ
ク基板102と回路基板との間の体積)が増大してしま
う。前出の特開平8−6471号公報記載の実施例によ
れば、厚みが1mmも増加してしまう。このような接続
部の体積増加は、BGAで実装した電子装置の大型化に
直結するものであり、装置に対する小型、軽量化の要望
が強い現在では、到底認められるものではない。However, in the case of Conventional Example 1, the formation of the resin substrate 103 (see FIG. 11) has a side effect of increasing the cost. Also, the resin substrate 103
, The volume of the connection portion (original volume between the ceramic substrate 102 and the circuit board) is increased. According to the embodiment described in the above-mentioned JP-A-8-6471, the thickness increases by as much as 1 mm. Such an increase in the volume of the connection portion directly leads to an increase in the size of an electronic device mounted by the BGA, and is not recognized at all at present when there is a strong demand for a small and lightweight electronic device.
【0009】一方、従来例2の場合は、はんだバンプ2
80(図12参照)中に含ませるボール281の剛性に
よっては、はんだバンプに加わる応力を吸収しきれな
い。すなわち、本発明の主たる適用対象は、LSIをパ
ッケージした部品或いは電子部品を複数搭載したモジュ
ール基板のような、LSIよりずっと大型の部品や基板
と回路基板との接続である。このような大型モジュール
基板においては、基板面内の電極間距離が大きく、接続
点間の距離が長いので、はんだに加わる歪み量そのもの
が、単なるLSIなどのような小型部品の場合に比べず
っと大きくなる。これに対し、はんだバンプ280中の
ボール281が、例えば従来例2に用いられているよう
なポリイミド樹脂製のものなどでは、剛性が大きすぎ
て、はんだバンプ280の基板側電極との接合部におけ
る変形が、応力を吸収するほどには大きくない。結局、
回路基板やモジュール基板には大きな応力が加わり、モ
ジュール基板や回路基板あるいは、接合部分近傍のはん
だに破壊が生じてしまう。On the other hand, in the case of the conventional example 2, the solder bump 2
Depending on the rigidity of the balls 281 included in the solder bumps 80 (see FIG. 12), the stress applied to the solder bumps cannot be absorbed. That is, a main application object of the present invention is a connection between a circuit board and a component or board much larger than an LSI, such as a module board on which a plurality of LSI components or electronic components are mounted. In such a large module substrate, since the distance between the electrodes in the substrate surface is large and the distance between the connection points is long, the amount of strain applied to the solder itself is much larger than in the case of a small component such as a simple LSI. Become. On the other hand, if the ball 281 in the solder bump 280 is made of, for example, a polyimide resin as used in Conventional Example 2, the rigidity is too large, and the solder 280 in the joint portion of the solder bump 280 with the substrate-side electrode is too large. The deformation is not large enough to absorb the stress. After all,
A large stress is applied to the circuit board or the module board, and the module board, the circuit board, or the solder near the joint is destroyed.
【0010】従って、本発明は、LSIより大型の部品
或いはモジュール基板と回路基板とをBGA構造で接続
する場合、二つの基板の熱膨張率の違いにより接合部分
近傍に配置された部品に加わる歪みを小さくすることで
ある。Therefore, according to the present invention, when a component larger than an LSI or a module board and a circuit board are connected by a BGA structure, a distortion applied to a component arranged near a joint portion due to a difference in thermal expansion coefficient between the two boards. Is to reduce the
【0011】本発明は又、接続部の体積を増やすことな
く、BGA接続構造における熱履歴に対する寿命を長く
することである。Another object of the present invention is to extend the life of the BGA connection structure against thermal history without increasing the volume of the connection.
【0012】[0012]
【課題を解決するための手段】本発明のBGA接続構造
は、電子部品或いは電子部品を複数搭載したモジュール
基板に設けられた電極とこれに接続すべき回路基板面上
の電極とをはんだによりBGA接続したBGA接続構造
において、BGA接続構造のはんだ内部に、はんだに対
する下地層に覆われたプラスチックからなる核を含ま
せ、その核とこれを覆う前記下地層との界面に隙間を設
けたことを特徴とする。According to the BGA connection structure of the present invention, an electrode provided on an electronic component or a module substrate on which a plurality of electronic components are mounted and an electrode on a circuit board surface to be connected to the electrode are soldered to the BGA connection structure. In the connected BGA connection structure, a nucleus made of plastic covered with an underlayer for the solder is included in the solder of the BGA connection structure, and a gap is provided at an interface between the nucleus and the underlayer covering the nucleus. Features.
【0013】又、本発明のBGA接続構造は、上記のB
GA接続構造において、BGA接続で接続される対の電
極に、剪断応力が加わる方向に延びる突起状電極を付け
加えたことを特徴とする。In addition, the BGA connection structure of the present invention
In the GA connection structure, a protruding electrode extending in a direction in which a shear stress is applied is added to a pair of electrodes connected by the BGA connection.
