JPH1040850A - Low vacuum atmosphere scanning electron microscope - Google Patents

Low vacuum atmosphere scanning electron microscope

Info

Publication number
JPH1040850A
JPH1040850A JP8191772A JP19177296A JPH1040850A JP H1040850 A JPH1040850 A JP H1040850A JP 8191772 A JP8191772 A JP 8191772A JP 19177296 A JP19177296 A JP 19177296A JP H1040850 A JPH1040850 A JP H1040850A
Authority
JP
Japan
Prior art keywords
chamber
electron gun
low vacuum
vacuum atmosphere
observation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8191772A
Other languages
Japanese (ja)
Inventor
Masuhiro Ito
祐博 伊東
Mitsuo Akatsu
光男 赤津
Norifumi Yukita
憲史 雪田
Hiromasa Suzuki
宏征 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Science Systems Ltd
Original Assignee
Hitachi Ltd
Hitachi Science Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Science Systems Ltd filed Critical Hitachi Ltd
Priority to JP8191772A priority Critical patent/JPH1040850A/en
Publication of JPH1040850A publication Critical patent/JPH1040850A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】 【課題】低真空雰囲気での観察で、電子銃室を高真空に
保ったまま、オリフィス径を大きくしビーム電流を大き
くする。もしくは従来と同じオリフィス径とそれを有す
る排気系の場合、低真空雰囲気での観察で、より高い試
料室圧力での観察を可能にする、または電子銃フィラメ
ントの寿命を長くする。 【解決手段】対物レンズ7と収束レンズ4,5の間に中
間室8を設け、中間室8を排気する配管を電子銃部2か
らの主配管と別に設けて排気ポンプ22の引口の近くで
接続する低真空雰囲気型走査電子顕微鏡。
[PROBLEMS] To increase an orifice diameter and increase a beam current in an observation in a low vacuum atmosphere while keeping an electron gun chamber at a high vacuum. Alternatively, in the case of an exhaust system having the same orifice diameter as that of the conventional one, observation in a low vacuum atmosphere enables observation at a higher sample chamber pressure or prolongs the life of the electron gun filament. An intermediate chamber (8) is provided between an objective lens (7) and converging lenses (4) and (5), and a pipe for exhausting the intermediate chamber (8) is provided separately from a main pipe from an electron gun section (2) and near an inlet of an exhaust pump (22). Low vacuum atmosphere type scanning electron microscope connected by.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は低真空雰囲気型走査
電子顕微鏡に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low vacuum atmosphere scanning electron microscope.

【0002】[0002]

【従来の技術】観察試料周囲雰囲気の圧力を数Pa〜数
百Paの低真空状態にすることにより、絶縁物試料の観
察で帯電現象を防止し、あるいは比較的蒸気圧の高い成
分を含んだ試料の観察を容易にする、いわゆる、低真空
観察を可能とした走査電子顕微鏡が用いられている。
2. Description of the Related Art By setting the pressure of the atmosphere around an observation sample to a low vacuum of several Pa to several hundred Pa, a charging phenomenon is prevented in the observation of an insulating sample, or a component containing a relatively high vapor pressure is contained. 2. Description of the Related Art Scanning electron microscopes that facilitate observation of a sample, that is, enable low-vacuum observation are used.

