JPH1038988A - Integrated magnetoresistive element circuit - Google Patents
Integrated magnetoresistive element circuitInfo
- Publication number
- JPH1038988A JPH1038988A JP8200566A JP20056696A JPH1038988A JP H1038988 A JPH1038988 A JP H1038988A JP 8200566 A JP8200566 A JP 8200566A JP 20056696 A JP20056696 A JP 20056696A JP H1038988 A JPH1038988 A JP H1038988A
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- Prior art keywords
- voltage
- magnetoresistive element
- magnetoresistive
- terminal
- circuit
- Prior art date
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- 230000000694 effects Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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Abstract
(57)【要約】
【課題】 磁気抵抗効果素子がばらついた場合でも、磁
気抵抗効果素子の抵抗変化を出力できる集積化磁気抵抗
効果素子回路を提供する。
【解決手段】 磁気抵抗効果素子11,14は、同一の
磁界変化を検知し磁界変化によって抵抗値が変化し、磁
気抵抗効果素子12は、異なる磁界変化を検知し磁界変
化によって磁気抵抗効果素子11,14の抵抗値の変化
とは逆相に抵抗値が変化し、電流ミラー回路は、磁気抵
抗効果素子11,14の他端が電流入力端に接続され磁
気抵抗効果素子12の他端が電流出力端に接続され共通
端子が直流電源10の他端に接続され磁気抵抗効果素子
11,12,14に等しい電流を流すと共に磁気抵抗効
果素子11の両端電圧を抵抗変化に対して微小に変化さ
せ、コンパレータ19は、磁気抵抗効果素子14の他端
の電圧と磁気抵抗効果素子12の他端の電圧とを比較す
る。
(57) [Problem] To provide an integrated magnetoresistive element circuit capable of outputting a resistance change of the magnetoresistive element even when the magnetoresistive element varies. SOLUTION: Magnetoresistive elements 11 and 14 detect the same magnetic field change, and the resistance value changes according to the magnetic field change. , 14 change in resistance in a phase opposite to that of the change in resistance, the current mirror circuit is configured such that the other ends of the magnetoresistive elements 11 and 14 are connected to a current input end and the other end of the magnetoresistive element 12 The common terminal is connected to the output terminal, the common terminal is connected to the other end of the DC power supply 10, and the same current flows through the magnetoresistive elements 11, 12, and 14, and the voltage across the magnetoresistive element 11 is slightly changed with respect to the resistance change. The comparator 19 compares the voltage at the other end of the magnetoresistive element 14 with the voltage at the other end of the magnetoresistive element 12.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、集積化磁気抵抗効
果素子回路に関し、特に、磁気抵抗効果素子に製造ばら
つきがあった場合でも、抵抗変化を出力できる回路構成
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an integrated magnetoresistive element circuit, and more particularly, to a circuit configuration capable of outputting a resistance change even when a magnetoresistive element has manufacturing variations.
【0002】[0002]
【従来の技術】磁気抵抗効果素子は磁界の変化により抵
抗が変化するものであり、例えば、この磁気抵抗効果素
子を歯車とバイアス磁石との間に配置し、歯車が回転す
ると、バイアス磁石の磁界が磁気抵抗効果素子で変化す
るため、磁気抵抗効果素子の抵抗値が変化する。2. Description of the Related Art A magnetoresistive element changes its resistance by a change in a magnetic field. For example, this magnetoresistive element is disposed between a gear and a bias magnet. Changes in the magnetoresistive element, so that the resistance value of the magnetoresistive element changes.
【0003】この抵抗の変化を検出出力電圧として取り
出すことで歯車の回転数を検出することができる。この
場合、磁気抵抗効果素子を含む集積化磁気抵抗効果素子
回路を用いて歯車の回転数を検出する。この種の集積化
磁気抵抗効果素子回路としては、例えば、特開平4−2
36382号公報に記載されたものがある。By taking out the change in the resistance as a detection output voltage, the rotation speed of the gear can be detected. In this case, the rotation speed of the gear is detected using an integrated magnetoresistive element circuit including the magnetoresistive element. As this kind of integrated magnetoresistive element circuit, for example, Japanese Unexamined Patent Publication No.
There is one described in Japanese Patent No. 36382.
【0004】図11に前記公報に記載された集積化磁気
抵抗効果素子回路を示す。図11に示す集積化磁気抵抗
効果素子回路は、直流電源10の一端にそれぞれ一端が
接続される磁気抵抗効果素子11,13と、磁気抵抗効
果素子11,13の他端にコレクタが接続されかつエミ
ッタが直流電源10の他端に接続されるトランジスタ1
5,17からなる電流ミラー回路と、磁気抵抗効果素子
11の他端の電圧と磁気抵抗効果素子13の他端の電圧
とを比較するコンパレータ19とから構成される。FIG. 11 shows an integrated magnetoresistive element circuit described in the above publication. The integrated magnetoresistive element circuit shown in FIG. 11 has magnetoresistive elements 11 and 13 each having one end connected to one end of DC power supply 10, collectors connected to the other ends of magnetoresistive elements 11 and 13, and Transistor 1 whose emitter is connected to the other end of DC power supply 10
It comprises a current mirror circuit composed of 5 and 17 and a comparator 19 for comparing the voltage at the other end of the magnetoresistive element 11 with the voltage at the other end of the magnetoresistive element 13.
【0005】この集積化磁気抵抗効果素子回路におい
て、まず、直流電源10から磁気抵抗効果素子11,1
3に電流が流れると、磁気抵抗効果素子11,13は、
それぞれ異なった磁界を検知し、それぞれ抵抗値が異な
って変化する。In this integrated magnetoresistive element circuit, first, a DC power supply 10 supplies the magnetoresistive elements 11, 1
3, when the current flows, the magnetoresistive effect elements 11 and 13
Different magnetic fields are detected, and the resistance values change differently.
【0006】そして、電流ミラー回路のトランジスタ1
5,17は、磁気抵抗効果素子11,13に流れる電流
を等しくなるようにする。このため、磁気抵抗効果素子
11,13の両端の電圧降下が異なる。The transistor 1 of the current mirror circuit
5 and 17 make the current flowing through the magnetoresistive elements 11 and 13 equal. For this reason, the voltage drop between both ends of the magnetoresistive elements 11 and 13 is different.
【0007】さらに、磁気抵抗効果素子11の他端にお
ける電圧V11と磁気抵抗効果素子13の他端における
電圧V12とをコンパレータ19で比較し、検出出力と
して取り出す。Further, a voltage V11 at the other end of the magnetoresistive effect element 11 and a voltage V12 at the other end of the magnetoresistive effect element 13 are compared by a comparator 19 and taken out as a detection output.
【0008】この場合、トランジスタ15のベース−コ
レクタ間が直結接続されているので、図12(a)に示
すように、電圧V11(入力電圧)の時間的な変化は小
さいが、電圧V12(入力電圧)の時間的な変化は大き
い。In this case, since the base and the collector of the transistor 15 are directly connected, as shown in FIG. 12A, the temporal change of the voltage V11 (input voltage) is small, but the voltage V12 (input voltage) is small. The change over time of the voltage is large.