【0014】本発明においては、接続部のはんだの一部
に応力が集中するのを防ぐため、接続のはんだとは異な
る、はんだの下地層に覆われたプラスチック製のボール
を接続部に含ませ、更にそのボールに、線熱膨張係数が
はんだの下地層よりも大きい材料を用いる。そして、ボ
ールとはんだ下地層との熱膨張率の違いを利用し、接続
時の熱工程でプラスチックボールとはんだ下地層とをそ
れらの界面で剥離させて、ボールとはんだ下地層との間
に隙間を設ける。温度変化によって接続部に加わる歪み
は、はんだが上記の隙間の大きさだけ変形することで吸
収される。又、はんだにボールを含ませることにより、
電極近傍のはんだの断面形状を、応力集中の起きない中
窪みの鼓状とし、はんだの破壊を防ぐ。In the present invention, in order to prevent stress from being concentrated on a part of the solder of the connection portion, a plastic ball covered with a solder base layer different from the connection solder is included in the connection portion. Further, a material having a coefficient of linear thermal expansion larger than that of the solder base layer is used for the ball. Then, utilizing the difference in the coefficient of thermal expansion between the ball and the solder underlayer, the plastic ball and the solder underlayer are peeled off at the interface between them in a heat step at the time of connection, and a gap is formed between the ball and the solder underlayer. Is provided. The distortion applied to the connection due to the temperature change is absorbed by the deformation of the solder by the size of the gap. Also, by including balls in the solder,
The cross section of the solder in the vicinity of the electrode is made to have a hollow shape with no stress concentration to prevent solder destruction.
【0015】又、BGA接続すべきモジュール基板側の
電極、回路基板側の電極それぞれの平面形状を、本来の
電極に加えて、剪断応力が加わる方向に延びる突起状電
極を付け加えた形状とすることで、温度変化の繰返しに
対するはんだの寿命がはんだ量の変動に影響されないよ
うにしている。Further, the planar shape of each of the electrode on the module substrate and the electrode on the circuit substrate to be connected to the BGA has a shape obtained by adding a protruding electrode extending in the direction in which shear stress is applied in addition to the original electrode. Thus, the life of the solder with respect to the repetition of the temperature change is not affected by the fluctuation of the solder amount.
【0016】[0016]
【発明の実施の形態】以下に、本発明の実施の形態につ
いて、実施例を用い図面を参照して、説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The embodiments of the present invention will be described below with reference to the drawings using examples.
【0017】(実施例1)図1に、本発明の第1の実施
例(実施例1)における、モジュール基板と回路基板と
の間のBGA接続部の断面を拡大して示す。図1を参照
して、モジュール基板1上の電極2Aと回路基板4側の
電極2Bとが、はんだ3で、接続されている。はんだ3
の断面形状は、高さ方向中央部が凹み、基板面の電極2
A,2Bとの接合面に向かって広がる、鼓状である。は
んだ3の内部には、はんだの下地層(後述する)である
ニッケル膜5に包まれたプラスチック製のボール7が配
置されている。ニッケル膜5とボール7との間には、隙
間6ができている。本実施例の場合、ボール7の直径は
500μmφであり、ボールとニッケル膜との隙間6
は、2〜3μmである。(Embodiment 1) FIG. 1 shows an enlarged cross section of a BGA connection portion between a module board and a circuit board in a first embodiment (Embodiment 1) of the present invention. Referring to FIG. 1, electrodes 2A on module substrate 1 and electrodes 2B on circuit board 4 are connected by solder 3. Solder 3
The cross-sectional shape is such that the center in the height direction is concave, and the electrode 2 on the substrate surface is concave.
It has a drum-like shape that spreads toward the joint surface with A and 2B. Inside the solder 3, a plastic ball 7 wrapped in a nickel film 5 which is a solder base layer (described later) is arranged. A gap 6 is formed between the nickel film 5 and the ball 7. In the case of this embodiment, the diameter of the ball 7 is 500 μmφ, and the gap 6 between the ball and the nickel film is
Is 2-3 μm.
【0018】図1の右半分に、本実施例において、温度
変化により接続部に剪断方向の変位が加わった場合の状
態を示す。図を参照して、接続部は高さ方向中央部付近
のはんだ(図中に破線の長円Aで囲った部分)が薄く、
またボール7とニッケル膜5との間に隙間6もあるの
で、変位が4μm程度迄は、はんだ3が剪断方向に容易
に変形する。これよりも大きい変位は、モジュール基板
1および回路基板4が反ることと、回路基板4が伸びる
こととで吸収される。本発明では、はんだ3が変形する
とき変形するのは、図1中のAの部分となる。そのA部
では、図1に示すとおり、はんだが電極付近など他の部
分に比べて薄くなっている。しかも、そのはんだが薄い
部分Aは、上下方向に100μm程度の広い範囲に渡っ
ている。従って、図10に示す従来の技術による接続構
造とは異なり、基板側電極2A(図10参照)とはんだ
3との接合部分E(同)のような狭い範囲(極論すれ
ば、ただ一点)に歪みが集中することは、ない。従来例
の接続構造においては、はんだの断面形状は、電極とは
んだとの接合部分(図10中のE部)に応力集中する形
状である。そのため、はんだと電極の界面のごく狭い範
囲に応力が集中し、はんだに亀裂が生じ、繰り返し応力
が加わることで接続部に破壊が起きる。これに対し、本
実施例においては、はんだのA部に加わる最大応力を、
従来の接続構造におけるE部に比べて小さくできるの
で、変位の繰返しによって起こる亀裂の発生と進行を遅
らせ、接続部の寿命を延ばすことができる。The right half of FIG. 1 shows a state in which a displacement in the shearing direction is applied to the connection portion due to a temperature change in this embodiment. Referring to the drawing, the connection portion is thinner in the solder near the center in the height direction (portion surrounded by a long circle A in the broken line in the drawing).