【0003】従来の低真空雰囲気型走査電子顕微鏡の排
気系は、一般に図3に示すように低真空雰囲気状態での
観察時に試料室9を低真空度に保つため中間室8あるい
は対物レンズ7にオリフィス13が設置されており、電
子銃部3及び中間室8の高真空を維持するため、電子銃
部3及び中間室8より主排気配管16で油拡散ポンプ2
1とその背圧用のロータリポンプ22に接続されてい
る。また試料室9の圧力を可変するためのニードルバル
ブ20を開いたときに試料室9を低真空度に維持するた
めのロータリポンプ22で構成されており、低真空観察
と高真空観察の両方が可能なように構成されている。
In general, the exhaust system of a conventional scanning electron microscope with a low vacuum atmosphere is provided with an intermediate chamber 8 or an objective lens 7 in order to keep the sample chamber 9 at a low vacuum during observation in a low vacuum atmosphere as shown in FIG. An orifice 13 is provided, and in order to maintain a high vacuum in the electron gun 3 and the intermediate chamber 8, the oil diffusion pump 2 is connected to the main exhaust pipe 16 from the electron gun 3 and the intermediate chamber 8.
1 and a rotary pump 22 for its back pressure. Further, it comprises a rotary pump 22 for maintaining the sample chamber 9 at a low vacuum level when the needle valve 20 for changing the pressure of the sample chamber 9 is opened, and both the low vacuum observation and the high vacuum observation are performed. It is configured as possible.

【0004】従来の低真空雰囲気型走査電子顕微鏡の問
題点は、その排気構成で電子銃室,試料室,中間室が、
主排気配管と収束レンズ電子ビーム通路を介して各々接
続されているため、低真空雰囲気での観察時に試料室の
圧力を高くしていく(真空度を悪くする)と、対物レン
ズ内のオリフィスを通ったガスが主排気配管下部16″を
通ることにより圧力低下を生じてしまう。このため、主
排気配管16の上部に接続されている電子銃室3の圧力
が高く(真空度を悪く)なるため、電子銃2の高電圧を
維持できなくなるため電子銃としての機能が果たせなく
なる。この電子銃室3の圧力制限のためにオリフィス径
を大きくできないという問題点があった。
[0004] A problem with the conventional low vacuum atmosphere type scanning electron microscope is that the electron gun chamber, sample chamber, and intermediate chamber are evacuated due to the exhaust structure.
Since the main exhaust pipe and the convergent lens are connected via the electron beam path, if the pressure in the sample chamber is increased (poor degree of vacuum) during observation in a low vacuum atmosphere, the orifice in the objective lens will be removed. The passing gas passes through the lower part 16 "of the main exhaust pipe, causing a pressure drop. Therefore, the pressure of the electron gun chamber 3 connected to the upper part of the main exhaust pipe 16 becomes high (poor degree of vacuum). As a result, the high voltage of the electron gun 2 cannot be maintained and the function as the electron gun cannot be performed, and there is a problem that the diameter of the orifice cannot be increased due to the pressure limitation of the electron gun chamber 3.

【0005】本発明は、低真空雰囲気の観察中にビーム
電流を増加させるためにオリフィス径を大きくしたい場
合やフィラメントの寿命を長くさせるために電子銃室の
圧力を低くしたい(真空度を良くしたい)場合、オリフ
ィスからの流入ガスによる主排気配管下部の圧力低下を
防止するため、装置の大きな改造をすることなく排気コ
ンダクタンスを大きくすることにある。
In the present invention, it is desired to increase the diameter of the orifice in order to increase the beam current during observation in a low vacuum atmosphere, or to reduce the pressure in the electron gun chamber in order to extend the life of the filament (to improve the degree of vacuum). In order to prevent the pressure drop below the main exhaust pipe due to the inflow gas from the orifice, the exhaust conductance is increased without major modification of the apparatus.

【0006】[0006]