【0009】また、磁気抵抗効果素子11,13の抵抗
値が磁界をかけない状態で、ほぼ同一の抵抗値をもつの
で、図12(a)に示すように、電圧V12と電圧V1
1とが交差し、かつ、電圧V12は、電圧V11に対し
て上下にほぼ同一振幅だけ変動する。Further, since the resistances of the magnetoresistive elements 11 and 13 have substantially the same resistance in a state where no magnetic field is applied, as shown in FIG.
1 intersects, and the voltage V12 fluctuates up and down with respect to the voltage V11 by almost the same amplitude.
【0010】これにより、図12(b)に示すように、
電圧V12と電圧V11とが交差する時刻で、かつ電圧
V11が電圧V12よりも大きい期間中に出力電圧V0
が得られる。As a result, as shown in FIG.
At the time when the voltage V12 and the voltage V11 cross, and during the period when the voltage V11 is higher than the voltage V12, the output voltage V0
Is obtained.
【0011】[0011]
【発明が解決しようとする課題】しかしながら、従来の
集積化磁気抵抗効果素子回路にあっては、磁気抵抗効果
素子11,13の抵抗値や抵抗変化率がばらついた場合
には、図13(a)に示すように、電圧V11と電圧V
12とが完全に離れてしまい、交差しなくなったりす
る。However, in the case of the conventional integrated magnetoresistive element circuit, if the resistance values and the resistance change rates of the magnetoresistive elements 11 and 13 vary, FIG. ), The voltage V11 and the voltage V
12 are completely separated from each other and no longer intersect.
【0012】このような場合には、図13(b)に示す
ように、出力電圧V0が得られず、例えば、歯車の回転
数を検出することができなくなる。In such a case, as shown in FIG. 13 (b), the output voltage V0 cannot be obtained, and for example, the rotation speed of the gear cannot be detected.
【0013】本発明の目的は、磁気抵抗効果素子がばら
ついた場合でも、磁気抵抗効果素子の抵抗変化を出力で
きる集積化磁気抵抗効果素子回路を提供することにあ
る。An object of the present invention is to provide an integrated magnetoresistive element circuit capable of outputting a change in resistance of the magnetoresistive element even when the magnetoresistive element varies.
【0014】[0014]
【課題を解決するための手段】本発明の集積化磁気抵抗
効果素子回路は前記課題を解決するために以下の手段を
採用した。請求項1の発明は、一端が直流電源の一端に
接続されそれぞれが同一の磁界変化を検知しその磁界変
化によって抵抗値が変化する第1及び第2の磁気抵抗効
果素子と、この第1及び第2の磁気抵抗効果素子とは異
なる磁界変化を検知しその磁界変化によって前記第1及
び第2の磁気抵抗効果素子の抵抗値の変化とは逆相に抵
抗値が変化する第3の磁気抵抗効果素子と、第1及び第
2の磁気抵抗効果素子の他端が電流入力端に接続され、
第3の磁気抵抗効果素子の他端が電流出力端に接続さ
れ、共通端子が直流電源の他端に接続され、第1乃至第
3の磁気抵抗効果素子に等しい電流を流すと共に、第1
の磁気抵抗効果素子の両端電圧を抵抗変化に対して微小
に変化させる電流ミラー回路と、第2の磁気抵抗効果素
子の他端の電圧と第3の磁気抵抗効果素子の他端の電圧
とを比較する比較回路とを備えることを要旨とする。Means for Solving the Problems The integrated magnetoresistive element circuit of the present invention employs the following means to solve the above problems. According to the first aspect of the present invention, there are provided first and second magnetoresistive elements each having one end connected to one end of a DC power supply, each of which detects the same magnetic field change and whose resistance value changes by the magnetic field change; A third magnetic resistance in which a change in a magnetic field different from that of the second magnetoresistive element is detected, and the change in the magnetic field changes the resistance in a phase opposite to the change in the resistance of the first and second magnetoresistive elements. The other end of the effect element and the first and second magnetoresistive elements are connected to a current input end,
The other end of the third magnetoresistive element is connected to the current output terminal, the common terminal is connected to the other end of the DC power supply, and an equal current flows through the first to third magnetoresistive elements.
A current mirror circuit for slightly changing the voltage between both ends of the magnetoresistive element with respect to the resistance change, and the voltage at the other end of the second magnetoresistive element and the voltage at the other end of the third magnetoresistive element. The gist is to provide a comparison circuit for comparison.
【0015】この発明によれば、第1及び第2の磁気抵
抗効果素子の抵抗値は同一の磁界変化により同一値で変
化する。また、第3の磁気抵抗効果素子の抵抗値は異な
る磁界によって第1及び第2の磁気抵抗効果素子の抵抗
値とは逆相で変化する。According to the present invention, the resistance values of the first and second magnetoresistive elements change at the same value by the same magnetic field change. Further, the resistance value of the third magnetoresistive element changes in a phase opposite to that of the first and second magnetoresistive elements due to different magnetic fields.
【0016】そして、電流ミラー回路が第1乃至第3の
磁気抵抗効果素子に同一の電流を流すと、第1の磁気抵
抗効果素子の両端電圧が微小に変化し、第2の磁気抵抗
効果素子の他端の電圧は、第1の磁気抵抗効果素子の電
圧と同相であって、かつその電圧よりも大きい電圧とな
る。When the current mirror circuit causes the same current to flow through the first to third magnetoresistive elements, the voltage across the first magnetoresistive element changes slightly, and the second magnetoresistive element changes. Is in phase with the voltage of the first magnetoresistive element and is higher than that voltage.
【0017】また、第3の磁気抵抗効果素子の他端の電
圧は第2の磁気抵抗効果素子の他端の電圧とは逆相の電
圧となる。そして、比較回路は、第3の磁気抵抗効果素
子の他端の電圧と第2の磁気抵抗効果素子の他端の電圧
とを比較する。The voltage at the other end of the third magneto-resistance effect element has a phase opposite to the voltage at the other end of the second magneto-resistance effect element. Then, the comparison circuit compares the voltage at the other end of the third magnetoresistive element with the voltage at the other end of the second magnetoresistive element.
【0018】すなわち、第3の磁気抵抗効果素子の他端
の電圧は第2の磁気抵抗効果素子の他端の電圧とは逆相
の関係にあり、かつ、第2の磁気抵抗効果素子の他端の
電圧が比較的大きい電圧であるので、磁気抵抗効果素子
がばらついても、第2の磁気抵抗効果素子の他端の電圧
に対して第3の磁気抵抗効果素子の他端の電圧が交差す
るようになり、比較回路は、出力信号を出力する。That is, the voltage at the other end of the third magnetoresistive element has a phase opposite to that of the voltage at the other end of the second magnetoresistive element, and the voltage at the other end of the second magnetoresistive element is Since the voltage at the end is a relatively large voltage, the voltage at the other end of the third magnetoresistive element crosses the voltage at the other end of the second magnetoresistive element even if the magnetoresistive element varies. The comparison circuit outputs an output signal.