Further, since there is a gap 6 between the ball 7 and the nickel film 5, the solder 3 is easily deformed in the shearing direction until the displacement is about 4 μm. Larger displacements are absorbed by the warpage of the module board 1 and the circuit board 4 and the extension of the circuit board 4. In the present invention, when the solder 3 is deformed, it is the portion A in FIG. In the part A, as shown in FIG. 1, the solder is thinner than other parts such as the vicinity of the electrode. In addition, the portion A where the solder is thin extends over a wide range of about 100 μm in the vertical direction. Therefore, unlike the connection structure according to the related art shown in FIG. 10, the connection is made in a narrow range (only one point in the extreme case) such as a joint portion E (same) between the board-side electrode 2A (see FIG. 10) and the solder 3. The distortion is not concentrated. In the connection structure of the conventional example, the cross-sectional shape of the solder is a shape in which stress concentrates on a joint (E portion in FIG. 10) between the electrode and the solder. For this reason, stress concentrates in a very narrow range of the interface between the solder and the electrode, cracks are generated in the solder, and the connection portion is broken by repeated stress. On the other hand, in this embodiment, the maximum stress applied to portion A of the solder is
Since it can be smaller than the portion E in the conventional connection structure, the generation and progress of cracks caused by repeated displacement can be delayed, and the life of the connection portion can be extended.
【0019】本発明者は、上述の実施例を、以下に述べ
る製造工程にしたがって作製した。図2に、本実施例の
製造工程を、順に示す。図2を参照して、先ず、モジュ
ール基板1を準備する(図2(a))。モジュール基板
の平面図を、図3に示す。図3を参照して、モジュール
基板1は、ガラスセラミック(線熱膨張係数6ppm/
℃)製で、一辺30mmの正方形、厚さ1mmのパッケ
ージである。電極2Aは、基板の周囲4列に配列されて
いる。電極2Aは、直径700μmφの円で、ピッチ
2.54mmで配置されている。モジュール基板1の電
極形成面とは反対の面には、隠れて見えないが、電子部
品が搭載されている。The inventor manufactured the above-described embodiment according to the following manufacturing process. FIG. 2 shows the manufacturing process of this embodiment in order. Referring to FIG. 2, first, a module substrate 1 is prepared (FIG. 2A). FIG. 3 is a plan view of the module substrate. Referring to FIG. 3, module substrate 1 is made of glass ceramic (linear thermal expansion coefficient 6 ppm /
C), a 30 mm square package with a thickness of 1 mm. The electrodes 2A are arranged in four rows around the substrate. The electrodes 2A are circles having a diameter of 700 μmφ and are arranged at a pitch of 2.54 mm. Electronic components are mounted on the surface of the module substrate 1 opposite to the surface on which the electrodes are formed, although they are hidden and invisible.
【0020】上述した工程とは別に、はんだ中に含ませ
るためのプラスチックボール7(図1参照)を用意し、
これに予めはんだめっきを施した。はんだめっきプラス
チックボールの断面図を図4に示す。ボール7は、ジビ
ニルベンゼンを500μmφの球にしたものである。こ
のジビニルベンゼン製のボール7に、3μm厚のニッケ
ル5を無電解めっきで形成した。更に、15μm厚のは
んだ3をすず鉛無電解めっきで形成して、はんだめっき
プラスチックボール10を得た。上記のニッケル膜5
は、若しこの膜5を形成せず直接ボール7にはんだめっ
きを行った場合、後の工程ではんだを溶融させたとき、
プラスチックと溶融はんだとの濡れ性が悪く、プラスチ
ックボール7がはんだ3から弾き出され所望の接続構造
を得ることができなくなるのを防ぐためのものである。
溶融はんだはニッケル膜5に十分に濡れ、しかもニッケ
ル層5が固相を保つので、ボール7ははんだに内包され
た状態を保つことができる。本発明ではこのような作用
を示す金属の層を、はんだめっきに対する下地層と定義
することにする。下地層として使用可能な金属として
は、他に、例えば銅などが知られている。尚、核となる
ジビニルベンゼン製ボール7の線熱膨張係数は、100
ppm/℃である。In addition to the above-described steps, a plastic ball 7 (see FIG. 1) to be included in solder is prepared.
This was previously subjected to solder plating. FIG. 4 shows a cross-sectional view of the solder-plated plastic ball. The ball 7 is made of divinylbenzene formed into a 500 μmφ sphere. Nickel 5 having a thickness of 3 μm was formed on the divinylbenzene ball 7 by electroless plating. Further, a solder 3 having a thickness of 15 μm was formed by electroless plating of tin and lead to obtain a solder-plated plastic ball 10. The above nickel film 5
If the ball 7 is directly plated with solder without forming the film 5, when the solder is melted in a later step,
This is to prevent the wettability between the plastic and the molten solder from being deteriorated, and prevent the plastic ball 7 from being repelled from the solder 3 to obtain a desired connection structure.
Since the molten solder is sufficiently wetted by the nickel film 5 and the nickel layer 5 keeps a solid phase, the state in which the ball 7 is included in the solder can be maintained. In the present invention, a metal layer exhibiting such an action is defined as an underlayer for solder plating. Other metals that can be used as the underlayer include, for example, copper and the like. The coefficient of linear thermal expansion of the core divinylbenzene ball 7 is 100
ppm / ° C.