【発明が解決しようとする課題】低真空雰囲気での観察
において、電子銃室を高真空に保ったまま、オリフィス
径を大きくしビーム電流を大きくすることにある。もし
くは従来と同じオリフィス径とそれを有する排気系の場
合、低真空雰囲気での観察において、より高い試料室圧
力での観察を可能にする、または電子銃部の真空度を良
くする(圧力を低くする)ことで電子銃フィラメントの
寿命を長くすることにある。
An object of the present invention is to increase the diameter of an orifice and increase the beam current while maintaining the electron gun chamber at a high vacuum in observation in a low vacuum atmosphere. Or, in the case of an exhaust system having the same orifice diameter as the conventional one and an exhaust system having the same, it is possible to perform observation at a higher sample chamber pressure in observation in a low vacuum atmosphere, or to improve the degree of vacuum of the electron gun section (lower pressure To extend the life of the electron gun filament.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するた
め、本発明はオリフィスを通ったガスによる電子銃部の
真空度への影響を小さくするために、主配管と中間配管
の共通部の排気抵抗を小さくすること、すなわち中間室
の真空排気を行う排気配管を主排気ポンプに近い所で接
続する。
In order to achieve the above object, the present invention provides a method of evacuating a common portion between a main pipe and an intermediate pipe in order to reduce the influence of gas passing through an orifice on the degree of vacuum of an electron gun. An exhaust pipe for reducing the resistance, that is, for evacuating the intermediate chamber, is connected near the main exhaust pump.

【0008】[0008]

【発明の実施の形態】以下、図面を用いて本発明の詳細
に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the drawings.

【0009】図3は一般的な低真空雰囲気型走査電子顕
微鏡の排気構成を示した概略図である。
FIG. 3 is a schematic view showing an exhaust structure of a general scanning electron microscope in a low vacuum atmosphere.

【0010】本装置は、鏡体となる電子線1を取り出す
ための電子銃2を有する電子銃室3と収束レンズ4,偏
向コイル6,対物レンズ7を有する中間室8と、試料1
2,検出器10,11などを有する試料室9そして装置
内を真空に保つための排気ポンプ21,22と排気配管
16,17から構成されている。
This apparatus comprises an electron gun chamber 3 having an electron gun 2 for taking out an electron beam 1 serving as a mirror body, an intermediate chamber 8 having a converging lens 4, a deflection coil 6, and an objective lens 7, a sample 1
2, a sample chamber 9 having detectors 10 and 11 and the like, and exhaust pumps 21 and 22 for keeping the inside of the apparatus at a vacuum and exhaust pipes 16 and 17 are constituted.

【0011】電子銃2から取り出された電子線1は、収
束レンズ4と対物レンズ7によって細い電子ビームに収
束され、走査電源23に接続された偏向コイル6によっ
て試料12上で走査される。電子線の照射によって試料
からは、二次電子,反射電子などの信号が発生する。試
料室の圧力が高い低真空(6Pa〜540Pa)の領域
では、電子の平均自由行程が250μm〜2cmときわめ
て短いため、試料を照射する電子の一部は試料近傍の残
留ガスと衝突し、これを電離して電子とイオンを生じ
る。このイオンは電子線の照射により負に帯電した試料
の電界に引き寄せられ、試料表面の電荷を中和するた
め、帯電現象が生じない。通常高真空での観察時には二
次電子を二次電子検出器10で検出するが、低真空観察
時では二次電子検出器に用いる後段加速電圧の高電圧が
印加できないため、一般には検出する信号は反射電子と
なる。この反射電子信号を検出するため、対物レンズ7
と試料12の間に、反射電子検出器11が設けられてい
る。検出された反射電子信号は、信号増幅回路24を通
してCRT25の輝度変調端子に入力され、反射電子信
号による走査像が観察できるようになっている。
The electron beam 1 taken out of the electron gun 2 is converged into a thin electron beam by a converging lens 4 and an objective lens 7, and is scanned on a sample 12 by a deflection coil 6 connected to a scanning power supply 23. Signals such as secondary electrons and reflected electrons are generated from the sample by the irradiation of the electron beam. In a low-vacuum (6 Pa to 540 Pa) region where the pressure in the sample chamber is high, since the mean free path of electrons is extremely short, 250 μm to 2 cm, some of the electrons irradiating the sample collide with the residual gas near the sample. To produce electrons and ions. The ions are attracted to the negatively charged electric field of the sample by the irradiation of the electron beam and neutralize the charge on the sample surface, so that the charging phenomenon does not occur. Normally, secondary electrons are detected by the secondary electron detector 10 during observation in a high vacuum. However, during low vacuum observation, since a high voltage of the subsequent acceleration voltage used for the secondary electron detector cannot be applied, generally, a signal to be detected is used. Becomes reflected electrons. To detect this reflected electron signal, the objective lens 7
A backscattered electron detector 11 is provided between the sample and the sample 12. The detected backscattered electron signal is input to the luminance modulation terminal of the CRT 25 through the signal amplification circuit 24 so that a scanning image based on the backscattered electron signal can be observed.