【0019】従って、磁気抵抗効果素子の抵抗値または
抵抗率がばらついた場合でも、安定した出力信号が得ら
れる。Therefore, a stable output signal can be obtained even when the resistance or resistivity of the magnetoresistive element varies.
【0020】請求項2の発明において、前記電流ミラー
回路は、第1の電流入力端にコレクタ及びベースが接続
された第1のトランジスタと、第2の電流入力端にベー
スが接続された第2のトランジスタと、電流出力端にコ
レクタが接続され、第1のトランジスタのベースにベー
スが接続され、第1及び第2のトランジスタのエミッタ
にエミッタが接続される第3のトランジスタとを有する
ことを要旨とする。According to a second aspect of the present invention, the current mirror circuit includes a first transistor having a collector and a base connected to a first current input terminal and a second transistor having a base connected to a second current input terminal. And a third transistor having a collector connected to the current output terminal, a base connected to the base of the first transistor, and an emitter connected to the emitters of the first and second transistors. And
【0021】この発明によれば、第1のトランジスタは
第1の電流入力端にコレクタ及びベースが接続されてい
るので、第1の磁気抵抗効果素子の他端の電圧は振幅の
小さい電圧となり、第2のトランジスタは第2の電流入
力端にベースのみが接続されているので、第2の磁気抵
抗効果素子の他端の電圧は振幅の比較的大きい電圧とな
り、この第2の磁気抵抗効果素子の他端の電圧と第3の
磁気抵抗効果素子の他端の電圧とを比較回路に出力す
る。According to the present invention, since the first transistor has the collector and the base connected to the first current input terminal, the voltage at the other end of the first magnetoresistive element has a small amplitude, Since only the base of the second transistor is connected to the second current input terminal, the voltage at the other end of the second magnetoresistive element is a voltage having a relatively large amplitude. And the voltage at the other end of the third magnetoresistive element are output to the comparison circuit.
【0022】請求項3の発明は、前記第3の磁気抵抗効
果素子の他端を前記比較回路の一方の端子に接続し、前
記第2の磁気抵抗効果素子の他端と前記第3の磁気抵抗
効果素子の他端との間に直列に接続された第1の抵抗器
及び第2の抵抗器を設け、第1の抵抗器と第2の抵抗器
とを接続した中点端子を前記比較回路の他方の端子に接
続したことを要旨とする。According to a third aspect of the present invention, the other end of the third magnetoresistive element is connected to one terminal of the comparison circuit, and the other end of the second magnetoresistive element is connected to the third magnetic element. Providing a first resistor and a second resistor connected in series between the other end of the resistance effect element and comparing the midpoint terminal connecting the first resistor and the second resistor with each other; The point is that the terminal is connected to the other terminal of the circuit.
【0023】この発明によれば、第3の磁気抵抗効果素
子の他端の電圧を比較回路の一方の端子に入力し、第2
の磁気抵抗効果素子の他端の電圧と第3の磁気抵抗効果
素子の他端の電圧とを第1の抵抗器及び第2の抵抗器で
分圧し、分圧された電圧を比較回路の他方の端子に入力
し、比較回路が電圧の比較を行なうことで出力信号を得
ることもできる。According to the present invention, the voltage at the other end of the third magnetoresistive element is input to one terminal of the comparison circuit,
The voltage at the other end of the magnetoresistive element and the voltage at the other end of the third magnetoresistive element are divided by the first resistor and the second resistor, and the divided voltage is used as the other end of the comparison circuit. , And a comparison circuit compares the voltages to obtain an output signal.
【0024】請求項4の発明は、前記中点端子の電圧を
可変する可変抵抗器と、前記第3の磁気抵抗効果素子の
他端と前記比較回路の一方の端子との間に設けられ、前
記第3の磁気抵抗効果素子の他端の電圧と前記可変抵抗
器により可変された中点端子の電圧との電圧差を増幅し
てその増幅出力を前記比較回路の一方の端子に出力する
差動増幅回路とを備えることを要旨とする。According to a fourth aspect of the present invention, there is provided a variable resistor for varying a voltage at the midpoint terminal, between the other end of the third magnetoresistance effect element and one terminal of the comparison circuit, A difference that amplifies the voltage difference between the voltage at the other end of the third magnetoresistive element and the voltage at the midpoint terminal changed by the variable resistor, and outputs the amplified output to one terminal of the comparison circuit. And a dynamic amplifier circuit.
【0025】この発明によれば、可変抵抗器が、前記中
点端子の電圧を可変し、差動増幅回路が、第3の磁気抵
抗効果素子の他端の電圧と可変抵抗器により可変された
前記中点端子の電圧との電圧差を増幅してその増幅出力
を前記比較回路の一方の端子に出力するので、その増幅
出力は波形歪みを発生することなく、安定した信号処理
が行なえる。According to the present invention, the variable resistor varies the voltage at the midpoint terminal, and the differential amplifier circuit varies the voltage at the other end of the third magnetoresistive element and the variable resistor. Since the voltage difference from the voltage at the midpoint terminal is amplified and the amplified output is output to one terminal of the comparison circuit, the amplified output can perform stable signal processing without generating waveform distortion.
【0026】[0026]
【発明の実施の形態】以下、本発明の集積化磁気抵抗効
果素子回路の実施の形態を詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the integrated magnetoresistive element circuit of the present invention will be described in detail.
【0027】(実施の形態1)図1に集積化磁気抵抗効
果素子回路の実施の形態1の構成図を示す。図1におい
て、直流電源10の他端にはトランジスタ15,17,
16のエミッタが接続される。(Embodiment 1) FIG. 1 shows a configuration diagram of an integrated magnetoresistive element circuit according to Embodiment 1 of the present invention. In FIG. 1, transistors 15, 17,
Sixteen emitters are connected.
【0028】トランジスタ15のコレクタには磁界の変
化によって抵抗が変化する磁気抵抗効果素子11の他端
が接続され、トランジスタ16のコレクタには磁界の変
化によって抵抗が変化する磁気抵抗効果素子14の他端
が接続される。The other end of the magnetoresistive element 11 whose resistance changes with a change in the magnetic field is connected to the collector of the transistor 15, and the other end of the magnetoresistive element 14 whose resistance changes with a change in the magnetic field is connected to the collector of the transistor 16. The ends are connected.
【0029】トランジスタ17のコレクタには、前記磁
気抵抗効果素子11,14の磁界の変化とは異なる磁界
の変化によって抵抗が変化する磁気抵抗効果素子12の
他端が接続される。The other end of the magnetoresistive element 12 whose resistance changes due to a change in the magnetic field different from the change in the magnetic field of the magnetoresistive elements 11 and 14 is connected to the collector of the transistor 17.
【0030】磁気抵抗効果素子11,12,14は、図
3に示すように、絶縁基板8に設けられ、この絶縁基板
8は、歯車21とバイアス磁石23との間に配置され
る。As shown in FIG. 3, the magnetoresistive elements 11, 12, and 14 are provided on an insulating substrate 8, and the insulating substrate 8 is disposed between the gear 21 and the bias magnet 23.