【0021】次に、モジュール基板面の電極2A上に、
すず鉛共晶はんだペーストを供給した。はんだペースト
の供給は、600μmφの穴を持つ0.2mm厚のメタ
ルマスクを用いたスクリーン印刷に依った。更に前述の
はんだめっきプラスチックボール10を治具を用いてそ
れぞれの電極上に載置し、230℃でリフローして、モ
ジュール基板1にボール7を持つはんだ突起11を形成
した(図2(b))。形成されたはんだ突起11の断面
図を、図5に示す。Next, on the electrode 2A on the module substrate surface,
A tin-lead eutectic solder paste was supplied. The solder paste was supplied by screen printing using a 0.2 mm thick metal mask having a hole of 600 μmφ. Further, the above-mentioned solder-plated plastic balls 10 were mounted on the respective electrodes using a jig, and reflowed at 230 ° C. to form solder protrusions 11 having the balls 7 on the module substrate 1 (FIG. 2B). ). FIG. 5 shows a cross-sectional view of the formed solder protrusion 11.
【0022】これまでの工程とは別に、回路基板4上の
電極2B(図2(c))にも、予めすず鉛共晶はんだペ
ースト9を供給した(図2(d))。はんだペーストの
供給は、モジュール基板におけると同様の、メタルマス
クを用いたスクリーン印刷に依った。尚、回路基板4
は、厚さ1mm、1辺100mmの正方形のFR−4ガ
ラスエポキシ製(線熱膨張係数=15ppm/℃)であ
る。モジュール基板1の電極2Aに対応する位置に電極
2Bが形成されている。Separately from the above steps, a tin-lead eutectic solder paste 9 was also supplied to the electrode 2B (FIG. 2C) on the circuit board 4 in advance (FIG. 2D). The solder paste was supplied by screen printing using a metal mask as in the module substrate. The circuit board 4
Is a 1 mm thick, 100 mm square, FR-4 glass epoxy square (linear thermal expansion coefficient = 15 ppm / ° C.). An electrode 2B is formed on the module substrate 1 at a position corresponding to the electrode 2A.
【0023】次いで、モジュール基板1を回路基板4の
電極2Bに位置合せして載せ、230℃ではんだリフロ
ーを行って、二つの基板1,4を接続した(図2
(e))。Next, the module substrate 1 is placed on the electrode 2B of the circuit substrate 4 while being positioned, and solder reflow is performed at 230 ° C. to connect the two substrates 1 and 4 (FIG. 2).
(E)).
【0024】上記はんだリフロー終了後の接続部の断面
図を、図3中のGの部分について、図1に示す。リフロ
ー後の冷却過程でプラスチックボール7が収縮し、プラ
スチックボール7とニッケル膜5の界面で剥離が起こ
る。冷却が終了したときには、ボール7とニッケル膜5
との間に、両者の熱膨張率の違いから、平均して2〜3
μmの隙間6ができる。はんだの融点が下がったり、プ
ラスチックボールの熱膨張率が小さくなると隙間6も小
さくなるので、はんだ3の融点は183℃以上、ボール
7の線熱膨張係数は100ppm/℃以上であること
が、望ましい。FIG. 1 shows a cross-sectional view of the connection portion after the completion of the solder reflow, with respect to the portion G in FIG. During the cooling process after the reflow, the plastic ball 7 contracts, and separation occurs at the interface between the plastic ball 7 and the nickel film 5. When the cooling is completed, the ball 7 and the nickel film 5
Between 2 and 3 on average from the difference in the coefficient of thermal expansion between the two.
A gap 6 of μm is formed. When the melting point of the solder decreases or the thermal expansion coefficient of the plastic ball decreases, the gap 6 also decreases. Therefore, the melting point of the solder 3 is preferably 183 ° C. or more, and the linear thermal expansion coefficient of the ball 7 is preferably 100 ppm / ° C. or more. .
【0025】本発明による接続構造では、接続部のはん
だ3にプラスチックボール7が内包され、モジュール基
板1と回路基板4との間隔は常に一定となるので、はん
だ量を適正に制御することによって、図1に示したよう
な鼓状の接続部形状を、安定して得ることができる。は
んだの内部にボール7がない場合は必ず、モジュールの
重さと溶融したはんだの表面張力とが釣り合った、太鼓
形となる。これに対し本発明による接続構造では、はん
だが溶けた場合には接続部の高さはボール7の直径とな
る。この形状から計算される量よりもはんだ供給量を多
くしなければ、図1に示したとおりの、ボール周辺部で
くびれた構造を安定して得ることができる。In the connection structure according to the present invention, the plastic ball 7 is included in the solder 3 of the connection portion, and the interval between the module substrate 1 and the circuit board 4 is always constant. Therefore, by appropriately controlling the amount of solder, A drum-shaped connecting portion shape as shown in FIG. 1 can be stably obtained. When there is no ball 7 inside the solder, a drum-like shape is obtained in which the weight of the module and the surface tension of the molten solder are balanced. On the other hand, in the connection structure according to the present invention, the height of the connection portion becomes the diameter of the ball 7 when the solder is melted. If the amount of supplied solder is not larger than the amount calculated from this shape, a constricted structure around the ball as shown in FIG. 1 can be stably obtained.