【0012】低真空雰囲気での観察中は試料室の低真空
度を維持するために電子銃室3と中間室8との間、いわ
ゆる、収束レンズ内に収束レンズ絞りを兼用している複
数個のオリフィス絞りを有する収束レンズ電子ビーム通
路5及び中間室8下方(対物レンズ部)と試料室の間に
オリフィス絞りが設けられている。これらのオリフィス
絞りは、できるだけ厚みを薄くすることで電子線の散乱
を防止し、電子線をできるだけ細く絞ることまた、排気
コンダクタンスを最適な値に設定するという両方の役割
を持っている。
During observation in a low-vacuum atmosphere, in order to maintain a low degree of vacuum in the sample chamber, a plurality of condensing lenses are used between the electron gun chamber 3 and the intermediate chamber 8, so-called a converging lens. A convergent lens having an orifice stop The orifice stop is provided between the electron beam path 5 and the lower part of the intermediate chamber 8 (objective lens section) and the sample chamber. These orifice diaphragms have both functions of preventing scattering of the electron beam by making the thickness as thin as possible, narrowing the electron beam as small as possible, and setting the exhaust conductance to an optimum value.

【0013】図4は図3の排気経路構成を流路抵抗のネ
ットワークで示したものである。その流路抵抗を用いて
各主要部の圧力を計算したものを表1に示す。
FIG. 4 shows the configuration of the exhaust path in FIG. 3 by a network of flow path resistance. Table 1 shows the calculated values of the pressures of the respective main parts using the flow path resistance.

【0014】[0014]

【表1】 [Table 1]

【0015】オリフィス径が0.2mm のとき試料室9の
圧力(真空度)(Pc′)を270Pa(2Torr)に維
持するためには図3に示した流路抵抗により各真空室の
真空度は電子銃室3(Pg′)が4.24×10-2Pa
(3.18×10-4Torr)、中間室8(Pm′)は約0.
42Pa(3.14×10-3Torr)となる。電子銃室の
圧力(真空度)としてはこれが限界であり、この排気経
路構成にて、これ以上オリフィス径を大きくすれば電子
銃室の圧力が高くなる(真空度が悪くなる)ため電子銃
の高電圧を維持できなくなるため電子銃としての機能が
果たせなくなる。電子銃室の圧力制限は、オリフィス
(R1′)を通ったガスが主排気配管下部16″(R
4′)を通るときに生じる圧力低下に伴うものである。
これを防止するには、主排気配管下部16″の排気コン
ダクタンスを大きくすること、すなわち主排気配管16
の太さを大きくすれば達成できる。しかしスペースの制
約,コストなどの面で好ましくない。
In order to maintain the pressure (vacuum degree) (Pc ') of the sample chamber 9 at 270 Pa (2 Torr) when the orifice diameter is 0.2 mm, the vacuum degree of each vacuum chamber is determined by the flow path resistance shown in FIG. Means that the electron gun chamber 3 (Pg ') is 4.24 × 10 -2 Pa
(3.18 × 10 −4 Torr), the intermediate chamber 8 (Pm ′) is about 0.1 mm.
42 Pa (3.14 × 10 −3 Torr). This is the limit for the pressure (vacuum degree) of the electron gun chamber. If the diameter of the orifice is further increased in this exhaust path configuration, the pressure in the electron gun chamber will increase (the degree of vacuum will deteriorate), so that the Since the high voltage cannot be maintained, the function as an electron gun cannot be performed. The pressure in the electron gun chamber is limited such that the gas passing through the orifice (R1 ') is not restricted to the lower part of the main exhaust pipe 16 "(R
This is accompanied by the pressure drop that occurs when passing through 4 ').
To prevent this, the exhaust conductance of the lower part 16 ″ of the main exhaust pipe is increased, that is, the main exhaust pipe 16
This can be achieved by increasing the thickness of. However, it is not preferable in terms of space restrictions and costs.