【0031】磁気抵抗効果素子11,14は、図4に示
すように、同一方向に配置され、かつ、バイアス磁石2
3から同一の磁界がかけられるので、抵抗の変化が同一
となる。図5に磁気抵抗効果素子11,14のMRパタ
ーン110を示した。As shown in FIG. 4, the magnetoresistive elements 11 and 14 are arranged in the same direction, and
Since the same magnetic field is applied from 3, the change in resistance becomes the same. FIG. 5 shows the MR patterns 110 of the magnetoresistive elements 11 and 14.
【0032】一方、磁気抵抗効果素子12は、図4に示
すように、磁気抵抗効果素子11,14の方向と直交す
る方向に配置され、かつ、バイアス磁石23から同一の
磁界がかけられるので、磁気抵抗効果素子12の抵抗値
の変化は、磁気抵抗効果素子11,14の抵抗値の変化
とは逆相の関係にある。On the other hand, as shown in FIG. 4, the magnetoresistive element 12 is arranged in a direction perpendicular to the directions of the magnetoresistive elements 11 and 14, and the same magnetic field is applied from the bias magnet 23. The change in the resistance value of the magnetoresistive element 12 has an opposite phase to the change in the resistance value of the magnetoresistive elements 11 and 14.
【0033】トランジスタ15,16,17のそれぞれ
のベースは、相互に接続される。トランジスタ15のコ
レクタ−ベース間は、直結接続されている。このため、
磁気抵抗効果素子11の他端の電圧は、エミッタ−コレ
クタ間の電圧によって決定され、振幅の小さい電圧波形
となる。前記トランジスタ15,16,17とで電流ミ
ラー回路を構成する。The bases of the transistors 15, 16, 17 are connected to each other. The collector and the base of the transistor 15 are directly connected. For this reason,
The voltage at the other end of the magnetoresistive element 11 is determined by the voltage between the emitter and the collector, and has a voltage waveform with a small amplitude. The transistors 15, 16, and 17 form a current mirror circuit.
【0034】トランジスタ15,16,17は、磁気抵
抗効果素子11,12,14に等しい電流が流れるよう
に動作する。The transistors 15, 16, and 17 operate so that the same current flows through the magnetoresistive elements 11, 12, and 14.
【0035】磁気抵抗効果素子12の他端における電圧
V1は入力電圧としてコンパレータ19の非反転入力端
子(+)に入力される。磁気抵抗効果素子14の他端に
おける電圧V2は入力電圧としてコンパレータ19の反
転入力端子(−)に入力される。The voltage V1 at the other end of the magnetoresistive element 12 is input to the non-inverting input terminal (+) of the comparator 19 as an input voltage. The voltage V2 at the other end of the magnetoresistive element 14 is input to the inverting input terminal (-) of the comparator 19 as an input voltage.
【0036】コンパレータ19は、電圧V1と電圧V2
とが交差する時刻で、かつ電圧V1が電圧V2よりも大
きい期間中に出力電圧V0を出力する。The comparator 19 has a voltage V1 and a voltage V2.
And outputs the output voltage V0 at the time when the voltage V1 crosses and during the period when the voltage V1 is higher than the voltage V2.
【0037】次に、このように構成された集積化磁気抵
抗効果素子回路の実施の形態1の動作を図面を参照して
説明する。Next, the operation of the first embodiment of the integrated magnetoresistive element circuit configured as described above will be described with reference to the drawings.
【0038】まず、直流電源10からトランジスタ15
を通して磁気抵抗効果素子11に電流が流れ、トランジ
スタ16を通して磁気抵抗効果素子14に電流が流れ、
トランジスタ17を通して磁気抵抗効果素子12に電流
が流れる。First, the DC power supply 10 supplies the transistor 15
Through the transistor 16, a current flows through the transistor 16 to the magnetoresistive element 14,
A current flows to the magnetoresistive element 12 through the transistor 17.
【0039】この場合、トランジスタ15,16,17
は、磁気抵抗効果素子11,12,14に同一の電流を
流す。In this case, the transistors 15, 16, 17
Supplies the same current to the magnetoresistive elements 11, 12, and 14.
【0040】磁気抵抗効果素子11,14は、図2
(a)に示すように、同一の磁界の変化を検知し、同一
値で抵抗が変化する。また、磁気抵抗効果素子11の両
端電圧が微小に変化し、磁気抵抗効果素子14の他端の
電圧は、磁気抵抗効果素子11の電圧と同相であって、
かつその電圧よりも大きい電圧となる。The magnetoresistive elements 11 and 14 are shown in FIG.
As shown in (a), the same change in the magnetic field is detected, and the resistance changes at the same value. Also, the voltage across the magnetoresistive element 11 changes slightly, and the voltage at the other end of the magnetoresistive element 14 is in phase with the voltage of the magnetoresistive element 11,
In addition, the voltage becomes higher than that voltage.
【0041】磁気抵抗効果素子12は、磁気抵抗効果素
子11,14とは直交する方向に配置されている。この
ため、磁気抵抗効果素子12は、磁気抵抗効果素子1
1,14の磁界変化とは異なる磁界の変化を検知し、図
2(a)に示すように、抵抗値が磁気抵抗効果素子1
1,14の抵抗値の変化とは逆相の関係で変化する。The magnetoresistance effect element 12 is arranged in a direction orthogonal to the magnetoresistance effect elements 11 and 14. For this reason, the magnetoresistive element 12 is
2A, a change in the magnetic field different from the change in the magnetic field is detected, and as shown in FIG.
The change in the resistance values of the resistors 1 and 14 is in an opposite phase.
【0042】従って、磁気抵抗効果素子12の他端の電
圧は磁気抵抗効果素子14の他端の電圧とは逆相の電圧
となる。そして、コンパレータ19は、磁気抵抗効果素
子12の他端の電圧と磁気抵抗効果素子14の他端の電
圧とを比較する。Accordingly, the voltage at the other end of the magnetoresistive element 12 has a phase opposite to that of the voltage at the other end of the magnetoresistive element 14. Then, the comparator 19 compares the voltage at the other end of the magnetoresistive element 12 with the voltage at the other end of the magnetoresistive element 14.
【0043】すなわち、磁気抵抗効果素子12の他端の
電圧は磁気抵抗効果素子14の他端の電圧とは逆相の関
係にあり、かつ、磁気抵抗効果素子14の他端の電圧が
比較的大きい電圧であるので、磁気抵抗効果素子11,
12,14がばらついても、図2(b)に示すように、
磁気抵抗効果素子14の他端の電圧に対して磁気抵抗効
果素子12の他端の電圧が交差するようになる。That is, the voltage at the other end of the magnetoresistive element 12 has a phase opposite to that of the voltage at the other end of the magnetoresistive element 14, and the voltage at the other end of the magnetoresistive element 14 is relatively low. Since the voltage is large, the magnetoresistive element 11,
Even if 12, 14 vary, as shown in FIG.
The voltage at the other end of the magnetoresistive element 12 crosses the voltage at the other end of the magnetoresistive element 14.