【0026】本実施例による試料10個と、図10に示
した従来の構造の試料10個とに対し、冷熱サイクル試
験を施した。試験条件は、−40℃で30分保持、12
5℃30分で保持である。従来の構造の試料では300
サイクルから500サイクルで全て断線したが、本実施
例による試料では1000サイクルまで断線が起きなか
った。A cooling / heating cycle test was performed on 10 samples according to the present embodiment and 10 samples having the conventional structure shown in FIG. The test conditions were as follows: hold at −40 ° C. for 30 minutes;
Hold at 5 ° C for 30 minutes. 300 for conventional samples
All of the wires were disconnected in 500 cycles from the cycle, but in the sample according to the present example, no disconnection occurred up to 1000 cycles.
【0027】(実施例2)以下に述べる第2の実施例
(実施例2)は、接続部の断面形状および製造方法は実
施例1と同一で、モジュール基板面の電極および回路基
板面の電極の平面形状を変更した例を示すものである。
図6(a)に、モジュール基板1と回路基板4とを実施
例1と同じ方法でBGA接続したものの透視平面図を、
示す。モジュール基板1側から見た図である。又、図6
(a)中の破線の丸印で囲った部分Bについて、モジュ
ール基板の電極2Aの拡大平面図を図6(b)に、回路
基板の電極2Bの拡大平面図を図6(c)に示す。(Embodiment 2) In a second embodiment (embodiment 2) described below, the cross-sectional shape of the connecting portion and the manufacturing method are the same as those in embodiment 1, and the electrodes on the module board surface and the electrodes on the circuit board surface are used. Is an example in which the planar shape is changed.
FIG. 6A is a perspective plan view of a module board 1 and a circuit board 4 which are BGA-connected in the same manner as in the first embodiment.
Show. FIG. 3 is a diagram viewed from the module substrate 1 side. FIG.
FIG. 6B shows an enlarged plan view of the electrode 2A of the module substrate, and FIG. 6C shows an enlarged plan view of the electrode 2B of the circuit substrate, for a portion B surrounded by a broken circle in FIG. .
【0028】図6を参照して、本実施例では、各基板
1,4上の電極2A,2Bのパターンを、変位が加わる
方向に、一部引き伸ばした形状にしている。電極を引き
伸ばす方向は、はんだに引っ張り方向の応力が加わる向
きである。すなわち、モジュール基板1にあっては、基
板中心から外側に向かう方向であり(図6(b))、回
路基板にあっては、内向きに基板中心に向かう方向であ
る(図6(c))。従って、接続される電極どうしでい
えば、モジュール基板側の電極2Aと回路基板側の電極
2Bとでは、互いに逆の方向に引き伸ばされていること
になる。電極の引伸ばしの大きさは、電極の変位が加わ
る方向の幅が変位方向に垂直な方向の幅の1.2倍程度
になるような大きさにする。すなわち、電極2A,2B
の一例のパターンを示す図9(a)を参照して、電極の
引伸ばしの方向(この場合は、紙面上下方向)の最大距
離Lを、直径Wの1.2倍(L=1.2W)にする。Referring to FIG. 6, in the present embodiment, the patterns of electrodes 2A and 2B on each of substrates 1 and 4 are partially elongated in the direction in which displacement is applied. The direction in which the electrodes are stretched is the direction in which the tensile stress is applied to the solder. That is, in the module substrate 1, the direction is outward from the substrate center (FIG. 6B), and in the case of the circuit substrate, the direction is inward toward the substrate center (FIG. 6C). ). Therefore, the electrodes 2A on the module board and the electrodes 2B on the circuit board are stretched in opposite directions. The size of the extension of the electrode is set so that the width in the direction in which the displacement of the electrode is applied is about 1.2 times the width in the direction perpendicular to the displacement direction. That is, the electrodes 2A, 2B
Referring to FIG. 9A showing an example pattern, the maximum distance L in the direction in which the electrodes are stretched (in this case, the vertical direction on the paper) is set to be 1.2 times the diameter W (L = 1.2 W). ).
【0029】上述したようなパターンの電極を持つモジ
ュール基板と回路基板とを実施例1と同一の製造方法に
より接続したものについて、温度変化による応力が加わ
ったときの電極付近の断面の状態を、図7に示す。図7
は、図6(a)中の直線Fで示す部分の断面図である。
はんだ3と電極2Aとの接合部で引っ張り応力が働く部
分の接触角が、実施例1におけるよりも更に鋭角になっ
ており、はんだと電極との剥離が起き難くなっている。The state of the cross section near the electrodes when a stress due to a temperature change is applied to a module substrate having circuit electrodes having the above-mentioned pattern and a circuit board connected by the same manufacturing method as in the first embodiment is shown in FIG. As shown in FIG. FIG.
FIG. 7 is a sectional view of a portion indicated by a straight line F in FIG.
The contact angle of the portion where the tensile stress acts at the joint between the solder 3 and the electrode 2A is further acute than in the first embodiment, so that the solder and the electrode are less likely to be separated.