【0016】本発明は、低真空雰囲気の観察中にビーム
電流を増加させるためにオリフィス径を大きくしたい場
合や電子銃室の圧力を低くしたい(真空度を良くした
い)場合に、オリフィスからの流入ガスによる主排気配
管下部の圧力低下を防止するため、装置の大きな改造を
することなく排気コンダクタンスを大きくすることにあ
る。
According to the present invention, when it is desired to increase the diameter of the orifice or increase the pressure in the electron gun chamber (to improve the degree of vacuum) in order to increase the beam current during observation in a low vacuum atmosphere, the flow from the orifice is reduced. An object of the present invention is to increase the exhaust conductance without major modification of the apparatus in order to prevent a pressure drop below the main exhaust pipe due to gas.

【0017】図1は、本発明の一例を示す低真空雰囲気
型走査電子顕微鏡の排気構成の概略図である。また図2
は、図1の排気経路構成を流路抵抗のネットワークで示
したものである。また表2はその流路抵抗で求めた圧力
計算値である。
FIG. 1 is a schematic view showing an exhaust structure of a scanning electron microscope of a low vacuum atmosphere type showing an example of the present invention. FIG. 2
FIG. 2 shows the exhaust path configuration of FIG. 1 by a network of flow path resistances. Table 2 shows the calculated pressure values obtained from the channel resistance.

【0018】[0018]

【表2】 [Table 2]

【0019】図1の排気構成において図2の従来の排気
構成と異なるのは、中間排気配管17の主排気配管の二
重部分(内側排気配管)18及び収束レンズ電子ビーム
通路5の排気抵抗の二点である。
The exhaust configuration of FIG. 1 is different from the conventional exhaust configuration of FIG. 2 in that the exhaust resistance of the double section (inner exhaust pipe) 18 of the main exhaust pipe of the intermediate exhaust pipe 17 and the exhaust resistance of the converging lens electron beam path 5 are different. Two points.

【0020】オリフィスR1を通ったガスが主排気配管
下部R4を通るときに生じる圧力低下により電子銃室の
圧力(真空度)が制限される。そのためオリフィス径を
大きくすると流入ガス量も増加し電子銃室の圧力低下を
促す。この電子銃室の圧力低下を防止するためには主排
気配管下部16″の排気コンダクタンスを大きくする必
要がある。
The pressure (degree of vacuum) in the electron gun chamber is limited by the pressure drop that occurs when the gas passing through the orifice R1 passes through the lower portion R4 of the main exhaust pipe. Therefore, when the diameter of the orifice is increased, the amount of inflow gas also increases, and the pressure in the electron gun chamber is reduced. In order to prevent the pressure drop in the electron gun chamber, it is necessary to increase the exhaust conductance of the lower portion 16 "of the main exhaust pipe.

【0021】このため、中間室8からの中間排気配管1
7を主排気配管中16に配置した内側排気配管18に接
続し、その内側排気配管18下部を主排気配管16の最
下部(油拡散ポンプ21間口近く)で開放することで、
問題であった試料室9からの流入ガスの主排気配管中の
経路長を短くすることにした。中間室8からの排気経路
が長くなるためコンダクタンスが小さくなり中間室の圧
力が高くなるが、これは収束レンズ部すなわち収束レン
ズ電子ビーム通路5を通って電子銃室3へ流入するガス
を減らすため、収束レンズ絞り部すなわち収束レンズ電
子ビーム通路5のコンダクタンスを小さくなるように設
計すればよい。
Therefore, the intermediate exhaust pipe 1 from the intermediate chamber 8
7 is connected to the inner exhaust pipe 18 disposed in the main exhaust pipe 16, and the lower part of the inner exhaust pipe 18 is opened at the lowermost part of the main exhaust pipe 16 (near the opening of the oil diffusion pump 21),
The path length of the gas flowing from the sample chamber 9 in the main exhaust pipe, which was a problem, was shortened. The conductance becomes small and the pressure in the intermediate chamber becomes high because the exhaust path from the intermediate chamber 8 becomes long, but this reduces the gas flowing into the electron gun chamber 3 through the converging lens section, that is, the converging lens electron beam passage 5. The convergent lens aperture, that is, the conductance of the convergent lens electron beam path 5 may be designed to be small.