【0044】その結果、図2(c)に示すように、コン
パレータ19は、電圧V1が電圧V2よりも大きい期間
中に出力電圧VOを出力する。As a result, as shown in FIG. 2C, the comparator 19 outputs the output voltage VO during a period when the voltage V1 is higher than the voltage V2.
【0045】このように、磁気抵抗効果素子11,1
2,14の抵抗値または抵抗率がばらついた場合でも、
電圧V1と電圧V2とが重なりやすくなるので、安定し
た出力信号が得られる。As described above, the magnetoresistive elements 11, 1
Even if the resistance value or resistivity of 2, 14 varies,
Since the voltage V1 and the voltage V2 tend to overlap, a stable output signal is obtained.
【0046】(実施の形態2)図6に集積化磁気抵抗効
果素子回路の実施の形態2の構成図を示す。図6に示す
実施の形態2の集積化磁気抵抗効果素子回路は、実施の
形態1の回路に対して、さらに、磁気抵抗効果素子12
の他端とコンパレータ19の反転入力端子との間に第1
の抵抗器20aを接続し、磁気抵抗効果素子14の他端
とコンパレータ19の反転入力端子との間に第2の抵抗
器20bを接続する。(Embodiment 2) FIG. 6 shows a configuration diagram of an embodiment 2 of an integrated magnetoresistive element circuit. The integrated magnetoresistive element circuit of the second embodiment shown in FIG. 6 is different from the circuit of the first embodiment in that
Between the other end of the comparator 19 and the inverting input terminal of the comparator 19.
Is connected, and a second resistor 20b is connected between the other end of the magnetoresistive element 14 and the inverting input terminal of the comparator 19.
【0047】また、コンパレータ19の反転入力端子に
コンデンサ18の一端を接続し、コンデンサ18の他端
を接地する。第1の抵抗器20aの抵抗値は第2の抵抗
器20bの抵抗値と同一値である。Further, one end of the capacitor 18 is connected to the inverting input terminal of the comparator 19, and the other end of the capacitor 18 is grounded. The resistance value of the first resistor 20a is the same as the resistance value of the second resistor 20b.
【0048】磁気抵抗効果素子14の電圧V2と磁気抵
抗効果素子12の電圧V1とを、第1の抵抗器20aと
第2の抵抗器20bとで分割した分割電圧V3が、入力
電圧としてコンパレータ19の反転入力端子に入力され
る。The divided voltage V3 obtained by dividing the voltage V2 of the magnetoresistive element 14 and the voltage V1 of the magnetoresistive element 12 by the first resistor 20a and the second resistor 20b is used as the input voltage. Is input to the inverting input terminal.
【0049】コンパレータ19は、電圧V1と電圧V3
とが交差する時刻で、かつ電圧V1が電圧V3よりも大
きい期間中に出力電圧V0を出力する。The comparator 19 has a voltage V1 and a voltage V3.
And outputs the output voltage V0 during the period when the voltage V1 crosses and the voltage V1 is higher than the voltage V3.
【0050】その他の構成は実施の形態1の構成と同一
であるので、同一部分には同一符号を付し、その詳細は
省略する。Since the other structure is the same as that of the first embodiment, the same parts are denoted by the same reference numerals and the details are omitted.
【0051】次に、このように構成された集積化磁気抵
抗効果素子回路の実施の形態2の動作を図面を参照して
説明する。Next, the operation of the second embodiment of the integrated magnetoresistive element circuit configured as described above will be described with reference to the drawings.
【0052】まず、磁気抵抗効果素子11,14は、図
7(a)に示すように、同一の磁界の変化を検知し、同
一値で抵抗が変化する。また、磁気抵抗効果素子11の
両端電圧が微小に変化し、磁気抵抗効果素子14の他端
の電圧は、磁気抵抗効果素子11の電圧と同相であっ
て、かつその電圧よりも大きい電圧となる。First, as shown in FIG. 7A, the magnetoresistive elements 11 and 14 detect the same change in the magnetic field and change the resistance at the same value. Also, the voltage across the magnetoresistive element 11 changes slightly, and the voltage at the other end of the magnetoresistive element 14 has the same phase as the voltage of the magnetoresistive element 11 and is higher than the voltage. .
【0053】磁気抵抗効果素子12は、磁気抵抗効果素
子11,14の磁界変化とは異なる磁界の変化を検知
し、図7(a)に示すように、抵抗値が磁気抵抗効果素
子11,14の抵抗値の変化とは逆相の関係で変化す
る。The magnetoresistive element 12 detects a change in the magnetic field that is different from the magnetic field change of the magnetoresistive elements 11 and 14, and as shown in FIG. Changes in a reverse phase relationship with the change in the resistance value.
【0054】従って、磁気抵抗効果素子12の他端の電
圧は磁気抵抗効果素子14の他端の電圧とは逆相の電圧
となる。Therefore, the voltage at the other end of the magnetoresistive element 12 has a phase opposite to the voltage at the other end of the magnetoresistive element 14.
【0055】さらに、第1の抵抗器20aと第2の抵抗
器20bとの抵抗値が同一であるので、中点電圧V3
は、電圧V1と電圧V2との和の半分になる。コンパレ
ータ19は、磁気抵抗効果素子12の他端の電圧V1と
中点電圧V3とを比較する。Further, since the first resistor 20a and the second resistor 20b have the same resistance value, the midpoint voltage V3
Is half the sum of the voltage V1 and the voltage V2. The comparator 19 compares the voltage V1 at the other end of the magnetoresistive element 12 with the midpoint voltage V3.
【0056】すなわち、磁気抵抗効果素子12の他端の
電圧V1は中点電圧V3とは逆相の関係にあり、かつ、
磁気抵抗効果素子14の他端の電圧が比較的大きい電圧
であるので、磁気抵抗効果素子11,12,14がばら
ついても、図7(b)に示すように、中点電圧V3に対
して磁気抵抗効果素子12の他端の電圧V1が交差する
ようになる。That is, the voltage V1 at the other end of the magnetoresistive element 12 has a phase opposite to that of the midpoint voltage V3, and
Since the voltage at the other end of the magnetoresistive element 14 is a relatively large voltage, even if the magnetoresistive elements 11, 12, and 14 vary, as shown in FIG. The voltage V1 at the other end of the magnetoresistive element 12 crosses.
【0057】その結果、図7(c)に示すように、コン
パレータ19は、電圧V1が電圧V3よりも大きい期間
中に出力電圧VOを出力する。As a result, as shown in FIG. 7C, the comparator 19 outputs the output voltage VO during a period when the voltage V1 is higher than the voltage V3.
【0058】このように、磁気抵抗効果素子11,1
2,14の抵抗値または抵抗率がばらついた場合でも、
電圧V1と電圧V3とを重なりやすくなるので、安定し
た出力信号が得られる。As described above, the magnetoresistive elements 11, 1
Even if the resistance value or resistivity of 2, 14 varies,
Since the voltage V1 and the voltage V3 tend to overlap, a stable output signal can be obtained.