【0030】本実施例において、例えば製造時にはんだ
の供給量がばらつき、はんだ量が減った場合には、接続
部の断面は、図8(a)に示す形状になる。この場合
は、はんだが溶けたときに、表面張力で、引っ張り応力
が加わる部分Cにはんだが集まる。従って、引っ張り応
力が加わる部分Cには十分な量のはんだがあり、引っ張
りの力が加わってもこの部分のはんだは破断しない。一
方、はんだ供給量のばらつきではんだ量が多い場合は、
接続部の断面は、図8(b)のようになる。この場合、
応力によって変形する部分は、ボール周辺のはんだが薄
くなった部分(図8(b)のボール7の高さ方向中央部
の側面付近)であり、歪みはこの部分で吸収される。従
って、図8(b)中の破線の丸印で囲った部分Dには応
力は加わらず、この部分から破壊することはない。In the present embodiment, for example, when the supply amount of the solder is varied at the time of manufacture and the amount of the solder is reduced, the cross section of the connection portion has the shape shown in FIG. In this case, when the solder is melted, the solder collects in a portion C where a tensile stress is applied due to surface tension. Therefore, there is a sufficient amount of solder in the portion C where the tensile stress is applied, and even when a tensile force is applied, the solder in this portion does not break. On the other hand, if the amount of solder is large due to variations in the amount of solder supplied,
The cross section of the connecting portion is as shown in FIG. in this case,
The portion deformed by the stress is the portion where the solder around the ball is thinned (near the side surface at the center in the height direction of the ball 7 in FIG. 8B), and the distortion is absorbed in this portion. Therefore, no stress is applied to a portion D surrounded by a broken circle in FIG. 8B, and the portion D is not broken from this portion.
【0031】電極2A,2Bの平面形状は、はんだの表
面張力を利用してはんだの厚みを変えられるものであれ
ば、図9(a)に示す形状に特に限定されるものではな
い。例えば、図9(b)に示すような、正方形のパター
ンから小さい四角形の突起を飛び出させたパターンでも
よいし、図9(c)に示すような、半円形の突起を設け
たパターンの電極でもよい。但し、パターンによって
は、プラスチックボール7が電極の中央に来ないことが
ある。実験により、電極からの引っ張り応力方向への引
伸ばし部分(突起部分)の幅と引伸ばしの長さについ
て、BGA電極の剪断応力が加わる方向に直角な方向の
電極の幅をWとしたとき、Wの1/3以下の幅でボール
が所定の位置に固定されるのが望ましく、引伸ばし長さ
dはWの0.2倍以上であれば応力集中が起こらないの
で望ましいことが、確かめられた。The planar shape of the electrodes 2A and 2B is not particularly limited to the shape shown in FIG. 9A as long as the thickness of the solder can be changed by utilizing the surface tension of the solder. For example, a pattern in which small square protrusions are projected from a square pattern as shown in FIG. 9B, or a pattern in which semicircular protrusions are provided as shown in FIG. 9C may be used. Good. However, depending on the pattern, the plastic ball 7 may not come to the center of the electrode. According to an experiment, regarding the width of the stretched portion (projection portion) and the length of the stretch in the direction of the tensile stress from the electrode, when the width of the electrode in the direction perpendicular to the direction in which the shear stress of the BGA electrode is applied is W, It has been confirmed that it is desirable that the ball is fixed at a predetermined position with a width of 1/3 or less of W, and that if the stretch length d is 0.2 times or more of W, stress concentration does not occur, which is desirable. Was.
【0032】本実施例の電極を形成したモジュール基板
と回路基板とを実施例1と同一の製造工程で接続したも
のを試料とし、冷熱サイクル試験に供した。試験条件
は、実施例1で実施した試験の条件と、同一である。試
料の水準は、電極上にすず鉛共晶はんだペーストをスク
リーン印刷するときに用いるメタルマスクの穴の直径が
500μmのものと、700μmのものとの二水準であ
る。尚、実施例1による試料も、同一試験に供した。実
施例1による試料についても、はんだペーストスクリー
ン印刷時のメタルマスクの穴径が500μmのものと,
700μmのものとの二水準とした。試料数は、各水準
とも、10個ずつである。試験結果を以下に示す。The module substrate on which the electrodes of the present embodiment were formed and the circuit substrate were connected in the same manufacturing process as in the first embodiment, and the samples were subjected to a thermal cycle test. The test conditions are the same as those of the test performed in Example 1. The sample has two levels: a metal mask having a hole diameter of 500 μm used when screen printing a tin eutectic solder paste on an electrode, and a hole diameter of 700 μm. The sample according to Example 1 was also subjected to the same test. The sample according to Example 1 also has a metal mask having a hole diameter of 500 μm at the time of solder paste screen printing.
Two levels of 700 μm. The number of samples is 10 for each level. The test results are shown below.
【0033】[0033]
【表1】 [Table 1]
【0034】表1を参照すると、メタルマスク穴径のい
ずれの水準においても、実施例2の方が実施例1より
も、接続部の寿命が延びていることが分る。Referring to Table 1, it can be seen that, at any level of the metal mask hole diameter, the life of the connection is longer in the second embodiment than in the first embodiment.
【0035】尚、これまでの実施例は全て、LSIより
大型のモジュール基板と回路基板とを接続したものであ
るが、本発明はこれに限られるものではない。LSI程
度の大きさの部品或いは基板と他の基板との接続に適用
して、実施例におけると同様の作用効果を奏すること
は、明らかであろう。In all of the embodiments described above, a module board larger than an LSI and a circuit board are connected, but the present invention is not limited to this. It will be apparent that the present invention can be applied to the connection between a component or a substrate having a size of about an LSI and another substrate to achieve the same operation and effect as in the embodiment.