【0022】試料室9からの流入ガスの主排気配管中の
経路長を短くする別の方法は、図5に示したように中間
排気配管17をそのまま延長してバイパス排気配管19
として主排気配管16の最下部(油拡散ポンプ21間口
近く)にて開放してもよい。表1に示したように、図1
および図2の排気構成においてオリフィス径が0.2mmの
ときの試料室の圧力(Pc)(真空度)を270Pa(2
Torr)とした場合、図2に示した流路抵抗により各真空
室の真空度は電子銃室(Pg)が1.28×10-2Pa
(9.6×10-5Torr)、中間室(Pm)は約0.82P
a(6.17×10-3Torr)となり、電子銃室圧力(真
空度)においては、図3および図4の排気構成と比較し
て約3.3 倍良い真空度が得られる。
Another method of shortening the path length of the gas flowing from the sample chamber 9 in the main exhaust pipe is to extend the intermediate exhaust pipe 17 as shown in FIG.
Alternatively, it may be opened at the lowermost part of the main exhaust pipe 16 (near the opening of the oil diffusion pump 21). As shown in Table 1, FIG.
2 and the pressure (Pc) (degree of vacuum) of the sample chamber when the orifice diameter is 0.2 mm in the exhaust configuration of FIG.
Torr), the degree of vacuum in each vacuum chamber is 1.28 × 10 −2 Pa in the electron gun chamber (Pg) due to the flow path resistance shown in FIG.
(9.6 × 10 -5 Torr), the intermediate chamber (Pm) is about 0.82P
a (6.17 × 10 −3 Torr), and a vacuum degree about 3.3 times higher than that of the exhaust configuration shown in FIGS. 3 and 4 can be obtained at the electron gun chamber pressure (vacuum degree).

【0023】また図3および図4の排気構成において、
オリフィス径を0.2mm にしたときに試料室の圧力(真
空度)(Pc′)を270Pa(2Torr)とした場合の電
子銃室圧力(Pg′)(真空度)4.24×10-2Pa
(3.18×10-4Torr)を基準として図1および図2の
排気構成に置き換えた場合、オリフィス径を従来の約
1.8倍の0.36mmまで大きくさせることができる。プ
ローブ電流ipはオリフィス径の大きさと二乗の関係が
あることから、図3および図4の排気構成と比較して約
3.2倍のプローブ電流が流せることとなる。
In the exhaust configuration shown in FIGS. 3 and 4,
Electron gun chamber pressure (Pg ') (vacuum degree) when the orifice diameter is 0.2 mm and the pressure (vacuum degree) (Pc') in the sample chamber is 270 Pa (2 Torr), 4.24 × 10 -2 Pa
When the exhaust configuration shown in FIGS. 1 and 2 is replaced on the basis of (3.18 × 10 −4 Torr), the orifice diameter can be increased to 0.36 mm, which is about 1.8 times the conventional value. Since the probe current ip has a square relationship with the size of the orifice diameter, the probe current ip can flow about 3.2 times as much as the exhaust current shown in FIGS. 3 and 4.