【0059】(実施の形態3)図8に集積化磁気抵抗効
果素子回路の実施の形態3の構成図を示す。図8に示す
実施の形態3の集積化磁気抵抗効果素子回路は、実施の
形態2の回路に対して、さらに、第3の抵抗器20c、
可変抵抗器20d,25、差動増幅回路27を設けたこ
とを特徴とする。(Embodiment 3) FIG. 8 shows a configuration diagram of an integrated magnetoresistive element circuit according to Embodiment 3 of the present invention. The integrated magnetoresistive element circuit of the third embodiment shown in FIG. 8 is different from the circuit of the second embodiment in that a third resistor 20c,
It is characterized in that variable resistors 20d and 25 and a differential amplifier circuit 27 are provided.
【0060】第3の抵抗器20cの一端は磁気抵抗効果
素子12の他端に接続され、第3の抵抗器20cの他端
は差動増幅回路27の反転入力端子に接続される。差動
増幅回路27の反転入力端子と差動増幅器回路27の出
力端子との間には第3の抵抗器20cとの抵抗比により
帰還電圧を可変する可変抵抗器20dが接続されてい
る。One end of the third resistor 20c is connected to the other end of the magnetoresistive element 12, and the other end of the third resistor 20c is connected to the inverting input terminal of the differential amplifier 27. Between the inverting input terminal of the differential amplifier circuit 27 and the output terminal of the differential amplifier circuit 27, a variable resistor 20d that varies the feedback voltage according to the resistance ratio with the third resistor 20c is connected.
【0061】差動増幅器回路27の出力端子はコンパレ
ータ19の非反転入力端子に接続されている。可変抵抗
器25は、直流電源10の他端とトランジスタ15,1
6,17のエミッタとの間に接続され、前記中点端子の
電圧V3を可変する。The output terminal of the differential amplifier circuit 27 is connected to the non-inverting input terminal of the comparator 19. The variable resistor 25 is connected to the other end of the DC power supply 10 and the transistors 15 and 1.
6 and 17 are connected between the emitters 6 and 17 to vary the voltage V3 at the midpoint terminal.
【0062】差動増幅回路27は、磁気抵抗効果素子1
2の他端の電圧V1と前記可変抵抗器25により可変さ
れた中点端子の電圧V3との電圧差を増幅してその増幅
出力をコンパレータ19の反転入力端子に出力する。The differential amplifier circuit 27 includes the magnetoresistive element 1
2 and a voltage difference between the voltage V3 at the midpoint terminal changed by the variable resistor 25 and the amplified output is output to the inverting input terminal of the comparator 19.
【0063】その他の構成は実施の形態2の構成と同一
であるので、同一部分には同一符号を付し、その詳細は
省略する。Since other structures are the same as those of the second embodiment, the same parts are denoted by the same reference numerals and the details are omitted.
【0064】次に、このように構成された集積化磁気抵
抗効果素子回路の実施の形態3の動作を説明する。Next, the operation of the integrated magnetoresistive element circuit having the above-described configuration according to the third embodiment will be described.
【0065】まず、可変抵抗器25の抵抗値を調整しな
い場合について説明する。磁気抵抗効果素子11,14
は、図9(a)に示すように、同一値で抵抗が変化し、
磁気抵抗効果素子14の他端の電圧V2は図9(b)に
示すように、比較的振幅が小さく、磁気抵抗効果素子1
1の電圧と同相となる。First, a case where the resistance value of the variable resistor 25 is not adjusted will be described. Magnetoresistance effect elements 11 and 14
The resistance changes at the same value as shown in FIG.
The voltage V2 at the other end of the magnetoresistive element 14 has a relatively small amplitude as shown in FIG.
1 in phase.
【0066】磁気抵抗効果素子12は、抵抗値が磁気抵
抗効果素子11,14の抵抗値の変化とは逆相の関係で
変化し、その電圧V1は磁気抵抗効果素子14の他端の
電圧とは逆相の電圧となり、図9(b)に示すように、
比較的振幅が大きい。The resistance value of the magnetoresistive element 12 changes in a relationship opposite to the change in the resistance values of the magnetoresistive elements 11 and 14, and its voltage V 1 is equal to the voltage at the other end of the magnetoresistive element 14. Is a voltage of the opposite phase, and as shown in FIG.
Relatively large amplitude.
【0067】さらに、第1の抵抗器20aと第2の抵抗
器20bとの抵抗値が同一であるので、中点電圧V3
は、電圧V1と電圧V2との和の半分になり、その電圧
V3は図9(c)に示すように、比較的振幅が小さく、
差動増幅回路27の非反転入力端子に印加される。Further, since the resistance values of the first resistor 20a and the second resistor 20b are the same, the midpoint voltage V3
Is half the sum of the voltage V1 and the voltage V2, and the voltage V3 has a relatively small amplitude as shown in FIG.
It is applied to the non-inverting input terminal of the differential amplifier circuit 27.
【0068】また、電圧V1は第3の抵抗器20cを介
して差動増幅回路27の反転入力端子に印加される。差
動増幅回路27は、電圧V1と電圧V3との差電圧を増
幅し、図9(c)に示すように、振幅が大きい増幅電圧
V4をコンパレータ19に出力する。Further, the voltage V1 is applied to the inverting input terminal of the differential amplifier circuit 27 via the third resistor 20c. The differential amplifier circuit 27 amplifies the difference voltage between the voltage V1 and the voltage V3, and outputs an amplified voltage V4 having a large amplitude to the comparator 19, as shown in FIG.
【0069】コンパレータ19は、増幅電圧V4と電圧
V3とが交差する時刻で、かつ増幅電圧V4が電圧V3
よりも大きい期間中に出力信号を出力する。The comparator 19 determines that the amplified voltage V4 crosses the voltage V3 at the time when the amplified voltage V4 crosses the voltage V3.
An output signal is output during a period greater than
【0070】しかし、可変抵抗器25を調整していない
ため、増幅電圧V4に波形歪みが発生してしまい、安定
した信号処理が行なえない。However, since the variable resistor 25 is not adjusted, waveform distortion occurs in the amplified voltage V4, and stable signal processing cannot be performed.
【0071】次に、可変抵抗器25を調整した場合の各
波形を図10に示す。なお、図10(a)に示す磁気抵
抗効果素子11,12,14の抵抗の変化は図9(a)
に示すものと同じである。Next, each waveform when the variable resistor 25 is adjusted is shown in FIG. The change in the resistance of the magnetoresistive elements 11, 12, and 14 shown in FIG.
Is the same as that shown in FIG.
【0072】まず、可変抵抗器25を調整し、電圧V1
と電圧V2との中点電圧V3を直流電源10の供給電圧
Vddの半分Vdd/2付近に設定すると、増幅電圧V4
は、図10(c)に示すように、電圧V3に対して上下
に振幅がほぼ同一値となる。First, the variable resistor 25 is adjusted so that the voltage V1
When the midpoint voltage V3 between the voltage V2 and the voltage V2 is set to about Vdd / 2, which is half the supply voltage Vdd of the DC power supply 10, the amplified voltage V4
As shown in FIG. 10 (c), the amplitude becomes substantially the same in the vertical direction with respect to the voltage V3.