【0036】[0036]
【発明の効果】本発明は、BGA接続構造のはんだ中に
プラスチックボールを含ませ、そのプラスチックボール
の線熱膨張係数を適当に選ぶことによって、ボールとは
んだ下地層との間に隙間を作ると共に、はんだの断面形
状を、高さ方向中央部が窪んだ鼓状にしている。According to the present invention, a plastic ball is included in the solder of the BGA connection structure, and by appropriately selecting the linear thermal expansion coefficient of the plastic ball, a gap is formed between the ball and the solder underlayer. In this case, the cross-sectional shape of the solder is in the shape of a drum with a hollow central portion in the height direction.
【0037】これにより本発明によれば、熱膨張率の異
なる2枚の基板をBGAによって接続したとき、接続部
近傍に搭載された部品に加わる歪みを小さくできる。温
度変化によって生じる電極の相対的なずれを、接続部に
含ませたボール周辺の隙間で吸収することにより、各々
の基板に与える歪みを小さくすることができるからであ
る。Thus, according to the present invention, when two substrates having different coefficients of thermal expansion are connected by BGA, distortion applied to components mounted near the connection portion can be reduced. This is because, by absorbing the relative displacement of the electrodes caused by the temperature change in the gap around the ball included in the connection portion, the strain applied to each substrate can be reduced.
【0038】又、しかも接続部の体積増加を伴わずに、
BGA接続部の温度サイクルに対する寿命を長くでき
る。熱膨張・収縮に対する整合層のような、接続部の体
積を増加させる特別の部品が不要でしかも、はんだの断
面形状を鼓状とすることで、接続部に剪断応力が加わっ
たとき、接続部の応力と歪みを分散させ、はんだの亀裂
発生を遅らせることができるからである。Also, without increasing the volume of the connecting portion,
The life of the BGA connection with respect to the temperature cycle can be extended. No special parts such as a matching layer for thermal expansion and contraction that increase the volume of the connection are required.Moreover, since the cross section of the solder is shaped like a drum, when a shear stress is applied to the connection, the connection This is because it is possible to disperse the stress and strain and to delay the generation of cracks in the solder.
【0039】本発明はまた、モジュール基板および回路
基板の電極の平面形状を、引っ張り応力の方向に引伸ば
された、突起を持つ形状としている。According to the present invention, the planar shapes of the electrodes of the module substrate and the circuit substrate are formed to have projections elongated in the direction of tensile stress.
【0040】これにより本発明によれば、接続部の寿命
が電極へのはんだ供給量のばらつきに左右されないよう
にできる。電極の形状を引っ張り応力が加わる方向に広
げておくことで、はんだの断面形状を、はんだ供給量が
増えても応力が集中しないような形状とし、また供給量
が減った場合でも、応力がもっとも強く加わる部分のは
んだの厚みが確保されるようにしているからである。Thus, according to the present invention, it is possible to prevent the life of the connection portion from being affected by the variation in the amount of solder supplied to the electrodes. By expanding the shape of the electrode in the direction in which tensile stress is applied, the cross-sectional shape of the solder is such that the stress does not concentrate even if the amount of supplied solder increases, and even if the amount of supplied solder decreases, the stress will be the most. This is because the thickness of the solder to be applied strongly is ensured.
【0041】本発明は、LSIより大型の部品或いはモ
ジュール基板と回路基板とをBGAで接続する場合に適
用して、特に顕著な効果を示す。The present invention has a particularly remarkable effect when applied to a case where a component or module board larger than an LSI or a circuit board is connected by a BGA.
【図1】本発明の実施例1における接続部の断面図であ
る。FIG. 1 is a sectional view of a connecting portion according to a first embodiment of the present invention.
【図2】実施例1の製造工程を、順に示す図である。FIGS. 2A and 2B are diagrams sequentially illustrating the manufacturing process of Example 1. FIGS.
【図3】実施例1に用いたモジュール基板の平面図であ
る。FIG. 3 is a plan view of a module substrate used in Example 1.
【図4】実施例1に用いたはんだめっきプラスチックボ
ールの断面図である。FIG. 4 is a sectional view of a solder-plated plastic ball used in Example 1.
【図5】実施例1における、モジュール基板の電極上に
形成されたプラスチックボールを含むはんだ突起の断面
図である。FIG. 5 is a cross-sectional view of a solder protrusion including a plastic ball formed on an electrode of a module substrate in the first embodiment.
【図6】実施例2のモジュール基板と回路基板を実装し
たものの透視平面図、モジュール基板上の電極の拡大平
面図および、回路基板上の電極の拡大平面図である。FIG. 6 is a perspective plan view of a module board and a circuit board of Example 2 mounted thereon, an enlarged plan view of an electrode on the module board, and an enlarged plan view of an electrode on the circuit board.
【図7】実施例2における接続部の断面図である。FIG. 7 is a cross-sectional view of a connection portion according to the second embodiment.
【図8】実施例2において、はんだが少ない場合の接続
部の断面図および、はんだが多い場合の断面図である。8A and 8B are a cross-sectional view of a connection part when the amount of solder is small and a cross-sectional view when a lot of solder is used in the second embodiment.