【0024】[0024]

【発明の効果】本発明によれば、低真空雰囲気型走査電
子顕微鏡における低真空雰囲気状態での観察時において
オリフィス径を従来の孔径0.1mm〜0.2mm程度から孔
径0.2mm〜0.36mm程度まで大きくできるためビーム電
流を約3.2倍多くとることができる。もしくはオリフ
ィス径を従来と同じ孔径0.1mm〜0.2mm程度とした場
合は試料室圧力をより高くすることが可能であると同時
に電子銃室の真空度を高く(圧力を小さく)保つことが
できるため低真空雰囲気状態での観察時において電子銃
フィラメントの寿命を長くすることができる。
According to the present invention, the orifice diameter can be reduced from the conventional hole diameter of about 0.1 mm to 0.2 mm to the hole diameter of 0.2 mm to 0.36 mm at the time of observation in a low vacuum atmosphere using a low vacuum atmosphere scanning electron microscope. The beam current can be increased to about 3.2 times as large. Alternatively, when the orifice diameter is about 0.1 mm to 0.2 mm, which is the same as the conventional one, the pressure in the sample chamber can be increased and the degree of vacuum in the electron gun chamber can be kept high (low pressure). Therefore, the life of the electron gun filament can be prolonged during observation in a low vacuum atmosphere.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例を示す走査電子顕微鏡排気経
路構成の説明図。
FIG. 1 is an explanatory diagram of an exhaust path configuration of a scanning electron microscope showing an embodiment of the present invention.

【図2】図1の排気経路構成を流路抵抗のネットワーク
で示した回路図。
FIG. 2 is a circuit diagram showing the exhaust path configuration of FIG. 1 with a network of flow path resistances.

【図3】従来の排気系の例を示す説明図。FIG. 3 is an explanatory view showing an example of a conventional exhaust system.

【図4】図3の排気経路構成を流路抵抗のネットワーク
で示した回路図。
FIG. 4 is a circuit diagram showing the exhaust path configuration of FIG. 3 as a network of flow path resistance.

【図5】本発明の一実施例を示す排気経路構成の説明
図。
FIG. 5 is an explanatory diagram of an exhaust path configuration showing one embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1…電子線、2…電子銃、3…電子銃室、4…収束レン
ズ、5…収束レンズ電子線通路、6…偏向コイル、7…
対物レンズ、8…中間室、9…試料室、10…二次電子
検出器、11…反射電子検出器、12…試料、13…オ
リフィス絞り、14…二次電子、15…反射電子、16
…主排気配管、20…ニードルバルブ、21…油拡散ポ
ンプ、22…ロータリポンプ、23…走査電源、24…
信号増幅回路、25…CRT。
DESCRIPTION OF SYMBOLS 1 ... Electron beam, 2 ... Electron gun, 3 ... Electron gun room, 4 ... Converging lens, 5 ... Converging lens electron beam path, 6 ... Deflection coil, 7 ...
Objective lens, 8 intermediate chamber, 9 sample chamber, 10 secondary electron detector, 11 reflected electron detector, 12 sample, 13 orifice stop, 14 secondary electron, 15 reflected electron, 16
... Main exhaust pipe, 20 ... Needle valve, 21 ... Oil diffusion pump, 22 ... Rotary pump, 23 ... Scan power supply, 24 ...
Signal amplification circuit, 25 ... CRT.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 赤津 光男 茨城県ひたちなか市大字市毛1040番地 株 式会社日立サイエンスシステムズ内 (72)発明者 雪田 憲史 茨城県ひたちなか市大字市毛1040番地 株 式会社日立サイエンスシステムズ内 (72)発明者 鈴木 宏征 茨城県ひたちなか市大字市毛1040番地 株 式会社日立サイエンスシステムズ内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Mitsuo Akatsu, Inventor Hitachi Science Systems, Inc., 1040, Oji, Hitachinaka-shi, Ibaraki Prefecture (72) Inventor, Noriyuki Yukita 1040, Ma-Ichi, Hitachi, Ibaraki, Hitachi Inside Science Systems (72) Inventor Hiroyuki Suzuki 1040 Ichige Ichige, Hitachinaka City, Ibaraki Prefecture Inside Hitachi Science Systems Co., Ltd.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】対物レンズと収束レンズの間に中間室を設
け、上記中間室を排気する配管を電子銃部からの主配管
と別に設けて排気ポンプ引口の近くで接続するように構
成したことを特徴とする低真空雰囲気型走査電子顕微
鏡。
An intermediate chamber is provided between an objective lens and a converging lens, and a pipe for exhausting the intermediate chamber is provided separately from a main pipe from an electron gun section, and is connected near an exhaust pump inlet. A scanning electron microscope of a low vacuum atmosphere type characterized by the above.
【請求項2】上記中間配管を上記主配管の中を通る二重
構造とした請求項1に記載の低真空雰囲気型走査電子顕
微鏡。
2. The scanning electron microscope according to claim 1, wherein said intermediate pipe has a double structure passing through said main pipe.
JP8191772A 1996-07-22 1996-07-22 Low vacuum atmosphere scanning electron microscope Pending JPH1040850A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8191772A JPH1040850A (en) 1996-07-22 1996-07-22 Low vacuum atmosphere scanning electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8191772A JPH1040850A (en) 1996-07-22 1996-07-22 Low vacuum atmosphere scanning electron microscope