【0073】すなわち、増幅電圧V4の波形歪みが発生
しなくなるので、差動増幅回路27の増幅度をさらに上
げることができ、より安定した信号処理が行なえる。That is, since the waveform distortion of the amplified voltage V4 does not occur, the amplification degree of the differential amplifier circuit 27 can be further increased, and more stable signal processing can be performed.
【0074】[0074]
【発明の効果】本発明によれば、第1及び第2の磁気抵
抗効果素子の抵抗値は同一の磁界変化により同一値で変
化する。また、第3の磁気抵抗効果素子の抵抗値は異な
る磁界によって第1及び第2の磁気抵抗効果素子の抵抗
値とは逆相で変化する。According to the present invention, the resistance values of the first and second magnetoresistive elements change at the same value due to the same magnetic field change. Further, the resistance value of the third magnetoresistive element changes in a phase opposite to that of the first and second magnetoresistive elements due to different magnetic fields.
【0075】そして、電流ミラー回路が第1乃至第3の
磁気抵抗効果素子に同一の電流を流すと、第1の磁気抵
抗効果素子の両端電圧が微小に変化し、第2の磁気抵抗
効果素子の他端の電圧は、第1の磁気抵抗効果素子の電
圧と同相であって、かつその電圧よりも大きい電圧とな
る。When the current mirror circuit causes the same current to flow through the first to third magnetoresistive elements, the voltage between both ends of the first magnetoresistive element changes slightly, and the second magnetoresistive element changes. Is in phase with the voltage of the first magnetoresistive element and is higher than that voltage.
【0076】また、第3の磁気抵抗効果素子の他端の電
圧は第2の磁気抵抗効果素子の他端の電圧とは逆相の電
圧となる。そして、比較回路は、第3の磁気抵抗効果素
子の他端の電圧と第2の磁気抵抗効果素子の他端の電圧
とを比較する。The voltage at the other end of the third magneto-resistance effect element has a phase opposite to that of the voltage at the other end of the second magneto-resistance effect element. Then, the comparison circuit compares the voltage at the other end of the third magnetoresistive element with the voltage at the other end of the second magnetoresistive element.
【0077】すなわち、第3の磁気抵抗効果素子の他端
の電圧は第2の磁気抵抗効果素子の他端の電圧とは逆相
の関係にあり、かつ、第2の磁気抵抗効果素子の他端の
電圧が比較的大きい電圧であるので、磁気抵抗効果素子
がばらついても、第2の磁気抵抗効果素子の他端の電圧
に対して第3の磁気抵抗効果素子の他端の電圧が交差す
るようになり、比較回路は、出力信号を出力する。That is, the voltage at the other end of the third magnetoresistive element has a phase opposite to that of the voltage at the other end of the second magnetoresistive element, and the voltage at the other end of the second magnetoresistive element is Since the voltage at the end is a relatively large voltage, the voltage at the other end of the third magnetoresistive element crosses the voltage at the other end of the second magnetoresistive element even if the magnetoresistive element varies. The comparison circuit outputs an output signal.
【0078】従って、磁気抵抗効果素子の抵抗値または
抵抗率がばらついた場合でも、安定した出力信号が得ら
れる。Accordingly, a stable output signal can be obtained even when the resistance or resistivity of the magnetoresistive element varies.
【0079】また、第1のトランジスタは第1の電流入
力端にコレクタ及びベースが接続されているので、第1
の磁気抵抗効果素子の他端の電圧は振幅の小さい電圧と
なり、第2のトランジスタは第2の電流入力端にベース
のみが接続されているので、第2の磁気抵抗効果素子の
他端の電圧は振幅の比較的大きい電圧となり、この第2
の磁気抵抗効果素子の他端の電圧と第3の磁気抵抗効果
素子の他端の電圧とを比較回路に出力する。Since the first transistor has a collector and a base connected to the first current input terminal, the first transistor
The voltage at the other end of the magnetoresistive element is a voltage having a small amplitude, and since only the base of the second transistor is connected to the second current input terminal, the voltage at the other end of the second magnetoresistive element is Is a voltage having a relatively large amplitude.
The voltage at the other end of the magnetoresistive element and the voltage at the other end of the third magnetoresistive element are output to a comparison circuit.
【0080】また、第3の磁気抵抗効果素子の他端の電
圧を比較回路の一方の端子に入力し、第2の磁気抵抗効
果素子の他端の電圧と第3の磁気抵抗効果素子の他端の
電圧とを第1の抵抗器及び第2の抵抗器で分圧し、分圧
された電圧を比較回路の他方の端子に入力し、比較回路
が電圧の比較を行なうことで出力信号を得ることもでき
る。The voltage at the other end of the third magnetoresistive element is input to one terminal of the comparison circuit, and the voltage at the other end of the second magnetoresistive element is compared with the voltage at the other end of the third magnetoresistive element. The voltage at the end is divided by a first resistor and a second resistor, the divided voltage is input to the other terminal of the comparison circuit, and the comparison circuit compares the voltages to obtain an output signal. You can also.
【0081】また、可変抵抗器が、前記中点端子の電圧
を可変し、差動増幅回路が、第3の磁気抵抗効果素子の
他端の電圧と可変抵抗器により可変された中点端子の電
圧との電圧差を増幅してその増幅出力を前記比較回路の
一方の端子に出力するので、その増幅出力は波形歪みを
発生することなく、安定した信号処理が行なえる。Further, a variable resistor varies the voltage at the midpoint terminal, and the differential amplifier circuit varies the voltage at the other end of the third magnetoresistive element and the midpoint terminal varied by the variable resistor. Since the voltage difference from the voltage is amplified and the amplified output is output to one terminal of the comparison circuit, the amplified output can perform stable signal processing without generating waveform distortion.
【図1】本発明の集積化磁気抵抗効果素子回路の実施の
形態1の構成図である。FIG. 1 is a configuration diagram of an integrated magnetoresistive element circuit according to a first embodiment of the present invention.
【図2】実施の形態1で各磁気抵抗効果素子の抵抗値が
変化した場合のタイミングチャートである。FIG. 2 is a timing chart when a resistance value of each magnetoresistive element changes in the first embodiment.
【図3】実施の形態1の磁気抵抗効果素子の配置の一例
を示す図である。FIG. 3 is a diagram showing an example of an arrangement of a magnetoresistive element according to the first embodiment;
【図4】実施の形態1の3つの磁気抵抗効果素子の構成
例を示す図である。FIG. 4 is a diagram illustrating a configuration example of three magnetoresistive elements according to the first embodiment;
【図5】実施の形態2の2つの同一の磁気抵抗効果素子
のパータンを示す図である。FIG. 5 is a diagram showing patterns of two identical magnetoresistive elements according to the second embodiment.
【図6】本発明の集積化磁気抵抗効果素子回路の実施の
形態2の構成図である。FIG. 6 is a configuration diagram of an integrated magnetoresistive element circuit according to a second embodiment of the present invention.