【図9】実施例2における電極の平面形状の他の例を示
す平面図である。FIG. 9 is a plan view showing another example of the planar shape of the electrode in the second embodiment.
【図10】従来の技術によるBGA接続構造の一例の断
面図である。FIG. 10 is a cross-sectional view of an example of a conventional BGA connection structure.
【図11】従来の技術によるBGA接続構造の他の例の
断面図である。FIG. 11 is a cross-sectional view of another example of a BGA connection structure according to the related art.
【図12】従来の技術によるBGA接続構造の更に他の
例の断面図である。FIG. 12 is a sectional view of still another example of the BGA connection structure according to the related art.
1 モジュール基板 2A,2B 電極 3 はんだ 4 回路基板 5 ニッケル膜 6 隙間 7 プラスチックボール 9 はんだペースト 10 はんだめっきプラスチックボール 11 はんだ突起 DESCRIPTION OF SYMBOLS 1 Module board 2A, 2B electrode 3 Solder 4 Circuit board 5 Nickel film 6 Gap 7 Plastic ball 9 Solder paste 10 Solder plating plastic ball 11 Solder projection
Claims (5)
モジュール基板に設けられた電極とこれに接続すべき回
路基板面上の電極とをはんだによりBGA接続したBG
A接続構造において、 BGA接続構造のはんだ内部に、はんだに対する下地層
に覆われたプラスチックからなる核を含ませ、その核と
これを覆う前記下地層との界面に隙間を設けたことを特
徴とするBGA接続構造。1. A BG in which electrodes provided on an electronic component or a module substrate on which a plurality of electronic components are mounted and electrodes on a circuit board surface to be connected to the electrodes are BGA-connected by soldering.
In the A connection structure, a nucleus made of plastic covered with an underlayer for the solder is included in the solder of the BGA connection structure, and a gap is provided at an interface between the nucleus and the underlayer covering the nucleus. BGA connection structure.
ことを特徴とする、請求項1に記載のBGA接続構造。2. The BGA connection structure according to claim 1, wherein the melting point of the solder is 183 ° C. or higher.
り、前記核は線熱膨張係数が100ppm/℃以上であ
ることを特徴とする、請求項1又は請求項2に記載のB
GA接続構造。3. The B according to claim 1, wherein the underlayer covering the nucleus is a nickel film, and the nucleus has a linear thermal expansion coefficient of 100 ppm / ° C. or more.
GA connection structure.
断応力が加わる方向に延びる突起状電極を付け加えたこ
とを特徴とする、請求項1乃至3のいずれかに記載のB
GA接続構造。4. A B-type electrode according to claim 1, wherein a protruding electrode extending in a direction in which a shear stress is applied is added to a pair of electrodes connected by the BGA connection.
GA connection structure.
力が加わる方向に直角な方向の距離をWとしたとき、幅
がWの1/3以下で、長さがWの0.2倍以上であるこ
とを特徴とする、請求項4に記載のBGA接続構造。5. The protruding electrode has a width of not more than 1/3 of W and a length of 0.2 W of W when a distance in a direction perpendicular to a direction in which shear stress of the original electrode is applied is W. The BGA connection structure according to claim 4, wherein the BGA connection structure is twice or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9149240A JP2856197B2 (en) | 1997-06-06 | 1997-06-06 | BGA connection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9149240A JP2856197B2 (en) | 1997-06-06 | 1997-06-06 | BGA connection structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10340980A true JPH10340980A (en) | 1998-12-22 |
| JP2856197B2 JP2856197B2 (en) | 1999-02-10 |
Family
ID=15470954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9149240A Expired - Fee Related JP2856197B2 (en) | 1997-06-06 | 1997-06-06 | BGA connection structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2856197B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105980086A (en) * | 2014-02-04 | 2016-09-28 | 千住金属工业株式会社 | Ni ball, ni core ball, solder joint, solder paste, and solder foam |
| JP2016188773A (en) * | 2015-03-30 | 2016-11-04 | 日立金属株式会社 | Magnetic sensor, magnetic encoder using the same, lens barrel and camera |
| US20230067845A1 (en) * | 2021-08-30 | 2023-03-02 | International Business Machines Corporation | Creating a standoff for a low-profile component without adding a process step |
-
1997
- 1997-06-06 JP JP9149240A patent/JP2856197B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105980086A (en) * | 2014-02-04 | 2016-09-28 | 千住金属工业株式会社 | Ni ball, ni core ball, solder joint, solder paste, and solder foam |
| CN105980086B (en) * | 2014-02-04 | 2017-07-21 | 千住金属工业株式会社 | Ni balls, Ni cores ball, soldered fitting, soldering paste and shaping solder |
| JP2016188773A (en) * | 2015-03-30 | 2016-11-04 | 日立金属株式会社 | Magnetic sensor, magnetic encoder using the same, lens barrel and camera |
| US20230067845A1 (en) * | 2021-08-30 | 2023-03-02 | International Business Machines Corporation | Creating a standoff for a low-profile component without adding a process step |
| US11812562B2 (en) * | 2021-08-30 | 2023-11-07 | International Business Machines Corporation | Creating a standoff for a low-profile component without adding a process step |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2856197B2 (en) | 1999-02-10 |
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