Publications (1)

Publication Number Publication Date
JPH1040850A true JPH1040850A (en) 1998-02-13

Family

ID=16280277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8191772A Pending JPH1040850A (en) 1996-07-22 1996-07-22 Low vacuum atmosphere scanning electron microscope

Country Status (1)

Country Link
JP (1) JPH1040850A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006147430A (en) * 2004-11-22 2006-06-08 Hokkaido Univ electronic microscope
JP2006313651A (en) * 2005-05-06 2006-11-16 Shimadzu Corp Corpuscular ray microscope and component shift structure for vacuum analytical instrument
JP2016177926A (en) * 2015-03-19 2016-10-06 日本電子株式会社 Electron microscope and control method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006147430A (en) * 2004-11-22 2006-06-08 Hokkaido Univ electronic microscope
JP2006313651A (en) * 2005-05-06 2006-11-16 Shimadzu Corp Corpuscular ray microscope and component shift structure for vacuum analytical instrument
JP2016177926A (en) * 2015-03-19 2016-10-06 日本電子株式会社 Electron microscope and control method

Similar Documents

Publication Publication Date Title
EP0462554B1 (en) Charged particle beam apparatus
US5828064A (en) Field emission environmental scanning electron microscope
US6809322B2 (en) Environmental scanning electron microscope
JPH06139985A (en) Scanning electron microscope
AU2016309960B2 (en) Wide field atmospheric scanning electron microscope
JPH09171791A (en) Scanning electron microscope
CZ20033170A3 (en) Reconfigurable scanning electron microscope
JPS5942748A (en) Electron gun
US7365323B2 (en) Environmental scanning electron microcope
JP2796305B2 (en) Field emission electron gun
JPH09320504A (en) Low vacuum scanning electron microscope
JP3714810B2 (en) Electron beam equipment
JP2002075264A (en) Low vacuum scanning electron microscope
JPH08138603A (en) Low vacuum atmosphere scanning electron microscope
US6407388B1 (en) Corpuscular beam device
JPH10134751A (en) Environmentally controlled scanning electron microscope
JPH11242941A (en) Scanning electron microscope
JPH06333525A (en) Charged particle beam irradiation device
JPH06338280A (en) Environmental control type scanning electron microscope
JP3494152B2 (en) Scanning electron microscope
JP3014986B2 (en) Scanning electron microscope
JP3494208B2 (en) Scanning electron microscope
TWI807604B (en) Charged particle beam apparatus, scanning electron microscope, and method of operating a charged particle beam apparatus
JPH0689686A (en) Scanning electron microscope
JP2004247321A (en) Scanning electron microscope