【図7】実施の形態2で各磁気抵抗効果素子の抵抗値が
変化した場合のタイミングチャートである。FIG. 7 is a timing chart when a resistance value of each magnetoresistive element changes in the second embodiment.
【図8】本発明の集積化磁気抵抗効果素子回路の実施の
形態3の構成図である。FIG. 8 is a configuration diagram of an integrated magnetoresistive element circuit according to a third embodiment of the present invention.
【図9】実施の形態3で可変抵抗器を調整しない場合の
タイミングチャートである。FIG. 9 is a timing chart when the variable resistor is not adjusted in the third embodiment.
【図10】実施の形態3で可変抵抗器を調整した場合の
タイミングチャートである。FIG. 10 is a timing chart when a variable resistor is adjusted in the third embodiment.
【図11】従来の集積化磁気抵抗効果素子回路の一例を
示す図である。FIG. 11 is a diagram showing an example of a conventional integrated magnetoresistive element circuit.
【図12】従来の集積化磁気抵抗効果素子回路における
コンパレータの入出力電圧を示すタイミングチャートで
ある。FIG. 12 is a timing chart showing input / output voltages of a comparator in a conventional integrated magnetoresistive element circuit.
【図13】従来の集積化磁気抵抗効果素子回路における
磁気抵抗効果素子のばらつき時のコンパレータの入出力
電圧を示すタイミングチャートである。FIG. 13 is a timing chart showing input / output voltages of a comparator when a magnetoresistive element in a conventional integrated magnetoresistive element circuit varies.
8 絶縁基板 10 直流電源 11,12,13,14 磁気抵抗効果素子 15,16,17 トランジスタ 18 コンデンサ 19 コンパレータ 20a 第1の抵抗器 20b 第2の抵抗器 20c 第3の抵抗器 21 歯車 23 バイアス磁石 20d,25 可変抵抗器 110 MRパターン Reference Signs List 8 Insulating substrate 10 DC power supply 11, 12, 13, 14 Magnetoresistive element 15, 16, 17 Transistor 18 Capacitor 19 Comparator 20a First resistor 20b Second resistor 20c Third resistor 21 Gear 23 Bias magnet 20d, 25 Variable resistor 110 MR pattern
Claims (4)
れが同一の磁界変化を検知しその磁界変化によって抵抗
値が変化する第1及び第2の磁気抵抗効果素子と、 この第1及び第2の磁気抵抗効果素子とは異なる磁界変
化を検知しその磁界変化によって第1及び第2の磁気抵
抗効果素子の抵抗値の変化とは逆相に抵抗値が変化する
第3の磁気抵抗効果素子と、 第1及び第2の磁気抵抗効果素子の他端が電流入力端に
接続され、第3の磁気抵抗効果素子の他端が電流出力端
に接続され、共通端子が直流電源の他端に接続され、第
1乃至第3の磁気抵抗効果素子に等しい電流を流すと共
に第1の磁気抵抗効果素子の両端電圧を抵抗変化に対し
て微小に変化させる電流ミラー回路と、 第2の磁気抵抗効果素子の他端の電圧と第3の磁気抵抗
効果素子の他端の電圧とを比較する比較回路と、を備え
ることを特徴とする集積化磁気抵抗効果素子回路。1. A first and second magnetoresistive element, one end of which is connected to one end of a DC power supply, each of which detects the same magnetic field change and changes the resistance value by the magnetic field change; And a third magnetoresistive element whose resistance changes in a phase opposite to that of the first and second magnetoresistive elements due to the magnetic field change. The other ends of the first and second magnetoresistive elements are connected to a current input terminal, the other ends of the third magnetoresistive elements are connected to a current output terminal, and a common terminal is connected to the other end of the DC power supply. A current mirror circuit for causing a current equal to the first to third magnetoresistive elements to flow and for slightly changing the voltage across the first magnetoresistive element with respect to a change in resistance; and a second magnetoresistive element. Voltage at the other end of the device and the third magnetoresistive element A comparison circuit for comparing the voltage at the other end of the circuit with the other.
端にコレクタ及びベースが接続された第1のトランジス
タと、 第2の電流入力端にベースが接続された第2のトランジ
スタと、 電流出力端にコレクタが接続され、第1のトランジスタ
のベースにベースが接続され、第1及び第2のトランジ
スタのエミッタにエミッタが接続される第3のトランジ
スタと、 を有することを特徴とする請求項1記載の集積化磁気抵
抗効果素子回路。2. A current mirror circuit comprising: a first transistor having a collector and a base connected to a first current input terminal; a second transistor having a base connected to a second current input terminal; A third transistor having a collector connected to the output terminal, a base connected to the base of the first transistor, and an emitter connected to the emitters of the first and second transistors. 2. The integrated magnetoresistive element circuit according to claim 1.
記比較回路の一方の端子に接続し、前記第2の磁気抵抗
効果素子の他端と前記第3の磁気抵抗効果素子の他端と
の間に直列に接続された第1の抵抗器及び第2の抵抗器
を設け、 第1の抵抗器と第2の抵抗器とを接続した中点端子を前
記比較回路の他方の端子に接続したことを特徴とする請
求項1または請求項2記載の集積化磁気抵抗効果素子回
路。3. The other end of the third magnetoresistive element is connected to one terminal of the comparison circuit, and the other end of the second magnetoresistive element is connected to the other terminal of the third magnetoresistive element. A first resistor and a second resistor connected in series between the first and second terminals, and a midpoint terminal connecting the first resistor and the second resistor is connected to the other terminal of the comparison circuit. 3. The integrated magnetoresistive element circuit according to claim 1, wherein the integrated magnetoresistive element circuit is connected.
器と、 前記第3の磁気抵抗効果素子の他端と前記比較回路の一
方の端子との間に設けられ、前記第3の磁気抵抗効果素
子の他端の電圧と前記可変抵抗器により可変された中点
端子の電圧との電圧差を増幅してその増幅出力を前記比
較回路の一方の端子に出力する差動増幅回路と、を備え
ることを特徴とする請求項3記載の集積化磁気抵抗効果
素子回路。4. A variable resistor for varying a voltage at the midpoint terminal; and a third resistor provided between the other end of the third magnetoresistive element and one terminal of the comparison circuit. A differential amplifier circuit that amplifies the voltage difference between the voltage at the other end of the resistance element and the voltage at the midpoint terminal changed by the variable resistor, and outputs the amplified output to one terminal of the comparison circuit; The integrated magnetoresistive element circuit according to claim 3, further comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8200566A JPH1038988A (en) | 1996-07-30 | 1996-07-30 | Integrated magnetoresistive element circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8200566A JPH1038988A (en) | 1996-07-30 | 1996-07-30 | Integrated magnetoresistive element circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1038988A true JPH1038988A (en) | 1998-02-13 |
Family
ID=16426461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8200566A Pending JPH1038988A (en) | 1996-07-30 | 1996-07-30 | Integrated magnetoresistive element circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1038988A (en) |
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-
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- 1996-07-30 JP JP8200566A patent/JPH1038988A/en active Pending
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